CN118658802B - High-controllability nano-imprinting wafer heat treatment monitoring method - Google Patents
High-controllability nano-imprinting wafer heat treatment monitoring method Download PDFInfo
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- 238000004364 calculation method Methods 0.000 claims description 14
- 238000007669 thermal treatment Methods 0.000 claims description 3
- 238000003754 machining Methods 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 68
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Abstract
The invention discloses a high-controllability nano-imprinting wafer heat treatment monitoring method, which belongs to the technical field of heat treatment monitoring and comprises the following steps: s1, collecting real-time temperature of a wafer in the heat treatment process of a target pattern of a template and a nano-imprinting wafer; s2, generating a temperature code of the wafer; s3, determining whether the machining abnormality exists in the heat treatment process. The method comprises the steps of constructing a two-dimensional temperature vector and a three-dimensional temperature vector for the wafer temperature monitored in real time, generating a specific temperature code, and determining whether temperature abnormality exists in the heat treatment process by combining the temperature median of the whole moment; the invention can obviously improve the controllability and the stability of the heat treatment process of the nano-imprinting wafer, improve the sensitivity and the accuracy of temperature detection and avoid machining errors.
Description
Technical Field
The invention belongs to the technical field of heat treatment monitoring, and particularly relates to a high-controllability nano-imprinting wafer heat treatment monitoring method.
Background
In the field of semiconductor manufacturing, temperature control of wafer thermal processing equipment plays a critical role in the stability of semiconductor processes. For example, in the processing technology of a re-chip, if the wafer is heated unevenly in the heat treatment process, the crystal lattice may be deformed or out of order, the crystal lattice deformation may affect the crystal structure of the silicon wafer, the electrical characteristics of the silicon wafer may be changed, and finally the silicon wafer may fail. Therefore, how to improve the effect of rapid thermal processing of wafers, discover the abnormal temperature in the thermal processing process in time, and improve the yield of semiconductor products is a technical problem to be solved at present.
Disclosure of Invention
The invention provides a high-controllability nano-imprint wafer heat treatment monitoring method for solving the problems.
The technical scheme of the invention is as follows: the high-controllability nano-imprinting wafer heat treatment monitoring method comprises the following steps of:
s1, collecting real-time temperature of a wafer in the heat treatment process of a target pattern of a template and a nano-imprinting wafer;
S2, constructing a three-dimensional temperature vector and a two-dimensional temperature vector for each moment according to the real-time temperature of the wafer, and generating a temperature code of the wafer;
s3, determining whether the processing abnormality exists in the heat treatment process according to the temperature code of the wafer.
The heat treatment method of the nano-imprinting wafer mainly relates to a process of transferring a pattern on a mask plate to the surface of the wafer by utilizing physical contact under specific temperature and pressure conditions. It should be noted that, in the case of a thermal imprint process, the template is pressed into the resist at a specific temperature and pressure, and this process is usually accompanied by a heating step to bring the resist above the glass transition point temperature, so that sufficient fluidity is provided to fill the pattern voids of the template.
Further, S2 comprises the following sub-steps:
S21, combining a temperature difference value of the wafer at the next moment and the current moment, a temperature value of the current moment and a temperature difference value of the current moment and the previous moment to serve as a three-dimensional temperature vector of the current moment;
S22, determining a thermal change scalar quantity at each moment according to the three-dimensional temperature vector at each moment;
S23, taking the time with even thermal change scalar as a first time sequence, taking the time with odd thermal change scalar as a second time sequence, and determining the temperature degree value of the wafer in the heat treatment process according to the first time sequence and the second time sequence;
S24, generating a temperature code of the wafer according to the temperature degree value of the wafer in the heat treatment process.
The beneficial effects of the above-mentioned further scheme are: in the invention, a three-dimensional temperature vector is constructed for each moment according to the temperature value difference value of continuous moments, the change condition of each moment, namely, a thermal change scalar quantity is determined, wherein the thermal change scalar quantity has three conditions of-1, 0 and 1, a moment sequence is divided according to the parity condition of the thermal change quantity, the temperature degree value of the whole heat treatment process is determined, the temperature degree value is utilized to construct a two-dimensional temperature vector again, and the two-dimensional temperature vector participates in the generation of a temperature code.
In S21, the calculation formula of the three-dimensional temperature vector j i at the i-th time is: ; where p i-1 denotes the temperature of the wafer at the i-1 th time, p i denotes the temperature of the wafer at the i-1 th time, and p i+1 denotes the temperature of the wafer at the i+1 th time.
Further, in S22, the calculation formula of the thermal change scalar J i at the i-th time is: ; where j i-1 represents a three-dimensional temperature vector at the i-1 th time, j i represents a three-dimensional temperature vector at the i-1 th time, j i+1 represents a three-dimensional temperature vector at the i+1 th time, sgn (·) represents a sign function, and x represents a vector cross operation.
Further, in S23, the calculation formula of the temperature degree value P of the wafer during the heat treatment is: ; wherein p m represents a temperature value corresponding to the mth time in the first sequence, p n represents a temperature value corresponding to the nth time in the second sequence, M represents the total number of times included in the first sequence, N represents the total number of times included in the second sequence, random (·) represents a random function of 0 to 1, and c represents a constant.
Further, S24 includes the sub-steps of:
S241, upwards rounding the temperature degree value of the wafer in the heat treatment process;
s242, combining the temperature degree value obtained after upward rounding with the temperature value at each moment to obtain a two-dimensional temperature vector at each moment;
s243, combining the temperature degree value with the average value of the temperature values at all moments to obtain a degree vector;
s244, generating a temperature code of the wafer according to the degree vector and the two-dimensional temperature vector at each moment.
The beneficial effects of the above-mentioned further scheme are: according to the invention, the temperature degree value is generated according to three values of the thermal variation, a two-dimensional temperature vector can be generated for each moment, the operation difficulty in the generation of the temperature code is reduced, and the generation of the temperature code is facilitated. The expression of the two-dimensional temperature vector X i at each time is: ; wherein P i represents the temperature of the wafer at the i-th time, P represents the temperature degree value of the wafer during the heat treatment, Representing an upward rounding. The expression of the degree vector Y is: ; where p ave represents the average value of the temperature values at all times.
Further, in S244, the calculation formula of the temperature code K of the wafer is: ; wherein Y represents a degree vector, X i represents a two-dimensional temperature vector at the I-th time, tanh (·) represents a hyperbolic tangent function, exp (·) represents an exponential function, and I represents a total time.
Further, S3 comprises the following sub-steps:
s31, generating the heat treatment temperature quantity of the wafer according to the temperature code of the wafer and the real-time temperature of the wafer;
S32, judging whether the heat treatment temperature amount belongs to a controllable temperature range of the wafer, if so, not generating processing abnormality in the heat treatment process, and if not, generating processing abnormality in the heat treatment process.
The controllable temperature range of the wafer is determined by its own characteristics or set manually.
Further, in S31, the calculation formula of the thermal treatment temperature amount G of the wafer is: ; wherein P mean represents the median of the temperature values at all times, and K represents the temperature code of the wafer.
The beneficial effects of the invention are as follows: the method comprises the steps of constructing a two-dimensional temperature vector and a three-dimensional temperature vector for the wafer temperature monitored in real time, generating a specific temperature code, and determining whether temperature abnormality exists in the heat treatment process by combining the temperature median of the whole moment; the invention can obviously improve the controllability and the stability of the heat treatment process of the nano-imprinting wafer, improve the sensitivity and the accuracy of temperature detection and avoid machining errors.
Drawings
FIG. 1 is a flow chart of a method for monitoring heat treatment of a highly controllable nanoimprint wafer.
Detailed Description
Embodiments of the present invention are further described below with reference to the accompanying drawings.
As shown in fig. 1, the invention provides a high-controllability nano-imprint wafer heat treatment monitoring method, which comprises the following steps:
s1, collecting real-time temperature of a wafer in the heat treatment process of a target pattern of a template and a nano-imprinting wafer;
S2, constructing a three-dimensional temperature vector and a two-dimensional temperature vector for each moment according to the real-time temperature of the wafer, and generating a temperature code of the wafer;
s3, determining whether the processing abnormality exists in the heat treatment process according to the temperature code of the wafer.
The heat treatment method of the nano-imprinting wafer mainly relates to a process of transferring a pattern on a mask plate to the surface of the wafer by utilizing physical contact under specific temperature and pressure conditions. It should be noted that, in the case of a thermal imprint process, the template is pressed into the resist at a specific temperature and pressure, and this process is usually accompanied by a heating step to bring the resist above the glass transition point temperature, so that sufficient fluidity is provided to fill the pattern voids of the template.
In an embodiment of the present invention, S2 comprises the following sub-steps:
S21, combining a temperature difference value of the wafer at the next moment and the current moment, a temperature value of the current moment and a temperature difference value of the current moment and the previous moment to serve as a three-dimensional temperature vector of the current moment;
S22, determining a thermal change scalar quantity at each moment according to the three-dimensional temperature vector at each moment;
S23, taking the time with even thermal change scalar as a first time sequence, taking the time with odd thermal change scalar as a second time sequence, and determining the temperature degree value of the wafer in the heat treatment process according to the first time sequence and the second time sequence;
S24, generating a temperature code of the wafer according to the temperature degree value of the wafer in the heat treatment process.
In the invention, a three-dimensional temperature vector is constructed for each moment according to the temperature value difference value of continuous moments, the change condition of each moment, namely, a thermal change scalar quantity is determined, wherein the thermal change scalar quantity has three conditions of-1, 0 and 1, a moment sequence is divided according to the parity condition of the thermal change quantity, the temperature degree value of the whole heat treatment process is determined, the temperature degree value is utilized to construct a two-dimensional temperature vector again, and the two-dimensional temperature vector participates in the generation of a temperature code.
In S21, the calculation formula of the three-dimensional temperature vector j i at the i-th time is: ; where p i-1 denotes the temperature of the wafer at the i-1 th time, p i denotes the temperature of the wafer at the i-1 th time, and p i+1 denotes the temperature of the wafer at the i+1 th time.
In the embodiment of the present invention, in S22, the calculation formula of the thermal change scalar J i at the i-th time is: ; where j i-1 represents a three-dimensional temperature vector at the i-1 th time, j i represents a three-dimensional temperature vector at the i-1 th time, j i+1 represents a three-dimensional temperature vector at the i+1 th time, sgn (·) represents a sign function, and x represents a vector cross operation.
In the embodiment of the present invention, in S23, the calculation formula of the temperature degree value P of the wafer during the heat treatment is: ; wherein p m represents a temperature value corresponding to the mth time in the first sequence, p n represents a temperature value corresponding to the nth time in the second sequence, M represents the total number of times included in the first sequence, N represents the total number of times included in the second sequence, random (·) represents a random function of 0 to 1, and c represents a constant.
In an embodiment of the present invention, S24 includes the following sub-steps:
S241, upwards rounding the temperature degree value of the wafer in the heat treatment process;
s242, combining the temperature degree value obtained after upward rounding with the temperature value at each moment to obtain a two-dimensional temperature vector at each moment;
s243, combining the temperature degree value with the average value of the temperature values at all moments to obtain a degree vector;
s244, generating a temperature code of the wafer according to the degree vector and the two-dimensional temperature vector at each moment.
According to the invention, the temperature degree value is generated according to three values of the thermal variation, a two-dimensional temperature vector can be generated for each moment, the operation difficulty in the generation of the temperature code is reduced, and the generation of the temperature code is facilitated. The expression of the two-dimensional temperature vector X i at each time is: ; wherein P i represents the temperature of the wafer at the i-th time, P represents the temperature degree value of the wafer during the heat treatment, Representing an upward rounding. The expression of the degree vector Y is: ; where p ave represents the average value of the temperature values at all times.
In the embodiment of the present invention, in S244, the calculation formula of the temperature code K of the wafer is: ; wherein Y represents a degree vector, X i represents a two-dimensional temperature vector at the I-th time, tanh (·) represents a hyperbolic tangent function, exp (·) represents an exponential function, and I represents a total time.
In an embodiment of the present invention, S3 comprises the following sub-steps:
s31, generating the heat treatment temperature quantity of the wafer according to the temperature code of the wafer and the real-time temperature of the wafer;
S32, judging whether the heat treatment temperature amount belongs to a controllable temperature range of the wafer, if so, not generating processing abnormality in the heat treatment process, and if not, generating processing abnormality in the heat treatment process.
The controllable temperature range of the wafer is determined by its own characteristics or set manually.
In the embodiment of the present invention, in S31, the calculation formula of the thermal treatment temperature amount G of the wafer is: ; wherein P mean represents the median of the temperature values at all times, and K represents the temperature code of the wafer.
Those of ordinary skill in the art will recognize that the embodiments described herein are for the purpose of aiding the reader in understanding the principles of the present invention and should be understood that the scope of the invention is not limited to such specific statements and embodiments. Those of ordinary skill in the art can make various other specific modifications and combinations from the teachings of the present disclosure without departing from the spirit thereof, and such modifications and combinations remain within the scope of the present disclosure.
Claims (1)
1. The high-controllability nano-imprinting wafer heat treatment monitoring method is characterized by comprising the following steps of:
s1, collecting real-time temperature of a wafer in the heat treatment process of a target pattern of a template and a nano-imprinting wafer;
S2, constructing a three-dimensional temperature vector and a two-dimensional temperature vector for each moment according to the real-time temperature of the wafer, and generating a temperature code of the wafer;
S3, determining whether the processing abnormality exists in the heat treatment process according to the temperature code of the wafer;
the step S2 comprises the following substeps:
S21, combining a temperature difference value of the wafer at the next moment and the current moment, a temperature value of the current moment and a temperature difference value of the current moment and the previous moment to serve as a three-dimensional temperature vector of the current moment;
S22, determining a thermal change scalar quantity at each moment according to the three-dimensional temperature vector at each moment;
S23, taking the time with even thermal change scalar as a first time sequence, taking the time with odd thermal change scalar as a second time sequence, and determining the temperature degree value of the wafer in the heat treatment process according to the first time sequence and the second time sequence;
s24, generating a temperature code of the wafer according to the temperature degree value of the wafer in the heat treatment process;
in S22, the calculation formula of the thermal change scalar J i at the i-th time is: ; wherein j i-1 represents a three-dimensional temperature vector at the i-1 th time, j i represents a three-dimensional temperature vector at the i-1 th time, j i+1 represents a three-dimensional temperature vector at the i+1 th time, sgn (·) represents a sign function, and x represents a vector cross operation;
In S23, the calculation formula of the temperature degree value P of the wafer during the heat treatment is as follows: ; wherein p m represents a temperature value corresponding to the mth time in the first sequence, p n represents a temperature value corresponding to the nth time in the second sequence, M represents the total number of times contained in the first sequence, N represents the total number of times contained in the second sequence, random (·) represents a random function of 0-1, and c represents a constant;
The step S24 includes the sub-steps of:
S241, upwards rounding the temperature degree value of the wafer in the heat treatment process;
s242, combining the temperature degree value obtained after upward rounding with the temperature value at each moment to obtain a two-dimensional temperature vector at each moment;
s243, combining the temperature degree value with the average value of the temperature values at all moments to obtain a degree vector;
s244, generating a temperature code of the wafer according to the degree vector and the two-dimensional temperature vector at each moment;
In S244, the calculation formula of the temperature code K of the wafer is: ; wherein Y represents a degree vector, X i represents a two-dimensional temperature vector at the ith moment, tanh (·) represents a hyperbolic tangent function, exp (·) represents an exponential function, and I represents a total moment;
the step S3 comprises the following substeps:
s31, generating the heat treatment temperature quantity of the wafer according to the temperature code of the wafer and the real-time temperature of the wafer;
s32, judging whether the heat treatment temperature amount belongs to a controllable temperature range of the wafer, if so, not generating processing abnormality in the heat treatment process, otherwise, generating processing abnormality in the heat treatment process;
In S31, the calculation formula of the thermal treatment temperature amount G of the wafer is: ; wherein P mean represents the median of the temperature values at all times, and K represents the temperature code of the wafer;
the heat change scalar has three conditions of-1, 0 and 1;
the expression of the two-dimensional temperature vector X i at each time is: ; wherein P i represents the temperature of the wafer at the i-th time, P represents the temperature degree value of the wafer during the heat treatment, Representing an upward rounding; the expression of the degree vector Y is: ; where p ave represents the average value of the temperature values at all times.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101144988A (en) * | 2006-09-13 | 2008-03-19 | 沈阳芯源先进半导体技术有限公司 | Temperature gradient controllable wafer front-drying method and its hot plate type front drying device |
| CN103474381A (en) * | 2013-09-22 | 2013-12-25 | 上海华力微电子有限公司 | Method utilizing temperature difference for monitoring positional deviation of wafer in high temperature cavity |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5001327A (en) * | 1987-09-11 | 1991-03-19 | Hitachi, Ltd. | Apparatus and method for performing heat treatment on semiconductor wafers |
| JP3857657B2 (en) * | 2000-09-13 | 2006-12-13 | 東京エレクトロン株式会社 | Substrate processing equipment |
| US7279721B2 (en) * | 2005-04-13 | 2007-10-09 | Applied Materials, Inc. | Dual wavelength thermal flux laser anneal |
| JP2016009796A (en) * | 2014-06-25 | 2016-01-18 | 東京エレクトロン株式会社 | Substrate heating apparatus, substrate supporting apparatus, substrate processing apparatus and substrate processing method |
| JP6464765B2 (en) * | 2015-01-19 | 2019-02-06 | 東京エレクトロン株式会社 | Heat treatment apparatus, heat treatment method and storage medium |
| CN106206349B (en) * | 2016-07-19 | 2018-11-23 | 京东方科技集团股份有限公司 | Substrate temperature monitoring device, dry etching equipment and substrate temperature monitoring method |
| CN214794323U (en) * | 2020-12-19 | 2021-11-19 | 辽宁工程技术大学 | High-efficient measuring device of liquid viscosity coefficient |
| CN113186520B (en) * | 2021-04-29 | 2022-09-16 | 北京北方华创微电子装备有限公司 | Reaction chamber, semiconductor processing equipment and base temperature control method |
| CN117250208B (en) * | 2023-11-20 | 2024-02-06 | 青岛天仁微纳科技有限责任公司 | Machine vision-based nano-imprint wafer defect accurate detection system and method |
| CN221440793U (en) * | 2023-12-01 | 2024-07-30 | 扬州鼎众科技有限公司 | Metal material heat treatment device capable of being cooled rapidly |
| CN117913001B (en) * | 2024-03-07 | 2024-08-02 | 苏州普伊特自动化系统有限公司 | Control system and method for chain type cleaning equipment |
| CN118412296B (en) * | 2024-07-02 | 2024-09-24 | 青岛天仁微纳科技有限责任公司 | Surface temperature detection method for nanoimprint wafer production |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101144988A (en) * | 2006-09-13 | 2008-03-19 | 沈阳芯源先进半导体技术有限公司 | Temperature gradient controllable wafer front-drying method and its hot plate type front drying device |
| CN103474381A (en) * | 2013-09-22 | 2013-12-25 | 上海华力微电子有限公司 | Method utilizing temperature difference for monitoring positional deviation of wafer in high temperature cavity |
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