CN118157598A - Power amplifier circuit based on parallel resonance unit - Google Patents
Power amplifier circuit based on parallel resonance unit Download PDFInfo
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- CN118157598A CN118157598A CN202410372840.4A CN202410372840A CN118157598A CN 118157598 A CN118157598 A CN 118157598A CN 202410372840 A CN202410372840 A CN 202410372840A CN 118157598 A CN118157598 A CN 118157598A
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/01—Resonant DC/DC converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The application belongs to the technical field of circuits, and particularly relates to a power amplifier circuit based on a parallel resonance unit, which comprises: the power amplifier unit is used for converting the input voltage into a specified waveform; the first resonance unit is electrically connected with the output end of the power amplification unit; the second resonance unit is electrically connected with the output end of the power amplification unit; wherein the first resonant unit comprises a load; the second resonance unit is configured to: a periodic current i ZVS is provided to compensate for fluctuations in the current i p at the power amplifier unit caused by changes in the current i 1 at the load. The application introduces the second resonance unit, and under the action of the input voltage, the second resonance unit generates periodic resonance so as to supplement charge or extract charge to the power amplification unit, thereby weakening or eliminating the influence of the additional charge on the power amplification unit in dead time and realizing soft switching.
Description
Technical Field
The application belongs to the technical field of circuits, and particularly relates to a power amplifier circuit based on a parallel resonance unit.
Background
The high-frequency power amplifier circuit is commonly used for driving a wireless power transmission system and semiconductor processing equipment, and is used for driving a wireless power transmitting end, plasma and the like. Because in these applications, the switching power amplifier section often needs to have the capability of efficient and stable output under widely varying loads.
Under the high-frequency working condition, the parasitic parameter influence of the power device becomes large, the switching loss is increased, and the dead zone control difficulty of the driving signal is increased. When the load changes, it is difficult for a conventional power amplifier, such as a typical class D power amplifier, to implement soft switching over a wide load range, thereby increasing load loss. In order to make the power amplifier always work in a soft switching state in a wide load range, the power amplifier is generally realized by connecting an additional inductor in series with an output end, the inductor enables an equivalent load to present inductance, so that current is delayed from voltage, charges of parallel capacitors at two sides of a switching tube can be extracted in dead time, and finally soft switching is realized.
However, when the frequency is continuously increased, the inductance value is difficult to select under the MHz working condition, the relatively accurate soft switch is difficult to realize, and meanwhile, the current of a main circuit can be increased due to the introduction of reactive power, so that the system efficiency is reduced.
In addition, under the working environment that the load such as wireless power transmission can change, if the inductance value is unchanged, hard switching can appear, and reactive power loss can exceed hard switching loss under other working conditions, and the defect of the traditional mode is more obvious.
Therefore, how to provide a power amplifier circuit with higher system efficiency and adaptive to the load change environment is a technical problem to be solved in the industry.
Disclosure of Invention
The application aims to provide a power amplifier circuit, which aims to solve the problems of low system efficiency and poor variable load adaptability of the traditional power amplifier circuit.
The embodiment of the application provides a power amplifier circuit based on a parallel resonance unit, which is characterized by comprising the following components:
the power amplifier unit is used for converting the input voltage into a specified waveform;
the first resonance unit is electrically connected with the output end of the power amplification unit; and
The second resonance unit is electrically connected with the output end of the power amplification unit;
Wherein the first resonant unit comprises a load; the second resonance unit is configured to: a periodic current i ZVS is provided to compensate for fluctuations in the current i p at the power amplifier unit caused by changes in the current i 1 at the load.
In an alternative embodiment, the current i 1 change at the load comprises: i 1 changes due to load parameter changes within the specified range.
In an alternative embodiment, the power amplifier unit is configured to convert the input dc voltage V dd into a rectangular wave with a magnitude of V dd.
In an alternative embodiment, the power amplifier unit includes:
The input end of the first switching tube is electrically connected with the positive electrode of the V dd; and, a step of, in the first embodiment,
The input end of the second switching tube is electrically connected with the cathode of the V dd;
The output ends of the first switching tube and the second switching tube jointly form the output end of the power amplification unit.
In an alternative embodiment, the first resonant cell includes a first capacitance C T, a first inductance L T, a second capacitance C R, a second inductance L R, and the load R L;
The first capacitor C T and the first inductor L T are connected in series to the output end of the power amplification unit; the first inductor L T and the second inductor L R form a mutual inductance M; the second capacitor C R, the second inductor L R, and the load R L are connected in series.
In an alternative embodiment, the parameters of the first capacitor C T, the first inductor L T, the second capacitor C R, and the second inductor L R satisfy: making DeltaZ eq smaller than a preset value;
Wherein Δz eq is the difference between the upper and lower bounds of the equivalent impedance Z eq of the first resonant unit in the design environment; the design environment includes a preset variable range of the load R L and a preset variable range of the mutual inductance M.
In an alternative embodiment, the second resonant unit is formed by a third capacitor C ZVS and a third inductor L ZVS connected in series.
In an alternative embodiment, the parameters of the third inductance L ZVS satisfy: such that the maximum value of i ZVS is not less than Δi 1;
And delta i 1 is the difference between the upper and lower bounds of i 1 calculated according to the equivalent impedance Z eq range of the first resonance unit and the node voltage of the power amplifier unit.
In an alternative embodiment, the parameters of the third inductance L ZVS and the third capacitance C ZVS satisfy: and the resonance frequency of the second resonance unit is smaller than the working frequency of the power amplifier unit.
Compared with the prior art, the embodiment of the invention has the beneficial effects that: the power amplifier circuit introduces the second resonance unit, and under the action of input voltage, the second resonance unit generates periodic resonance so as to supplement charge or extract charge to the power amplifier unit, thereby weakening or eliminating the influence of the additional charge on the power amplifier unit in dead time and realizing soft switching.
Drawings
Fig. 1 is a schematic diagram of a power amplifier circuit according to an embodiment of the present application;
FIG. 2 is a schematic diagram of an exemplary circuit of a second resonant cell in the power amplifier circuit shown in FIG. 1;
FIG. 3 is a schematic diagram of a wide-load class D power amplifier circuit with a second resonant unit formed by an LC series circuit according to an embodiment of the present application;
FIG. 4 is a schematic diagram of a waveform of the output voltage V SW of the power amplifier of the circuit shown in FIG. 3 in a single period;
FIG. 5 is a schematic diagram of the waveform of the equivalent load current i 1 of the circuit shown in FIG. 3 during a single cycle;
FIG. 6 is a schematic diagram of a waveform of a primary fundamental wave V O1 of the power amplifier output voltage of the circuit shown in FIG. 3 in a single period;
fig. 7 is a schematic waveform diagram of the resonant network output current i ZVS of the circuit shown in fig. 3 in a single cycle.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
It will be understood that when an element is referred to as being "mounted" or "disposed" on another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It is to be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are merely for convenience in describing and simplifying the description based on the orientation or positional relationship shown in the drawings, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus are not to be construed as limiting the application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
The embodiment of the application provides a power amplifier circuit based on a parallel resonance unit, which comprises:
the power amplifier unit is used for converting the input voltage into a specified waveform;
the first resonance unit is electrically connected with the output end of the power amplification unit; and
The second resonance unit is electrically connected with the output end of the power amplification unit;
Wherein the first resonant unit comprises a load; the second resonance unit is configured to: a periodic current i ZVS is provided to compensate for fluctuations in the current i p at the power amplifier unit caused by changes in the current i 1 at the load.
The technical problems solved by this embodiment at least include:
1. and under a high-frequency working condition, especially under a MHz working condition, the system generates reactive power loss for realizing the soft switch.
2. How to always achieve a soft switching state in case of a load change.
As described in the background section, the conventional scheme of introducing inductance at the first resonant unit is poor in adaptation to the high-frequency working condition and the load variable working condition, and meanwhile, loss is generated on the system efficiency.
Under the variable load working condition, unexpected charges possibly generated by the first resonance unit due to load change can be compensated by the second resonance unit with reasonably designed resonance parameters, so that the influence of the second resonance unit on the power amplification unit is reduced or eliminated.
Under the high-frequency working condition, the problem that inductance value is difficult to select in the traditional scheme can be avoided by introducing the second resonance unit, and reasonable resonance of charges at the power amplifier unit (to realize a compensation function) is realized through the second resonance unit with the resonance parameters reasonably designed, so that the soft switch is realized.
Fig. 1 shows a schematic structural diagram of a parallel resonant unit-based power amplifier circuit according to a preferred embodiment of the present application, and for convenience of explanation, only the parts related to the embodiment are shown, which are described in detail below:
In fig. 1, the power amplifier circuit is specifically a wide-load class D power amplifier circuit based on a parallel resonance unit, so as to better demonstrate the advantages of the embodiment, and compared with class E and class F switching power amplifiers, the class D power amplifier has the advantages of small switching tube voltage stress, no output voltage change with load, and the like, and has wide application prospects in medium-power wide-range load applications such as wireless power transmission technology, and the like, and is selected as an example.
It should be noted that this does not limit the protection scope of the present application, and as described above, the core of the power amplifier circuit provided in the embodiment of the present application is the compensation charge provided by the second resonant unit.
As shown in fig. 1, the wide-load class-D power amplifier circuit based on the parallel resonance unit includes a class-D power amplifier link (i.e., a specific circuit structure of the power amplifier unit), a parallel resonance unit link (i.e., a specific circuit structure of the second resonance unit), and a series filter unit (i.e., a specific circuit structure of the first resonance unit).
In practical application, the equivalent load R L varies within a certain range, and in the switching states such as duty ratio, the output voltage is a constant rectangular wave (a load current i 1 also varies with the variation of R L) without changing the switching frequency of S1 and S2 (because two switching tubes with identical structures can be selected for the two switching tubes in each drawing of the present application are denoted as S1, in practical application, different switching tubes S1 and S2 can be selected, or the same switching tube can be selected and understood as S1 and S2 in the form of serial number distinction).
Thus, in an alternative embodiment, the current i 1 change at the load comprises: i 1 changes due to load parameter changes within the specified range.
Further, in the circuit shown in fig. 1, the class D power amplifier portion is composed of two switching tubes S1 and S2 that work complementarily, and the input dc voltage V dd is converted into a rectangular wave with the amplitude of V dd by using the complementary working characteristics thereof, and the duty ratio of the rectangular wave is equal to the duty ratio of the driving signal of the switching tube S1.
That is, in an alternative embodiment, the power amplifying unit is configured to convert the input dc voltage V dd into a rectangular wave with a magnitude of V dd.
In another optional embodiment, the power amplifier unit includes:
The input end of the first switching tube is electrically connected with the positive electrode of the V dd; and, a step of, in the first embodiment,
The input end of the second switching tube is electrically connected with the cathode of the V dd;
The output ends of the first switching tube and the second switching tube jointly form the output end of the power amplification unit.
Further, in the circuit shown in fig. 1, the series filtering unit is composed of an inductance Ls and a capacitance Cs, which form series resonance at the switching frequency, and present high impedance to other frequency signals, and the load current i 1 is a switching frequency sine wave under the condition that the filtering capability is high enough.
The parallel resonance unit link is shown in fig. 2, and the parallel resonance unit in the circuit can be formed by a second-order or third-order resonance cavity formed by inductance and capacitance, and the resonance cavity needs to have a smaller time constant so as to output periodic current along with the on/off of a lower tube of the circuit, and meanwhile, the resonance cavity can not influence the normal operation of a subsequent circuit.
For the circuit shown in fig. 1, when no parallel resonant unit is applied, the load current i 1 is equal to the current i p flowing into the switch node, so that the current for providing the charging and discharging of the output capacitor of the switch tube in the dead zone range of S1 and S2 is equal to the load current i 1, and the soft and hard on state of the switch tube changes along with the change of the load current i 1. After the parallel resonance unit is added, the switch node current i p is composed of the load current i 1 and the parallel resonance unit current i ZVS, the parallel resonance unit i ZVS can compensate the change of the switch node current i p caused by the change of the load current through reasonably designing parameters of the parallel resonance unit, and in one switching period, the periodic current i ZVS provided by the resonance unit charges or extracts charges to the equivalent output capacitor of the switching tube, so that the switching charges are evacuated before the dead time is finished, and further soft switching is realized.
The preferred embodiment of the present application will be described more specifically by taking an LC series loop as an example of the second resonant unit, and referring to the radio energy transmission circuit under the following S-S compensation shown in fig. 3:
In an alternative embodiment, the first resonant cell includes a first capacitance C T, a first inductance L T, a second capacitance C R, a second inductance L R, and the load R L;
The first capacitor C T and the first inductor L T are connected in series to the output end of the power amplification unit; the first inductor L T and the second inductor L R form a mutual inductance M; the second capacitor C R, the second inductor L R, and the load R L are connected in series.
In another alternative embodiment, the second resonant unit is formed by a third capacitor C ZVS and a third inductor L ZVS connected in series.
The circuit of fig. 3 will be described in more detail with respect to parameter design. The circuit is suitable for a fundamental wave analysis method, S1 and S2 in the diagram are switching tubes, equivalent impedance of a circuit at the rear end of a resonant network is Z eq, switching working frequency is f, V dd is input direct-current voltage, L ZVS and C ZVS form a resonant network branch, and the resonant frequency of the resonant network branch is far smaller than the working frequency f so that C ZVS is large enough, and terminal voltage of the resonant network branch is equal to half of input voltage.
Thus, in an alternative embodiment, the parameters of the third inductance L ZVS and the third capacitance C ZVS satisfy: and the resonance frequency of the second resonance unit is smaller than the working frequency of the power amplifier unit.
FIG. 4 is a waveform of the voltage and current of the circuit in one period, when i 1=I1 sin (2pi.f.t+β) is setAt (Δt is dead time), the resonant cell current i ZVS is calculated as:
according to kirchhoff's current law, the expression of i p can be calculated to satisfy:
The class D power amplifier is subjected to phase inversion in dead time, and i p is used for providing charge and discharge charge for the S1 and S2 output capacitors, so that the charge and discharge charge can be calculated as follows:
when Z eq is purely resistive, the charge provided by i 1 is 0 in dead time, the resonant unit provides all charges for charging and discharging the switch capacitor, the change of resistive load does not affect the range for realizing efficient operation, and the charge and discharge charges should satisfy the relationship:
QCoss≤QL (4)
the simultaneous expressions (2), (3) and (4) can be calculated to obtain L ZVS to satisfy the following conditions:
When the frequency changes or the coil shifts, Z eq is not purely resistive, the dead time i 1 also provides or absorbs charge, so the total charge of the ZVS leg and load is:
the total charge required for switching the switching tube is:
Qtotal=VDD(Coss1+Coss2+Cwell) (7)
wherein C well is the well capacitance of the driving chip, and the capacitance is not needed when resonance driving is adopted. From (6) and (7), the expression L ZVS can be solved, and from (8), L ZVS is related to the magnitude and phase of the load impedance, dead time, input voltage and operating frequency.
By designing the relevant parameters of the resonance unit, the high-efficiency work of the power amplifier can be realized in a wider load range.
More specifically, in practical applications, the variable parameters mainly include a load R L and a mutual inductance M, where the change of the two parameters can be represented by its equivalent impedance Z eq, i.e. the impedance reflected to the switching node. The programmable parameter is L ZVS,LT,LR,CT,CR.
The design logic of the parameters is as follows:
1. Firstly, designing L T,LR,CT,CR according to the variation ranges of R L and M, and compressing the variation range of Z eq as much as possible; that is, in an alternative embodiment, the parameters of the first capacitance C T, the first inductance L T, the second capacitance C R, and the second inductance L R satisfy: making DeltaZ eq smaller than a preset value;
Wherein Δz eq is the difference between the upper and lower bounds of the equivalent impedance Z eq of the first resonant unit in the design environment; the design environment includes a preset variable range of the load R L and a preset variable range of the mutual inductance M.
2. Deriving the load current i 1 from the range of variation of Z eq and the range of variation of the D-class switching node voltage, determining a ZVS inductance value L ZVS_MAX by determining the maximum current value required to be output by the ZVS circuit (second resonant unit), and ensuring that the ZVS circuit inductance value is smaller than L ZVS_MAX is only required to achieve soft-on in the load target range, i.e. in an alternative embodiment, the parameters of the third inductance L ZVS satisfy: such that the maximum value of i ZVS is not less than Δi 1;
And delta i 1 is the difference between the upper and lower bounds of i 1 calculated according to the equivalent impedance Z eq range of the first resonance unit and the node voltage of the power amplifier unit.
Noteworthy are: in practical applications, dead time is also an important design parameter, and the dead time is also related to the deduction process of the invention, so that the dead time design based on the structure provided by the invention is also within the protection scope of the invention.
In general, embodiments of the present application provide a passive circuit structure based on parallel resonant cells that can achieve soft switching of switching tubes over a wide range of load variations without any additional control strategy. The parallel resonant cells are not limited to the exemplary LC series form, but may be LC parallel and LCC series-parallel forms.
The parameter design method of the circuit structure, including the parallel resonance unit parameter design and the design method of the class D (or other class) power amplifier dead time are also key in the application.
The beneficial effects of the embodiments of the application include:
1. through the parallel resonance network (for example, two ends of a lower tube of a traditional D-type power amplifier are connected in parallel), the effect of realizing soft switching in a wider load range is realized, the power density can be better increased, the heat dissipation cost of the power amplifier is reduced, and the economical efficiency of related equipment is improved.
2. The parallel resonance unit can be used as a high-frequency filtering unit, so that the influence of stray harmonic waves on a switching tube is reduced, the system loss is reduced, meanwhile, the volume of the series filtering unit can be reduced, the system cost is further reduced, and the system power density is improved.
3. The method is suitable for different load and different frequency scenes, and particularly has higher universality in the aspects of wireless power transmission, communication and the like.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-described division of the functional units and modules is illustrated, and in practical application, the above-described functional distribution may be performed by different functional units and modules according to needs, i.e. the internal structure of the apparatus is divided into different functional units or modules to perform all or part of the above-described functions. The functional units and modules in the embodiment may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit, where the integrated units may be implemented in a form of hardware or a form of a software functional unit. In addition, the specific names of the functional units and modules are only for distinguishing from each other, and are not used for limiting the protection scope of the present application. The specific working process of the units and modules in the above system may refer to the corresponding process in the foregoing method embodiment, which is not described herein again.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and in part, not described or illustrated in any particular embodiment, reference is made to the related descriptions of other embodiments.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus/terminal device and method may be implemented in other manners. For example, the apparatus/terminal device embodiments described above are merely illustrative, e.g., the division of the modules or units is merely a logical function division, and there may be additional divisions in actual implementation, e.g., multiple units or components may be combined or integrated into another system, or some features may be omitted or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection via interfaces, devices or units, which may be in electrical, mechanical or other forms.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional unit in the embodiments of the present application may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in software functional units.
The integrated modules/units, if implemented in the form of software functional units and sold or used as stand-alone products, may be stored in a computer readable storage medium. Based on such understanding, the present application may implement all or part of the flow of the method of the above embodiment, or may be implemented by a computer program to instruct related hardware, where the computer program may be stored in a computer readable storage medium, and when the computer program is executed by a processor, the computer program may implement the steps of each of the method embodiments described above. . Wherein the computer program comprises computer program code which may be in source code form, object code form, executable file or some intermediate form etc. The computer readable medium may include: any entity or device capable of carrying the computer program code, a recording medium, a U disk, a removable hard disk, a magnetic disk, an optical disk, a computer memory, a Read-only memory (ROM), a random access memory (RAM, random Access Memory), an electrical carrier signal, a telecommunications signal, a software distribution medium, and so forth. It should be noted that the computer readable medium contains content that can be appropriately scaled according to the requirements of jurisdictions in which such content is subject to legislation and patent practice, such as in certain jurisdictions in which such content is subject to legislation and patent practice, the computer readable medium does not include electrical carrier signals and telecommunication signals.
The above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application, and are intended to be included in the scope of the present application.
Claims (9)
1. A parallel resonant cell based power amplifier circuit, comprising:
the power amplifier unit is used for converting the input voltage into a specified waveform;
the first resonance unit is electrically connected with the output end of the power amplification unit; and
The second resonance unit is electrically connected with the output end of the power amplification unit;
Wherein the first resonant unit comprises a load; the second resonance unit is configured to: a periodic current i ZVS is provided to compensate for fluctuations in the current i p at the power amplifier unit caused by changes in the current i 1 at the load.
2. The parallel resonant cell based power amplifier circuit of claim 1, wherein the current i 1 at the load varies comprising: i 1 changes due to load parameter changes within the specified range.
3. The parallel resonant cell-based power amplifier circuit of claim 1, wherein the power amplifier cell is configured to convert an input dc voltage V dd into a rectangular wave having an amplitude V dd.
4. A parallel resonant cell based power amplifier circuit as recited in claim 3, wherein the power amplifier cell comprises:
The input end of the first switching tube is electrically connected with the positive electrode of the V dd; and, a step of, in the first embodiment,
The input end of the second switching tube is electrically connected with the cathode of the V dd;
The output ends of the first switching tube and the second switching tube jointly form the output end of the power amplification unit.
5. The parallel resonant cell based power amplifier circuit of claim 1, wherein the first resonant cell comprises a first capacitance C T, a first inductance L T, a second capacitance C R, a second inductance L R, and the load R L;
The first capacitor C T and the first inductor L T are connected in series to the output end of the power amplification unit; the first inductor L T and the second inductor L R form a mutual inductance M; the second capacitor C R, the second inductor L R, and the load R L are connected in series.
6. The parallel resonant cell based power amplifier circuit of claim 5, wherein the parameters of the first capacitor C T, the first inductor L T, the second capacitor C R, and the second inductor L R satisfy: making DeltaZ eq smaller than a preset value;
Wherein Δz eq is the difference between the upper and lower bounds of the equivalent impedance Z eq of the first resonant unit in the design environment; the design environment includes a preset variable range of the load R L and a preset variable range of the mutual inductance M.
7. The parallel resonant cell-based power amplifier circuit of claim 1, wherein the second resonant cell is comprised of a third capacitor C ZVS and a third inductor L ZVS in series.
8. The parallel resonant cell based power amplifier circuit of claim 7, wherein the parameters of the third inductance L ZVS satisfy: such that the maximum value of i ZVS is not less than Δi 1;
And delta i 1 is the difference between the upper and lower bounds of i 1 calculated according to the equivalent impedance Z eq range of the first resonance unit and the node voltage of the power amplifier unit.
9. The parallel resonant cell based power amplifier circuit of claim 8, wherein parameters of the third inductance L ZVS and the third capacitance C ZVS satisfy: and the resonance frequency of the second resonance unit is smaller than the working frequency of the power amplifier unit.
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