CN110118533A - A kind of 3 D detection method and detection device - Google Patents
A kind of 3 D detection method and detection device Download PDFInfo
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- CN110118533A CN110118533A CN201810112454.6A CN201810112454A CN110118533A CN 110118533 A CN110118533 A CN 110118533A CN 201810112454 A CN201810112454 A CN 201810112454A CN 110118533 A CN110118533 A CN 110118533A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
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- Length Measuring Devices By Optical Means (AREA)
- Instruments For Measurement Of Length By Optical Means (AREA)
Abstract
The invention discloses a kind of 3 D detection method and detection devices.This method comprises: light source module issues the first light beam of Wavelength tunable；The first light beam of part is reflected in the upper and lower surface of transparent film layer respectively；Detecting module receives the first light beam reflected, and two light beams interfere and generate the first interference fringe；The thickness of transparent film layer is determined according to the first interference fringe；Light source module issues the second light beam, and is emitted on beam splitter, and the second light beam is divided into third, the 4th light beam by beam splitter；Detecting module is emitted to by third beam emissions to device under test surface and after reflecting；By the 4th beam emissions to reference unit and is converted to reference beam and is emitted to detecting module；Detecting module receives the third light beam and reference beam reflected, and interferes and generate the second interference fringe；The detection of device under test surface three dimension is carried out according to the thickness of the second interference fringe and transparent film layer.The measurement of device under test surface accurate three-dimensional can be achieved in the present invention.
Description
Technical field
The present embodiments relate to semiconductor technology more particularly to a kind of 3 D detection method and detection devices.
Background technique
Concepts such as " super Moore's Laws " lead integrated circuit (IC) industry from the epoch for pursuing technology node, turn to more
New era mostly dependent on chip encapsulation technology development.Compared to conventional package, wafer-level packaging (Wafer Level
Packaging, WLP) reduce package dimension, save the process cost in terms of have significant advantage.Therefore, WLP will be future
One of the major technique for supporting IC to continue to develop.
WLP mainly includes Pillar/Gold/Solder Bump, reroutes the techniques skills such as layer (RDL), through silicon via (TSV)
Art.In order to increase the yield of chip manufacturing, require to carry out defects detection to chip in entire potting process, early stage sets
It is standby to be concentrated mainly on surface two-dimensional defects detection, such as pollution, scratch, particle etc..With the increase of process control needs, more
It more needs to detect surface three dimension feature, such as Bump height, RDL thickness, hole depth of TSV etc..
Chip three-dimensional measurement can be measured using the interference technique of light at present, but when there are hyaline membranes on device under test surface
When layer, since transparent film layer upper and lower surface reflected light is affected to interference fringe, it is also easy to produce biggish measurement error.
Summary of the invention
The embodiment of the present invention provides a kind of 3 D detection method and detection device, on the one hand can measure transparent film layer
Thickness；On the other hand influence of the transparent film layer to measurement result can be corrected, realizes device under test table according to transparent film layer thickness
The measurement of face accurate three-dimensional.
In a first aspect, the embodiment of the present invention provides a kind of 3 D detection method, device under test surface is formed with transparent film layer,
This method comprises:
Light source module issues the first light beam of Wavelength tunable, and adjusts the wavelength of first light beam；
First light beam is at least partly emitted to the device under test surface, first beam emissions are to be measured
The part of device surface is reflected in the upper and lower surfaces of the transparent film layer respectively；
Detecting module receives the first light beam reflected respectively by the upper and lower surfaces of the transparent film layer, described transparent
The first light beam that the upper and lower surfaces of film layer reflect respectively interferes in the test surface of the detecting module and generates
One interference fringe；
The thickness of the transparent film layer on the device under test surface is determined according to first interference fringe；
Light source module issues the second light beam, and by second beam emissions to beam splitter, the beam splitter will be described
The light splitting of second light beam is third light beam and the 4th light beam；
The third beam orthogonal is emitted to device under test surface, the third light beam is anti-through the device under test surface
After penetrating, detecting module is emitted to through the beam splitter；
By the 4th beam emissions to reference unit, and the 4th light beam is converted to reference light by the reference unit
Beam, the reference beam are emitted to detecting module through the beam splitter；
The detecting module receives the third light beam and the reference beam of the device under test surface reflection, described to be measured
The third light beam and the reference beam of device surface reflection interfere in the test surface of the detecting module and generate second
Interference fringe；
The three-dimensional inspection on the device under test surface is carried out according to the thickness of second interference fringe and the transparent film layer
It surveys.
Second aspect, the embodiment of the present invention also provide a kind of three-dimensional detection device, and device under test surface is formed with hyaline membrane
Layer, the device include:
Light source module for issuing the first light beam of Wavelength tunable, and adjusts the wavelength of first light beam, and described first
Light beam is at least partly emitted to the device under test surface, the part difference of first beam emissions to device under test surface
It is reflected in the upper and lower surfaces of the transparent film layer；
Detecting module, for receiving the first light beam reflected respectively by the upper and lower surfaces of the transparent film layer, institute
The first light beam that the upper and lower surfaces of transparent film layer reflect respectively is stated to interfere simultaneously in the test surface of the detecting module
The first interference fringe is generated, the thickness of the transparent film layer on device under test surface is determined according to first interference fringe；
Light source module is also used to issue the second light beam, and will be in second beam emissions to beam splitter；
Beam splitter, for being divided second light beam for third light beam and the 4th light beam, the third beam orthogonal hair
It is mapped to device under test surface, the 4th beam emissions to reference unit；
Reference unit, for the 4th light beam to be converted to reference beam, the reference beam is sent out through the beam splitter
It is mapped to detecting module；
The detecting module is also used to receive the reference beam, and after the device under test surface reflection, through institute
The third light beam of beam splitter transmission is stated, the third light beam transmitted through the beam splitter and the reference beam are in the detection
The test surface of module interferes and generates the second interference fringe, according to the thickness of second interference fringe and the transparent film layer
Degree carries out the three dimensional detection on the device under test surface.
3 D detection method provided in an embodiment of the present invention issues the first light beam of Wavelength tunable by light source module, and
Adjust the wavelength of the first light beam；First light beam is at least partly emitted to device under test surface, the first beam emissions are to be measured
The part of device surface is reflected in the upper and lower surfaces of transparent film layer respectively；It is received by detecting module by hyaline membrane
The first light beam that the upper and lower surfaces of layer reflect respectively, the first light that the upper and lower surfaces of transparent film layer reflect respectively
Beam interferes in the test surface of the first detecting module and generates the first interference fringe；Device to be measured is determined according to the first interference fringe
The thickness of the transparent film layer on part surface；The second light beam is issued by light source module, and by the second beam emissions to beam splitter, is divided
Second light beam is divided as third light beam and the 4th light beam by Shu Jing；Third beam orthogonal is emitted to device under test surface, third
Light beam is emitted to detecting module after device under test surface reflection, through beam splitter；By the 4th beam emissions to reference unit, and join
It is reference beam that unit, which is examined, by the 4th light beam, and reference beam is emitted to detecting module through beam splitter；By detecting module receive to
The third light beam and reference beam of device surface reflection are surveyed, the third light beam and reference beam of device under test surface reflection are detecting
The test surface of module interferes and generates the second interference fringe；According to the thickness of the second interference fringe and transparent film layer carry out to
Survey the three dimensional detection of device surface.On the one hand technical solution provided in an embodiment of the present invention can be surveyed using the interference technique of light
Measure the thickness of transparent film layer；On the other hand the measurement of device under test surface three dimension may be implemented, and according to transparent film layer thickness,
Influence of the transparent film layer to measurement result is corrected, measurement accuracy is improved.
Detailed description of the invention
Fig. 1 is a kind of flow chart for 3 D detection method that the embodiment of the present invention one provides；
Fig. 2 is a kind of structural schematic diagram of three-dimensional detection device provided by Embodiment 2 of the present invention；
Fig. 3 A is the optical interference circuit schematic diagram that transparent film layer thickness is measured in the embodiment of the present invention two；
Fig. 3 B is interference light of the device under test surface relative to the plane of reference height of reference unit in the embodiment of the present invention two
Road schematic diagram；
Fig. 4 is the structural schematic diagram for the three-dimensional detection device that the embodiment of the present invention three provides；
Transparent film layer interference strength distribution schematic diagram when Fig. 5 is different wave length in the embodiment of the present invention three.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure, wherein same or similar from beginning to end
Label indicates same or similar element or element with the same or similar functions.
Embodiment one
Fig. 1 show a kind of flow chart of 3 D detection method of the offer of the embodiment of the present invention one, and the present embodiment is applicable
In device under test surface is formed with transparent film layer the case where, this method comprises the following steps:
Step 10, light source module issue the first light beam of Wavelength tunable, and adjust the wavelength of the first light beam.
Wherein, the first light beam is coherent light, such as can be laser, and light source module may include laser, output wavelength
Adjustable continuous laser.
First light beam is at least partly emitted to device under test surface, the first beam emissions to device under test by step 20
The part on surface is reflected in the upper and lower surfaces of transparent film layer respectively.
Step 30, detecting module receive the first light beam reflected respectively by the upper and lower surfaces of transparent film layer, transparent
The first light beam that the upper and lower surfaces of film layer reflect respectively is interfered in the test surface of detecting module and to generate first dry
Relate to striped.
It is understood that the first light beam that transparent film layer upper and lower surfaces reflect respectively meets the condition of interference,
Two-beam is interfered in the test surface of detecting module, generates the first interference fringe.
Step 40, determined according to the first interference fringe device under test surface transparent film layer thickness.
According to interference fringe maximum formula: 2nh=m λ, wherein n indicates the refractive index of transparent film layer, and m is positive integer, λ
Indicate that the wavelength of light, h indicate the thickness of transparent film layer, for the transparent film layer of certain material, refractive index n is it is known that find out correspondence
The positive integer m of wavelength X is utilizedThe thickness of you can get it transparent film layer.
Step 50, light source module issue the second light beam, and by the second beam emissions to beam splitter, and beam splitter is by the second light
Beam light splitting is third light beam and the 4th light beam.
Wherein, the second light beam is coherent light, such as can be laser, and light source module may include laser, and output is relevant
Light emitting is divided into two beams to beam splitter.
Third beam orthogonal is emitted to device under test surface by step 60, third light beam after device under test surface reflection,
Detecting module is emitted to through beam splitter.
Step 70, by the 4th beam emissions to reference unit, and the 4th light beam is converted to reference beam by reference unit, ginseng
It examines light beam and is emitted to detecting module through beam splitter.
Step 80, detecting module receive the third light beam and reference beam of device under test surface reflection, device under test surface
The third light beam and reference beam of reflection interfere in the test surface of detecting module and generate the second interference fringe.
It is understood that the second light beam that light source module issues is divided into third light beam and the 4th light beam by beam splitter,
Wherein third light beam is emitted to reference unit as reference light as detection light emitting to device under test surface, the 4th light beam, shape
At interferometer structure, the third light beam (detection light beam) of device under test surface reflection reaches detection mould after beam splitter transmits
4th light beam of block, reference unit reflection reaches detecting module, detection of the two-beam in detecting module after beam splitter reflects
Face interferes, and generates the second interference fringe.
Step 90, the three dimensional detection that device under test surface is carried out according to the thickness of the second interference fringe and transparent film layer.
Wherein, the three dimensional detection measurement on device under test surface is the plane of reference of the device under test surface relative to reference unit
Height.
The technical solution of the present embodiment is issued the first light beam of Wavelength tunable by light source module, and adjusts the first light beam
Wavelength；First light beam is at least partly emitted to device under test surface, portion of first beam emissions to device under test surface
Divide and is reflected respectively in the upper and lower surfaces of transparent film layer；By detecting module receive by transparent film layer upper surface and
The first light beam that lower surface is reflected respectively, the first light beam that the upper and lower surfaces of transparent film layer reflect respectively is in detecting module
Test surface interfere and generate the first interference fringe；The transparent film layer on device under test surface is determined according to the first interference fringe
Thickness；The second light beam is issued by light source module, and by the second beam emissions to beam splitter, beam splitter divides the second light beam
Light is third light beam and the 4th light beam；Third beam orthogonal is emitted to device under test surface, third light beam is through device under test table
After the reflection of face, detecting module is emitted to through beam splitter；By the 4th beam emissions to reference unit, and reference unit is by the 4th light beam
For reference beam, reference beam is emitted to detecting module through beam splitter；Device under test surface reflection is received by detecting module
Third light beam and reference beam, the third light beam and reference beam of device under test surface reflection occur in the test surface of detecting module
Interfere and generates the second interference fringe；The three-dimensional on device under test surface is carried out according to the thickness of the second interference fringe and transparent film layer
Detection.On the one hand technical solution provided in an embodiment of the present invention can measure the thickness of transparent film layer using the interference technique of light
Degree；On the other hand the measurement of device under test surface three dimension may be implemented, and according to transparent film layer thickness, correct transparent film layer to survey
The influence of result is measured, measurement accuracy is improved.
Based on the above technical solution, optionally, light source module may include first light source and second light source, and first
Light source issues the first light beam, and second light source issues the second light beam；Detecting module may include the first detecting module and the second detection
Module, the first detecting module receive the first interference fringe, and the second detecting module receives the second interference fringe.
It is understood that measuring the interference light of transparent film layer thickness in a kind of embodiment of the embodiment of the present invention
Road and measurement device under test surface relative to the plane of reference height of reference unit optical interference circuit can be two optical paths, i.e., first
Light source launches the first light beam of Wavelength tunable, and the first light beam is visited after being reflected by the upper and lower surfaces of transparent film layer by first
It surveys module to receive, generates the first interference fringe in the test surface of the first detecting module；Second light source issues the second light beam, through beam splitting
Mirror is divided into third light beam and the 4th light beam, generates second in the test surface of the second detecting module respectively as detection light and reference light
Interference fringe.
Optionally, light source module can only include first light source, and first light source issues the first light beam and/or the second light beam；
Detecting module can only include the first detecting module, and the first detecting module receives first interference fringe and/or the second interference
Striped；The first light beam that first light source issues is divided by beam splitter to be emitted to device under test surface portion and emits to reference unit
Part, by controlling the photoswitch being arranged in front of reference unit so as to absorb transmitting to the part of reference unit.
It is understood that measuring the interference of transparent film layer thickness in the another embodiment of the embodiment of the present invention
Optical path and measurement device under test surface can be multiplexed together relative to the optical interference circuit of the plane of reference height of reference unit, only be made
Transparent membrane is being measured by the way that photoswitch is arranged between beam splitter and reference unit with first light source and the first detecting module
When thickness, photoswitch is closed, and to block and absorb the light beam for being emitted to reference unit, only allows transparent film layer upper surface and following table
The light beam of face reflection enters the first detecting module；When measuring plane of reference height of the device under test surface relative to reference unit,
Photoswitch is opened, and the reference beam that the light beam and reference unit of device under test surface reflection generate can enter the first detection mould
Block.By can simplify light channel structure merely with first light source and the first detecting module, cost is reduced, device under test table is improved
The stability of face three-dimensional measurement.
Optionally, step 40 specifically includes:
According to the first interference fringe, it is corresponding that maximum occurs in the first fringe intensity of record for step 401, detecting module
At least two wavelength Xs of the first light beam1、λ2；
Step 402 calculates satisfaction using alternative manner | M λ1-Nλ2Positive integer M, N of | < ξ, and make
It is minimized thickness of the corresponding h as transparent film layer, wherein ξ is default tolerance, and p=1,2, n be the refractive index of transparent film layer.
There is the formula of maximum: 2nh=m λ according to interference fringe, pole occurs when detecting module records the first interference fringe
It is worth corresponding λ greatly1、λ2Meet:
2nh=M λ1 (1)
2nh=N λ2 (2)
Wherein M, N are positive integer, using iterative algorithm, find out satisfaction:
|Mλ1-Nλ2|<ξ (3)
Positive integer M, N, wherein ξ is default tolerance, such as can be ξ=5nm, then enables 2nh in section [M λ1-λ1/
2,Mλ1+λ1/ 2] search in range, so that
Corresponding 2nh when value minimum can acquire transparent film layer thickness h=2nh/n.Wherein, λpAnd NpIndicate corresponding
The integral multiple of each extremum wavelengths and each extremum wavelengths.
It should be noted that the solution procedure of the above transparent film layer thickness can be executed by computer program, in program
It can also include reversed check algorithm, with debug solution.For example, in wavelength X when certain is measured1、λ2Between have to two
There is the wavelength of maximum in a corresponding interference fringe, and the value of multiple transparent membrane thickness hs is solved according to formula (3) and (4), such as
Obtain h1And h2Two solve, wherein h1For actual film thickness, then the h that will be solved1And h2It is reversely examined, it can be deduced that when thin
Film thickness is h2When, wavelength X1、λ2Between there is also other wavelength and meet the great condition of interference fringe, but actual measurement is simultaneously
It, then can be by h without this wavelength2It excludes.
Optionally, step 90 specifically includes:
Height of the device under test surface relative to the plane of reference of reference unit is determined according to the following formula:
I=| A1exp(ik2Δz)+A2exp(ik2(Δz+nh))+Bexp(iksinθx)|2；Wherein, I indicates detection mould
Second fringe intensity of the test surface of block, A1Indicate the reflection related coefficient of transparent film layer upper surface, A2Indicate transparent film layer
Related coefficient is reflected in lower surface, and n indicates the refractive index of transparent film layer, and h indicates that transparent film layer thickness, k=2 π/λ, λ indicate light
Wavelength, Δ z indicate the difference in height on device under test surface and the plane of reference, and θ indicates the angle of detection light beam and reference beam.
Embodiment two
Fig. 2 show a kind of structural schematic diagram of three-dimensional detection device provided by Embodiment 2 of the present invention, and the present embodiment can
The case where being formed with transparent film layer suitable for device under test surface, the three-dimensional detection device include:
Light source module 10 for issuing the first light beam of Wavelength tunable, and adjusts the wavelength of the first light beam, the first light beam
It is at least partly emitted to device under test surface, the part of the first beam emissions to device under test surface is respectively in the upper of transparent film layer
Surface and lower surface are reflected；Detecting module 20 is reflected for receiving by the upper and lower surfaces of transparent film layer respectively
First light beam, the first light beam that the upper and lower surfaces of transparent film layer reflect respectively occur dry in the test surface of detecting module 20
The first interference fringe is related to and generated, the thickness of the transparent film layer on device under test surface is determined according to the first interference fringe；Light source die
Block 10 is also used to issue the second light beam, and will be in the second beam emissions to beam splitter 30；Beam splitter 30 is used for the second light beam
Light splitting is third light beam and the 4th light beam, and third beam orthogonal is emitted to device under test surface, and the 4th beam emissions are to reference to single
Member 40；Reference unit 40, for the 4th light beam to be converted to reference beam, reference beam is emitted to detecting module through beam splitter 30
20；Detecting module 20 is also used to receive reference beam, and after device under test surface reflection, transmitted through beam splitter 30
Three light beams, the third light beam and reference beam transmitted through beam splitter 30 interfere in the test surface of detecting module 20 and generate
Two interference fringes carry out the three dimensional detection on device under test surface according to the thickness of the second interference fringe and transparent film layer.
Wherein, the first light beam is coherent light, such as can be laser, and light source module 10 may include laser, output wave
Long adjustable continuous laser.The first light beam that transparent film layer upper and lower surfaces reflect respectively meets the condition of interference, two beams
Light is interfered in the test surface of detecting module 20, generates the first interference fringe.According to interference fringe maximum formula: 2nh=m
λ, wherein n indicates the refractive index of transparent film layer, and m is positive integer, and λ indicates that the wavelength of light, h indicate the thickness of transparent film layer, for
The transparent film layer of certain material, refractive index n are utilized it is known that find out the positive integer m of corresponding wavelength λIt is transparent that you can get it
The thickness of film layer.Second light beam is coherent light, such as can be laser, and light source module 10 may include laser, light source module
10 the second light beams issued are divided into third light beam and the 4th light beam by beam splitter 30, and wherein third light beam is as detection light emitting
To device under test surface, the 4th light beam is emitted to reference unit 40 as reference light, forms interferometer structure, device under test surface
Third light beam (detection light beam) arrival detecting module 20 after the transmission of beam splitter 30 of reflection, the 4th of the reflection of reference unit 40 the
Light beam reaches detecting module 20 after the reflection of beam splitter 30, and two-beam is interfered in the test surface of detecting module 20, generates
Second interference fringe.The three dimensional detection measurement on device under test surface is reference of the device under test surface relative to reference unit 40
The height in face.
On the one hand the technical solution of the present embodiment can measure the thickness of transparent film layer using the interference technique of light；Separately
On the one hand the measurement of device under test surface three dimension may be implemented, and according to transparent film layer thickness, correct transparent film layer and measurement is tied
The influence of fruit improves measurement accuracy.
Fig. 3 A show measurement transparent film layer thickness optical interference circuit schematic diagram, Fig. 3 B measure device under test surface relative to
The optical interference circuit schematic diagram of the plane of reference height of reference unit.Optionally, light source module 10 includes first light source 11 and the second light
Source 12, first light source 11 issue the first light beam, and second light source 12 issues the second light beam；Detecting module 20 includes the first detecting module
21 and second detecting module 22, the first detecting module 21 receive the first interference fringe, the second detecting module 22 receives the second interference
Striped.
It is understood that measuring the interference light of transparent film layer thickness in a kind of embodiment of the embodiment of the present invention
Road and measurement device under test surface relative to the plane of reference height of reference unit optical interference circuit can be two optical paths, i.e., first
Light source 11 launches the first light beam of Wavelength tunable, the first light beam reflected by the upper and lower surfaces of transparent film layer after by first
Detecting module 21 receives, and generates the first interference fringe in the test surface of the first detecting module 21；Second light source 12 issues the second light
Beam divides for third light beam and the 4th light beam through beam splitter 30, respectively as detection light and reference light in the second detecting module 22
Test surface generates the second interference fringe.
Optionally, first light source 11 and/or second light source 12 can be optical parametric oscillator laser, optical parametric oscillator
The signal light and ideler frequency light of laser output wavelength consecutive variations.Optical parametric oscillator laser output wavelength may range from
450~900nm.
Optionally, light source module 10 can only include first light source 11, and first light source 11 issues the first light beam and the second light
Beam；Detecting module 20 can only include the first detecting module 21, and the first detecting module 21 receives the first interference fringe and second dry
Relate to striped；The three-dimensional detection device further include: photoswitch 50, the first light beam issued for first light source 11 are divided by beam splitter 30
When to be emitted to device under test surface portion and emit to the part of reference unit 40, transmitting is absorbed to the portion of reference unit 40
Point.
It is understood that measuring the interference of transparent film layer thickness in another real-time mode of the embodiment of the present invention
Optical path and measurement device under test surface can be multiplexed together relative to the optical interference circuit of the plane of reference height of reference unit, only be made
It is being surveyed with first light source 11 and the first detecting module 20 by the way that photoswitch 50 is arranged between beam splitter 30 and reference unit 40
When measuring transparent membrane thickness, photoswitch 50 is closed, and to block and absorb the light beam for being emitted to reference unit 40, only allows hyaline membrane
The light beam of layer upper and lower surfaces reflection enters the first detecting module 20；On measurement device under test surface relative to reference unit
When 40 plane of reference height, photoswitch 50 is opened, the reference light that the light beam and reference unit 40 of device under test surface reflection generate
Beam can enter the first detecting module 20.By can simplify optical path knot merely with first light source 11 and the first detecting module 21
Structure reduces cost, improves the stability of device under test surface three dimension measurement.
With continued reference to Fig. 2, optionally, detecting module 20 includes photodetector 201 and computing unit 202；Photodetection
Device 201 is for receiving the first interference fringe and/or the second interference fringe；Computing unit 202 is used to calculate the thickness of transparent film layer
And/or height of the device under test surface relative to the plane of reference of reference unit 40.
Optionally, computing unit 202 is specifically used for:
According to received first interference fringe of photodetector 201, records the first fringe intensity and maximum pair occur
At least two wavelength Xs that the light source module 10 answered exports1、λ2；
Calculated and met using alternative manner | M λ1-Nλ2Positive integer M, N of | < ξ, and makeIt is minimized
Thickness of the corresponding h as transparent film layer, wherein ξ is default tolerance, and p=1,2, n be the refractive index of transparent film layer.
The specific method of the calculating transparent film layer thickness of computing unit 202 describes during see the above embodiment 1 for details, herein no longer
It is tired to state.
Optionally, computing unit 202 is also used to:
Height of the device under test surface relative to the plane of reference of reference unit 40 is determined according to the following formula:
I=| A1exp(ik2Δz)+A2exp(ik2(Δz+nh))+Bexp(iksinθx)|2；Wherein I indicates detecting module
Test surface the second fringe intensity, A1Indicate the reflection related coefficient of transparent film layer upper surface, A2It indicates under transparent film layer
Surface reflection related coefficient, n indicate the refractive index of transparent film layer, and h indicates that transparent film layer thickness, k=2 π/λ, λ indicate the wave of light
Long, Δ z indicates the difference in height on device under test surface and the plane of reference, and θ indicates the angle of detection light beam and reference beam.
Embodiment three
Fig. 4 is the structural schematic diagram for the three-dimensional detection device that the embodiment of the present invention three provides, and the present embodiment can be with above-mentioned
Based on embodiment, a specific example is provided.
It is in the present embodiment that the optical interference circuit for measuring transparent film layer thickness is opposite with measurement device under test surface with reference to Fig. 4
It is multiplexed together in the optical interference circuit of the plane of reference height of reference unit, first light source 11 and the first detecting module 21 is used only,
Wherein the first detecting module 21 includes the first photodetector 211 and the first computing unit 212.Specifically, the first photodetection
Device 211 can be complementary metal oxide semiconductor or ccd image sensor, and the optical signal interfered is turned
It is changed to electric signal.
Optionally, first light source 11 can be optical parametric oscillator laser, optical parametric oscillator laser output wavelength
The signal light and ideler frequency light of consecutive variations.
The light source as needed for the embodiment of the present invention is the coherent source that wavelength is continuously adjusted, optical parametric oscillator (OPO)
Laser is a kind of coherent source of tunable wave length, and the laser of a frequency can be converted to the relevant of signal light and ideler frequency light
Output is a kind of to meet the relevant of condition needed for the present embodiment furthermore, it is possible to realize tuning in a very wide frequency range
Light source.
Optionally, optical parametric oscillator laser output wavelength may range from 450~900nm.
Optionally, photoswitch 50 can be optical shutter, and optical shutter when measure transparent film layer thickness for closing, absorption the
One beam emissions are to the part of reference unit 40；Carry out device under test surface three dimensional detection when open, make the 4th light beam and
Reference beam penetrates.
Optionally, reference unit 40 is reflecting mirror, has default angle between mirror surface and device under test surface.
With reference to Fig. 4, device under test surface is parallel to the horizontal plane, and mirror surface and device under test surface have default folder
Angle, such as can be 89 °, the light beam and reference beam for the device under test surface reflection for receiving the first detecting module 21 have
Angle theta.
Optionally, which further includes enlarging objective 60, and enlarging objective 60 is located at beam splitter 30 and device to be measured
Between part surface.
Optionally, which further includes reflecting mirror 70 and illuminating lens group 80, and reflecting mirror 70 is arranged in light source
Between module 10 and illuminating lens group 80, the first beam emissions for issuing light source module 10 to illuminating lens group 80,
Illuminating lens group 80 is arranged between reflecting mirror 70 and beam splitter 30.
Optionally, which further includes pipe mirror 90, between beam splitter 30 and detecting module 20, for receiving
Collect the light beam of directive detecting module 20.
The present embodiment measures transparent film layer thickness h, and detailed process is as follows:
First light source 11 select OPO laser, can simultaneously output signal light (signal light) and ideler frequency light
(idle light), by adjusting resonant crystal, signal light (and idle light) wavelength can consecutive variations.
When device under test surface is formed with transparent film layer, photoswitch 50 is closed, and blocks and absorb the 4th light beam, is only allowed
The light beam of transparent film layer upper and lower surfaces reflection enters the first detecting module 21, at this time signallight and idle
Light generates interference in the test surface of the first detecting module 21 respectively:
Is=| A1s+A2s exp(iks2nh)|2 (5)
Ii=| A1i+A2iexp(iki2nh)|2 (6)
Wherein, A1sAnd A2sSignal light is respectively indicated in the reflection coefficient of transparent film layer upper and lower surfaces, A1i
And A2iIdle light is respectively indicated in the reflection coefficient of transparent film layer upper and lower surfaces.For general medium, reflection
Coefficient A1s、A2s、A1iAnd A2iIt is regarded as continuous gradual.
OPO resonant crystal is adjusted, signal light and idle the light consecutive variations for exporting OPO laser can
Interference signal is obtained on the test surface of the first detecting module 21 with the change curve of wavelength.OPO laser used in the present embodiment
The variation range of output wavelength is 450-900nm, transparent film layer interference strength distribution schematic diagram when Fig. 5 show different wave length.
It is 478nm, 515nm, 558nm, 608nm and 669nm that its signal light, which obtains corresponding wavelength when interfering maximum,；Its
It is 744nm and 837nm that idle light, which obtains corresponding wavelength when interfering maximum,.According to formula (5) and (6) it is found that interference
When signal obtains maximum, transparent film layer thickness need to meet 2nh=m1λsOr 2nh=m2λi, wherein m1, m2For positive integer, λs, λi
The respectively wavelength of signal light and idle light.
When therefore, in a certain wavelength band, having and only having several maximum, and 2nh must be all maximum pair
Answer the integral multiple of wavelength.The method for seeking 2nh is as follows:
Corresponding minimum wavelength (such as 478nm) is as radix λ first using in extreme valuemin, M is positive integer, so that M λminMost
Close to the integral multiple of other wavelength
|Mλmin-Nλothers|<ξ (7)
Wherein N is also positive integer, and ξ is the tolerance that definition allows, such as ξ=5nm can be set.
Then enable 2nh in section [M λ1-λ1/2,Mλ1+λ1/ 2] range searching, so that
Corresponding 2nh when value minimum can acquire transparent film layer thickness h=2nh/n.Wherein, λpAnd NpIndicate corresponding
The integral multiple of each extremum wavelengths and each extremum wavelengths.
For interference signal as shown in Figure 5, can get corresponding wavelength when extreme value be 478nm, 515nm, 558nm,
608nm, 669nm, 744nm and 837nm are iterated to calculate according to formula (7) and (8) by computer program, and 2nh=can be acquired
6693.3nm can get transparent medium if transparent film layer refractive index n=1.5 with a thickness of h=2231.1nm.
After solving transparent film layer thickness h, photoswitch 50 is opened, and it is dry that the test surface of the first detecting module 21 receives second
Striped is related to, determines height of the device under test surface relative to the plane of reference of reference unit according to the following formula:
I=| A1exp(ik2Δz)+A2exp(ik2(Δz+nh))+Bexp(iksinθx)|2；Wherein, I indicates detection mould
Second fringe intensity of the test surface of block, A1Indicate the reflection related coefficient of transparent film layer upper surface, A2Indicate transparent film layer
Related coefficient is reflected in lower surface, and n indicates the refractive index of transparent film layer, and h indicates that transparent film layer thickness, k=2 π/λ, λ indicate light
Wavelength, Δ z indicate the difference in height on device under test surface and the plane of reference, and θ indicates the angle of detection light beam and reference beam.
In addition, when device under test surface does not have transparent film layer, the interference fringe of the detection light and reference light of single wavelength X
It is described as follows
I=| Aexp (ik2 Δ z)+Bexp (iksin θ x) |2 (9)
Wherein k=2 π/λ, Δ z indicate the difference in height of the plane of reference of device under test face and reference unit, and θ indicates detection light beam
With the angle of reference beam, A, B respectively indicate reflection (or transmission) coefficient of detection optical path and reference path.According to formula (9)
It can determine height of the device under test surface relative to the plane of reference of reference unit.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (20)
1. a kind of 3 D detection method, device under test surface is formed with transparent film layer characterized by comprising
Light source module issues the first light beam of Wavelength tunable, and adjusts the wavelength of first light beam；
First light beam is at least partly emitted to the device under test surface, first beam emissions to device under test
The part on surface is reflected in the upper and lower surfaces of the transparent film layer respectively；
Detecting module receives the first light beam reflected respectively by the upper and lower surfaces of the transparent film layer, the transparent film layer
The first light beam for reflecting respectively of upper and lower surfaces interfered in the test surface of the detecting module and to generate first dry
Relate to striped；
The thickness of the transparent film layer on the device under test surface is determined according to first interference fringe；
Light source module issues the second light beam, and by second beam emissions to beam splitter, and the beam splitter is by described second
Light beam light splitting is third light beam and the 4th light beam；
The third beam orthogonal is emitted to device under test surface, the third light beam is through the device under test surface reflection
Afterwards, detecting module is emitted to through the beam splitter；
By the 4th beam emissions to reference unit, and the 4th light beam is converted to reference beam by the reference unit,
The reference beam is emitted to detecting module through the beam splitter；
The detecting module receives the third light beam and the reference beam of the device under test surface reflection, the device under test
The third light beam and the reference beam of surface reflection interfere in the test surface of the detecting module and generate the second interference
Striped；
The three dimensional detection on the device under test surface is carried out according to the thickness of second interference fringe and the transparent film layer.
2. 3 D detection method according to claim 1, which is characterized in that the light source module includes first light source and
Two light sources, the first light source issue the first light beam, and the second light source issues the second light beam；The detecting module includes first
Detecting module and the second detecting module, first detecting module receive first interference fringe, second detecting module
Receive second interference fringe.
3. 3 D detection method according to claim 1, which is characterized in that the light source module includes first light source, institute
It states first light source and issues the first light beam and/or the second light beam；The detecting module includes the first detecting module, first detection
Module receives first interference fringe and/or second interference fringe；
The first light beam that the first light source issues be divided by the beam splitter be emitted to device under test surface portion and emit to
The part of reference unit, by controlling the photoswitch before the reference unit is arranged in so as to absorb described emit to reference list
The part of member.
4. 3 D detection method according to claim 1, which is characterized in that described to be determined according to first interference fringe
The thickness of the transparent film layer on the device under test surface includes:
Detecting module is according to first interference fringe, and recording first fringe intensity, maximum occur corresponding described
At least two wavelength Xs of the first light beam1、λ2；
Calculated and met using alternative manner | M λ1-Nλ2Positive integer M, N of | < ξ, and makeIt is minimized correspondence
Thickness of the h as transparent film layer, wherein ξ is default tolerance, and p=1,2, n be the refractive index of transparent film layer.
5. 3 D detection method according to claim 4, which is characterized in that according to second interference fringe and described
The three dimensional detection that the thickness of bright film layer carries out the device under test surface includes:
The height of the plane of reference of the device under test surface relative to the reference unit is determined according to the following formula:
I=| A1exp(ik2Δz)+A2exp(ik2(Δz+nh))+Bexp(iksinθx)|2；Wherein, I indicates the detection mould
Second fringe intensity of the test surface of block, A1Indicate the reflection related coefficient of transparent film layer upper surface, A2Indicate transparent film layer
Related coefficient is reflected in lower surface, and n indicates the refractive index of transparent film layer, and h indicates that transparent film layer thickness, k=2 π/λ, λ indicate light
Wavelength, Δ z indicate the difference in height on device under test surface and the plane of reference, and θ indicates the third light beam and ginseng of device under test surface reflection
Examine the angle of light beam.
6. a kind of three-dimensional detection device, device under test surface is formed with transparent film layer characterized by comprising
Light source module for issuing the first light beam of Wavelength tunable, and adjusts the wavelength of first light beam, first light beam
Be at least partly emitted to the device under test surface, the part of first beam emissions to device under test surface is respectively in institute
The upper and lower surfaces for stating transparent film layer reflect；
Detecting module, it is described for receiving the first light beam reflected respectively by the upper and lower surfaces of the transparent film layer
The first light beam that the upper and lower surfaces of bright film layer reflect respectively is interfered and is generated in the test surface of the detecting module
First interference fringe determines the thickness of the transparent film layer on device under test surface according to first interference fringe；
Light source module is also used to issue the second light beam, and will be in second beam emissions to beam splitter；
Beam splitter, for being divided second light beam for third light beam and the 4th light beam, the third beam orthogonal is emitted to
Device under test surface, the 4th beam emissions to reference unit；
Reference unit, for the 4th light beam to be converted to reference beam, the reference beam is emitted to through the beam splitter
Detecting module；
The detecting module is also used to receive the reference beam, and after the device under test surface reflection, through described point
The third light beam of beam mirror transmission, the third light beam transmitted through the beam splitter and the reference beam are in the detecting module
Test surface interfere and generate the second interference fringe, according to the thickness of second interference fringe and the transparent film layer into
The three dimensional detection on the row device under test surface.
7. three-dimensional detection device according to claim 6, which is characterized in that the light source module includes first light source and
Two light sources, the first light source issue the first light beam, and the second light source issues the second light beam；The detecting module includes first
Detecting module and the second detecting module, first detecting module receive first interference fringe, second detecting module
Receive second interference fringe.
8. three-dimensional detection device according to claim 6, which is characterized in that the light source module includes first light source, institute
It states first light source and issues the first light beam and/or the second light beam；The detecting module includes the first detecting module, first detection
Module receives first interference fringe and/or second interference fringe；Further include:
Photoswitch, the first light beam for first light source sending is divided by the beam splitter is emitted to device under test surface element
Point and when emitting to the part of reference unit, absorb the part emitted to reference unit.
9. three-dimensional detection device according to claim 6, which is characterized in that the detecting module include photodetector and
Computing unit；
The photodetector is for receiving first interference fringe and/or second interference fringe；
Thickness and/or the device under test surface of the computing unit for calculating the transparent film layer are relative to the reference
The height of the plane of reference of unit.
10. three-dimensional detection device according to claim 9, which is characterized in that the computing unit is specifically used for:
According to received first interference fringe of the photodetector, records first fringe intensity and occur greatly
It is worth at least two wavelength Xs of the corresponding light source module output1、λ2；
Calculated and met using alternative manner | M λ1-Nλ2Positive integer M, N of | < ξ, and makeIt is minimized correspondence
Thickness of the h as transparent film layer, wherein ξ is default tolerance, and p=1,2, n be the refractive index of transparent film layer.
11. three-dimensional detection device according to claim 9, which is characterized in that the computing unit is also used to:
The height of the plane of reference of the device under test surface relative to the reference unit is determined according to the following formula:
I=| A1exp(ik2Δz)+A2exp(ik2(Δz+nh))+Bexp(iksinθx)|2；Wherein I indicates the detecting module
Test surface the second fringe intensity, A1Indicate the reflection related coefficient of transparent film layer upper surface, A2It indicates under transparent film layer
Surface reflection related coefficient, n indicate the refractive index of transparent film layer, and h indicates that transparent film layer thickness, k=2 π/λ, λ indicate the wave of light
Long, Δ z indicates the difference in height on device under test surface and the plane of reference, and θ indicates third light beam and the reference of device under test surface reflection
The angle of light beam.
12. three-dimensional detection device according to claim 9, which is characterized in that the photodetector is complementary metal oxygen
Compound semiconductor or ccd image sensor.
13. three-dimensional detection device according to claim 7, which is characterized in that the first light source and/or second light source are
Optical parametric oscillator laser, the signal light and ideler frequency light of the optical parametric oscillator laser output wavelength consecutive variations.
14. three-dimensional detection device according to claim 8, which is characterized in that the first light source is optical parametric oscillator
Laser, the signal light and ideler frequency light of the optical parametric oscillator laser output wavelength consecutive variations.
15. three-dimensional detection device described in 3 or 14 according to claim 1, which is characterized in that the optical parametric oscillator laser
Output wavelength range is 450~900nm.
16. three-dimensional detection device according to claim 8, which is characterized in that the photoswitch is optical shutter, and the light is fast
Door absorbs first beam emissions to the part of reference unit for closing when measuring the transparent film layer thickness；
It is opened when carrying out the three dimensional detection on the device under test surface, penetrates the 4th light beam and the reference beam.
17. three-dimensional detection device according to claim 6, which is characterized in that the reference unit is reflecting mirror, described anti-
Penetrating between mirror surface and the device under test surface has default angle.
18. according to claim 8~14,16~17 any three-dimensional detection devices, which is characterized in that further include amplification object
Mirror, the enlarging objective is between the beam splitter and the device under test surface.
19. three-dimensional detection device according to claim 18, which is characterized in that it further include reflecting mirror and illuminating lens group,
The reflecting mirror is arranged between the light source module and the illuminating lens group, and first for issuing the light source module
In beam emissions to the illuminating lens group, the illuminating lens group is arranged between the reflecting mirror and the beam splitter.
20. three-dimensional detection device according to claim 19, which is characterized in that further include Guan Jing, be located at the beam splitter
Between the detecting module, for collecting the light beam of detecting module described in directive.
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