CN118764791A - Sensor and electronic device - Google Patents

Abstract

The invention provides a sensor and electronic equipment, which belong to the technical field of sensors, wherein the sensor comprises a substrate, a MEMS chip and a piezoelectric material layer which are respectively arranged on the substrate, wherein the piezoelectric material layer can deform under the deformation of the substrate and output voltage information; and the ASIC chip is respectively connected with the piezoelectric material layer and the MEMS chip in a signal way, and is used for receiving the voltage information, regulating the bias voltage of the MEMS chip according to the voltage information, regulating the stress of the vibrating diaphragm of the MEMS chip through regulating the bias voltage so as to reduce or offset the change of the stress of the vibrating diaphragm of the MEMS chip caused by the deformation of the substrate, so that the change of the stress of the vibrating diaphragm is reduced or not changed, and the sensitivity of the sensor is ensured.

Description

Sensor and electronic device

Technical Field

The present disclosure relates to sensors, and particularly to a sensor and an electronic device.

Background

After the sensor is mounted on the whole machine, the sensitivity of the sensor is reduced.

In view of the foregoing, there is a need for a new sensor and electronic device that addresses or at least alleviates the above-mentioned technical drawbacks.

Disclosure of Invention

The invention mainly aims to provide a sensor and electronic equipment, and aims to solve the technical problem that sensitivity is reduced after the sensor is mounted on a whole machine in the prior art.

To achieve the above object, according to one aspect of the present invention, there is provided a sensor comprising:

A substrate;

a MEMS chip mounted on the substrate;

the piezoelectric material layer is arranged on the substrate, and can deform under the deformation of the substrate and output voltage information;

and the ASIC chip is respectively connected with the piezoelectric material layer and the MEMS chip in a signal way, and is used for receiving the voltage information and adjusting the bias voltage of the MEMS chip according to the voltage information.

In some embodiments, the voltage information is generated by polarization of two surfaces of the piezoelectric material layer after deformation, and the voltage information comprises a voltage magnitude and a voltage direction; the ASIC chip adjusts the stress of the diaphragm of the MEMS chip by adjusting the bias voltage of the MEMS chip so as to reduce or counteract the change of the stress of the diaphragm of the MEMS chip caused by the deformation of the substrate.

In some embodiments, the layer of piezoelectric material comprises a piezoelectric ceramic sheet, or the layer of piezoelectric material comprises quartz.

In some embodiments, a cavity is disposed within the substrate, and the layer of piezoelectric material is embedded within the cavity.

In some embodiments, the sensor further includes a conductive member, one end of the conductive member is electrically connected to the piezoelectric material layer, the other end of the conductive member extends out of the substrate, and the ASIC chip is electrically connected to the other end of the conductive member.

In some embodiments, the substrate is a glass substrate.

In some embodiments, the sensor is a microphone, the substrate is provided with an acoustic aperture, and the MEMS chip is disposed facing the acoustic aperture.

According to another aspect of the present invention, there is also provided an adjusting method applied to the sensor described above, the adjusting method including the steps of:

acquiring voltage information of the piezoelectric material layer;

And regulating the bias voltage of the MEMS chip according to the voltage information.

In some embodiments, the voltage information includes a voltage direction and a voltage magnitude, and the step of adjusting the bias voltage of the MEMS chip according to the voltage information includes:

And determining to increase or decrease the bias voltage according to the voltage direction, and determining to increase or decrease the magnitude of the bias voltage according to the magnitude of the voltage.

In some embodiments, after the step of acquiring the voltage information of the piezoelectric material layer, the method further includes the steps of:

and if the voltage exceeds a preset threshold, an alarm is sent out.

According to another aspect of the present invention, there is also provided a sensor comprising:

A substrate;

a MEMS chip mounted on the substrate;

The detection piece is used for acquiring deformation degree information of the substrate;

and the ASIC chip is respectively connected with the detection piece and the MEMS chip in a signal way, and is used for receiving the deformation degree information and adjusting the bias voltage of the MEMS chip according to the deformation degree information.

According to another aspect of the present invention, there is also provided an adjusting method applied to the sensor described above, the adjusting method including the steps of:

obtaining deformation degree information of a substrate;

And regulating the bias voltage of the MEMS chip according to the deformation degree information.

According to another aspect of the present invention, the present invention also provides an electronic device, including the sensor described above, or the electronic device applies the adjustment method described above.

In the scheme, the piezoelectric material layer is arranged on the substrate and can deform along with the deformation of the substrate, so that the deformation of the substrate can be reacted through the deformation of the piezoelectric material layer. Under the action of external stress, for example, under the action of stress generated by tightening bolts in the process of installing the sensor on the whole machine, the internal positive and negative charge centers are caused to relatively shift so as to generate polarization, so that bound charges with opposite signs are generated at the end parts of the upper surface and the lower surface of the piezoelectric material layer, the signs of the bound charges are opposite to the signs of positive charges and negative charges, and voltage information is generated after the piezoelectric material layer is deformed, namely, the deformation degree and the deformation direction of the substrate are reflected through the voltage information of the piezoelectric material layer. The voltage information here includes voltage magnitude and voltage direction; the voltage information is transmitted to an ASIC chip in signal connection with the piezoelectric material layer, the ASIC chip adjusts the bias voltage supplied to the MEMS chip according to the voltage information after calculation, and the stress of the vibrating diaphragm of the MEMS chip is adjusted through the adjustment of the bias voltage, so that the change of the vibrating diaphragm stress of the MEMS chip caused by the deformation of the substrate is reduced or counteracted, and the stress change of the vibrating diaphragm is reduced or unchanged, so that the sensitivity of the sensor is ensured.

Drawings

In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings may be obtained from the structures shown in these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic view of a sensor according to an embodiment of the present invention in an undeformed state;

FIG. 2 is a schematic diagram of a sensor according to an embodiment of the present invention after deformation of a substrate;

FIG. 3 is a schematic diagram of a structure of a sensor according to an embodiment of the present invention after deformation of a piezoelectric material layer;

FIG. 4 is a schematic diagram of the MEMS chip after the substrate of FIG. 3 is deformed;

FIG. 5 is a schematic diagram of another structure of a sensor according to an embodiment of the present invention after deformation of a piezoelectric material layer;

FIG. 6 is a circuit diagram of an ASIC chip and MEMS chip of a sensor according to an embodiment of the present invention;

FIG. 7 is a flow chart of the adjusting method according to the first embodiment of the invention;

FIG. 8 is a flow chart of a second embodiment of the adjusting method of the present invention;

FIG. 9 is a flow chart of a third embodiment of the adjustment method of the present invention;

fig. 10 is a flow chart of an adjusting method according to a fourth embodiment of the invention.

Description of the reference numerals:

100. a sensor; 1. a substrate; 2. a MEMS chip; 21. a substrate; 22. a vibrating diaphragm; 23. a back electrode; 3. a piezoelectric material layer; 4. an ASIC chip; 5. a conductive member; 6. an acoustic aperture; 7. a receiving chamber; 8. a housing; 9. and a voltage regulating module.

The achievement of the object, functional features and advantages of the present invention will be further described with reference to the drawings in connection with the embodiments.

Detailed Description

The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, based on the embodiments of the invention, which are apparent to those of ordinary skill in the art without inventive faculty, are intended to be within the scope of the invention.

It should be noted that all directional indicators (such as upper and lower … …) in the embodiments of the present invention are merely used to explain the relative positional relationship, movement conditions, etc. between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indicator is changed accordingly.

Furthermore, descriptions such as those referred to as "first," "second," and the like, are provided for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implying an order of magnitude of the indicated technical features in the present disclosure. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature.

Moreover, the technical solutions of the embodiments of the present invention may be combined with each other, but it is necessary to be based on the fact that those skilled in the art can implement the embodiments, and when the technical solutions are contradictory or cannot be implemented, it should be considered that the combination of the technical solutions does not exist, and is not within the scope of protection claimed by the present invention.

The existing sensor has the problem that the acoustic performance is reduced after being installed on the whole machine. In a specific application scenario, the whole machine may be a main body of a consumer electronic device, and the electronic device may be an earphone, an intelligent watch, a ring, a bracelet or a tablet computer. The degradation in acoustic performance including signal-to-noise ratio, distortion and sensitivity, especially sensitivity, is particularly pronounced. The sensor may be an acoustic sensor such as a microphone, a pressure sensor, a temperature sensor, a humidity sensor, or the like.

Taking the sensor as an acoustic sensor microphone as an example, the problem of sensitivity degradation occurs after the sensor is mounted on the whole machine. The applicant finds that in the whole machine assembly process, the microphone is mounted on the hard board of the whole machine in a bolt positioning hole mode, namely hole positions are arranged on the microphone base plate and the hard board of the whole machine, and the hole positions are connected through bolts to play a role in positioning and mounting. The applicant has further found that, in this way, a large stress is generated, which causes deformation of the substrate of the sensor, which affects the state of the diaphragm of the MEMS chip, including changing the stress in the diaphragm, and indirectly affecting the acoustic performance of the microphone, such as the sensitivity described above.

To this end, the invention provides a sensor.

Referring to fig. 1 and 2, according to an aspect of the present invention, there is provided a sensor 100 including a substrate 1, MEMS chips 2 and a piezoelectric material layer 3 mounted to the substrate 1, respectively, the piezoelectric material layer 3 being capable of being deformed by deformation of the substrate 1 and outputting voltage information;

And an ASIC chip 4, the ASIC chip 4 is respectively connected with the piezoelectric material layer 3 and the MEMS chip 2 in a signal way, and the ASIC chip 4 is used for receiving the voltage information and adjusting the bias voltage of the MEMS chip 2 according to the voltage information.

It should be noted that, the sensor 100 includes a substrate 1 and a housing 8 covering the substrate 1, the substrate 1 and the housing 8 are surrounded and formed with a receiving cavity 7, the MEMS chip 2 and the ASIC chip 4 are disposed in the receiving cavity 7, and the MEMS chip 2 is mounted on the substrate 1, so that the diaphragm 22 of the MEMS chip 2 will be affected when the substrate 1 is deformed. As for the ASIC chip 4, it may be mounted on the substrate 1 or stacked on the MEMS chip 2, and the mounting position of the ASIC chip 4 is not particularly limited in the present invention.

In the above embodiment, the piezoelectric material layer 3 is mounted on the substrate 1, and can also deform along with the deformation of the substrate 1, so that the deformation of the substrate 1 can be reacted by the deformation of the piezoelectric material layer 3. Referring to fig. 3 and 5, under the action of external stress, for example, under the action of stress generated by tightening bolts in the process of installing the sensor 100 in the whole machine, the centers of positive and negative charges in the interior are relatively displaced to generate polarization, so that bound charges with opposite signs appear at the ends of the upper surface and the lower surface of the piezoelectric material layer 3, and the signs of the positive and negative charges are opposite, so that voltage information is generated after the piezoelectric material layer 3 is deformed, that is, the deformation degree and the deformation direction of the substrate 1 are reflected through the voltage information of the piezoelectric material layer 3. Here, the voltage information includes a voltage magnitude and a voltage direction. The voltage information is transmitted to the ASIC chip 4 which is in signal connection with the piezoelectric material layer 3, the ASIC chip 4 adjusts the bias voltage supplied to the MEMS chip 2 according to the voltage information after calculation, and the stress of the diaphragm 22 of the MEMS chip 2 is adjusted through the adjustment of the bias voltage, so that the change of the stress of the diaphragm 22 of the MEMS chip 2 caused by the deformation of the substrate 1 is reduced or counteracted, and the stress change of the diaphragm 22 is reduced or not changed, so that the sensitivity of the sensor 100 is ensured.

Specifically, the deformation of the substrate 1 may include at least two cases. Referring to fig. 3, the first case is: the upper layer is pressed and the lower layer is pulled, namely the middle position of the substrate 1 is downwards protruded, and the corresponding piezoelectric material layer 3 is similarly changed, namely the upper layer is pressed and the lower layer is stressed, the piezoelectric material layer 3 is downwards protruded, positive charges are formed on the lower surface of the piezoelectric material layer 3, and negative charges are formed on the upper surface. Referring to fig. 5, the second case is: the deformation of the substrate 1 is that the upper layer is pulled and the lower layer is pressed, that is, the middle position of the substrate 1 is raised upwards, and the corresponding piezoelectric material layer 3 is similarly changed, that is, the upper layer is pulled and the lower layer is pressed, and the piezoelectric material layer 3 is raised upwards. At this time, positive charges are generated on the upper surface of the piezoelectric material layer 3, and negative charges are generated on the lower surface.

Referring to fig. 3 and 4, taking the first case as an example, along with the deformation of the substrate 1, the MEMS chip 2 is deformed, and the MEMS chip 2 includes a substrate 21, and a back electrode 23 and a diaphragm 22 respectively disposed on the substrate 21, where the back electrode 23 and the diaphragm 22 are disposed opposite to each other to form two plates of a capacitor. When the substrate 1 is deformed in a downward protruding manner, the diaphragm 22 is loosened, the internal stress is reduced, at this time, the ASIC chip 4 can increase the bias voltage of the MEMS chip 2 according to the voltage information of the piezoelectric material layer 3, the specifically increased value is determined according to the voltage information, the diaphragm 22 can be biased to move toward the back electrode 23 by increasing the bias voltage, the internal stress of the diaphragm 22 is increased, or the state of the diaphragm 22 is changed to be tight again, and the influence of the deformation of the substrate 1 on the reduction of the internal stress of the diaphragm 22 is reduced or eliminated by such feedback adjustment, so that the sensitivity of the sensor 100 is maintained unchanged or is not changed greatly. The second case is the opposite and will not be described in detail here. Referring to fig. 6, fig. 6 is a circuit diagram of an ASIC chip and a MEMS chip of the sensor according to the embodiment of the present invention. A voltage regulating module 9 is added in the ASIC chip 4, and the bias voltage input to the MEMS chip 2 is regulated by the voltage regulating module 9.

In some embodiments, the layer of piezoelectric material 3 comprises a piezoelectric ceramic sheet, or, the layer of piezoelectric material 3 comprises quartz.

The piezoelectric material layer 3 is made of piezoelectric material, and the piezoelectric material can generate polarization after deformation so that the piezoelectric material layer 3 has voltage difference, and common piezoelectric materials comprise ceramics and crystals, wherein the ceramics are piezoelectric ceramic plates, and the crystals comprise quartz.

Referring to fig. 1 or 2, in some embodiments, a cavity is provided in the substrate 1, and the piezoelectric material layer 3 is embedded in the cavity.

By embedding the piezoelectric material layer 3 in the cavity of the substrate 1, in a further embodiment, each surface of the piezoelectric material layer 3 may be bonded to the inner wall surface of the cavity, so that the deformation degree of the substrate 1 can be reacted more accurately through the deformation of the piezoelectric material layer 3. Specifically, in the manufacturing process, the substrate 1 may be formed by laminating at least two layers, a groove may be first dug in one layer, the piezoelectric material layer 3 is placed in the groove, and then the piezoelectric material layer is compacted by the other layer. The substrate 1 can be a glass substrate, and the glass substrate has the advantages of ultra-thin, low cost, simple process flow, stable mechanical property and the like. And a TGV process can be used to dig grooves into a layer of board to make cavities. It should be noted that TGV, english is fully: through Glass Via, an advanced packaging technique combining laser and etching techniques, is a process for manufacturing glass substrates with high functionality.

Referring to fig. 1 or 2, in some embodiments, the sensor 100 further includes a conductive member 5, one end of the conductive member 5 is electrically connected to the piezoelectric material layer 3, the other end of the conductive member 5 extends out of the substrate 1, and the asic chip 4 is electrically connected to the other end of the conductive member 5. The conductive member 5 may be a metal member, such as a copper pillar, and has one end electrically connected to the piezoelectric material layer 3 and the other end extending out of the substrate 1 so as to be electrically connected to the ASIC chip 4, and may specifically be electrically connected to the ASIC chip 4 through a gold wire. To facilitate the transfer of the voltage information of the layer 3 of piezoelectric material to the ASIC chip 4.

In some embodiments, the sensor 100 is a microphone, the substrate 1 is provided with an acoustic port 6, and the mems chip 2 is disposed facing the acoustic port 6.

In a specific application scenario, the sensor 100 is an acoustic sensor, for example, may be a microphone, the MEMS chip 2 and the ASIC chip 4 may be connected by gold wires, the ASIC chip 4 may also be connected to the substrate 1 by gold wires, and meanwhile, the ASIC chip 4 is connected to the conductive column by gold wires, and the MEMS chip 2 is configured to receive a sound pressure signal coming from the sound hole 6 and transmit the sound pressure signal to the ASIC chip 4 for processing, so as to implement a sound pickup function.

Referring to fig. 7, fig. 7 is a flow chart of an adjusting method according to a first embodiment of the present invention. The invention also provides an adjusting method applied to the sensor 100, which comprises the following steps:

s10, acquiring voltage information of the piezoelectric material layer 3;

Referring to fig. 1 and 2, the sensor 100 includes a substrate 1, a MEMS chip 2 and a piezoelectric material layer 3 mounted on the substrate 1, respectively, and the piezoelectric material layer 3 is capable of deforming under deformation of the substrate 1 and outputting voltage information. Specifically, the piezoelectric material layer 3 is mounted on the substrate 1, and in a further embodiment, the piezoelectric material layer 3 is embedded in the cavity of the substrate 1, and can deform along with the deformation of the substrate 1, so that the deformation of the substrate 1 can be reflected by the deformation of the piezoelectric material layer 3. Referring to fig. 3 and 5, under the action of external stress, for example, under the action of stress generated by tightening bolts in the process of installing the sensor 100 in the whole machine, the centers of positive and negative charges in the interior are relatively displaced to generate polarization, so that bound charges with opposite signs appear at the ends of the upper surface and the lower surface of the piezoelectric material layer 3, the signs of the positive and negative charges are opposite, and thus voltage information is generated after the piezoelectric material layer 3 is deformed, and the voltage information includes the voltage magnitude and the voltage direction. That is, the degree and direction of deformation of the substrate 1 are reflected by the voltage information of the piezoelectric material layer 3.

And S20, regulating the bias voltage of the MEMS chip 2 according to the voltage information.

The sensor 100 further comprises an ASIC chip 4, the ASIC chip 4 is respectively in signal connection with the piezoelectric material layer 3 and the MEMS chip 2, and the ASIC chip 4 is configured to receive the voltage information and adjust the bias voltage of the MEMS chip 2 according to the voltage information. The voltage information is transmitted to an ASIC chip 4 in signal connection with the piezoelectric material layer 3, the ASIC chip 4 adjusts the bias voltage supplied to the MEMS chip 2 according to the voltage information after calculation processing, and the stress of the diaphragm 22 of the MEMS chip 2 is adjusted through the adjustment of the bias voltage.

In the above embodiment of the present invention, along with the deformation of the substrate 1, the MEMS chip 2 is deformed, and the MEMS chip 2 includes a substrate 21, and a back electrode 23 and a diaphragm 22 respectively disposed on the substrate 21, where the back electrode 23 and the diaphragm 22 are disposed opposite to each other to form two plates of a capacitor. The ASIC chip 4 adjusts the bias voltage supplied to the MEMS chip 2 according to the voltage information after calculation processing, and adjusts the stress of the diaphragm 22 of the MEMS chip 2 by adjusting the bias voltage, so as to reduce or cancel the change of the stress of the diaphragm 22 of the MEMS chip 2 caused by the deformation of the substrate 1, so that the stress change of the diaphragm 22 is reduced or not changed, and the sensitivity of the sensor 100 is ensured.

Referring to fig. 8, fig. 8 is a flow chart of an adjusting method according to a second embodiment of the present invention, and the steps of S20 include:

s21, determining to increase or decrease the bias voltage according to the voltage direction, and determining to increase or decrease the value of the bias voltage according to the voltage.

The deformation of the substrate 1 may include at least two cases. Referring to fig. 3, the first case is: the upper layer is pressed and the lower layer is pulled, namely the middle position of the substrate 1 is downwards protruded, and the corresponding piezoelectric material layer 3 is similarly changed, namely the upper layer is pressed and the lower layer is stressed, the piezoelectric material layer 3 is downwards protruded, positive charges are formed on the lower surface of the piezoelectric material layer 3, and negative charges are formed on the upper surface. Referring to fig. 5, the second case is: the deformation of the substrate 1 is that the upper layer is pulled and the lower layer is pressed, that is, the middle position of the substrate 1 is raised upwards, and the corresponding piezoelectric material layer 3 is similarly changed, that is, the upper layer is pulled and the lower layer is pressed, and the piezoelectric material layer 3 is raised upwards. At this time, positive charges are generated on the upper surface of the piezoelectric material layer 3, and negative charges are generated on the lower surface.

Referring to fig. 3 and 4, taking the first case as an example, along with the deformation of the substrate 1, the MEMS chip 2 is deformed, and the MEMS chip 2 includes a substrate 21, and a back electrode 23 and a diaphragm 22 respectively disposed on the substrate 21, where the back electrode 23 and the diaphragm 22 are disposed opposite to each other to form two plates of a capacitor. When the substrate 1 is deformed in a downward protruding manner, the diaphragm 22 is loosened, the internal stress is reduced, at this time, the ASIC chip 4 can increase the bias voltage of the MEMS chip 2 according to the voltage information of the piezoelectric material layer 3, the specifically increased value is determined according to the voltage information, the diaphragm 22 can be biased to move toward the back electrode 23 by increasing the bias voltage, the internal stress of the diaphragm 22 is increased, or the state of the diaphragm 22 is changed to be tight again, and the influence of the deformation of the substrate 1 on the internal stress of the diaphragm 22 is reduced or eliminated by such feedback adjustment, so that the sensitivity of the sensor 100 is maintained unchanged or is not changed greatly. The second case is the opposite and will not be described in detail here.

Referring to fig. 9, fig. 9 is a schematic flow chart of an adjustment method according to a third embodiment of the present invention, after the step of S10, the method further includes the steps of:

S11, if the voltage exceeds a preset threshold, an alarm is sent out.

The voltage magnitude reflects the deformation degree of the substrate 1, a preset threshold value can be set, when the voltage magnitude exceeds the preset threshold value, the deformation of the substrate 1 exceeds a preset limit, or the stress change of the diaphragm 22 of the MEMS chip 2 caused by the deformation of the substrate 1 cannot be counteracted by feedback adjustment of the piezoelectric material layer 3 and the ASIC chip 4, and then the sensor 100 directly outputs a warning signal to prompt an operator. The operator can consider making adjustments to the overall machine structural design or assembly sequence. If the threshold is not exceeded, the step of S20 is performed.

According to another aspect of the invention, the invention also provides a sensor 100 comprising:

A substrate 1;

a MEMS chip 2 mounted on the substrate 1;

A detecting member for acquiring deformation degree information of the substrate 1;

and the ASIC chip 4 is respectively connected with the detection piece and the MEMS chip 2 in a signal way, and the ASIC chip 4 is used for receiving the deformation degree information and adjusting the bias voltage of the MEMS chip 2 according to the deformation degree information.

The sensor 100 comprises a substrate 1 and a housing 8 covering the substrate 1, wherein a containing cavity 7 is formed by surrounding the substrate 1 and the housing 8, the MEMS chip 2 and the ASIC chip 4 are arranged in the containing cavity 7, and the MEMS chip 2 is mounted on the substrate 1, so that the vibrating diaphragm 22 of the MEMS chip 2 can be influenced when the substrate 1 is deformed. As for the ASIC chip 4, it may be mounted on the substrate 1 or stacked on the MEMS chip 2, and the mounting position of the ASIC chip 4 is not particularly limited in the present invention.

In the above embodiment, the detecting member may be provided inside the accommodating chamber 7 or outside the accommodating chamber 7. The detecting element is used to detect the deformation degree information of the substrate 1, where the detecting element may be the piezoelectric material layer 3 described above, and the deformation degree of the substrate 1 is reflected by the deformation direction and the deformation degree of the piezoelectric material layer 3. Of course, in other embodiments, the detecting element may also be an infrared camera, and the deformation degree of the substrate 1 is directly obtained by obtaining the image of the substrate 1, and the deformation degree information of the substrate 1 is sent to the ASIC chip 4. The ASIC chip 4 processes the deformation degree information, adjusts the bias voltage applied to the MEMS chip 2 according to the deformation degree information, and adjusts the stress of the diaphragm 22 of the MEMS chip 2 by adjusting the bias voltage, so as to reduce or cancel the change of the stress of the diaphragm 22 of the MEMS chip 2 caused by the deformation of the substrate 1, so that the stress change of the diaphragm 22 is reduced or unchanged, and the sensitivity of the sensor 100 is ensured. The deformation degree information includes the deformation direction and the deformation magnitude of the substrate 1.

Specifically, the deformation of the substrate 1 may include at least two cases. The first case is: the upper layer is pressed and the lower layer is pulled, namely, the middle position of the base plate 1 is downwards protruded. The second case is: the deformation of the base plate 1 is in a condition that the upper layer is pulled and the lower layer is pressed, that is, the middle position of the base plate 1 is raised upwards.

Taking the first case as an example, along with the deformation of the substrate 1, the MEMS chip 2 will also deform, and the MEMS chip 2 includes a substrate 21, and a back electrode 23 and a diaphragm 22 respectively disposed on the substrate 21, where the back electrode 23 and the diaphragm 22 are disposed opposite to each other to form two electrode plates of a capacitor. When the substrate 1 is deformed in a downward protruding manner, the vibration film 22 is loosened, the internal stress is reduced, at this time, the ASIC chip 4 can increase the bias voltage of the MEMS chip 2 according to the deformation degree information sent by the infrared camera, the specific value of the increase is determined according to the deformation degree information, the vibration film 22 can be biased to the back electrode 23 to move by increasing the bias voltage, the internal stress of the vibration film 22 is increased, or the state of the vibration film 22 is changed to be tight again, the influence of the deformation of the substrate 1 on the internal stress of the vibration film 22 is reduced or eliminated through such feedback adjustment, and the sensitivity of the sensor 100 is kept unchanged or is not changed greatly. The second case is the opposite and will not be described in detail here.

Referring to fig. 10, fig. 10 is a flow chart of a fourth embodiment of the adjusting method according to the present invention, and the present invention further provides an adjusting method applied to the sensor 100, where the adjusting method includes the following steps:

S100, obtaining deformation degree information of the substrate 1;

The detection member may be provided inside the accommodation chamber 7 or outside the accommodation chamber 7. The detecting element is used to detect the deformation degree information of the substrate 1, where the detecting element may be the piezoelectric material layer 3 described above, and the deformation degree of the substrate 1 is reflected by the deformation direction and the deformation degree of the piezoelectric material layer 3. Of course, in other embodiments, the detecting element may also be an infrared camera, and the deformation degree of the substrate 1 is directly obtained by obtaining the image of the substrate 1, and the deformation degree information of the substrate 1 is sent to the ASIC chip 4.

And S200, adjusting the bias voltage of the MEMS chip 2 according to the deformation degree information.

The ASIC chip 4 processes the deformation degree information, adjusts the bias voltage applied to the MEMS chip 2 according to the deformation degree information, and adjusts the stress of the diaphragm 22 of the MEMS chip 2 by adjusting the bias voltage.

In the above embodiment of the present invention, along with the deformation of the substrate 1, the MEMS chip 2 is deformed, and the MEMS chip 2 includes a substrate 21, and a back electrode 23 and a diaphragm 22 respectively disposed on the substrate 21, where the back electrode 23 and the diaphragm 22 are disposed opposite to each other to form two plates of a capacitor. The ASIC chip 4 adjusts the bias voltage supplied to the MEMS chip 2 according to the deformation degree information after calculation processing, and adjusts the stress of the diaphragm 22 of the MEMS chip 2 by adjusting the bias voltage, so as to reduce or cancel the change of the stress of the diaphragm 22 of the MEMS chip 2 caused by the deformation of the substrate 1, so that the stress change of the diaphragm 22 is reduced or not changed, and the sensitivity of the sensor 100 is ensured.

According to another aspect of the present invention, the present invention also provides an electronic device, including the sensor 100 described above, or the electronic device applies the adjustment method described above. The electronic device may be a headset, a smart watch, a ring, a bracelet, or a tablet computer. The electronic device includes all the technical solutions of all the embodiments of the sensor 100 and the adjusting method, so that all the beneficial effects brought by all the technical solutions are not described in detail herein.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and not for limiting the scope of the patent claims; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: under the technical conception of the application, the technical scheme recorded in the embodiments can be modified or part or all of the technical features can be replaced equivalently; or directly/indirectly in other related technical fields, without departing from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application, and the scope of the claims and the specification of the present application shall be covered. In particular, the technical features mentioned in the respective embodiments may be combined in any manner as long as there is no structural conflict. The present application is not limited to the specific embodiments disclosed herein, but encompasses all technical solutions falling within the scope of the claims.

Claims (13)

1. A sensor for the use in a medical device, characterized by comprising the following steps:

A substrate;

a MEMS chip mounted on the substrate;

the piezoelectric material layer is arranged on the substrate, and can deform under the deformation of the substrate and output voltage information;

and the ASIC chip is respectively connected with the piezoelectric material layer and the MEMS chip in a signal way, and is used for receiving the voltage information and adjusting the bias voltage of the MEMS chip according to the voltage information.

2. The sensor of claim 1, wherein the voltage information is generated by polarization of both surfaces of the piezoelectric material layer after deformation, the voltage information including a voltage magnitude and a voltage direction; the ASIC chip adjusts the stress of the diaphragm of the MEMS chip by adjusting the bias voltage of the MEMS chip so as to reduce or counteract the change of the stress of the diaphragm of the MEMS chip caused by the deformation of the substrate.

3. The sensor of claim 1, wherein a cavity is disposed within the substrate, the layer of piezoelectric material being embedded within the cavity.

4. The sensor of claim 1, wherein the layer of piezoelectric material comprises a piezoelectric ceramic sheet or the layer of piezoelectric material comprises quartz.

5. The sensor of any one of claims 1-4, further comprising a conductive member, one end of the conductive member being electrically connected to the piezoelectric material layer, the other end of the conductive member extending beyond the substrate, the ASIC chip being electrically connected to the other end of the conductive member.

6. The sensor of any one of claims 1-4, wherein the substrate is a glass substrate.

7. The sensor of any one of claims 1 to 4, wherein the sensor is a microphone, the substrate is provided with an acoustic aperture, and the MEMS chip is disposed facing the acoustic aperture.

8. A method of adjustment for use with the sensor of any one of claims 1 to 7, the method of adjustment comprising the steps of:

acquiring voltage information of the piezoelectric material layer;

And regulating the bias voltage of the MEMS chip according to the voltage information.

9. The method of adjusting as defined in claim 8, wherein the voltage information includes a voltage direction and a voltage magnitude, and the step of adjusting the bias voltage of the MEMS chip according to the voltage information includes:

And determining to increase or decrease the bias voltage according to the voltage direction, and determining to increase or decrease the magnitude of the bias voltage according to the magnitude of the voltage.

10. The method of adjusting as defined in claim 9, further comprising, after the step of acquiring the voltage information of the piezoelectric material layer, the step of:

and if the voltage exceeds a preset threshold, an alarm is sent out.

11. A sensor for the use in a medical device, characterized by comprising the following steps:

A substrate;

a MEMS chip mounted on the substrate;

The detection piece is used for acquiring deformation degree information of the substrate;

and the ASIC chip is respectively connected with the detection piece and the MEMS chip in a signal way, and is used for receiving the deformation degree information and adjusting the bias voltage of the MEMS chip according to the deformation degree information.

12. A method of adjustment for use with the sensor of claim 11, the method of adjustment comprising the steps of:

the deformation degree information of the substrate is obtained,

And regulating the bias voltage of the MEMS chip according to the deformation degree information.

13. An electronic device comprising the sensor of any one of claims 1 to 7 or 11, or the electronic device applying the adjustment method of any one of claims 8 to 10 or 12.