CN110352507A - Preparation method and application of perovskite thin film - Google Patents
Preparation method and application of perovskite thin film Download PDFInfo
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- CN110352507A CN110352507A CN201880000047.4A CN201880000047A CN110352507A CN 110352507 A CN110352507 A CN 110352507A CN 201880000047 A CN201880000047 A CN 201880000047A CN 110352507 A CN110352507 A CN 110352507A
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- perovskite
- thin film
- perovskite thin
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- 238000002360 preparation method Methods 0.000 title claims abstract 3
- 239000010409 thin film Substances 0.000 title claims 18
- 239000002243 precursor Substances 0.000 claims abstract 9
- 239000000758 substrate Substances 0.000 claims abstract 9
- 239000011248 coating agent Substances 0.000 claims abstract 8
- 238000000576 coating method Methods 0.000 claims abstract 8
- 230000005855 radiation Effects 0.000 claims abstract 5
- 238000000034 method Methods 0.000 claims abstract 4
- 238000000137 annealing Methods 0.000 claims abstract 3
- 238000004519 manufacturing process Methods 0.000 claims 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 229910052792 caesium Inorganic materials 0.000 claims 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 230000005525 hole transport Effects 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052740 iodine Inorganic materials 0.000 claims 1
- 239000011630 iodine Substances 0.000 claims 1
- -1 methyl diamine Chemical class 0.000 claims 1
- 230000005693 optoelectronics Effects 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
一种钙钛矿薄膜的制备方法，至少包括以下步骤：步骤S01.在空气条件下，对衬底、钙钛矿前躯体溶液进行预热处理；步骤S02.在空气和热辐射条件下，将预热后的所述钙钛矿前躯体溶液滴于所述衬底表面，随后在涂覆设备上进行涂覆处理；步骤S03.将步骤S02涂覆处理得到衬底进行退火处理，获得钙钛矿薄膜。该方法采用热辐射的方式，实现了钙钛矿薄膜的空气条件下制备，并且获得的钙钛矿薄膜其光电转换效率达到16.44％，能达到与在手套箱、氮气氛围下制备的钙钛矿薄膜光电效率一致的技术效果。
A method for preparing a perovskite film comprises at least the following steps: step S01. preheating a substrate and a perovskite precursor solution under air conditions; step S02. dripping the preheated perovskite precursor solution onto the surface of the substrate under air and thermal radiation conditions, and then coating the solution on a coating device; step S03. annealing the substrate obtained by the coating treatment in step S02 to obtain a perovskite film. The method adopts thermal radiation to achieve the preparation of a perovskite film under air conditions, and the photoelectric conversion efficiency of the obtained perovskite film reaches 16.44%, which can achieve the same technical effect as the photoelectric efficiency of a perovskite film prepared in a glove box and a nitrogen atmosphere.
Description
PCT国内申请，说明书已公开。PCT domestic application, the description has been published.
Claims (13)
- A preparation method of a perovskite thin film is characterized by comprising the following steps: at least comprises the following steps:s01, preheating a substrate and a perovskite precursor solution under an air condition;s02, under the conditions of air and heat radiation, dripping the preheated perovskite precursor solution on the surface of the substrate, and then performing coating treatment on coating equipment;and S03, annealing the substrate obtained by the coating treatment in the step S02 to obtain the perovskite thin film.
- The method for producing a perovskite thin film as claimed in claim 1, wherein: the heat radiation condition is a heat radiation light source.
- The method for producing a perovskite thin film as claimed in any one of claims 1 to 2, wherein: the preheating temperature of the perovskite precursor solution is 70-85 ℃.
- The method for producing a perovskite thin film as claimed in any one of claims 1 to 2, wherein: the concentration of the perovskite precursor solution is 0.8-1.5 mmol/mL.
- The method for producing a perovskite thin film as claimed in claim 1, wherein: the coating mode is spin coating or blade coating.
- The method for producing a perovskite thin film as claimed in any one of claims 1 to 2, wherein: the structural general formula of the perovskite precursor in the perovskite precursor solution is ABX3Wherein A is any one of methylamine, methyl diamine, cesium and indium, B is any one of lead and tin, and X is any one of chlorine, bromine and iodine; the solvent of the perovskite precursor solution is dimethylformamide or dimethyl sulfoxide.
- The method for producing a perovskite thin film as claimed in claim 1, wherein: the relative humidity of the air is less than or equal to 50 percent.
- The method for producing a perovskite thin film as claimed in claim 1, wherein: the preheating temperature of the substrate is 90-110 ℃.
- The method for producing a perovskite thin film as claimed in claim 1, wherein: the temperature of the annealing treatment is 90-100 ℃.
- An optoelectronic device comprising a perovskite thin film, characterized in that: the perovskite thin film is obtained by the method for preparing a perovskite thin film according to any one of claims 1 to 9.
- A perovskite solar cell comprising a light absorbing layer, characterized in that: the light absorbing layer is a perovskite thin film obtained by the method for preparing a perovskite thin film according to any one of claims 1 to 9.
- The perovskite solar cell of claim 11, wherein: the perovskite solar cell has a forward structure or a reverse structure.
- The perovskite solar cell of claim 11 or 12, wherein: the perovskite solar cell is structurally characterized in that the perovskite solar cell is composed of a metal oxide conductive substrate, an electron transmission layer, a perovskite thin film layer, a hole transmission layer and a metal conductive silver layer; or a metal oxide conductive substrate/hole transport layer/perovskite thin film layer/electron transport layer/metal conductive aluminum layer.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/074585 WO2019148326A1 (en) | 2018-01-30 | 2018-01-30 | Method for preparing perovskite thin film and application thereof |
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| Publication Number | Publication Date |
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| CN110352507A true CN110352507A (en) | 2019-10-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201880000047.4A Pending CN110352507A (en) | 2018-01-30 | 2018-01-30 | Preparation method and application of perovskite thin film |
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| CN (1) | CN110352507A (en) |
| WO (1) | WO2019148326A1 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111048668A (en) * | 2019-12-23 | 2020-04-21 | 暨南大学 | Method for preparing perovskite film based on solution method, perovskite film and application |
| CN111235635A (en) * | 2020-03-02 | 2020-06-05 | 广西大学 | Growth method of spin-coating single crystal on wide-bandgap semiconductor substrate |
| CN111584717A (en) * | 2020-05-15 | 2020-08-25 | 浙江大学 | A method for improving the efficiency of organic-inorganic hybrid perovskite solar cells with external field-assisted photothermal combination |
| CN111640868A (en) * | 2020-05-13 | 2020-09-08 | 上海大学 | Preparation method of perovskite thin film photoelectric device based on electronic irradiation modification |
| CN112510157A (en) * | 2020-11-12 | 2021-03-16 | 深圳市惠能材料科技研发中心(有限合伙) | Method for preparing perovskite solar cell in large area through all air |
| CN112748218A (en) * | 2020-12-20 | 2021-05-04 | 浙江大学 | On-line real-time monitoring system for preparing perovskite semiconductor photoelectric device |
| CN112993156A (en) * | 2021-02-04 | 2021-06-18 | 大连理工大学 | Flexible gate with high switching frequency and preparation method thereof |
| CN113193128A (en) * | 2021-05-24 | 2021-07-30 | 电子科技大学 | Perovskite solar cell with interface modification layer and preparation method thereof |
| CN114597314A (en) * | 2022-01-25 | 2022-06-07 | 成都钛钙新能源科技有限公司 | A kind of preparation method of full-spectrum photostable high-efficiency perovskite solar cells |
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| CN112490364B (en) * | 2020-11-26 | 2024-09-03 | 苏州科技大学 | Perovskite battery based on controllable ferric oxide nano particles and preparation method thereof |
| CN113192821A (en) * | 2021-04-20 | 2021-07-30 | 电子科技大学 | A kind of preparation method and application of all-inorganic CsPbI3 perovskite thin film |
| CN113611802B (en) * | 2021-08-30 | 2023-10-31 | 南京工业大学 | Perovskite solar cell modified by small organic molecules, preparation method and application |
| CN114242902B (en) * | 2021-11-29 | 2024-08-06 | 西北工业大学深圳研究院 | Method for improving air stability of trans-type all-inorganic perovskite solar cell based on ionic liquid |
| CN114530510A (en) * | 2022-02-16 | 2022-05-24 | 山东省科学院能源研究所 | All-inorganic perovskite solar cell and preparation method thereof |
| CN114628549B (en) * | 2022-03-31 | 2024-12-27 | 北京航空航天大学 | A method for preparing CsPbX3 perovskite thin film on a large scale |
| CN115084391A (en) * | 2022-07-27 | 2022-09-20 | 暨南大学 | Perovskite solar cell with hole interface gradient structure, perovskite precursor solution, perovskite composite thin film layer and preparation method |
| CN115331863B (en) * | 2022-07-28 | 2024-08-20 | 西北核技术研究所 | Flexible perovskite alpha-type nuclear battery and preparation method thereof |
| CN115558137A (en) * | 2022-09-30 | 2023-01-03 | 华中科技大学 | Preparation method of self-repairing flexible perovskite thin film based on visible light induction |
| CN115594413B (en) * | 2022-10-21 | 2023-12-29 | 榆林学院 | Preparation method of sodium-doped two-dimensional perovskite film |
| CN115921194A (en) * | 2022-12-02 | 2023-04-07 | 西安电子科技大学 | Equipment and method for preparing nano-scale microstructure perovskite film by roller thermal coating |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048668A (en) * | 2019-12-23 | 2020-04-21 | 暨南大学 | Method for preparing perovskite film based on solution method, perovskite film and application |
| CN111048668B (en) * | 2019-12-23 | 2022-09-20 | 麦耀华 | Method for preparing perovskite film based on solution method, perovskite film and application |
| CN111235635A (en) * | 2020-03-02 | 2020-06-05 | 广西大学 | Growth method of spin-coating single crystal on wide-bandgap semiconductor substrate |
| CN111640868B (en) * | 2020-05-13 | 2022-07-22 | 上海大学 | Preparation method of perovskite thin film optoelectronic devices based on electron irradiation modification |
| CN111640868A (en) * | 2020-05-13 | 2020-09-08 | 上海大学 | Preparation method of perovskite thin film photoelectric device based on electronic irradiation modification |
| CN111584717A (en) * | 2020-05-15 | 2020-08-25 | 浙江大学 | A method for improving the efficiency of organic-inorganic hybrid perovskite solar cells with external field-assisted photothermal combination |
| CN111584717B (en) * | 2020-05-15 | 2022-05-10 | 浙江大学 | Method for improving efficiency of hybrid perovskite solar cell by aid of photo-thermal combined external field |
| CN112510157A (en) * | 2020-11-12 | 2021-03-16 | 深圳市惠能材料科技研发中心(有限合伙) | Method for preparing perovskite solar cell in large area through all air |
| CN112748218A (en) * | 2020-12-20 | 2021-05-04 | 浙江大学 | On-line real-time monitoring system for preparing perovskite semiconductor photoelectric device |
| CN112993156A (en) * | 2021-02-04 | 2021-06-18 | 大连理工大学 | Flexible gate with high switching frequency and preparation method thereof |
| CN112993156B (en) * | 2021-02-04 | 2024-03-29 | 大连理工大学 | Flexible gate with high switching times and preparation method thereof |
| CN113193128A (en) * | 2021-05-24 | 2021-07-30 | 电子科技大学 | Perovskite solar cell with interface modification layer and preparation method thereof |
| CN114597314A (en) * | 2022-01-25 | 2022-06-07 | 成都钛钙新能源科技有限公司 | A kind of preparation method of full-spectrum photostable high-efficiency perovskite solar cells |
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