CN110137225A - OLED display panel and preparation method thereof - Google Patents
OLED display panel and preparation method thereof Download PDFInfo
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- CN110137225A CN110137225A CN201910366798.4A CN201910366798A CN110137225A CN 110137225 A CN110137225 A CN 110137225A CN 201910366798 A CN201910366798 A CN 201910366798A CN 110137225 A CN110137225 A CN 110137225A
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- 238000002360 preparation method Methods 0.000 title claims description 9
- 239000010409 thin film Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 34
- 230000008569 process Effects 0.000 claims abstract description 24
- 230000005661 hydrophobic surface Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 41
- 238000001704 evaporation Methods 0.000 claims description 17
- 239000000243 solution Substances 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 12
- 239000007924 injection Substances 0.000 claims description 12
- 230000005525 hole transport Effects 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 11
- 230000008020 evaporation Effects 0.000 description 7
- 238000007641 inkjet printing Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009194 climbing Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- VQQONBUSTPHTDO-UHFFFAOYSA-N [Sn]=O.[In].[Ag].[Sn]=O.[In] Chemical compound [Sn]=O.[In].[Ag].[Sn]=O.[In] VQQONBUSTPHTDO-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A kind of OLED display panel, including thin-film transistor array base-plate, OLED light-emitting component and pixel defining layer, the pixel defining layer includes main pixel defining layer and sub-pixel definition layer, at least one first opening is offered on the sub-pixel definition layer, at least one OLED light-emitting component and the main pixel defining layer are set in first opening.By increasing by one layer of sub-pixel definition layer containing hydrophobic surface, during preparing white light OLED luminescent device, it is advantageously implemented solution process, and then promote the stock utilization of white light OLED device.
Description
Technical Field
The invention relates to the technical field of display, in particular to an OLED display panel and a preparation method thereof.
Background
An Organic Light Emitting Diode (OLED) is widely used due to its advantages of good self-Light Emitting characteristics, high contrast, high response speed, flexible display, and the like. At present, there are three ways for an OLED display to realize full-color display: (1) the red, green and blue organic luminescent materials are adopted to directly emit light; (2) the white organic light-emitting device is matched with the color filter; (3) the blue light emitting layer is matched with the light color conversion layer.
The white organic light emitting device and the color filter cooperate to emit light, which is a technical route of mass production of the current large-size OLED display, each pixel consists of the white organic light emitting device and the red, green and blue color filters, and white light can obtain three primary colors through the color filters, so that full-color display is realized. The white light-emitting device is vapor-deposited on the substrate by adopting the open mask plate, but the utilization rate of the organic material is low, so that the number of vapor deposition process layers is large and the process is complex in order to ensure the display quality of the vapor-deposited white light-emitting device.
Disclosure of Invention
The invention provides an OLED display panel and a preparation method thereof, and aims to solve the problems that in the existing preparation method of the OLED display panel, a white light-emitting device is prepared by an evaporation method, the utilization rate of organic materials is reduced by adopting the evaporation method, the number of film layers needing evaporation is large, and the process is complicated.
In order to solve the above problems, the technical scheme provided by the invention is as follows:
the present invention provides an OLED display panel including: the OLED display panel comprises a thin film transistor array substrate, a plurality of OLED light-emitting elements arranged on the thin film transistor array substrate and a pixel defining layer arranged on the thin film transistor array substrate; the OLED light-emitting element comprises a first electrode layer, a light-emitting layer and a second electrode layer, wherein the pixel defining layer comprises a main pixel defining layer and a sub-pixel defining layer; the sub-pixel defining layer is provided with at least one first opening, and the at least one OLED light-emitting element and the main pixel defining layer are arranged in the first opening.
In at least one embodiment of the present invention, the main pixel defining layer is formed with a plurality of second openings, and one of the OLED light emitting elements is correspondingly disposed in one of the second openings.
In at least one embodiment of the present invention, a side surface of the sub-pixel defining layer facing away from the thin film transistor array substrate is higher than a side surface of the main pixel defining layer facing away from the thin film transistor array substrate.
In at least one embodiment of the present invention, an inner wall of the first opening of the sub-pixel defining layer has a ramp structure.
In at least one embodiment of the present invention, the sub-pixel defining layer covers a portion of the main pixel defining layer within the first opening.
In at least one embodiment of the present invention, the sub-pixel defining layer is an organic photoresist containing fluorine, and the surface of the sub-pixel defining layer is a hydrophobic surface.
In at least one embodiment of the present invention, the sub-pixel defining layer is formed with a plurality of first openings arranged side by side, and the first electrode layers of the plurality of OLED light emitting elements are arranged in the first openings at intervals.
In at least one embodiment of the present invention, the first opening is a long strip.
The invention also provides a preparation method of the OLED display panel, which comprises the following steps:
step S10, providing a thin film transistor array substrate, and forming a first electrode layer on the thin film transistor array substrate;
step S20, forming a main pixel defining layer on the thin film transistor array substrate, the main pixel defining layer being disposed around the first electrode layer;
step S30, forming a sub-pixel defining layer on the thin film transistor array substrate, the sub-pixel defining layer surrounding the main pixel defining layer;
step S40 is to form a light-emitting layer and a second electrode layer on the first electrode layer.
In at least one embodiment of the present invention, the step S40 includes:
s401, sequentially forming a first hole injection layer, a first hole transport layer and a first light emitting layer on the first electrode layer by using a solution process;
s402, sequentially evaporating a first electronic transmission layer and a conductive intermediate layer on the blue light emitting material layer by using an open mask plate;
s403, sequentially forming a second hole injection layer, a second hole transport layer, an electron blocking layer, a second light emitting layer, a second electron transport layer and a hole blocking layer on the conductive intermediate layer by using a solution process;
and S404, evaporating a second electrode layer on the hole barrier layer by using an open mask plate.
The invention has the beneficial effects that: by adding a sub-pixel defining layer with a hydrophobic surface, the solution process is favorably realized in the process of preparing the white OLED luminescent device, and the material utilization rate of the white OLED device is further improved.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the invention, and it is obvious for a person skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a top view of an OLED display panel according to a first embodiment of the invention;
FIG. 2 is a schematic cross-sectional view A-A' of FIG. 1;
FIG. 3 is a schematic structural diagram of an OLED light-emitting device according to an embodiment of the present invention;
FIG. 4 is a top view of a sub-pixel defining layer according to a first embodiment of the present invention;
FIG. 5 is a top view of a main pixel defining layer according to a first embodiment of the present invention;
FIG. 6 is a top view of a second OLED display panel according to a second embodiment of the present invention;
FIG. 7 is a schematic cross-sectional view of B-B' of FIG. 6;
fig. 8 is a flowchart of a method for manufacturing an OLED display panel according to the present invention.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings that illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], are only referring to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention. In the drawings, elements having similar structures are denoted by the same reference numerals.
Aiming at the problems that the utilization rate of organic materials is reduced and the number of film layers needing evaporation plating is large, so that the process is complex, the conventional preparation method of the OLED display panel is adopted to prepare the white light-emitting device by the evaporation plating method, and the defects can be solved.
Example one
As shown in fig. 1 to 3, the present embodiment provides an OLED display panel 100, which includes a Thin Film Transistor (TFT) array substrate 10, an OLED light emitting device 20 disposed on the TFT array substrate 10, and a pixel defining layer 30 disposed on the TFT array substrate 10.
The pixel defining layer 30 includes a main pixel defining layer 31 and a sub-pixel defining layer 32 disposed around the main pixel defining layer 31, wherein the main pixel defining layer 31 is used for defining a pixel region, and the sub-pixel defining layer is used for preventing overflow of a solution during a solution process.
The OLED light emitting element 20 includes a first electrode layer 21, a light emitting layer including a first light emitting layer 24 and a second light emitting layer 24', and a second electrode layer 29.
As shown in fig. 1 and 4, a plurality of first openings 321 are arranged side by side on the sub-pixel defining layer 32, and the first openings 321 penetrate the sub-pixel defining layer 32 in the film thickness direction. The plurality of OLED light emitting elements 20 and the main pixel defining layer 31 are disposed in the first opening 321, and the first opening 321 is in a long strip shape.
As shown in fig. 1 and 5, a plurality of second openings 311 are spaced apart from each other on the main pixel defining layer 31 in each of the first openings 321, and the second openings 311 penetrate through the main pixel defining layer 31 in the film thickness direction.
One second opening 311 corresponds to one sub-pixel, and a plurality of first sub-pixel arrays are distributed on the thin film transistor array substrate. Part of the OLED light emitting element 20 is located completely in the second opening 311, for example, the first electrode layer 21 of the OLED light emitting element 20 is located in the second opening 311.
As shown in fig. 2, a surface of the main pixel defining layer 31 facing away from the thin film transistor array substrate 10 is higher than a surface of the first electrode layer 21 facing away from the thin film transistor array substrate 10, and the main pixel defining layer 31 covers a portion of the first electrode layer 21 located in the second opening 311.
The surface of the sub-pixel defining layer 32 facing away from the thin film transistor array substrate 10 is higher than the surface of the main pixel defining layer 31 facing away from the thin film transistor array substrate 10.
The sub-pixel definition layer 32 covers a part of the main pixel definition layer 31, the inner wall of the first opening 321 is composed of the main pixel definition layer 31 and the sub-pixel definition layer 32, the inner wall of the first opening 321 is of a climbing structure, and as the etching liquid can be transversely eroded in the process of preparing the sub-pixel definition layer 32, the bottom of the sub-pixel definition layer is easily over-etched to form an inverted trapezoidal structure, so that the pixel aperture ratio is influenced, and the influence caused by transverse erosion can be relieved by the climbing structure.
The sub-pixel defining layer 32 functions as a retaining wall and a carrying solution, so as to prevent the solution from overflowing the set preparation area and polluting the adjacent area when the solution process is used to prepare the OLED light-emitting device 20. The sub-pixel defining layer 32 is an organic photoresist containing fluorine, and the exposed surface of the sub-pixel defining layer 31 has hydrophobicity, so that liquid drops can be prevented from accumulating on the sub-pixel defining layer 32 in the process of carrying out solution processes such as ink-jet printing.
As shown in fig. 3, the OLED light-emitting element 20 is a white OLED light-emitting element, and the OLED light-emitting element 20 includes a first electrode layer 21, a first hole injection layer 22, a first hole transport layer 23, a first light-emitting layer 24, a first electron transport layer 25, a conductive intermediate layer 26, a second hole injection layer 22 ', a second hole transport layer 23 ', an electron blocking layer 27, a second light-emitting layer 24 ', a second electron transport layer 25, a hole injection layer 28, and a second electrode layer 29, which are sequentially formed.
The OLED light emitting device 20 may be manufactured by combining an evaporation process and a solution process, and at least one of the OLED light emitting devices 20 is manufactured by using the solution process, which includes, but is not limited to, inkjet printing, screen printing, spin coating, slit extrusion coating, and blade coating. If the evaporation method is adopted, an open mask is adopted, wherein the orthographic projection of the open mask on the thin film transistor array substrate 10 is in an area surrounded by the outer boundary of the sub-pixel defining layer.
Specifically, the first hole injection layer 22, the first hole transport layer 23, and the first light emitting layer 24 are prepared by an inkjet printing method, and a film layer after the first light emitting layer 24 may be prepared by evaporation or an inkjet printing method.
The first electrode layer 21 is an anode, the anode is an indium tin oxide-silver-indium tin oxide three-layer composite anode structure, the second electrode layer 29 is a cathode, and the cathode is a magnesium-silver composite metal. The opening size of the second opening 311 is determined according to the size of the anode area.
The first light-emitting layer 24 is a blue light-emitting layer, and the second light-emitting layer 24' is a yellow light-emitting layer.
As shown in fig. 8, this embodiment further provides a method for manufacturing an OLED display panel, including:
step S10, providing a thin film transistor array substrate 10, and forming a first electrode layer 21 on the thin film transistor array substrate 10;
and sequentially evaporating indium tin oxide, silver electrodes and indium tin oxide film layers on the surface of the thin film transistor array substrate 10 to form a plurality of first electrode layers 21, wherein the first electrode layers 21 are composite anodes.
Step S20, forming a main pixel defining layer 31 on the thin film transistor array substrate 10, the main pixel defining layer 31 being disposed around the first electrode layer 21;
a silicon oxide film is evaporated on the thin film transistor array substrate 10, and then the silicon oxide film is subjected to processes of exposure, development, etching, peeling and the like to form the patterned main pixel defining layer 31, wherein the thickness of the film layer of the main pixel defining layer 31 is 10-100 nanometers, the main pixel defining layer 31 is arranged around the first electrode layers 21, and the pattern of the main pixel defining layer between the adjacent first electrode layers 21 is discontinuous.
Step S30, forming a sub-pixel defining layer 32 on the thin film transistor array substrate 10, the sub-pixel defining layer 32 surrounding the main pixel defining layer 31;
evaporating an organic photoresist containing fluorine elements on the thin film transistor array substrate 10, exposing and developing the organic photoresist to form the patterned sub-pixel defining layer 32, wherein the thickness of the film layer of the sub-pixel defining layer 32 is 500-2500 nm, and the fluorine elements of the exposed and developed organic photoresist overflow to the surface of the organic photoresist, so that the surface of the formed sub-pixel defining layer 32 has hydrophobicity;
the sub-pixel defining layer 32 is formed around each first electrode layer 21, and a side surface of the sub-pixel defining layer 32 facing away from the thin film transistor array substrate 10 is higher than a side surface of the main pixel defining layer 31 facing away from the thin film transistor array substrate 10.
A step S40 of forming a light-emitting layer and a second electrode layer 29 on the first electrode layer 21;
firstly, a first hole injection layer 22, a first hole transport layer 23 and a first light emitting layer 24 are sequentially formed on the surface of the first electrode layer 21 by using a solution process, specifically, an ink-jet printing mode, wherein the first light emitting layer 24 is a blue light emitting layer;
sequentially evaporating a first electronic transmission layer 25 and a conductive intermediate layer 26 on the surface of the first light-emitting layer 24 by using an open mask plate, wherein the area of the open mask plate is in an area surrounded by the outer boundary of the sub-pixel defining layer 32, and specifically, the shortest distance from the boundary of the open mask plate to the outer boundary of the sub-pixel defining layer 32 is 5-50 micrometers;
then, by using a solution process, specifically, by using an inkjet printing method, a second hole injection layer 22 ', a second hole transport layer 23 ', an electron blocking layer 27, a second light emitting layer 24 ', a second electron transport layer 25, and a hole injection layer 28 are sequentially formed on the surface of the conductive intermediate layer 26;
finally, a magnesium-silver composite metal material is vapor-deposited on the hole injection layer 28 by using an open mask plate to form the second electrode layer 29, and the second electrode layer 29 is a cathode.
The method further includes encapsulating the OLED light emitting element 20, and the specific encapsulation method can refer to the prior art and is not described herein again.
The method combines the ink-jet printing technology and the evaporation technology, has flexible mode, and can improve the utilization rate of the OLED light-emitting element
Example two
As shown in fig. 6 and 7, the sub-pixel defining layer 32 has a first opening, and the pixels of the OLED display panel are all located in the first opening, that is, the solid portion of the sub-pixel defining layer 32 is disposed on the periphery of the tft array substrate.
The sub-pixel defining layer 32 is a closed structure, the sub-pixel defining layer is disposed around the main pixel defining layer 31, and a surface of the sub-pixel defining layer 32 on a side away from the thin film transistor array substrate 10 is higher than a surface of the main pixel defining layer 31 on a side away from the thin film transistor array substrate 10.
Compared with the first embodiment, the sub-pixel defining layer 32 in the present embodiment is only disposed on the periphery of the tft array substrate 10, and this design is used to prevent the ink overflow during the printing process, and on the premise of this design, the evaporation of the film layer can be performed by using an open mask.
Other structures are the same as those in the first embodiment, and reference may be made to the first embodiment.
Has the advantages that: by adding a sub-pixel defining layer with a hydrophobic surface, the solution process is favorably realized in the process of preparing the white OLED luminescent device, and the material utilization rate of the white OLED device is further improved.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.
Claims (10)
1. An OLED display panel, comprising:
a thin film transistor array substrate;
the OLED light-emitting elements are arranged on the thin film transistor array substrate and comprise a first electrode layer, a light-emitting layer and a second electrode layer; and
the pixel definition layer is arranged on the thin film transistor array substrate and comprises a main pixel definition layer and a sub-pixel definition layer; wherein,
the sub-pixel defining layer is provided with at least one first opening, and the at least one OLED light-emitting element and the main pixel defining layer are arranged in the first opening.
2. The OLED display panel of claim 1, wherein the main pixel defining layer has a plurality of second openings, and one of the OLED light emitting elements is correspondingly disposed in one of the second openings.
3. The OLED display panel of claim 2, wherein a side surface of the sub-pixel defining layer facing away from the thin film transistor array substrate is higher than a side surface of the main pixel defining layer facing away from the thin film transistor array substrate.
4. The OLED display panel of claim 3, wherein the inner wall of the first opening of the sub-pixel defining layer is in a ramp structure.
5. The OLED display panel of claim 3, wherein the secondary pixel defining layer covers a portion of the primary pixel defining layer within the first opening.
6. The OLED display panel of claim 1, wherein the sub-pixel defining layer is an organic photoresist containing fluorine element, and the surface of the sub-pixel defining layer is a hydrophobic surface.
7. The OLED display panel of claim 2, wherein the sub-pixel defining layer has a plurality of first openings disposed side by side, and a plurality of first electrode layers of the OLED light emitting elements are disposed in the first openings at intervals.
8. The OLED display panel of claim 7, wherein the first opening is elongated.
9. The preparation method of the OLED display panel is characterized by comprising the following steps:
step S10, providing a thin film transistor array substrate, and forming a first electrode layer on the thin film transistor array substrate;
step S20, forming a main pixel defining layer on the thin film transistor array substrate, the main pixel defining layer being disposed around the first electrode layer;
step S30, forming a sub-pixel defining layer on the thin film transistor array substrate, the sub-pixel defining layer surrounding the main pixel defining layer;
step S40 is to form a light-emitting layer and a second electrode layer on the first electrode layer.
10. The method for preparing a composite material according to claim 9, wherein the step S40 includes:
s401, sequentially forming a first hole injection layer, a first hole transport layer and a first light emitting layer on the first electrode layer by using a solution process;
s402, sequentially evaporating a first electronic transmission layer and a conductive intermediate layer on the blue light emitting material layer by using an open mask plate;
s403, sequentially forming a second hole injection layer, a second hole transport layer, an electron blocking layer, a second light emitting layer, a second electron transport layer and a hole blocking layer on the conductive intermediate layer by using a solution process;
and S404, evaporating a second electrode layer on the hole barrier layer by using an open mask plate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910366798.4A CN110137225A (en) | 2019-05-05 | 2019-05-05 | OLED display panel and preparation method thereof |
| PCT/CN2019/087917 WO2020224010A1 (en) | 2019-05-05 | 2019-05-22 | Oled display panel and manufacturing method therefor |
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| CN201910366798.4A CN110137225A (en) | 2019-05-05 | 2019-05-05 | OLED display panel and preparation method thereof |
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| CN110707223A (en) * | 2019-09-05 | 2020-01-17 | 深圳市华星光电技术有限公司 | Light emitting device and display panel |
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