CN118198117A - Method for inhibiting IGCT turn-off tailing oscillation, crimping type IGCT and application - Google Patents
Method for inhibiting IGCT turn-off tailing oscillation, crimping type IGCT and application Download PDFInfo
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- CN118198117A CN118198117A CN202410175143.XA CN202410175143A CN118198117A CN 118198117 A CN118198117 A CN 118198117A CN 202410175143 A CN202410175143 A CN 202410175143A CN 118198117 A CN118198117 A CN 118198117A
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- 230000010355 oscillation Effects 0.000 title claims abstract description 29
- 238000002788 crimping Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000002401 inhibitory effect Effects 0.000 title abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 53
- 239000000696 magnetic material Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910000889 permalloy Inorganic materials 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 238000004806 packaging method and process Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 2
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41716—Cathode or anode electrodes for thyristors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
A method for inhibiting IGCT turn-off tailing oscillation, a crimping type IGCT and application thereof. The method for suppressing IGCT turn-off tailing oscillation comprises the following steps: replacing the cathode metal connecting sheet of the IGCT with a cathode metal connecting sheet with a boss structure, or forming the boss structure on the cathode metal connecting sheet of the IGCT; and embedding a soft magnetic ring at the boss position. The invention effectively inhibits the turn-off trailing current oscillation of the crimping IGCT device packaged by the whole wafer, and improves the reliability of a device application system; the invention is improved and completed on the prior crimping IGCT device packaging form, the assembly is simple, the used soft magnetic material only acts under the condition of small current, and the electrical parameters of the device during normal operation are not influenced; the used soft magnetic ring can be adjusted into one or more layers according to actual requirements, and is flexible and convenient.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to a method for inhibiting IGCT turn-off tailing oscillation, a crimping type IGCT and application thereof, which are used for optimizing the switching characteristics of an IGCT device.
Background
IGCT (INTEGRATED GATE Commutated Thyristor) is a thyristor, combines the characteristics of GTO (gate turn-off) thyristors and MOSFETs (metal oxide semiconductor field effect transistors), integrates the advantages of the two devices, and can improve the overall efficiency and performance of high power applications. The IGCT integrates the packaged whole wafer gate commutated thyristor and the gate drive loop on the printed circuit board by adopting interconnection design, has high voltage and current capacity and reliability, low on-state voltage drop and production cost, and has remarkable advantages in the application fields of power grid, variable speed drive and the like.
When the switching characteristics of the specific working conditions of the IGCT are tested, the tailing oscillation of the IGCT can cause the voltage and current to rapidly oscillate, the typical tailing oscillation test waveform of the IGCT is shown in fig. 1 (the oscillation part is marked by a solid square frame), the conduction and radiation electromagnetic interference of the high-frequency oscillation also has important influence on the control system and the electromagnetic environment, and the inhibition of the tailing oscillation of the IGCT is important for the safe and reliable operation of the system.
However, technical search shows that for turn-off tailing oscillation of IGCT, no effective suppression scheme is provided in the prior art, so that development of related technology is needed to solve the problem.
Disclosure of Invention
Accordingly, it is a primary object of the present invention to provide a method for suppressing IGCT turn-off tailing oscillation, a crimp type IGCT and an application thereof, so as to at least partially solve the above-mentioned problems.
In order to achieve the above object, as a first aspect of the present invention, there is provided a method of suppressing IGCT off-tailing oscillations, comprising the steps of:
replacing the cathode metal connecting sheet of the IGCT with a cathode metal connecting sheet with a boss structure, or forming the boss structure on the cathode metal connecting sheet of the IGCT;
And embedding a soft magnetic ring at the boss position.
As a second aspect of the present invention, there is also provided a crimping IGCT, wherein the cathode metal connecting piece of the crimping IGCT is provided with a boss structure, and a soft magnetic ring is embedded.
As a third aspect of the present invention, there is also proposed a power device, an electronic device or a system employing the crimp-type IGCT as described above; wherein the power device is preferably a semiconductor switching device; the electronic device or system is preferably a current transformer, a Static Var Compensator (SVC), a medium-high voltage motor drive or a high voltage power transmission system.
Based on the technical scheme, the method for inhibiting the turn-off tailing oscillation of the IGCT device, the crimping type IGCT and the application of the method have at least one of the following beneficial effects compared with the prior art:
1. the tail current oscillation of the crimping IGCT device of the whole wafer package is effectively restrained, and the reliability of a device application system is improved.
2. The method is improved and completed in the existing crimping IGCT device packaging form, and the assembly is simple.
3. The soft magnetic material only acts under the condition of small current, and reaches the saturated magnetic field intensity under the condition of large current, the equivalent inductance is zero, and the electrical parameters of the device during normal operation are not influenced.
4. The used soft magnetic ring can be adjusted into one or more layers according to actual requirements, and is flexible and convenient.
Drawings
The method and apparatus of the present invention are further described below with reference to the accompanying drawings and examples:
FIG. 1 is a schematic diagram of a trailing oscillation waveform of a prior art IGCT device;
FIG. 2 is a schematic diagram of a crimped packaging structure of a prior art IGCT device;
FIG. 3 is a schematic diagram of an IGCT device compression package structure for suppressing device turn-off tailing oscillations of the present invention;
FIG. 4 is a top view of the IGCT chip structure of the present invention;
FIG. 5 is a schematic diagram of a soft magnetic ring according to an embodiment of the present invention;
Fig. 6 is a schematic structural view of a soft magnetic ring according to another embodiment of the present invention.
Detailed Description
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent.
In the present invention, the definitions of partial abbreviations and key terms are as follows:
GCT: abbreviation Gate-Commutated Thyristor, gate commutated thyristor;
IGCT: INTEGRATED GATE-Commutated Thyristor, an integrated gate commutated thyristor;
IGBT: insulated Gate Bipolar Transistor, insulated gate bipolar transistor;
GTO: gateTurn-Off Thyristor, gate turn-Off Thyristor;
p-type semiconductor: a semiconductor doped with P-type (Positive, positive hole-type) ions;
n-type semiconductor: a semiconductor doped with N-type (Negative, electron-type negatively charged) ions;
PN junction: the abbreviation of PN junction is PN interface composed of P type semiconductor and N type semiconductor.
In order to overcome the defect that the prior art has no effective suppression scheme for IGCT turn-off tailing oscillation temporarily, the invention provides a packaging structure for suppressing IGCT turn-off tailing oscillation. Compared with the scheme in the IGBT in the prior art, for example, in the scheme disclosed in the chinese patent application publication CN110931465A, in the IGBT device with a relatively close package structure, in order to suppress the transition time oscillation of the parallel IGBT chips, a scheme of using soft magnetic material to attach to the circuit board under each circuit board is proposed, but a plurality of IGBT chips are used in parallel in the IGBT device, while the IGCT is a whole wafer package, and the transition time oscillation to be suppressed in the parallel situation does not exist, so the suppression scheme of the IGBT device cannot be directly applied to the IGCT to obtain the scheme of the present invention.
Specifically, the invention provides a method for inhibiting IGCT turn-off tailing oscillation, which comprises the following steps:
replacing the cathode metal connecting sheet of the IGCT with a cathode metal connecting sheet with a boss structure, or forming the boss structure on the cathode metal connecting sheet of the IGCT;
And embedding a soft magnetic ring at the boss position.
Before the invention, an effective inhibition scheme for IGCT turn-off tailing oscillation is not provided in the prior art, but the inventor finds that the IGCT turn-off tailing oscillation can be inhibited by forming a boss structure on a cathode metal connecting sheet and sleeving a soft magnetic ring on the boss structure through experimental research. The design concept is different from the soft magnetic ring design of the IGBT, on one hand, because the IGCT adopts a whole wafer, and a plurality of independent parallel circuit boards are not existed, the position is different from the position of the lower end of each circuit board; on the other hand, under the given conditions of temperature and working voltage, the generation of the turn-off tailing oscillation depends on the parasitic inductance and the parasitic resistance of the parasitic resonance circuit formed by the parallel chips. For the IGBT device, a plurality of IGBT chips are connected in parallel, the parameter adjustment of the resonant circuit is easy to realize through parallel branches, the IGCT is packaged by a whole wafer, and the parameter adjustment of the resonant circuit cannot be directly analogized. The inventor discovers that the effective inhibition of IGCT turn-off tailing oscillation needs to be completed cooperatively by combining an IGCT chip comb strip structure and a cathode metal connecting sheet, thereby the invention is only available.
As a result, as shown in fig. 2 and 3, the conventional crimp IGCT package structure includes: the invention provides an improved crimping IGCT packaging structure, which is based on the structure of the existing crimping IGCT packaging scheme, introduces a cathode metal connecting sheet 6 with a boss structure to replace the traditional cathode metal connecting sheet 2 and is embedded with a soft magnetic ring 7 for inhibiting turn-off tailing oscillation of an IGCT.
Wherein, the material of the cathode metal connecting sheet 6 has higher hardness, and the thermal expansion coefficient is close to that of the IGCT chip 3. In particular, the material of the cathode metal connection piece 6 is usually molybdenum, for example, with a mohs hardness of about 5.5, or alternatively a molybdenum-copper alloy with a hardness of HRC80, in contrast to 3.0; molybdenum has a thermal expansion coefficient of about 4.9X10 -6/K, and Si IGCT chips have a thermal expansion coefficient of about 2.44X10 -6/K, whereas copper has a thermal expansion coefficient of about 1.65X10 -5/K.
Wherein, the soft magnetic ring 7 can be sleeved on the boss, a through hole is formed between the upper surface and the lower surface of the soft magnetic ring 7, and the boss of the cathode metal connecting sheet passes through the through hole, for example, the through hole of the soft magnetic ring 7 corresponds to the boss of the cathode metal connecting sheet 6 one by one.
The soft magnetic ring 7 may be one layer or may be multiple layers. The thickness of each layer is for example 0.1mm.
Wherein, the soft magnetic ring 7 is made of soft magnetic material, such as nickel-iron material or permalloy material.
The through holes of the soft magnetic ring 7 may have various layout schemes, for example, may correspond to the bosses of the cathode metal connecting sheet 6 one by one, or may correspond to the cathode strips of the IGCT chip 3 one by one, or may also equally divide the IGCT chip at will. The structure of the IGCT chip 3 is shown in fig. 4, and includes a cathode comb 301, a gate ring 302, a surface insulating layer 303, and a chip terminal 304. The cathode sliver 301 is slightly higher than the surface insulating layer 303, and is electrically connected with the cathode metal connecting sheet 2 through pressure contact.
The invention also provides a crimping IGCT, wherein the cathode metal connecting sheet 6 of the crimping IGCT is provided with a boss structure and is embedded with a soft magnetic ring 7.
Wherein the material of the cathode metal connecting sheet 6 has higher hardness, for example, the Mohs hardness is between 5 and 6, and is preferably 5.5 (i.e. metal molybdenum); and the coefficient of thermal expansion is close to that of IGCT chip 3.
Wherein, the soft magnetic ring 7 may be sleeved on the boss, and a through hole is formed between the upper surface and the lower surface of the soft magnetic ring 7, and the through hole passes through the boss of the cathode metal connecting sheet, for example, the through hole of the soft magnetic ring 7 corresponds to the boss of the cathode metal connecting sheet 6 one by one.
The soft magnetic ring 7 may be one layer or may be multiple layers. Each layer has a thickness of, for example, 0.1mm.
Wherein, the soft magnetic ring 7 is made of soft magnetic material, such as nickel-iron material or permalloy material. The soft magnetic ring 7 is characterized in that: when the circuit surrounded by the magnetic ring is small current, the magnetic permeability is large, and the inductance of the magnetic ring is also large; when the circuit surrounded by the magnetic ring is high current, the magnetic saturation is realized, and the magnetic ring inductance is zero, namely, the soft magnetic material only acts in the low current stage.
The through holes of the soft magnetic ring 7 may have various layout schemes, for example, may correspond to the bosses of the cathode metal connecting sheet 6 one by one, or may correspond to the cathode strips of the IGCT chip 3 one by one, or may also equally divide the IGCT chip at will.
The invention also provides a power device and an electronic device/system adopting the crimping IGCT. The power devices are for example semiconductor switching devices and the electronic devices/systems are for example converters, static Var Compensators (SVCs), medium-high voltage motor drives or high voltage transmission systems.
The invention will be further illustrated by the following examples. It should be noted that the following examples are illustrative only and are not intended to limit the present invention.
The embodiment of the invention provides two implementation modes of crimping IGCT, which are mainly different in the structure of the soft magnetic ring 7, and the structure of the soft magnetic ring 7 is mainly realized by two schemes as shown in fig. 5 and 6.
Example 1
Embodiment 1 claims a crimp-type IGCT with a boss structure on the cathode metal tab 6 of the crimp-type IGCT and embedded with a soft magnetic ring 7.
In the scheme 1 shown in fig. 5, the soft magnetic ring 7 includes a soft magnetic material 701 and a through hole 702. The through hole 702 should be larger than the boss structure of the cathode metal connection piece 6, and the boss structure of the cathode metal connection piece 6 passes through the through hole 702 of the soft magnetic ring 7. The cathode comb strips 301, the boss structure of the cathode metal connecting sheet 6 and the through holes 702 of the soft magnetic ring 7 are in one-to-one correspondence.
Example 2
Embodiment 2 claims a crimp-type IGCT with a boss structure on the cathode metal tab 6 of the crimp-type IGCT and embedded with a soft magnetic ring 7.
In the scheme 2 shown in fig. 6, the soft magnetic ring 7 includes a soft magnetic material 703 and a through hole 704. The through hole 704 should be larger than the boss structure of the cathode metal connection piece 6, and the boss structure of the cathode metal connection piece 6 passes through the through hole 704 of the soft magnetic ring 7. The boss structure of the cathode metal connecting sheet 6 corresponds to the through holes 702 of the soft magnetic ring 7 one by one. The boss structure of the cathode metal connecting sheet 6 is connected with a plurality of cathode strips 301. The through hole 704 may divide the soft magnetic ring 7 into arbitrary halves (a schematic diagram of a 4-half structure is shown in fig. 6).
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the invention thereto, but to limit the invention thereto, and any modifications, equivalents, improvements and equivalents thereof may be made without departing from the spirit and principles of the invention.
Claims (10)
1. A method of suppressing IGCT turn-off tailing oscillations, comprising the steps of:
replacing the cathode metal connecting sheet of the IGCT with a cathode metal connecting sheet with a boss structure, or forming the boss structure on the cathode metal connecting sheet of the IGCT;
And embedding a soft magnetic ring at the boss position.
2. The method of claim 1, wherein the cathode metal tab is made of metal molybdenum or molybdenum copper.
3. The method of claim 1, wherein the soft magnetic ring is sleeved on the boss; and/or
And a through hole is formed between the upper surface and the lower surface of the soft magnetic ring, and the boss of the cathode metal connecting sheet penetrates through the through hole.
4. The method of claim 1, wherein the soft magnetic ring is multilayered; and/or
The thickness of each layer of the soft magnetic ring is 0.1-1 mm, preferably 0.1 mm; and/or
The soft magnetic ring is made of soft magnetic materials, preferably nickel-iron alloy materials or permalloy materials; and/or
The sum of the thicknesses of the soft magnetic rings is smaller than the height of the boss on the cathode metal connecting sheet.
5. The method of claim 1, wherein the bosses of the cathode metal connecting sheet are in one-to-one correspondence with the cathode bars of the IGCT chip, and the through holes of the soft magnetic ring are in one-to-one correspondence with the bosses of the cathode metal connecting sheet;
Or the lug boss of the cathode metal connecting sheet is connected with the cathode comb strips of the IGCT chips and divides the IGCT chips into arbitrary equal parts, and the through holes of the soft magnetic ring are in one-to-one correspondence with the lug boss of the cathode metal connecting sheet.
6. A crimping type IGCT is characterized in that a boss structure is arranged on a cathode metal connecting sheet of the crimping type IGCT, and a soft magnetic ring is embedded in the boss structure.
7. A crimped IGCT according to claim 6, wherein the cathode metal connecting piece is made of molybdenum or molybdenum-copper alloy.
8. The crimping IGCT of claim 6, wherein the soft magnetic loop is sleeved on the boss; and/or
A through hole is formed between the upper surface and the lower surface of the soft magnetic ring, and a boss of the cathode metal connecting sheet penetrates through the through hole; and/or
The soft magnetic ring is multi-layered; and/or
The thickness of each layer of the soft magnetic ring is 0.1-1 mm, preferably 0.1 mm; and/or
The soft magnetic ring is made of soft magnetic materials, preferably nickel-iron alloy materials or permalloy materials; and/or
The soft magnetic loop only acts in the low current phase.
9. The crimping type IGCT of claim 6, wherein the bosses of the cathode metal connecting sheet are in one-to-one correspondence with the cathode bars of the IGCT chip, and the through holes of the soft magnetic ring are in one-to-one correspondence with the bosses of the cathode metal connecting sheet; or alternatively
The lug boss of the cathode metal connecting sheet is connected with the cathode comb strips of the IGCT chips and divides the IGCT chips into arbitrary equal parts, and the through holes of the soft magnetic ring are in one-to-one correspondence with the lug boss of the cathode metal connecting sheet.
10. A power device, electronic device or system employing a crimped IGCT as claimed in any one of claims 6 to 9; wherein the power device is preferably a semiconductor switching device; the electronic device or system is preferably a current transformer, a Static Var Compensator (SVC), a medium-high voltage motor drive or a high voltage power transmission system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410175143.XA CN118198117A (en) | 2024-02-07 | 2024-02-07 | Method for inhibiting IGCT turn-off tailing oscillation, crimping type IGCT and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410175143.XA CN118198117A (en) | 2024-02-07 | 2024-02-07 | Method for inhibiting IGCT turn-off tailing oscillation, crimping type IGCT and application |
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| Publication Number | Publication Date |
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| CN118198117A true CN118198117A (en) | 2024-06-14 |
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| CN202410175143.XA Pending CN118198117A (en) | 2024-02-07 | 2024-02-07 | Method for inhibiting IGCT turn-off tailing oscillation, crimping type IGCT and application |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6347977A (en) * | 1986-08-18 | 1988-02-29 | Mitsubishi Electric Corp | Gate turn off thyristor |
| JP2001110823A (en) * | 1999-10-13 | 2001-04-20 | Hitachi Ltd | Manufacturing method of semiconductor device |
| US20020005578A1 (en) * | 1998-01-22 | 2002-01-17 | Hironori Kodama | Press contact type semiconductor device and converter using same |
| US20130277711A1 (en) * | 2012-04-18 | 2013-10-24 | International Rectifier Corporation | Oscillation Free Fast-Recovery Diode |
| CN110232234A (en) * | 2019-06-04 | 2019-09-13 | 华北电力大学 | The production method that a kind of PEET vibrates adjusting means and IGBT submodule |
| CN110931465A (en) * | 2018-09-20 | 2020-03-27 | 全球能源互联网研究院有限公司 | Device for inhibiting transition time oscillation of crimping type IGBT device |
-
2024
- 2024-02-07 CN CN202410175143.XA patent/CN118198117A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6347977A (en) * | 1986-08-18 | 1988-02-29 | Mitsubishi Electric Corp | Gate turn off thyristor |
| US20020005578A1 (en) * | 1998-01-22 | 2002-01-17 | Hironori Kodama | Press contact type semiconductor device and converter using same |
| JP2001110823A (en) * | 1999-10-13 | 2001-04-20 | Hitachi Ltd | Manufacturing method of semiconductor device |
| US20130277711A1 (en) * | 2012-04-18 | 2013-10-24 | International Rectifier Corporation | Oscillation Free Fast-Recovery Diode |
| CN110931465A (en) * | 2018-09-20 | 2020-03-27 | 全球能源互联网研究院有限公司 | Device for inhibiting transition time oscillation of crimping type IGBT device |
| CN110232234A (en) * | 2019-06-04 | 2019-09-13 | 华北电力大学 | The production method that a kind of PEET vibrates adjusting means and IGBT submodule |
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