CN118186577A - Gallium nitride epitaxial structure and manufacturing method thereof - Google Patents
Gallium nitride epitaxial structure and manufacturing method thereof Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 106
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 104
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000006243 chemical reaction Methods 0.000 claims description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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Abstract
The invention discloses a gallium nitride epitaxial structure and a manufacturing method thereof, wherein the gallium nitride epitaxial structure comprises the following components: the substrate layer, the first buffer layer, the second buffer layer and the gallium nitride epitaxial layer; the first buffer layer is located above the substrate layer, the second buffer layer is located above the first buffer layer, and the gallium nitride epitaxial layer is located above the second buffer layer. By arranging the first buffer layer and the second buffer layer between the substrate layer and the gallium nitride epitaxial layer, stress generated due to lattice mismatch is reduced, and the binding force between the gallium nitride epitaxial layer and the substrate layer is improved, so that the generated gallium nitride epitaxial structure has higher quality.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a gallium nitride epitaxial structure and a manufacturing method thereof.
Background
Gallium nitride (GaN) is a representative material for the third generation semiconductor industry. At present, gallium nitride epitaxial wafers are mainly prepared by taking sapphire as a substrate and epitaxially growing gallium nitride on the sapphire, and when the sapphire is taken as the substrate to form an epitaxial wafer, a buffer layer is arranged between the substrate and the sapphire and is used for buffering stress between the epitaxial wafer and the substrate, but stress generated due to lattice mismatch of the gallium nitride and the sapphire substrate can not be completely buffered only by one buffer layer, so that the quality of the produced gallium nitride epitaxial structure is low.
Disclosure of Invention
The invention provides a gallium nitride epitaxial structure and a manufacturing method thereof, which are used for solving the technical problem that the gallium nitride epitaxial structure is low in quality due to stress generated by lattice mismatch of a substrate layer and a gallium nitride epitaxial layer.
In order to solve the technical problems, the invention adopts the following technical scheme:
The invention is realized by the following technical scheme:
The invention provides a gallium nitride epitaxial structure, which comprises: the substrate layer, the first buffer layer, the second buffer layer and the gallium nitride epitaxial layer; the first buffer layer is located above the substrate layer, the second buffer layer is located above the first buffer layer, and the gallium nitride epitaxial layer is located above the second buffer layer.
Further, the second buffer layer includes: the GaN layers, the BN layers and the MgN layers are stacked alternately, and the layers of the second buffer layer, the first buffer layer and the gallium nitride epitaxial layer are all GaN layers.
Further, the thickness of the second buffer layer is 20-60 nm, and the thicknesses of the GaN layer, the BN layer and the MgN layer are all 1-4 nm.
Further, the substrate layer is a silicon substrate, the first buffer layer is an AlGaN buffer layer, and the thickness of the first buffer layer is 10-40 nm.
Further, the thickness of the gallium nitride epitaxial layer is 1-3.5 mu m.
The invention also provides a manufacturing method of the gallium nitride epitaxial structure, which is used for manufacturing the gallium nitride epitaxial structure and comprises the following steps of:
Placing the substrate on a base of MOCVD equipment;
Drying the substrate;
Depositing a first buffer layer on the substrate;
depositing a second buffer layer on the first buffer layer;
growing a gallium nitride epitaxial layer on the second buffer layer;
nitrogen was introduced so that the reaction chamber was lowered to room temperature and discharged.
Further, the drying treatment of the substrate includes the following steps:
controlling the temperature of the reaction chamber to be 950-1050 ℃ and the pressure to be 8000-15000 Pa;
And introducing hydrogen to bake the substrate for 5-15 minutes.
Further, the depositing the first buffer layer on the substrate includes the steps of:
Controlling the pressure and the temperature of the reaction chamber to be unchanged;
And continuously introducing a nitrogen source into the reaction chamber, and synchronously and alternately introducing an aluminum source and a gallium source so as to form a first buffer layer on the substrate.
Further, the depositing a second buffer layer on the first buffer layer includes the steps of:
controlling the temperature of the reaction chamber to be 750-1200 ℃ and the pressure to be 10000-90000 Pa;
and continuously introducing a nitrogen source into the reaction chamber, and alternately controlling the introduction of a gallium source, a boron source and a magnesium source so as to deposit the second buffer layer on the first buffer layer.
Further, the growing the gallium nitride epitaxial layer on the second buffer layer comprises the following steps:
Controlling the pressure and the temperature of the reaction chamber to be unchanged;
and introducing a gallium source and a nitrogen source into the reaction chamber to grow a gallium nitride epitaxial layer.
The invention has the beneficial effects that:
Compared with the prior art, the gallium nitride epitaxial structure provided by the invention has the advantages that the first buffer layer and the second buffer layer are arranged between the substrate layer and the gallium nitride epitaxial layer, so that the stress generated due to lattice mismatch is reduced, the binding force between the gallium nitride epitaxial layer and the substrate layer is improved, and the quality of the generated gallium nitride epitaxial structure is improved; according to the gallium nitride epitaxial structure growth method, the first buffer layer and the second buffer layer are prepared on the substrate to buffer stress generated between the gallium nitride epitaxial layer and the substrate due to lattice mismatch, so that dislocation density of the gallium nitride epitaxial structure is reduced, and quality of the generated gallium nitride epitaxial structure is improved.
The foregoing description is only an overview of the present invention, and is intended to be more clearly understood as being carried out in accordance with the following description of the preferred embodiments, as well as other objects, features and advantages of the present invention.
Drawings
Fig. 1 is a schematic structural diagram of a gan epitaxial structure according to an embodiment of the present invention;
FIG. 2 is a flow chart of a method for fabricating an epitaxial structure of GaN in accordance with an embodiment of the invention;
fig. 3 is a flowchart of step S2 in the method for manufacturing a gan epitaxial structure according to an embodiment of the invention;
fig. 4 is a flowchart of step S3 in the method for manufacturing a gan epitaxial structure according to an embodiment of the invention;
fig. 5 is a flowchart of step S4 in the method for manufacturing a gan epitaxial structure according to an embodiment of the invention;
Fig. 6 is a flowchart of step S5 in a method for manufacturing a gan epitaxial structure according to an embodiment of the invention.
Reference numerals illustrate:
10. A substrate layer; 20. a first buffer layer; 30. a second buffer layer; 31. a GaN layer; 32. a BN layer; 33. a MgN layer; 40. and (3) a gallium nitride epitaxial layer.
Detailed Description
The present invention will be described in further detail with reference to the drawings and the detailed description, in order to make the objects, technical solutions and advantages of the present invention more apparent.
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships as described based on the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be attached, detached, or integrated, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms should not be understood as necessarily being directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, one skilled in the art can combine and combine the different embodiments or examples described in this specification.
Referring to fig. 1, the present invention provides a gallium nitride epitaxial structure, comprising: a substrate layer 10, a first buffer layer 20, a second buffer layer 30, and a gallium nitride epitaxial layer 40; the first buffer layer 20 is located above the substrate layer 10, the second buffer layer 30 is located above the first buffer layer 20, and the gallium nitride epitaxial layer 40 is located above the second buffer layer 30.
In the present embodiment, the substrate layer 10 is a silicon substrate, so as to avoid defects in the gallium nitride epitaxial structure caused by lattice mismatch, and in other embodiments, the substrate layer 10 may be a sapphire substrate or a silicon carbide substrate.
In this embodiment, the thickness of the gallium nitride epitaxial layer 40 is 1 to 3.5 μm.
Specifically, the first buffer layer 20 grows above the substrate layer 10, the second buffer layer 30 is deposited above the first buffer layer 20, the gallium nitride epitaxial layer 40 is located above the second buffer layer 30, the first buffer layer 20 and the second buffer layer 30 are used for buffering stress generated between the gallium nitride epitaxial layer 40 and the substrate layer 10 due to lattice mismatch, dislocation density of the gallium nitride epitaxial structure is reduced, and quality of the gallium nitride epitaxial structure is improved.
Compared with the prior art, the gallium nitride epitaxial structure provided by the invention has the advantages that the first buffer layer 20 and the second buffer layer 30 are arranged between the substrate layer 10 and the gallium nitride epitaxial layer 40, so that the stress generated due to lattice mismatch is reduced, the binding force between the gallium nitride epitaxial layer 40 and the substrate layer 10 is improved, and the generated gallium nitride epitaxial structure has higher quality.
In this embodiment, the substrate layer 10 is a silicon substrate, the first buffer layer 20 is an AlGaN buffer layer, and the thickness of the first buffer layer 20 is 10 to 40nm.
Specifically, the lattice constant of AlGaN is very close to that of the silicon substrate, and AlGaN has better chemical stability than other nitrides, so as to improve the interface quality between the first buffer layer 20 and the substrate layer 10, reduce interface defects, and improve the crystal quality of the gallium nitride epitaxial layer 40.
In this embodiment, silicon is used as the substrate layer 10, alGaN is used as a material for preparing the first buffer layer 20, and the thickness of the first buffer layer 20 is 10 to 40nm. AlGaN is not too thick or too thin as a material for preparing the first buffer layer 20, and if the thickness of the first buffer layer 20 is greater than 100nm, the time for forming the first buffer layer 20 is increased, and heat dissipation is affected, and if the thickness of the first buffer layer 20 is less than 10nm, the effect of lattice matching and stress matching cannot be achieved by the thickness of the first buffer layer 20. Therefore, in the embodiment of the present invention, the thickness of the first buffer layer 20 is 10 to 40nm, which can shorten the time for forming the first buffer layer 20, and at the same time, can match the lattice and stress of the substrate layer 10 and the second buffer layer 30, thereby facilitating the formation of the high quality gallium nitride epitaxial layer 40.
In the present embodiment, the second buffer layer 30 includes: the GaN layers 31, BN layers 32 and MgN layers 33 are alternately stacked, and the layers of the second buffer layer 30 contacting the first buffer layer 20 and the gallium nitride epitaxial layer 40 are all GaN layers 31.
Specifically, the second buffer layer 30 is a repeated stack of a GaN layer 31, a BN layer 32, and a MgN layer 33, the GaN layer 31 is formed first, and then the BN layer 32 and the MgN layer 33 are sequentially formed again, so that the second buffer layer 30 is formed. The uppermost and lowermost portions of the second buffer layer 30 are the GaN layers 31, so that the second buffer layer 30 has a better lattice interface, interface defects of the second buffer layer 30, the first buffer layer 20 and the gallium nitride epitaxial layer 40 are reduced, and interface stability is improved. In addition, gaN has good chemical stability, and serves as an interface layer to reduce the progress of chemical reaction and protect the GaN epitaxial layer 40 from the substrate layer 10. On the other hand, the second buffer layer 30 formed by alternately stacking the BN layer 32 and the MgN layer 33 has a lattice constant close to that of the GaN layer 31, and the GaN layer 31, the BN layer 32, and the MgN layer 33 have different thermal expansion coefficients, so that the stress due to the temperature change is offset by alternately stacking the GaN layer 31, the BN layer 32, and the MgN layer 33 with the difference in thermal expansion coefficients therebetween.
In other implementations, since the BN layer is a van der waals material, the BN layer may be replaced with any one of the van der waals materials.
In this embodiment, the thickness of the second buffer layer 30 is 20 to 60nm, and the thicknesses of the GaN layer 31, BN layer 32 and MgN layer 33 are 1 to 4nm.
In this embodiment, the total number of layers of the GaN layer 31, the BN layer 32, and the MgN layer 33 is alternately stacked in a range of 15 to 20 layers.
Referring to fig. 2, the present invention further provides a method for manufacturing a gallium nitride epitaxial structure, which is used for manufacturing the gallium nitride epitaxial structure, and includes the following steps:
step S1, placing a substrate on a base of MOCVD equipment;
step S2, drying the substrate;
Step S3, depositing a first buffer layer on the substrate;
Step S4, depositing a second buffer layer on the first buffer layer;
step S5, growing a gallium nitride epitaxial layer on the second buffer layer;
And S6, introducing nitrogen so that the reaction chamber is reduced to room temperature and discharging.
Compared with the prior art, the manufacturing method of the gallium nitride epitaxial structure provided by the invention has the advantages that the first buffer layer and the second buffer layer are prepared on the substrate to buffer stress generated between the gallium nitride epitaxial layer and the substrate due to lattice mismatch, so that the dislocation density of the gallium nitride epitaxial structure is reduced, and the quality of the generated gallium nitride epitaxial structure is improved.
Referring to fig. 3, the drying process of the substrate includes the following steps:
S21, controlling the temperature of the reaction chamber to be 950-1050 ℃ and the pressure to be 8000-15000 Pa;
and S22, introducing hydrogen to bake the substrate for 5-15 minutes.
In this embodiment, the substrate is placed on the base of the MOCVD equipment, hydrogen baking is performed, the surface of the substrate is cleaned, impurities and oxides are removed, and a clean surface is provided for the subsequent growth of the first buffer layer.
Referring to fig. 4, depositing a first buffer layer on the substrate includes the steps of:
step S31, controlling the pressure and the temperature of the reaction chamber to be unchanged;
and step S32, continuously introducing a nitrogen source into the reaction chamber, and synchronously and alternately introducing an aluminum source and a gallium source so as to form a first buffer layer on the substrate.
Referring to fig. 5, depositing a second buffer layer on the first buffer layer includes the steps of:
s41, controlling the temperature of the reaction chamber to be 750-1200 ℃ and the pressure to be 10000-90000 Pa;
Step S42, continuously introducing a nitrogen source into the reaction chamber, and alternately controlling the introduction of a gallium source, a boron source and a magnesium source so as to deposit the second buffer layer on the first buffer layer.
Referring to fig. 6, the growing of the gan epitaxial layer on the second buffer layer includes the following steps:
step S51, controlling the pressure and the temperature of the reaction chamber to be unchanged;
and step S52, introducing a gallium source and a nitrogen source into the reaction chamber to grow a gallium nitride epitaxial layer.
Compared with the prior art, the gallium nitride epitaxial structure provided by the invention has the advantages that the first buffer layer and the second buffer layer are arranged between the substrate layer and the gallium nitride epitaxial layer, so that the stress generated due to lattice mismatch is reduced, the binding force between the gallium nitride epitaxial layer and the substrate layer is improved, and the quality of the generated gallium nitride epitaxial structure is improved; according to the gallium nitride epitaxial structure manufacturing method, the first buffer layer and the second buffer layer are prepared on the substrate to buffer stress generated between the gallium nitride epitaxial layer and the substrate due to lattice mismatch, so that dislocation density of the gallium nitride epitaxial structure is reduced, and quality of the generated gallium nitride epitaxial structure is improved.
While the invention has been described with reference to certain preferred embodiments, it will be understood by those skilled in the art that various changes and substitutions of equivalents may be made and equivalents will be apparent to those skilled in the art without departing from the scope of the invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (10)
1. A gallium nitride epitaxial structure, comprising: the substrate layer, the first buffer layer, the second buffer layer and the gallium nitride epitaxial layer; the first buffer layer is located above the substrate layer, the second buffer layer is located above the first buffer layer, and the gallium nitride epitaxial layer is located above the second buffer layer.
2. The gallium nitride epitaxial structure of claim 1, wherein the second buffer layer comprises: the GaN layers, the BN layers and the MgN layers are stacked alternately, and the layers of the second buffer layer, the first buffer layer and the gallium nitride epitaxial layer are all GaN layers.
3. The gallium nitride epitaxial structure of claim 2, wherein the second buffer layer has a thickness of 20-60 nm, and the GaN layer, the BN layer, and the MgN layer each have a thickness of 1-4 nm.
4. The gallium nitride epitaxial structure of claim 1, wherein the substrate layer is a silicon substrate, the first buffer layer is an AlGaN buffer layer, and the thickness of the first buffer layer is 10-40 nm.
5. Gallium nitride epitaxial structure according to claim 1, characterized in that the thickness of the gallium nitride epitaxial layer is 1-3.5 μm.
6. A gallium nitride epitaxial structure manufacturing method for manufacturing a gallium nitride epitaxial structure according to any one of claims 1 to 5, comprising the steps of:
Placing the substrate on a base of MOCVD equipment;
Drying the substrate;
Depositing a first buffer layer on the substrate;
depositing a second buffer layer on the first buffer layer;
growing a gallium nitride epitaxial layer on the second buffer layer;
nitrogen was introduced so that the reaction chamber was lowered to room temperature and discharged.
7. The method of manufacturing a gallium nitride epitaxial structure according to claim 6, wherein the drying the substrate comprises the steps of:
controlling the temperature of the reaction chamber to be 950-1050 ℃ and the pressure to be 8000-15000 Pa;
And introducing hydrogen to bake the substrate for 5-15 minutes.
8. A method of fabricating a gallium nitride epitaxial structure according to claim 6, wherein said depositing a first buffer layer on said substrate comprises the steps of:
Controlling the pressure and the temperature of the reaction chamber to be unchanged;
And continuously introducing a nitrogen source into the reaction chamber, and synchronously and alternately introducing an aluminum source and a gallium source so as to form a first buffer layer on the substrate.
9. The method of manufacturing a gallium nitride epitaxial structure of claim 6, wherein depositing a second buffer layer on the first buffer layer comprises:
controlling the temperature of the reaction chamber to be 750-1200 ℃ and the pressure to be 10000-90000 Pa;
and continuously introducing a nitrogen source into the reaction chamber, and alternately controlling the introduction of a gallium source, a boron source and a magnesium source so as to deposit the second buffer layer on the first buffer layer.
10. The method of manufacturing a gallium nitride epitaxial structure according to claim 6, wherein growing a gallium nitride epitaxial layer on the second buffer layer comprises the steps of:
Controlling the pressure and the temperature of the reaction chamber to be unchanged;
and introducing a gallium source and a nitrogen source into the reaction chamber to grow a gallium nitride epitaxial layer.
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| CN1825539A (en) * | 2005-02-22 | 2006-08-30 | 中国科学院半导体研究所 | Method for growing non-crack III family nitride on silicon substrate |
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