CN118156756A - Airtight waveguide-microstrip switching structure based on multilayer HTCC - Google Patents
Airtight waveguide-microstrip switching structure based on multilayer HTCC Download PDFInfo
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- CN118156756A CN118156756A CN202410246750.0A CN202410246750A CN118156756A CN 118156756 A CN118156756 A CN 118156756A CN 202410246750 A CN202410246750 A CN 202410246750A CN 118156756 A CN118156756 A CN 118156756A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
- H01P5/107—Hollow-waveguide/strip-line transitions
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Abstract
The invention belongs to the technical field of microwave devices, and particularly relates to an airtight waveguide-microstrip switching structure based on a multilayer HTCC, which comprises the following components: the top metal plate is provided with two symmetrically arranged top metal plate grooves, a second communication groove is arranged between the two top metal plate grooves, and coplanar waveguide coupling parts are arranged in the second communication groove and the two top metal plate grooves; the top of the top metal plate is fixedly connected with a surface vacuum cavity, and the surface vacuum cavity covers the second communication slot and the two top metal plate slots; the bottom of the top metal plate is fixedly connected with the top end of the medium transmission assembly, and the bottom ends of the medium transmission assembly are respectively fixedly connected with two symmetrically arranged standard W-band waveguides; the inner side of the surface vacuum cavity is provided with a first shielding part, and the outer side of the surface vacuum cavity is provided with a second shielding part. Through the arrangement of the surface vacuum cavity, oxidation of a transition structure rear-stage circuit of the coplanar waveguide coupling part is avoided, the service cycle is prolonged, and the loss is reduced.
Description
Technical Field
The invention belongs to the technical field of microwave devices, and particularly relates to an airtight waveguide-microstrip switching structure based on a multilayer HTCC.
Background
The microwave (Mcrowave) is an electromagnetic wave with the frequency ranging from 300MHz to 300GHz (the wavelength is 1mm to 1 m), and the frequency range is between the FM broadcasting radio and the far infrared. Because of the special position, the microwave has the advantages of wide available frequency band, energy carrying, information transmission, good penetrability and the like, and also has a series of special properties of electromagnetic radiation and electromagnetic compatibility, so that the microwave has great scientific value and wide application prospect in the military fields of radar monitoring, environment monitoring, radio astronomy, broadband mobile communication and the like.
Since the analysis of microwaves needs to follow the theory of distribution parameters, it is extremely sensitive to environmental dimensions, and it is extremely important to reduce the loss of microwaves generated during transmission. The W wave band (75 GHz-110 GHz) is a common wave band in the microwave technology, because the wave guiding system in the W wave band mostly adopts metal wave guide, and in the technology of radio frequency chip packaging and the like in the W wave band, microstrip lines are required to be used as wave guiding systems, and benign interconnection cannot be directly formed with the traditional wave guiding system in the W wave band-metal wave guide. It is therefore desirable to achieve waveguide and chip energy conversion, i.e. to conduct chip-to-waveguide energy transition studies.
In the prior art, a short-circuit surface structure is mostly adopted, so that the overall three-dimensional size is larger, air in a waveguide is not isolated from a post-stage circuit of the transition structure, the post-stage circuit is extremely easy to oxidize, the service period is shortened, the loss is increased, and the like, and therefore, the problem of the airtight waveguide-microstrip switching structure based on the multilayer HTCC is needed to be solved.
Disclosure of Invention
The invention aims to provide a multi-layer HTCC-based airtight waveguide-microstrip switching structure so as to solve the problems.
In order to achieve the above object, the present invention provides the following solutions:
a multi-layer HTCC based hermetic waveguide-microstrip transition structure comprising: the top metal plate is provided with two symmetrically arranged top metal plate grooves, a second communication groove is formed between the two top metal plate grooves, two ends of the second communication groove are respectively communicated with the corresponding top metal plate grooves, and coplanar waveguide coupling parts are arranged in the second communication groove and the two top metal plate grooves;
The top of the top metal plate is fixedly connected with a surface vacuum cavity, and the surface vacuum cavity covers the second communication slot and the two top metal plate slots;
the bottom of the top metal plate is fixedly connected with the top end of the medium transmission assembly, and the bottom ends of the medium transmission assembly are respectively fixedly connected with two symmetrically arranged standard W-band waveguides;
a first shielding part and a second shielding part are arranged below the second communication slot, the first shielding part is positioned in the second communication slot projection area, and the second shielding part is positioned outside the second communication slot projection area.
Preferably, the coplanar waveguide coupling part comprises a microstrip line, the microstrip line is arranged in the second communication slot, a gap is reserved between the edge of the microstrip line and the inner wall of the second communication slot, two ends of the microstrip line are respectively fixedly connected with one end of a coplanar waveguide, the other end of the coplanar waveguide extends into the corresponding slot of the top metal plate, one end of the coplanar waveguide, which is far away from the microstrip line, is fixedly connected with an on-board coupling piece, the on-board coupling piece is coaxially arranged in the slot of the top metal plate, and a gap is reserved between the edge of the on-board coupling piece and the inner wall of the slot of the top metal plate;
The top metal plate, the microstrip line, the coplanar waveguide and the on-board coupling piece are positioned in the same plane, and the microstrip line, the coplanar waveguide and the on-board coupling piece are fixedly connected with the top of the medium transmission assembly.
Preferably, the medium transmission assembly comprises a plurality of HTTC medium plates, an intermediate metal plate is arranged between two adjacent HTTC medium plates, the intermediate metal plate is fixedly connected with the HTTC medium plates, the top of the HTTC medium plate positioned on the top surface is fixedly connected with the bottom of the top metal plate, the bottom of the HTTC medium plate positioned on the bottom surface is fixedly connected with a bottom coupling part, and the tops of the two standard W-band waveguides are fixedly connected with the bottom of the bottom coupling part;
and the microstrip line and the on-board coupling piece are fixedly connected with the top of the HTTC dielectric plate positioned at the top.
Preferably, the bottom coupling part comprises a bottom metal plate, the top of the bottom metal plate is fixedly connected with the bottom of the HTTC dielectric plate at the bottom, two bottom metal plate grooves are symmetrically formed in the bottom metal plate, the two bottom metal plate grooves are in one-to-one correspondence with the two standard W wave band waveguides, the top of the standard W wave band waveguides is fixedly connected with the bottom of the bottom metal plate, a plate bottom coupling piece is arranged in the middle of the inner side of the bottom metal plate groove, a shielding piece is fixedly connected with the inner wall of the bottom metal plate groove, and the plate bottom coupling piece is fixedly connected with the bottom of the HTTC dielectric plate at the bottom.
Preferably, the first shielding portion includes a plurality of internal metallized through holes, the plurality of internal metallized through holes are distributed in a matrix in a projection area of the second communication slot, the internal metallized through holes penetrate through a plurality of HTTC dielectric plates and a plurality of intermediate metal plates below a first layer, the top of the internal metallized through holes are in contact with the bottom of the top metal plate, and the bottom of the internal metallized through holes are in contact with the top of the bottom metal plate.
Preferably, the second shielding portion includes a plurality of external metallization via holes, a plurality of external metallization via holes are uniformly distributed along the outer side of the projection area of the second communication slot, the external metallization via holes penetrate through a plurality of HTTC dielectric plates and a plurality of intermediate metal plates, the top of each external metallization via hole is in contact with the bottom of the top metal plate, and the bottom of each external metallization via hole is in contact with the top of the bottom metal plate.
Preferably, two symmetrically arranged through slots are formed in the middle metal plate, and the through slots are correspondingly arranged at the top of the standard W-band waveguide.
Preferably, at least one of the plurality of middle metal plates positioned above is provided with a first communication slot, the first communication slot is positioned between the two corresponding through slots, the first communication slot is positioned under the second communication slot, and the end parts of the first communication slot are respectively communicated with the corresponding through slots;
The internal metalized via holes penetrate through the HTTC dielectric plates and the intermediate metal plates which are positioned below the first intermediate metal plate without the first communication slot.
Compared with the prior art, the invention has the following advantages and technical effects:
When the microwave transmission device is used, the standard W-band waveguide is in contact with the medium transmission component, one standard W-band waveguide is used for microwave input, the other standard W-band waveguide is used for microwave output, the medium transmission component is used for transmission, the energy coupling between the metal waveguide-coplanar waveguide coupling part and the coplanar waveguide coupling part-metal waveguide is realized through the coplanar waveguide coupling part, and the coplanar waveguide coupling part is arranged in the surface vacuum cavity, so that air in the medium transmission component is isolated from the coplanar waveguide coupling part, the oxidation of a transition structure rear-stage circuit of the coplanar waveguide coupling part is avoided, the service period is prolonged, and the loss is reduced.
Drawings
For a clearer description of an embodiment of the invention or of the solutions of the prior art, the drawings that are needed in the embodiment will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art:
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic view of a top sheet metal structure of the present invention;
FIG. 3 is an enlarged view of a portion of FIG. 2A in accordance with the present invention;
FIG. 4 is a schematic diagram of an HTTC dielectric plate structure according to the present invention;
FIG. 5 is a schematic view of an upper middle metal plate structure according to the present invention;
FIG. 6 is a schematic view of a bottom sheet metal structure of the present invention;
FIG. 7 is a schematic view of a first open channel structure of an upper middle metal plate according to the present invention;
FIG. 8 is a schematic diagram of an internal metallization via structure according to the present invention;
FIG. 9 is a schematic cross-sectional view of each intermediate metal plate and each HTTC dielectric plate according to the present invention;
FIG. 10 is a graph showing simulation results of S11 and S21 in the W-band of the present invention;
1, a standard W-band waveguide; 2. a surface vacuum chamber; 3. a top metal plate; 4. a microstrip line; 5. an on-board coupling tab; 6. HTTC media plates; 7. an external metallized via; 8. a first communication slot; 9. an intermediate metal plate; 10. a plate bottom coupling piece; 12. an internally metallized via; 13. a through slot; 14. a bottom metal plate; 15. a shielding sheet; 16. grooving the top metal plate; 17. a second communicating slot; 18. slotting the bottom metal plate; 19. coplanar waveguides.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Referring to fig. 1 to 10, the present invention discloses a multi-layer HTCC-based hermetic waveguide-microstrip switching structure, comprising: the top metal plate 3 is provided with two top metal plate grooves 16 which are symmetrically arranged, a second communication groove 17 is arranged between the two top metal plate grooves 16, two ends of the second communication groove 17 are respectively communicated with the corresponding top metal plate grooves 16, and coplanar waveguide coupling parts are arranged in the second communication groove 17 and the two top metal plate grooves 16;
the top of the top metal plate 3 is fixedly connected with a surface vacuum cavity 2, and the surface vacuum cavity 2 is arranged to cover a second communication slot 17 and two top metal plate slots 16;
the bottom of the top metal plate 3 is fixedly connected with the top end of a medium transmission assembly, and the bottom ends of the medium transmission assembly are respectively fixedly connected with two symmetrically arranged standard W-band waveguides 1;
A first shielding part and a second shielding part are arranged below the second communication slot 17, the first shielding part is positioned in the projection area of the second communication slot 17, and the second shielding part is positioned outside the projection area of the second communication slot 17.
When the microwave oven is used, the standard W-band waveguide 1 is in contact with a medium transmission component, one standard W-band waveguide 1 is used for microwave input, the other standard W-band waveguide 1 is used for microwave output, the medium transmission component is used for transmission, the energy coupling between the metal waveguide-coplanar waveguide coupling part and the coplanar waveguide coupling part-metal waveguide is realized through the coplanar waveguide coupling part, and the coplanar waveguide coupling part is arranged in the surface vacuum cavity 2, so that air in the medium transmission component is isolated from the coplanar waveguide coupling part, the oxidation of a transition structure rear-stage circuit of the coplanar waveguide coupling part is avoided, the service period is prolonged, and the loss is reduced.
In a further optimization scheme, the coplanar waveguide coupling part comprises a microstrip line 4, the microstrip line 4 is arranged in a second communication slot 17, a gap is reserved between the edge of the microstrip line 4 and the inner wall of the second communication slot 17, two ends of the microstrip line 4 are fixedly connected with one end of a coplanar waveguide 19 respectively, the other end of the coplanar waveguide 19 extends into a corresponding top metal plate slot 16, one end of the coplanar waveguide 19, which is far away from the microstrip line 4, is fixedly connected with an on-board coupling piece 5, the on-board coupling piece 5 is coaxially arranged in the top metal plate slot 16, and a gap is reserved between the edge of the on-board coupling piece 5 and the inner wall of the top metal plate slot 16;
The top metal plate 3, the microstrip line 4, the coplanar waveguide 19 and the on-board coupling piece 5 are positioned in the same plane, and the microstrip line 4, the coplanar waveguide 19 and the on-board coupling piece 5 are fixedly connected with the top of the medium transmission assembly.
In a further optimization scheme, the medium transmission assembly comprises a plurality of HTTC medium plates 6, an intermediate metal plate 9 is arranged between two adjacent HTTC medium plates 6, the intermediate metal plate 9 is fixedly connected with the HTTC medium plates 6, the top of the HTTC medium plate 6 positioned on the top surface is fixedly connected with the bottom of the top metal plate 3, the bottom of the HTTC medium plate 6 positioned on the bottom surface is fixedly connected with a bottom coupling part, and the tops of two standard W wave band waveguides 1 are fixedly connected to the bottom of the bottom coupling part;
The microstrip line 4 and the on-board coupling piece 5 are fixedly connected with the top of the HTTC dielectric plate 6 positioned on the top.
Further optimizing scheme, bottom coupling portion includes bottom metal sheet 14, bottom metal sheet 14's top and the HTTC medium board 6 bottom rigid coupling that is located the bottom, two bottom metal sheet flutings 18 have been seted up to the symmetry on the bottom metal sheet 14, two bottom metal sheet flutings 18 and two standard W wave band waveguide 1 one-to-one, standard W wave band waveguide 1 top and bottom metal sheet 14 bottom rigid coupling, bottom metal sheet fluting 18 inboard middle part is equipped with board bottom coupling piece 10, bottom metal sheet fluting 18 inner wall rigid coupling has shielding piece 15, board bottom coupling piece 10 and the bottom rigid coupling that is located the HTTC medium board 6 of bottom.
Further optimizing scheme, the first shielding part comprises a plurality of internal metallization via holes 12, the internal metallization via holes 12 are distributed in a matrix in the projection area of the second communication slot 17, the internal metallization via holes 12 penetrate through a plurality of HTTC dielectric plates 6 and a plurality of intermediate metal plates 9 below the first layer, the top of the internal metallization via holes 12 are in contact with the bottom of the top metal plate 3, and the bottom of the internal metallization via holes 12 are in contact with the top of the bottom metal plate 14.
Further optimizing scheme, the second shielding part includes a plurality of outside metallization via holes 7, and a plurality of outside metallization via holes 7 evenly distributed along the projection area outside of second intercommunication fluting 17, and outside metallization via holes 7 run through a plurality of HTTC dielectric plates 6 and a plurality of intermediate metal plates 9 and set up, and outside metallization via holes 7's top and top metal plate 3 bottom contact setting, outside metallization via holes 7's bottom and bottom metal plate 14 top contact setting.
In a further optimized scheme, two symmetrically arranged through slots 13 are formed in the middle metal plate 9, and the through slots 13 are correspondingly arranged on the top of the standard W-band waveguide 1.
The invention comprises a transition structure formed by a top metal plate 3, a bottom metal plate 14, a plurality of HTTC dielectric plates 6 and a plurality of middle metal plates 9, wherein an on-board coupling sheet 5 and an on-board coupling sheet 10 are respectively arranged on the upper plane and the lower plane of the transition structure, the on-board coupling sheet 5 is used for being connected with a microstrip structure, and the on-board coupling sheet 10 is used for being connected with the rear end of a standard W wave band waveguide 1.
In the on-chip integrated waveguide-microstrip transition structure provided in the embodiment of the present invention, the on-chip integrated waveguide-microstrip transition structure includes a plate bottom coupling piece 10, an on-board coupling piece 5, a coplanar waveguide 19, a microstrip line 4, another coplanar waveguide 19, another on-board coupling piece 5, and another plate bottom coupling piece 10, which are sequentially connected from one end to the other end.
The number of inner metallized vias 12 and the number of outer metallized vias 7 form an electromagnetic shielding region.
The microstrip transition structure is influenced by the top layer coupling matching structure, and a microstrip structure with larger width is adopted, so that electromagnetic radiation in a W wave band is not negligible, and an internal metallized via hole 12 is added near the microstrip line 4, so that electromagnetic energy radiation of the microstrip line 4 is reduced, and meanwhile, the internal metallized via hole 12 does not penetrate through the top metal plate 3, and the sealing of the surface vacuum cavity 2 is ensured.
For convenience of testing, the embodiment is a symmetrical structure, and from the surface layer, the single transition structure is composed of a plate bottom coupling sheet 10, an on-plate coupling sheet 5, a plurality of HTTC dielectric plates 6 between the plate bottom coupling sheet 10 and the on-plate coupling sheet 5, an intermediate metal plate 9 between the two HTTC dielectric plates 6, a plurality of inner metallized through holes 12 arranged in the range of the surface vacuum cavity 2, a plurality of outer metallized through holes 7 arranged outside the range of the surface vacuum cavity 2, a coplanar waveguide 19 and a microstrip line 4.
The back-to-back structure is obtained by mirroring the single transition structure, and the waveguide-microstrip transition structure of the back-to-back structure is jointly realized.
In addition, the standard W-band waveguide 1 does not extend into the HTTC dielectric plates 6, but is pre-arranged on the lower surface of the HTTC dielectric plate 6 at the bottom, and a semi-closed field is formed by cutting a proper closed surface through a conductor surface and the waveguide wall, so that electromagnetic energy is prevented from leaking from an interface, and electromagnetic energy can be better concentrated by arranging the shielding sheet 15.
The geometric center of the plate bottom coupling piece 10 is positioned at the center of the cross section of the standard W-band waveguide 1, and is directly coupled with electromagnetic energy in the standard W-band waveguide 1 through air; the geometric center of the coupling piece 5 on the board is also positioned at the center of the cross section of the standard W-band waveguide 1, electromagnetic energy in the standard W-band waveguide 1 and electromagnetic energy of the coupling piece 10 on the board are coupled to the coupling piece 5 on the board through a plurality of HTTC dielectric boards 6, the electromagnetic energy can be prevented from leaking from a gap at the top of the HTTC dielectric board 6 as far as possible by adjusting the distance between the top metal board 3 and the coupling piece 5 on the board, the length and the width of the coupling piece 10 on the board and the coupling piece 5 on the board can be adjusted, and the energy coupling efficiency can be adjusted.
In a further optimization scheme, at least one of the plurality of middle metal plates 9 positioned above is provided with a first communication slot 8, the first communication slot 8 is positioned between the two corresponding through slots 13, the first communication slot 8 is positioned under the second communication slot 17, and the end parts of the first communication slots 8 are respectively communicated with the corresponding through slots 13;
The internal metallized vias 12 extend through the several HTTC dielectric plates 6 and the several intermediate metal plates 9 below the first intermediate metal plate 9 not provided with the first communication slot 8.
The middle part of the middle metal plate 9 positioned at the top is provided with a first communication slot 8, the microwave loss of microwaves from the coplanar waveguide 19 to the microstrip line 4 is minimized through the arrangement of the first communication slot 8, and the minimum transition line loss is realized through adjusting the slot width around the microstrip line 4 by referring to the curve S (2, 1) in fig. 10, and can be obtained through simulation scanning.
As shown in fig. 10, a simulation result diagram of S11 and S21 when applied to the W band according to a preferred embodiment of the present invention is shown, from which:
The electromagnetic energy center frequency point determined by the standard W-band waveguide 1, the coplanar waveguide 19 and the microstrip line 4 is obtained by respectively adjusting the proper line width W of the microstrip line 4 and the distance between the center conduction band of the coplanar waveguide 19 and the grounding layer of the coplanar waveguide 19, the side lengths of the on-board coupling piece 5 and the on-board coupling piece 10 and the distance between the on-board coupling piece 5 and the metal surface, the electromagnetic energy coupling of the W-band standard waveguide with wider actual bandwidth and the microstrip line 4 can be realized in the W-band, finally, the electromagnetic energy coupling is obtained by optimizing and referring to the HTCC process, the line width W of the microstrip line 4 is 0.1mm, the distance between the center conduction band of the coplanar waveguide 19 (namely the edge of the microstrip line 4) and the grounding layer of the coplanar waveguide 19 (namely the edge of the communication position of the top metal plate slot 16 and the second communication slot 17) is 0.097mm, the length of the coupling sheet 5 on the board is 0.62mm, the width is 0.48mm, the length of the coupling sheet 10 on the board bottom is 1.16mm, the width is 0.15mm, the distance m between the coupling sheet 5 on the board and the top metal plate 3 is 0.12mm, the outer metallized through holes 7 and the inner metallized through holes 12 are tapered with the front diameter of 70um and the back diameter of 62um, the total thickness of the transition structure (comprising the top metal plate 3, the bottom metal plate 14, a plurality of HTTC dielectric plates 6 and a plurality of middle metal plates 9) is 0.49mm, the thicknesses of the top metal plate 3, the bottom metal plate 14 and the middle metal plates 9 are all 0.01mm, the total number of the top metal plate 3, the bottom metal plate 14 and the plurality of middle metal plates 9 is nine, and the thickness of the single-layer HTTC dielectric plates 6 is 0.05mm.
According to the analysis and the optimization data, a simulation result is obtained: in the frequency range of 90.57-96.25 GHz, the echo is better than 15dB, the insertion loss is better than 5dB, and the common unidirectional transition only considers the single-side transition, and the back-to-back structure is not needed to be considered, namely, the loss and the echo of the actual single-side structure can be further optimized. The invention can be applied to the field of W-band microwave chip packaging, and has the characteristics of low loss, low echo, simple structure and convenient processing.
The invention has the beneficial effects that:
1. The transition from the microstrip line 4 to the standard microwave waveguide is realized by adopting the waveguide-microstrip coupling transition structure, and the microstrip line can be applied to the field of microwave chip packaging and has the advantages of low loss, wide frequency band, high transition efficiency, simple structure and convenient processing;
2. The HTCC is used as a medium for isolating the air in the vacuum cavity and the waveguide, so that the key problems of low air tightness and short service life of the traditional short-circuit surface structure are solved;
3. The novel HTCC coupling structure is adopted, the coupling between parallel surfaces is utilized, the shielding of the metallized through holes and the conductor plane is utilized, electromagnetic energy in the waveguide is efficiently transferred into the later-stage microstrip circuit, the problem of large three-dimensional volume existing in the traditional short-circuit surface structure is solved, and the reference is provided for the field of microwave chip packaging to realize small volume and high density.
In the description of the present invention, it should be understood that the terms "longitudinal," "transverse," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate description of the present invention, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present invention.
The above embodiments are only illustrative of the preferred embodiments of the present invention and are not intended to limit the scope of the present invention, and various modifications and improvements made by those skilled in the art to the technical solutions of the present invention should fall within the protection scope defined by the claims of the present invention without departing from the design spirit of the present invention.
Claims (8)
1. A multi-layer HTCC based hermetic waveguide-microstrip transition structure comprising: the device comprises a top metal plate (3), wherein two top metal plate grooves (16) which are symmetrically arranged are formed in the top metal plate (3), a second communication groove (17) is formed between the two top metal plate grooves (16), two ends of the second communication groove (17) are respectively communicated with the corresponding top metal plate grooves (16), and coplanar waveguide coupling parts are arranged in the second communication groove (17) and the two top metal plate grooves (16);
The top of the top metal plate (3) is fixedly connected with a surface vacuum cavity (2), and the surface vacuum cavity (2) is arranged to cover the second communication slot (17) and the two top metal plate slots (16);
The bottom of the top metal plate (3) is fixedly connected with the top end of a medium transmission assembly, and the bottom ends of the medium transmission assembly are respectively fixedly connected with two symmetrically arranged standard W-band waveguides (1);
A first shielding part and a second shielding part are arranged below the second communication slot (17), the first shielding part is positioned in the projection area of the second communication slot (17), and the second shielding part is positioned outside the projection area of the second communication slot (17).
2. The multi-layer HTCC based hermetic waveguide-microstrip transition structure according to claim 1, wherein: the coplanar waveguide coupling part comprises a microstrip line (4), the microstrip line (4) is arranged in the second communication slot (17), a gap is reserved between the edge of the microstrip line (4) and the inner wall of the second communication slot (17), one end of a coplanar waveguide (19) is fixedly connected to two ends of the microstrip line (4) respectively, the other end of the coplanar waveguide (19) stretches into the corresponding top metal plate slot (16), one end of the coplanar waveguide (19) far away from the microstrip line (4) is fixedly connected with an on-board coupling piece (5), the on-board coupling piece (5) is coaxially arranged in the top metal plate slot (16), and a gap is reserved between the edge of the on-board coupling piece (5) and the inner wall of the top metal plate slot (16);
The top metal plate (3), the microstrip line (4), the coplanar waveguide (19) and the on-board coupling piece (5) are located in the same plane, and the microstrip line (4), the coplanar waveguide (19) and the on-board coupling piece (5) are fixedly connected with the top of the medium transmission assembly.
3. The multi-layer HTCC based hermetic waveguide-microstrip transition structure according to claim 2, wherein: the medium transmission assembly comprises a plurality of HTTC medium plates (6), an intermediate metal plate (9) is arranged between two adjacent HTTC medium plates (6), the intermediate metal plate (9) is fixedly connected with the HTTC medium plates (6), the top of the HTTC medium plate (6) positioned on the top surface is fixedly connected with the bottom of the top metal plate (3), the bottom of the HTTC medium plate (6) positioned on the bottom surface is fixedly connected with a bottom coupling part, and the tops of two standard W wave band waveguides (1) are fixedly connected to the bottom of the bottom coupling part;
and the microstrip line (4) and the on-board coupling piece (5) are fixedly connected with the top of the HTTC dielectric plate (6) positioned at the top.
4. A multi-layer HTCC based hermetic waveguide-microstrip transition according to claim 3, wherein: the bottom coupling part comprises a bottom metal plate (14), the top of the bottom metal plate (14) is fixedly connected with the bottom of the HTTC medium plate (6) which is positioned at the bottom, two bottom metal plate grooves (18) are symmetrically formed in the bottom metal plate (14), the two bottom metal plate grooves (18) are in one-to-one correspondence with the two standard W-band waveguides (1), the top of the standard W-band waveguides (1) is fixedly connected with the bottom of the bottom metal plate (14), a plate bottom coupling piece (10) is arranged in the middle of the inner side of the bottom metal plate groove (18), a shielding piece (15) is fixedly connected with the inner wall of the bottom metal plate groove (18), and the plate bottom coupling piece (10) is fixedly connected with the bottom of the HTTC medium plate (6) which is positioned at the bottom.
5. The multi-layer HTCC based hermetic waveguide-microstrip transition structure according to claim 4, wherein: the first shielding part comprises a plurality of internal metallization via holes (12), the internal metallization via holes (12) are distributed in a matrix in a projection area of the second communication slot (17), the internal metallization via holes (12) penetrate through a plurality of HTTC dielectric plates (6) below a first layer and a plurality of middle metal plates (9), the tops of the internal metallization via holes (12) are in contact with the bottoms of the top metal plates (3), and the bottoms of the internal metallization via holes (12) are in contact with the tops of the bottom metal plates (14).
6. The multi-layer HTCC based hermetic waveguide-microstrip transition structure according to claim 5, wherein: the second shielding part comprises a plurality of external metallization via holes (7), the external metallization via holes (7) are evenly distributed along the outer side of a projection area of the second communication slot (17), the external metallization via holes (7) penetrate through the HTTC dielectric plates (6) and the middle metal plates (9), the tops of the external metallization via holes (7) are in contact with the bottoms of the top metal plates (3), and the bottoms of the external metallization via holes (7) are in contact with the tops of the bottom metal plates (14).
7. The multi-layer HTCC based hermetic waveguide-microstrip transition structure according to claim 6, wherein: two symmetrically arranged through slots (13) are formed in the middle metal plate (9), and the through slots (13) are correspondingly arranged at the top of the standard W-band waveguide (1).
8. The multi-layer HTCC based hermetic waveguide-microstrip transition structure according to claim 7, wherein: at least one of the middle metal plates (9) positioned above is provided with a first communication slot (8), the first communication slot (8) is positioned between two corresponding through slots (13), the first communication slot (8) is positioned under the second communication slot (17), and the end parts of the first communication slots (8) are respectively communicated with the corresponding through slots (13);
The inner metallized via holes (12) penetrate through a plurality of HTTC dielectric plates (6) and a plurality of intermediate metal plates (9) which are positioned below the first intermediate metal plate (9) without the first communication slot (8).
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5982250A (en) * | 1997-11-26 | 1999-11-09 | Twr Inc. | Millimeter-wave LTCC package |
| US6870438B1 (en) * | 1999-11-10 | 2005-03-22 | Kyocera Corporation | Multi-layered wiring board for slot coupling a transmission line to a waveguide |
| JP2005278016A (en) * | 2004-03-26 | 2005-10-06 | Sumitomo Metal Electronics Devices Inc | Circuit board |
| KR20180074069A (en) * | 2016-12-23 | 2018-07-03 | 목포해양대학교 산학협력단 | Waveguide-to-Stripline Transition |
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2024
- 2024-03-05 CN CN202410246750.0A patent/CN118156756A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5982250A (en) * | 1997-11-26 | 1999-11-09 | Twr Inc. | Millimeter-wave LTCC package |
| US6870438B1 (en) * | 1999-11-10 | 2005-03-22 | Kyocera Corporation | Multi-layered wiring board for slot coupling a transmission line to a waveguide |
| JP2005278016A (en) * | 2004-03-26 | 2005-10-06 | Sumitomo Metal Electronics Devices Inc | Circuit board |
| KR20180074069A (en) * | 2016-12-23 | 2018-07-03 | 목포해양대학교 산학협력단 | Waveguide-to-Stripline Transition |
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