CN110214291A - Beam homogenization device based on lens array - Google Patents
Beam homogenization device based on lens array Download PDFInfo
- Publication number
- CN110214291A CN110214291A CN201780069455.0A CN201780069455A CN110214291A CN 110214291 A CN110214291 A CN 110214291A CN 201780069455 A CN201780069455 A CN 201780069455A CN 110214291 A CN110214291 A CN 110214291A
- Authority
- CN
- China
- Prior art keywords
- mask
- sub
- profile
- light
- correction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
- G02B27/0961—Lens arrays
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Correction mask (10) of the one kind for beam homogenization device (100) includes lens array (11).Correction mask is configured to provide for the incipient beam of light profile (I0 ') of forming.The subset of multiple optical paths (Pa) between incident beam (B0) and illumination plane (14) is at least partly corrected mask (10) and stops to provide further homogenization beam profile (I2), and beam profile (I2) has the intensity variation (Δ I2) further decreased relative to initial uniform beam profile (I1).Mask includes according to multiple sub- masks (10a) with matched mask grid layout (M) arrangement of the lens grid of lens array (11) layout (L).The design of each of sub- mask (10a) has specific sub- mask pattern, passes through specific one respective sub-areas in lenslet (11a) with forming (S) incipient beam of light profile (I0).
Description
Technical field
This disclosure relates to the beam homogenization device based on lens array, the lithography system including the beam homogenization device, for changing
Into the beam homogenization device correction mask, manufacture the correction mask method and execute this method software instruction.
Background technique
In the optical system used in such as photoetching, it is intended to provide the smallest illumination of Strength Changes, that is, is had uniformly (flat
Top) intensity profile light beam.For example, describing the mask of circuit pattern (mask) by equably in Lithographic projection stepper
Irradiation is for projecting and lithographic patterning is to target substrate (chip).In order to by incipient beam of light profile transformation be flat intensity
Various homogenizing optical devices can be used in profile.
In typical (imaging or non-imaged) lens array homogenizer, lens array by the light beam substantially collimated (for example,
With Gauss or flat-top profile) it is divided into a large amount of beamlets with separate optical path, the optical path can extend to identical size simultaneously
And it is superimposed in identical output position (illumination plane).Substantially, different portions of the lens array homogenizer to incipient beam of light profile
Divide and is mixed to realize the uniform beam profile with overall good uniform strength profile.Uniform intensity distribution is still not
Ideal, because it can be by constructing unevenly partially being summarized for light beam.In addition, intensity profile can be by foozle
(such as (micro-) optical element surface error and anti-reflection coating quality) influence.It is challenging uniform in order to meet
Property require (such as variation < 1%), it is expected that being further improved initial uniform beam profile.
US7428039B2 describes a kind of for projecting laser beam on mask to irradiate the optical system of mask.The system
Including beam uniformity device, which includes (cylinder) microlens array spaced apart.The redistribution of beam uniformity device
Light in laser beam, so that the luminous intensity of the laser beam on mask is almost uniform along the horizontal axis of laser beam.Lenticule battle array
The diaphragm being partly extended in laser beam between column provides on mask along horizontal axis can be real than individual microlens array
The luminous intensity of existing luminous intensity more evenly.However, the type of correction may be limited, be difficult to control and due to dependent on column
Face lens and primary only realize correction in one direction.
WO2011/039261 is disclosed with the diaphragm (Figure 12 b) extended in beam profile or is wherein passed through movement
Rectangular edges form the embodiment of mask pattern (Figure 12 e).However, these embodiments still possibly can not provide desired end
Contouring and uniformity controlling.
It is expected that improving the control of the uniformity to luminaire beam profile.
Summary of the invention
The one side of the disclosure provides the beam homogenization device including lens array and correction mask.
In some embodiments, lens array is configurable to receive incident beam.Incident beam has incipient beam of light
There is initial light intensity to be homogenized to change for profile, incipient beam of light profile.Lens array is by according to lens grid layout placement
Multiple lenslets formed.Preferably, lens grid layout crosses over the region of incipient beam of light profile.For example, each lenslet cloth
It sets in corresponding optical path, to project the parts of images (expression) of the respective sub-areas of incipient beam of light profile at illumination plane.
Therefore, multiple portions image can be projected to be overlapped at illumination plane, to form incipient beam of light profile at illumination plane
Initial uniform beam profile.By the overlapping of parts of images, initial uniform beam profile be can have relative to entering
The intensity variation of initial light intensity variation in the incipient beam of light profile of irradiating light beam initially reduced.
In the embodiment with this lens array, correction mask can be configured to provide the incipient beam of light wheel of forming
It is wide.For example, the subset of multiple optical paths between incident beam and illumination plane is at least partly corrected mask blocks, to provide
Further homogenization beam profile with the intensity variation further decreased relative to initial uniform beam profile.This
Outside, mask is preferably included covers according to multiple sons that the lens grid with lens array is laid out matched mask grid layout placement
Mould.Therefore, mask grid layout can be laid out with lens grid and be aligned.For example, each of sub- mask can design spy
Fixed sub- mask pattern, with shape incipient beam of light profile by specific one respective sub-areas in lenslet.
By using the corresponding figure with the subregion by corresponding lenslet for being designed to shape incipient beam of light profile
Multiple sub- masks of case can obtain individually control to the projection of the parts of images of selection quantity.It specifically, can be accurately
Control selected parts of images which be partially projected onto illumination plane with generate further homogenization beam profile.It is logical
It crosses and is directed at the edge of corresponding sub- mask with the edge of corresponding lenslet, being blocked for incipient beam of light profile can partially hindered
Corresponding more low intensive projection image is provided at the position of stopper point.For example, if the outer edge of lenslet is covered by corresponding son
Mould stops, then the strength reduction of this outer edge that may cause homogenization beam profile.Therefore, this can be used for correcting initial equal
Homogenize the edge of beam profile is higher than mean intensity.Equally, the other parts of the profile can also be corrected.Therefore, right
The uniformity of luminaire beam profile obtains improved control.
It will be understood that the disclosure is specifically suitble to combine with spherical (such as ellipse) lenslet, that is, it is not limited to cylindrical lens
Array.Correspondingly, lenslet grid can be two-dimensional grid, and the sequence of plurality of lenslet is prolonged upwards in either grid
It stretches.For example, lenslet can be lenticule, size is between 1 hundred to three thousand micron, preferably between one to three millimeters.
In general, the height and width of sub- mask may be adapted to match lenslet height and width, such as sub- mask grid spacing with
The grid spacing of lens array is identical.
The edge of sub- mask may be adapted to the expectation correction of matching initial homogenization beam profile.For rotational symmetry light beam
Profile, sub- mask preferably have corresponding round (such as ellipse) edge, this is edge limited to be corrected with the profile
The corresponding region for stopping light in part.The center of the circular edge of sub- mask can be aligned with the center of corresponding lenslet.Example
Such as, for the intensity profile with relatively high-intensitive (for example, in intermediate flat-top with sinking intensity) at calibration edge, son is covered
Mould can be designed as stopping the light at outer circular edge while pass light through centre.On the contrary, the phase too high for intermediate intensity
Anti- situation, middle section can be blocked.According to initial uniform beam profile to be corrected, can also be combined.
In general, each of sub- mask have symmetrical pattern, for example, on one or two orthogonal direction point symmetry and/or
Symmetrically.In order to match the image (such as with square or rectangular dimension) across lenslet, sub- mask pattern can be any
It is stretched in dimension.By providing fixed position in mask grid layout for every sub- mask pattern, it is aligned relatively easy.Example
Such as, there is the correction mask of the sub- mask of fixed relative position and corresponding lens array with two, three, four, or more
Column alignment.
Around mask grid layout be symmetrically distributed sub- mask can be it is beneficial, for example, minimize lenslet
Intensity gradient on region influences and/or beam deviation.For example, the ladder in symmetrical beam profile, in the first lenslet region
Degree can be compensated by the gradient in the second lenslet on opposite sides region at center.In addition, if beam deviation, then one
Intensity at a lenslet region can reduce, and the intensity at another region increases.In order to further improve compensation effect,
Position and the pattern of sub- mask can be arranged according to point symmetry distribution, for example, wherein the first sub- mask pattern and with center phase
Pair half rotation the second sub- mask pattern it is identical.
Final beam profile is further smoothed in order to realize, it may be desirable to the set of different sub- mask patterns.For example,
Correction mask includes the set of the sub- mask of two, three, four, or more different pattern.Depending on used small
Intensity distribution in the quantity and lenslet region of mirror, each lenslet region may contribute obtained profile the effect of very little
Fruit.By providing the repeating of each pattern (especially when the intensity in beam profile may lower side to correction mask
When being used at edge), effect can be increased.
In general, mask can be across the whole region with transparent region and the lens array of opaque region.For example, covering
Mould can be limited by sub- mask, and sub- mask blocks are by the part of the light of corresponding lenslet to shape their resulting light beam wheels
It is wide.The masks area of light is not stopped to can be transparent, it may for example comprise transparent material.This, which can permit, is placed on sub- mask
Any position in mask layout, for example, being placed on has the effect of that the position of expectation strength is big to realize.On the other hand, right
In certain applications (such as Extreme Ultraviolet), it may be desirable to provide material as few as possible in the optical path of light beam.This and
In the case of other, mask can be limited by the hole without any material, and neutron mask pattern is arranged around the edge in hole.
In some cases, being especially for use at hole does not have the edge mask of material, it may be difficult to realize to include two
Or more breaking part sub- mask pattern.Therefore, it is contemplated that sub- mask pattern can be distributed in two with corresponding sub-pattern
On a or more sub- mask.For example, every sub- mask can be formed by the subset of two or more breaking parts, to allow
Sub-pattern is attached to the edge of the not centre bore of carrying material.This allows to form pattern in the edge of mask, and otherwise, which will
With swimming in breaking part in the air.For example, sub-pattern forms two half-unit, they constitute expected sub- mask artwork together
Case, wherein the half of corresponding sub-pattern forms the corresponding half of expected sub- mask pattern.In the sub- mask, (disconnection) is another
Half can be without material or completely filled with material, it is intended to stop the light of incident beam.Indicate that the other half sub- mask can be
The first half mirror image or rotation copy.
In order to realize desired effect, correction mask is arranged in the optical path of light beam, is preferably provided in illumination plane phase
For at the conjugate planes of projection system (near or).In this way, the pattern of sub- mask can be imaged onto illumination plane.
By the way that correction mask to be arranged close to lens array, can be relatively easily aligned.For example, correction mask can be made to be bonded
(fitagainst) lens array.By by mask-placement in the optical path before lens array, for example, being arranged in incident beam
Collimating part in, the distance to lens array may be not too important.
It will be understood that beam homogenization device can be a part of the illuminator system with lens and/or mirror, the lens
And/or mirror is configured to project uniform beam at illumination plane.Uniform beam can pass through the different piece to incident beam
Projection be overlapped to be formed.In some embodiments, beam homogenization device includes two lens arrays.Can also use replace
Generation and/or other lens and/or mirror.For example, fourier lense may be used as a part of projection system.
A part that beam homogenization device can be used as imaging system carries out useful application.For example, by pattern to be imaged
It is placed at or near the illumination plane of homogenizer equably to irradiate.For example, can by the mask with circuit pattern at
On picture to chip.Therefore, some aspects of the disclosure can provide the lithography system including beam homogenization device as described herein.
The aspect alternatively or additionally of the disclosure can be related to such correction mask.Correction mask is intended for improving base
In the homogenizer of lens array, to provide further homogenization beam profile, this further homogenizes beam profile relative to not
The initial uniform beam profile of homogenizer with correction mask has the intensity variation further decreased.In some embodiment party
In formula, mask includes multiple sub- masks that basis is laid out matched mask grid layout placement with the lens grid of lens array,
Wherein mask grid layout will be laid out with lens grid and be aligned, and the design of each of neutron mask has specific sub- mask artwork
Case, with shape incipient beam of light profile by specific one respective sub-areas in lenslet.For example, correction mask is apodization
Mask, for example, having the aperture mask of patterned edge.
The other aspect of the disclosure can also provide a kind of method for manufacturing correction mask, which is used for
Improve beam homogenization device as described herein with lens array.In some embodiments, this method includes configuration correction
Mask is to provide the incipient beam of light profile of forming.The subset of multiple optical paths between incident beam and illumination plane is at least partly
Be corrected mask blocks, with provide relative to initial uniform beam profile have the intensity variation further decreased into one
Step homogenization beam profile.In addition, mask includes being laid out matched mask grid layout according to the lens grid of lens array
Multiple sub- masks of arrangement.Mask grid layout will be laid out with lens grid and be aligned.The design of each of sub- mask has specific
Sub- mask pattern, with shape incipient beam of light profile by specific one respective sub-areas in lenslet.
It, can be with by measuring initial uniform beam profile at the illumination plane of the beam homogenization device without correction mask
Determine that desired correction should be.For example, correction mask can be designed by adding multiple sub- masks.Every sub- mask
It can have edge, which is shaped as the subregion corresponding to corresponding lenslet for being partially blocked by incipient beam of light profile.
It can calculate and/or measure combined effect.For example, the part that is blocked of subregion can correspond to measured initial uniform
The part of beam profile having higher than average luminous intensity.By reducing the intensity of the subregion, the whole of uniformity may be implemented
Structural reform is kind.
Additionally or alternatively, pass through the incipient beam of light wheel of the measurement incident beam at the position of correction mask to be placed
Exterior feature can measure and/or calculate the relative contribution of the light for the different subregions being laid out by mask grid.It can use covering to cover
The sub- mask pattern of difference of the different subregions of lay wire lattice layout is laid out to generate mask grid.Therefore, it can be covered based on covering
The sub- mask patterns of difference of the different subregions of lay wire lattice layout and its relative contribution calculate correction profile.In this way,
Correction profile can be optimized to provide further homogenization beam profile.
The optimization of correction profile may include the adaptation of various parameters, for example, changing the edge shape of different sub- mask patterns
Incipient beam of light wheel of the quantity and/or the sub- mask pattern of change of every sub- mask pattern relative to measurement used in shape, change
Wide position.It, can be with for example, by the respective diameters for changing the sub- mask edge in one or more sub- mask patterns of difference
Change the range for stopping edge.For example, passing through the quantity for changing used sub- mask, thus it is possible to vary cumulative correction effect.For example,
By changing the position of sub- mask, the position with relatively low or high contribution can choose to change correcting value.
Some aspects as described herein can be presented as the non-transitory computer-readable medium with software instruction, institute
The step of stating software instruction when executed for example makes computer execute method as described herein.Computer-readable medium can also
To be for example to store in memory or otherwise a part of addressable corresponding system as described herein.
Detailed description of the invention
According to be described below, appended claims and attached drawing are better understood with the equipment, system and method for the disclosure
These and other features, aspects and advantages, in the accompanying drawings:
Figure 1A and Figure 1B is schematically shown without correction mask and the beam homogenization device with correction mask
Embodiment；
Fig. 2A and Fig. 2 B respectively illustrates the X-Y scheme and profile diagram of the intensity distribution of initial uniform beam profile；
Fig. 3 A and Fig. 3 B respectively illustrate the X-Y scheme and profile diagram of the intensity distribution of incipient beam of light profile；
Fig. 4 A and Fig. 4 B respectively illustrate the first embodiment of correction mask and corresponding sub- mask pattern；
Fig. 5 A and Fig. 5 B respectively illustrate the further homogenization obtained using correction mask according to first embodiment
The X-Y scheme and profile diagram of the calculating intensity distribution of beam profile；
Fig. 6 A and Fig. 6 B respectively illustrate the second embodiment of correction mask and its corresponding sub- mask pattern；
Fig. 7 A and Fig. 7 B illustrate how to realize there is disconnection in the edge of the correction mask according to second embodiment
The sub- mask pattern of partial expection；
Fig. 8 A and Fig. 8 B are respectively illustrated using the initial uniform light obtained according to the correction mask of second embodiment
The measurement intensity distribution of beam profile and further homogenization beam profile.
Specific embodiment
In some cases, it is convenient to omit to the detailed description of known device and method, in order to avoid fuzzy system and method
Description.Term for describing particular implementation is not intended to be limited to the present invention.As it is used herein, unless context is another
It clearly states, otherwise singular " one ", "one" and "the" are intended to also include plural form.Term "and/or" includes one
Any and all combinations of a or more correlation institute list.It will be understood that term " includes " and/or "comprising" specify the feature
Presence, but be not excluded for the presence or addition of other one or more features.It will be further understood that, it is unless otherwise indicated, no
Then referred to after other steps in method the particular step of method by when, the step can directly other described steps it
Afterwards, or one or more intermediate steps can be executed before executing the particular step.
The present invention is described more fully with hereinafter with reference to attached drawing, embodiment the invention is shown in the accompanying drawings.Show
The description of example property embodiment is intended to read in conjunction with the accompanying, and attached drawing is considered as a part of entire written description.Attached
In figure, for the sake of clarity, the absolute and relative size of system, component, layer and region can be exaggerated.Be referred to it is of the invention can
Can Utopian embodiment and intermediate structure schematic diagram and/or cross sectional view embodiment is described.In specification and attached
In figure, identical label indicates identical element throughout the specification.
Figure 1A and Figure 1B is schematically shown without correction mask and with the beam homogenization device of correction mask 10
100 embodiment.
In detail in this figure, beam homogenization device 100 includes the lens array 11 for being configured to receive incident beam B0.Incident beam B0
The incipient beam of light profile I0 being homogenized with initial light intensity changes delta I0.Lens array 11 is formed by multiple lenslet 11a,
Lenslet 11a is arranged according to the lens grid layout L across the region of incipient beam of light profile I0.Each lenslet 11a is arranged in
In corresponding optical path Pa, to project the parts of images Ia of the respective sub-areas of incipient beam of light profile I0 at illumination plane 14.It is more
A parts of images Ia is projected to the overlapping at illumination plane 14 and forms the first of incipient beam of light profile I0 at illumination plane 14
The homogenization that begins beam profile I1.By the overlapping of the parts of images Ia, initial uniform beam profile I1 is relative to incident light
Initial light intensity changes delta I0 in the incipient beam of light profile I0 of beam B0 has the intensity variation Δ I1 initially reduced.
As shown in Figure 1B, beam homogenization device 100 preferably includes correction mask 10, and correction mask 10 is configured to supply into
The incipient beam of light profile I0 ' of shape.The subset of multiple optical path Pa between incident beam B0 and illumination plane 14 at least partly by
Correction mask 10 stops.This provides further homogenization beam profile I2, relative to the first of not mask shown in figure 1A
The homogenization that begins beam profile I1 has the intensity variation Δ I2 further decreased.
As described herein, it is preferred to ground, mask includes according to the matched mask net of lens grid layout L with lens array 11
Lattice are laid out multiple sub- mask 10a of M arrangement.Mask grid layout M is aligned with lens grid layout L.Every sub- mask 10a design
There is specific sub- mask pattern, to shape the corresponding sub-district across specific one lenslet 11a of S incipient beam of light profile I0
Domain.
In one embodiment, every sub- mask 10a includes the edge being aligned with the edge of corresponding lenslet 11a, with
Individually a part of shaped beam in the corresponding optical path Pa of corresponding lenslet 11a.Preferably, lenslet 11a be it is spherical or
Oval-shaped lenses.For example, lenslet 11a is lenticule, size is between 100 microns to 3,000 microns, preferably in a milli
Rice is between three millimeters.In another or further embodiment, the grid of lenslet 11a is two-dimensional grid, plurality of
The sequence of lenslet is upwardly extended in either grid.Preferably, the height of sub- mask 10a and width is suitable for and lenslet
The height and width of 11a matches (for example, identical).
In the embodiment shown, the optimum position in the optical path before lens array 11 is arranged in correction mask 10.
In principle, mask can be located elsewhere, such as direct face or other positions after the lens.Correction mask 10 preferably to the greatest extent may be used
It can be corresponding close to (for example, less than one centimetre, less than half centimetre or in the distance of even more small (being, for example, less than one millimeter))
Lens array is placed, to avoid diffraction effect.In some embodiments, correction mask 10 setting collimated light beam be especially into
In irradiating light beam B0.For example, correction mask 10 is set at or near the object plane being imaged at illumination plane 14.In other words,
Illumination plane 14 can be the conjugate planes of the plane of location mask.In one embodiment, correction mask 10 crosses over lens
The whole region of array 11.
In some embodiments, beam homogenization device 100 is a part with the illuminator system of lens 11,12,13.
As the substituted or supplemented of lens, curved mirror (not shown) can be used also to shape and/or projecting beam.In principle, mask
10 are also possible to reflection mask rather than transmission mask.Some optical components also can integrate together, for example, mask can be with
Lens array integrates.For example, mask can be deposited on transmission lens or mirror lens (or mirror) array.
In the embodiment shown, beam homogenization device 100 includes two lens arrays 11,12.In some alternative configurations
In may not be needed second array.In the present embodiment, the coke that the first lens array 11 is arranged in the second lens array 12 is put down
On face.Further show that beam homogenization device 100 may include lens 13, such as so-called Fourier in this embodiment
Lens.For example, the first focal plane of fourier transform lens 13 is arranged in the second lens array 12.For example, illumination plane 14 is arranged
In the second focal plane of fourier lense 13.The combined effect of projection system 11,12,13 is projected at illumination plane 14
Even light beam.Uniform beam is formed and the projection of the different piece to incident beam B0 is overlapped.
In some embodiments, beam homogenization device 100 is a part of larger imaging system (not shown).For example, to
The pattern of imaging is placed at or near illumination plane 14 to be uniformly lighted, for example, having the mask of circuit pattern.Example
Such as, beam homogenization device 100 as described herein can be applied in lithography system.
Fig. 2A and Fig. 2 B respectively illustrates the X-Y scheme and profile diagram of the intensity distribution of initial uniform beam profile I1.It can
To observe, initial uniform beam profile I1 be it is relatively uniform, for example, model of the intensity between 3.88 and 4.00 (a.u)
In enclosing.For example, this initial uniform beam profile I1 can be by using the homogenizer shown in figure 1A without correction mask
100 pairs of initial Gaussian beam profiles are homogenized to obtain.
Fig. 3 A and Fig. 3 B respectively illustrate the X-Y scheme and profile diagram of the intensity distribution of incipient beam of light profile I0.Such as Fig. 3 A institute
Show, the specific lenslet of each of layout L generates small contribution in overall strength pattern, the incident light in the contribution and lenslet
The mean intensity of beam is proportional.
Fig. 4 A and Fig. 4 B respectively illustrate the first embodiment party of correction mask 10 and corresponding sub- mask pattern 10a to 10d
Formula.
In the first embodiment, correction mask 10 has the centre bore with transparent material (such as glass).Correspondingly, it covers
Lay wire lattice layout M is formed by multiple sub- mask patterns, and the sub- mask pattern includes the different location being distributed on transparent material
The opaque material at place.For example, mask 10 (being written by laser or electron beam) is fabricated to common lay photoetching mask plate and quilt
Anti-reflection coating is coated to minimize transmission loss.
In one embodiment, sub- mask 10a has the respective circular edge for limiting resistance light blocking region.For example, son is covered
The center of the circular edge of mould 10a is aligned with the center of corresponding lenslet.In another or further embodiment, sub- mask
The circular edge of 10c limits the interior zone 10ci that light passes through and surrounds the perimeter of the blocking light of interior zone 10ci
10co.This can be used for correcting the relatively low luminous intensity and/or initial uniform at the center of initial uniform beam profile I1
Change the relatively high luminous intensity (comparing Fig. 2 and Fig. 5) of the outer edge of beam profile I1.
In the present embodiment, each of sub- mask 10a to 10d is respectively provided with symmetrical sub- mask pattern.For example, sub
Mask pattern is symmetrical in 2 orthogonal directions.For example, sub- mask pattern can be point symmetry.In one embodiment,
Correction mask 10 includes the set of sub- mask 10a, 10b, 10c, 10d of two, three, four, or more different pattern.
For example, correction mask 10 includes that repetition of each pattern in sub- mask 10a, 10b, 10c, 10d of one group of different pattern goes out
It is existing.
Fig. 5 A and Fig. 5 B respectively illustrate using the correction mask 10 of (Fig. 4 A) according to first embodiment obtain into one
The X-Y scheme and profile diagram of the calculating intensity distribution of step homogenization beam profile I2.
As shown, the effect of sub- mask can show as the overlapping intensity profile that acceptor mask 10a to 10d influences respectively
Ia to Id.For example, interior zone Ia+Ib+Ic+Id, which can correspond to each of sub- mask 10a to 10d, passes through the original strong of light
Degree.It can correspond to quilt mask 10d around the annular region Ia+Ib+Ic of the interior zone to stop still to pass through mask 10a extremely
The light of 10c.Ring Ia+Ib can correspond to the light that quilt mask 10c and 10d stop but pass through sub- mask 10a and 10b.Ring Ia
It can correspond to the light stopped by all sub- mask 10b to 10d in addition to sub- mask 10a.Certainly, between different annular regions
Edge can for example be further smoothed by using further different sub- mask.
As shown, with the initial uniform beam profile I1 of Fig. 2 B initially reduce intensity variation (Δ I1) (for
It is shown in dotted line compared with Fig. 5 B) it compares, further homogenizing beam profile I2, there is the luminous intensity further decreased to become
Change (Δ I2).
As non-limiting example shown in Fig. 2 to Fig. 5, it may be considered that the theoretical Relative Transmission of projection stepper prototype
It is corrected, wherein desired illumination device unit (based on imaging lenslet array homogenizer) and the combination of projection lens can produce just
Beginning inhomogeneities (Imax-Imin)/(Imax+Imin) ≈ 1.5%.Profile I1 in referring to fig. 2.In present exemplary, such as scheme
Shown in 3A, there are 35 × 23 rectangle lenslets having a size of 1.636mm × 2.5mm.Incipient beam of light I0 has 1/e2Diameter is
The Gaussian structures of 44mm.Light beam power distribution on lenslet is as shown in Figure 3A.
In order to further correct 1.5% inhomogeneities, mask is applied to multiple lenslets, these lenslets cover in total
The light beam power of ± 1.5%=3%.8 lenslets are divided into, each lenslet assigns to~0.375% power.Based on this
Standard selects eight lenslets being arranged symmetrically shown in Fig. 3 A.For example, in order to avoid the change of the telecentricity due to caused by apodization
Change and minimizes the influence of the intensity gradient on lenslet region, it can (the different son of a total of four be covered by identical mask
Mould) it is applied to a pair of symmetrically positioned lenslet.The second approximation of opposite illumination pattern I0 is divided into four ranks.Then such as
Apodization mask is calculated shown in Fig. 4.Expected correction result Icorr (x, y) is as shown in figure 5, be for example calculated as
Wherein Irel(x, y) is the relative illumination to be corrected, Pi,jIt is fraction power, Ti,j(x, y) is that have index (i, j)
Lenslet in transmission profile.The obtained inhomogeneities of this method is 0.38%, i.e., relative to 1.5% it is initial uneven
Property is greatly improved.
Fig. 6 A and Fig. 6 B respectively illustrate the second embodiment of correction mask and its corresponding sub- mask pattern.
In this second embodiment, correction mask 10 has the centre bore of not carrying material.Correspondingly, mask grid is laid out M
It is formed by multiple sub- mask patterns of the edge E setting only around centre bore.
As shown, each of sub- mask pattern 10a to 10d has in the mask grid layout M of correction mask 10
Fixed position.For example, wherein correction mask 10 includes the multiple sub- masks symmetrical around the center C of mask grid layout M
10a.Preferably, as shown, they according to point symmetry distribution be arranged, such as wherein the first sub- mask pattern 10b1 and with
The sub- mask pattern 10b2 of the second of center C opposite half rotation is identical, with to for example symmetrical Gaussian beam transverse shift not
It is sensitive.In general, sub- mask profile can be it is non-rotationally-symmetric or completely it is asymmetrical.
Fig. 7 A and Fig. 7 B illustrate how to realize there is disconnection in the edge of the correction mask according to second embodiment
The sub- mask pattern of partial expection.
In one embodiment, the symmetrical sub- mask pattern 10a or 10e of the expection including two or more breaking parts
It is divided into sub-pattern (such as 10a1,10a2 or 10a1 ', 10a2 ' or 10e1,10e2).Each sub-pattern is by two or more
The subset of a breaking part is formed, to allow sub-pattern to be attached to the edge of the not centre bore of carrying material.As shown, for example existing
In Fig. 6, this allows to form pattern in the edge of mask, and otherwise the mask will have the breaking part swum in the air.
In some embodiments, sub-pattern 10a1,10a2 forms two half-unit, they constitute expected sub- mask artwork together
Case 10a.For example, the half of corresponding sub-pattern forms the corresponding half of expected sub- mask pattern 10a.Corresponding sub-pattern the other half
It can be without material (at the top of Fig. 7 A).Alternatively, corresponding sub-pattern the other half be filled with opaque material, that is, be intended for hindering
Keep off the light (bottom Fig. 7 A, Fig. 7 B) of incident beam.
In the embodiment of Fig. 7 B, the circular edge of sub- mask 10c limits the interior zone 10ei for stopping light and encirclement
The perimeter 10eo of interior zone 10ei, wherein light passes through perimeter 10eo with the center to initial uniform beam profile
The relatively low luminous intensity of the outer edge of the relatively high luminous intensity and/or initial uniform beam profile at place is corrected.
For power efficiency, it is preferred for keeping remaining one semi-open (open).However, its is made opaque can to improve mask
The connection of rigidity and offer and adjacent lenslet mask, this allows to cover more lenslets.Some patterns, which are benefited from, to be added
Add opaque section to keep other floating parts of sub- mask.For example, opaque half portion shown on the right side of Fig. 7 B can be kept
Interior zone 10ei.This graph show that preferred embodiment, neutron mask is symmetrical and symmetrically separates.In general,
Asymmetric pattern can be used, asymmetric pattern is also segmented into non-symmetrical portion.
Fig. 8 A and Fig. 8 B are respectively illustrated using the initial uniform light obtained according to the correction mask of second embodiment
The measurement intensity distribution of beam profile I1 and further homogenization beam profile I2.
Other than the fact that the strength range in image I2 reduces relative to I1, it will be appreciated that further homogenize light beam
Profile I2 shows the edge I2E that can correspond to the edge of sub- mask 10a, 10b, 10c, 10d.This can provide sub- mask phase
For the evidence of lens array being correctly aligned.Certainly, it by the sub- mask of difference of selection wider range, can further smooth
These edges.
Manufacture mask 10 is cut by laser in design according to figure 6, and mask 10 is aligned to the first microlens array
50 microns of precision, and tested in homogenizer setting as shown in Figure 1.Intensity profile in Fig. 8 analysis shows that not
Uniformity is reduced to 1.94% in apodization mask as described herein from 2.97% in the configuration with round hole.
The some aspects of the disclosure can provide such as Fig. 4 or correction mask shown in fig. 6 10.For example, correction mask 10
It can be used for improving the homogenizer 100 based on lens array 10 as shown in Figure 1.This can provide further homogenization light beam wheel
Wide I2, the initial uniform beam profile I1 relative to homogenizer 100 without correction mask 10, which has, to be further decreased
Intensity variation Δ I2.For example, comparing Fig. 2 and Fig. 5.In order to realize this homogenization, it is preferable that mask includes basis and lens
Multiple sub- mask 10a of the matched mask grid layout M arrangement of the lens grid layout L of array 11.In use, mask grid
Layout M will be aligned with lens grid layout L.Correspondingly, each of sub- mask 10a design have specific sub- mask pattern with
Shape the respective sub-areas by specific one lenslet 11a of S incipient beam of light profile I0.In another or further implementation
In mode, correction mask 10 is apodization mask, such as the aperture mask with pattern edge.
Other or further aspect can be related to manufacturing the side of the correction mask 10 for improving beam homogenization device 100
Method.For example, homogenizer 100 includes being configured to receive the incident beam B0 with incipient beam of light profile I0 as shown in figure (1A+1B)
Lens array 11, incipient beam of light profile I0 have incipient beam of light Strength Changes Δ I0 to be homogenized.In this embodiment,
Lens array 11 is formed by multiple lenslet 11a, and lenslet 11a is according to the lens grid across the region of incipient beam of light profile I0
Layout L arrangement.
As shown in Figure 1, some embodiments may include configuring correction mask 10 to provide the incipient beam of light profile of forming
I0 ', wherein the subset of multiple optical path Pa between incident beam B0 and illumination plane 14 is at least partly corrected the resistance of mask 10
Gear further homogenizes beam profile I2 to provide, and beam profile I2 has relative to initial uniform beam profile I1 into one
Walk reduced intensity variation Δ I2.Preferably, mask includes multiple sub- mask 10a, multiple sub- mask 10a according to lens array
The matched mask grid layout M arrangement of the lens grid layout L of column 11, as described herein.
As shown in Fig. 2, some embodiments may include the beam homogenization device 100 without correction mask 10 illumination it is flat
Initial uniform beam profile I1 is measured at face 14.Alternately or in addition, embodiment may include by adding such as Fig. 4
Or multiple sub- mask 10a, 10b, 10c, 10d shown in fig. 6 design correction mask 10.For example, every sub- mask can have
Edge, the edge are shaped as the subregion corresponding to corresponding lenslet 11a for being partially blocked by incipient beam of light profile I0.Accordingly
The part that is blocked on ground, subregion is higher than average luminous intensity I1H corresponding to the having for initial uniform beam profile I1 of measurement
Part (referring to fig. 2).
As shown in figure 3, some embodiments may include the measurement incident beam at the position that will place correction mask 10
The incipient beam of light profile I0 of B0.For example, the relative contribution of the light of the different subregions of mask grid layout can be calculated through
Irel is how many.
As illustrated in fig. 4 or 6, some embodiments may include the mask grid layout M for generating correction mask 10, correction
Mask 10 has difference sub- mask pattern 10a, 10b, 10c, 10d of the different subregions of coverage mask grid layout M；
As shown in figure 5, some embodiments may include the difference of the different subregions based on coverage mask grid layout M
Sub- mask pattern 10a, 10b, 10c, 10d and its relative contribution Irel calculate correction profile, wherein correction profile Icorr is excellent
Change to provide further homogenization beam profile I2.For example, optimization correction profile is to provide the intensity variation further decreased
Δ I2 may include changing the edge shape of different sub- mask patterns, the quantity of used sub- mask pattern and/or sub- mask
Pattern relative to the incipient beam of light profile of measurement position it is one or more.For example, as shown in Figure 5 B, changing edge shape
Respective diameters Da, Db including changing the sub- mask edge in one or more difference sub- mask pattern 10a, 10b.
For clear and concise description purpose, a part of identical or independent embodiment is described feature as herein,
It is to be appreciated, however, that the scope of the present invention may include the combined embodiment with all or some described feature.Example
Such as, though it is shown that the embodiment of sub- mask pattern, but those skilled in the art are contemplated that and realize class with the disclosure
Like the alternative of function and the benefit of result.E.g., including the optical component of lens and mask can combine or be divided into one
Or more substitutions of elements.Certain advantages are provided with the various elements of the embodiment shown as discussed, are such as improved uniform
Property.The embodiment (wherein correction mask is binary mask) shown at present can have better than the mask with gray scale optical filter
The advantages of, which is that binary mask is easily fabricated, only has covering transmission window or surrounds a type of (complete of hole
Opaque region entirely).It is to be understood, of course, that any one of above embodiment or process can with it is one or more its
His embodiment or process combination, with find and matched design and advantage in terms of even further improve is provided.It will be understood that
The disclosure provides specific advantages for photoetching, and is typically applied to any application of expectation uniform beam profile.
Although referring to the specific exemplary embodiments of system and method be described in particular detail with this system and
Method, it should also be appreciated that those of ordinary skill in the art can design without departing from the scope of the disclosure
Many modifications and replacement embodiment.For example, wherein device or system is disclosed as arranging and/or be configured to execute ad hoc approach
Or the embodiment of function inherently discloses such method or function and/or discloses embodiment party with other of method or system
The combination of formula.In addition, in the conceived case, the embodiment of method is considered combining other of method or system disclosed real
Apply the embodiment that mode inherently discloses them in corresponding hardware.Furthermore, it is possible to be presented as such as non-transitory computer
The method of program instruction on readable storage medium storing program for executing is considered as such embodiment and inherently discloses.
Finally, discussed above be intended only to illustrate this system and/or method, and it is not necessarily to be construed as limiting appended claims
It is formed on any particular implementation or embodiment group.Correspondingly, the description and the appended drawings should illustratively be treated, without
It is intended to limit scope of the appended claims.When explaining appended claims, it should be appreciated that word " comprising " does not exclude the presence of
Other elements or movement other than giving and those of being listed in claim；Word "a" or "an" before element is not
There are multiple such elements for exclusion；Any reference marker in claim does not limit its scope；Several " components " can be used
The structure or function of identical or different project or implementation indicates；Unless stated otherwise, otherwise any disclosed dress
Other part can be combined or be divided by setting or part thereof.Certain measures are described in mutually different claim
The only true combination for being not offered as these measures cannot be used for benefiting.Particularly, all working combination of claim is recognized
To be inherently disclosed.
Claims (15)
1. a kind of beam homogenization device (100), comprising:
Lens array (11) is configured to receive the incident beam (B0) with incipient beam of light profile (I0), the incipient beam of light wheel
Wide (I0) there is initial light intensity to be homogenized to change (Δ I0), wherein the lens array (11) is by multiple lenslets
(11a) is formed, and the multiple lenslet (11a) is laid out according to the lens grid across the region of the incipient beam of light profile (I0)
(L) it arranges, wherein each lenslet (11a) is arranged in corresponding optical path (Pa) described in the projection at illumination plane (14)
The parts of images (Ia) of the respective sub-areas of incipient beam of light profile (I0), wherein multiple parts of images (Ia) are projected to
It is overlapped at the illumination plane (14) to form the initial equal of the incipient beam of light profile (I0) at the illumination plane (14)
Homogenize beam profile (I1), wherein by the overlapping of the parts of images (Ia), initial uniform beam profile (I1) tool
There is the initial light intensity in the incipient beam of light profile (I0) relative to the incident beam (B0) to change (Δ I0) just
Begin reduced intensity variation (Δ I1)；And
Correction mask (10) is configured to provide for the incipient beam of light profile (I0 ') of forming, wherein the incident beam (B0) and institute
The subset for stating the multiple optical path (Pa) between illumination plane (14) is at least partly stopped by the correction mask (10), with
Further homogenization beam profile (I2) is provided, the further homogenization beam profile (I2) is relative to the initial uniform
Beam profile (I1) has the intensity variation (Δ I2) further decreased；
Wherein, the mask includes being laid out (L) matched mask net according to the lens grid of the lens array (11)
Lattice are laid out multiple sub- masks (10a) of (M) arrangement, wherein the mask grid layout (M) and lens grid layout (L)
Alignment, wherein the design of each of described sub- mask (10a) has specific sub- mask pattern, with forming (S) initial light
Beam profile (I0) by specific one respective sub-areas in the lenslet (11a),
It is characterized in that, the sub- mask pattern of different sub- masks (10a, 10b, 10c, 10d) includes and corresponding lenslet (11a)
The different circular edges of center alignment, wherein the difference rounded edges are at being shaped differently the incipient beam of light profile
(I0) the respective sub-areas by different lenslets.
2. beam homogenization device (100) according to claim 1, wherein the sub- mask of difference (10a, 10b, 10c, 10d)
The different circular edges be projected as different annular regions (Ia, Ib, Ic, Id), thus in the further homogenization
The intensity variation (Δ I2) further decreased described in being provided in beam profile (I2).
3. beam homogenization device (100) according to claim 1 or 2, wherein the circular edges of the sub- mask (10c)
Edge limits the circular inner zone (10ci) by light and surrounds the perimeter (10co) of the circular inner zone (10ci),
In the perimeter (10co), light is blocked relatively low at the center to the initial uniform beam profile (I1)
Luminous intensity and/or the relatively high luminous intensity of outer edge of the initial uniform beam profile (I1) be corrected.
4. beam homogenization device (100) according to claim 1 or 2, wherein the circular edges of the sub- mask (10c)
Edge limits the circular inner zone (10ei) for stopping light and surrounds the perimeter (10eo) of the circular inner zone (10ei),
Light is by the perimeter (10eo), with the relatively high luminous intensity at the center to the initial uniform beam profile
And/or the relatively low luminous intensity of the outer edge of the initial uniform beam profile is corrected.
5. beam homogenization device (100) according to any one of the preceding claims, wherein the sub- mask of difference (10a,
10b, 10c, 10d) overlapping intensity profile (Ia, Ib, Ic, Id) form the further homogenization beam profile (I2), wherein
The intensity profile (Ia) of first sub- mask (10a) and the intensity profile (Ib) of the second sub- mask (10b) are completely overlapped.
6. beam homogenization device (100) according to any one of the preceding claims, wherein the correction mask (10) includes
Multiple sub- masks (10a), at least some subsets of the sub- mask have different edge shape or edge radius and described
At least some subsets edge shape having the same and edge radius of sub- mask, wherein edge shape having the same and side
The member of the subset of the sub- mask of edge radius is symmetrical around the center (C) of mask grid layout (M), it is therefore preferred to have
Point symmetry distribution.
7. beam homogenization device (100) according to any one of claim 1 to 6, wherein the correction mask (10) has
Centre bore with transparent material, wherein the mask grid layout (M) is formed by multiple sub- mask patterns, and the multiple son is covered
Mould pattern includes the opaque material being distributed at the different location of the transparent material.
8. beam homogenization device (100) according to any one of claim 1 to 6, wherein the correction mask (10) has
The not centre bore of carrying material, so as to be laid out the described of the lenslet (11a) of the central hole of (L) by the lens grid
Incipient beam of light profile (I0) is not influenced by the correction mask, wherein the mask grid layout (M) is only by surrounding in described
Multiple sub- mask patterns of edge (E) setting in heart hole are formed.
9. a kind of lithography system, including beam homogenization device according to any one of the preceding claims (100).
10. a kind of correction mask (10), for improving the beam homogenization device (100) based on lens array (10), to provide into one
Step homogenization beam profile (I2), the further homogenization beam profile (I2) have relative to without the correction mask
(10) intensity variation (Δ I2) that the initial uniform beam profile (I1) of the homogenizer (100) further decreases,
Wherein, the mask includes being laid out (L) matched mask grid cloth according to the lens grid of the lens array (11)
Multiple sub- masks (10a) of office (M) arrangement, wherein the mask grid layout (M) is laid out (L) with the lens grid and is aligned,
Wherein, the design of each of described sub- mask (10a) has specific sub- mask pattern, with forming (S) the incipient beam of light wheel
Wide (I0's) passes through specific one respective sub-areas in the lenslet (11a)；
It is characterized in that, the sub- mask pattern of different sub- masks (10a, 10b, 10c, 10d) includes and corresponding lenslet (11a)
The different circular edges of center alignment, wherein the difference rounded edges are at being shaped differently the incipient beam of light profile
(I0) the respective sub-areas by different lenslets.
11. a kind of method of manufacture for improving the correction mask (10) of beam homogenization device (100), the beam homogenization device
(100) include:
Lens array (11) is configured to receive the incident beam (B0) with incipient beam of light profile (I0), the incipient beam of light wheel
Wide (I0) there is initial light intensity to be homogenized to change (Δ I0), wherein the lens array (11) is by multiple lenslets
(11a) is formed, and the multiple lenslet (11a) is laid out according to the lens grid across the region of the incipient beam of light profile (I0)
(L) it arranges, wherein each lenslet (11a) is arranged in corresponding optical path (Pa) described in the projection at illumination plane (14)
The parts of images (Ia) of the respective sub-areas of incipient beam of light profile (I0), wherein multiple parts of images (Ia) are projected to
It is overlapped at the illumination plane (14), to form the initial of the incipient beam of light profile (I0) at the illumination plane (14)
It homogenizes beam profile (I1), wherein by the overlapping of the parts of images (Ia), the initial uniform beam profile (I1)
Change (Δ I0) with the initial light intensity in the incipient beam of light profile (I0) relative to the incident beam (B0)
The intensity variation (Δ I1) initially reduced；Wherein, which comprises
The correction mask (10) is configured to provide the incipient beam of light profile (I0 ') of forming, wherein the incident beam (B0)
The subset of the multiple optical path (Pa) between the illumination plane (14) is at least partly hindered by the correction mask (10)
Gear, to provide further homogenization beam profile (I2), the further homogenization beam profile (I2) is relative to described initial
Homogenization beam profile (I1) has the intensity variation (Δ I2) further decreased；
Wherein, the mask includes being laid out (L) matched mask net according to the lens grid of the lens array (11)
Lattice are laid out multiple sub- masks (10a) of (M) arrangement, wherein the mask grid layout (M) and lens grid layout (L)
Alignment, wherein the design of each of described sub- mask (10a) has specific sub- mask pattern, with forming (S) initial light
Beam profile (I0) passes through specific one respective sub-areas in the lenslet (11a)；
It is characterized in that, the sub- mask pattern of different sub- masks (10a, 10b, 10c, 10d) includes and corresponding lenslet (11a)
The different circular edges of center alignment, wherein the difference rounded edges are at being shaped differently the incipient beam of light profile
(I0) the respective sub-areas by different lenslets.
12. according to the method for claim 11, wherein the described method includes:
It is measured at the illumination plane (14) without the beam homogenization device (100) of the correction mask (10) initial
It homogenizes beam profile (I1)；And
It is designed the correction mask (10) by adding multiple sub- masks (10a, 10b, 10c, 10d), every sub- mask
(10a) has an edge, the edge shaping be partially blocked by incipient beam of light profile (I0) corresponding to corresponding lenslet (11a)
Subregion, wherein the subregion be blocked part correspond to measured initial uniform beam profile (I1) tool
There is the part higher than average luminous intensity (I1H).
13. method according to claim 11 or 12, wherein the described method includes:
The incipient beam of light profile of the incident beam (B0) is measured at the position that will place the correction mask (10)
(I0)；
Calculate the relative contribution (Irel) of the light of the different subregions by mask grid layout (M)；
Generate there are the different subregions for covering mask grid layout (M) the sub- mask pattern of difference (10a, 10b, 10c,
The mask grid of correction mask (10) 10d) is laid out (M)；
Based on the different subregions for covering mask grid layout (M) the sub- mask pattern of difference (10a, 10b, 10c,
10d) and its relative contribution (Irel) calculates correction profile (Icorr), wherein the optimization correction profile (Icorr) to be to mention
For further homogenizing beam profile (I2).
14. method described in any one of 1 to 13 according to claim 1, wherein the optimization correction profile (Icorr) is to mention
Include changing one of the following or more for the intensity variation (Δ I2) further decreased:
The edge shape of the sub- mask pattern of difference (10a, 10b, 10c, 10d)；
Quantity in each of the sub- mask pattern used；And/or
Position of the sub- mask pattern relative to measured incipient beam of light profile (I0).
15. a kind of non-transitory computer-readable medium with software instruction, the software instruction make computer when being executed
Execute method described in any one of 1-14 according to claim 1.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2017493A NL2017493B1 (en) | 2016-09-19 | 2016-09-19 | Optical beam homogenizer based on a lens array |
| NL2017493 | 2016-09-19 | ||
| PCT/NL2017/050612 WO2018052298A1 (en) | 2016-09-19 | 2017-09-18 | Optical beam homogenizer based on a lens array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110214291A true CN110214291A (en) | 2019-09-06 |
| CN110214291B CN110214291B (en) | 2022-06-10 |
Family
ID=57583408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780069455.0A Active CN110214291B (en) | 2016-09-19 | 2017-09-18 | Light beam homogenizer based on lens array |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11042095B2 (en) |
| KR (1) | KR20190099192A (en) |
| CN (1) | CN110214291B (en) |
| NL (1) | NL2017493B1 (en) |
| TW (1) | TWI732938B (en) |
| WO (1) | WO2018052298A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111399356A (en) * | 2020-05-15 | 2020-07-10 | 北京航空航天大学 | Color holographic display system with low speckle noise |
| CN113924522A (en) * | 2019-03-12 | 2022-01-11 | 相干激光系统有限公司 | Device for forming a uniform intensity distribution with lighter or darker edges |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200004013A1 (en) * | 2018-06-27 | 2020-01-02 | Corning Incorporated | Light homogenizing elements with corrective features |
| CN113467095B (en) * | 2021-06-08 | 2023-06-30 | 西安交通大学 | Non-imaging type laser homogenizing system and manufacturing method of homogenizing element |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000011706A1 (en) * | 1998-08-18 | 2000-03-02 | Nikon Corporation | Illuminator and projection exposure apparatus |
| CN1247992A (en) * | 1998-09-14 | 2000-03-22 | 富士通株式会社 | Luminous intensity distribution converter and optical data-storage system |
| CN1543578A (en) * | 2001-08-17 | 2004-11-03 | ����-�������п�ר����������˾���� | Arrangement and device for optical beam homogenization |
| WO2004112107A1 (en) * | 2003-06-16 | 2004-12-23 | Nikon Corporation | Lighting optical device, exposure system and exposure method |
| CN1666153A (en) * | 2002-07-08 | 2005-09-07 | 卡尔蔡司Smt股份有限公司 | Optical device comprising an light source |
| WO2006074812A2 (en) * | 2005-01-14 | 2006-07-20 | Carl Zeiss Smt Ag | Illumination sytsem for a microlithographic projection exposure apparatus |
| CN101221374A (en) * | 2008-01-25 | 2008-07-16 | 上海微电子装备有限公司 | Device for correcting illumination homogeneity |
| CN101796460A (en) * | 2007-08-30 | 2010-08-04 | 卡尔蔡司Smt股份公司 | The illuminator of mask is used in the microlithographic projection exposure apparatus to throw light on |
| CN101807009A (en) * | 2010-03-15 | 2010-08-18 | 上海微电子装备有限公司 | Illumination uniformity compensating device and lithography machine provided therewith |
| CN101949518A (en) * | 2010-09-29 | 2011-01-19 | 上海铭源光源发展有限公司 | Manufacturing method for fly lens structure |
| WO2011039261A2 (en) * | 2009-09-30 | 2011-04-07 | Carl Zeiss Smt Gmbh | Illumination system for microlithography |
| CN102023389A (en) * | 2009-09-16 | 2011-04-20 | 中国科学院微电子研究所 | Array partial annulus photon sieve dodging device and manufacturing method thereof |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6282027B1 (en) * | 1999-03-26 | 2001-08-28 | Vari-Lite, Inc. | Zoomable beamspreader with matched optical surfaces for non-imaging illumination applications |
| GB0019454D0 (en) * | 2000-08-09 | 2000-09-27 | Stevens Brian T | Laser system |
| DE102004020250A1 (en) * | 2004-04-26 | 2005-11-10 | Hentze-Lissotschenko Patentverwaltungs Gmbh & Co. Kg | Apparatus and method for optical beam homogenization |
| US7428039B2 (en) | 2005-11-17 | 2008-09-23 | Coherent, Inc. | Method and apparatus for providing uniform illumination of a mask in laser projection systems |
| US7532403B2 (en) * | 2006-02-06 | 2009-05-12 | Asml Holding N.V. | Optical system for transforming numerical aperture |
| JP2008191469A (en) * | 2007-02-06 | 2008-08-21 | Nikon Corp | Manufacturing method of micro fly eye, micro fly eye, and exposure device |
| JP2009043933A (en) * | 2007-08-08 | 2009-02-26 | Canon Inc | Exposure system, adjusting method, exposure method, and method for manufacturing device |
| DE102008011501A1 (en) * | 2008-02-25 | 2009-08-27 | Carl Zeiss Smt Ag | Method for operating an illumination system of a microlithographic projection exposure apparatus |
| CN101290398A (en) * | 2008-06-02 | 2008-10-22 | 深圳市世纪人无线通讯设备有限公司 | Method for accomplishing light beam uniformization and optical device |
| WO2013061858A1 (en) * | 2011-10-24 | 2013-05-02 | 株式会社ニコン | Illumination optical assembly, exposure apparatus, and device manufacturing method |
| DE102012018303A1 (en) * | 2012-09-14 | 2014-03-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Measuring device for luminescence measurement |
| CN103399463B (en) * | 2013-07-19 | 2015-07-29 | 中国科学院上海光学精密机械研究所 | Projection mask aligner's lighting device and using method |
-
2016
- 2016-09-19 NL NL2017493A patent/NL2017493B1/en active
-
2017
- 2017-09-18 KR KR1020197011429A patent/KR20190099192A/en not_active Application Discontinuation
- 2017-09-18 CN CN201780069455.0A patent/CN110214291B/en active Active
- 2017-09-18 WO PCT/NL2017/050612 patent/WO2018052298A1/en active Application Filing
- 2017-09-18 TW TW106131950A patent/TWI732938B/en active
- 2017-09-18 US US16/334,347 patent/US11042095B2/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000011706A1 (en) * | 1998-08-18 | 2000-03-02 | Nikon Corporation | Illuminator and projection exposure apparatus |
| CN1247992A (en) * | 1998-09-14 | 2000-03-22 | 富士通株式会社 | Luminous intensity distribution converter and optical data-storage system |
| CN1543578A (en) * | 2001-08-17 | 2004-11-03 | ����-�������п�ר����������˾���� | Arrangement and device for optical beam homogenization |
| CN1666153A (en) * | 2002-07-08 | 2005-09-07 | 卡尔蔡司Smt股份有限公司 | Optical device comprising an light source |
| WO2004112107A1 (en) * | 2003-06-16 | 2004-12-23 | Nikon Corporation | Lighting optical device, exposure system and exposure method |
| WO2006074812A2 (en) * | 2005-01-14 | 2006-07-20 | Carl Zeiss Smt Ag | Illumination sytsem for a microlithographic projection exposure apparatus |
| CN101796460A (en) * | 2007-08-30 | 2010-08-04 | 卡尔蔡司Smt股份公司 | The illuminator of mask is used in the microlithographic projection exposure apparatus to throw light on |
| CN101221374A (en) * | 2008-01-25 | 2008-07-16 | 上海微电子装备有限公司 | Device for correcting illumination homogeneity |
| CN102023389A (en) * | 2009-09-16 | 2011-04-20 | 中国科学院微电子研究所 | Array partial annulus photon sieve dodging device and manufacturing method thereof |
| WO2011039261A2 (en) * | 2009-09-30 | 2011-04-07 | Carl Zeiss Smt Gmbh | Illumination system for microlithography |
| CN101807009A (en) * | 2010-03-15 | 2010-08-18 | 上海微电子装备有限公司 | Illumination uniformity compensating device and lithography machine provided therewith |
| CN101949518A (en) * | 2010-09-29 | 2011-01-19 | 上海铭源光源发展有限公司 | Manufacturing method for fly lens structure |
Non-Patent Citations (2)
| Title |
|---|
| VIJAYRAMYAKOLLI 等: "Residual-layer-free 3D nanoimprint using hybrid soft templates", 《MICROELECTRONIC ENGINEERING》 * |
| 赵阳 等: "提高深紫外光刻照明系统扩束单元光束", 《光学学报》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113924522A (en) * | 2019-03-12 | 2022-01-11 | 相干激光系统有限公司 | Device for forming a uniform intensity distribution with lighter or darker edges |
| CN113924522B (en) * | 2019-03-12 | 2024-08-02 | 相干激光系统有限公司 | Apparatus for forming uniform intensity distribution with brighter or darker edges |
| CN111399356A (en) * | 2020-05-15 | 2020-07-10 | 北京航空航天大学 | Color holographic display system with low speckle noise |
| CN111399356B (en) * | 2020-05-15 | 2021-05-07 | 北京航空航天大学 | Color holographic display system with low speckle noise |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201823807A (en) | 2018-07-01 |
| US11042095B2 (en) | 2021-06-22 |
| NL2017493B1 (en) | 2018-03-27 |
| US20200183286A1 (en) | 2020-06-11 |
| CN110214291B (en) | 2022-06-10 |
| WO2018052298A1 (en) | 2018-03-22 |
| KR20190099192A (en) | 2019-08-26 |
| TWI732938B (en) | 2021-07-11 |
| US20210191273A9 (en) | 2021-06-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110214291A (en) | Beam homogenization device based on lens array | |
| CN102122117B (en) | Lithographic apparatus and method | |
| CN105745580B (en) | The lighting system of microlithographic projection exposure apparatus | |
| EP1168083B1 (en) | Line with compensation using spatial variations in partial coherence | |
| KR101407795B1 (en) | Illuminating optical unit and projection exposure apparatus for microlithography | |
| CN103097955B (en) | The illuminator of microlithography projection exposure device | |
| US9025131B2 (en) | Optical beam deflecting element, illumination system including same, and related method | |
| KR101301120B1 (en) | Illumination system, lithographic apparatus and method | |
| TW201702756A (en) | Method of operating a microlithographic projection apparatus | |
| CN103748489B (en) | The manufacture method of patterned retarder, patterned retarder and image display device | |
| CN102804069B (en) | Lithographic apparatus and method | |
| US8697317B2 (en) | Exposure apparatus for forming a reticle and method of forming a reticle using the same | |
| KR102315115B1 (en) | Illumination apparatus and method, exposure apparatus and method, and device manufacturing method | |
| TWI548952B (en) | Microlithographic projection exposure apparatus and method of operating same | |
| TW200307983A (en) | System and method for improving line width control in a lithography device using an illumination system having pre-numerical aperture control | |
| TWI770239B (en) | Exposure device and exposure method | |
| JP2017527855A5 (en) | ||
| JP6855969B2 (en) | Exposure device and exposure method | |
| JP2010040617A (en) | Optical integrator, illumination optical system, exposure apparatus, and device manufacturing method | |
| CN103293876B (en) | Adopt the lithographic equipment of sextupole Exposure mode, logical light unit and photoetching method | |
| WO2018162286A1 (en) | Projection system for a lithography apparatus, and method for operating a lithography apparatus | |
| JP2010027876A (en) | Dimming unit, illumination optical system, exposure apparatus, and device manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |