CN118198117A - Method for inhibiting IGCT turn-off tailing oscillation, crimping type IGCT and application - Google Patents
Method for inhibiting IGCT turn-off tailing oscillation, crimping type IGCT and application Download PDFInfo
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- 230000010355 oscillation Effects 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000002788 crimping Methods 0.000 title claims abstract description 13
- 230000002401 inhibitory effect Effects 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- 239000000696 magnetic material Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
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- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910000889 permalloy Inorganic materials 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 238000004806 packaging method and process Methods 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 230000001629 suppression Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 2
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
Description
技术领域Technical Field
本发明涉及电力电子技术领域，具体涉及一种抑制IGCT关断拖尾振荡的方法、压接型IGCT及应用，用于IGCT器件的开关特性优化。The present invention relates to the technical field of power electronics, and in particular to a method for suppressing IGCT turn-off tail oscillation, a crimped IGCT and an application thereof, which are used for optimizing the switching characteristics of IGCT devices.
背景技术Background technique
IGCT(Integrated Gate Commutated Thyristor)是一种晶闸管，结合了GTO(门极可关断)晶闸管和MOSFET(金属氧化物半导体场效应晶体管)的特性，集成了这两种器件的优点，可提高高功率应用的整体效率和性能。IGCT将封装好的整晶圆门极换流晶闸管与门极驱动回路采用互联设计集成在印制电路板上，其电压电流容量和可靠性高、通态压降和生产成本低，在电网及变速驱动等应用领域具备显著优势。IGCT (Integrated Gate Commutated Thyristor) is a thyristor that combines the characteristics of GTO (gate turn-off) thyristor and MOSFET (metal oxide semiconductor field effect transistor), integrating the advantages of these two devices to improve the overall efficiency and performance of high-power applications. IGCT integrates the packaged whole-wafer gate commutated thyristor and gate drive circuit on the printed circuit board using an interconnection design. It has high voltage and current capacity and reliability, low on-state voltage drop and production cost, and has significant advantages in application fields such as power grids and variable speed drives.
在进行IGCT特定的工况的开关特性测试时，IGCT的拖尾振荡会引起电压、电流急剧振荡，IGCT典型的拖尾振荡测试波形如图1所示(振荡部分使用实心方框标出)，该高频振荡的传导和辐射电磁干扰，对于控制系统以及电磁环境也具有重要的影响，抑制IGCT的拖尾振荡对于系统的安全可靠运行至关重要。When testing the switching characteristics of IGCT under specific working conditions, the tail oscillation of IGCT will cause sharp oscillations in voltage and current. The typical tail oscillation test waveform of IGCT is shown in Figure 1 (the oscillation part is marked with a solid box). The conducted and radiated electromagnetic interference of this high-frequency oscillation also has an important impact on the control system and the electromagnetic environment. Suppressing the tail oscillation of IGCT is crucial for the safe and reliable operation of the system.
但是，经过技术检索发现，针对IGCT的关断拖尾振荡，目前现有技术中并未给出有效抑制方案，因此亟需开发相关技术解决这一难题。However, after technical search, it was found that there is no effective suppression solution for the turn-off tail oscillation of IGCT in the existing technology, so it is urgent to develop relevant technologies to solve this problem.
发明内容Summary of the invention
有鉴于此，本发明的主要目的在于提供一种抑制IGCT关断拖尾振荡的方法、压接型IGCT及应用，以期至少部分地解决上述技术问题。In view of this, the main purpose of the present invention is to provide a method for suppressing IGCT turn-off tail oscillation, a crimped IGCT and applications, in order to at least partially solve the above technical problems.
为了实现上述目的，作为本发明的第一个方面，提出了一种抑制IGCT关断拖尾振荡的方法，包括以下步骤：In order to achieve the above object, as a first aspect of the present invention, a method for suppressing IGCT turn-off tail oscillation is proposed, comprising the following steps:
将所述IGCT的阴极金属连接片替换成带有凸台结构的阴极金属连接片，或者在所述IGCT的阴极金属连接片上形成凸台结构；Replacing the cathode metal connecting piece of the IGCT with a cathode metal connecting piece with a boss structure, or forming a boss structure on the cathode metal connecting piece of the IGCT;
在所述凸台位置嵌入软磁磁环。A soft magnetic ring is embedded at the boss position.
作为本发明的第二个方面，还提出了一种压接型IGCT，所述压接型IGCT的阴极金属连接片上带有凸台结构，并嵌入了软磁磁环。As a second aspect of the present invention, a crimping type IGCT is also proposed, wherein the cathode metal connecting piece of the crimping type IGCT has a boss structure and is embedded with a soft magnetic ring.
作为本发明的第三个方面，还提出了一种采用如上所述的压接型IGCT的功率器件、电子装置或系统；其中，所述功率器件优选为半导体开关器件；所述电子装置或系统优选为变流器、静态无功补偿器(SVC)、中高压电机驱动器或高压输电系统。As a third aspect of the present invention, a power device, electronic device or system using the crimped IGCT as described above is also proposed; wherein the power device is preferably a semiconductor switching device; the electronic device or system is preferably a converter, a static VAR compensator (SVC), a medium or high voltage motor drive or a high voltage transmission system.
基于上述技术方案可知，本发明的抑制IGCT器件关断拖尾振荡的方法、压接型IGCT及应用相对于现有技术至少具备如下有益效果之一：Based on the above technical solutions, it can be seen that the method for suppressing the tail oscillation of the IGCT device when it is turned off, the crimped IGCT and the application of the present invention have at least one of the following beneficial effects compared with the prior art:
1、有效抑制了整晶圆封装的压接IGCT器件关断拖尾电流振荡，提高了器件应用系统的可靠性。1. Effectively suppress the turn-off tail current oscillation of the whole wafer packaged press-fit IGCT device, and improve the reliability of the device application system.
2、在现有的压接IGCT器件封装形式上改进完成，装配简单。2. Improvement is made on the existing crimped IGCT device packaging form, and assembly is simple.
3、所用的软磁材料只在小电流情况下作用，大电流时达到饱和磁场强度，等效电感为零，不影响器件正常工作时的电气参数。3. The soft magnetic material used only works under low current conditions. When the current is large, the saturated magnetic field strength is reached and the equivalent inductance is zero, which does not affect the electrical parameters of the device during normal operation.
4、所用的软磁磁环可以根据实际需求，调整为一层或多层，灵活便捷。4. The soft magnetic ring used can be adjusted to one or more layers according to actual needs, which is flexible and convenient.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
下面结合附图和实施例对本发明的方法和装置作进一步说明：The method and device of the present invention are further described below in conjunction with the accompanying drawings and embodiments:
图1是现有技术的IGCT器件的拖尾振荡波形示意图；FIG1 is a schematic diagram of a tailing oscillation waveform of an IGCT device in the prior art;
图2是现有技术的IGCT器件的压接封装结构的示意图；FIG2 is a schematic diagram of a compression packaging structure of an IGCT device in the prior art;
图3是本发明的用于抑制器件关断拖尾振荡的IGCT器件压接封装结构的示意图；3 is a schematic diagram of a compression packaging structure of an IGCT device for suppressing tail oscillation when the device is turned off according to the present invention;
图4是本发明的IGCT芯片结构的俯视图；FIG4 is a top view of the IGCT chip structure of the present invention;
图5是本发明的一种实施方式的软磁磁环的结构示意图；FIG5 is a schematic structural diagram of a soft magnetic ring according to an embodiment of the present invention;
图6是本发明的另一种实施方式的软磁磁环的结构示意图。FIG. 6 is a schematic structural diagram of a soft magnetic ring according to another embodiment of the present invention.
具体实施方式Detailed ways
为使本发明的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本发明作进一步的详细说明。In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
在本发明中，部分缩略语和关键术语的定义如下：In the present invention, some abbreviations and key terms are defined as follows:
GCT：Gate-Commutated Thyristor的缩写，门极换流晶闸管；GCT: abbreviation of Gate-Commutated Thyristor, gate-commutated thyristor;
IGCT：Integrated Gate-Commutated Thyristor的缩写，集成门极换流晶闸管；IGCT: abbreviation of Integrated Gate-Commutated Thyristor, integrated gate-commutated thyristor;
IGBT：Insulated Gate Bipolar Transistor的缩写，绝缘栅双极型晶体管；IGBT: abbreviation of Insulated Gate Bipolar Transistor, insulated gate bipolar transistor;
GTO：GateTurn-Off Thyristor的缩写，门极可关断晶闸管；GTO: abbreviation of GateTurn-Off Thyristor, gate turn-off thyristor;
P型半导体：掺杂P型(Positive，空穴型带正电)离子的半导体；P-type semiconductor: a semiconductor doped with P-type (Positive, hole-type positively charged) ions;
N型半导体：掺杂N型(Negative，电子型带负电)离子的半导体；N-type semiconductor: a semiconductor doped with N-type (Negative, negatively charged electrons) ions;
PN结：PN junction的缩写，由P型半导体和N型半导体组成的PN界面。PN junction: abbreviation of PN junction, a PN interface composed of P-type semiconductor and N-type semiconductor.
为了克服现有技术中IGCT关断拖尾振荡暂无有效抑制方案的不足，本发明提供了一种抑制IGCT关断拖尾振荡的封装结构，在现有压接IGCT封装方案的结构的基础上，引入带有凸台结构的阴极金属连接片代替传统阴极金属连接片，并嵌入软磁磁环，可以有效地抑制IGCT的关断拖尾振荡。相比于现有技术中的IGBT中的方案，例如中国专利申请公开CN110931465A中披露，在封装结构较为接近的IGBT器件中，为了抑制并联IGBT芯片渡越时间振荡，提出了在每一个电路板的下面使用软磁材料贴合在线路板上的方案，但IGBT器件中使用多个IGBT芯片并联，而IGCT则为整晶圆封装，不存在并联情形下需要抑制的渡越时间振荡，因此IGBT器件的抑制方案并无法直接应用于IGCT中来得到本发明的方案。In order to overcome the deficiency of the prior art that there is no effective suppression scheme for the tail oscillation of IGCT turn-off, the present invention provides a packaging structure for suppressing the tail oscillation of IGCT turn-off. On the basis of the structure of the existing crimping IGCT packaging scheme, a cathode metal connecting piece with a boss structure is introduced to replace the traditional cathode metal connecting piece, and a soft magnetic ring is embedded, which can effectively suppress the tail oscillation of IGCT turn-off. Compared with the scheme in IGBT in the prior art, for example, disclosed in the Chinese patent application publication CN110931465A, in order to suppress the transit time oscillation of parallel IGBT chips in IGBT devices with similar packaging structures, a scheme of using soft magnetic materials to adhere to the circuit board under each circuit board is proposed, but multiple IGBT chips are used in parallel in the IGBT device, while the IGCT is a whole wafer package, and there is no transit time oscillation that needs to be suppressed in the parallel situation, so the suppression scheme of the IGBT device cannot be directly applied to the IGCT to obtain the scheme of the present invention.
具体地，本发明提出了一种抑制IGCT关断拖尾振荡的方法，包括以下步骤：Specifically, the present invention proposes a method for suppressing IGCT turn-off tail oscillation, comprising the following steps:
将所述IGCT的阴极金属连接片替换成带有凸台结构的阴极金属连接片，或者在所述IGCT的阴极金属连接片上形成凸台结构；Replacing the cathode metal connecting piece of the IGCT with a cathode metal connecting piece with a boss structure, or forming a boss structure on the cathode metal connecting piece of the IGCT;
在所述凸台位置嵌入软磁磁环。A soft magnetic ring is embedded at the boss position.
在本发明之前，现有技术中并未给出对于IGCT关断拖尾振荡的有效抑制方案，而本发明人经过实验研究发现，在阴极金属连接片上形成凸台结构，在其上套设软磁磁环的话，就可以抑制IGCT关断拖尾振荡。而这种设计思路并不同IGBT的软磁环设计，一方面是由于IGCT中采用整晶圆，不再存在单独的若干个并联的电路板，因此该位置并不同于上述每一个电路板的下端的位置；再一方面，在给定的温度、工作电压条件下，关断拖尾振荡的产生依赖于并联芯片构成寄生谐振电路的寄生电感以及寄生电阻。对于IGBT器件中使用多个IGBT芯片并联，很容易通过并联支路实现谐振回路参数调整，而IGCT则为整晶圆封装，对于谐振回路的参数调整并不能直接类比过来。本发明人经过研究发现，IGCT关断拖尾振荡的有效抑制需要结合IGCT芯片梳条结构和阴极金属连接片来协同完成，由此才有了本发明。Prior to the present invention, the prior art did not provide an effective suppression scheme for the IGCT turn-off tail oscillation. The inventors found through experimental research that if a boss structure is formed on the cathode metal connecting sheet and a soft magnetic ring is set on it, the IGCT turn-off tail oscillation can be suppressed. This design idea is different from the soft magnetic ring design of IGBT. On the one hand, due to the use of a whole wafer in the IGCT, there are no longer several separate parallel circuit boards, so this position is different from the position of the lower end of each of the above circuit boards; on the other hand, under given temperature and operating voltage conditions, the generation of the turn-off tail oscillation depends on the parasitic inductance and parasitic resistance of the parasitic resonant circuit formed by the parallel chips. For the use of multiple IGBT chips in parallel in the IGBT device, it is easy to adjust the resonant circuit parameters through the parallel branch, while the IGCT is a whole wafer package, and the parameter adjustment of the resonant circuit cannot be directly analogized. After research, the inventors found that the effective suppression of the IGCT turn-off tail oscillation needs to be completed in conjunction with the IGCT chip comb structure and the cathode metal connecting sheet, which led to the present invention.
由此，如图2、3所示，现有的压接型IGCT封装结构包括：管壳上盖1、阴极金属连接片2、IGCT芯片3、阳极金属连接片4和管壳底座5，而本发明提出了一种改进的压接IGCT封装结构，其在现有压接IGCT封装方案的结构的基础上，引入了带有凸台结构的阴极金属连接片6来代替传统阴极金属连接片2，并嵌入软磁磁环7，用于抑制IGCT的关断拖尾振荡。Therefore, as shown in Figures 2 and 3, the existing crimped IGCT packaging structure includes: a tube shell cover 1, a cathode metal connecting piece 2, an IGCT chip 3, an anode metal connecting piece 4 and a tube shell base 5, and the present invention proposes an improved crimped IGCT packaging structure, which introduces a cathode metal connecting piece 6 with a boss structure to replace the traditional cathode metal connecting piece 2 on the basis of the structure of the existing crimped IGCT packaging solution, and embeds a soft magnetic ring 7 to suppress the turn-off tail oscillation of the IGCT.
其中，所述阴极金属连接片6的材料具备较高的硬度，且热膨胀系数与IGCT芯片3的热膨胀系数接近。具体而言，所述阴极金属连接片6的材料通常例如采用金属钼，莫氏硬度约为5.5，或者可以选用硬度为HRC80的钼铜合金，与之对比的，铜的莫氏硬度才为3.0；钼的热膨胀系数约为4.9×10-6/K，Si IGCT芯片的热膨胀系数约为2.44×10-6/K，与之对比的，铜的热膨胀系数约为1.65×10-5/K。The material of the cathode metal connecting plate 6 has a relatively high hardness, and its thermal expansion coefficient is close to that of the IGCT chip 3. Specifically, the material of the cathode metal connecting plate 6 is usually, for example, metal molybdenum, with a Mohs hardness of about 5.5, or a molybdenum-copper alloy with a hardness of HRC80, by contrast, the Mohs hardness of copper is only 3.0; the thermal expansion coefficient of molybdenum is about 4.9×10 -6 /K, and the thermal expansion coefficient of the Si IGCT chip is about 2.44×10 -6 /K, by contrast, the thermal expansion coefficient of copper is about 1.65×10 -5 /K.
其中，所述软磁磁环7可以是套设在所述凸台上，软磁磁环7上下表面间形成通孔，阴极金属连接片的凸台穿过所述通孔，例如软磁磁环7的通孔与阴极金属连接片6的凸台一一对应。Among them, the soft magnetic ring 7 can be sleeved on the boss, and a through hole is formed between the upper and lower surfaces of the soft magnetic ring 7, and the boss of the cathode metal connecting piece passes through the through hole. For example, the through hole of the soft magnetic ring 7 corresponds one-to-one with the boss of the cathode metal connecting piece 6.
其中，所述软磁磁环7可以为一层，也可以为多层。每一层的厚度例如为0.1mm。The soft magnetic ring 7 may be a single layer or multiple layers, and the thickness of each layer is, for example, 0.1 mm.
其中，所述软磁磁环7的材质为软磁材料，例如镍铁材料或坡莫合金材料。The soft magnetic ring 7 is made of soft magnetic material, such as nickel-iron material or permalloy material.
其中，所述软磁磁环7的通孔可以有多种布局方案，例如可以与阴极金属连接片6的凸台一一对应，或者可以与IGCT芯片3的阴极梳条一一对应，也可以将IGCT芯片任意等分。其中，所述IGCT芯片3的结构如图4所示，包括阴极梳条301、门极环302、表面绝缘层303、芯片终端304。阴极梳条301略高于表面绝缘层303，与阴极金属连接片2通过压力接触实现电气连接。The through holes of the soft magnetic ring 7 can have multiple layout schemes, for example, they can correspond one-to-one with the bosses of the cathode metal connecting piece 6, or can correspond one-to-one with the cathode comb bars of the IGCT chip 3, or the IGCT chip can be divided into equal parts at will. The structure of the IGCT chip 3 is shown in FIG4, including cathode comb bars 301, gate ring 302, surface insulation layer 303, and chip terminal 304. The cathode comb bars 301 are slightly higher than the surface insulation layer 303, and are electrically connected to the cathode metal connecting piece 2 through pressure contact.
本发明还提出了一种压接型IGCT，所述压接型IGCT的阴极金属连接片6上带有凸台结构，并嵌入了软磁磁环7。The present invention further proposes a crimping type IGCT, wherein the cathode metal connecting piece 6 of the crimping type IGCT has a boss structure and a soft magnetic ring 7 is embedded therein.
其中，所述阴极金属连接片6的材料具备较高的硬度，例如莫氏硬度在5～6之间，优选为5.5(即金属钼)；且热膨胀系数与IGCT芯片3的热膨胀系数接近。The material of the cathode metal connecting plate 6 has a relatively high hardness, for example, a Mohs hardness between 5 and 6, preferably 5.5 (ie, metal molybdenum); and a thermal expansion coefficient close to that of the IGCT chip 3 .
其中，所述软磁磁环7可以是套设在所述凸台上，软磁磁环7上下表面间形成通孔，通孔穿过阴极金属连接片的凸台，例如软磁磁环7的通孔与阴极金属连接片6的凸台一一对应。Among them, the soft magnetic ring 7 can be sleeved on the boss, and a through hole is formed between the upper and lower surfaces of the soft magnetic ring 7, and the through hole passes through the boss of the cathode metal connecting piece. For example, the through hole of the soft magnetic ring 7 corresponds one-to-one with the boss of the cathode metal connecting piece 6.
其中，所述软磁磁环7可以为一层，也可以为多层。每一层的厚度例如为0.1毫米。The soft magnetic ring 7 may be a single layer or multiple layers, and the thickness of each layer is, for example, 0.1 mm.
其中，所述软磁磁环7的材质为软磁材料，例如镍铁材料或坡莫合金材料。所述软磁磁环7的特点为：磁环环绕的电路为小电流时，磁导率很大，磁环的电感也较大；而磁环环绕的电路为大电流时，磁饱和，磁环电感为零，即软磁材料只在低电流阶段起作用。The material of the soft magnetic ring 7 is a soft magnetic material, such as nickel-iron material or permalloy material. The soft magnetic ring 7 has the following characteristics: when the circuit surrounded by the ring has a small current, the magnetic permeability is large and the inductance of the ring is also large; when the circuit surrounded by the ring has a large current, the ring is magnetically saturated and the inductance of the ring is zero, that is, the soft magnetic material only works in the low current stage.
其中，所述软磁磁环7的通孔可以有多种布局方案，例如可以与阴极金属连接片6的凸台一一对应，或者可以与IGCT芯片3的阴极梳条一一对应，也可以将IGCT芯片任意等分。The through holes of the soft magnetic ring 7 may have a variety of layout schemes, for example, they may correspond one-to-one with the bosses of the cathode metal connecting sheet 6, or may correspond one-to-one with the cathode combs of the IGCT chip 3, or the IGCT chip may be divided into equal parts at will.
本发明还提出了一种采用上述压接型IGCT的功率器件及电子装置/系统。所述功率器件例如为半导体开关器件，所述电子装置/系统例如为变流器、静态无功补偿器(SVC)、中高压电机驱动器或高压输电系统。The present invention also proposes a power device and an electronic device/system using the above-mentioned crimped IGCT. The power device is, for example, a semiconductor switch device, and the electronic device/system is, for example, a converter, a static VAR compensator (SVC), a medium- and high-voltage motor driver, or a high-voltage power transmission system.
下文将通过具体实施例来对本发明作进一步阐述说明。需要注意的是，下述的实施例仅是举例说明，而不是用于限定本发明。The present invention will be further described below through specific examples. It should be noted that the following examples are only for illustration and are not intended to limit the present invention.
本发明实施例提出了两种压接型IGCT的实现方式，其主要区别在于软磁磁环7的结构不同，软磁磁环7的结构主要通过如图5和图6所示的两种方案来实现。The embodiment of the present invention proposes two implementation methods of the crimped IGCT, the main difference between which is the different structures of the soft magnetic ring 7 . The structure of the soft magnetic ring 7 is mainly implemented by two solutions as shown in FIG. 5 and FIG. 6 .
实施例1Example 1
实施例1要求保护一种压接型IGCT，所述压接型IGCT的阴极金属连接片6上带有凸台结构，并嵌入了软磁磁环7。Embodiment 1 claims protection for a crimped IGCT, wherein the cathode metal connecting piece 6 of the crimped IGCT has a boss structure and a soft magnetic ring 7 is embedded therein.
在如图5所示的方案1中，所述软磁磁环7包括软磁材料701和通孔702。所述通孔702应大于所述阴极金属连接片6的凸台结构，所述阴极金属连接片6的凸台结构穿过所述软磁磁环7的通孔702。所述阴极梳条301、所述阴极金属连接片6的凸台结构、所述软磁磁环7的通孔702一一对应。In the scheme 1 shown in FIG5 , the soft magnetic ring 7 includes a soft magnetic material 701 and a through hole 702. The through hole 702 should be larger than the boss structure of the cathode metal connecting piece 6, and the boss structure of the cathode metal connecting piece 6 passes through the through hole 702 of the soft magnetic ring 7. The cathode comb bar 301, the boss structure of the cathode metal connecting piece 6, and the through hole 702 of the soft magnetic ring 7 correspond to each other.
实施例2Example 2
实施例2要求保护一种压接型IGCT，所述压接型IGCT的阴极金属连接片6上带有凸台结构，并嵌入了软磁磁环7。Embodiment 2 claims protection for a crimped IGCT, wherein the cathode metal connecting piece 6 of the crimped IGCT has a boss structure and a soft magnetic ring 7 is embedded therein.
在如图6所示的方案2中，所述软磁磁环7包括软磁材料703和通孔704。所述通孔704应大于所述阴极金属连接片6的凸台结构，所述阴极金属连接片6的凸台结构穿过所述软磁磁环7的通孔704。所述阴极金属连接片6的凸台结构与所述软磁磁环7的通孔702一一对应。所述阴极金属连接片6的凸台结构与若干个所述阴极梳条301连接。所述通孔704可以将所述软磁磁环7任意等分(图6中给出了4等分的结构示意图)。In scheme 2 as shown in FIG6 , the soft magnetic ring 7 includes a soft magnetic material 703 and a through hole 704. The through hole 704 should be larger than the boss structure of the cathode metal connecting piece 6, and the boss structure of the cathode metal connecting piece 6 passes through the through hole 704 of the soft magnetic ring 7. The boss structure of the cathode metal connecting piece 6 corresponds one-to-one to the through hole 702 of the soft magnetic ring 7. The boss structure of the cathode metal connecting piece 6 is connected to a plurality of the cathode comb bars 301. The through hole 704 can divide the soft magnetic ring 7 into arbitrarily equal parts (a schematic diagram of the structure divided into 4 equal parts is given in FIG6 ).
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.
Claims (10)
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