Nothing Special   »   [go: up one dir, main page]

CN118112451A - Radio frequency power supply measuring circuit, radio frequency power supply and semiconductor process equipment - Google Patents

Radio frequency power supply measuring circuit, radio frequency power supply and semiconductor process equipment Download PDF

Info

Publication number
CN118112451A
CN118112451A CN202211521055.8A CN202211521055A CN118112451A CN 118112451 A CN118112451 A CN 118112451A CN 202211521055 A CN202211521055 A CN 202211521055A CN 118112451 A CN118112451 A CN 118112451A
Authority
CN
China
Prior art keywords
sampling
signal
radio frequency
sub
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211521055.8A
Other languages
Chinese (zh)
Inventor
周航
张永东
李光健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Huacheng Electronics Co ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to CN202211521055.8A priority Critical patent/CN118112451A/en
Publication of CN118112451A publication Critical patent/CN118112451A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/30Structural combination of electric measuring instruments with basic electronic circuits, e.g. with amplifier
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R21/00Arrangements for measuring electric power or power factor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/40Testing power supplies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Measuring Frequencies, Analyzing Spectra (AREA)

Abstract

The embodiment of the invention provides a measuring circuit of a radio frequency power supply, the radio frequency power supply and semiconductor process equipment, which comprises the following components: the processor is connected with the power source and is used for receiving the radio frequency control signal of the power source, generating a sampling control signal based on the radio frequency control signal and generating a sampling signal based on the sampling control signal and a preset sampling frequency signal; the frequency of the sampling control signal is four times of the frequency of the radio frequency control signal and is corresponding to a positive integer which is larger than one; the sampling module is connected with the processor and the power source and is used for receiving the sampling signal and sampling the output signal of the power source based on the sampling signal to generate a sampling result; the processor is also used for determining the output parameter of the power source according to the sampling result. According to the embodiment of the invention, the AC signal of the power source is directly sampled for measurement, so that the accuracy of measurement can be improved; the sampling module is used for sampling the radio frequency power supply, and the phase information of the sampling voltage and the sampling current can be obtained directly based on the sampling result.

Description

Radio frequency power supply measuring circuit, radio frequency power supply and semiconductor process equipment
Technical Field
The present invention relates to the field of semiconductor technology, and in particular, to a measurement circuit for a radio frequency power supply, and a semiconductor processing apparatus.
Background
The radio frequency power supply is a device capable of outputting radio frequency energy, also called a radio frequency generator, and is commonly used in the industries of semiconductor etching, deposition, coating, medical treatment and the like, in order to ensure the accuracy and linearity of the output radio frequency energy, a control system of the radio frequency power supply generally adopts a closed-loop control technology as a feedback signal of the closed-loop control technology, and a radio frequency power measurement technology is one of key technologies in the development process of the radio frequency power supply.
The output control amount of the rf power supply is generally forward power or load power, wherein the load power is the difference between the forward power and the reflected power, and thus the sensor of the rf power supply needs to measure the forward power and the reflected power of the rf energy. The forward power refers to power transmitted from the inside to the outside of the radio frequency power supply in the direction, the reflected power refers to power transmitted from the outside to the inside of the radio frequency power supply in the direction, the forward power and the reflected power are used as sensors through a directional coupler, the directional coupler is coupled with a small part of radio frequency power of a transmission line at the output end of the radio frequency power supply, the small part of radio frequency power enters a measuring module after rectifying and filtering, the amplitude of the part of radio frequency energy is measured by the measuring module, and the forward power and the reflected power are obtained through digital or analog calculation.
In the semiconductor field, the load of the radio frequency power supply is generally plasma, and the plasma comprises states such as before starting, after starting, critical state and the like, so that the directional coupler needs to measure information such as impedance of the load in order to ensure stability and control of the radio frequency power supply.
In the prior art, the direct current signal obtained after low-pass filtering is collected to calculate the information of the radio frequency power supply, but the direct current signal is inaccurate due to interference in the low-pass filtering of the direct current signal, so that the obtained information of the radio frequency power supply also has larger error, and the direct current signal is adopted to calculate, so that the phase information of voltage and current is lost, only the mode and the phase difference of impedance can be calculated, and the real and imaginary parts of impedance cannot be calculated.
Disclosure of Invention
In view of the above, embodiments of the present invention have been made to provide a measurement circuit of a radio frequency power supply, and a semiconductor process apparatus that overcome or at least partially solve the above problems.
In order to solve the above problems, an embodiment of the present invention discloses a measurement circuit of a radio frequency power supply, where the measurement circuit is connected with a power source of the radio frequency power supply, and the measurement circuit is used to measure an output parameter of the power source; the measurement circuit includes:
The processor is connected with the power source and is used for receiving the radio frequency control signal of the power source, generating a sampling control signal based on the radio frequency control signal and generating a sampling signal based on the sampling control signal and a preset sampling frequency signal; the frequency of the sampling control signal is a positive integer multiple corresponding to four times of the frequency of the radio frequency control signal;
The sampling module is connected with the processor and the power source and is used for receiving the sampling signal and sampling the output signal of the power source based on the sampling signal to generate a sampling result;
The processor is also used for determining the output parameter of the power source according to the sampling result.
Optionally, the processor includes:
The phase-locked loop is connected with the power source and is used for receiving a radio frequency control signal of the power source and generating the sampling control signal based on the radio frequency control signal;
the sampling frequency control module is used for generating the preset sampling frequency signal;
The sampling frequency processing module is connected with the sampling frequency control module, the phase-locked loop and the sampling module and is used for receiving the sampling control signal and the preset sampling frequency signal, generating the sampling signal when the sampling control signal and the preset sampling frequency signal are at the same type of edge, and sending the sampling signal to the sampling module;
and the sampling result processing module is connected with the sampling module and is used for determining the output parameters of the power source according to the sampling result.
Optionally, the sampling signal includes a first sampling sub-signal and a second sampling sub-signal, and the sampling frequency processing module includes:
The first sampling frequency processing sub-module is connected with the phase-locked loop and is used for receiving the sampling control signal and the preset sampling frequency signal and generating the first sampling sub-signal when the sampling control signal and the preset sampling frequency signal are at the same type of edge;
the first sampling control sub-module is connected with the first sampling frequency processing sub-module and the sampling module and is used for sending the first sampling sub-signal to the sampling module;
The second sampling frequency processing sub-module is connected with the phase-locked loop and is used for receiving the sampling control signal and the preset sampling frequency signal and generating a second sampling sub-signal when the sampling control signal and the preset sampling frequency signal are at the same type of edge;
The second sampling control sub-module is connected with the second sampling frequency processing sub-module and the sampling module and is used for sending the second sampling sub-signal to the sampling module;
Wherein the first sampled sub-signal and the second sampled sub-signal differ in phase by pi/2.
Optionally, the first sampling frequency processing sub-module is configured to output a rising edge of the first sampling sub-signal when the preset sampling frequency signal is at a rising edge and the sampling control signal is at an odd number of rising edges, and output a falling edge of the first sampling sub-signal when the preset sampling frequency signal is at a falling edge and the sampling control signal is at an odd number of falling edges.
Optionally, the second sampling frequency processing sub-module is configured to output a rising edge of the second sampling sub-signal when the preset sampling frequency signal is at a rising edge and the sampling control signal is at an even number of rising edges, and output a falling edge of the second sampling sub-signal when the preset sampling frequency signal is at a falling edge and the sampling control signal is at an even number of falling edges.
Optionally, the first sampling frequency processing sub-module includes a first exclusive or gate;
The second sampling frequency processing sub-module comprises a second exclusive-or gate;
the first and second exclusive-or gates are output phase-separated by pi/2.
Optionally, the sampling module includes:
a first sampling sub-circuit connected with the first sampling control sub-module, for sampling a first forward power value of the radio frequency power supply based on the first sampling sub-signal;
a second sampling sub-circuit connected to the second sampling control sub-module for sampling a second forward power value of the radio frequency power source based on the second sampling sub-signal;
A third sampling sub-circuit connected with the first sampling control sub-module, for sampling a first reflection power value of the radio frequency power supply based on the first sampling sub-signal;
and the fourth sampling sub-circuit is connected with the second sampling control sub-module and is used for sampling a second reflection power value of the radio frequency power supply based on the second sampling sub-signal.
Optionally, the sampling result processing module is configured to calculate a radio frequency voltage phase according to the first forward power value and the second forward power value; calculating a radio frequency current phase according to the first reflection power value and the second reflection power value; and calculating the impedance imaginary part and the real part of the radio frequency power supply according to the first forward power value, the second forward power value, the first reflection power value and the second reflection power value.
The embodiment of the invention also discloses a radio frequency power supply, which comprises a measuring circuit and a power source which are connected with each other, wherein the measuring circuit is the measuring circuit of the radio frequency power supply.
The embodiment of the invention also discloses semiconductor process equipment, which comprises a radio frequency power supply, a radio frequency matcher and a process chamber, wherein the input end of the radio frequency matcher is connected with the radio frequency power supply, and the output end of the radio frequency matcher is connected with the process chamber; the radio frequency power supply is the radio frequency power supply; the process chamber is used for bearing a wafer to be processed, and the radio frequency power supply is used for generating radio frequency power to excite process gas in the process chamber to form plasma; the radio frequency matcher is used for loading radio frequency power to the process chamber.
The embodiment of the invention has the following advantages:
according to the embodiment of the invention, the processor connected with the power source receives the radio frequency control signal of the power source, generates a sampling control signal based on the radio frequency control signal, and generates a sampling signal based on the sampling control signal and a preset sampling frequency signal; the frequency of the sampling control signal is a positive integer multiple corresponding to four times of the frequency of the radio frequency control signal; the sampling module is connected with the processor and the power source, receives the sampling signal, samples the output signal of the power source based on the sampling signal, and generates a sampling result; the processor also determines an output parameter of the power source according to the sampling result. The alternating current signal of the direct power source is used for sampling and measuring, so that the accuracy of measurement can be improved; and the sampling module is used for sampling the power source based on the sampling control signal, so that the phase information of the sampling voltage and the sampling current can be obtained directly based on the sampling result.
Drawings
FIG. 1 is a block diagram of a power measurement circuit of a prior art radio frequency power supply;
FIG. 2 is a schematic diagram of a measurement circuit embodiment of a RF power supply according to the present invention;
FIG. 3 is a schematic diagram of another embodiment of a measurement circuit for a RF power supply according to the present invention;
FIG. 4 is a signal diagram of a sampling frequency control module of an embodiment of a measurement circuit of a RF power supply according to the present invention;
FIG. 5 is a schematic diagram of the forward power waveforms of an embodiment of a measurement circuit of a RF power source according to the present invention;
FIG. 6 is a block diagram of an embodiment of a radio frequency power supply of the present invention;
fig. 7 is a block diagram of an embodiment of a semiconductor processing apparatus of the present invention.
Detailed Description
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
The power measurement circuit block diagram of the conventional radio frequency power supply is shown in fig. 1, the ac voltage signal U i output by the directional coupler has zero dc component, and the frequency is often higher than the acquisition frequency of the control system, and cannot be directly acquired through an analog-digital converter (hereinafter referred to as ADC). The existing technical scheme uses a multiplier to convert the waveform of an alternating voltage signal U i into a full-wave waveform U i ' with positive voltage, then the full-wave waveform is changed into a direct current signal U 1 through a low-pass filter, then the direct current signal U 2 is changed into a direct current signal U 2 after being amplified by an operational amplifier, the direct current signal U 2 is collected by an ADC converter and then is sent to a controller, and the controller obtains U 2 according to an ADC sampling value; and obtaining the amplitude A of the alternating voltage signal according to the relation between the U 2 and the amplitude A of the alternating voltage signal. Obtaining actual output power P according to the relation between the actual output power P and the alternating voltage signal amplitude A; but other electrical parameters cannot be obtained by measurement and calculation.
Referring to fig. 2, a schematic diagram of a measurement circuit embodiment of a radio frequency power supply of the present invention is shown. The measuring circuit is connected with the power source 1 of the radio frequency power supply, and is used for measuring the output parameter of the power source 1, and the measuring circuit specifically can comprise the following modules:
The processor 2 is connected with the power source 1, and is used for receiving a radio frequency control signal of the power source, generating a sampling control signal based on the radio frequency control signal, and generating a sampling signal based on the sampling control signal and a preset sampling frequency signal; the frequency of the sampling control signal is a positive integer multiple corresponding to four times of the frequency of the radio frequency control signal;
The sampling module 3 is connected with the processing 2 and the power source 1 and is used for receiving the sampling signal and sampling the output signal of the power source based on the sampling signal to generate a sampling result;
the processor 2 is further configured to determine an output parameter of the power source 1 according to the sampling result.
In an embodiment of the invention, the measuring circuit may comprise two parts, namely a processor 2 and a sampling module 3. The processor 2 may be a dedicated processor dedicated to processing signals of the power source 1 in the measurement radio frequency power supply; and may also be shared with other modules of the semiconductor processing apparatus. The processor 2 is a special purpose processor in the embodiment of the invention.
The input end of the processor 2 is connected with the power source 1, and the processor 2 receives a radio frequency control signal of the power source 1, wherein the radio frequency control signal is an excitation signal of the power source 1. When the processor 2 receives the radio frequency control signal of the power source 1, the processor 2 adjusts the phase of the radio frequency control signal to generate a multiplied sampling control signal. The frequency of the sampling control signal is four times of the frequency of the radio frequency control signal and corresponds to positive integer times. I.e. the frequency of the sampling control signal is a positive integer multiple of four, such as four, eight, twelve, etc., times the frequency of the radio frequency control signal. And the processor 2 generates a sampling signal based on the sampling control signal and a preset sampling frequency signal, and the sampling module is controlled by the sampling signal to sample the output signal of the power source. The preset sampling frequency signal can be set according to the sampling requirement, which is not limited in the embodiment of the invention.
The input end of the sampling module 3 is connected with the power source 1 and the processor 2, and the output end of the sampling module 3 is connected with the input end of the processor 2. The sampling module 3 receives the sampling signal sent by the processor 2, and performs signal sampling on the output signal of the power source 1 connected to the input end of the sampling signal based on the waveform of the sampling signal, so as to generate a sampling result. And sends the sampling result to the processor 2 via its output. The processor 2 calculates the sampling result to obtain output parameters such as current, voltage, impedance and the like output by the power source.
According to the embodiment of the invention, the processor connected with the power source receives the radio frequency control signal of the power source, generates a sampling control signal based on the radio frequency control signal, and generates a sampling signal based on the sampling control signal and a preset sampling frequency signal; the frequency of the sampling control signal is a positive integer multiple corresponding to four times of the frequency of the radio frequency control signal; the sampling module is connected with the processor and the power source, receives the sampling signal, samples the output signal of the power source based on the sampling signal, and generates a sampling result; the processor also determines an output parameter of the power source according to the sampling result. The alternating current signal of the direct power source is used for sampling and measuring, so that the accuracy of measurement can be improved; and the sampling module is used for sampling the power source based on the sampling control signal, so that the phase information of the sampling voltage and the sampling current can be obtained directly based on the sampling result.
Referring to fig. 3, there is shown a schematic structural diagram of another embodiment of a measurement circuit of a radio frequency power supply of the present invention, where the measurement circuit is connected to a power source 1 of the radio frequency power supply, and the power source 1 may include three parts, namely an excitation source 11, a power amplification module 12 and a directional coupler 13. The excitation source 11 is used for emitting a radio frequency control signal in the operating frequency range to drive the power source. The radio frequency control signal of the excitation source 11 may be an excitation signal of square wave waveform or sine wave waveform. The working frequency of the radio frequency power supply is 2M-60 MHz (megahertz), and the power amplification module 12 amplifies the excitation signal of the square wave waveform or sine wave waveform of 2M-60M of the excitation source 11 into radio frequency power. The directional coupler 13 samples the radio frequency power, and the analog signal output by the directional coupler 13 is used for closed-loop control of the radio frequency power, and the precision of the radio frequency power is affected by factors such as sampling frequency, sampling precision and the like. As shown in fig. 3, the embodiment of the present invention is exemplarily illustrated with an operating frequency of 13.56 MHz.
The measuring circuit may in particular comprise a processor 2 and a sampling module 3. The input end of the processor 2 is connected with the power source 1, and receives a radio frequency control signal of a 13.56MHz square wave form sent by the excitation source 11 in the power source 1. The processor 2 has a phase locked loop 21 built in, which phase locked loop 21 is connected to the power source 1, in particular to the excitation source 11. The phase of the radio frequency control signal is adjusted by the phase-locked loop to generate a sampling control signal. The frequency of the sampling control signal is a positive integer multiple corresponding to four times the frequency of the radio frequency control signal. As shown in fig. 3, the frequency of the sampling control signal is four times the frequency of the radio frequency control signal, i.e. the corresponding positive integer is 1. And the processor also generates a sampling signal based on the sampling control signal and a preset sampling frequency signal, and the sampling module 3 is controlled to sample by the sampling signal.
For the processor 2, it may be a digital signal processor (DIGITAL SIGNAL Processing, DSP), application SPECIFIC INTEGRATED Circuit (ASIC), field-Programmable gate array (Field-Programmable GATE ARRAY, FPGA) or other Programmable logic device, discrete gate or transistor logic device, discrete hardware components. In an example of the invention, the processor 2 is an FPGA chip.
Specifically, the processor 2 includes the following sub-modules:
A phase-locked loop 21 connected to the power source 1, for receiving the radio frequency control signal of the power source 1 and generating a sampling control signal based on the radio frequency control signal; namely, the phase-locked loop 21 receives the 13.56MHz radio frequency control signal output by the excitation source 11 by connecting the excitation source 11 in the power source 1, and the phase-locked loop locks by the phase of the radio frequency control signal to generate the 54.24MHz sampling control signal. And the period of the 54.24MHz sampling control signal is one quarter of the period of the 13.56MHz radio frequency control signal, the 13.56MHz signal can be equally divided into four sections.
A sampling frequency control module 22, configured to generate a preset sampling frequency signal; the sampling frequency signal may be set to a specific frequency as desired. If the set frequency is 1MHz, the sampling frequency control module 22 generates a preset sampling frequency signal of 1MHz according to the internal circuit.
And the sampling frequency processing module is connected with the sampling frequency control module 22, the phase-locked loop 21 and the sampling module 3 and is used for receiving the sampling control signal and the preset sampling frequency signal, generating the sampling signal when the sampling control signal and the preset sampling frequency signal are at the same type of edge, and sending the sampling signal to the sampling module.
The sampling frequency processing module receives a sampling control signal and a preset sampling frequency signal, and generates a sampling signal based on the sampling control signal and the preset sampling frequency signal when the sampling control signal and the preset sampling frequency signal are at the same type of edge; i.e. the sampling signal may be generated when both the sampling control signal and the preset sampling frequency signal are on a rising edge or both are on a falling edge. And sends the sampling signal to the sampling module 3; the sampling module 3 is controlled by the sampling signal to collect the output signal of the power source 1.
And the sampling result processing module 27 is connected with the sampling module 3 and is used for processing the sampling result. The sampling result processing module 27 processes the acquired sampling result and calculates output parameters such as current, voltage, and impedance of the rf power supply.
In addition, after the pll 21 receives the rf control signal, it outputs two paths of sampling control signals with pi/2 phase difference directly based on the amplitude of the rf control signal, and the sampling frequency processing module generates sampling signals by two sets of sampling control signals with different phases and sends the sampling signals to the sampling module 3 to control the sampling module 3 to perform signal acquisition.
In an alternative embodiment of the present invention, the sampling signal includes a first sampling sub-signal and a second sampling sub-signal, and the sampling frequency processing module includes:
The input end of the first sampling frequency processing sub-module 24 is connected with the output end of the phase-locked loop 21, and is used for receiving the sampling control signal and the preset sampling frequency signal to generate a first sampling sub-signal. The first sampling frequency processing sub-module 24 generates a first sampling sub-signal based on the sampling control signal and the edges of the preset sampling frequency signal. Specifically, the rising edge of the first sampling sub-signal is output when the preset sampling frequency signal is at the rising edge and the sampling control signal is at the odd number of rising edges, and the falling edge of the first sampling sub-signal is output when the preset sampling frequency signal is at the falling edge and the sampling control signal is at the odd number of falling edges. The relationship between the first sampling sub-signal and the sampling control signal (54.24 MHz signal) and the preset sampling frequency signal (1 MHz sampling signal) may refer to fig. 4, where the sampling control signal is on a rising edge, and outputs a rising edge of the first sampling sub-signal after the sampling control signal is on a first rising edge, and the sampling control signal is on a falling edge, and outputs a falling edge of the first sampling sub-signal after the sampling control signal is on the first falling edge. And then generating edges corresponding to the first sampling sub-signal when the third, fifth and other odd rising edges and falling edges are generated.
An input of the first sampling control sub-module 26 is connected to an output of the first sampling frequency processing sub-module 24, and an output of the first sampling control sub-module 26 is connected to an input of the sampling module 3. The first sampling control sub-module 26 sends the received first sampling sub-signal to the sampling module. I.e. the first sampling control sub-module 26, upon receiving the first sampling sub-signal, forwards the first sampling sub-signal into the sampling module 3 such that the sampling module 3 performs signal sampling based on the first sampling sub-signal.
The second sampling frequency processing sub-module 23, the input end of the second sampling frequency processing sub-module 23 is connected with the output end of the phase-locked loop 21. The second sampling frequency processing sub-module 23 receives the sampling control signal and the preset sampling frequency signal and generates a second sampling sub-signal; the second sampling frequency processing sub-module 23 generates a first sampling sub-signal based on the sampling control signal and the edges of the preset sampling frequency signal. Wherein the first sampled sub-signal and the second sampled sub-signal differ in phase by pi/2. Specifically, the second sampling frequency processing sub-module is configured to output a rising edge of the second sampling sub-signal when the preset sampling frequency signal is at a rising edge and the sampling control signal is at an even number of rising edges, and output a falling edge of the second sampling sub-signal when the preset sampling frequency signal is at a falling edge and the sampling control signal is at an even number of falling edges. The relationship between the second sampling sub-signal and the sampling control signal (54.24 MHz signal) and the preset sampling frequency signal (1 MHz sampling signal) may refer to fig. 4, where the sampling control signal is on a rising edge, and outputs a rising edge of the second sampling sub-signal after the sampling control signal is on a second rising edge, and the sampling control signal is on a falling edge, and outputs a falling edge of the second sampling sub-signal after the sampling control signal is on a second falling edge. And then outputting the corresponding edge of the second sampling sub-signal when the fourth, sixth and other even numbers of rising edges and falling edges are generated.
The input end of the second sampling control sub-module 25 is connected with the output end of the second sampling frequency processing sub-module 23, and the output end of the second sampling control sub-module 25 is connected with the sampling module 3. The second sampling control sub-module 25 sends a second sampling sub-signal to the sampling module 3. I.e. the first sampling control sub-module 25, upon receiving the second sampling sub-signal, forwards the second sampling sub-signal to the sampling module 3 such that the sampling module 3 performs signal sampling based on the second sampling sub-signal.
Furthermore, the first sampling frequency processing sub-module 24 comprises a first exclusive or gate; the second sampling frequency processing sub-module 23 comprises a second exclusive or gate. Generating a first sampling sub-signal based on a value of a preset sampling frequency signal and a sampling control signal at the same time through a first exclusive-OR gate; generating a second sampling sub-signal based on the value of the preset sampling frequency signal and the sampling control signal at the same time through a second exclusive-OR gate; since the first and second exclusive-or gates are output phase-shifted by pi/2; such that the phase of the first sampled sub-signal and the second sampled sub-signal differ by pi/2.
And through the first sampling sub-signals and the second sampling sub-signals with different phases, the power source is directly subjected to signal acquisition at different moments, so that the sampling delay is reduced, and the sampling speed is improved.
The input end of the sampling module 3 is connected with the power source 1 to sample the power of the power source 1. The output end of the sampling module 3 is connected with the processor 2, and the sampling result is sent to the processor 2 for data processing.
Specifically, the sampling module 3 includes: a first sampling sub-circuit 31, a second sampling sub-circuit 32, a third sampling sub-circuit 33 and a fourth sampling sub-circuit 34.
The first sampling sub-circuit 31 is connected to the first sampling control sub-module 26, and samples the forward power signal of the power source 1 after receiving the first sampling sub-signal, so as to generate a first forward power value.
The second sampling sub-circuit 32 is connected to the second sampling control sub-module 25, and samples the forward power signal of the power source 1 after receiving the second sampling sub-signal, to generate a second forward power value.
The third sampling sub-circuit 33 is connected to the first sampling control sub-module 26, and samples the reflected power signal of the power source 1 after receiving the first sampling sub-signal, to generate a first reflected power value.
The fourth sampling sub-circuit 34 is connected to the second sampling control sub-module 25, and samples the reflected power signal of the power source 1 after receiving the second sampling sub-signal, to generate a second reflected power value.
Referring to fig. 2, an output end of the excitation source 11 is connected to an input end of the phase-locked loop 21, an output end of the phase-locked loop 21 is connected to a first sampling frequency processing sub-module 24 and a second sampling frequency processing sub-module 23, an output end of the sampling frequency control module 22 is connected to the first sampling frequency processing sub-module 24 and the second sampling frequency processing sub-module 23, an output end of the first sampling frequency processing sub-module 24 is connected to a first sampling control sub-module 26, an output end of the second sampling frequency processing sub-module 23 is connected to a second sampling control sub-module 25, an output end of the first sampling control sub-module 26 is connected to a first sampling sub-circuit 31 and a third sampling sub-circuit 33, and an output end of the second sampling control sub-module 25 is connected to a second sampling sub-circuit 32 and a fourth sampling sub-circuit 34. The first and second sampling sub-circuits 31, 32 collect forward power signals output by the directional coupler 13 under the control of the processor 2, and the third and fourth sampling sub-circuits 33, 34 collect reflected power signals output by the directional coupler 13. The outputs of the first 31, second 32, third 33 and fourth 34 sampling sub-circuits are connected to the sampling result processing module 27 of the processor 2. Because the power source 1 can be directly subjected to signal acquisition at different moments, only two paths of sampling circuits can be added, and signals are processed to obtain output parameters, and the structure is simple. And the sampling circuit is only used for low-speed sampling, so that the development and use cost can be reduced.
The sampling result processing module is used for calculating a radio frequency voltage phase according to the first forward power value and the second forward power value; the first reflection power value and the second reflection power value calculate a radio frequency current phase; and calculating the impedance imaginary part and the real part of the radio frequency power supply according to the first forward power value, the second forward power value, the first reflection power value and the second reflection power value.
Specifically, the waveform of the forward power signal U fwd output by the directional coupler is shown in fig. 5, and the amplitude is a f0, where the expression is:
equation 1:
Ufwdf0sin()
wherein ω=2pi f, f is the operating frequency of the radio frequency power supply 13.56mhz, and t is the time in s.
The AD1 sampling value A 1 and the AD2 sampling value A 2 are different by one 54.24MHz signal period, namely one quarter of 13.56MHz signal period, so that the phase difference of A 1 and A 2 is pi/2, the sampling value A 1 is any point of the waveform, the phase is theta (theta is more than or equal to 0 and less than or equal to 2 pi), and the AD1 sampling value A 1 is:
Equation 2:
A1f0sin
The phase of sample A 2 is (θ+pi/2), so the AD2 sample point A 2 is:
Equation 3:
A2f0sin(+π/2)=Af0cos
From the sample value a 1 and the sample value a 2, the square value of the amplitude a 0 can be obtained:
Equation 4:
Af0 21 2+2 2f0 2(sin2θ+cos2θ)
The magnitude of the forward power signal U fwd is obtained using the sample a 1 and the sample a 2.
Similarly, using sample a 3 of AD3 and sample a 4 of AD4, the amplitude a r0 of reflected power signal U rfl is obtained:
Equation 5:
Ar0 2=A3 2+A4 2
Since the square of the power amplitude signal is proportional to the power value, a f0 2 and a r0 2 can be directly used for power closed loop control of the radio frequency power supply.
According to the transmission line theory, the voltage U (z) and the current I (z) at the Z point on the transmission line are:
Equation 6:
U(z)=Ufwd+Urfl
equation 7:
in the formula I (z)=(Ufwd-Urfl)/Z0, Z 0 is the characteristic impedance of the transmission line, which is generally 50Ω.
Summing the sampled value A 1 and the sampled value A 3 to obtain voltage information U 1:
Equation 8:
U1=A1+A3
summing the sampled value A 2 and the sampled value A 4 to obtain voltage information U 2:
Equation 9:
U2=A2+A4
The voltage information U 1 and the voltage information U 2 are sampled at a quarter cycle of 13.56MHz, i.e., phase difference pi/2.
The current information I 1 is obtained by using the difference between the sampling value a 1 and the sampling value a 3:
equation 10:
I1=A3-A1
the current information I 2 is obtained by using the difference between the sampling value a 2 and the sampling value a 4:
Equation 11:
I2=A4-A2
The current information I 1 and the current information I 2 are sampled at intervals of one quarter of a cycle of 13.56MHz, i.e., phase difference pi/2.
The waveform diagram of the voltage and the circuit is also a sine wave, and the voltage amplitude U 0 and the current amplitude I 0 on the transmission line are obtained by referring to the calculation mode of the forward power and the reflected power.
Equation 12:
U0 2=U1 2+U2 2
equation 13:
I0 2=I1 2+I2 2
The modulus of the resulting load impedance is, according to ohm's law:
equation 14:
The difference between the voltage signal U 1 and the voltage signal U 2 is obtained:
equation 15:
Equation 16:
The phase of the sample point voltage can be calculated according to equations 8, 9 and 16 The method comprises the following steps:
equation 17:
The current phase of the sampling point can be obtained by the same method:
equation 30:
the phase angle of the load impedance is the phase difference of the voltage and the current
Equation 31:
The real part a and the imaginary part b of the load Z L are:
Equation 32:
ZL=a+jb
The plural definitions can be found:
equation 33:
Equation 34:
The values of the real part a and the imaginary part b of the load impedance can be derived:
Equation 35:
Equation 36:
According to the embodiment of the invention, the alternating current signal of the radio frequency power supply is directly sampled for measurement, so that the accuracy of measurement can be improved; the direct sampling can reduce sampling delay and improve sampling speed; the sampling module is used for sampling the radio frequency power supply, the sampling result is directly based on the sampling result to obtain the phase information of the acquired voltage and current and the virtual-real part of the impedance, the circuit structure is simple, the sampling is carried out by adopting a low-speed sampling circuit, and the cost can be reduced.
It should be noted that, for simplicity of description, the method embodiments are shown as a series of acts, but it should be understood by those skilled in the art that the embodiments are not limited by the order of acts, as some steps may occur in other orders or concurrently in accordance with the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred embodiments, and that the acts are not necessarily required by the embodiments of the invention.
Referring to fig. 6, a block diagram of a radio frequency power supply according to an embodiment of the present invention is shown, the radio frequency power supply includes a measurement circuit 601 and a power source 602 that are connected to each other, wherein the measurement circuit 602 is a measurement circuit of the radio frequency power supply as described above.
Referring to fig. 7, a block diagram of a semiconductor process device according to an embodiment of the present invention is shown, where the semiconductor process device 701 includes a radio frequency power supply 7011, a radio frequency matcher 7012, and a process chamber 7013, an input end of the radio frequency matcher 7012 is connected to the radio frequency power supply 7011, and an output end of the radio frequency matcher 7012 is connected to the process chamber 7013; the rf power supply 7011 is the rf power supply 7011 described above; the process chamber 7012 is used for carrying a wafer to be processed, and the rf power supply 7011 is used for generating rf power to excite the process gas in the process chamber 7013 to form plasma; the rf matcher 7012 is configured to load rf power into the process chamber.
For the device embodiments, since they are substantially similar to the method embodiments, the description is relatively simple, and reference is made to the description of the method embodiments for relevant points.
In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described by differences from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other.
It will be apparent to those skilled in the art that embodiments of the present invention may be provided as a method, apparatus, or computer program product. Accordingly, embodiments of the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, embodiments of the invention may take the form of a computer program product on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) having computer-usable program code embodied therein.
Embodiments of the present invention are described with reference to flowchart illustrations and/or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing terminal device to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal device, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the embodiments of the invention.
Finally, it is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or terminal device that comprises the element.
The above description of the measuring circuit of the radio frequency power supply, the radio frequency power supply and the semiconductor process equipment provided by the invention applies specific examples to illustrate the principle and the implementation of the invention, and the description of the above examples is only used for helping to understand the method and the core idea of the invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.

Claims (10)

1. The measuring circuit of the radio frequency power supply is characterized in that the measuring circuit is connected with a power source of the radio frequency power supply and is used for measuring output parameters of the power source; the measurement circuit includes:
The processor is connected with the power source and is used for receiving the radio frequency control signal of the power source, generating a sampling control signal based on the radio frequency control signal and generating a sampling signal based on the sampling control signal and a preset sampling frequency signal; the frequency of the sampling control signal is a positive integer multiple corresponding to four times of the frequency of the radio frequency control signal;
The sampling module is connected with the processor and the power source and is used for receiving the sampling signal and sampling the output signal of the power source based on the sampling signal to generate a sampling result;
The processor is also used for determining the output parameter of the power source according to the sampling result.
2. The radio frequency power supply measurement circuit of claim 1, wherein the processor comprises:
The phase-locked loop is connected with the power source and is used for receiving a radio frequency control signal of the power source and generating the sampling control signal based on the radio frequency control signal;
the sampling frequency control module is used for generating the preset sampling frequency signal;
The sampling frequency processing module is connected with the sampling frequency control module, the phase-locked loop and the sampling module and is used for receiving the sampling control signal and the preset sampling frequency signal, generating the sampling signal when the sampling control signal and the preset sampling frequency signal are at the same type of edge, and sending the sampling signal to the sampling module;
and the sampling result processing module is connected with the sampling module and is used for determining the output parameters of the power source according to the sampling result.
3. The measurement circuit of a radio frequency power supply of claim 2, wherein the sampled signal comprises a first sampled sub-signal and a second sampled sub-signal, the sampling frequency processing module comprising:
The first sampling frequency processing sub-module is connected with the phase-locked loop and is used for receiving the sampling control signal and the preset sampling frequency signal and generating the first sampling sub-signal when the sampling control signal and the preset sampling frequency signal are at the same type of edge;
the first sampling control sub-module is connected with the first sampling frequency processing sub-module and the sampling module and is used for sending the first sampling sub-signal to the sampling module;
The second sampling frequency processing sub-module is connected with the phase-locked loop and is used for receiving the sampling control signal and the preset sampling frequency signal and generating a second sampling sub-signal when the sampling control signal and the preset sampling frequency signal are at the same type of edge;
The second sampling control sub-module is connected with the second sampling frequency processing sub-module and the sampling module and is used for sending the second sampling sub-signal to the sampling module;
Wherein the first sampled sub-signal and the second sampled sub-signal differ in phase by pi/2.
4. A measuring circuit for a radio frequency power supply according to claim 3, wherein the first sampling frequency processing sub-module is configured to output a rising edge of the first sampling sub-signal when the preset sampling frequency signal is at a rising edge and the sampling control signal is at an odd number of rising edges, and output a falling edge of the first sampling sub-signal when the preset sampling frequency signal is at a falling edge and the sampling control signal is at an odd number of falling edges.
5. A measurement circuit for a radio frequency power supply as claimed in claim 3 wherein the second sampling frequency processing sub-module is arranged to output a rising edge of the second sampling sub-signal when the preset sampling frequency signal is at a rising edge and the sampling control signal is at an even number of rising edges and to output a falling edge of the second sampling sub-signal when the preset sampling frequency signal is at a falling edge and the sampling control signal is at an even number of falling edges.
6. The measuring circuit of a radio frequency power supply according to claim 3, wherein,
The first sampling frequency processing sub-module comprises a first exclusive-or gate;
The second sampling frequency processing sub-module comprises a second exclusive-or gate;
the first and second exclusive-or gates are output phase-separated by pi/2.
7. A measurement circuit for a radio frequency power supply according to claim 3, wherein the sampling module comprises:
a first sampling sub-circuit connected with the first sampling control sub-module, for sampling a first forward power value of the radio frequency power supply based on the first sampling sub-signal;
a second sampling sub-circuit connected to the second sampling control sub-module for sampling a second forward power value of the radio frequency power source based on the second sampling sub-signal;
A third sampling sub-circuit connected with the first sampling control sub-module, for sampling a first reflection power value of the radio frequency power supply based on the first sampling sub-signal;
and the fourth sampling sub-circuit is connected with the second sampling control sub-module and is used for sampling a second reflection power value of the radio frequency power supply based on the second sampling sub-signal.
8. The RF power measurement circuit of claim 7 wherein the power supply is configured to provide the power supply with a power supply voltage,
The sampling result processing module is used for calculating a radio frequency voltage phase according to the first forward power value and the second forward power value; calculating a radio frequency current phase according to the first reflection power value and the second reflection power value; and calculating the impedance imaginary part and the real part of the radio frequency power supply according to the first forward power value, the second forward power value, the first reflection power value and the second reflection power value.
9. A radio frequency power supply comprising a measurement circuit and a power source connected to each other, wherein the measurement circuit is a measurement circuit of a radio frequency power supply according to any one of claims 1 to 6.
10. The semiconductor process equipment is characterized by comprising a radio frequency power supply, a radio frequency matcher and a process chamber, wherein the input end of the radio frequency matcher is connected with the radio frequency power supply, and the output end of the radio frequency matcher is connected with the process chamber; the radio frequency power supply is the radio frequency power supply of claim 9; the process chamber is used for bearing a wafer to be processed, and the radio frequency power supply is used for generating radio frequency power to excite process gas in the process chamber to form plasma; the radio frequency matcher is used for loading radio frequency power to the process chamber.
CN202211521055.8A 2022-11-30 2022-11-30 Radio frequency power supply measuring circuit, radio frequency power supply and semiconductor process equipment Pending CN118112451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211521055.8A CN118112451A (en) 2022-11-30 2022-11-30 Radio frequency power supply measuring circuit, radio frequency power supply and semiconductor process equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211521055.8A CN118112451A (en) 2022-11-30 2022-11-30 Radio frequency power supply measuring circuit, radio frequency power supply and semiconductor process equipment

Publications (1)

Publication Number Publication Date
CN118112451A true CN118112451A (en) 2024-05-31

Family

ID=91219990

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211521055.8A Pending CN118112451A (en) 2022-11-30 2022-11-30 Radio frequency power supply measuring circuit, radio frequency power supply and semiconductor process equipment

Country Status (1)

Country Link
CN (1) CN118112451A (en)

Similar Documents

Publication Publication Date Title
CN102045036B (en) Digital phase lock amplifier
JP5631628B2 (en) Multi-rate processing for plasma RF source measurement
US7298128B2 (en) Method of detecting RF powder delivered to a load and complex impedance of the load
JP3865289B2 (en) Microwave plasma generator
US7702702B2 (en) Signal processing device for computing phase difference between alternating current signals
US20110074476A1 (en) Apparatus for lock-in amplifying an input signal and method for generating a reference signal for a lock-in amplifier
CN105676008B (en) Digital electric field sensor
CN104122444A (en) All-digital intermediate frequency spectrum analyzer and spectrum analyzing method
JP2002329599A (en) Device for detecting phase and supplying power
CN103765772A (en) Method for impedance matching and high frequency power supply
CN116755510A (en) FPGA implementation method and system of digital phase-locked amplifier
JP3808973B2 (en) Plasma processing equipment
CN118112451A (en) Radio frequency power supply measuring circuit, radio frequency power supply and semiconductor process equipment
CN104022834B (en) The measurement that DC is deviated in I/Q modulator
US10782329B2 (en) Phase analysis circuit
CN107576842B (en) Broadband synchronous sampling method
JP2014199736A (en) High frequency power supply
CN109856457B (en) Self-adaptive load impedance detection system and method
CN106483376A (en) A kind of non-blind area digit phase calculating method and device
US8654831B2 (en) Signal detection apparatus
CN111130660B (en) Phase noise measuring probe circuit
CN205157648U (en) Non -blind area digital phasemeter device
CN117728833B (en) Signal synchronization system of phase-locked amplifier and phase-locked amplifier
RU2470312C2 (en) Phase meter with heterodyne frequency conversion
JP4928816B2 (en) Semiconductor manufacturing equipment

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20240813

Address after: 100176 4s01, 4th floor, building 1, No.8 courtyard, Wenchang Avenue, Beijing Economic and Technological Development Zone, Daxing District, Beijing

Applicant after: Beijing Huacheng Electronics Co.,Ltd.

Country or region after: China

Address before: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Wenchang Road 8

Applicant before: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd.

Country or region before: China

TA01 Transfer of patent application right