CN118658802B - High-controllability nano-imprinting wafer heat treatment monitoring method - Google Patents
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 57
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Abstract
Description
技术领域Technical Field
本发明属于热处理监测技术领域，具体涉及一种高可控性纳米压印晶圆热处理监测方法。The invention belongs to the technical field of heat treatment monitoring, and in particular relates to a highly controllable nanoimprint wafer heat treatment monitoring method.
背景技术Background Art
在半导体制造领域，晶圆热处理设备的温度控制对半导体工艺的稳定性起到至关重要的作用。例如再芯片的加工工艺中，若晶圆热处理过程加热不均匀，可能会导致晶格发生变形或失序，晶格变形会影响硅片的晶体结构，可能会使其电学特性发生变化，最终可能会导致硅片失效。因此，如何改善晶圆快速热处理的效果，及时发现热处理过程中出现的温度异常，提高半导体产品的良率，是目前亟待解决的技术问题。In the field of semiconductor manufacturing, the temperature control of wafer heat treatment equipment plays a vital role in the stability of semiconductor processes. For example, in the chip processing process, if the wafer heat treatment process is not heated evenly, it may cause the lattice to deform or become disordered. The lattice deformation will affect the crystal structure of the silicon wafer, which may change its electrical properties and eventually cause the silicon wafer to fail. Therefore, how to improve the effect of rapid wafer heat treatment, timely detect temperature anomalies that occur during the heat treatment process, and improve the yield of semiconductor products are technical problems that need to be solved urgently.
发明内容Summary of the invention
本发明为了解决以上问题，提出了一种高可控性纳米压印晶圆热处理监测方法。In order to solve the above problems, the present invention proposes a highly controllable nanoimprint wafer thermal treatment monitoring method.
本发明的技术方案是：一种高可控性纳米压印晶圆热处理监测方法包括以下步骤：The technical solution of the present invention is: a highly controllable nanoimprint wafer thermal treatment monitoring method comprises the following steps:
S1、在模板的目标图形与纳米压印晶圆的热处理过程中，采集晶圆的实时温度；S1. During the heat treatment process of the target pattern of the template and the nanoimprint wafer, the real-time temperature of the wafer is collected;
S2、根据晶圆的实时温度，为每个时刻构建三维温度向量和二维温度向量，生成晶圆的温度码；S2. According to the real-time temperature of the wafer, a three-dimensional temperature vector and a two-dimensional temperature vector are constructed for each moment to generate a temperature code of the wafer;
S3、根据晶圆的温度码，确定热处理过程是否存在加工异常。S3. Determine whether there is any processing abnormality in the heat treatment process according to the temperature code of the wafer.
纳米压印晶圆的热处理方法主要涉及到在特定温度和压强条件下，利用物理接触将掩模板上的图形转移到晶圆表面的过程。需要说明的是，在特定的温度和压强下，将模板压入抗蚀剂中，对于热压印工艺而言，这一过程通常伴随着加热步骤，使抗蚀剂达到玻璃相变点温度以上，从而具备足够的流动性以填充模板的图形空隙。The heat treatment method of nanoimprint wafer mainly involves the process of transferring the pattern on the mask to the wafer surface by physical contact under specific temperature and pressure conditions. It should be noted that under specific temperature and pressure, the template is pressed into the resist. For the hot embossing process, this process is usually accompanied by a heating step to make the resist reach a temperature above the glass transition point, so that it has sufficient fluidity to fill the pattern gaps of the template.
进一步地，S2包括以下子步骤：Furthermore, S2 includes the following sub-steps:
S21、将晶圆在下一时刻与当前时刻的温度差值、当前时刻的温度值以及当前时刻与上一时刻的温度差值组合，作为当前时刻的三维温度向量；S21, combining the temperature difference of the wafer at the next moment and the current moment, the temperature value at the current moment, and the temperature difference between the current moment and the previous moment as a three-dimensional temperature vector at the current moment;
S22、根据每个时刻的三维温度向量，确定每个时刻的热变化标量；S22, determining the heat change scalar at each moment according to the three-dimensional temperature vector at each moment;
S23、将热变化标量为偶数的时刻作为作为第一时刻序列，将热变化标量为奇数的时刻作为第二时刻序列，根据第一时刻序列和第二时刻序列确定晶圆在热处理过程中的温度程度值；S23, taking the moment when the thermal change scalar is an even number as the first moment sequence, taking the moment when the thermal change scalar is an odd number as the second moment sequence, and determining the temperature value of the wafer during the heat treatment process according to the first moment sequence and the second moment sequence;
S24、根据晶圆在热处理过程中的温度程度值生成晶圆的温度码。S24, generating a temperature code of the wafer according to the temperature value of the wafer during the heat treatment process.
上述进一步方案的有益效果是：在本发明中，根据连续时刻的温度值差值为每个时刻构建三维温度向量，确定每个时刻的变化情况，即热变化标量，热变化标量有-1、0和1三种情况，根据热变化量的奇偶情况，划分时刻序列，确定整个热处理过程的温度程度值，利用温度程度值再来构建二维温度向量，参与温度码生成。The beneficial effect of the above further scheme is: in the present invention, a three-dimensional temperature vector is constructed for each moment according to the difference in temperature values at consecutive moments, and the change at each moment, that is, the thermal change scalar, is determined. The thermal change scalar has three conditions: -1, 0 and 1. According to the parity of the thermal change amount, the moment sequence is divided to determine the temperature degree value of the entire heat treatment process. The temperature degree value is then used to construct a two-dimensional temperature vector to participate in the generation of the temperature code.
S21中，第i时刻的三维温度向量ji的计算公式为：；式中，pi-1表示第i-1时刻晶圆的温度，pi表示第i时刻晶圆的温度，pi+1表示第i+1时刻晶圆的温度。In S21, the calculation formula of the three-dimensional temperature vector j i at the i-th moment is: ; In the formula, pi -1 represents the temperature of the wafer at the i-1th moment, pi represents the temperature of the wafer at the i-th moment, and pi +1 represents the temperature of the wafer at the i+1th moment.
进一步地，S22中，第i时刻的热变化标量Ji的计算公式为：；式中，ji-1表示第i-1时刻的三维温度向量，ji表示第i时刻的三维温度向量，ji+1表示第i+1时刻的三维温度向量，sgn(·)表示符号函数，×表示向量叉乘操作。Furthermore, in S22, the calculation formula of the heat change scalar Ji at the i-th moment is: ; In the formula, j i-1 represents the three-dimensional temperature vector at the i-1th moment, j i represents the three-dimensional temperature vector at the i-th moment, j i+1 represents the three-dimensional temperature vector at the i+1th moment, sgn(·) represents the sign function, and × represents the vector cross multiplication operation.
进一步地，S23中，晶圆在热处理过程中的温度程度值P的计算公式为：；式中，pm表示第一序列中第m个时刻对应的温度值，pn表示第二序列中第n个时刻对应的温度值，M表示第一序列包含的时刻总数，N表示第二序列包含的时刻总数，random(·)表示0-1的随机函数，c表示常数。Furthermore, in S23, the calculation formula of the temperature value P of the wafer during the heat treatment process is: ; Wherein, pm represents the temperature value corresponding to the mth moment in the first sequence, pn represents the temperature value corresponding to the nth moment in the second sequence, M represents the total number of moments included in the first sequence, N represents the total number of moments included in the second sequence, random(·) represents a random function of 0-1, and c represents a constant.
进一步地，S24包括以下子步骤：Further, S24 includes the following sub-steps:
S241、对晶圆在热处理过程中的温度程度值进行向上取整；S241, rounding up the temperature value of the wafer during the heat treatment process;
S242、根据向上取整后的温度程度值与每个时刻的温度值组合，得到每个时刻的二维温度向量；S242, combining the rounded-up temperature value with the temperature value at each moment to obtain a two-dimensional temperature vector at each moment;
S243、将温度程度值与所有时刻的温度值均值组合，得到程度向量；S243, combining the temperature degree value with the mean temperature value at all times to obtain a degree vector;
S244、根据程度向量以及每个时刻的二维温度向量，生成晶圆的温度码。S244 , generating a temperature code of the wafer according to the degree vector and the two-dimensional temperature vector at each moment.
上述进一步方案的有益效果是：在本发明中，温度程度值根据热变化量的三种值情况生成，可以为每个时刻再生成一个二维温度向量，减少温度码生成时的运算难度，便于生成温度码。每个时刻的二维温度向量Xi的表达式为：；式中，pi表示第i时刻晶圆的温度，P表示晶圆在热处理过程中的温度程度值，表示向上取整。程度向量Y的表达式为：；式中，pave表示所有时刻的温度值均值。The beneficial effect of the above further scheme is that in the present invention, the temperature degree value is generated according to the three values of the thermal change amount, and a two-dimensional temperature vector can be generated for each moment, which reduces the difficulty of calculation when generating the temperature code and facilitates the generation of the temperature code. The expression of the two-dimensional temperature vector Xi at each moment is: ; In the formula, pi represents the temperature of the wafer at the i-th moment, P represents the temperature value of the wafer during the heat treatment process, Indicates rounding up. The expression of degree vector Y is: ; In the formula, p ave represents the mean temperature value at all times.
进一步地，S244中，晶圆的温度码K的计算公式为：；式中，Y表示程度向量，Xi表示第i时刻的二维温度向量，tanh(·)表示双曲正切函数，exp(·)表示指数函数，I表示总时刻。Furthermore, in S244, the calculation formula of the temperature code K of the wafer is: ; Where Y represents the degree vector, Xi represents the two-dimensional temperature vector at the i-th moment, tanh(·) represents the hyperbolic tangent function, exp(·) represents the exponential function, and I represents the total time.
进一步地，S3包括以下子步骤：Furthermore, S3 includes the following sub-steps:
S31、根据晶圆的温度码以及晶圆的实时温度，生成晶圆的热处理温度量；S31, generating a heat treatment temperature value of the wafer according to the temperature code of the wafer and the real-time temperature of the wafer;
S32、判断热处理温度量是否属于晶圆的可控温度范围，若是则热处理过程不存在加工异常，否则热处理过程存在加工异常。S32, determining whether the heat treatment temperature is within the controllable temperature range of the wafer, if so, there is no processing abnormality in the heat treatment process, otherwise there is a processing abnormality in the heat treatment process.
晶圆的可控温度范围由自身特性决定或人为设置。The controllable temperature range of the wafer is determined by its own characteristics or set manually.
进一步地，S31中，晶圆的热处理温度量G的计算公式为：；式中，Pmean表示所有时刻的温度值的中位数，K表示晶圆的温度码。Furthermore, in S31, the calculation formula of the heat treatment temperature G of the wafer is: ; Where P mean represents the median of the temperature values at all times, and K represents the temperature code of the wafer.
本发明的有益效果是：本发明为实时监测的晶圆温度构建二维温度向量和三维温度向量，生成特定温度码，再结合整个时刻的温度中位数，确定热处理过程中是否存在温度异常；本发明可以显著提高纳米压印晶圆热处理过程的可控性和稳定性，提高了温度检测的灵敏度和准确性，避免出现加工失误。The beneficial effects of the present invention are as follows: the present invention constructs a two-dimensional temperature vector and a three-dimensional temperature vector for real-time monitoring of wafer temperature, generates a specific temperature code, and then combines the median temperature at the entire moment to determine whether there is a temperature anomaly during the heat treatment process; the present invention can significantly improve the controllability and stability of the nanoimprint wafer heat treatment process, improve the sensitivity and accuracy of temperature detection, and avoid processing errors.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为高可控性纳米压印晶圆热处理监测方法的流程图。FIG1 is a flow chart of a highly controllable nanoimprint wafer thermal processing monitoring method.
具体实施方式DETAILED DESCRIPTION
下面结合附图对本发明的实施例作进一步的说明。The embodiments of the present invention will be further described below in conjunction with the accompanying drawings.
如图1所示，本发明提供了一种高可控性纳米压印晶圆热处理监测方法，包括以下步骤：As shown in FIG1 , the present invention provides a highly controllable nanoimprint wafer thermal processing monitoring method, comprising the following steps:
S1、在模板的目标图形与纳米压印晶圆的热处理过程中，采集晶圆的实时温度；S1. During the heat treatment process of the target pattern of the template and the nanoimprint wafer, the real-time temperature of the wafer is collected;
S2、根据晶圆的实时温度，为每个时刻构建三维温度向量和二维温度向量，生成晶圆的温度码；S2. According to the real-time temperature of the wafer, a three-dimensional temperature vector and a two-dimensional temperature vector are constructed for each moment to generate a temperature code of the wafer;
S3、根据晶圆的温度码，确定热处理过程是否存在加工异常。S3. Determine whether there is any processing abnormality in the heat treatment process according to the temperature code of the wafer.
纳米压印晶圆的热处理方法主要涉及到在特定温度和压强条件下，利用物理接触将掩模板上的图形转移到晶圆表面的过程。需要说明的是，在特定的温度和压强下，将模板压入抗蚀剂中，对于热压印工艺而言，这一过程通常伴随着加热步骤，使抗蚀剂达到玻璃相变点温度以上，从而具备足够的流动性以填充模板的图形空隙。The heat treatment method of nanoimprint wafer mainly involves the process of transferring the pattern on the mask to the wafer surface by physical contact under specific temperature and pressure conditions. It should be noted that under specific temperature and pressure, the template is pressed into the resist. For the hot embossing process, this process is usually accompanied by a heating step to make the resist reach a temperature above the glass transition point, so that it has sufficient fluidity to fill the pattern gaps of the template.
在本发明实施例中，S2包括以下子步骤：In this embodiment of the present invention, S2 includes the following sub-steps:
S21、将晶圆在下一时刻与当前时刻的温度差值、当前时刻的温度值以及当前时刻与上一时刻的温度差值组合，作为当前时刻的三维温度向量；S21, combining the temperature difference of the wafer at the next moment and the current moment, the temperature value at the current moment, and the temperature difference between the current moment and the previous moment as a three-dimensional temperature vector at the current moment;
S22、根据每个时刻的三维温度向量，确定每个时刻的热变化标量；S22, determining the heat change scalar at each moment according to the three-dimensional temperature vector at each moment;
S23、将热变化标量为偶数的时刻作为作为第一时刻序列，将热变化标量为奇数的时刻作为第二时刻序列，根据第一时刻序列和第二时刻序列确定晶圆在热处理过程中的温度程度值；S23, taking the moment when the thermal change scalar is an even number as the first moment sequence, taking the moment when the thermal change scalar is an odd number as the second moment sequence, and determining the temperature value of the wafer during the heat treatment process according to the first moment sequence and the second moment sequence;
S24、根据晶圆在热处理过程中的温度程度值生成晶圆的温度码。S24, generating a temperature code of the wafer according to the temperature value of the wafer during the heat treatment process.
在本发明中，根据连续时刻的温度值差值为每个时刻构建三维温度向量，确定每个时刻的变化情况，即热变化标量，热变化标量有-1、0和1三种情况，根据热变化量的奇偶情况，划分时刻序列，确定整个热处理过程的温度程度值，利用温度程度值再来构建二维温度向量，参与温度码生成。In the present invention, a three-dimensional temperature vector is constructed for each moment according to the temperature value difference at consecutive moments, and the change at each moment, i.e., the thermal change scalar, is determined. The thermal change scalar has three conditions: -1, 0 and 1. The moment sequence is divided according to the parity of the thermal change amount, and the temperature degree value of the entire heat treatment process is determined. The temperature degree value is then used to construct a two-dimensional temperature vector to participate in the generation of the temperature code.
S21中，第i时刻的三维温度向量ji的计算公式为：；式中，pi-1表示第i-1时刻晶圆的温度，pi表示第i时刻晶圆的温度，pi+1表示第i+1时刻晶圆的温度。In S21, the calculation formula of the three-dimensional temperature vector j i at the i-th moment is: ; In the formula, pi -1 represents the temperature of the wafer at the i-1th moment, pi represents the temperature of the wafer at the i-th moment, and pi +1 represents the temperature of the wafer at the i+1th moment.
在本发明实施例中，S22中，第i时刻的热变化标量Ji的计算公式为：；式中，ji-1表示第i-1时刻的三维温度向量，ji表示第i时刻的三维温度向量，ji+1表示第i+1时刻的三维温度向量，sgn(·)表示符号函数，×表示向量叉乘操作。In the embodiment of the present invention, in S22, the calculation formula of the heat change scalar Ji at the i-th moment is: ; In the formula, j i-1 represents the three-dimensional temperature vector at the i-1th moment, j i represents the three-dimensional temperature vector at the i-th moment, j i+1 represents the three-dimensional temperature vector at the i+1th moment, sgn(·) represents the sign function, and × represents the vector cross multiplication operation.
在本发明实施例中，S23中，晶圆在热处理过程中的温度程度值P的计算公式为：；式中，pm表示第一序列中第m个时刻对应的温度值，pn表示第二序列中第n个时刻对应的温度值，M表示第一序列包含的时刻总数，N表示第二序列包含的时刻总数，random(·)表示0-1的随机函数，c表示常数。In the embodiment of the present invention, in S23, the calculation formula of the temperature value P of the wafer during the heat treatment process is: ; Wherein, pm represents the temperature value corresponding to the mth moment in the first sequence, pn represents the temperature value corresponding to the nth moment in the second sequence, M represents the total number of moments included in the first sequence, N represents the total number of moments included in the second sequence, random(·) represents a random function of 0-1, and c represents a constant.
在本发明实施例中，S24包括以下子步骤：In this embodiment of the present invention, S24 includes the following sub-steps:
S241、对晶圆在热处理过程中的温度程度值进行向上取整；S241, rounding up the temperature value of the wafer during the heat treatment process;
S242、根据向上取整后的温度程度值与每个时刻的温度值组合，得到每个时刻的二维温度向量；S242, combining the rounded-up temperature value with the temperature value at each moment to obtain a two-dimensional temperature vector at each moment;
S243、将温度程度值与所有时刻的温度值均值组合，得到程度向量；S243, combining the temperature degree value with the mean temperature value at all times to obtain a degree vector;
S244、根据程度向量以及每个时刻的二维温度向量，生成晶圆的温度码。S244 , generating a temperature code of the wafer according to the degree vector and the two-dimensional temperature vector at each moment.
在本发明中，温度程度值根据热变化量的三种值情况生成，可以为每个时刻再生成一个二维温度向量，减少温度码生成时的运算难度，便于生成温度码。每个时刻的二维温度向量Xi的表达式为：；式中，pi表示第i时刻晶圆的温度，P表示晶圆在热处理过程中的温度程度值，表示向上取整。程度向量Y的表达式为：；式中，pave表示所有时刻的温度值均值。In the present invention, the temperature value is generated according to the three values of the thermal variation, and a two-dimensional temperature vector can be generated for each moment, which reduces the difficulty of calculation when generating the temperature code and facilitates the generation of the temperature code. The expression of the two-dimensional temperature vector Xi at each moment is: ; In the formula, pi represents the temperature of the wafer at the i-th moment, P represents the temperature value of the wafer during the heat treatment process, Indicates rounding up. The expression of degree vector Y is: ; In the formula, p ave represents the mean temperature value at all times.
在本发明实施例中，S244中，晶圆的温度码K的计算公式为：；式中，Y表示程度向量，Xi表示第i时刻的二维温度向量，tanh(·)表示双曲正切函数，exp(·)表示指数函数，I表示总时刻。In the embodiment of the present invention, in S244, the calculation formula of the temperature code K of the wafer is: ; Where Y represents the degree vector, Xi represents the two-dimensional temperature vector at the i-th moment, tanh(·) represents the hyperbolic tangent function, exp(·) represents the exponential function, and I represents the total time.
在本发明实施例中，S3包括以下子步骤：In this embodiment of the present invention, S3 includes the following sub-steps:
S31、根据晶圆的温度码以及晶圆的实时温度，生成晶圆的热处理温度量；S31, generating a heat treatment temperature value of the wafer according to the temperature code of the wafer and the real-time temperature of the wafer;
S32、判断热处理温度量是否属于晶圆的可控温度范围，若是则热处理过程不存在加工异常，否则热处理过程存在加工异常。S32, determining whether the heat treatment temperature is within the controllable temperature range of the wafer, if yes, there is no processing abnormality in the heat treatment process, otherwise there is a processing abnormality in the heat treatment process.
晶圆的可控温度范围由自身特性决定或人为设置。The controllable temperature range of the wafer is determined by its own characteristics or set manually.
在本发明实施例中，S31中，晶圆的热处理温度量G的计算公式为：；式中，Pmean表示所有时刻的温度值的中位数，K表示晶圆的温度码。In the embodiment of the present invention, in S31, the calculation formula of the heat treatment temperature G of the wafer is: ; Where P mean represents the median of the temperature values at all times, and K represents the temperature code of the wafer.
本领域的普通技术人员将会意识到，这里所述的实施例是为了帮助读者理解本发明的原理，应被理解为本发明的保护范围并不局限于这样的特别陈述和实施例。本领域的普通技术人员可以根据本发明公开的这些技术启示做出各种不脱离本发明实质的其它各种具体变形和组合，这些变形和组合仍然在本发明的保护范围内。Those skilled in the art will appreciate that the embodiments described herein are intended to help readers understand the principles of the present invention, and should be understood that the protection scope of the present invention is not limited to such specific statements and embodiments. Those skilled in the art can make various other specific variations and combinations that do not deviate from the essence of the present invention based on the technical revelations disclosed by the present invention, and these variations and combinations are still within the protection scope of the present invention.
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|---|---|---|---|---|
| CN101144988A (en) * | 2006-09-13 | 2008-03-19 | 沈阳芯源先进半导体技术有限公司 | Temperature gradient controllable wafer front-drying method and its hot plate type front drying device |
| CN103474381A (en) * | 2013-09-22 | 2013-12-25 | 上海华力微电子有限公司 | Method utilizing temperature difference for monitoring positional deviation of wafer in high temperature cavity |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5001327A (en) * | 1987-09-11 | 1991-03-19 | Hitachi, Ltd. | Apparatus and method for performing heat treatment on semiconductor wafers |
| JP3857657B2 (en) * | 2000-09-13 | 2006-12-13 | 東京エレクトロン株式会社 | Substrate processing equipment |
| US7279721B2 (en) * | 2005-04-13 | 2007-10-09 | Applied Materials, Inc. | Dual wavelength thermal flux laser anneal |
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| CN113186520B (en) * | 2021-04-29 | 2022-09-16 | 北京北方华创微电子装备有限公司 | Reaction chamber, semiconductor processing equipment and base temperature control method |
| CN117250208B (en) * | 2023-11-20 | 2024-02-06 | 青岛天仁微纳科技有限责任公司 | Machine vision-based nano-imprint wafer defect accurate detection system and method |
| CN221440793U (en) * | 2023-12-01 | 2024-07-30 | 扬州鼎众科技有限公司 | Metal material heat treatment device capable of being cooled rapidly |
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