CN110335970A - Flexible display substrates and its manufacturing method, flexible display apparatus - Google Patents
Flexible display substrates and its manufacturing method, flexible display apparatus Download PDFInfo
- Publication number
- CN110335970A CN110335970A CN201910639614.7A CN201910639614A CN110335970A CN 110335970 A CN110335970 A CN 110335970A CN 201910639614 A CN201910639614 A CN 201910639614A CN 110335970 A CN110335970 A CN 110335970A
- Authority
- CN
- China
- Prior art keywords
- layer
- substrates
- heat
- flexible
- thermal insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 315
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000009413 insulation Methods 0.000 claims abstract description 114
- 238000000034 method Methods 0.000 claims abstract description 82
- 230000008569 process Effects 0.000 claims abstract description 32
- 239000010410 layer Substances 0.000 claims description 576
- 239000000463 material Substances 0.000 claims description 120
- 229920002120 photoresistant polymer Polymers 0.000 claims description 76
- 238000001259 photo etching Methods 0.000 claims description 60
- 239000004020 conductor Substances 0.000 claims description 26
- 238000002161 passivation Methods 0.000 claims description 18
- 238000004020 luminiscence type Methods 0.000 claims description 17
- 239000011229 interlayer Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 14
- 238000011161 development Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 40
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 239000000377 silicon dioxide Substances 0.000 description 19
- 229910052681 coesite Inorganic materials 0.000 description 16
- 229910052906 cristobalite Inorganic materials 0.000 description 16
- 229910052682 stishovite Inorganic materials 0.000 description 16
- 229910052905 tridymite Inorganic materials 0.000 description 16
- 238000000576 coating method Methods 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910021389 graphene Inorganic materials 0.000 description 9
- 238000002207 thermal evaporation Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- -1 for example Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000003292 glue Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 239000000956 alloy Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 239000005439 thermosphere Substances 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 238000006068 polycondensation reaction Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000004695 Polyether sulfone Substances 0.000 description 3
- 239000004697 Polyetherimide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920006393 polyether sulfone Polymers 0.000 description 3
- 229920001601 polyetherimide Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 229910002012 Aerosil® Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005815 base catalysis Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920001230 polyarylate Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/87—Arrangements for heating or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The application discloses a kind of flexible display substrates and its manufacturing method, flexible display apparatus, belongs to field of display technology.This method comprises: forming flexible substrates on the rigid substrate；Thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with flexible substrates；Display structure is formed on the rigid substrates for being formed with thermal insulation layer and heat-conducting layer；Rigid substrates are removed, flexible display substrates are obtained.The application can to avoid laser lift-off rigid substrates during the heat that generates burn the display structures of flexible display substrates, reduce the influence of the processes of removing rigid substrates to the quality of flexible display substrates.The application is used for the manufacture of flexible display substrates.
Description
Technical field
This application involves field of display technology, in particular to a kind of flexible display substrates and its manufacturing method, Flexible Displays
Device.
Background technique
With the development of semiconductor display device and the growing consumption demand of consumer, flexible display substrates are
Start largely to be introduced to the market, is widely used in bent screen mobile phone, the bent screen Flexible Displays such as mobile unit and wearable device
Device.
Currently, usually manufacturing flexible substrates and the display structure in flexible substrates on the rigid substrate, adopt later
Flexible display substrates are obtained with laser lift-off removing rigid substrates.
But during removing rigid substrates, the high temperature heat that laser generates can burn the displays of flexible display substrates
Structure influences the quality of flexible display substrates.
Apply for content
The application provides a kind of flexible display substrates and its manufacturing method, flexible display apparatus, helps avoid laser stripping
The heat generated during from rigid substrates is burnt the display structures of flexible display substrates.The technical solution is as follows:
In a first aspect, providing a kind of manufacturing method of flexible display substrates, which comprises
Flexible substrates are formed on the rigid substrate；
Thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with the flexible substrates；
Display structure is formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer；
The rigid substrates are removed, the flexible display substrates are obtained.
Optionally, the thermal insulation layer and the heat-conducting layer same layer are distributed.
Optionally, the thermal insulation layer have hollowed out area, the heat-conducting layer be located in the hollowed out area and with it is described every
Thermosphere contact.
Optionally, the thickness of the thermal insulation layer is equal with the thickness of the heat-conducting layer.
Optionally, the material of the thermal insulation layer is insulating materials, and the material of the heat-conducting layer is conductive material.
Optionally, the material of the thermal insulation layer includes aerosil, and the material of the heat-conducting layer includes graphene.
Optionally, thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with the flexible substrates, comprising: logical
It crosses a patterning processes and forms the thermal insulation layer and the heat-conducting layer on the rigid substrates for being formed with the flexible substrates.
Optionally, described to pass through a patterning processes and form institute on the rigid substrates for being formed with the flexible substrates
State thermal insulation layer and the heat-conducting layer, comprising:
Heat-insulated material layers are formed on the rigid substrates for being formed with the flexible substrates；
The first photoetching offset plate figure is formed on the rigid substrates for being formed with the heat-insulated material layers；
To not performed etching by the region that first photoetching offset plate figure covers in the heat-insulated material layers, make described heat-insulated
Material layers form hollowed out area, obtain the thermal insulation layer；
Heat-conducting layer, the heat-conducting are formed on the rigid substrates for being formed with first photoetching offset plate figure
Layer part is located in the hollowed out area；
First photoetching offset plate figure and the heat-conducting layer on first photoetching offset plate figure are removed, is obtained
To the heat-conducting layer.
Optionally, the first photoetching offset plate figure is formed on the rigid substrates for being formed with the heat-insulated material layers, comprising:
The first photoresist layer is formed on the rigid substrates for being formed with the heat-insulated material layers；
First photoresist layer is exposed using the first mask plate, and to first photoresist layer after exposure
Develop, obtains first photoetching offset plate figure；
The display structure includes: switch unit, and the switch unit includes grid, described to be formed with the thermal insulation layer
Structure is shown with being formed on the rigid substrates of the heat-conducting layer, comprising:
Conductive material layer and are sequentially formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer
Two photoresist layers, the polarity of second photoresist layer are opposite with the polarity of first photoresist layer；
Second photoresist layer is exposed using first mask plate, and to second photoetching after exposure
Glue-line develops, and obtains the second photoetching offset plate figure；
To not performed etching by the region that second photoetching offset plate figure covers on the conductive material layer, make the conduction
Material layers form the grid, and the grid is contacted with heat-conducting layer superposition, and the grid is in the flexible substrates
Orthographic projection is overlapped with orthographic projection of the heat-conducting layer in the flexible substrates；
Remove second photoetching offset plate figure.
Optionally, the display structure includes luminescence unit and the switch unit,
It is described that display structure is formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer, also wrap
It includes: sequentially forming gate insulation layer, active layer, interlayer dielectric layer and source-drain electrode on the rigid substrates for being formed with the grid
Layer, obtains the switch unit；
The method also includes: sequentially form on the rigid substrates for being formed with the switch unit passivation layer, flat
Smooth layer and pixel defining layer；
It is described that display structure is formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer, also wrap
It includes: sequentially forming anode, luminescent layer and cathode far from the side of the rigid substrates in the flatness layer, obtain the luminous list
Member, the luminescence unit are located in the pixel openings of pixel defining layer restriction；
It is formed before thermal insulation layer and heat-conducting layer on the rigid substrates for be formed with the flexible substrates, the method is also
It include: to form buffer layer on the rigid substrates for being formed with the flexible substrates；
It is described that thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with the flexible substrates, comprising: in shape
At forming the thermal insulation layer and the heat-conducting layer on the rigid substrates for having the buffer layer.
Second aspect, provides a kind of flexible display substrates, and the flexible display substrates include:
Flexible substrates；
Thermal insulation layer and heat-conducting layer in the flexible substrates；
The display structure of side positioned at the thermal insulation layer and the heat-conducting layer far from the flexible substrates.
Optionally, the thermal insulation layer and the heat-conducting layer same layer are distributed.
Optionally, the thermal insulation layer have hollowed out area, the heat-conducting layer be located in the hollowed out area and with it is described every
Thermosphere contact.
Optionally, the thickness of the thermal insulation layer is equal with the thickness of the heat-conducting layer.
Optionally, the material of the thermal insulation layer is insulating materials, and the material of the heat-conducting layer is conductive material.
Optionally, the material of the thermal insulation layer includes aerosil, and the material of the heat-conducting layer includes graphene.
Optionally, the display structure includes luminescence unit and switch unit, and the switch unit includes along far from described
Grid, gate insulation layer, active layer, interlayer dielectric layer and the source-drain electrode layer that the direction of flexible substrates is sequentially distributed, the luminous list
Member includes anode, luminescent layer and the cathode being sequentially distributed along the direction far from the flexible substrates；
The flexible display substrates further include: the buffer layer between the flexible substrates and the thermal insulation layer, and,
Passivation layer, flatness layer and the pixel defining layer of side positioned at the switch unit far from the flexible substrates, the luminous list
Member is located in the pixel openings that the pixel defining layer limits.
The third aspect provides a kind of flexible display apparatus, including any flexible display substrates of second aspect.
Technical solution provided by the present application has the benefit that
Flexible display substrates provided by the embodiments of the present application and its manufacturing method, flexible display apparatus, due to flexible substrates
Setting on the rigid substrate, and has thermal insulation layer and heat-conducting layer between flexible substrates and display structure, is using laser lift-off work
During skill removes rigid substrates, thermal insulation layer can completely cut off the heat of laser generation, the heat that heat-conducting layer can generate laser
Amount is exported from display base plate, therefore the heat that can be generated to avoid laser burns and shows structure, reduces the mistake of removing rigid substrates
Influence of the journey to the quality of flexible display substrates.
It should be understood that the above general description and the following detailed description are merely exemplary, this can not be limited
Application.
Detailed description of the invention
In order to more clearly explain the technical solutions in the embodiments of the present application, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the drawings in the following description are only some examples of the present application, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of method flow diagram of the manufacturing method of flexible display substrates provided by the embodiments of the present application；
Fig. 2 is the method flow diagram of the manufacturing method of another flexible display substrates provided by the embodiments of the present application；
Fig. 3 is the schematic diagram after a kind of flexible substrates of formation on the rigid substrate provided by the embodiments of the present application；
Fig. 4 be it is provided by the embodiments of the present application it is a kind of on the rigid substrates for be formed with flexible base board formed buffer layer after
Schematic diagram；
Fig. 5 is provided by the embodiments of the present application a kind of thermal insulation layer and thermally conductive to be formed on the rigid substrates for be formed with buffer layer
The method flow diagram of layer；
Fig. 6 be it is provided by the embodiments of the present application it is a kind of heat-insulated material layers are formed on the rigid substrates for be formed with buffer layer after
Schematic diagram；
Fig. 7 is provided by the embodiments of the present application a kind of the first photoetching to be formed on the rigid substrates for being formed with heat-insulated material layers
Schematic diagram after glue-line；
Fig. 8 is a kind of schematic diagram being exposed to the first photoresist layer provided by the embodiments of the present application；
Fig. 9 is the schematic diagram after a kind of the first photoresist layer to after exposure provided by the embodiments of the present application develops；
Figure 10 is provided by the embodiments of the present application a kind of to the area not covered by the first photoetching offset plate figure in heat-insulated material layers
Domain perform etching after schematic diagram；
Figure 11 is that a kind of formed on the rigid substrates for being formed with the first photoetching offset plate figure provided by the embodiments of the present application is led
Schematic diagram after hot material layers；
Figure 12 be a kind of first photoetching offset plate figure of removal provided by the embodiments of the present application and be located at the first photoetching offset plate figure
On heat-conducting layer after schematic diagram；
Figure 13 is that a kind of formed on the rigid substrates for being formed with thermal insulation layer and heat-conducting layer provided by the embodiments of the present application opens
Close the method flow diagram of unit；
Figure 14 is a kind of successively shape on the rigid substrates for being formed with thermal insulation layer and heat-conducting layer provided by the embodiments of the present application
At the schematic diagram after conductive material layer and the second photoresist layer；
Figure 15 is a kind of schematic diagram being exposed to the second photoresist layer provided by the embodiments of the present application；
Figure 16 is the schematic diagram after a kind of the second photoresist layer to after exposure provided by the embodiments of the present application develops；
Figure 17 is the area not covered by the second photoetching offset plate figure on a kind of pair of conductive material floor provided by the embodiments of the present application
Domain perform etching after schematic diagram；
Figure 18 is the schematic diagram after a kind of second photoetching offset plate figure of removal provided by the embodiments of the present application；
Figure 19 be it is provided by the embodiments of the present application it is a kind of sequentially formed on the rigid substrates for be formed with grid gate insulation layer,
Schematic diagram after active layer, interlayer dielectric layer and source-drain electrode layer；
Figure 20 is provided by the embodiments of the present application a kind of passivation to be sequentially formed on the rigid substrates for be formed with switch unit
Schematic diagram after layer and flatness layer；
Figure 21 be it is provided by the embodiments of the present application it is a kind of on the rigid substrates for be formed with flatness layer formed luminescence unit and
Schematic diagram after pixel defining layer；
Figure 22 is a kind of schematic diagram using laser lift-off removing rigid substrates provided by the embodiments of the present application；
Figure 23 is a kind of structural schematic diagram of flexible display substrates provided by the embodiments of the present application.
The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the application
Example, and together with specification it is used to explain the principle of the application.
Specific embodiment
In order to keep the purposes, technical schemes and advantages of the application clearer, below in conjunction with attached drawing to the application make into
It is described in detail to one step, it is clear that described embodiments are only a part of embodiments of the present application, rather than whole implementation
Example.Based on the embodiment in the application, obtained by those of ordinary skill in the art without making creative efforts
All other embodiment, shall fall in the protection scope of this application.
With the development of display technology, with Organic Light Emitting Diode (English: Organic Light-Emitting
Diode；Abbreviation OLED) display device representative flexible display apparatus using more and more extensive.The master of flexible display apparatus
Wanting display unit is flexible display substrates, and flexible display substrates are using polyimides (English: Polyimide；Referred to as: PI) formed
Flexible substrates as underlay substrate, instead of the glass substrate in rigid display base plate, using thin-film package (English: Thin
Film Encapsulation；Referred to as: TFE) structure replaces the package substrate in rigid display base plate, and flexible display substrates have
Frivolous, flexible and folding characteristic can satisfy user to the growth requirement of display device.
In the use process of flexible display apparatus, it is general that many users have found that the screen surrounding of flexible display apparatus will appear
Green phenomenon, especially in the lower background of the brightness such as screen display grey, this phenomenon is particularly evident.OLED expert thinks
The reason of this phenomenon occur is to remove rigid substrates using laser lift-off during manufacturing flexible display substrates
When, the high temperature heat that laser generates has been burnt the green light emitting layers of flexible display substrates.
Flexible display substrates provided by the embodiments of the present application and its manufacturing method, flexible display apparatus, due to flexible substrates
Setting on the rigid substrate, and has thermal insulation layer and heat-conducting layer between flexible substrates and display structure, is using laser lift-off work
During skill removes rigid substrates, thermal insulation layer can completely cut off the heat of laser generation, the heat that heat-conducting layer can generate laser
Amount is exported from display base plate, therefore the heat that can be generated to avoid laser burns and shows structure, reduces the mistake of removing rigid substrates
Influence of the journey to the quality of flexible display substrates.
Referring to FIG. 1, it illustrates a kind of methods of the manufacturing method of flexible display substrates provided by the embodiments of the present application
Flow chart, referring to Fig. 1, this method be may comprise steps of:
In a step 101, flexible substrates are formed on the rigid substrate.
In a step 102, thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with flexible substrates.
In step 103, display structure is formed on the rigid substrates for being formed with thermal insulation layer and heat-conducting layer.
At step 104, rigid substrates are removed, flexible display substrates are obtained.
In conclusion the manufacturing method of flexible display substrates provided by the embodiments of the present application, since flexible substrates setting exists
On rigid substrates, and there is thermal insulation layer and heat-conducting layer between flexible substrates and display structure, is removed using laser lift-off
During rigid substrates, thermal insulation layer can completely cut off the heat of laser generation, and the heat that heat-conducting layer can generate laser is from soft
Property display base plate export, therefore the heat that can be generated to avoid laser be burnt and be shown structure, and the process of removing rigid substrates is reduced
Influence to the quality of flexible display substrates.
Referring to FIG. 2, it illustrates the sides of the manufacturing method of another flexible display substrates provided by the embodiments of the present application
Method flow chart, referring to fig. 2, this method may include following steps:
In step 201, flexible substrates are formed on the rigid substrate.
Wherein, the material of rigid substrates can be leaded light and transparent non-metallic material with certain robustness, for example, just
Property substrate material can be one of glass, quartz or transparent resin or a variety of combinations.Flexible substrates can be single layer
Structure or multilayered structure, for example, flexible substrates can be the organic layer of single layer, alternatively, flexible substrates can be organic layer and nothing
The multilayered structure that machine layer is alternately superimposed.Wherein, the material of organic layer can be organic transparent material, for example, organic layer
Material can be PI, polyethylene naphthalate (English: Polyethylene naphthalate two formic acid
glycol ester；Referred to as: PEN), polyethylene terephthalate (English: Polyethylene terephthalate；Letter
Claim: PET), polyarylate (English: Polyarylate；Referred to as: PAR), polycarbonate (English: Polycarbonate；Referred to as:
PC), polyether sulfone (English: Polyethersulfone；Referred to as: PES) or polyetherimide is (English: Polyetherimide；Letter
Claim: PEI) one or more of combination.
Referring to FIG. 3, it illustrates one kind provided by the embodiments of the present application to form flexible substrates 101 on rigid substrates 00
Schematic diagram afterwards, the Fig. 3 are illustrated so that flexible substrates 101 are single layer structure as an example.As shown in figure 3, flexible substrates 101 cover
Rigid substrates 00.Illustratively, by taking the material of flexible substrates 101 is PI as an example, it is molten one layer of PI can be coated on rigid substrates 00
Then liquid is dried to obtain flexible substrates 101 to the PI solution of coating.
In step 202, buffer layer is formed on the rigid substrates for be formed with flexible substrates.
Wherein, buffer layer can protect the display structure being subsequently formed, and helps avoid extraneous steam and invades and harasses display structure
In film layer, the material of the buffer layer can be one of SiOx (Chinese: silica) or SiNx (Chinese: silicon nitride) or two
The combination of person.
Referring to FIG. 4, it illustrates provided by the embodiments of the present application a kind of in the rigid substrates for being formed with flexible base board 102
The schematic diagram after buffer layer 102 is formed on 00, buffer layer 102 covers flexible base board 102.Illustratively, it using SiOx as material, uses
Any one of techniques such as sputtering, thermal evaporation or deposition form buffering on the rigid substrates 00 for be formed with flexible base board 102
Layer 102.
In step 203, thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with buffer layer.
Wherein, thermal insulation layer can be distributed with heat-conducting layer with same layer, and the thickness of thermal insulation layer can be equal with the thickness of heat-conducting layer.
For example, thermal insulation layer has hollowed out area, heat-conducting layer is located in the hollowed out area and contacts with thermal insulation layer so that thermal insulation layer with lead
Thermosphere can be distributed with same layer.
In the embodiment of the present application, can be formed on the rigid substrates for be formed with buffer layer by a patterning processes every
Thermosphere and heat-conducting layer.It is being formed with referring to FIG. 5, it illustrates one kind provided by the embodiments of the present application by a patterning processes
The method flow diagram of thermal insulation layer and heat-conducting layer is formed on the rigid substrates of buffer layer, referring to Fig. 5, this method may include following several
Sub-steps:
In sub-step 2031, heat-insulated material layers are formed on the rigid substrates for be formed with buffer layer.
Wherein, the material of the heat-insulated material layers can be the insulating materials with good heat-proof quality, implement in the application
In example, the material of the heat-insulated material layers may include SiO2(Chinese: silica) aeroge.SiO2Aeroge refraction coefficient is situated between
It is a kind of effective with characteristics such as lower thermal conductivity, low refraction coefficient, high light transmittance and solid-states between liquid and gas
Heat preserving and insulating material, SiO2The heat insulating effect and SiO of aeroge2The extremely low bulk density of aeroge itself and inside are big
The cavity of amount is related, by the study found that making SiO with means appropriate2Aeroge has nanoporous network structure, can make
SiO2Aeroge have extremely low solid-state and gaseous state heat-conductive characteristic, at normal temperature thermal conductivity can down to 0.013W/mK (watt
Special every meter of every Kelvin), it is preferable thermal insulation material in solid material.Currently, SiO2Aeroge is widely used in aerospace vehicle,
Ground, underground, the water surface and the underwater vehicles, building facility, and, work, agricultural equipment etc., usually using the method for coating
SiO is coated on substrate2Aeroge, to utilize SiO2Aeroge makes insulation film.
Referring to FIG. 6, it illustrates provided by the embodiments of the present application a kind of in the rigid substrates 00 for being formed with buffer layer 102
The upper schematic diagram formed after heat-insulated material layers A, heat-insulated material layers A cover buffer layer 102, and the thickness of the heat-insulated material layers A can be with
For 50~500nm (nanometer).Illustratively, buffer layer can be formed with using one of coating processes such as spin coating or spraying
A layer thickness is coated on 102 rigid substrates 00 in the SiO of 50~500nm2Aeroge, and to the SiO of coating2Aeroge carries out
It is dried to obtain heat-insulated material layers A.
It should be readily apparent to one skilled in the art that before executing the sub-step 2031, it can be with previously prepared SiO2Aeroge.
In the embodiment of the present application, SiO can be prepared using one-step method or two step method2Aeroge.SiO is prepared using two step method2Aeroge
Refer to, is to prepare raw material with silicon monomer, successively carries out acidic catalyst and base catalysis obtains SiO2Aeroge, wherein in acidity
Under catalytic condition, the silicon oxygen bond that slow polycondensation reaction forms polymer form occurs for silicon monomer, obtains weak crosslinking, low-density network
Gel, under the conditions of base catalysis, the weak crosslinking, low-density network gel in silicic acid monomer hydrolysis after rapid polycondensation, it is raw
SiO is obtained at relatively compact colloidal particles2Aeroge, wherein the size of the colloidal particles depends on preparation condition.SiO2Gas
The structure of gel depends primarily on the reaction rate of each component hydrolysis and polycondensation.SiO is prepared using two step method2Aeroge can obtain
There must be the SiO of high porosity, low bulk density2Aeroge, after measured, the SiO prepared using two step method2The porosity it is reachable
It is more than 97% (percent), SiO2The line density of aeroge is 4nm, and bore hole size is 1~30nm, and uses one-step method preparation
SiO2The line density of aeroge is 10~50nm, and bore hole size is 1~100nm.SiO is prepared using two step method2The optics of aeroge
Transmitance is higher.
Wherein, SiO is prepared using two step method2The process of aeroge may include: firstly, with ethyl orthosilicate (English:
Tetraethyl Orthosilicate；It is referred to as: TEOS) presoma, is equipped with suitable ethyl alcohol and hydrochloric acid mixes at room temperature
And be sufficiently stirred 30 minutes or more, mixed solution is stood 100 minutes in the environment of 60 DEG C (degree Celsius), it is hydrolyzed
And suitable ammonia spirit is instilled the mixed solution later by polycondensation reaction, and after being stirred at room temperature 30 minutes, sealing is simultaneously
It moves in dry environment (relative humidity < 60%), aging 1 to 5 day, completes SiO2The preparation of aeroge.It should be noted that
Preparation SiO provided by the embodiments of the present application2The method of aeroge is only a kind of example, prepares SiO2The method of aeroge is not only
It is defined in two step method, the embodiment of the present application does not limit this.
In sub-step 2032, the first photoresist layer is formed on the rigid substrates for being formed with heat-insulated material layers.
Wherein, the first photoresist layer can be negativity photoresist layer.
Referring to FIG. 7, it illustrates provided by the embodiments of the present application a kind of in the rigid substrates for being formed with heat-insulated material layers A
Schematic diagram after forming the first photoresist layer G on 00, the first photoresist layer G cover heat-insulated material layers A.Illustratively, Ke Yi
It is formed on the rigid substrates 00 of heat-insulated material layers A and coats one layer of negative photoresist as the first photoresist layer G.
In sub-step 2033, the first photoresist layer is exposed using the first mask plate, and to first after exposure
Photoresist layer develops, and obtains the first photoetching offset plate figure.
Referring to FIG. 8, it illustrates a kind of first mask plate X of use provided by the embodiments of the present application to the first photoresist layer
The schematic diagram that G is exposed, first mask plate X can have transmission region (not marking in Fig. 8) and lightproof area (in Fig. 8
Do not mark), as shown in figure 8, the first mask plate X can be arranged in the first side of the photoresist layer G far from rigid substrates 00, make
First photoresist layer G is located between rigid substrates 00 and the first mask plate X, and the first mask plate X and is formed with the first photoresist
The rigid substrates 00 of layer G align, and then irradiate the first mask plate X, the light for launching light source using light source (being not shown in Fig. 8)
Line exposes to the first photoresist layer G through the transmission region of the first mask plate X, is irradiated on first photoresist layer G by light
Region is photosensitive, and the region that do not irradiated by light is not photosensitive.
After being exposed to the first photoresist layer G, it can develop to the first photoresist layer G after exposure.Illustratively,
Referring to FIG. 9, showing after developing it illustrates a kind of the first photoresist layer G to after exposure provided by the embodiments of the present application
It is intended to, in conjunction with Fig. 8 and Fig. 9, since the first photoresist layer G is negativity photoresist layer, to the first photoresist layer G after exposure
After being developed, part not photosensitive on the first photoresist layer G can be removed, protects part photosensitive on the first photoresist layer G
It stays, obtains the first photoetching offset plate figure G1, which has hollowed out area, corresponding first photoetching in the hollowed out area
Not photosensitive region on glue-line G.
In sub-step 2034, to not performed etching by the region that the first photoetching offset plate figure covers in heat-insulated material layers, make
Heat-insulated material layers form hollowed out area, obtain thermal insulation layer.
Referring to FIG. 10, it illustrates it is provided by the embodiments of the present application it is a kind of on heat-insulated material A layer not by the first photoetching
Schematic diagram after the region of glue pattern G1 covering performs etching illustratively can use dry etch process, with the first photoresist
Figure G1 be etch-resistant layer, on heat-insulated material layers A not by the first photoetching offset plate figure G1 cover region perform etching, removal every
The region not covered by the first photoetching offset plate figure G1 on hot material layers A, so that hollowed out area A1 is formed on heat-insulated material layers A,
So that heat-insulated material layers A forms thermal insulation layer 103.
In sub-step 2035, heat-conducting layer is formed on the rigid substrates for being formed with the first photoetching offset plate figure, it is thermally conductive
Material layers part is located in the hollowed out area of heat-insulated material layers.
Wherein, the thickness of the heat-conducting layer and the thickness of thermal insulation layer are identical, so that the thickness of finally formed heat-conducting layer
Degree is identical as the thickness of the thermal insulation layer, guarantees the planarization of flexible display substrates.The material of heat-conducting layer can be for good
The insulating materials or conductive material of good heating conduction, in the embodiment of the present application, the material of the heat-conducting layer may include stone
Black alkene.Graphene has excellent performance, for example, graphene has the theoretical specific surface area of superelevation, excellent thermal conductivity, high-strength
Amount, high-modulus, high electron mobility and high conductivity, the theoretical specific surface area of graphene is up to 2630m2g-1It is (square metre every
Gram), thermal coefficient is up to 5000W/mK (every meter of watt every Kelvin), and strong to measure up to 130GPa (Ji Pa), modulus is reachable
1060GPa (Ji Pa), electron mobility is up to 15000cm2/ (Vs) (centimeters per volt is per second), conductivity is reachable
7200S/cm (Siemens per centimeter).
Figure 11 is please referred to, a kind of is being formed with the rigid of the first photoetching offset plate figure G1 it illustrates provided by the embodiments of the present application
Property substrate 00 on formed heat-conducting layer B after schematic diagram, referring to Figure 11 and combine Figure 10, the heat-conducting layer part B covering
First photoetching offset plate figure G1, partially positioned at thermal insulation layer 103 hollowed out area A1 in, and the thickness of heat-conducting layer B with it is heat-insulated
Layer 103 thickness it is identical, heat-conducting layer B with a thickness of 50~500nm, to guarantee the planarization of flexible display substrates.
Illustratively, using graphene as material, using any one of techniques such as sputtering, thermal evaporation, spin coating or spraying in shape
At heat-conducting layer B is formed on the rigid substrates 00 for having the first photoetching offset plate figure G1, heat-conducting layer part B is located at the first photoetching
On glue pattern G1, partially it is located in the hollowed out area A1 on thermal insulation layer 103.
In sub-step 2036, the first photoetching offset plate figure and the heat-conducting on the first photoetching offset plate figure are removed
Layer, obtains heat-conducting layer.
Figure 12 is please referred to, it illustrates a kind of first photoetching offset plate figure G1 of removal provided by the embodiments of the present application and is located at
The schematic diagram after heat-conducting layer B on first photoetching offset plate figure G1 illustratively can remove the first photoetching by cineration technics
Glue pattern G1, while removing the first photoetching offset plate figure G1, the heat-conducting layer B on the first photoetching offset plate figure G1 is also gone
It removes, the heat-conducting layer B in the hollowed out area A1 on thermal insulation layer 103 retains to form heat-conducting layer 104.
It should be noted that the embodiment of the present application is to be formed and be led on the rigid substrates for being formed with the first photoetching offset plate figure
After hot material layers, removes the first photoetching offset plate figure and obtain heat-conducting layer after the heat-conducting layer on the first photoetching offset plate figure
For be illustrated, it should be readily apparent to one skilled in the art that slot coated technique engraving in heat-insulated material layers can also be used
Graphene is coated in empty region, to obtain heat-conducting layer, the embodiment of the present application is not limited this.
In step 204, switch unit is formed on the rigid substrates for being formed with thermal insulation layer and heat-conducting layer.
Optionally, switch unit can be thin film transistor (TFT) (English: Thin Film Transistor；Referred to as: TFT),
TFT generally includes grid, gate insulation layer, active layer, interlayer dielectric layer, source electrode and drain electrode.
Figure 13 is please referred to, it illustrates provided by the embodiments of the present application a kind of in the rigidity for being formed with thermal insulation layer and heat-conducting layer
The method flow diagram of switch unit is formed on substrate, referring to Figure 13, this method may include following sub-step:
In sub-step 2041, sequentially formed on the rigid substrates for being formed with thermal insulation layer and heat-conducting layer conductive material layer and
Second photoresist layer, the polarity of the second photoresist layer are opposite with the polarity of the first photoresist layer.
Wherein, the material of conductive material layer can be the conductive materials such as metal material or alloy material, for example, conductive material
The material of layer is metal Al (Chinese: aluminium), one of Ni metal (Chinese: copper) or metal Mo (Chinese: molybdenum), alternatively, conductive
The material of material layers is a variety of alloy materials in metal Al, Ni metal or metal Mo.Second photoresist layer can be positivity
Photoresist layer.
Figure 14 is please referred to, it illustrates one kind provided by the embodiments of the present application to be formed with thermal insulation layer 103 and heat-conducting layer 104
Rigid substrates 00 on sequentially form the schematic diagram after conductive material layer Y and the second photoresist layer J, conductive material layer Y covering every
Thermosphere 103 and heat-conducting layer 104, the second photoresist layer J cover conductive material layer Y.
Illustratively, it is possible, firstly, to be formed with thermal insulation layer 103 using any one of techniques such as sputtering or thermal evaporation and leading
Metal Al material layers are formed on the rigid substrates 00 of thermosphere 104 as conductive material layer Y, then, are being formed with conductive material layer Y
Rigid substrates 00 on coating one layer of positive photoresist as the second photoresist layer J.
In sub-step 2042, the second photoresist layer is exposed using the first mask plate, and to second after exposure
Photoresist layer develops, and obtains the second photoetching offset plate figure.
Figure 15 is please referred to, a kind of is shown what the second photoresist layer J was exposed it illustrates provided by the embodiments of the present application
It is intended to, the realization process of the sub-step 2033 of the embodiment of the present application can be referred to the process that the second photoresist layer J is exposed,
Details are not described herein for the embodiment of the present application.
Figure 16 is please referred to, it illustrates a kind of the second photoresist layer J progress to after exposure provided by the embodiments of the present application
Schematic diagram after development, due to the second photoresist layer J be positive photoresist layer, to the second photoresist layer J after exposure into
After row development, part photosensitive on the second photoresist layer J can be removed, retains part not photosensitive on the second photoresist layer J
Obtain the second photoetching offset plate figure J1.It is readily appreciated that, in the embodiment of the present application, the second photoetching offset plate figure J1 and the first photoresist figure
Shape G1 is complementary.
In sub-step 2043, to not performed etching by the region that the second photoetching offset plate figure covers on conductive material layer, make
Conductive material layer forms grid.
Please refer to Figure 17, it illustrates on a kind of pair of conductive material layer Y provided by the embodiments of the present application not by the second photoetching
Glue pattern J1 covering region perform etching after schematic diagram.Referring to Figure 17, wet-etching technology can be used, with the second photoetching
Glue pattern J1 is etch-resistant layer, performs etching available grid 1051, grid 1051 and heat-conducting layer 104 to conductive material layer Y
Superposition contact, and grid 1051 on rigid substrates 00 orthographic projection and orthographic projection weight of the heat-conducting layer 104 on rigid substrates 00
It closes.
In the embodiment of the present application, grid 1051 is contacted with the superposition of heat-conducting layer 104, therefore grid 1051 and heat-conducting layer 104
Parallel connection, since heat-conducting layer 104 is using having the graphene of good electric conductivity to be made, heat-conducting layer 104 can reduce grid
1051 impedance.Further, since thermal insulation layer 104 and grid 1051 are manufactured by same mask plate, therefore it can be to avoid more
The use of a mask plate reduces the manufacturing cost of flexible display substrates.
In sub-step 2044, the second photoetching offset plate figure is removed.
Figure 18 is please referred to, it illustrates the signals after a kind of second photoetching offset plate figure J1 of removal provided by the embodiments of the present application
Figure.Illustratively, the second photoetching offset plate figure J1 being covered on grid 1051 can be removed by cineration technics.
In sub-step 2045, gate insulation layer, active layer, interlayer are sequentially formed on the rigid substrates for be formed with grid and is situated between
Matter layer and source-drain electrode layer, source-drain electrode layer include source electrode and drain electrode, obtain switch unit.
Wherein, the material of gate insulation layer can be transparent insulation material, for example, the material of gate insulation layer can be SiO2、
SiOx、SiNx、Al2O3The combination of one or more of (Chinese: aluminium oxide) or SiOxNx (Chinese: silicon oxynitride), it is active
The material of layer can be one in oxide (English: Oxide), a-Si (Chinese: amorphous silicon) or p-Si (Chinese: polysilicon)
Kind, for example, the material of active layer can be indium gallium zinc oxide (English: Indium Gallium Zinc Oxide；Referred to as:
IGZO) or indium tin zinc oxide is (English: Indium Tin Zinc Oxide；Referred to as: ITZO), the material of interlayer dielectric layer can
Think SiO2、SiOx、SiNx、Al2O3Or the combination of one or more of SiOxNx, the material of both source electrode and drain electrodes
All can be the material of both metal material or alloy material, such as source electrode and drain electrode be metal Al, Ni metal or metal
Any one of metal materials such as Mo or the material of both source electrode and drain electrodes are in metal Al, Ni metal and metal Mo
A variety of alloy materials.
Figure 19 is please referred to, it illustrates provided by the embodiments of the present application a kind of in the rigid substrates 00 for being formed with grid 1051
On sequentially form gate insulation layer 1052, active layer 1053, interlayer dielectric layer 1054 and source-drain electrode layer (not marking in Figure 19) after
Schematic diagram, grid 1051, gate insulation layer 1052, active layer 1053, interlayer dielectric layer 1054 and source-drain electrode layer are along far from rigid base
The direction of plate 00 be sequentially distributed constitute switch unit 105, source-drain electrode layer include source electrode 1055 and drain electrode 1056, source electrode 1055 and leakage
Pole 1056 does not contact, and source electrode 1055 and drain electrode 1056 are contacted with active layer 1053 respectively, as shown in figure 19, interlayer dielectric layer
1054 there is multiple via holes, source electrode 1055 and drain electrode 1056 to pass through via hole and active layer 1053 different on interlayer dielectric layer 1054
Contact.
It illustratively, is SiO with the material of gate insulation layer 10522, the material of active layer 1053 is IGZO, interlayer dielectric layer
1054 material is SiOx, for the material of source electrode 1055 and drain electrode 1056 is metal Al, is then being formed with grid 1051
Gate insulation layer 1052, active layer 1053, interlayer dielectric layer 1054 and source-drain electrode layer are sequentially formed on rigid substrates 00 may include:
Firstly, with SiO2For material, by any one of techniques such as deposition, coating or sputtering in the rigid base for being formed with grid 1051
Gate insulation layer 1052 is formed on plate 00；Then, gate insulation is being formed with by any one of techniques such as deposition, coating or sputtering
IGZO material layers are formed on the rigid substrates 00 of layer 1052, and IGZO material layers have been handled by a patterning processes
Active layer 1053；Then, using SiOx as material, active layer is being formed by any one of techniques such as deposition, coating or sputtering
Interlayer dielectric layer 1054 is formed on 1053 rigid substrates 00；Finally, being existed by any one of techniques such as sputtering or thermal evaporation
Formation metal Al material layers on the rigid substrates 00 of interlayer dielectric layer 1054 are formed with, by a patterning processes to metal Al material
Matter layer is handled to obtain source electrode 1055 and drain electrode 1056.
In step 205, passivation layer and flatness layer are sequentially formed on the rigid substrates for be formed with switch unit.
Optionally, the material of passivation layer can be the combination of one or more of SiOx, SiNx or SiOxNx, flat
The material of layer can be the transparent organic materials such as organic resin, alternatively, the material of flatness layer can be SiOx, SiNx, Al2O3Or
The transparent inorganic materials such as SiOxNx.
Figure 20 is please referred to, it illustrates provided by the embodiments of the present application a kind of in the rigid base for being formed with switch unit 105
Schematic diagram after sequentially forming passivation layer 106 and flatness layer 107 on plate 00, passivation layer 106 can protect source electrode 1055 and drain electrode
1056, via hole is respectively provided on passivation layer 106 and flatness layer 107, and the via hole of the via hole of passivation layer 106 and flatness layer 107 connects
It is logical.
It illustratively, is SiOx with the material of passivation layer 106, for the material of flatness layer 107 is organic resin, firstly, can
To form one on the rigid substrates 00 for being formed with switch unit 105 by any one of techniques such as deposition, coating or sputtering
Layer SiOx material layers, are handled SiOx material layers by a patterning processes, to form via hole in SiOx material layers, from
And passivation layer 106 is obtained, then, passivation layer is being formed with by any one of techniques such as magnetron sputtering, thermal evaporation or deposition
One layer of organic resin is deposited on 106 rigid substrates 00 and obtains resin material layer, and resin material layer is successively exposed and is shown
Shadow, to form via hole on resin material layer, to obtain flatness layer 107.
In step 206, luminescence unit and pixel defining layer are formed on the rigid substrates for be formed with flatness layer, are shone single
Member is located in the pixel openings that pixel defining layer limits.
Wherein, flexible display substrates can be oled display substrate, and luminescence unit can be OLED light emitting unit, shine single
Member may include anode, luminescent layer and cathode, and luminescent layer may include organic luminous layer, in addition, luminescent layer can also include sky
One layer or more in cave implanted layer, hole transmission layer, hole blocking layer, electronic barrier layer, electron transfer layer or electron injecting layer
Layer.
In the embodiment of the present application, flexible display substrates can be top emitting display base plate or bottom emitting display base plate, when
When flexible display substrates are bottom emitting display base plate, anode is transparent electrode, and cathode is reflecting electrode, when flexible display substrates are
When top emitting display base plate, anode is reflecting electrode, and cathode is transparent electrode.Wherein, the material of transparent electrode can be transparent
Conductive material, for example, the material of the transparent electrode can be tin indium oxide (English: Indium tin oxide；Referred to as: ITO),
Indium zinc oxide (English: Indium zinc oxide；Referred to as: IZO) or Al-Doped ZnO is (English: aluminum-doped
zinc oxide；One of referred to as: ZnO:Al) etc. or a variety of combinations, the material of reflecting electrode can for metal material or
Alloy material, for example, the material of reflecting electrode can be one of metal Al, Ni metal or metal Mo or a variety of alloy materials
Material.Wherein, the material of pixel defining layer can for polysiloxanes, fluorine is hydrocarbon, one in polyamide polymers or epoxy resin
Kind or a variety of combinations, the material of organic luminous layer can be luminous organic material.
Figure 21 is please referred to, it illustrates provided by the embodiments of the present application a kind of in the rigid substrates for being formed with flatness layer 107
The schematic diagram after luminescence unit 108 and pixel defining layer 109 is formed on 00, pixel defining layer 109 limits pixel openings K, sends out
Light unit 108 is located in pixel openings K, which includes anode 1081, luminescent layer 1082 and the cathode being sequentially overlapped
1083, anode 1081 passes sequentially through the via hole on via hole and passivation layer 106 on flatness layer 107 and connect with drain electrode 1056.
Illustratively, using flexible display substrates as bottom emitting display base plate, the material of anode 1081 is ITO, pixel defining layer
109 material is epoxy resin, and the material of luminescent layer 1082 is luminous organic material, and the material of cathode 1083 is that metal Al is
Example then forms luminescence unit 108 on the rigid substrates 00 for be formed with flatness layer 107 and pixel defining layer 109 may include: head
It first, can be by any one of techniques such as deposition, magnetron sputtering or thermal evaporation in the rigid substrates 00 for being formed with flatness layer 107
One layer of ITO material layers of upper formation, handle ITO material layers to obtain anode 1081 by a patterning processes；Then, it uses
Spin coating, blade coating or chemical vapor deposition (English: Chemical Vapor Deposition；Appointing referred to as: CVD) etc. in techniques
It is a kind of to form epoxy resin material layer on the rigid substrates 00 for be formed with anode 1081, by exposure and imaging technique to epoxy
Resin material layer is handled to obtain pixel defining layer 109；Then, it is limited using InkJet printing processes in pixel defining layer 109
Pixel openings K in print and Organic luminescent material solution and be dried to obtain luminescent layer 1082, alternatively, using vapor deposition work
Luminous organic material is deposited in the pixel openings K that pixel defining layer 109 limits and obtains luminescent layer 1082 for skill；Finally by deposition
Or any one of techniques such as thermal evaporation form metal Al material layers on luminescent layer 1082, by a patterning processes to metal
Al material layers are handled to obtain cathode 1083.
It is readily appreciated that, display base plate may include the organic luminous layer of different colours, and the organic luminous layer of each color can
To be formed by an inkjet printing or an evaporation process, the organic luminous layer of different colours can be beaten by multiple ink-jet
Print or multiple evaporation process are formed.For example, display base plate may include red organic luminous layer, green organic luminous layer and indigo plant
Colour organic luminous layer, can repeat three times InkJet printing processes to form red organic luminous layer, green organic luminous layer
With blue organic luminous layer, or repeat three times evaporation process to form red organic luminous layer, green organic luminous layer
With blue organic luminous layer.In general, green organic luminous layer needs higher electric current during driving, and thicknesses of layers is than red
Colour organic luminous layer and blue organic light emission thickness, therefore, the homogeneity of the thickness of green organic luminous layer is usually poor, causes
The aging speed of the luminescent layer of different colours is different, and the uniformity that display base plate is shown is poor.In the embodiment of the present application, Ke Yixian
Green organic luminous layer is formed, so that in finally formed flexible display substrates, green organic luminous layer is closer to flexible base
Bottom promotes product yield to guarantee uniformity that display base plate is shown.
In step 207, rigid substrates are removed, flexible display substrates are obtained.
Rigid substrates can be removed using laser lift-off.Laser lift-off is flexible display substrates manufacturing process
In, the important process of rigid substrates is removed, cardinal principle is: the laser beam emitted using UV excimer laser, from rigid
Property substrate far from the side of flexible substrates irradiate the rigid substrates, so that laser beam is radiated at the flexible substrates through the rigid substrates
In the one side contacted with the rigid substrates, and react on one side with what the flexible substrates were contacted with the rigid substrates, the flexibility
The one side evaporation that substrate is contacted with the rigid substrates is realized so that rigid substrates be made to separate with flexible substrates to rigid substrates
Removing.
Figure 22 is please referred to, it illustrates provided by the embodiments of the present application a kind of using laser lift-off removing rigid substrates
00 schematic diagram can use laser, irradiate the rigid substrates 00 from rigid substrates 00 far from the side of flexible substrates 101,
Under the action of laser, the cohesive force between flexible substrates 101 and rigid substrates 00 is removed, to remove rigid substrates 00.
As shown in figure 22, orthographic projection of the luminescent layer 1082 on rigid substrates 00 is located at thermal insulation layer 103 in rigid substrates 00
On orthographic projection on, and grid 1051 on rigid substrates 00 orthographic projection and positive throwing of the heat-conducting layer 104 on rigid substrates 00
Shadow is overlapped, and so, entire flexible display substrates are just protected by thermal insulation layer 103 and heat-conducting layer 104.It is shelled using laser
When separating process removes rigid substrates 00, thermal insulation layer 103 can effectively completely cut off the high temperature heat of laser generation, and heat-conducting layer 104 can be with
The high temperature heat that will accumulate on thermal insulation layer 103 guides, and avoids the film layer of thermal accumlation damage flexible display substrates.
Please refer to Figure 23, it illustrates it is provided by the embodiments of the present application it is a kind of removing rigid substrates 00 after schematic diagram, stripping
From flexible display substrates 10 available after rigid substrates 00.As shown in figure 23,1082 region of luminescent layer is Flexible Displays
The display area of substrate 10, the dyke region of pixel defining layer 109 are the non-display area of flexible display substrates 10.
In conclusion the manufacturing method of flexible display substrates provided by the embodiments of the present application, since flexible substrates setting exists
On rigid substrates, and it is provided with thermal insulation layer and heat-conducting layer between flexible substrates and display structure, is using laser lift-off work
During skill removes rigid substrates, thermal insulation layer can completely cut off the high temperature heat of laser generation, and heat-conducting layer can generate laser
High temperature heat exported from flexible display substrates, therefore the high temperature heat that can be generated to avoid laser be burnt and be shown structure, be reduced
Influence of the process of removing rigid substrates to the quality of flexible display substrates.
In the manufacturing method for the display base plate that the embodiment of the present disclosure provides, a related patterning processes include photoresist
Coating, exposure, development, etching and photoresist lift off, by a patterning processes to material layers (such as ITO material layers) at
Reason includes: firstly, coating a layer photoresist in material layers (such as ITO material layers) forms photoresist layer, then, using exposure mask
Version is exposed photoresist layer, so that photoresist layer forms complete exposure region and non-exposed area, then, at developing process
Reason, is completely removed the photoresist of complete exposure region, and the photoresist of non-exposed area all retains, later, using etching technics
The corresponding region of exposure region complete in material layers (such as ITO material layers) is performed etching, finally, the photoetching of removing non-exposed area
Glue obtains corresponding structure (such as anode 1081).Here it is to be illustrated so that photoresist is positive photoresist as an example, works as light
When photoresist is negative photoresist, the processes of a patterning processes can refer to the description of this section, and the embodiment of the present disclosure is herein no longer
It repeats.
The sequencing of the manufacturing method step for the display base plate that the embodiment of the present disclosure provides can carry out appropriate adjustment, walk
Suddenly according to circumstances can also accordingly be increased and decreased, the technology model that anyone skilled in the art discloses in the disclosure
In enclosing, the method that can readily occur in variation should all cover within the protection scope of the disclosure, therefore repeat no more.
Based on same inventive concept, the embodiment of the present application also provides a kind of flexible display substrates, the Flexible Displays bases
Plate can be flexible display substrates 10 as shown in figure 23.
Referring to fig. 23, which includes: flexible substrates 101；Thermal insulation layer in flexible substrates 101
103 and heat-conducting layer 104；The display structure of side positioned at thermal insulation layer 103 and heat-conducting layer 104 far from flexible substrates 101.Such as Figure 23
Shown, thermal insulation layer 103 and 104 same layer of heat-conducting layer are distributed, and the thickness of thermal insulation layer 103 is equal with the thickness of heat-conducting layer 104.It is optional
Ground, thermal insulation layer 103 have hollowed out area, and heat-conducting layer 104 is located in hollowed out area and contacts with thermal insulation layer 103, so that heat-insulated
Layer 103 is distributed with 104 same layer of heat-conducting layer.Wherein, thermal insulation layer 103 is distributed with 104 same layer of heat-conducting layer and thickness is equal, it is ensured that
The planarization of flexible display substrates.
Optionally, the material of thermal insulation layer 103 is insulating materials, such as the material of thermal insulation layer 103 includes silica airsetting
The material of glue, heat-conducting layer 104 is conductive material, such as the material of heat-conducting layer 104 includes graphene.
Optionally, as shown in figure 23, display structure includes luminescence unit 108 and switch unit 105, and switch unit 105 wraps
Include grid 1051, gate insulation layer 1052, the active layer 1053, inter-level dielectric being sequentially distributed along the direction far from flexible substrates 101
Layer 1054 and source-drain electrode layer (not marking in Figure 23), source-drain electrode layer include source electrode 1055 and drain electrode 1056, and luminescence unit 108 includes
Anode 1081, luminescent layer 1082 and the cathode 1083 being sequentially distributed along the direction far from flexible substrates 101, anode 1081 and drain electrode
1056 connections；
Optionally, please continue to refer to Figure 23, the flexible display substrates 10 further include: be located at flexible substrates 101 and thermal insulation layer
Buffer layer 102 between 103, and, it is the passivation layer 106 of the side positioned at switch unit 105 far from flexible substrates 101, flat
Layer 107 and pixel defining layer 109, luminescence unit 108 are located in the pixel openings of the restriction of pixel defining layer 109,106 He of passivation layer
Flatness layer 107 has the via hole of connection, and anode 1081 passes sequentially through the via hole on via hole and passivation layer 106 on flatness layer 107
It is connect with drain electrode 1056.
It should be noted that the detailed construction description of flexible display substrates provided by the embodiments of the present application is in above method reality
It applies and has been described clear in example, details are not described herein.
In conclusion flexible display substrates provided by the embodiments of the present application, due to having between flexible substrates and display structure
There are thermal insulation layer and heat-conducting layer, and in manufacturing the flexible display substrates, flexible substrates are arranged on the rigid substrate, are using laser
During stripping technology removes rigid substrates, thermal insulation layer can completely cut off the heat of laser generation, and heat-conducting layer can produce laser
Raw heat is exported from display base plate, therefore the heat that can be generated to avoid laser burns and shows structure, is reduced and is removed rigid base
Influence of the process of plate to the quality of flexible display substrates.
Based on same inventive concept, the embodiment of the present application also provides a kind of flexible display apparatus, Flexible Displays dresses
It sets including flexible display substrates provided by the above embodiment, which can be el display device, for example,
OLED display or quantum dot light emitting (English: Quantum Dot Light Emitting Diodes；It is referred to as: QLED) aobvious
Showing device.The flexible display apparatus can be any products or components having a display function, for example, Electronic Paper, mobile phone, TV
Machine, display, Digital Frame, navigator, wrist-watch or bracelet etc..
The foregoing is merely the alternative embodiments of the application, not to limit the application, it is all in spirit herein and
Within principle, any modification, equivalent replacement, improvement and so on be should be included within the scope of protection of this application.
Claims (11)
1. a kind of manufacturing method of flexible display substrates, which is characterized in that the described method includes:
Flexible substrates are formed on the rigid substrate；
Thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with the flexible substrates；
Display structure is formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer；
The rigid substrates are removed, the flexible display substrates are obtained.
2. the method according to claim 1, wherein
Thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with the flexible substrates, comprising:
The thermal insulation layer and described is formed on the rigid substrates for being formed with the flexible substrates by a patterning processes
Heat-conducting layer.
3. according to the method described in claim 2, it is characterized in that,
It is described by a patterning processes formed on the rigid substrates for being formed with the flexible substrates thermal insulation layer and
The heat-conducting layer, comprising:
Heat-insulated material layers are formed on the rigid substrates for being formed with the flexible substrates；
The first photoetching offset plate figure is formed on the rigid substrates for being formed with the heat-insulated material layers；
To not performed etching by the region that first photoetching offset plate figure covers in the heat-insulated material layers, make the heat-insulated material
Layer forms hollowed out area, obtains the thermal insulation layer；
Heat-conducting layer, heat-conducting layer portion are formed on the rigid substrates for being formed with first photoetching offset plate figure
Quartile is in the hollowed out area；
First photoetching offset plate figure and the heat-conducting layer on first photoetching offset plate figure are removed, institute is obtained
State heat-conducting layer.
4. according to the method described in claim 3, it is characterized in that,
The first photoetching offset plate figure is formed on the rigid substrates for being formed with the heat-insulated material layers, comprising:
The first photoresist layer is formed on the rigid substrates for being formed with the heat-insulated material layers；
First photoresist layer is exposed using the first mask plate, and first photoresist layer after exposure is carried out
Development, obtains first photoetching offset plate figure；
The display structure includes: switch unit, and the switch unit includes grid, described to be formed with the thermal insulation layer and institute
It states and forms display structure on the rigid substrates of heat-conducting layer, comprising:
Conductive material layer and the second light are sequentially formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer
Photoresist layer, the polarity of second photoresist layer are opposite with the polarity of first photoresist layer；
Second photoresist layer is exposed using first mask plate, and to second photoresist layer after exposure
Develop, obtains the second photoetching offset plate figure；
To not performed etching by the region that second photoetching offset plate figure covers on the conductive material layer, make the conductive material
Layer forms the grid, and the grid is contacted with heat-conducting layer superposition, and positive throwing of the grid in the flexible substrates
Shadow is overlapped with orthographic projection of the heat-conducting layer in the flexible substrates；
Remove second photoetching offset plate figure.
5. according to the method described in claim 4, it is characterized in that,
The display structure includes luminescence unit and the switch unit,
It is described that display structure is formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer, further includes:
It is formed on the rigid substrates of the grid and sequentially forms gate insulation layer, active layer, interlayer dielectric layer and source-drain electrode layer, obtain
To the switch unit；
The method also includes: passivation layer, flatness layer are sequentially formed on the rigid substrates for being formed with the switch unit
And pixel defining layer；
It is described that display structure is formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer, further includes:
The flatness layer sequentially forms anode, luminescent layer and cathode far from the side of the rigid substrates, obtains the luminescence unit, institute
Luminescence unit is stated to be located in the pixel openings of pixel defining layer restriction；
It is formed before thermal insulation layer and heat-conducting layer on the rigid substrates for be formed with the flexible substrates, the method is also wrapped
It includes: forming buffer layer on the rigid substrates for being formed with the flexible substrates；
It is described that thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with the flexible substrates, comprising: to be formed with
The thermal insulation layer and the heat-conducting layer are formed on the rigid substrates of the buffer layer.
6. a kind of flexible display substrates, which is characterized in that the flexible display substrates include:
Flexible substrates；
Thermal insulation layer and heat-conducting layer in the flexible substrates；
The display structure of side positioned at the thermal insulation layer and the heat-conducting layer far from the flexible substrates.
7. flexible display substrates according to claim 6, which is characterized in that
The thermal insulation layer and the heat-conducting layer same layer are distributed.
8. flexible display substrates according to claim 7, which is characterized in that
The thermal insulation layer has hollowed out area, and the heat-conducting layer is located in the hollowed out area and contacts with the thermal insulation layer.
9. flexible display substrates according to claim 8, which is characterized in that
The thickness of the thermal insulation layer is equal with the thickness of the heat-conducting layer.
10. according to any flexible display substrates of claim 6 to 9, which is characterized in that
The display structure includes luminescence unit and switch unit, and the switch unit includes along the side far from the flexible substrates
To grid, gate insulation layer, active layer, interlayer dielectric layer and the source-drain electrode layer being sequentially distributed, the luminescence unit includes along separate
Anode, luminescent layer and the cathode that the direction of the flexible substrates is sequentially distributed；
The flexible display substrates further include: the buffer layer between the flexible substrates and the thermal insulation layer, and, it is located at
Passivation layer, flatness layer and the pixel defining layer of side of the switch unit far from the flexible substrates, the luminescence unit position
In the pixel openings that the pixel defining layer limits.
11. a kind of flexible display apparatus, including any flexible display substrates of claim 6 to 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910639614.7A CN110335970B (en) | 2019-07-15 | 2019-07-15 | Flexible display substrate, manufacturing method thereof and flexible display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910639614.7A CN110335970B (en) | 2019-07-15 | 2019-07-15 | Flexible display substrate, manufacturing method thereof and flexible display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110335970A true CN110335970A (en) | 2019-10-15 |
| CN110335970B CN110335970B (en) | 2022-01-18 |
Family
ID=68145329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910639614.7A Active CN110335970B (en) | 2019-07-15 | 2019-07-15 | Flexible display substrate, manufacturing method thereof and flexible display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110335970B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029379A (en) * | 2019-12-02 | 2020-04-17 | 武汉华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| CN112876203A (en) * | 2021-03-10 | 2021-06-01 | 合肥京东方卓印科技有限公司 | Aerogel composite material, display panel, manufacturing method and display device |
| CN113036065A (en) * | 2021-03-08 | 2021-06-25 | 京东方科技集团股份有限公司 | Flexible display substrate, preparation method thereof and display device |
| WO2022073284A1 (en) * | 2020-10-10 | 2022-04-14 | 深圳市华星光电半导体显示技术有限公司 | Oled display panel and manufacturing method therefor |
| CN114744136A (en) * | 2022-05-07 | 2022-07-12 | Tcl华星光电技术有限公司 | Flexible display panel and manufacturing method thereof |
| CN114828383A (en) * | 2021-01-21 | 2022-07-29 | 欣兴电子股份有限公司 | Circuit board structure and manufacturing method thereof |
| US12144207B2 (en) * | 2020-10-10 | 2024-11-12 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED display panel and method of manufacturing same |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104064685A (en) * | 2014-05-19 | 2014-09-24 | 京东方科技集团股份有限公司 | Flexible display substrate as well a manufacturing method thereof and flexible display device |
| CN104183785A (en) * | 2014-06-27 | 2014-12-03 | 京东方科技集团股份有限公司 | OLED device packaging method, OLED display panel and OLED display device |
| CN104465479A (en) * | 2014-12-19 | 2015-03-25 | 京东方科技集团股份有限公司 | Flexible display substrate mother board and manufacturing method of flexible display substrate |
| CN104752487A (en) * | 2015-03-12 | 2015-07-01 | 信利（惠州）智能显示有限公司 | Flexible substrate and preparation method for flexible display device |
| CN106384743A (en) * | 2016-10-20 | 2017-02-08 | 武汉华星光电技术有限公司 | Oled display and manufacturing method thereof |
| CN107154465A (en) * | 2017-05-26 | 2017-09-12 | 深圳市华星光电技术有限公司 | The package assembling and method for packing of OLED, display device |
| CN107507927A (en) * | 2017-07-11 | 2017-12-22 | 武汉华星光电半导体显示技术有限公司 | The preparation method of flexible display apparatus |
| CN107845740A (en) * | 2017-10-23 | 2018-03-27 | 武汉华星光电半导体显示技术有限公司 | The preparation method and flexible base board of a kind of flexible base board |
| CN108550552A (en) * | 2018-04-24 | 2018-09-18 | 昆山国显光电有限公司 | Display panel, display device, display panel motherboard and preparation method thereof |
-
2019
- 2019-07-15 CN CN201910639614.7A patent/CN110335970B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104064685A (en) * | 2014-05-19 | 2014-09-24 | 京东方科技集团股份有限公司 | Flexible display substrate as well a manufacturing method thereof and flexible display device |
| CN104183785A (en) * | 2014-06-27 | 2014-12-03 | 京东方科技集团股份有限公司 | OLED device packaging method, OLED display panel and OLED display device |
| CN104465479A (en) * | 2014-12-19 | 2015-03-25 | 京东方科技集团股份有限公司 | Flexible display substrate mother board and manufacturing method of flexible display substrate |
| CN104752487A (en) * | 2015-03-12 | 2015-07-01 | 信利（惠州）智能显示有限公司 | Flexible substrate and preparation method for flexible display device |
| CN106384743A (en) * | 2016-10-20 | 2017-02-08 | 武汉华星光电技术有限公司 | Oled display and manufacturing method thereof |
| CN107154465A (en) * | 2017-05-26 | 2017-09-12 | 深圳市华星光电技术有限公司 | The package assembling and method for packing of OLED, display device |
| CN107507927A (en) * | 2017-07-11 | 2017-12-22 | 武汉华星光电半导体显示技术有限公司 | The preparation method of flexible display apparatus |
| CN107845740A (en) * | 2017-10-23 | 2018-03-27 | 武汉华星光电半导体显示技术有限公司 | The preparation method and flexible base board of a kind of flexible base board |
| CN108550552A (en) * | 2018-04-24 | 2018-09-18 | 昆山国显光电有限公司 | Display panel, display device, display panel motherboard and preparation method thereof |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029379A (en) * | 2019-12-02 | 2020-04-17 | 武汉华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| WO2022073284A1 (en) * | 2020-10-10 | 2022-04-14 | 深圳市华星光电半导体显示技术有限公司 | Oled display panel and manufacturing method therefor |
| US20220352275A1 (en) * | 2020-10-10 | 2022-11-03 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Oled display panel and method of manufacturing same |
| US12144207B2 (en) * | 2020-10-10 | 2024-11-12 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED display panel and method of manufacturing same |
| CN114828383A (en) * | 2021-01-21 | 2022-07-29 | 欣兴电子股份有限公司 | Circuit board structure and manufacturing method thereof |
| CN113036065A (en) * | 2021-03-08 | 2021-06-25 | 京东方科技集团股份有限公司 | Flexible display substrate, preparation method thereof and display device |
| CN113036065B (en) * | 2021-03-08 | 2024-02-20 | 京东方科技集团股份有限公司 | Flexible display substrate, preparation method thereof and display device |
| CN112876203A (en) * | 2021-03-10 | 2021-06-01 | 合肥京东方卓印科技有限公司 | Aerogel composite material, display panel, manufacturing method and display device |
| CN112876203B (en) * | 2021-03-10 | 2023-04-07 | 合肥京东方卓印科技有限公司 | Aerogel composite material, display panel, manufacturing method and display device |
| CN114744136A (en) * | 2022-05-07 | 2022-07-12 | Tcl华星光电技术有限公司 | Flexible display panel and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110335970B (en) | 2022-01-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110335970A (en) | Flexible display substrates and its manufacturing method, flexible display apparatus | |
| US8084772B2 (en) | Organic light emitting display including an auxiliary electrode | |
| CN109950292A (en) | Display base plate and its manufacturing method, display device | |
| CN102956669B (en) | Organic light emitting apparatus and its manufacture method | |
| CN102960068B (en) | Organic EL display panel and manufacture method thereof | |
| KR101774278B1 (en) | Manufacturing method of flexible display device | |
| KR101659953B1 (en) | Organic light emitting display apparatus and the manufacturing method thereof | |
| CN101673758B (en) | Display device and manufacturing method thereof | |
| KR102416742B1 (en) | Transparent display devices | |
| CN102646695B (en) | Organic electroluminescence display device and method of manufacturing same and its manufacture method | |
| US10818856B2 (en) | Method for fabricating thin film transistor, method for fabricating array substrate, and a display apparatus | |
| CN103633110B (en) | Organic light emitting display device and method for fabricating the same | |
| US9343519B2 (en) | Method of manufacturing organic light emitting display device | |
| WO2016107291A1 (en) | Array substrate and manufacturing method therefor, display panel and display device | |
| US7692197B2 (en) | Active matrix organic light emitting display (OLED) and method of fabrication | |
| WO2015096308A1 (en) | Oled display panel and manufacturing method therefor | |
| CN109346506A (en) | A kind of array substrate and preparation method thereof, display panel | |
| CN104183616A (en) | Light emitting display device | |
| CN103872258A (en) | Organic light emitting diode display device and method of fabricating the same | |
| CN106783953A (en) | Thin film transistor (TFT) and preparation method thereof | |
| TW201601364A (en) | Organic light emitting device and method of manufacturing the device | |
| JP5741832B2 (en) | Active matrix substrate, method for manufacturing active matrix substrate, and liquid crystal display device | |
| WO2003056881A1 (en) | Image display device and method of manufacturing the device | |
| US20030030369A1 (en) | Method for forming a passivation layer for organic light-emitting devices | |
| WO2005057530A1 (en) | Thin film transistor integrated circuit device, active matrix display device, and manufacturing method of the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |