CN110334470B - Multiband negative group delay circuit based on coupling line - Google Patents

Abstract

The invention discloses a multi-band negative group delay circuit based on coupled lines. The circuit has a symmetrical structure and includes a microstrip line IL _i , i={1, 2, 3} and a coupled microstrip composed of three microstrip lines. line, the microstrip line IL ₁ , microstrip line IL ₂ and microstrip line IL ₃ are all two; the upper end microstrip connection line of the coupled microstrip line is respectively symmetrically connected to a microstrip line IL ₁ , the two microstrip lines The strip line IL ₁ is respectively connected to port three and port four, and the middle microstrip connection line of the coupled microstrip line is respectively symmetrically connected to one port microstrip line IL ₃ , and the two port microstrip line IL ₃ are respectively connected to port one and port two, The microstrip connection line at the lower end of the coupled microstrip line is respectively symmetrically connected to a microstrip line IL ₂ , and the two microstrip lines IL ₂ are respectively connected to port five and port six; the length L ₁ of the coupled microstrip line is 10.7mm, and the coupled microstrip line The coupling spacing S ₁ and S ₂ between the strip lines are 1.7mm and 1.8mm respectively, the length L ₂ of the microstrip line IL ₁ is 10mm and 1.9mm; the length L ₄ of the port microstrip line IL ₃ is 9mm; The length _L3 of the microstrip line IL ₂ is 7.4 mm, and the width w of the microstrip lines IL ₁ , IL ₂ , IL ₃ and the coupling microstrip line is 1.9 mm.

Description

A Multiband Negative Group Delay Circuit Based on Coupled Lines

technical field

The invention belongs to the technical field of microwave engineering, in particular to a multi-band negative group delay circuit based on coupled lines.

Background technique

In the early 20th century, after American scientists A.Sommerfeld and L.Brillouin proposed the possibility of negative group delay, "negative group delay" was controversial for a long time, until Chu and Wong of Bell Laboratories Negative group velocity is observed for the first time in experiments where laser pulses pass through a GaP:N sample. Since then, in other optical and quantum experiments, it has been confirmed many times that the group velocity is negative or greater than the speed of light. After entering the 20th century, with the development of new materials such as left-handed materials and the higher and higher requirements for the performance of communication systems, more researchers began to study group delay. Especially in recent years, the negative group delay circuit has attracted the attention of researchers all over the world because of its special performance and wide application in the fields of feedforward amplifiers and antenna arrays, and has become another research hotspot.

In recent years, the negative group delay circuit starts from the simplest RLC resonant unit, but the loss of the basic negative group delay circuit based on RLC is relatively large, so the combination of RLC resonant network and amplifier is often used to reduce the loss of the circuit. In addition, in addition to the above-mentioned active negative group delay circuit composed of RLC and amplifier, recently, the passive negative group delay circuit formed by using the structure related to the microstrip line can be developed to high frequency due to its low loss. , some related passive structures are proposed. Some works like this are mostly explored by foreign researchers, but negative group delay circuits are rarely explored in China.

Contents of the invention

The technical problem to be solved by the present invention is aimed at the deficiencies of the above-mentioned prior art. Based on microwave engineering theory, in order to reduce the loss and reflection of the negative group delay circuit and improve the group delay, a multi-band negative group time delay based on coupled lines is provided. delay circuit.

For realizing above-mentioned technical purpose, the technical scheme that the present invention takes is:

A multi-band negative group delay circuit based on coupled lines, the circuit is a symmetrical structure, including a microstrip line IL _i , i={1, 2, 3} and a coupled microstrip line composed of three microstrip connecting lines, The microstrip line IL ₁ , the microstrip line IL ₂ and the microstrip line IL ₃ are two; the microstrip connecting line at the upper end of the coupled microstrip line is respectively symmetrically connected to a microstrip line IL ₁ , and the two microstrip lines Strip line IL ₁ is respectively connected to port three and port four, and the middle microstrip connection line of the coupled microstrip line is symmetrically connected to one port microstrip line IL ₃ respectively, and the two port microstrip lines IL ₃ are respectively connected to port one and port 2. The microstrip connection lines at the lower end of the coupled microstrip line are respectively symmetrically connected to a microstrip line IL ₂ , and the two microstrip lines IL ₂ are respectively connected to port five and port six;

The length L ₁ of the coupled microstrip line is 10.7mm, the coupling spacing S ₁ and S ₂ between the coupled microstrip lines are 1.7mm and 1.8mm respectively, and the length L ₂ of the microstrip line IL ₁ is 10mm and 1.9mm; the length L ₄ of the port microstrip line _{IL 3} is 9mm; the length of the microstrip line IL ₂ is 7.4mm, and the microstrip line IL ₁ , IL ₂ , IL ₃ and the coupling microstrip line The width w of the strip lines is all 1.9 mm.

In order to optimize the above technical solutions, the specific measures taken also include:

The above-mentioned circuit size is 28.7mm×30.6mm.

The above-mentioned circuit adopts FR4 plate, the thickness of which is 1.6mm, the dielectric constant is 4.4, the tangent loss is 0.02, and the copper thickness is 0.035mm.

The above-mentioned circuit works in the S-band, and dual-frequency can be realized between port 1 and port 2 of the circuit. The port 1 and port 2 are the input port and output port of the signal respectively. When the center frequency is 2.48GHz and 2.9GHz, the circuit The group delays are -1.6ns, -1.2ns respectively, the insertion loss S ₂₁ of the circuit is -3.6dB, -3.3dB respectively, and the reflection coefficient S ₁₁ of the circuit is -11dB, -12dB respectively.

The above-mentioned circuit works in the S-band, and dual-frequency can be realized between port 3 and port 4 of the circuit. The port 3 and port 4 are the input port and output port of the signal respectively. When the center frequency is 2.6GHz and 2.95GHz, the circuit The group delays are -1.3ns, -0.2ns respectively, the insertion loss S ₄₃ of the circuit is -3.3dB, -1.6dB respectively, and the reflection coefficient S ₃₃ of the circuit is -12dB, -15dB respectively.

The above-mentioned circuit works in the S-band, and dual-frequency can be realized between port 5 and port 6 of the circuit. The port 5 and port 6 are the input port and output port of the signal respectively. When the center frequency is 2.43GHz and 2.82GHz, the circuit The group delays are -0.5ns, -1.7ns respectively, the insertion loss S ₆₅ of the circuit is -3.3dB, -1.6dB respectively, and the reflection coefficient S ₅₅ of the circuit is -20dB, -12dB respectively.

Beneficial effects of the present invention:

In order to realize the miniaturization of the circuit, reduce the loss and reflection of the circuit, and improve the bandwidth and delay of the group delay, a multi-band negative group delay circuit based on coupled lines is designed, and the designed circuit is optimized. A multi-band negative group delay circuit is obtained. Finally, it can be obtained that dual frequency can be realized between port 1 and port 2 of the circuit. When the center frequencies are 2.48GHz and 2.9GHz, the group delay of the circuit is -1.6ns and -1.2ns respectively, and the insertion loss of the circuit is S ₂₁ They are -3.6dB and -3.3dB respectively, and the reflection coefficient S ₁₁ of the circuit is -11dB and -12dB respectively.

Dual frequency can be realized between port 3 and port 4 of the circuit. When the center frequency is 2.6GHz and 2.95GHz, the group delay of the circuit is -1.3ns, -0.2ns respectively, and the insertion loss S ₄₃ of the circuit is -3.3 dB, -1.6dB, the reflection coefficient S ₃₃ of the circuit is -12dB, -15dB respectively.

Dual frequency can be realized between ports 5 and 6 of the circuit. When the center frequency is 2.43GHz and 2.82GHz, the group delay of the circuit is -0.5ns, -1.7ns respectively, and the insertion loss S ₆₅ of the circuit is -3.3dB , -1.6dB, the reflection coefficient S ₅₅ of the circuit is -20dB, -12dB respectively. This multi-band negative group delay circuit can be used in microwave circuits of various frequency bands to solve the delay problem of circuit signals.

Description of drawings

Fig. 1 schematic circuit diagram of the present invention;

Fig. 2 is a schematic diagram of the circuit structure of the present invention;

Fig. 3 is the circuit ADS model of the present invention;

Fig. 4 is the group time delay delay (2,1) simulation result schematic diagram of circuit of the present invention;

Fig. 5 is the S (2,1) simulation result schematic diagram of circuit of the present invention;

Fig. 6 is the S (1,1) simulation result schematic diagram of circuit of the present invention;

Fig. 7 is the group time delay delay (4,3) simulation result schematic diagram of circuit of the present invention;

Fig. 8 is the schematic diagram of the simulation result of the loss S (4,3) of the circuit of the present invention;

Fig. 9 is the schematic diagram of the reflection S (3,3) simulation result of the circuit of the present invention;

Fig. 10 is a schematic diagram of the group delay delay (6,5) simulation result of the circuit of the present invention;

Fig. 11 is the schematic diagram of the simulation result of the loss S(6,5) of the circuit of the present invention;

Fig. 12 is a schematic diagram of the reflection S(5,5) simulation result of the circuit of the present invention.

Detailed ways

Embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings.

As shown in Figure 1, the present invention is a multi-band negative group delay circuit based on coupled lines, the circuit is a symmetrical structure, including microstrip line IL _i , i={1, 2, 3} and three microstrips A coupled microstrip line composed of connection lines, the microstrip line IL ₁ , microstrip line IL ₂ and microstrip line IL ₃ are all two; the upper end microstrip connection line of the coupled microstrip line is respectively symmetrically connected to a microstrip line Strip line IL ₁ , the two microstrip lines IL ₁ are respectively connected to port three and port four, and the middle microstrip connection line of the coupled microstrip line is respectively symmetrically connected to one port microstrip line IL ₃ , the two port microstrip lines Line IL ₃ is respectively connected to port 1 and port 2, and the microstrip connection line at the lower end of the coupled microstrip line is symmetrically connected to a microstrip line IL ₂ respectively, and the two microstrip lines IL ₂ are respectively connected to port 5 and port 6;

The length L ₁ of the coupled microstrip line is 10.7mm, the coupling spacing S ₁ and S ₂ between the coupled microstrip lines are 1.7mm and 1.8mm respectively, and the length L ₂ of the microstrip line IL ₁ is 10mm and 1.9mm; the length L ₄ of the port microstrip line _{IL 3} is 9mm; the length of the microstrip line IL ₂ is 7.4mm, and the microstrip line IL ₁ , IL ₂ , IL ₃ and the coupling microstrip line The width w of the strip lines is all 1.9 mm.

As shown in Fig. 2 and Fig. 3, the circuit structure of the present invention is a symmetrical structure.

The optimization results of ADS for this circuit size are shown in the table below:

Table 1. Basic parameter dimensions of the circuit

w 1.9mm L ₁ 10.7mm L ₂ 10mm L ₃ 7.4mm L ₄ 9mm S ₁ 1.7mm S ₂ 1.8mm size 28.7mm×30.6mm

Fig. 4, Fig. 5 and Fig. 6 are schematic diagrams of simulation results of group delay delay ₂₁ , insertion loss S ₂₁ , and reflection coefficient S ₁₁ between port 1 and port 2 of the patented circuit respectively. It can be seen from the schematic diagram that the circuit works in the S-band, and dual-band can be realized between port 1 and port 2 of the circuit. When the center frequency is 2.48GHz and 2.9GHz, the group delay of the circuit is -1.6ns and -1.2ns respectively. , the insertion loss S ₂₁ of the circuit is -3.6dB, -3.3dB respectively, and the reflection coefficient S ₁₁ of the circuit is -11dB, -12dB respectively.

Fig. 7, Fig. 8, and Fig. 9 are schematic diagrams of simulation results of group delay delay ₄₃ , insertion loss S ₄₃ , and reflection coefficient S ₃₃ between port three and port four of the patented circuit, respectively. It can be seen from the schematic diagram that the circuit works in the S-band, and dual-band can be realized between port 3 and port 4 of the circuit. When the center frequency is 2.6GHz and 2.95GHz, the group delay of the circuit is -1.3ns, -0.2ns respectively , the insertion loss S ₂₁ of the circuit is -3.3dB, -1.6dB respectively, and the reflection coefficient S ₁₁ of the circuit is -12dB, -15dB respectively.

Fig. 10, Fig. 11, and Fig. 12 are schematic diagrams of simulation results of group delay delay ₆₅ , insertion loss S ₆₅ , and reflection coefficient S ₅₅ between ports five and six of the patented circuit, respectively. It can be seen from the schematic diagram that the circuit works in the S-band, and dual-band can be realized between port 5 and port 6 of the circuit. When the center frequency is 2.43GHz and 2.82GHz, the group delay delay ₆₅ of the circuit is -0.5ns, - 1.7ns, the insertion loss S ₆₅ of the circuit is -3.3dB, -1.6dB respectively, and the reflection coefficient S ₅₅ of the circuit is -20dB, -12dB respectively.

In this embodiment, the ADS model of the circuit adopts FR4 plate, the thickness of which is 1.6mm, the size is 28.7mm×30.6mm, the dielectric constant is 4.4, the tangent loss angle is 0.02, and the copper thickness is 0.035mm.

Using the simulation software ADS to simulate the design optimization of the proposed circuit, the basic parameter size of the circuit shown in Table 1 can be obtained.

The above are only preferred implementations of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions under the idea of the present invention belong to the protection scope of the present invention. It should be pointed out that for those skilled in the art, some improvements and modifications without departing from the principle of the present invention should be regarded as the protection scope of the present invention.

Claims (3)

1. A multi-band negative group delay circuit based on coupled lines, characterized in that: said circuit is a symmetrical structure, comprising microstrip line IL _i , i={1, 2, 3} and three microstrip connecting lines are formed The coupled microstrip line, the microstrip line IL ₁ , the microstrip line IL ₂ and the microstrip line IL ₃ are two; the upper end microstrip connection line of the coupled microstrip line is respectively symmetrically connected to a microstrip line IL ₁ , the two microstrip lines IL ₁ are respectively connected to port three and port four, and the middle microstrip connection line of the coupled microstrip line is symmetrically connected to one port microstrip line IL ₃ respectively, and the two port microstrip lines IL ₃ Port 1 and port 2 are respectively connected, and the microstrip connection line at the lower end of the coupled microstrip line is respectively symmetrically connected to a microstrip line IL ₂ , and the two microstrip lines IL ₂ are respectively connected to port 5 and port 6; The length L ₁ of the coupled microstrip line is 10.7mm, the coupling spacing S ₁ and S ₂ between the coupled microstrip lines are 1.7mm and 1.8mm respectively, and the length L ₂ of the microstrip line IL ₁ is 10mm and 1.9mm; the length L ₄ of the port microstrip line _{IL 3} is 9mm; the length of the microstrip line IL ₂ is 7.4mm, and the microstrip line IL ₁ , IL ₂ , IL ₃ and the coupling microstrip line The width w of the strip line is 1.9mm; the circuit works in the S frequency band, and dual frequency can be realized between the port one and the port two of the circuit, and the port one and port two are respectively the input port and the output port of the signal. When the center frequency is 2.48GHz and 2.9GHz, the group delay of the circuit is -1.6ns, -1.2ns respectively, the insertion loss S ₂₁ of the circuit is -3.6dB, -3.3dB respectively, and the reflection coefficient S ₁₁ of the circuit is -11dB respectively , -12dB; the circuit works in the S frequency band, and dual frequency can be realized between the port three and the port four of the circuit. During GHz, the group time delay of circuit is respectively-1.3ns,-0.2ns, and the insertion loss _S43 of circuit is respectively-3.3dB,-1.6dB, and the reflection coefficient _S33 of circuit is respectively-12dB,-15dB; The circuit works in the S-band, and dual-frequency can be realized between port five and port six of the circuit. The port five and port six are the input port and output port of the signal respectively. When the center frequency is 2.43GHz and 2.82GHz, the group of the circuit The time delays are -0.5ns, -1.7ns respectively, the insertion loss S ₆₅ of the circuit is -3.3dB, -1.6dB respectively, and the reflection coefficient S ₅₅ of the circuit is -20dB, -12dB respectively. 2. A multi-band negative group delay circuit based on coupled lines according to claim 1, characterized in that: said circuit size is 28.7mm×30.6mm. 3. a kind of multi-band negative group delay circuit based on coupled lines according to claim 1, is characterized in that: described circuit adopts FR4 plate material, and described plate material thickness is 1.6mm, and dielectric constant is 4.4, and tangent loss is 0.02, and the copper thickness is 0.035mm.

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