CN110048591A - A kind of S3R shunts immediate current suppression circuit and method - Google Patents
A kind of S3R shunts immediate current suppression circuit and method Download PDFInfo
- Publication number
- CN110048591A CN110048591A CN201910265752.3A CN201910265752A CN110048591A CN 110048591 A CN110048591 A CN 110048591A CN 201910265752 A CN201910265752 A CN 201910265752A CN 110048591 A CN110048591 A CN 110048591A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/322—Means for rapidly discharging a capacitor of the converter for protecting electrical components or for preventing electrical shock
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The present invention provides a kind of S3R to shunt immediate current suppression circuit, including lead inductance LH, diode D1, metal-oxide-semiconductor M1, sampling resistor Rsen and shunt driver, the lead inductance LHOne end connect with the anode of the diode D1, the pole D of the metal-oxide-semiconductor M1 is connected between the anode of the lead inductance, diode D1, the pole G of the metal-oxide-semiconductor M1 is connect with the shunting driver, and the pole S of the metal-oxide-semiconductor M1 is connect with one end of the sampling resistor Rsen.The present invention also provides a kind of S3R to shunt immediate current suppressing method.The beneficial effects of the present invention are: detecting shunt current by sampling resistor Rsen, and it controls metal-oxide-semiconductor M1 and opens shutdown to reach cut-off current in predetermined value purpose below, realize switching regulator current limliting, the heat that current spike generates is distributed in several periods by the current limliting of this mode, and can achieve, which reduces MOS, is averaged the purpose of heat waste.
Description
Technical field
The present invention relates to current suppressing circuits more particularly to a kind of S3R to shunt immediate current suppression circuit and method.
Background technique
Energy in satellite system is mainly derived from solar array.In the past, due to by limitation of the technology, silicon materials
Solar battery is uniquely to select.And silicon materials solar battery volume and weight is all bigger, therefore high-power spaceborne
Application needs the novel solar battery for being more able to satisfy demand.In last century the nineties, the multi-junction gallium arsenide sun
Energy battery is of concern rapidly because of its better efficiency and irradiation tolerance.Present multi-junction gallium arsenide heliotechnics exists
Space field has obtained good confirmation, and especially three-junction gallium arsenide technology, efficiency is up to 28%, compared to silicon materials about 18%
Efficiency, reduce considerable volume.However compared to silicon materials, the problem of three-junction gallium arsenide is that parasitic capacitance is larger,
In traditional S3R type DIRECT ENERGY transmission architecture, high parasitic capacitance can be put over the ground when S3R isocon is connected by isocon
Electricity increases the loss of isocon, the current spike for needing to prevent parasitic capacitance discharge from generating using current limiting unit in circuit.
The mode of the current limliting of S3R is mainly the active and passive mode combined at present, what passive current limit was realized
The mode predominantly series inductance in the input line of SA realizes, active electric current limitation, passes through sampling resistor and detects S3R and shunts electricity
It flows and will test signal and be input in figure in IMAX CONTROL DRIVER module, the voltage that module can control MOSFET makes MOS
In linear zone to reach limitation electric current in predetermined value purpose below, such current-limiting mode increases MOS work linear for work
The time in area consumes the spike of parasitic capacitance generation, the heat that this mode can generate current spike by MOSFET fever
It is discharged in quantity set, when electric current is larger, MOSFET can relatively scald, and need to allow dispersion by way of paralleling MOS in large-power occasions
Heat help is radiated.
Summary of the invention
In order to solve the problems in the prior art, the present invention provides a kind of S3R to shunt immediate current suppression circuit and side
Method.
The present invention provides a kind of S3R to shunt immediate current suppression circuit, including lead inductance LH, diode D1, metal-oxide-semiconductor
M1, sampling resistor Rsen and shunting driver, the lead inductance LHOne end connect with the anode of the diode D1, it is described
The pole D of metal-oxide-semiconductor M1 is connected between the anode of the lead inductance, diode D1, the pole G of the metal-oxide-semiconductor M1 and the shunting
Driver connection, the pole S of the metal-oxide-semiconductor M1 are connect with one end of the sampling resistor Rsen, and the sampling resistor Rsen's is another
One end ground connection, the both ends of the sampling resistor Rsen connect with the shunting driver respectively, are detected by sampling resistor Rsen
Shunt current, and control metal-oxide-semiconductor M1 and open shutdown to reach cut-off current in predetermined value purpose below, realize switching regulator limit
Stream.
As a further improvement of the present invention, the S3R shunts immediate current suppression circuit and only uses single metal-oxide-semiconductor.
As a further improvement of the present invention, it further includes current limiting driver that the S3R, which shunts immediate current suppression circuit, institute
The both ends for stating sampling resistor Rsen pass through the current limiting driver respectively and connect with the shunting driver.
As a further improvement of the present invention, it further includes diode D2, capacitor that the S3R, which shunts immediate current suppression circuit,
CSAWith current source ISA, the current source ISAOne end ground connection, the other end connect with the anode of the diode D2, the capacitor
CSAOne end ground connection, the other end connect with the anode of the diode D2, the lead inductance LHThe other end and two pole
The cathode of pipe D2 connects.
The present invention also provides a kind of S3R to shunt immediate current suppressing method, shunts immediate current suppression circuit with S3R and is
Basis carries out following switching regulator current limliting: flowing through the current spike of metal-oxide-semiconductor M1 using sampling resistor Rsen acquisition, and by itself and limit
Current limit threshold benchmark is compared in stream driver, if current spike is more than current limit threshold benchmark, current limiting driver is forced to draw
Low shunting driver, prevents electric current from continuing to rise.
As a further improvement of the present invention, driving is dragged down several times until current spike is no more than limit within a period
Flow threshold reference.
The beneficial effects of the present invention are: through the above scheme, detecting shunt current by sampling resistor Rsen, and control
Metal-oxide-semiconductor M1 opens shutdown to reach cut-off current in predetermined value purpose below, realizes switching regulator current limliting, the current limliting of this mode
The heat that current spike generates was distributed in several periods, can achieve, which reduces MOS, is averaged the purpose of heat waste.
Detailed description of the invention
Fig. 1 is the schematic diagram that a kind of S3R of the present invention shunts immediate current suppression circuit.
Fig. 2 is another schematic diagram that a kind of S3R of the present invention shunts immediate current suppression circuit.
Fig. 3 is driving and the current spike schematic diagram that a kind of S3R of the present invention shunts immediate current suppression circuit.
Specific embodiment
The invention will be further described for explanation and specific embodiment with reference to the accompanying drawing.
As shown in Figure 1 to Figure 3, a kind of S3R shunts immediate current suppression circuit, including lead inductance LHIt shunts and adjusts with sequence
It economizes on electricity road (S3R), sequence shunt regulating circuit (S3R) includes diode D1, metal-oxide-semiconductor M1, sampling resistor Rsen and shunts driving
Device (IMAX CONTROL DRIVER), the lead inductance LHOne end connect with the anode of the diode D1, the MOS
The pole D (drain electrode) of pipe M1 is connected between the anode of the lead inductance, diode D1, the pole G (grid) of the metal-oxide-semiconductor M1 with
The shunting driver connection, the pole S (source electrode) of the metal-oxide-semiconductor M1 is connect with one end of the sampling resistor Rsen, described to adopt
The other end of sample resistance Rsen is grounded, and the both ends of the sampling resistor Rsen are connect with the shunting driver respectively, by adopting
Sample resistance Rsen detects shunt current, and controls metal-oxide-semiconductor M1 and open shutdown to reach cut-off current in predetermined value purpose below,
Realize switching regulator current limliting.
As shown in Figure 1 to Figure 3, the sequence shunt regulating circuit (S3R) that the S3R shunts immediate current suppression circuit only makes
With single metal-oxide-semiconductor.
As shown in Figure 1 to Figure 3, it further includes current limiting driver that the S3R, which shunts immediate current suppression circuit, the sampling electricity
The both ends of resistance Rsen pass through the current limiting driver respectively and connect with the shunting driver.
As shown in Figure 1 to Figure 3, it further includes diode D2, capacitor C that the S3R, which shunts immediate current suppression circuit,SAAnd electric current
Source ISA, the current source ISAOne end ground connection, the other end connect with the anode of the diode D2, the capacitor CSAOne end
Ground connection, the other end are connect with the anode of the diode D2, the lead inductance LHThe other end and the diode D2 yin
Pole connection.
In order to prevent solar battery cell array parasitic capacitance discharge over the ground generation high current damage S3R, in the drive of S3R
Dynamic upper increase current-limiting function circuit, the linear zone current limliting used on most of PCU are to use current mirror acquisition to shunt MOS to lead
The electric current shunted over the ground when logical, and by the Miller plateau time of feedback growth MOS, inhibit parasitic electricity using MOS linear zone
Hold the current spike to discharge over the ground.
Switch current-limiting mode acquires the current spike for flowing through MOS as shown in sampling resistor Rsen in Fig. 2 using current mirror, and
It is compared with current limit threshold benchmark in current limliting driving, current limliting driving can be forced to draw if current spike is more than current limit threshold
Low shunting driving, prevents electric current from continuing to rise, and logic circuit can drag down driving for several times until electric current is less than limit within a period
Threshold value is flowed, as shown in Figure 3.
As shown in Figure 1 to Figure 3, the present invention also provides a kind of S3R to shunt immediate current suppressing method, shunts wink with S3R
Between based on current suppressing circuit, carry out following switching regulator current limliting: flowing through the electric current of metal-oxide-semiconductor M1 using sampling resistor Rsen acquisition
Spike, and it is compared with current limit threshold benchmark in current limiting driver, if current spike is more than current limit threshold benchmark, limit
Stream driver pressure drags down shunting driver, prevents electric current from continuing to rise, drags down driving several times until electricity within a period
It flows spike and is no more than current limit threshold benchmark.
A kind of S3R provided by the invention shunts immediate current suppression circuit and method, new current-limiting mode is provided, in original
It is improved on the basis of current limit circuit, linear zone current limliting is changed to switching regulator current limliting, detected by sampling resistor Rsen
The shunt current of S3R, and control metal-oxide-semiconductor M1 driving and open shutdown to reach cut-off current in predetermined value purpose below.It is this
The heat that current spike generates is distributed in several periods by the current limliting of mode, and can achieve, which reduces MOS, is averaged the purpose of heat waste,
Since lower power consumption can be as shown in Figure 1 using single MOS in large-power occasions.
A kind of S3R provided by the invention shunts immediate current suppression circuit and method, has the advantage that
1. inhibiting the calorific value generated when current spike smaller compared to old current-limiting mode
2. selectable device is more under same power grade, the reliability in parallel that increases is not needed under same power grade and is dropped
The low cost power density of power supply.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (6)
1. a kind of S3R shunts immediate current suppression circuit, it is characterised in that: including lead inductance LH, diode D1, metal-oxide-semiconductor M1,
Sampling resistor Rsen and shunting driver, the lead inductance LHOne end connect with the anode of the diode D1, the MOS
The pole D of pipe M1 is connected between the anode of the lead inductance, diode D1, and the pole G of the metal-oxide-semiconductor M1 and the shunting drive
Device connection, the pole S of the metal-oxide-semiconductor M1 are connect with one end of the sampling resistor Rsen, the other end of the sampling resistor Rsen
Ground connection, the both ends of the sampling resistor Rsen are connect with the shunting driver respectively, are detected and are shunted by sampling resistor Rsen
Electric current, and control metal-oxide-semiconductor M1 and open shutdown to reach cut-off current in predetermined value purpose below, realize switching regulator current limliting.
2. S3R according to claim 1 shunts immediate current suppression circuit, it is characterised in that: the S3R shunts moment electricity
Stream suppression circuit only uses single metal-oxide-semiconductor.
3. S3R according to claim 1 shunts immediate current suppression circuit, it is characterised in that: the S3R shunts moment electricity
Flow suppression circuit further include current limiting driver, the both ends of the sampling resistor Rsen pass through respectively the current limiting driver with it is described
Shunt driver connection.
4. S3R according to claim 1 shunts immediate current suppression circuit, it is characterised in that: the S3R shunts moment electricity
Flowing suppression circuit further includes diode D2, capacitor CSAWith current source ISA, the current source ISAOne end ground connection, the other end and institute
State the anode connection of diode D2, the capacitor CSAOne end ground connection, the other end is connect with the anode of the diode D2, described
Lead inductance LHThe other end connect with the cathode of the diode D2.
5. a kind of S3R shunts immediate current suppressing method, it is characterised in that: shunt immediate current with S3R as claimed in claim 3
Based on suppression circuit, following switching regulator current limliting is carried out: the current spike of metal-oxide-semiconductor M1 is flowed through using sampling resistor Rsen acquisition,
And be compared it with current limit threshold benchmark in current limiting driver, if current spike is more than current limit threshold benchmark, current limliting is driven
Dynamic device pressure drags down shunting driver, prevents electric current from continuing to rise.
6. S3R according to claim 5 shunts immediate current suppressing method, it is characterised in that: will driving within a period
It drags down several times until current spike is no more than current limit threshold benchmark.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910265752.3A CN110048591A (en) | 2019-04-03 | 2019-04-03 | A kind of S3R shunts immediate current suppression circuit and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910265752.3A CN110048591A (en) | 2019-04-03 | 2019-04-03 | A kind of S3R shunts immediate current suppression circuit and method |
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| Publication Number | Publication Date |
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| CN110048591A true CN110048591A (en) | 2019-07-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910265752.3A Pending CN110048591A (en) | 2019-04-03 | 2019-04-03 | A kind of S3R shunts immediate current suppression circuit and method |
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| CN (1) | CN110048591A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110927418A (en) * | 2019-12-12 | 2020-03-27 | 深圳市航天新源科技有限公司 | Shunt circuit based on switch current-limiting principle and system thereof |
| CN112421941A (en) * | 2020-10-26 | 2021-02-26 | 上海空间电源研究所 | Solar array shunting adjustment peak current suppression circuit for space |
| CN113315106A (en) * | 2021-07-07 | 2021-08-27 | 上海空间电源研究所 | Spacecraft power supply junction capacitance suppression control system and control method thereof |
| CN113791266A (en) * | 2021-10-09 | 2021-12-14 | 富芯微电子有限公司 | MOSFET current detection device |
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| US5444358A (en) * | 1993-03-04 | 1995-08-22 | Alcatel Bell-Sdt, S.A. | Power supply shunt regulator with current limitation circuit therein |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110927418A (en) * | 2019-12-12 | 2020-03-27 | 深圳市航天新源科技有限公司 | Shunt circuit based on switch current-limiting principle and system thereof |
| CN110927418B (en) * | 2019-12-12 | 2022-05-03 | 深圳市航天新源科技有限公司 | Shunt circuit based on switch current-limiting principle and system thereof |
| CN112421941A (en) * | 2020-10-26 | 2021-02-26 | 上海空间电源研究所 | Solar array shunting adjustment peak current suppression circuit for space |
| CN113315106A (en) * | 2021-07-07 | 2021-08-27 | 上海空间电源研究所 | Spacecraft power supply junction capacitance suppression control system and control method thereof |
| CN113791266A (en) * | 2021-10-09 | 2021-12-14 | 富芯微电子有限公司 | MOSFET current detection device |
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Application publication date: 20190723 |