CN110010789A - Organic light emitting diode display - Google Patents
Organic light emitting diode display Download PDFInfo
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- CN110010789A CN110010789A CN201811547558.6A CN201811547558A CN110010789A CN 110010789 A CN110010789 A CN 110010789A CN 201811547558 A CN201811547558 A CN 201811547558A CN 110010789 A CN110010789 A CN 110010789A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/822—Cathodes characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
A kind of organic LED display device, comprising: substrate, the substrate include a plurality of pixel regions, and each pixel region in a plurality of pixel regions includes light emitting region and the non-luminous region around light emitting region;A plurality of scattering parts, a plurality of scattering parts are disposed on the substrate corresponding to light emitting region and are separated from each other;First external coating, first external coating are arranged on a plurality of scattering parts and including a plurality of concave portions, and a plurality of concave portions correspond respectively to a plurality of scattering parts;First electrode, the first electrode are arranged on the first external coating in each pixel region in a plurality of pixel regions;And it is sequentially positioned at organic luminous layer and second electrode in first electrode.
Description
Cross reference to related applications
Submit in South Korea South Korea patent application the 10-2017-0175467th that this application claims on December 19th, 2017
Priority and right, entire contents are incorporated herein by reference for all mesh as fully expounded herein
's.
Technical field
The present invention relates to organic LED display devices, and imitate more particularly, to the light extraction with raising
The organic LED display device of rate.
Background technique
Recently, with the arrival of information-intensive society, with to the emerging of the information display for handling and showing bulk information
The increase of interest and the demand to portable information media, field of display rapidly develop.It therefore, it has been developed to various frivolous flat
Plate display device.
As the example of panel display apparatus, there are liquid crystal display (LCD) device, plasma display panels (PDP) to fill
It sets, field emission display (FED) device, electroluminance display (ELD) device, Organic Light Emitting Diode (OLED) display device etc..
Panel display apparatus shows excellent characteristic being thinned, mitigate and reduce its power consumption, therefore rapidly instead of traditional
Cathode-ray tube (CRT) display.
In panel display apparatus, OLED display is emissive type device and does not need as non-spontaneous light type
Back light unit used in the LCD device of device.As a result, OLED display has frivolous profile.
In addition, OLED display has the advantage in visual angle, contrast and power consumption compared with LCD device.In addition,
OLED display can be driven with low direct current (DC) voltage and have rapid response speed.Further, since OLED display dress
The internal element set has solid phase, therefore OLED display can be used with the high-durability to external impact and with wide
Temperature range.
Specifically, it is manufactured due to OLED display by simple technique, it can be with compared with traditional LCD device
Reduce manufacturing cost.
OLED display is the emissive type device luminous by light emitting diode (LED).LED is sent out by organic electroluminescence
Optical phenomenon shines.
Fig. 1 is the band figure for showing the LED with the principle of luminosity based on organic electroluminescent phenomenon.
As shown, LED 10 includes anode 21, cathode 25 and the organic light emission being arranged between anode 21 and cathode 25
Layer.Organic luminous layer includes hole transmission layer (HTL) 33, electron transfer layer (ETL) 35 and between HTL 33 and ETL 35
Luminous material layer (EML) 40.
In order to improve luminous efficiency, hole injection layer (HIL) 37 is provided between anode 21 and HTL 33, and in yin
Electron injecting layer (EIL) 39 is provided between pole 25 and ETL 35.
In LED 10, when positive voltage and negative voltage are applied separately to anode 21 and cathode 25, the hole of anode 21 and
The electronics of cathode 25 is transferred to EML 40 to form exciton.When exciton transits to ground state from excitation state, generated by EML 40
Light simultaneously emits light in the form of visible light.
However, including LED 10 display device in, the light emitted from organic luminous layer pass through various parts and
While being emitted to outside, most of light is lost.Therefore, being emitted to the light outside OLED display is only from organic light emission
About the 20% of the light of layer transmitting.
It, can since the light quantity emitted from organic luminous layer increases according to the magnitude of current for being applied to OLED display
To further increase the brightness of OLED display by applying more current to organic luminous layer.However, in such case
Under, power consumption increases, and the service life of OLED display is also reduced.
The light extraction efficiency of OLED display is improved therefore, it is necessary to various researchs.
Summary of the invention
Therefore, the present invention relates to it is a kind of substantially eliminate due to caused by the limitation and disadvantage of the relevant technologies one or
Organic Light Emitting Diode (OLED) display device of more problems.
It is an object of the present invention to provide a kind of OLED displays that light extraction efficiency can be improved.
Other features and advantages of the present invention will be set forth in the description that follows, and partly aobvious and easy from description
See, or can practice through the invention carry out acquistion.These and other advantages of the invention will pass through written explanation and its power
Benefit require and attached drawing in the structure that particularly points out be achieved and obtained.
It is in order to achieve these and other advantages and purpose according to the present invention, as embodied herein and broadly described,
Organic LED display device includes: substrate, and the substrate includes a plurality of pixel regions, in a plurality of pixel regions
Each pixel region includes light emitting region and the non-luminous region around light emitting region;A plurality of scattering parts are described a plurality of scattered
The portion of penetrating is disposed on the substrate, and corresponding to light emitting region and is separated from each other;First external coating, the first external coating setting exist
On a plurality of scattering parts and including a plurality of concave portions, a plurality of concave portions correspond respectively to a plurality of scatterings
Portion;Each pixel region in a plurality of pixel regions on the first external coating is arranged in first electrode, the first electrode
In;And it is sequentially positioned at organic luminous layer and second electrode in first electrode.
It should be understood that foregoing general description and the following detailed description are all exemplary and illustrative, and it is intended to
Further explanation to claimed invention is provided.
Detailed description of the invention
Including attached drawing to provide a further understanding of the present invention, and attached drawing is incorporated and constitutes one of this specification
Point, attached drawing shows embodiment of the present invention, and is used to explain the principle of the present invention together with specification.
Fig. 1 is the band figure for showing the light emitting diode (LED) with the principle of luminosity based on organic electroluminescent phenomenon.
Fig. 2 is the signal for showing Organic Light Emitting Diode according to the first embodiment of the present invention (OLED) display device
Property sectional view.
Fig. 3 is the schematic diagram for showing the state that light is guided in the concave portion of lenticule.
Fig. 4 is the signal for showing the state that light is guided in OLED display according to the first embodiment of the present invention
Figure.
Fig. 5 be show the hole that is formed in the first external coating according to the first embodiment of the present invention and transparent electrode and
The figure of the shape of stomata.
Fig. 6 is the schematic plan view for showing the arragement construction of stomata and lenticule of first embodiment of the invention.
Fig. 7 is the signal for showing the state that light is guided in OLED display according to the second embodiment of the present invention
Figure.
Specific embodiment
It specific reference will be made to exemplary implementation scheme now, its example is shown in the drawings.It can be used through attached drawing identical
Appended drawing reference indicate the same or similar part.
[first embodiment]
Fig. 2 is show Organic Light Emitting Diode according to the first embodiment of the present invention (OLED) display schematic
Sectional view, Fig. 3 are the schematic diagrames for showing the state that light is guided in the concave portion of lenticule.
OLED display 100 according to the first embodiment of the present invention can be divided into according to the transmission direction of transmitting light
Top emission type and bottom emissive type.Describe bottom emissive type in an illustrative manner in this embodiment.
Each pixel region P can be defined as including: light emitting region EA, be provided with light emitting diode (LED) E with
Show image;And surround the non-luminous region of light emitting region EA (or around the EA of light emitting region).Non-luminous region may include
Zone switched TrA is arranged along the edge of light emitting region EA, and is formed with driving thin film transistor (TFT) DTr.
As shown, being formed with driving thereon in OLED display 100 according to the first embodiment of the present invention
The substrate 101 of thin film transistor (TFT) DTr and LED E are encapsulated by protective film 130.
In more detail, semiconductor layer 103 is provided in the Zone switched TrA of each pixel region P on the substrate 101.
Semiconductor layer 103 is made of silicon and the active area 103a including being disposed therein the heart partially as channel, and doped with
High concentration impurities and be arranged in active area 103a two sides source area 103b and drain region 103c.
Gate insulating layer 105 is provided on the upper surface of semiconductor layer 103.
Gate electrode 107 and the grid line (not shown) that extends in one direction are provided on gate insulating layer 105 with right
It should be in the active area 103a of semiconductor layer 103.
In addition, being provided with the first interlayer insulating film 109a on gate electrode 107 and grid line.In this case, first
Interlayer insulating film 109a and gate insulating layer 105 have the first and second semiconductor layer contact holes 116, to expose source area respectively
103b and drain region 103c.
Next, source electrode 110a and drain electrode 110b is separated from each other on the first interlayer insulating film 109a, and point
It Tong Guo not the first and second semiconductor layer contact holes 116 contact source area 103b and drain region 103c.
The second interlayer insulating film is provided on the first interlayer insulating film 109a and source electrode 110a and drain electrode 110b
109b。
In this case, source electrode 110a and drain electrode 110b, semiconductor layer 103, gate insulating layer 105 and gate electrode
107 constitute driving thin film transistor (TFT) DTr.
Although not shown in figures, data line is configured to intersect with grid line to limit pixel region P.It switchs thin
Film transistor (not shown) can have structure identical with driving thin film transistor (TFT) DTr and be connected to driving thin film transistor (TFT)
DTr。
In this embodiment, the driving thin film transistor (TFT) DTr with top gate structure is described by way of example,
Middle semiconductor layer 103 is formed as polysilicon layer or oxide semiconductor layer.As an alternative, driving thin film transistor (TFT) DTr can have
Bottom grating structure, wherein semiconductor layer 103 is formed as amorphous silicon layer.
Substrate 101 can be made of glass material.As an alternative, substrate 101 can be sub- by transparent plastic material such as polyamides
Amine material is made, and is flexible or flexible.In view of executing high-temperature deposition process to substrate 101, can preferably have
The polyimides of high-fire resistance.The whole surface of substrate 101 can be covered by least one buffer layer (not shown).
Driving thin film transistor (TFT) DTr in Zone switched TrA can have its threshold voltage by the characteristic of light shift.In order to
Such case is prevented, can also include the shading being arranged in below semiconductor layer 103 according to the OLED display 100 of the application
Layer (not shown).
Light shield layer (not shown) is arranged between substrate 101 and semiconductor layer 103, to stop to be incident on by substrate 101
Light on semiconductor layer 103 and make the variation of the threshold voltage of the transistor due to caused by exterior light minimize or prevent due to
The variation of the threshold voltage of transistor caused by exterior light.Light shield layer (not shown) can be covered by buffer layer (not shown).
The luminous zone that wavelength conversion layer 106 corresponds to each pixel region P is provided on the second interlayer insulating film 109b
Domain EA.
Wavelength conversion layer 106 include colour filter, the colour filter from the white light that LED E is emitted to substrate 101 transmission exist
The wavelength of color setting (color set) (color defined by or) at pixel region P.
In one example, wavelength conversion layer 106 can transmit red wavelength, green wavelength or blue wavelength.For example,
According in the OLED display 100 of the application, each unit pixel may include the first adjacent pixel region P to third picture
Plain region P.In this case, the wavelength conversion layer 106 being arranged in the first pixel region may include red color filter, if
The wavelength conversion layer 106 set in the second pixel region may include green color filter, and be arranged in third pixel region
Wavelength conversion layer 106 may include blue color filter.
Additionally, in the OLED display 100 according to the application, each unit pixel can also be including wherein non-shape
At the white pixel region for having wavelength conversion layer 106.
In another example, wavelength conversion layer 106 may include quantum dot, which has can be according to from LED
The white light that E is emitted to substrate 101 emits the size of the light of color setting at its pixel region P.Quantum dot can be by being selected from
In CdS, CdSe, CdTe, ZnS, ZnSe, GaAs, GaP, GaAs-P, Ga-Sb, InAs, InP, InSb, AlAs, AlP or AlSb
One or more of materials are formed.
For example, the wavelength conversion layer 106 of the first pixel region may include the quantum dot of CdSe or InP, the second pixel region
The wavelength conversion layer 106 in domain may include the quantum dot of CdZnSeS and the wavelength conversion layer 106 of third pixel region can be with
Quantum dot including ZnSe.OLED display 100 with the wavelength conversion layer 106 containing quantum dot can have high color again
Existing range.
In another example, wavelength conversion layer 106 may include the colour filter containing quantum dot.
Passivation layer 109c and the first external coating 210 are sequentially provided on wavelength conversion layer 106.First drain contact hole
117a is formed through passivation layer 109c, the first external coating 210 and the second interlayer insulating film 109b to expose drain electrode 110b
Upper surface.Transparent electrode 220 is provided on the upper surface of the first external coating 210.
Transparent electrode 220 is made of the metal oxide of such as indium tin oxide (ITO) or indium-zinc oxide (IZO), and
And there is plurality of holes 221, which is spaced apart at a predetermined distance from each other.
A plurality of stomatas 211 corresponding with plurality of holes 221 are formed in the first external coating 210.
The second external coating 230 is provided on the first external coating 210 and transparent electrode 220.Second external coating 230 has the
Two drain contact hole 117b, the second drain contact hole 117b are configured to the first drain electrode with the upper surface for exposing drain electrode 110b
Contact hole 117a connection.Transparent electrode 220 covered by the second external coating 230 and therefore in the second drain contact hole 117b not
Expose.
In this case, the surface of the second external coating 230 in the EA of light emitting region is configured such that a plurality of
Concave portion 233 and a plurality of convex portions 231 alternately form to constitute lenticule 235.More specifically, concave portion 233
Be arranged in at the position corresponding for the stomata 211 being formed in the first external coating 210.Convex portion 231 and recessed
Part 233 can be limited based on the inclination angle on the surface of the second external coating 230.In this respect, it is located at the maximum point in inclination angle
The part of top can be convex portion 231, and the part below the point of allowable angle of inclination can be concave portion
233。
OLED display 100 according to the first embodiment of the present invention has further by the second external coating 230
The light extraction efficiency of raising, the surface of the second external coating 230 are configured as constituting lenticule 235.
Therefore, in OLED display 100 according to the first embodiment of the present invention, pass through transparent electrode 220,
The configuration of one external coating 210 and stomata 211, be not extracted by outside and the light that is trapped in LED E can be extracted to it is outer
Portion, to improve light extraction efficiency.It this will be described in greater detail later.
First external coating 210 and the second external coating 230 can be made of the insulating materials of the refractive index with about 1.5.?
This respect, the first external coating 210 and the second external coating 230 can be by being selected from such as acrylic resin, epoxy resin, phenolic aldehyde tree
Rouge, polyamide-based resin, polyimide based resin, unsaturated polyester (UP) resinoid, polyphenylene resinoid, polyphenylene sulfide ethers tree
At least one of rouge, benzocyclobutene and photoresist are made.
First electrode 111 is provided on the second external coating 230.First electrode 111 is connected to driving thin film transistor (TFT) DTr
Drain electrode 110b, drain electrode 110b exposed by the first drain contact hole 117a and the second drain contact hole 117b, and the
One electrode 111 can be made of the material for example with opposite high work function, to form the anode of LED E.
First electrode 111 can be by the metal oxide materials of such as ITO or IZO, such as ZnO:Al and SnO2: the gold of Sb
Belong to and oxide material mixture or such as poly- (3 methyl thiophene), poly- [3,4- (ethylene -1,2)-thiophene] (PEDT),
The conducting polymer of polypyrrole and polyaniline is made.As an alternative, first electrode 111 can by carbon nanotube (CNT), graphene or
Silver nanowires is formed.
First electrode 111 is arranged at each pixel region P, and between the first electrode of adjacent pixel regions P 111
Dyke 119 can be set.
In other words, dyke 119 is arranged along the edge of each pixel region P.First electrode 111 is separated from each other, wherein dike
Boundary part of the portion 119 as each pixel region.
Dyke 119 can be made of the transparent insulation material of the refractive index with about 1.5.In this respect, dyke 119 can be with
By poly- selected from such as acrylic resin, epoxy resin, phenolic resin, polyamide-based resin, polyimide based resin, unsaturation
At least one of esters resin, polyphenylene resinoid, polyphenylene sulfide resinoid, benzocyclobutene and photoresist system
At.
Organic luminous layer 113 is provided in first electrode 111 and dyke 119.Organic luminous layer 113 can be formed as by
Single layer made of luminescent material.In order to improve luminous efficiency, organic luminous layer 113 can be formed as multilayer, including hole injection
Layer, hole transmission layer, luminous material layer, electron transfer layer and electron injecting layer.
The second electrode 115 as cathode is provided on the entire upper surface of organic luminous layer 113.
Second electrode 115 can be by having the material of opposite low work function to be made.Such as Ag can be used in second electrode 115
The first metal and such as Mg the second metal formed single-layer or multi-layer, and single layer can by the first metal and the second metal with
The alloy of estimated rate is made.
In OLED display 100, when first electrode 111 and second electrode 115 are applied corresponding voltage, come from
The hole of first electrode 111 and electronics from second electrode 115 are transferred to organic luminous layer 113 and form exciton, and
When exciton transits to ground state from excitation state, it is generated and transmitted by light.
In this case, the light of transmitting passes through transparent first electrode 111 and is output to outside, so that OLED display dress
Set 100 display images.
First electrode 111, organic luminous layer 113 and the second electrode 115 being sequentially positioned on the second external coating 230 are complete
Portion along at the surface for being formed in the second external coating 230 concave portion 233 and convex portion 231 be formed to have with second outside
The corresponding shape of the shape of coating 230.
The protective film 130 of form of film is formed with above driving thin film transistor (TFT) DTr and LED E, so that OLED is shown
Device 100 is encapsulated by protective film 130.
Into OLED display 100, protective film 130 may include at least two for external oxygen and moisture penetration in order to prevent
The inorganic protective film of a stacking.In this case, organic protective film can be preferably provided in two adjacent inorganic protections
Between film, to compensate the impact resistance of inorganic protective film.
In the structure that this organic protective film and inorganic protective film alternately repeatedly stack, moisture and oxygen in order to prevent
The side surface of organic protective film is penetrated into, organic protective film can be completely covered in inorganic protective film.
Therefore, OLED display 100 can prevent moisture and oxygen 100 from external penetration to OLED display in.
As described above, in OLED display 100 according to the first embodiment of the present invention, including concave portion
233 and the lenticule 235 of convex portion 231 be formed as the surface of the second external coating 230, to improve light extraction efficiency.
In other words, from the light that organic luminous layer 113 emits, since the lenticule 235 of the second external coating 230 passes through
To be less than that the angle of the cirtical angle of total reflection is advanced, multiple reflections to extract continuously are totally reflected and are trapped in organic luminous layer 113
Interior light, to improve external light emission efficiency.This improves the light extraction efficiencies of OLED display 100
Specifically, in OLED display 100 according to the first embodiment of the present invention, there are a plurality of stomatas
211 the first external coating 210 and transparent electrode 220 with plurality of holes 221 are arranged in passivation layer 109c and the second external coating
Between 230, the surface of the second external coating 230 is formed with lenticule 235, to further improve OLED display 100
Light extraction efficiency.
More specifically, in LED E, can be accounted for by the light that optical waveguide mode captures generated in organic luminous layer 113 it is complete
About the 60% to about 70% of portion's light, the optical waveguide mode by organic luminous layer 113 and metal layer (that is, first electrode 111 and
Second electrode 115) between interface formed surface plasma body portion constitute.
In other words, in LED E, the 60% to 70% of the light generated in organic luminous layer 113 is trapped in LED E
It is interior.
Therefore, in order to improve light extraction efficiency, as shown in figure 3, the second external coating 230 is formed with lenticule 235, therefore mention
High external light extraction efficiency.However, although light extraction efficiency is improved by lenticule 235, from organic luminous layer 113
The light of transmitting still may not be output to outside and may be trapped at the concave portion 233 of lenticule 235.
OLED display 100 according to the first embodiment of the present invention will be captured inside LED E by stomata 211
Light extraction to outside, to further increase light extraction efficiency.
Fig. 4 is the signal for showing the state that light is guided in OLED display according to the first embodiment of the present invention
Figure.
Referring to Fig. 4, the first external coating 210 and transparent electrode 220 are sequentially positioned to correspond on passivation layer 109c and shine
Region (EA of Fig. 2).The second external coating 230 for being formed with lenticule 235 is arranged in transparent electrode 220.Including first electrode
111, organic luminous layer 113 and the LED E of second electrode 115 are arranged on the second external coating 230.
First electrode 111, organic luminous layer 113 and second electrode 115 are all sequentially formed to follow the second external coating
230 surface configured with the lenticule 235 for including concave portion 233 and convex portion 231.
Hole 221 corresponding with the concave portion 233 of the second external coating 230 is formed in transparent electrode 220.Outside first
The stomata 211 in the hole 221 corresponding to transparent electrode 220 is formed in coating 210.
The refractive index of organic luminous layer 113 can be essentially identical with the refractive index of first electrode 111, therefore in organic light emission
The optical path of interface between layer 113 and first electrode 111, the light generated in organic luminous layer 113 may not change.
Organic luminous layer 113 and first electrode 111 can have 1.8 to 2.0 refractive index.
Since the first external coating 210 and the second external coating 230 have the refractive index of about 1.4 to about 1.6, when in organic light emission
When the light emitted in layer 113 passes through first electrode 111 and is extracted to the outside of substrate (the 101 of Fig. 2), in organic luminous layer
Interface of the light emitted in 113 between first electrode 111 and the second external coating 230 is totally reflected.
In this case, in the light of the interface total reflection between first electrode 111 and the second external coating 230, one
A little light L1 are extracted to the outside of substrate (the 101 of Fig. 2), and there is some light angle to be greater than the cirtical angle of total reflection and therefore
Be not extracted to the outside of substrate (the 101 of Fig. 2) and be trapped between the second external coating 230 and first electrode 111 or by
Capture is between first electrode 111 and second electrode 115.
In OLED display according to the first embodiment of the present invention (100 in Fig. 2), due to the second external coating
230 have lenticule 235, so light L2 and L3 that the interface between first electrode 111 and the second external coating 230 is totally reflected
In, due to the curved shape of the convex portion 231 of the second external coating 230, by being advanced with the angle for being less than the cirtical angle of total reflection
And light L2 is extracted the outside of substrate (101 in Fig. 2) by multiple reflections.
This improves light extraction efficiencies.
In the light L2 and L3 of interface total reflection between first electrode 111 and the second external coating 230, light L3 is advanced to
The concave portion 233 of second external coating 230.The light L3 for advancing to the concave portion 233 of two external coatings 230 is logical by multiple reflections
It crosses to be less than the angle of the cirtical angle of total reflection and travel across the hole 221 by transparent electrode 220 and the stomata of the first external coating 210
211 and be extracted to the outsides of substrate (101 in Fig. 2).
Therefore, because even if also improve light extraction efficiency at the concave portion 233 of lenticule 235, therefore OLED (figure
100 in 2) light extraction efficiency is further enhanced, and light is also equably extracted outside.
It is some in the light captured and being totally reflected by the interface between first electrode 111 and the second external coating 230
Transparent electrode 220 of the light L4 and L5 entirely through the refractive index with the refractive index greater than the second external coating 230.Across transparent
Interface of the light of electrode 220 between transparent electrode 220 and the first external coating 210 is totally reflected again.
In the light of interface total reflection between transparent electrode 220 and the first external coating 210, light L4 is extracted to substrate
The outside of (the 101 of Fig. 2), and light L5 has the angle greater than the cirtical angle of total reflection and is not therefore extracted to substrate (Fig. 2
101) outside, but be trapped between transparent electrode 220 and the first external coating 210.In this case, in transparent electricity
The light L5 of interface total reflection between pole 220 and the first external coating 210 is passed through critical to be less than total reflection by multiple reflections
The angle at angle travels across the stomata 211 of the first external coating 210 and is extracted to the outside of substrate (101 in Fig. 2).
About the arrangement relation between hole 221, stomata 211 and lenticule 235, the surface of the second external coating 230, which has, is handed over
The a plurality of concave portions 233 and a plurality of convex portions 231 being alternately arranged are to form lenticule 235.
The stomata 211 of the hole 221 of transparent electrode 220 and the first external coating 210 can be set recessed with lenticule 235
At the corresponding region in part 233.
In this case, the central point of each of hole 221 and stomata 211 is located at recessed with the second external coating 230
Enter at the corresponding position tip S of part 233.
The width d1 of stomata 211 can be less than the width of the concave portion 233 of lenticule 235, preferably maximum width D.
Since the width d1 of stomata 211 is less than the maximum width D of the concave portion 233 of lenticule 235, it is possible to pass through lenticule
235 further improve light extraction effect.
In this respect, when the width d1 of stomata 211 is greater than the maximum width D of the concave portion 233 of lenticule 235, from
The path that lenticule 235 extracts the light of the outside of substrate (the 101 of Fig. 2) may change, therefore light may not be extracted to base
It the outside of plate (the 101 of Fig. 2) and may be captured.
In this case, it is possible to which the reduction of light extraction efficiency occurs.
The width d1 that the stomata 211 of the first external coating 210 has been illustrated by way of example is greater than the hole of transparent electrode 220
221 width d2.As an alternative, the stomata 211 of the hole 221 of transparent electrode 220 and the first external coating 210 can be formed as second
Width having the same in the limit of the maximum width D of the concave portion 233 of external coating 230.
The stomata 211 of first external coating 210 can pass through transparent electrode 220 as mask by using transparent electrode 220
Hole 221 patterned to be formed.Therefore, transparent electrode 220 can have the light by capture inside the second external coating 230
It extracts the function of the first external coating 210 and there is the function of the mask as the stomata 211 for being used to form the first external coating 210
Energy.
Briefly describe the technique for forming the stomata 211 of the first external coating 210.Is sequentially formed on passivation layer 109c
One external coating 210, metal layer (not shown) and the second external coating 230.
Then, lenticule 235 is formed at the second external coating 230, then, part wet is carried out to metal layer (not shown)
Etching, to correspond to the concave portion 233 of lenticule 235.Therefore, hole is formed in the metal layer to form transparent electrode 220.
Hereafter, by using the hole 221 of transparent electrode 220 as opening, stomata 211 is formed in the first external coating 210.
Fig. 5 is the photo for showing the shape in the hole and stomata that are formed in the first external coating of the invention and transparent electrode.
Fig. 6 is the schematic plan view for showing the arragement construction of stomata and lenticule of the invention.
Referring to Fig. 5, shows stomata 211 and be formed in the first external coating 210 being arranged on passivation layer 109c, and hole
221 are formed in the transparent electrode 220 being set on the first external coating 210 to correspond to stomata 211.
As shown in fig. 6, the stomata 211 of the first external coating 210 is arranged to the concave portion 233 corresponding to lenticule 235.
In other words, as shown in fig. 6, a plurality of lenticules 235 are configured to correspond to each pixel region (P of Fig. 5)
Light emitting region EA.By alternately forming a plurality of concave portions 233 and and concave portion at the surface of the second external coating 230
The 233 a plurality of convex portions 231 being disposed adjacent are divided to form lenticule 235.
The convex portion 231 that the lenticule 235 when observing in the planes has been illustrated by way of example has round shape
Shape.As an alternative, convex portion 231 can have various global shapes, such as hexagon, hemispherical, half elliptic and quadrangle.
In this case, since the stomata 211 being formed in the first external coating 210 is configured to correspond to lenticule
235 concave portion 233, so stomata 211 can be formed in all areas other than the region for being formed with convex portion 231
In domain.
As described above, having in OLED display according to the first embodiment of the present invention (100 in Fig. 2)
First external coating 210 of a plurality of stomatas 211 and the transparent electrode 220 with plurality of holes 221 are arranged on passivation layer 109c
Between the second external coating 230, the surface of the second external coating 230 is formed with lenticule 235, shows to further increase OLED
The light extraction efficiency of device (100 in Fig. 2).
[the second embodiment]
Fig. 7 is the signal for showing the state that light is guided in OLED display according to the second embodiment of the present invention
Figure.
Referring to Fig. 7, a plurality of scattering pattern 300 and external coating 230 (its surface is formed with lenticule 235) setting are being passivated
It is corresponding with light emitting region (EA of Fig. 2) in a pixel region (P of Fig. 2) on layer 109c.Including first electrode 111, organic
Luminescent layer 113 and the LED E of second electrode 115 are arranged on external coating 230.
The surface sequence landform of first electrode 111, organic luminous layer 113 and second electrode 115 all along external coating 230
At.
In this case, scattering pattern 300 is arranged on passivation layer 109c and corresponds to the corresponding of external coating 230
Concave portion 233.By scattering pattern 300, the light L3 of the interface total reflection between first electrode 111 and external coating 230
In L4, some light for advancing to the concave portion 233 of external coating 230 are scattered, therefore are extracted to base by multiple reflections
The outside of plate (101 in Fig. 2).
Therefore, even if light extraction efficiency is also improved at the concave portion 233 of lenticule 235.
Scattering pattern 300 can be pattern respectively including scattering particles, and can be by being dispersed in scattering particles
It is formed in adhesive.
Scattering particles can be refractive index different from the particle of the refractive index of adhesive.Scattering particles can have about 1.0
To about 3.5 refractive index, for example, about 1.0 to about 2.0, about 1.2 to about 1.8, about 2.1 to about 3.5 or about 2.2 to about 3.0
Refractive index, and can have the average diameter of about 50nm to about 20000nm or about 100nm to about 5000nm.
Scattering particles can have such as spherical, ellipse, polyhedron shape and unbodied shape, but its shape does not have
Especially limitation.
For example, scattering particles may include organic material, such as polystyrene or derivatives thereof, acrylic resin or its spread out
Biology, organic siliconresin or derivatives thereof or novolac resin or derivatives thereof or inorganic material such as silica, oxidation
Aluminium, titanium oxide or zirconium oxide.
Scattering particles can be made of one of above-mentioned material or more.In addition, scattering particles can be formed as having
There is the particle of core shell shape or hollow shape.
Adhesive may include such as organic material, inorganic material or organic/inorganic combined material.Organic material can be
Hot or photo curable monomer, oligomeric or poly organic material, based on polyimides, the more resin (cardo of the card with fluorine ring
Resin), carbamate, epoxides, polyester or acrylate.Inorganic material can be Si oxide, silicon nitride, silicon
Oxynitride or polysiloxanes.
It can be by solidifying material with wet coating coating material, and with heating means, light illuminating method or sol-gel process
Material is to form scattering pattern 300.As an alternative, scattering pattern 300 can pass through such as chemical vapor deposition (CVD) or physical vapor
The deposition method or minute-pressure impression method of (PVD) method of deposition are formed.
The width d3 of scattering pattern 300 can be less than the maximum width D of the concave portion 233 of lenticule 235.Due to scattering
The width d3 of pattern 300 be less than lenticule 235 concave portion 233 maximum width D, it is possible to by lenticule 235 into
One step improves light extraction effect.
As described above, in OLED display according to the second embodiment of the present invention (100 in Fig. 2), due to
Scattering pattern 300 is formed in the concave portion 233 for corresponding to the external coating 230 with lenticule 235 on passivation layer 109c, institute
Even if can also be improved light extraction efficiency at the concave portion 233 of external coating 230, to further increase OLED display dress
Set the light extraction efficiency of (100 in Fig. 2).
It will be apparent to those skilled in the art that without departing from the spirit or scope of the present invention, Ke Yi
It carry out various modifications and changes in the present invention.Therefore, the present invention is directed to cover to fall into appended claims and its equivalent
Modifications and variations of the invention in range.
Claims (12)
1. a kind of organic LED display device, comprising:
Substrate, the substrate include a plurality of pixel regions, and each pixel region in a plurality of pixel regions includes hair
Light region and non-luminous region around the light emitting region;
A plurality of scattering parts, a plurality of scattering parts are arranged on the substrate, corresponding to the light emitting region and each other
It is spaced apart;
First external coating, first external coating are arranged on a plurality of scattering parts and including a plurality of concave portions,
A plurality of concave portions correspond respectively to a plurality of scattering parts;
First electrode, the first electrode be arranged on first external coating in each of described a plurality of pixel regions
In pixel region;And
The organic luminous layer and second electrode being sequentially positioned in the first electrode.
2. organic LED display device according to claim 1, wherein a plurality of scattering parts respectively include
A plurality of stomatas, and a plurality of stomatal limiting values are in the second external coating being arranged in below first external coating.
3. organic LED display device according to claim 2, further include setting first external coating with
Transparent electrode between second external coating, wherein the transparent electrode has plurality of holes, the plurality of holes is right respectively
A plurality of stomatas described in Ying Yu.
4. organic LED display device according to claim 3, wherein the stomata in a plurality of stomatas
Corresponding aperture in central point and the plurality of holes is positioned to and the point of the corresponding concave portion in a plurality of concave portions
It holds corresponding.
5. organic LED display device according to claim 3, wherein the transparent electrode is by indium tin oxide
Or the metal oxide of indium-zinc oxide is made.
6. organic LED display device according to claim 1, wherein a plurality of scattering parts respectively include
A plurality of scattering pattern, each scattering pattern in a plurality of scattering pattern includes scattering particles.
7. organic LED display device according to claim 1, wherein first external coating includes a plurality of
Convex portion, a plurality of convex portions and a plurality of concave portions are alternately arranged to have the table for forming lenticule
Face.
8. organic LED display device according to claim 1, wherein the scattering in a plurality of scattering parts
The width in portion is less than the maximum width of the corresponding concave portion in a plurality of concave portions.
9. organic LED display device according to claim 1, wherein every in a plurality of pixel regions
A pixel region includes the wavelength conversion layer between a plurality of scattering parts and the substrate.
10. organic LED display device according to claim 9, wherein every in a plurality of pixel regions
A pixel region includes driving thin film transistor (TFT).
11. organic LED display device according to claim 3, wherein stomata in a plurality of stomatas and
Corresponding aperture width having the same in the plurality of holes.
12. organic LED display device according to claim 7, wherein the first electrode, organic hair
Each of photosphere and the second electrode have the shape phase on the surface of lenticule with the formation with first external coating
Corresponding shape.
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TWI648879B (en) * | 2018-04-11 | 2019-01-21 | 友達光電股份有限公司 | Light-emitting element |
KR102622792B1 (en) * | 2018-08-30 | 2024-01-08 | 엘지디스플레이 주식회사 | Light emitting display device |
WO2020143025A1 (en) * | 2019-01-11 | 2020-07-16 | 京东方科技集团股份有限公司 | Flexible substrate, fabrication method therefor and display panel |
KR20210079007A (en) * | 2019-12-19 | 2021-06-29 | 엘지디스플레이 주식회사 | Organic Light Emitting Diode Display Device |
CN111430414A (en) * | 2020-03-31 | 2020-07-17 | 京东方科技集团股份有限公司 | O L ED display panel, preparation method and display device |
KR20230100167A (en) * | 2021-12-28 | 2023-07-05 | 엘지디스플레이 주식회사 | Display apparatus |
KR20230102609A (en) * | 2021-12-30 | 2023-07-07 | 엘지디스플레이 주식회사 | Display apparatus |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1784093A (en) * | 2004-11-29 | 2006-06-07 | 精工爱普生株式会社 | Transparent substrate, electro-optical device, image forming device and method for manufacturing electro-optical device |
CN102931208A (en) * | 2011-08-09 | 2013-02-13 | 三星显示有限公司 | Organic light-emitting display and method of manufacturing the same |
CN104617227A (en) * | 2013-11-05 | 2015-05-13 | 昆山国显光电有限公司 | Organic light emitting display device |
JP2015118761A (en) * | 2013-12-17 | 2015-06-25 | 株式会社ジャパンディスプレイ | Organic el display device and manufacturing method of the same |
US20150380466A1 (en) * | 2014-06-27 | 2015-12-31 | Lg Display Co., Ltd. | Organic light emitting display device and method for manufacturing the same |
JP2017103231A (en) * | 2015-11-30 | 2017-06-08 | エルジー ディスプレイ カンパニー リミテッド | Organic light emitting display device and method for manufacturing the same |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4791827B2 (en) * | 2006-01-13 | 2011-10-12 | 東芝モバイルディスプレイ株式会社 | Organic EL display device |
JP2011204645A (en) * | 2010-03-26 | 2011-10-13 | Panasonic Electric Works Co Ltd | Light-emitting device |
KR20120115841A (en) | 2011-04-11 | 2012-10-19 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
KR101407587B1 (en) | 2011-06-02 | 2014-06-13 | 삼성디스플레이 주식회사 | Organic light emitting display device and manufacturing method thereof |
WO2014099864A2 (en) | 2012-12-17 | 2014-06-26 | Nitto Denko Corporation | Light-emitting devices comprising emissive layer |
TW201517328A (en) * | 2013-10-25 | 2015-05-01 | Wintek Corp | Light-emitting diode structure |
KR20150077261A (en) * | 2013-12-27 | 2015-07-07 | 엘지디스플레이 주식회사 | Organic light emitting display device and method of manufacturing the same |
JP6584099B2 (en) * | 2015-03-10 | 2019-10-02 | 株式会社ジャパンディスプレイ | Display device and manufacturing method thereof |
US10008697B2 (en) * | 2015-08-31 | 2018-06-26 | Lg Display Co., Ltd. | Organic light emitting diode display device |
KR101818423B1 (en) | 2015-09-23 | 2018-01-16 | 엘지디스플레이 주식회사 | Organic Light Emitting Diode Display Device |
KR20170052455A (en) * | 2015-10-30 | 2017-05-12 | 엘지디스플레이 주식회사 | Organic Light Emitting Diode Display Device |
KR102317419B1 (en) * | 2017-06-30 | 2021-10-25 | 엘지디스플레이 주식회사 | Light emitting display device |
KR102459045B1 (en) * | 2017-11-30 | 2022-10-25 | 엘지디스플레이 주식회사 | Electroluminescent Display Device |
-
2017
- 2017-12-19 KR KR1020170175467A patent/KR102540135B1/en active IP Right Grant
-
2018
- 2018-11-29 TW TW107142774A patent/TWI695364B/en active
- 2018-12-05 JP JP2018228117A patent/JP6710263B2/en active Active
- 2018-12-06 US US16/212,484 patent/US10957877B2/en active Active
- 2018-12-18 CN CN201811547558.6A patent/CN110010789B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1784093A (en) * | 2004-11-29 | 2006-06-07 | 精工爱普生株式会社 | Transparent substrate, electro-optical device, image forming device and method for manufacturing electro-optical device |
CN102931208A (en) * | 2011-08-09 | 2013-02-13 | 三星显示有限公司 | Organic light-emitting display and method of manufacturing the same |
CN104617227A (en) * | 2013-11-05 | 2015-05-13 | 昆山国显光电有限公司 | Organic light emitting display device |
JP2015118761A (en) * | 2013-12-17 | 2015-06-25 | 株式会社ジャパンディスプレイ | Organic el display device and manufacturing method of the same |
US20150380466A1 (en) * | 2014-06-27 | 2015-12-31 | Lg Display Co., Ltd. | Organic light emitting display device and method for manufacturing the same |
JP2017103231A (en) * | 2015-11-30 | 2017-06-08 | エルジー ディスプレイ カンパニー リミテッド | Organic light emitting display device and method for manufacturing the same |
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TW201928932A (en) | 2019-07-16 |
TWI695364B (en) | 2020-06-01 |
US20190189966A1 (en) | 2019-06-20 |
JP6710263B2 (en) | 2020-06-17 |
KR20190074088A (en) | 2019-06-27 |
JP2019110118A (en) | 2019-07-04 |
KR102540135B1 (en) | 2023-06-02 |
US10957877B2 (en) | 2021-03-23 |
CN110010789B (en) | 2021-08-10 |
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