Nothing Special   »   [go: up one dir, main page]

CN118416977A - Microfluidic chip - Google Patents

Microfluidic chip Download PDF

Info

Publication number
CN118416977A
CN118416977A CN202410874605.7A CN202410874605A CN118416977A CN 118416977 A CN118416977 A CN 118416977A CN 202410874605 A CN202410874605 A CN 202410874605A CN 118416977 A CN118416977 A CN 118416977A
Authority
CN
China
Prior art keywords
photosensitive
substrate
analyzed
light
microfluidic chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202410874605.7A
Other languages
Chinese (zh)
Other versions
CN118416977B (en
Inventor
蒲洋
徐培
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HKC Co Ltd
Original Assignee
HKC Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HKC Co Ltd filed Critical HKC Co Ltd
Priority to CN202410874605.7A priority Critical patent/CN118416977B/en
Publication of CN118416977A publication Critical patent/CN118416977A/en
Application granted granted Critical
Publication of CN118416977B publication Critical patent/CN118416977B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • B01L3/50273Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the means or forces applied to move the fluids
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • B01L3/502769Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by multiphase flow arrangements
    • B01L3/502784Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by multiphase flow arrangements specially adapted for droplet or plug flow, e.g. digital microfluidics
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/003Measuring arrangements characterised by the use of electric or magnetic techniques for measuring position, not involving coordinate determination
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2400/00Moving or stopping fluids
    • B01L2400/04Moving fluids with specific forces or mechanical means
    • B01L2400/0403Moving fluids with specific forces or mechanical means specific forces
    • B01L2400/0415Moving fluids with specific forces or mechanical means specific forces electrical forces, e.g. electrokinetic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Hematology (AREA)
  • Clinical Laboratory Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Automatic Analysis And Handling Materials Therefor (AREA)

Abstract

The application provides a microfluidic chip, which comprises a microfluidic component, a plurality of photosensitive components and a current detection unit. The microfluidic component is provided with a containing space for containing liquid drops to be analyzed, and the photosensitive components are arranged in the microfluidic component. The photosensitive components are respectively and electrically connected with a power supply and a current detection unit, and the power supply is used for providing carriers for the photosensitive components. The liquid drop to be analyzed is used for reducing the brightness of light transmitted through the liquid drop to be analyzed, so that the brightness received by the photosensitive assembly, the position of which corresponds to the liquid drop to be analyzed, is reduced, the photosensitive assembly is used for generating induced current according to the received light and transmitting the induced current to the current detection unit, the brightness of the light received by the photosensitive assembly is in direct proportion to the generated induced current, the current detection unit is used for detecting the change of the induced current so as to detect the position of the liquid drop to be analyzed, and the position of the liquid drop to be analyzed is detected by the microfluidic chip in real time.

Description

Microfluidic chip
Technical Field
The application relates to the technical field of microfluidics, in particular to a microfluidic chip.
Background
The microfluidic chip technology (Micro Fluidics) integrates basic operation units of sample preparation, reaction, separation, detection and the like in biological, chemical and medical analysis processes on a micron-scale chip, and automatically completes the whole analysis process. The microfluidic chip has the advantages of high flux, high speed, low power consumption, less material consumption and the like.
And dripping the liquid drop to be analyzed into a microfluidic chip, wherein the microfluidic chip can drive the liquid to move in the microfluidic chip. Furthermore, the skilled person also wants the microfluidic chip to be able to detect the position of the droplet to be analyzed in real time for further manipulation or processing of the droplet to be analyzed. However, the microfluidic chip in the prior art cannot detect the position of the droplet to be analyzed in real time.
Therefore, how to solve the problem that the microfluidic chip cannot detect the position of the droplet to be analyzed in real time in the prior art is a urgent need for those skilled in the art.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present application is to provide a microfluidic chip, which aims to solve the problem that the microfluidic chip in the prior art cannot detect the position of a droplet to be analyzed in real time.
In order to solve the technical problems, an embodiment of the application provides a microfluidic chip, which comprises a microfluidic component, a plurality of photosensitive components and a current detection unit. The microfluidic component is provided with a containing space for containing liquid drops to be analyzed, and the microfluidic component is used for driving the liquid drops to be analyzed to move in the containing space. The photosensitive assemblies are arranged in a single layer on a plane formed by the first direction and the second direction, the photosensitive assemblies are arranged in the microfluidic assemblies, and the photosensitive assemblies are arranged at intervals in the accommodating space along the third direction. The first direction, the second direction and the third direction are perpendicular to each other. Each photosensitive assembly is electrically connected with a power supply and the current detection unit respectively, and the power supply is used for providing carriers for the photosensitive assemblies. The liquid drop to be analyzed is used for reducing the brightness of light transmitted through the liquid drop to be analyzed, so that the brightness received by the photosensitive assembly, the position of which corresponds to the liquid drop to be analyzed, is reduced, the photosensitive assembly is used for generating induced current according to the received light, and transmitting the induced current to the current detection unit, the brightness of the light received by the photosensitive assembly is in direct proportion to the generated induced current, and the current detection unit is used for detecting the change of the induced current so as to determine the position of the liquid drop to be analyzed.
In summary, the microfluidic chip provided by the application includes a plurality of photosensitive assemblies and a current detection unit, the brightness of light transmitted through the microfluidic chip is reduced by the droplet to be analyzed, so that the brightness received by the photosensitive assemblies, the positions of which correspond to the droplet to be analyzed, is reduced, the induced current generated by the photosensitive assemblies according to the received light is also changed, and then the current detection unit determines the position of the droplet to be analyzed according to the change of the detected induced current, so that the microfluidic chip can detect the position of the droplet to be analyzed in real time.
In an exemplary embodiment, a plurality of photosensitive assemblies are distributed in a plurality of rows and a plurality of columns, each photosensitive assembly includes a control transistor and a photosensitive element, and the control transistor includes a control end, a first connection end and a second connection end. Each photosensitive element is electrically connected with the power supply and the first connecting end of one control transistor respectively, the control transistor is used for controlling the connection or disconnection between the first connecting end and the second connecting end, and the first connecting ends and the second connecting ends of a plurality of control transistors in one row are simultaneously connected or disconnected. The current detection unit comprises a plurality of detection subunits, and each detection subunit is electrically connected with a plurality of second connection terminals of the control transistors in a column. The light sensing element is used for generating induced current according to received light rays and transmitting the induced current to the detection subunit, the brightness of the light rays received by the light sensing element is in direct proportion to the generated induced current, and the detection subunit is used for detecting the change of the induced current to determine the position of the liquid drop to be analyzed.
In an exemplary embodiment, a plurality of photosensitive assemblies are distributed in a plurality of rows and a plurality of columns, each photosensitive assembly comprises a photosensitive element, and each photosensitive element is electrically connected with the power supply. The current detection unit comprises a plurality of first detection subunits and a plurality of second detection subunits, wherein each first detection subunit is electrically connected with a plurality of photosensitive elements in a column, and each second detection subunit is electrically connected with a plurality of photosensitive elements in a row. The light sensing element is used for generating induced current according to received light rays and transmitting the induced current to the first detection subunit and the second detection subunit, and the brightness of the light rays received by the light sensing element is in direct proportion to the generated induced current. The first detection subunit is used for determining a first coordinate point of the photosensitive element according to the change of the induced current, the second detection subunit is used for determining a second coordinate point of the photosensitive element according to the change of the induced current, and the first coordinate point and the second coordinate point are used for determining the position of the liquid drop to be analyzed.
In an exemplary embodiment, each of the photosensitive assemblies includes a photosensitive element, areas of the photosensitive elements receiving light are different from each other, and the photosensitive elements are electrically connected to the current detecting unit. The light sensing elements are used for generating induced currents according to received light, the size of the area of each light sensing element for receiving the light is in direct proportion to the size of the induced current generated by the light sensing elements, the induced currents generated by the light sensing elements form total induced currents, the total induced currents are transmitted to the current detection unit, and the current detection unit determines the positions of the liquid drops to be analyzed according to the change of the total induced currents.
In an exemplary embodiment, each of the photosensitive assemblies includes a photosensitive element, the doping amounts of the photosensitive elements are different, and the photosensitive elements are electrically connected to the current detecting unit. The photosensitive elements are used for generating induced currents according to received light rays, and the doping amount of each photosensitive element is proportional to the induced current generated by the photosensitive element. The induced currents generated by the photosensitive elements form a total induced current, the total induced current is transmitted to the current detection unit, and the current detection unit determines the position of the liquid drop to be analyzed according to the variation of the total induced current.
In an exemplary embodiment, the material of the photosensitive element includes at least one of monocrystalline silicon, polycrystalline silicon, amorphous silicon, gallium arsenide, and copper indium selenium material.
In an exemplary embodiment, the microfluidic component includes a first substrate and a second substrate, the first substrate includes a first hydrophobic layer, a first dielectric layer, a common electrode and a first base stacked on one side of the second substrate, and the first dielectric layer insulates the first hydrophobic layer and the common electrode.
In an exemplary embodiment, the second substrate includes a second base, a driving circuit layer, a plurality of driving electrodes, a second dielectric layer, and a second hydrophobic layer, and the second base and the first substrate are opposite to each other along the third direction and are disposed at intervals. The driving circuit layer is arranged on the surface of the second substrate facing the first substrate, the second dielectric layer covers a plurality of driving electrodes to the surface of the driving circuit layer facing away from the second substrate, and the second hydrophobic layer is arranged on the surface of the second dielectric layer facing away from the driving circuit layer. The second dielectric layer insulates the driving electrode from the second hydrophobic layer, and the second hydrophobic layer and the first hydrophobic layer enclose the accommodating space. The driving circuit layer comprises a plurality of driving transistors, the position of one driving transistor corresponds to the position of one driving electrode in the third direction, the position of the driving transistor is staggered with the position of the photosensitive assembly in the third direction, and the driving transistor is electrically connected with the driving electrode corresponding to the position.
In an exemplary embodiment, the photosensitive assembly is disposed inside the first substrate, and light is emitted to the photosensitive assembly from a side of the second substrate opposite to the first substrate.
In an exemplary embodiment, the photosensitive assembly is disposed inside the second substrate, and light is emitted to the photosensitive assembly from a side of the first substrate opposite to the second substrate. The microfluidic chip further comprises a plurality of refraction elements, the refraction elements are arranged on one side, opposite to the second substrate, of the first substrate, the positions of the refraction elements in the third direction correspond to the positions of the driving transistors, and the refraction elements are used for refracting light emitted to the microfluidic chip to the photosensitive assembly.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic layer structure of a microfluidic chip according to a first embodiment of the present application;
FIG. 2 is a schematic diagram of a circuit connection of the photosensitive assembly shown in FIG. 1;
FIG. 3 is a schematic diagram of the principle of reducing the brightness of light for a droplet to be analyzed;
fig. 4 is a schematic structural view of the microfluidic assembly shown in fig. 1;
FIG. 5 is a schematic circuit diagram of the driving circuit layer and the photosensitive assembly shown in FIG. 1;
fig. 6 is a schematic layer structure of a microfluidic chip according to a second embodiment of the present application;
FIG. 7 is a schematic diagram of a circuit connection of the photosensitive assembly shown in FIG. 6;
FIG. 8 is a schematic circuit diagram of the driving circuit layer and the photosensitive assembly shown in FIG. 6;
Fig. 9 is a schematic layer structure of a microfluidic chip according to a third embodiment of the present application;
fig. 10 is a schematic layer structure of a microfluidic chip according to a fourth embodiment of the present application;
Fig. 11 is a schematic layer structure of a microfluidic chip according to a fifth embodiment of the present application;
Fig. 12 is a schematic distribution diagram of photosensitive components of a microfluidic chip according to a sixth embodiment of the present application;
fig. 13 is a schematic distribution diagram of photosensitive components of a microfluidic chip according to a seventh embodiment of the present application.
Reference numerals illustrate:
1-a microfluidic chip; 2-droplets to be analyzed; 2 a-a first sub-droplet; 2 b-a second sub-droplet; 10-a microfluidic component; 10 a-accommodating space; 20-a photosensitive assembly; 21-a control transistor; 22-a photosensitive element; 22 a-a first photosensitive element; 22 b-a second photosensitive element; 30-a current detection unit; 31-a detection subunit; 32-a first detection subunit; 33-a second detection subunit; a 50-refractive element; 110-a first substrate; 111-a first hydrophobic layer; 112-a first dielectric layer; 113-a common electrode; 114-a first substrate; 115-a second insulating layer; 116-a second passivation layer; 120-a second substrate; 121-a second substrate; 122-a driving circuit layer; 123-driving electrodes; 123 a-a first drive electrode; 123 b-a second drive electrode; 124-a second dielectric layer; 125-a second hydrophobic layer; 211-control end; 212-an active layer; 213-a first connection; 214-a second connection; 1221-a first conductive line; 1222-a second conductive line; 1223-a first insulating layer; 1224-a first passivation layer; a-a first wiring; b-a second trace; c-a third wiring; t1-drive transistor; a T1 a-gate; t1 b-source; t1 c-drain; t1 d-channel; g-functional region.
Detailed Description
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. The drawings illustrate preferred embodiments of the application. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
The following description of the embodiments refers to the accompanying drawings, which illustrate specific embodiments in which the application may be practiced. The numbering of the components itself, e.g. "first", "second", etc., is used herein merely to distinguish between the described objects and does not have any sequential or technical meaning. The term "coupled" as used herein includes both direct and indirect coupling (coupling), unless otherwise indicated. Directional terms, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outer", "side", etc., in the present application are merely referring to the directions of the attached drawings, and thus, directional terms are used for better, more clear explanation and understanding of the present application, rather than indicating or implying that the apparatus or element being referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present application.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; may be a mechanical connection; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art. It should be noted that the terms "first," "second," and the like in the description and claims of the present application and in the drawings are used for distinguishing between different objects and not for describing a particular sequential order. Furthermore, the terms "comprises," "comprising," "includes," "including," or "having," when used in this specification, are intended to specify the presence of stated features, operations, elements, etc., but do not limit the presence of one or more other features, operations, elements, etc., but are not limited to other features, operations, elements, etc. Furthermore, the terms "comprises" or "comprising" mean that there is a corresponding feature, number, step, operation, element, component, or combination thereof disclosed in the specification, and that there is no intention to exclude the presence or addition of one or more other features, numbers, steps, operations, elements, components, or combinations thereof. It will also be understood that the meaning of "at least one" as described herein is one and more, such as one, two or three, etc., and the meaning of "a plurality" is at least two, such as two or three, etc., unless specifically defined otherwise.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
The microfluidic chip is applied to the fields of drug screening, microorganism identification, medical equipment and the like, and has the advantages of high flux, high speed, low power consumption, less material consumption and the like. Referring to fig. 1 and fig. 2, fig. 1 is a schematic layer structure diagram of a microfluidic chip according to a first embodiment of the present application, and fig. 2 is a schematic circuit connection diagram of a photosensitive assembly shown in fig. 1. The microfluidic chip 1 includes a microfluidic component 10, a plurality of photosensitive components 20, and a current detection unit 30. The microfluidic component 10 is provided with a containing space 10a for containing the liquid drop 2 to be analyzed, that is, the liquid drop 2 to be analyzed is contained in the containing space 10a, and the microfluidic component 10 is used for driving the liquid drop 2 to be analyzed to move in the containing space 10a.
For convenience of description, the width direction of the microfluidic assembly 10 is defined as an X-axis direction, the length direction of the microfluidic assembly 10 is defined as a Y-axis direction, and the height direction of the microfluidic assembly 10 is defined as a Z-axis direction. Wherein, X axis direction, Y axis direction and Z axis direction are mutually perpendicular two by two. The X-axis direction may be a first direction, the Y-axis direction may be a second direction, and the Z-axis direction may be a third direction.
It should be noted that, for convenience of describing the structures of the microfluidic device 10 and the photosensitive device 20, only one photosensitive device 20 is shown in fig. 1, and in fact, the number of photosensitive devices 20 may be plural.
The photosensitive assemblies 20 are arranged in a single layer on a plane formed by the X-axis direction and the Y-axis direction, that is, the photosensitive assemblies 20 are all arranged on the same plane and are perpendicular to the Z-axis direction, that is, the photosensitive assemblies 20 are all arranged on the same plane perpendicular to the Z-axis direction. In some embodiments, a plurality of the photosensitive elements 20 may exhibit an array distribution (a multi-row multi-column distribution). In other embodiments, the distribution of the photosensitive members 20 may correspond to the path along which the droplet 2 to be analyzed moves, which is not particularly limited by the present application.
The plurality of photosensitive assemblies 20 are disposed inside the microfluidic assembly 10. The photosensitive assemblies 20 are disposed at intervals from the accommodating space 10a in the Z-axis direction, that is, the photosensitive assemblies 20 are disposed on one side of the accommodating space 10a along the Z-axis direction or the accommodating space 10a is disposed on one side of the photosensitive assemblies 20 along the Z-axis direction. Each photosensitive assembly 20 is spaced apart from the accommodating space 10 a. Each photosensitive assembly 20 is electrically connected to a power source and the current detecting unit 30, respectively.
Referring to fig. 1 and 3, fig. 3 is a schematic diagram of a principle of reducing brightness of light of a droplet to be analyzed, and a line arrow in fig. 3 is a propagation direction of light. The power supply is used for providing carriers to the photosensitive assembly 20, and the liquid drop 2 to be analyzed is used for reducing the brightness of light transmitted through the liquid drop 2 to be analyzed, so that the brightness received by the photosensitive assembly 20 at the position corresponding to the liquid drop 2 to be analyzed is reduced. The photosensitive assembly 20 is configured to generate an induced current according to the received light, and transmit the induced current to the current detection unit 30, where the brightness of the light received by the photosensitive assembly 20 is proportional to the magnitude of the generated induced current. The current detection unit 30 is configured to detect a change in the induced current to determine the position of the photosensitive member 20, and thus the position of the droplet 2 to be analyzed.
It should be noted that, if the droplet 2 to be analyzed is transparent, the droplet 2 to be analyzed may refract and reflect light, such that the brightness of the light transmitted through itself is reduced. If the drop 2 to be analyzed is non-transparent (e.g., colored), the drop 2 to be analyzed may simultaneously refract, reflect, and absorb light such that the brightness of the light transmitted through itself is reduced.
Referring to fig. 1 and 4, fig. 4 is a schematic structural diagram of the microfluidic component shown in fig. 1. The microfluidic assembly 10 includes a first substrate 110 and a second substrate 120. The first substrate 110 and the second substrate 120 are sequentially disposed at intervals along the Z-axis direction, the first substrate 110 and the second substrate 120 enclose the accommodating space 10a, the second substrate 120 is configured to drive the droplet 2 to be analyzed to move in the accommodating space 10a, and specifically, the second substrate 120 is configured to drive the droplet 2 to be analyzed to move along a plane where the second substrate 120 is located.
Specifically, the first substrate 110 includes a first hydrophobic layer 111, a first dielectric layer 112, a common electrode 113 and a first base 114, which are sequentially stacked on one side of the second substrate 120. That is, the first hydrophobic layer 111 is disposed on one side of the second substrate 120, and the first hydrophobic layer 111 is spaced apart from the second substrate 120. The first dielectric layer 112 is disposed on a surface of the first hydrophobic layer 111 opposite to the second substrate 120, the common electrode 113 is disposed on a surface of the first dielectric layer 112 opposite to the first hydrophobic layer 111, and the first substrate 114 is disposed on a surface of the common electrode 113 opposite to the first dielectric layer 112. The first dielectric layer 112 insulates the first hydrophobic layer 111 and the common electrode 113.
In the embodiment of the application, the second substrate 120 includes a second substrate 121, a driving circuit layer 122, a plurality of driving electrodes 123, a second dielectric layer 124 and a second hydrophobic layer 125. The second substrate 121 is opposite to and spaced apart from the first substrate 110, the driving circuit layer 122 is disposed on a surface of the second substrate 121 facing the first substrate 110, the driving electrodes 123 are disposed on a surface of the driving circuit layer 122 opposite to the second substrate 121, and the driving electrodes 123 are spaced apart from each other. The second dielectric layer 124 is disposed on a surface of the driving circuit layer 122 opposite to the second substrate 121, and the second dielectric layer 124 covers the driving electrodes 123, i.e. the second dielectric layer 124 covers the driving electrodes 123 to the surface of the driving circuit layer 122 opposite to the second substrate 121. The second hydrophobic layer 125 is disposed on a surface of the second dielectric layer 124 opposite to the driving circuit layer 122. The second hydrophobic layer 125 and the first hydrophobic layer 111 enclose the accommodating space 10a. The driving circuit layer 122 is electrically connected to the driving electrodes 123, and the second dielectric layer 124 insulates the driving electrodes 123 from the second hydrophobic layer 125.
Wherein the droplet 2 to be analyzed is in contact with the first hydrophobic layer 111 and the second hydrophobic layer 125, respectively. The common electrode 113 and the driving electrode 123 are used for presetting an electric field, which is used for changing the surface tension of the droplet 2 to be analyzed, so as to change the contact angle (i.e. the wetting angle) of the droplet 2 to be analyzed on the second hydrophobic layer 125, so that the droplet 2 to be analyzed can move in the accommodating space 10 a.
Referring to fig. 4, a plurality of driving electrodes 123 including a first driving electrode 123a and a second driving electrode 123b and the droplet 2 to be analyzed including a first sub-droplet 2a and a second sub-droplet 2b are illustrated. The first sub-droplet 2a is a portion of the droplet 2 to be analyzed facing the X-axis direction, and the second sub-droplet 2b is a portion of the droplet 2 to be analyzed facing the direction away from the X-axis direction. The first driving electrode 123a is adjacent to and spaced apart from the second driving electrode 123b, and the position of the first sub-droplet 2a corresponds to the position of the first driving electrode 123a, that is, the orthographic projection of the first sub-droplet 2a on the second hydrophobic layer 125 coincides with the orthographic projection of the first driving electrode 123a on the second hydrophobic layer 125. The position of the second sub-droplet 2b corresponds to the position of the second driving electrode 123b, i.e. the orthographic projection of the second sub-droplet 2b on the second hydrophobic layer 125 coincides with the orthographic projection of the second driving electrode 123b on the second hydrophobic layer 125. Wherein the X-axis direction is opposite to the direction away from the X-axis.
The first driving electrode 123a and the common electrode 113 form the preset electric field, the surface tension of the first sub-droplet 2a is reduced, the contact angle of the first sub-droplet 2a on the second hydrophobic layer 125 is increased, that is, the first sub-droplet 2a moves towards the X-axis direction, and the first sub-droplet 2a drives the second sub-droplet 2b to move towards the X-axis direction, so that the whole droplet 2 to be analyzed moves towards the X-axis direction. The second driving electrode 123b and the common electrode 113 form the preset electric field, the surface tension of the second sub-droplet 2b is reduced, the contact angle of the second sub-droplet 2b on the second hydrophobic layer 125 is increased, that is, the second sub-droplet 2b moves in the direction away from the X axis, and the second sub-droplet 2b drives the first sub-droplet 2a to also move in the direction away from the X axis, so that the whole droplet 2 to be analyzed moves in the direction away from the X axis.
In one embodiment, the contact angle of the droplet 2 to be analyzed on the first hydrophobic layer 111 is greater than 90 degrees, for example, 91 degrees, 100 degrees, 109 degrees, 120 degrees, 124 degrees, 140 degrees, 145 degrees, 155 degrees, or other values, which are not particularly limited by the present application. That is, the first hydrophobic layer 111 presents hydrophobicity to the droplet 2 to be analyzed, so that the contact area between the droplet 2 to be analyzed and the first hydrophobic layer 111 is reduced, and the droplet 2 to be analyzed is driven to move on the first hydrophobic layer 111.
In one embodiment, the contact angle of the droplet 2 to be analyzed on the second hydrophobic layer 125 is greater than 90 degrees, for example, 93 degrees, 107 degrees, 110 degrees, 116 degrees, 125 degrees, 130 degrees, 140 degrees, 153 degrees, or other values, which are not particularly limited by the present application. That is, the second hydrophobic layer 125 is hydrophobic to the droplet 2 to be analyzed, so that the contact area between the droplet 2 to be analyzed and the second hydrophobic layer 125 is reduced, which is beneficial to the movement of the droplet 2 to be analyzed and the maintenance of the shape of the droplet 2 to be analyzed.
Referring to fig. 1 and fig. 5, fig. 5 is a schematic circuit structure diagram of the driving circuit layer and the photosensitive assembly shown in fig. 1. The driving circuit layer 122 includes a plurality of driving transistors T1, a plurality of first conductive lines 1221, a plurality of second conductive lines 1222, a first insulating layer 1223, and a first passivation layer 1224. Each of the driving transistors T1 includes a gate T1a, a source T1b, a drain T1c, and a channel T1d. The first conductive lines 1221 and the gates T1a of the driving transistors T1 are disposed on the surface of the second substrate 121 facing the first substrate 110. The first insulating layer 1223 is disposed on a surface of the second substrate 121 facing the first substrate 110, and the first insulating layer 1223 covers the plurality of first conductive lines 1221 and the plurality of gates T1a. That is, the first insulating layer 1223 covers the surfaces of the first conductive lines 1221 and the gates T1a to the second substrate 121 facing the first substrate 110.
The source T1b, the drain T1c, the channel T1d, and the second conductive lines 1222 of the driving transistors T1 are disposed on a surface of the first insulating layer 1223 opposite to the second substrate 121. The first passivation layer 1224 is disposed on a surface of the first insulating layer 1223 opposite to the second substrate 121, and the first passivation layer 1224 covers the source electrodes T1b, the drain electrodes T1c, the channels T1d and the second conductive lines 1222 of the driving transistors T1. That is, the first passivation layer 1224 covers the source T1b, the drain T1c, the channel T1d, and the second conductive lines 1222 to the first insulating layer 1223 of the driving transistor T1. The second dielectric layer 124 covers the driving electrodes 123 to the surface of the first passivation layer 1224 facing away from the first insulating layer 1223.
In some embodiments, each of the first conductive lines 1221 extends in the X-axis direction, and the plurality of first conductive lines 1221 are sequentially spaced along the Y-axis direction. Each of the second conductive lines 1222 extends in the Y-axis direction, and a plurality of the second conductive lines 1222 are sequentially spaced apart along the X-axis direction.
In the embodiment of the present application, the position of one driving transistor T1 corresponds to the position of one driving electrode 123, that is, the orthographic projection of one driving transistor T1 in the Z-axis direction coincides with or partially coincides with the orthographic projection of one driving electrode 123 in the Z-axis direction, that is, the orthographic projection of one driving transistor T1 in the Z-axis direction coincides with at least partially the orthographic projection of one driving electrode 123 in the Z-axis direction. The channel T1d of each of the driving transistors T1 is connected to the source T1b and the drain T1c thereof, respectively, such that the channel T1d of each of the driving transistors T1 is electrically connected to the source T1b and the drain T1c thereof, respectively.
In some embodiments, the first passivation layer 1224 is provided with a first via penetrating through the first passivation layer 1224, where a position of one first via corresponds to a position of the drain T1c of one driving transistor T1. The first via exposes the drain T1c. A portion of the driving electrode 123 is disposed in the first via hole and connected to the drain electrode T1c, such that the driving electrode 123 is electrically connected to the drain electrode T1c. The gate T1a of the driving transistor T1 is electrically connected to the first conductive line 1221, and the source T1b of the driving transistor T1 is electrically connected to the second conductive line 1222. The signal transmitted by the first conductive line 1221 turns on the driving transistor T1, and the potential of the second conductive line 1222 is applied to the driving electrode 123, so that the driving electrode 123 and the common electrode 113 form the preset electric field.
In one embodiment, referring to fig. 1,2 and 5, a plurality of photosensitive elements 20 are disposed on the second substrate 120. Each photosensitive assembly 20 includes a control transistor 21 and a photosensitive element 22, and the microfluidic chip 1 further includes a plurality of first wires a and a plurality of second wires b. Each control transistor 21 includes a control terminal 211, an active layer 212, a first connection terminal 213, and a second connection terminal 214. The control ends 211 of the plurality of first wires a and the plurality of control transistors 21 are disposed on the surface of the second substrate 121 facing the first substrate 110, and the first insulating layer 1223 covers the control ends 211 of the plurality of first wires a and the plurality of control transistors 21. The active layers 212, the first connection ends 213, the second connection ends 214, and the second wires b of the plurality of control transistors 21 are disposed on the surface of the first insulating layer 1223 opposite to the second substrate 121, and the first passivation layer 1224 covers the active layers 212, the first connection ends 213, the second connection ends 214, and the second wires b of the plurality of control transistors 21. The control terminal 211 may be a gate of the control transistor 21, the first connection terminal 213 may be a source of the control transistor 21, and the second connection terminal 214 may be a drain of the control transistor 21.
In some embodiments, each of the first wires a extends in the X-axis direction, and the plurality of first wires a are sequentially spaced along the Y-axis direction. Each second wire b extends towards the Y-axis direction, and a plurality of second wires b are sequentially arranged at intervals along the X-axis direction. A plurality of photosensitive assemblies 20 in a row are arranged between two adjacent first wires a, and a plurality of photosensitive assemblies 20 in a column are arranged between two adjacent second wires b. Each photosensitive assembly 20 is electrically connected to one of the first wires a and one of the second wires b, respectively. The photosensitive elements 22 of the photosensitive assemblies 20 located in the same row are electrically connected to the same first trace a, and the photosensitive elements 22 of the photosensitive assemblies 20 in different rows are electrically connected to different first traces a. The photosensitive assemblies 20 located in the same column are electrically connected to the same second trace b, and the photosensitive assemblies 20 in different columns are electrically connected to different second traces b. The control terminals 211 of the control transistors 21 located in the same row are electrically connected to the same first conductive line 1221, and the control terminals 211 of the control transistors 21 in different rows are electrically connected to different first conductive lines 1221.
Referring to fig. 5, one of the first wires a, one of the second wires b, one of the first conductive wires 1221, and one of the second conductive wires 1222 enclose a functional area G, and a plurality of the functional areas G are arranged in an array. The functional area G is configured to house the photosensitive assembly 20 and the driving transistor T1.
In the embodiment of the present application, referring to fig. 1, the position of one photosensitive element 22 corresponds to the position of one driving electrode 123, that is, the front projection of one photosensitive element 22 in the Z-axis direction coincides with or partially coincides with the front projection of one driving electrode 123 in the Z-axis direction, that is, the front projection of one photosensitive element 22 in the Z-axis direction coincides with at least partially the front projection of one driving electrode 123 in the Z-axis direction. The active layer 212 of each control transistor 21 is connected to the first connection terminal 213 and the second connection terminal 214 thereof, respectively, such that the active layer 212 of each control transistor 21 is electrically connected to the first connection terminal 213 and the second connection terminal 214 thereof, respectively. The control terminal of the control transistor 21 is electrically connected to the first conductive line 1221, the first connection terminal 213 of the control transistor 21 is electrically connected to the photosensitive element 22, the second connection terminal 214 of the control transistor 21 is electrically connected to the second wires b, and each of the second wires b is electrically connected to the current detecting unit 30. The first insulating layer 1223 is provided with a second via hole, a part of the first trace a is exposed from the second via hole, and a part of the photosensitive element 22 is disposed in the second via hole and connected to the first trace a, so that the photosensitive element 22 is electrically connected to the first trace a, and each first trace a is electrically connected to the power supply. The control transistor 21 is configured to control on or off between the first connection terminal 213 and the second connection terminal 214. In the present application, the first connection terminal 213 and the second connection terminal 214 of the control transistors 21 of one row are simultaneously turned on or off.
The light is emitted to the photosensitive assembly 20 from a side of the first substrate 110 opposite to the second substrate 120, and the light sequentially passes through the first substrate 110 and the accommodating space 10a to be emitted to the photosensitive element 22 located in the second substrate 120. The signal transmitted by the first conductive line 1221 turns on the control transistor 21, the power supply supplies carriers to the photosensitive element 22 through the first trace a, and the induced current generated by the photosensitive element 22 is transmitted to the current detecting unit 30 through the second trace b.
It will be appreciated that the signal transmitted by the first conductive line 1221 may simultaneously turn on the driving transistor T1 and the control transistor 21, thereby avoiding that the driving transistor T1 and the control transistor 21 are connected to one conductive line respectively, and saving the number of conductive lines.
It should be noted that, the photosensitive element 22 generates an induced current according to the received light, and transmits the induced current to the current detecting unit 30, and the brightness of the light received by the photosensitive element 22 is proportional to the magnitude of the generated induced current. The greater the brightness of the light received by the photosensitive element 22, the greater the induced current generated by the light, and the photosensitive element 22 can be considered as a photoresistor, the greater the brightness of the light received by the photosensitive element 22, the smaller the resistance, and thus the greater the current passing through the photosensitive element 22.
In some embodiments, the light may be white light, or may be the light with the maximum wavelength that the photosensitive element 22 can absorb according to the characteristics of the photosensitive element 22.
The gate T1a, the source T1b and the drain T1c of the driving transistor T1, the control terminal 211, the first connection terminal 213 and the second connection terminal 214 of the control transistor 21, the first conductive line 1221, the second conductive line 1222, the first trace a and the second trace b may all be made of copper (Cu), aluminum (Al) or molybdenum (Mo). The material of the channel T1d, the photosensitive element 22, and the active layer 212 of the control transistor 21 may be amorphous silicon (a-Si). The material of the photosensitive element 22 may be at least one of monocrystalline silicon, polycrystalline silicon, gallium arsenide, copper indium selenium, and the like. The material of the driving electrode 123 and the common electrode 113 may be Indium Tin Oxide (ITO). The materials of the first dielectric layer 112, the second dielectric layer 124, the first insulating layer 1223, and the first passivation layer 1224 may be silicon oxide (SiO) or silicon nitride (SiN), etc.
In the present application, referring to fig. 2, the current detecting unit 30 includes a plurality of detecting sub-units 31, and each of the detecting sub-units 31 is electrically connected to one of the second wires b. I.e. one of said detection sub-units 31 is electrically connected to a plurality of said second connections 214 of a plurality of said control transistors 21 of a column. The detecting subunit 31 is configured to receive the induced current transmitted by the photosensitive assembly 20, and determine whether the induced current changes to determine the position of the droplet 2 to be analyzed.
It will be appreciated that the signals transmitted by the plurality of first conductive lines 1221 cause the control transistors 21 of a plurality of rows to be turned on row by row. That is, the turn-on sequence of the control transistors 21 of the plurality of rows is: the plurality of control transistors 21 of the first row are turned on and then off, then the plurality of control transistors 21 of the second row are turned on and then off, then the plurality of control transistors 21 of the third row are turned on and then off, and so on, … …. If the detection subunit 31 electrically connected to the photosensitive elements 20 of the second column detects the change of the induced current when the control transistors 21 of the first row are turned on, the position of the droplet 2 to be analyzed corresponds to the position of the photosensitive elements 20 of the second column of the first row, so that the change of the induced current of any one of the photosensitive elements 20 is detected, and the position of the droplet 2 to be analyzed is detected.
In some embodiments, the photosensitive element 22 may be electrically connected to the driving electrode 123, and the potential of the photosensitive element 22 may be applied to the driving electrode 123 to form an electric field other than the preset electric field, so that the intensity of the preset electric field for driving the droplet 2 to be analyzed may be reduced, so that the potential of the second conductive line 1222 may be reduced, which is beneficial for saving electric energy.
Referring to fig. 6 to 8, fig. 6 is a schematic layer structure of a microfluidic chip according to a second embodiment of the present application, fig. 7 is a schematic circuit connection diagram of the photosensitive assembly shown in fig. 6, and fig. 8 is a schematic circuit structure diagram of the driving circuit layer and the photosensitive assembly shown in fig. 6. The microfluidic chip of the second embodiment differs from the microfluidic chip of the first embodiment in that: the photosensitive assembly 20 of the microfluidic chip of the second embodiment does not include the control transistor 21. For a description of the same points of the microfluidic chip of the second embodiment as those of the microfluidic chip of the first embodiment, please refer to the related description of the microfluidic chip of the first embodiment, and the description is omitted herein.
Specifically, the microfluidic chip 1 further includes a plurality of first wires a, a plurality of second wires b, and a plurality of third wires c. The first wires a and the third wires c are disposed on the surface of the second substrate 121 facing the first insulating layer 1223, and the first passivation layer 1224 covers the first wires a and the third wires c. The photosensitive elements 22 of the photosensitive assemblies 20 and the second traces b are disposed on the surface of the first insulating layer 1223 opposite to the second substrate 121, and the first passivation layer 1224 covers the photosensitive elements 22 and the second traces b. The first insulating layer 1223 is provided with a plurality of first openings and a plurality of second openings penetrating the first insulating layer 1223. The position of one of the first openings corresponds to the position of one of the photosensitive elements 22, and the position of one of the second openings corresponds to the position of one of the photosensitive elements 22. Part of the first wire a exposes the first opening, and part of the third wire c exposes the second opening. The photosensitive element 22 is disposed in the first opening and the second opening, and the photosensitive element 22 is respectively connected to the first trace a, the second trace b, and the third trace c, so that the photosensitive element 22 is respectively electrically connected to the first trace a, the second trace b, and the third trace c.
In the present application, each third trace c extends along the X-axis direction, and the plurality of third traces c are sequentially arranged at intervals along the Y-axis direction.
The current detecting unit 30 includes a plurality of first detecting sub-units 32 and a plurality of second detecting sub-units 33, and each of the first detecting sub-units 32 is electrically connected to one of the second wires b, so that each of the first detecting sub-units 32 is electrically connected to a plurality of the photosensitive elements 22 in a column. Each of the second detecting sub-units 33 is electrically connected to one of the third wirings c, so that each of the second detecting sub-units 33 is electrically connected to a plurality of the photosensitive elements 22 of one row. The photosensitive element 22 is configured to generate an induced current according to the received light, and transmit the induced current to the first detection subunit 32 and the second detection subunit 33. The first detecting subunit 32 is configured to receive the induced current transmitted by the photosensitive element 22, and determine a first coordinate point of the photosensitive element 22 according to the change of the induced current, the second detecting subunit 33 is configured to receive the induced current transmitted by the photosensitive element 22, and determine a second coordinate point of the photosensitive element 22 according to the change of the induced current, where the first coordinate point and the second coordinate point are used to determine a position of the photosensitive element 22 where the induced current changes, and further determine a position of the droplet 2 to be analyzed.
Referring to fig. 9, fig. 9 is a schematic layer structure of a microfluidic chip according to a third embodiment of the present application. The microfluidic chip of the first embodiment and the microfluidic chip of the second embodiment of the third embodiment are different in that: the microfluidic chip of the third embodiment further includes a plurality of refractive elements 50, where a plurality of the refractive elements 50 are disposed on a surface of the first substrate 110 opposite to the second substrate 120, and a position of the refractive element 50 corresponds to a position of the driving transistor T1, that is, an orthographic projection of the refractive element 50 in the Z-axis direction coincides with or partially coincides with an orthographic projection of the driving transistor in the Z-axis direction. The position of the refractive element 50 is offset from the position of the photosensitive element 22 in the Z-axis direction. The light is directed to the photosensitive assembly 20 from the side of the first substrate 110 opposite to the second substrate 120, and the refraction element 50 is used for refracting the light directed to itself to the photosensitive element 22.
It can be appreciated that, by the refraction element 50 being configured to refract the light emitted to itself to the photosensitive element 22, an increase in leakage current of the driving transistor T1 caused by the light being emitted to the driving transistor T1 can be avoided. Furthermore, the refraction of the light to the photosensitive element 22 can also increase the utilization of the light.
Referring to fig. 10, fig. 10 is a schematic layer structure of a microfluidic chip according to a fourth embodiment of the present application. Microfluidic chip of the fourth embodiment the microfluidic chip of the first embodiment differs in that: the photosensitive assembly 20 is disposed on the first substrate 110. For a description of the same points of the microfluidic chip of the fourth embodiment as those of the microfluidic chip of the first embodiment, please refer to the related description of the microfluidic chip of the first embodiment, and the description is omitted herein.
Specifically, the first substrate 110 includes a first hydrophobic layer 111, a first dielectric layer 112, a common electrode 113, a second passivation layer 116, a second insulating layer 115, and a first base 114, which are sequentially stacked on one side of the second substrate 120. The control ends 211 of the first wires a and the control transistors 21 are disposed on the surface of the first substrate 114 facing the second substrate 120, and the second insulating layer 115 covers the control ends 211 of the first wires a and the control transistors 21. The active layers 212, the first connection terminals 213, the second connection terminals 214, and the second wires b of the plurality of control transistors 21 are disposed on the surface of the second insulating layer 115 opposite to the first substrate 114, and the second passivation layer 116 covers the active layers 212, the first connection terminals 213, the second connection terminals 214, and the second wires b of the plurality of control transistors 21.
In the present application, the position of the driving transistor T1 is offset from the position of the photosensitive member 20 in the Z-axis direction. The light is emitted to the photosensitive assembly 20 from a side of the second substrate 120 opposite to the first substrate 110, and the light sequentially passes through the second substrate 120 and the accommodating space 10a to be emitted to the photosensitive element 22 located in the first substrate 110.
It can be appreciated that by disposing the photosensitive element 20 on the first substrate 110 and directing light from the side of the second substrate 120 opposite to the first substrate 110 toward the photosensitive element 20, an increase in leakage current of the driving transistor T1 caused by the light striking the channel of the driving transistor T1 can be avoided.
In some embodiments, the materials of the second insulating layer 115 and the second passivation layer 116 may be silicon oxide (SiO) or silicon nitride (SiN), etc.
Referring to fig. 11, fig. 11 is a schematic layer structure of a microfluidic chip according to a fifth embodiment of the present application. The microfluidic chip of the fifth embodiment differs from the microfluidic chip of the second embodiment in that: the photosensitive assembly 20 is disposed on the first substrate 110. For a description of the same points of the microfluidic chip of the fifth embodiment as those of the microfluidic chip of the second embodiment, please refer to the related description of the microfluidic chip of the second embodiment, and the description is omitted herein.
Specifically, the first substrate 110 includes a first hydrophobic layer 111, a first dielectric layer 112, a common electrode 113, a second passivation layer 116, a second insulating layer 115, and a first base 114, which are sequentially stacked on one side of the second substrate 120. The first wires a and the third wires c are disposed on the surface of the first substrate 114 facing the second insulating layer 115, and the second passivation layer 116 covers the first wires a and the third wires c. The photosensitive elements 22 of the photosensitive assemblies 20 and the second traces b are disposed on the surface of the second insulating layer 115 opposite to the first substrate 114, and the second passivation layer 116 covers the photosensitive elements 22 and the second traces b. The photosensitive element 22 is respectively connected with the first trace a, the second trace b and the third trace c, so that the photosensitive element 22 is respectively electrically connected with the first trace a, the second trace b and the third trace c.
In the present application, the position of the driving transistor T1 is offset from the position of the photosensitive member 20 in the Z-axis direction. The light is emitted to the photosensitive assembly 20 from a side of the second substrate 120 opposite to the first substrate 110, and the light sequentially passes through the second substrate 120 and the accommodating space 10a to be emitted to the photosensitive element 22 located in the first substrate 110.
It can be appreciated that by disposing the photosensitive element 20 on the first substrate 110 and directing light from the side of the second substrate 120 opposite to the first substrate 110 toward the photosensitive element 20, an increase in leakage current of the driving transistor T1 caused by the light striking the channel of the driving transistor T1 can be avoided.
Referring to fig. 12, fig. 12 is a schematic distribution diagram of photosensitive components of a microfluidic chip according to a sixth embodiment of the present application. The microfluidic chip of the sixth embodiment differs from the microfluidic chips of the first, second, third, fourth and fifth embodiments in that: the areas of the light receiving elements 22 of the microfluidic chip of the sixth embodiment are different from each other. For a description of the same points of the microfluidic chip of the sixth embodiment as those of the first, second, third, fourth and fifth embodiments, please refer to the related descriptions of the microfluidic chip of the first, second, third, fourth and fifth embodiments, and the detailed descriptions thereof are omitted herein.
Specifically, the areas of the photosensitive elements 22 that receive the light are different, so that the intensities of the illumination (simply referred to as illuminance) received by the photosensitive elements 22 are different, and the induced currents generated by the photosensitive elements 22 are also different. The induced currents generated by the plurality of photosensitive elements 22 form (e.g., sum up) a total induced current, which is transmitted to the current detection unit 30, and the current detection unit 30 determines the position of the photosensitive element 22, and thus the position of the droplet 2 to be analyzed, according to the amount of change in the total induced current.
The light receiving areas of the plurality of photosensitive elements 22 in any one column may be arranged in order from small to large, and the light receiving areas of the plurality of photosensitive elements 22 in any one row may be arranged in order from small to large. The area of the photosensitive element 22 that receives light is proportional to the induced current generated by the photosensitive element 22 under the same light brightness. That is, the larger the area of the photosensitive element 22 receiving light is, the larger the induced current generated by the photosensitive element 22 is, and the smaller the area of the photosensitive element 22 receiving light is, the smaller the induced current generated by the photosensitive element is.
It is understood that the magnitude of the induced current generated by the plurality of photosensitive elements 22 is different, and the current detecting unit 30 determines the position of the photosensitive element 22 by the amount of change in the total induced current. For example, the amount of change in the induced current when the position of the droplet 2 to be analyzed is between the corresponding and non-corresponding position of the first photosensitive element 22a is 0.1mA, and the amount of change in the induced current when the position of the droplet 2 to be analyzed is between the corresponding and non-corresponding position of the second photosensitive element 22b is 0.2mA. When the current detecting unit 30 detects that the variation of the total induced current is 0.1mA, it can be determined that the position of the droplet 2 to be analyzed corresponds to the position of the first photosensitive element 22a, and when the current detecting unit 30 detects that the variation of the total induced current is 0.2mA, it can be determined that the position of the droplet 2 to be analyzed corresponds to the position of the second photosensitive element 22 b. The current detection unit 30 directly receives the summed total induced current, the current detection unit 30 does not need to include a plurality of detection subunits 31 or a plurality of first detection subunits 32 and a plurality of second detection subunits 33, and the photosensitive assembly 20 does not need to include the control transistor 21, thereby saving cost.
Referring to fig. 13, fig. 13 is a schematic distribution diagram of photosensitive components of a microfluidic chip according to a seventh embodiment of the present application. The microfluidic chip of the seventh embodiment differs from the microfluidic chip of the sixth embodiment in that: the areas of the light receiving elements 22 of the microfluidic chip of the seventh embodiment that receive light are the same, and the doping amounts of the light receiving elements 22 of the microfluidic chip of the seventh embodiment are different. For a description of the same points of the microfluidic chip of the seventh embodiment as those of the microfluidic chip of the sixth embodiment, please refer to the related description of the microfluidic chip of the sixth embodiment, which is not repeated herein.
Specifically, the areas of the photosensitive elements 22 that receive light are the same, and the doping amounts of the photosensitive elements 22 are different, so that the currents generated by the photosensitive elements 22 are different when the photosensitive elements 22 receive the same illumination intensity.
The doping amounts of the plurality of photosensitive elements 22 in any one column may be arranged in order from small to large, and the doping amounts of the plurality of photosensitive elements 22 in any one row may be arranged in order from small to large. The magnitude of the doping amount of the photosensitive element 22 is proportional to the magnitude of the induced current generated by the photosensitive element 22, that is, the larger the doping amount of the photosensitive element 22 is, the larger the induced current generated by the photosensitive element 22 is, and the smaller the doping amount of the photosensitive element 22 is, the smaller the induced current generated by the photosensitive element is.
It is understood that the induced currents generated by the plurality of photosensitive elements 22 are different, and the current detecting unit 30 can determine the position of the photosensitive element 22 by the amount of change according to the total induced current. Thus, the current detecting unit 30 does not need to include a plurality of the detecting sub-units 31 or a plurality of the first detecting sub-units 32 and a plurality of the second detecting sub-units 33, and the photosensitive assembly 20 does not need to include the control transistor 21, thereby saving cost.
It should be noted that, the brightness of the light received by the photosensitive element 22 is directly proportional to the magnitude of the induced current generated by the photosensitive element 22, the magnitude of the area of the light received by the photosensitive element 22 is directly proportional to the magnitude of the induced current generated by the photosensitive element 22, and the magnitude of the doping amount of the photosensitive element 22 is directly proportional to the magnitude of the induced current generated by the photosensitive element 22, which are all obtained by adopting single factor control variables. For example, the brightness of the light received by the photosensitive element 22 is proportional to the magnitude of the induced current generated by the photosensitive element 22, and only the factor that changes the brightness of the light received by the photosensitive element 22 is the factor that can affect the induced current generated by the photosensitive element 22. The area of the photosensitive element 22 that receives light is proportional to the magnitude of the induced current generated by the photosensitive element 22, and only the factor that changes the area of the light received by the photosensitive element 22 is the other factors that can affect the induced current generated by the photosensitive element 22 remain unchanged. The doping amount of the photosensitive element 22 is proportional to the magnitude of the induced current generated by the photosensitive element 22, and only the factor of changing the doping amount of the photosensitive element 22 is the factor of changing the doping amount of the photosensitive element 22, and other factors that can affect the induced current generated by the photosensitive element 22 remain unchanged.
In summary, the microfluidic chip 1 provided in the embodiment of the application includes a microfluidic component 10, a plurality of photosensitive components 20, and a current detection unit 30. The microfluidic component 10 is provided with a containing space 10a for containing the liquid drop 2 to be analyzed, and the microfluidic component 10 is used for driving the liquid drop 2 to be analyzed to move in the containing space 10 a. The photosensitive assemblies 20 are arranged in a single layer on a plane formed by the X-axis direction and the Y-axis direction, and the photosensitive assemblies 20 are arranged in the microfluidic assembly 10. The photosensitive assemblies 20 are disposed at intervals from the accommodating space 10a in the Z-axis direction. Each photosensitive assembly 20 is electrically connected to a power source and the current detecting unit 30. The droplet to be analyzed 2 is used for reducing the brightness of the light transmitted through the droplet to be analyzed 2, so that the brightness received by the photosensitive assembly 20 corresponding to the position of the droplet to be analyzed 2 is reduced. The photosensitive assembly 20 is configured to generate an induced current according to the received light and transmit the current to the current detection unit, and the brightness of the light received by the photosensitive assembly 20 is proportional to the magnitude of the induced current generated by the light. The current detection unit 30 is configured to detect a change of the induced current to determine a position of the photosensitive component 20 with the change of the induced current, and further determine a position of the droplet 2 to be analyzed, so as to implement real-time detection of the position of the droplet 2 to be analyzed by the microfluidic chip.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
It is to be understood that the application is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims. Those skilled in the art will recognize that the full or partial flow of the embodiments described above can be practiced and equivalent variations of the embodiments of the present application are within the scope of the appended claims.

Claims (10)

1. A microfluidic chip comprising a microfluidic component provided with a receiving space for receiving a droplet to be analyzed, the microfluidic component being for driving the droplet to be analyzed to move within the receiving space, the microfluidic chip further comprising:
The plurality of photosensitive assemblies are arranged in a single layer on a plane formed by a first direction and a second direction, the plurality of photosensitive assemblies are arranged in the microfluidic assembly, and the plurality of photosensitive assemblies are arranged at intervals with the accommodating space along a third direction, wherein the first direction, the second direction and the third direction are mutually perpendicular to each other;
the current detection units are respectively and electrically connected with a power supply and the current detection units, and the power supply is used for providing carriers for the photosensitive assemblies;
The liquid drop to be analyzed is used for reducing the brightness of light transmitted through the liquid drop to be analyzed, so that the brightness received by the photosensitive assembly, the position of which corresponds to the liquid drop to be analyzed, is reduced, the photosensitive assembly is used for generating induced current according to the received light, and transmitting the induced current to the current detection unit, the brightness of the light received by the photosensitive assembly is in direct proportion to the generated induced current, and the current detection unit is used for detecting the change of the induced current so as to determine the position of the liquid drop to be analyzed.
2. The microfluidic chip according to claim 1, wherein a plurality of the photosensitive elements are distributed in a plurality of rows and a plurality of columns, each of the photosensitive elements comprises a control transistor and a photosensitive element, the control transistor comprises a control end, a first connection end and a second connection end, each of the photosensitive elements is electrically connected with the power supply and the first connection end of one of the control transistors, the control transistor is used for controlling the connection or disconnection between the first connection end and the second connection end, and the first connection end and the second connection end of one row of the plurality of control transistors are simultaneously connected or disconnected;
the current detection unit comprises a plurality of detection subunits, and each detection subunit is electrically connected with a plurality of second connection terminals of the control transistors in a column;
The light sensing element is used for generating induced current according to received light rays and transmitting the induced current to the detection subunit, the brightness of the light rays received by the light sensing element is in direct proportion to the generated induced current, and the detection subunit is used for detecting the change of the induced current to determine the position of the liquid drop to be analyzed.
3. The microfluidic chip according to claim 1, wherein a plurality of said photosensitive assemblies are arranged in a plurality of rows and columns, each of said photosensitive assemblies comprising a photosensitive element, each of said photosensitive elements being electrically connected to said power supply;
the current detection unit comprises a plurality of first detection subunits and a plurality of second detection subunits, wherein each first detection subunit is electrically connected with a plurality of photosensitive elements in a row, and each second detection subunit is electrically connected with a plurality of photosensitive elements in a row;
The light sensing device comprises a first detection subunit, a second detection subunit and a photosensitive element, wherein the photosensitive element is used for generating induced current according to received light and transmitting the induced current to the first detection subunit and the second detection subunit, the brightness of the light received by the photosensitive element is in direct proportion to the generated induced current, the first detection subunit is used for determining a first coordinate point of the photosensitive element according to the change of the induced current, the second detection subunit is used for determining a second coordinate point of the photosensitive element according to the change of the induced current, and the first coordinate point and the second coordinate point are used for determining the position of a liquid drop to be analyzed.
4. The microfluidic chip according to claim 1, wherein each of the photosensitive assemblies comprises a photosensitive element, areas of the photosensitive elements receiving light are different from each other, and the photosensitive elements are electrically connected with the current detection unit;
The light sensing elements are used for generating induced currents according to received light, the size of the area of each light sensing element for receiving the light is in direct proportion to the size of the induced current generated by the light sensing elements, the induced currents generated by the light sensing elements form total induced currents, the total induced currents are transmitted to the current detection unit, and the current detection unit determines the positions of the liquid drops to be analyzed according to the change of the total induced currents.
5. The microfluidic chip according to claim 1, wherein each of the photosensitive assemblies comprises a photosensitive element, doping amounts of a plurality of the photosensitive elements are different, and the photosensitive elements are electrically connected with the current detection unit;
The light sensing elements are used for generating induced currents according to received light rays, the doping amount of each light sensing element is in direct proportion to the induced currents generated by the light sensing elements, the induced currents generated by the light sensing elements form total induced currents, the total induced currents are transmitted to the current detection unit, and the current detection unit determines the positions of the liquid drops to be analyzed according to the change amount of the total induced currents.
6. The microfluidic chip according to any one of claims 2 to 5, wherein the material of the photosensitive element comprises at least one of monocrystalline silicon, polycrystalline silicon, amorphous silicon, gallium arsenide, and copper indium selenium material.
7. The microfluidic chip according to any one of claims 1 to 5, wherein the microfluidic component comprises a first substrate and a second substrate, the first substrate comprising a first hydrophobic layer, a first dielectric layer, a common electrode and a first base stacked on one side of the second substrate, the first dielectric layer insulating the first hydrophobic layer and the common electrode.
8. The microfluidic chip according to claim 7, wherein the second substrate comprises a second base, a driving circuit layer, a plurality of driving electrodes, a second dielectric layer and a second hydrophobic layer, the second base and the first substrate are opposite to each other along the third direction and are arranged at intervals, the driving circuit layer is arranged on the surface of the second base facing the first substrate, the second dielectric layer covers the surfaces of the driving electrodes, facing away from the second base, of the driving circuit layer, the second hydrophobic layer is arranged on the surface of the second dielectric layer, facing away from the driving circuit layer, the second dielectric layer insulates the driving electrodes from the second hydrophobic layer, and the second hydrophobic layer and the first hydrophobic layer enclose the accommodating space;
The driving circuit layer comprises a plurality of driving transistors, the position of one driving transistor corresponds to the position of one driving electrode in the third direction, the position of the driving transistor is staggered with the position of the photosensitive assembly in the third direction, and the driving transistor is electrically connected with the driving electrode corresponding to the position.
9. The microfluidic chip according to claim 8, wherein the photosensitive member is disposed inside the first substrate, and light is directed to the photosensitive member from a side of the second substrate facing away from the first substrate.
10. The microfluidic chip according to claim 8, wherein the photosensitive member is disposed inside the second substrate, and light is directed to the photosensitive member from a side of the first substrate facing away from the second substrate;
The microfluidic chip further comprises a plurality of refraction elements, the refraction elements are arranged on one side, opposite to the second substrate, of the first substrate, the positions of the refraction elements in the third direction correspond to the positions of the driving transistors, and the refraction elements are used for refracting light emitted to the microfluidic chip to the photosensitive assembly.
CN202410874605.7A 2024-07-02 2024-07-02 Microfluidic chip Active CN118416977B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410874605.7A CN118416977B (en) 2024-07-02 2024-07-02 Microfluidic chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202410874605.7A CN118416977B (en) 2024-07-02 2024-07-02 Microfluidic chip

Publications (2)

Publication Number Publication Date
CN118416977A true CN118416977A (en) 2024-08-02
CN118416977B CN118416977B (en) 2024-10-01

Family

ID=92326574

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202410874605.7A Active CN118416977B (en) 2024-07-02 2024-07-02 Microfluidic chip

Country Status (1)

Country Link
CN (1) CN118416977B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004271702A (en) * 2003-03-06 2004-09-30 Seiko Epson Corp Optical part and its manufacturing method, micro lens substrate, display device, imaging device, optical element, and optical module
US20080273205A1 (en) * 2007-05-04 2008-11-06 Samsung Electronics Co., Ltd. Optical detection apparatus and method using phase sensitive detection method for disk-type microfluidic device
CN107607475A (en) * 2017-09-06 2018-01-19 京东方科技集团股份有限公司 Micro-total analysis system and method
CN112086526A (en) * 2020-09-01 2020-12-15 深圳市华星光电半导体显示技术有限公司 Display panel and display device
CN220460715U (en) * 2023-07-26 2024-02-09 重庆惠科金渝光电科技有限公司 Microfluidic chip

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004271702A (en) * 2003-03-06 2004-09-30 Seiko Epson Corp Optical part and its manufacturing method, micro lens substrate, display device, imaging device, optical element, and optical module
US20080273205A1 (en) * 2007-05-04 2008-11-06 Samsung Electronics Co., Ltd. Optical detection apparatus and method using phase sensitive detection method for disk-type microfluidic device
CN107607475A (en) * 2017-09-06 2018-01-19 京东方科技集团股份有限公司 Micro-total analysis system and method
CN112086526A (en) * 2020-09-01 2020-12-15 深圳市华星光电半导体显示技术有限公司 Display panel and display device
CN220460715U (en) * 2023-07-26 2024-02-09 重庆惠科金渝光电科技有限公司 Microfluidic chip

Also Published As

Publication number Publication date
CN118416977B (en) 2024-10-01

Similar Documents

Publication Publication Date Title
CN109174219B (en) Microfluidic substrate, driving method thereof and microfluidic device
EP1887629B1 (en) Display device and manufacturing method thereof
KR20180032715A (en) Display apparatus
CN111309171B (en) Touch panel and touch display device
CN111415955A (en) Display device and method for manufacturing the same
KR101409286B1 (en) display device
JP7254035B2 (en) Digital microfluidic device, microfluidic device, lab-on-chip device, digital microfluidic method, and method of manufacturing digital microfluidic device
US20080012474A1 (en) Display device
CN102200635A (en) Display apparatus
US20240293813A1 (en) Micro-Fluidic Substrate, Micro-Fluidic Structure and Driving Method Thereof
KR20210044430A (en) Method for manufacturing display apparatus, interposer substrate and computer program stored in a recording medium
CN112934280A (en) Microfluidic device and detection method thereof
CN112947794A (en) Touch display panel and display device
CN118416977B (en) Microfluidic chip
EP1975914B1 (en) Film-chip complex, method of manufacturing film-chip complex and display device having the same
US20240278236A1 (en) Microfluidic Chip Having Grounding Trace and Manufacturing Method Thereof, and Microfluidic Device
US11450708B2 (en) Metal-oxide semiconductor module and light-emitting diode display device including the same
CN114667504A (en) Display substrate, preparation method thereof and display device
WO2022227299A1 (en) Microfluidic chip
CN100461984C (en) Circuit assembling structure
CN115722282B (en) Microfluidic substrate, microfluidic device and driving method thereof
CN113497208A (en) Display panel and display device including the same
US20220276324A1 (en) Electronic device
US20220403306A1 (en) Substrate, microfluidic device, driving method and manufacturing method
CN116665551A (en) Electronic device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant