CN110398522A - Integrated gas sensing unit based on graphene and preparation method thereof - Google Patents
Integrated gas sensing unit based on graphene and preparation method thereof Download PDFInfo
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 85
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 30
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 23
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 23
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 23
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 21
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 23
- 230000035945 sensitivity Effects 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000002923 metal particle Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 9
- 239000007789 gas Substances 0.000 description 55
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 18
- 239000010408 film Substances 0.000 description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 8
- 238000004590 computer program Methods 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 6
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 206010070834 Sensitisation Diseases 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000008313 sensitization Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000002120 nanofilm Substances 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 230000007096 poisonous effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 206010017740 Gas poisoning Diseases 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- -1 graphite alkenes Chemical class 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 210000004379 membrane Anatomy 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 210000004400 mucous membrane Anatomy 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000505 pernicious effect Effects 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000013404 process transfer Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention discloses a kind of integrated gas sensing unit and preparation method thereof based on graphene, comprising: production Si+SiO2Substrate；In the Si+SiO2Ti/Pt electrode is sputtered on substrate；Graphene is shifted to the Si+SiO2On substrate；NH is made on the graphene3Sensitive portion, H2Sensitive portion and NO2Sensitive portion；And with acetone soak, and remove photoresist.Whereby, the preparation method of the integrated gas sensing unit of the invention based on graphene, is integrated with three kinds of gas sensing units, and at low cost, simple process.
Description
Technical field
The present invention relates to gas sensitization sensor technical fields, especially with regard to a kind of integrated gas based on graphene
Quick sensing unit and preparation method thereof.
Background technique
Gas detection plays increasingly important role in daily life.The production in the fields such as chemical industry, environment can not
The meeting avoided generates a large amount of exhaust gas.This kind of exhaust gas can not only generate greatly damage to natural environment, but also to human health
Various irreversible harm can be generated.Ammonia, nitrogen dioxide etc. are to common are poisonous gas in life, and human body sucks meeting pair on a small quantity
Mucosal tissue generates intense stimulus, and excessive sucking will cause to be poisoned or even threat to life.In addition, hydrogen, acetone etc. are inflammable and explosive
The leakage of gas can become the hidden danger of life-threatening and property safety.Therefore, real-time monitoring is carried out to the gas in surrounding air
It is very necessary.Gas sensitization sensor can convert electric signal for the concentration of gases all kinds of in ambient enviroment, will be unable to
The gas concentration information intuitively analyzed is converted into the electrical information that can intuitively analyze.It can be to ambient enviroment using gas sensor
In harmful gas concentration carry out real-time monitoring, can effectively contain the generation of the events such as poisonous gas poisoning, explosion.
Graphene is the novel nano-material of rising in recent years, can be applied to field of gas detection.Graphene nano film
Extremely sensitive to the variation of surrounding environmental gases concentration, the sensing unit as gas sensor has high sensitivity, response time
The advantages such as fast, meanwhile, film quality is the central factor for influencing gas sensitive device performance.
Has certain progress in terms of graphene gas sensor, Haifeng Qiu et al. is existed using CVD method
It grown graphene film in glass substrate, using Ti/Cu as metal interconnection, form Ohmic contact, recycle ozone to stone
Black alkene film is aoxidized, and graphene oxide layer is obtained.Experiments have shown that change in resistance of the graphene oxide sensitive thin film to ammonia
Rate reaches 19%, responds turnaround time at 15 minutes or so, performance was positively retained at 60% in 40 days, to other gases such as acetone
It is less sensitive, have the advantages that selectivity is high.Min Gyun Chung et al. using PMMA as medium to CVD graphene
Wet process transfer has been carried out, while having carried out palladium metal doping using thermal evaporation process on the surface of graphene, has been obtained to 1000ppm
The hydrogen of concentration has the sensing unit of 30% change in resistance, responds turnaround time at 10 minutes or so.Sen Liu et al.
Redox graphene is modified using zinc oxide, so that graphene film has high selectivity to nitrogen dioxide
Sensitivity, change in resistance is more than 25% under room temperature, can produce step response to the nitrogen dioxide of 2.5ppm concentration, but is responded when replying
Between it is longer, up to 100 minutes.Other than above-mentioned target susceptibility gas, Jiayu Dai et al. is sensitive using graphene film
Carbon monoxide, Miao Zhou etal. have probed into the graphene of adsorption metallic particles to gases such as carbon dioxide and oxygen
The sensitive mechanism of molecule.
Although researcher has explored kinds of schemes in terms of graphene air-sensitive, this kind of device is often only capable of to one
The particular kind of gas of kind is detected, this is not able to satisfy integrated for device, multi-functional in real gas detection process
The requirement of change.In practical applications, a variety of pernicious gases can be monitored by generally requiring one piece of air-sensitive chip, and current research is also
It is unable to satisfy this kind of demand.
The information disclosed in the background technology section is intended only to increase the understanding to general background of the invention, without answering
When being considered as recognizing or imply that the information constitutes the prior art already known to those of ordinary skill in the art in any form.
Summary of the invention
The purpose of the present invention is to provide a kind of integrated gas sensing unit and preparation method thereof based on graphene,
It is integrated with three kinds of gas sensing units, and at low cost, simple process.
To achieve the above object, the integrated gas sensing unit and its preparation that the present invention provides a kind of based on graphene
Method, comprising: production Si+SiO2Substrate；In the Si+SiO2Ti/Pt electrode is sputtered on substrate；Graphene is shifted to the Si+
SiO2On substrate；NH is made on the graphene3Sensitive portion, H2Sensitive portion and NO2Sensitive portion；And with acetone soak, and go
Except photoresist.
In a preferred embodiment, Si+SiO2Substrate by 400 micron thickness p-type doping silicon wafer and 300 nanometer thickness
The dielectric layer of degree forms.
In a preferred embodiment, dielectric layer is to utilize the deposited shape of plasma enhanced chemical vapor deposition technique
At silica constitute.
In a preferred embodiment, in Si+SiO2It includes: in dielectric layer surface elder generation that Ti/Pt electrode is sputtered on substrate
The Ti metal electrode with a thickness of 10 nanometers is sputtered, then continuing deposition thickness by adhesion layer of 10 nanometers of Ti metal electrode is 50
The Pt metal electrode of nanometer.
In a preferred embodiment, NH3Sensitive portion is sensitivity NH3Graphene oxide film.
In a preferred embodiment, H2Sensitive portion is sensitivity H2The graphene layer doped with porpezite metal particles.
In a preferred embodiment, NO2Sensitive portion is sensitivity NO2The graphene oxide doped with ZnO particle it is thin
Film.
Compared with prior art, the integrated gas sensing unit and its preparation side according to the present invention based on graphene
Method is integrated with three kinds of gas sensing units, and at low cost, simple process.
Detailed description of the invention
Fig. 1 is the structural representation of the integrated gas sensing unit based on graphene according to an embodiment of the present invention
Figure.
Fig. 2 is that the working principle of the integrated gas sensing unit based on graphene according to an embodiment of the present invention is shown
It is intended to.
Fig. 3 is the preparation method of the integrated gas sensing unit based on graphene according to an embodiment of the present invention
Preparation flow figure.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in detail, it is to be understood that guarantor of the invention
Shield range is not limited by the specific implementation.
Unless otherwise explicitly stated, otherwise in entire disclosure and claims, term " includes " or its change
Changing such as "comprising" or " including " etc. will be understood to comprise stated element or component, and not exclude other members
Part or other component parts.
As shown in Figure 1 to Figure 3, Fig. 1 is the integrated gas sensing based on graphene according to an embodiment of the present invention
The structural schematic diagram of unit；Fig. 2 is the integrated gas sensing unit based on graphene according to an embodiment of the present invention
Operation principle schematic diagram；Fig. 3 is the system of the integrated gas sensing unit based on graphene according to an embodiment of the present invention
The preparation flow figure of Preparation Method.
A kind of integrated gas sensing unit and its preparation side based on graphene according to the preferred embodiment of the present invention
Method, comprising: production Si+SiO2Substrate；In the Si+SiO2Ti/Pt electrode is sputtered on substrate；Graphene is shifted to the Si+
SiO2On substrate；NH is made on the graphene3Sensitive portion, H2Sensitive portion and NO2Sensitive portion；And with acetone soak, and go
Except photoresist.
In a preferred embodiment, Si+SiO2Substrate by 400 micron thickness p-type doping silicon wafer and 300 nanometer thickness
The dielectric layer of degree forms；Dielectric layer is the silica structure using the deposited formation of plasma enhanced chemical vapor deposition technique
At.
In a preferred embodiment, in Si+SiO2It includes: in dielectric layer surface elder generation that Ti/Pt electrode is sputtered on substrate
The Ti metal electrode with a thickness of 10 nanometers is sputtered, then continuing deposition thickness by adhesion layer of 10 nanometers of Ti metal electrode is 50
The Pt metal electrode of nanometer.
In a preferred embodiment, NH3Sensitive portion is sensitivity NH3Graphene oxide film；H2Sensitive portion is sensitivity
H2The graphene layer doped with porpezite metal particles；NO2Sensitive portion is sensitivity NO2The graphene oxide doped with ZnO particle it is thin
Film.
In practical applications, the integrated gas sensing unit and preparation method thereof of the invention based on graphene, graphite
The integrated gas sensing unit of alkene is mainly made of substrate, the big part of metal interconnection and three, sensitivity portion, and wherein substrate includes
Silicon substrate and silicon oxide dielectric layer mainly as support construction, and realize the electric isolation of sensing unit and substrate；Metal interconnection
Ti/Pt electrode by riding over sensitive portion both ends is constituted, Ti be used as upper layer Pt and silicon oxide dielectric layer soakage layer, increase electrode with
The binding force of substrate prevents from falling off in subsequent rinse, immersion or etch step；Non-sensitive part is NH3 sensitivity portion, H2 is quick
Sense portion and NO2 sensitivity portion.NH3 sensitivity portion is mainly made of graphene oxide film, and H2 sensitivity portion is by doped with porpezite metal particles
Graphene layer constitute, NO2 sensitivity portion is made of the graphene oxide film doped with ZnO particle.Graphene gas sensing list
Meta structure is made of three parts, and first part includes sensitive structure, including three structures, and first structure is sensitivity NH3's
Graphene oxide film, second structure are sensitivity H2The graphene layer doped with porpezite metal particles, third structure be it is quick
Feel NO2The graphene oxide film doped with ZnO particle.Second major part is substrate, and substrate is situated between by silicon substrate and silica
Matter layer is constituted, and main function is the electric isolation for realizing sensing unit and substrate.Part III is Ti/Pt electrode, main function
It is to draw electrical signal.
The production process of integrated gas sensing unit based on graphene of the invention and preparation method thereof is as follows: first making
Make completion Si+SiO2Substrate, operating below all is to operate on substrate, sputters Ti/Pt electrode, retransfers graphene, then make
Then graphene oxide completes the graphene layer production doped with porpezite metal particles, then completes the oxidation doped with ZnO particle
Graphene film production, finally uses acetone soak, removes photoresist, completes entire gas sensing cellular construction.
The substrate and electrode manufacturing process of the embodiment of the present invention are as follows:
Graphene gas sensing unit substrate is by the p-type doping silicon wafer of 400 micron thickness and the dielectric layer of 300 nano thickness
Composition, dielectric layer are that the silica formed using plasma enhanced chemical vapor deposition technique (PECVD) deposition is constituted.
The electrode of graphene gas sensing unit is made in silica dioxide medium by the physical deposition method of magnetron sputtering
The surface of layer.Since the bonding force between Pt metal and silica dioxide medium layer is weaker, in the process of subsequent technique rinsing, immersion
In, Pt metal is easy to separate because of external force with silicon dioxide substrates, so as to cause falling off for electrode, it is therefore desirable in Pt metal and two
One layer of Ti metal is added between silicon oxide substrate, is used as adhesion layer, Ti metal and silicon dioxide substrates binding force are big, are not easy to take off
It falls, therefore is the optimal selection for making adhesion layer.The Ti metal with a thickness of 10nm is sputtered first in silica dioxide medium layer surface,
Then continuing the Pt metal electrode that deposition thickness is 50 nanometers by adhesion layer of 10 nanometers of Ti metal, the size of PAD is 250 ×
250 microns, it is based on welding technology, connects PAD and outer enclosure electrode by 30 microns of diameter of spun golds, to draw air-sensitive biography
Feel the output signal of unit.
The integrated gas sensing unit of graphene mainly makees the absorption of gas molecule in air using each sensitivity portion film
With sensitive NH3、H2And NO2.When sensitive membrane adsorption has gas molecule, the outer-shell electron in different gas molecules will be led
Sensitization film generates different types of chanza.Graphene has the band structure of taper, and conduction band and valence band are in dirac point
Connect, there is no forbidden band presence and fermi level is located at conduction band and the tie point of valence band, once extraneous gas molecule passes through suction
It is attached to act on the equilibrium state for breaking graphene energy band, then fermi level can be made to conduction band offset or to valence band offset, to conduction band
Offset is referred to as n-type doping, is referred to as p-type doping to valence band offset, the offset of fermi level will be such that graphene conductivity occurs
Variation.In addition, the gas molecule of absorption will also open the energy band of graphene, make to generate energy gap between conduction band and valence band, to make
The resistance value of whole graphene film changes.Since gas with various influences difference to graphene bring, passes through comparison and inhale
The detection to object gas can be realized in the resistance value of graphene after the resistance value and absorption of attached preceding graphene.
The present invention provides the integrated gas sensings based on graphene that can detect ammonia, hydrogen and nitrogen dioxide simultaneously
Unit and preparation method thereof mentions for novel and multifunctional, integrated, intelligent micro-nano chip of the manufacture based on graphene nano film
A feasible Research Thinking has been supplied, has provided Research foundation for the practical exploitation of graphite alkenes device.
In short, the integrated gas sensing unit and preparation method thereof of the invention based on graphene, is integrated with three kinds of gas
Quick sensing unit using silicon wafer as substrate, at low cost, simple process, and is based on MEMS technology for ammonia sensitive blocks, hydrogen
Sensitive blocks and nitrogen dioxide sensitive blocks are integrated on chip piece.
It should be understood by those skilled in the art that, embodiments herein can provide as method, system or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the application
Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the application, which can be used in one or more,
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces
The form of product.
The application is referring to method, the process of equipment (system) and computer program product according to the embodiment of the present application
Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions
The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs
Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real
The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.
These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates,
Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or
The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting
Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or
The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one
The step of function of being specified in a box or multiple boxes.
The aforementioned description to specific exemplary embodiment of the invention is in order to illustrate and illustration purpose.These descriptions
It is not wishing to limit the invention to disclosed precise forms, and it will be apparent that according to the above instruction, can much be changed
And variation.The purpose of selecting and describing the exemplary embodiment is that explaining specific principle of the invention and its actually answering
With so that those skilled in the art can be realized and utilize a variety of different exemplary implementation schemes of the invention and
Various chooses and changes.The scope of the present invention is intended to be limited by claims and its equivalents.
Claims (10)
1. a kind of preparation method of the integrated gas sensing unit based on graphene characterized by comprising
Make Si+SiO2Substrate；
In the Si+SiO2Ti/Pt electrode is sputtered on substrate；
Graphene is shifted to the Si+SiO2On substrate；
NH is made on the graphene3Sensitive portion, H2Sensitive portion and NO2Sensitive portion；And
With acetone soak, and remove photoresist.
2. the preparation method of the integrated gas sensing unit based on graphene as described in claim 1, which is characterized in that institute
State Si+SiO2Substrate is made of the p-type doping silicon wafer of 400 micron thickness and the dielectric layer of 300 nano thickness.
3. the preparation method of the integrated gas sensing unit based on graphene as claimed in claim 2, which is characterized in that institute
Stating dielectric layer is constituted using the silica of the deposited formation of plasma enhanced chemical vapor deposition technique.
4. the preparation method of the integrated gas sensing unit based on graphene as claimed in claim 2, which is characterized in that In
The Si+SiO2It includes: first to sputter the Ti with a thickness of 10 nanometers in the dielectric layer surface that the Ti/Pt electrode is sputtered on substrate
Then metal electrode continues the Pt metal electricity that deposition thickness is 50 nanometers by adhesion layer of 10 nanometers of the Ti metal electrode
Pole.
5. the preparation method of the integrated gas sensing unit based on graphene as described in claim 1, which is characterized in that institute
State NH3Sensitive portion is sensitivity NH3Graphene oxide film, the H2Sensitive portion is sensitivity H2Doped with porpezite metal particles
Graphene layer, and the NO2Sensitive portion is sensitivity NO2The graphene oxide film doped with ZnO particle.
6. a kind of integrated gas sensing unit based on graphene characterized by comprising
Si+SiO2Substrate；
Ti/Pt electrode is sputtered in the Si+SiO2On substrate；
Graphene is set to the Si+SiO2On substrate；
NH3Sensitive portion is set on the graphene；
H2Sensitive portion is set on the graphene；And
NO2Sensitive portion is set on the graphene.
7. the integrated gas sensing unit based on graphene as claimed in claim 6, which is characterized in that the Si+SiO2Lining
Bottom is made of the p-type doping silicon wafer of 400 micron thickness and the dielectric layer of 300 nano thickness.
8. the integrated gas sensing unit based on graphene as claimed in claim 7, which is characterized in that the dielectric layer is
It is constituted using the silica of the deposited formation of plasma enhanced chemical vapor deposition technique.
9. the integrated gas sensing unit based on graphene as claimed in claim 7, which is characterized in that the Ti/Pt electricity
The Ti metal electrode of pole with a thickness of 10 nanometers, and the Pt metal electrode of the Ti/Pt electrode with a thickness of 50 nanometers.
10. the integrated gas sensing unit based on graphene as claimed in claim 6, which is characterized in that the NH3It is sensitive
Portion is sensitivity NH3Graphene oxide film, the H2Sensitive portion is sensitivity H2The graphene layer doped with porpezite metal particles,
And the NO2Sensitive portion is sensitivity NO2The graphene oxide film doped with ZnO particle.
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Citations (9)
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