CN118112081A - Gallium nitride sensor, preparation method thereof and hydrogen detection device - Google Patents
Gallium nitride sensor, preparation method thereof and hydrogen detection device Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 60
- 238000001514 detection method Methods 0.000 title claims abstract description 56
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 51
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 239000001257 hydrogen Substances 0.000 title abstract description 24
- 229910052739 hydrogen Inorganic materials 0.000 title abstract description 24
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 230000004888 barrier function Effects 0.000 claims abstract description 42
- 238000002161 passivation Methods 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims description 55
- 238000005530 etching Methods 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 10
- 238000009616 inductively coupled plasma Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 22
- 230000000694 effects Effects 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 238000011895 specific detection Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000009965 odorless effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The application provides a gallium nitride sensor, a preparation method thereof and a hydrogen detection device, wherein the gallium nitride sensor comprises: a substrate; the buffer layer, the channel layer, the barrier layer, the cap layer and the source-drain metal layer are sequentially arranged on one side of the substrate, and the channel layer and the barrier layer form a heterojunction; a passivation layer covering a portion of the surface of the channel layer, a portion of the surface of the metal layer, and at least a portion of the surface of the cap layer; the electrode is arranged on one side of the source-drain metal layer, which is away from the substrate, and covers at least part of the surface of the source-drain metal layer and part of the surface of the channel layer; the through holes penetrate through the passivation layer, the cap layer, the barrier layer, the channel layer and the buffer layer, the adjacent two through holes are arranged at intervals, a cantilever is formed between the through holes, and the cantilever and the substrate are arranged at intervals close to the surface of the buffer layer. Thus, hydrogen can be specifically recognized and the content of hydrogen can be detected.
Description
Technical Field
The application relates to the field of precision detection and micro-nano processing, in particular to a gallium nitride sensor, a preparation method thereof and a hydrogen detection device.
Background
The hydrogen has the advantages of high combustion heat value (142 kJ/g), low minimum ignition energy (0.017 mJ), wide combustibility range (4-75%), high combustion speed and the like, and is one of the best clean energy carriers. The combustion product of hydrogen is water, which is pollution-free and can be reconverted to hydrogen and oxygen for fuel cell to nuclear fusion, and is one of the most promising candidates for future transportation and energy supply. Hydrogen is odorless, colorless, odorless, and therefore, in order to avoid the dangers of explosion, fire, etc. caused by hydrogen during the production, storage, and use of hydrogen, it is necessary to rapidly and accurately detect the content of hydrogen. Gas sensors such as electrochemical sensors and catalytic sensors are widely used for monitoring hydrogen concentration. Although such sensors exhibit high sensitivity characteristics when detecting a percentage concentration of hydrogen gas, there are a number of drawbacks in continuously monitoring the hydrogen gas concentration. For example, chemical sensors have a short life; the catalytic material of the catalytic sensor is easily affected by the compound containing P, S, si and other elements, CO and hydrocarbon to produce poisoning phenomenon, thereby reducing the sensitivity. Therefore, there is a need for further improvements in the current sensors.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems in the related art to some extent.
In one aspect of the present invention, a gallium nitride sensor is presented, comprising: a substrate; the buffer layer, the channel layer, the barrier layer, the cap layer and the source-drain metal layer are sequentially arranged on one side of the substrate, and the channel layer and the barrier layer form a heterojunction; a passivation layer covering a portion of the surface of the channel layer, a portion of the surface of the metal layer, and at least a portion of the surface of the cap layer; the electrode is arranged on one side of the source-drain metal layer, which is away from the substrate, and covers at least part of the surface of the source-drain metal layer and part of the surface of the channel layer; the through holes penetrate through the passivation layer, the cap layer, the barrier layer, the channel layer and the buffer layer, two adjacent through holes are arranged at intervals, a cantilever is formed between the through holes, and the cantilever and the substrate are arranged at intervals close to the surface of the buffer layer.
According to the gallium nitride sensor, the piezoelectric polarization and self-polarization effects of the heterostructure formed by the barrier layer and the channel layer are utilized, two-dimensional electron gas (2 DEG) can be induced at the interface of the channel layer, after voltage is applied to the source-drain metal layer, the 2DEG with high conductivity is used as a heater through Joule heating to heat the cantilever in situ, when gas with high heat conductivity flows through the cantilever, the gas takes away part of heat to reduce the temperature of the 2DEG, the channel mobility of the gallium nitride sensor is increased, and the piezoelectric effect is enhanced, so that the source leakage current is improved. By detecting the change of the cantilever current, the specificity detection and the content detection of the high-heat-conductivity gas are realized. The cantilever is suspended, so that heat can be prevented from being dissipated from the substrate, and the power consumption of the device is reduced.
According to some embodiments of the application, the electrodes include a first heating electrode and a first detection electrode, the first heating electrode and the first detection electrode being disposed at both ends of the gallium nitride sensor in a first direction; the cantilever comprises a first section and a second section, one end of the first section is connected with the first heating electrode, one end of the second section is connected with the first detection electrode, and the other end of the first section is connected with the other end of the second section.
According to some embodiments of the application, the electrode further comprises a second heating electrode and a second detecting electrode, the first heating electrode and the second heating electrode are disposed at two ends of the gallium nitride sensor along a second direction, the first detecting electrode and the second detecting electrode are disposed at two ends of the gallium nitride sensor along the second direction, and the first direction and the second direction intersect; the cantilever also comprises a third section and a fourth section, one end of the third section is connected with the second heating electrode, one end of the fourth section is connected with the second detection electrode, and the other end of the third section is connected with the other end of the fourth section.
According to some embodiments of the application, the substrate has a thickness of 100 μm to 1000 μm.
According to some embodiments of the application, the buffer layer has a thickness of 1.4 μm to 5 μm.
According to some embodiments of the application, the channel layer has a thickness of 0.1 μm to 0.5 μm.
According to some embodiments of the application, the barrier layer has a thickness of 10nm-50nm.
According to some embodiments of the application, the cap layer has a thickness of 1nm to 5nm.
According to some embodiments of the application, the passivation layer has a thickness of 50nm-600nm.
According to some embodiments of the application, the materials forming the buffer layer, the channel layer, and the cap layer each independently comprise GaN.
According to some embodiments of the application, the source drain metal layer is formed of a material comprising at least one of Ti, al, W, cr, ni, pt or Au.
According to some embodiments of the application, the material forming the passivation layer comprises at least one of SiO 2、Si3N4 or Al 2O3.
In another aspect of the present application, a method for preparing the gallium nitride sensor according to the first aspect of the present application is provided, including: providing a substrate; forming a buffer layer, a channel layer, a barrier layer, a cap layer, a source-drain metal layer and a passivation layer on one side of the substrate in sequence, wherein the channel layer and the barrier layer form a heterojunction, and the passivation layer covers part of the surface of the channel layer, part of the surface of the metal layer and at least part of the surface of the cap layer; forming an electrode, wherein the electrode is arranged on one side of the source-drain metal layer, which is away from the substrate, and covers at least part of the surface of the source-drain metal layer and part of the surface of the channel layer; and forming a plurality of through holes, wherein the through holes penetrate through the passivation layer, the cap layer, the barrier layer, the channel layer and the buffer layer, two adjacent through holes are arranged at intervals, a cantilever is formed between the through holes, and the cantilever and the substrate are arranged at intervals close to the surface of the buffer layer. Therefore, the method is simple in process, easy to integrate and expand, convenient for large-scale circuit connection and high-flux gas detection, and the prepared gallium nitride sensor can realize the specific detection and content detection of high-heat-conductivity gas.
According to some embodiments of the application, the method comprises: sequentially forming a whole original buffer layer, a whole original channel layer, a whole original barrier layer and a whole original cap layer on one side of an original substrate; performing first etching on the original cap layer, the original barrier layer and part of the original channel layer to form a patterned cap layer, a patterned barrier layer and a patterned channel layer; forming a whole original source drain metal layer on one side of the patterned channel layer, which is away from the substrate, wherein the original source drain metal layer covers the patterned cap layer and the exposed patterned channel layer, and stripping the original source drain metal layer for the first time to form the source drain metal layer; performing second etching on the original buffer layer, the patterned channel layer, the patterned barrier layer and the patterned cap layer to form a plurality of through holes; forming a whole original passivation layer on one side of the channel layer, which is away from the substrate, and performing third etching on the original passivation layer to form the passivation layer; forming a whole original electrode layer on one side of the passivation layer, which is away from the substrate, and stripping the original electrode layer for the second time to form the electrode layer; and etching the original substrate for the fourth time through the through hole.
According to some embodiments of the application, the second stripping further comprises: forming a first heating electrode and a first detection electrode, wherein the first heating electrode and the first detection electrode are arranged at two ends of the gallium nitride sensor along a first direction, and the second etching further comprises: a first section and a second section of the cantilever are formed, one end of the first section is connected with one end of the second section, the other end of the first section is connected with the first heating electrode, and the other end of the second section is connected with the first detection electrode; and/or the second stripping further comprises: forming a second heating electrode and a second detection electrode, wherein the first heating electrode and the second heating electrode are arranged at two ends of the gallium nitride sensor along a second direction, the first detection electrode and the second detection electrode are arranged at two ends of the gallium nitride sensor along the second direction, and the first direction and the second direction are intersected; the second etching further includes: and a third section and a fourth section of the cantilever are formed, one end of the third section is connected with one end of the fourth section, the other end of the third section is connected with the second heating electrode, and the other end of the fourth section is connected with the second detection electrode.
According to some embodiments of the application, the first etching, the second etching, and the third etching are performed using an inductively coupled plasma etching process.
According to some embodiments of the application, the fourth etching is an isotropic etching.
In yet another aspect of the present application, a hydrogen gas detection device is provided, including the gallium nitride sensor according to the first aspect of the present application.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
fig. 1 shows a schematic structural diagram of a gallium nitride sensor according to an embodiment of the present application.
Fig. 2 shows a schematic diagram of hydrogen detection of the gallium nitride sensor of fig. 1.
Fig. 3 shows a top view of the gallium nitride sensor of fig. 1.
Fig. 4 shows a schematic flow chart of a gallium nitride sensor according to an embodiment of the application.
Fig. 5 shows a schematic diagram of the hydrogen detection process of the gallium nitride sensor in fig. 1.
Reference numerals:
1: a gallium nitride sensor; 11: a substrate; 11": an original substrate; 12: a buffer layer; 12": an original buffer layer; 13: a channel layer; 13": an original channel layer; 13': patterning the channel layer; 14: a barrier layer; 14": an original barrier layer; 14': patterning the barrier layer; 15: a cap layer; 15": an original cap layer; 15': patterning the cap layer; 16: a source drain metal layer; 16": an original source drain metal layer; 17: a passivation layer; 17": an original passivation layer; 18: an electrode; 19: a through hole; 20: a cantilever; 181: a first heating electrode; 182: a first detection electrode; 183: a second heating electrode; 184: a second detection electrode; 201: a first section; 202: a second section; 203: a third section; 204: a fourth section; 205: a fifth section; 206: a sixth section; 207: a seventh section; 208: eighth section.
Detailed Description
Embodiments of the present invention are described in detail below. The following examples are illustrative only and are not to be construed as limiting the invention. The examples are not to be construed as limiting the specific techniques or conditions described in the literature in this field or as per the specifications of the product. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
In one aspect of the present application, a gallium nitride sensor 1 is proposed, referring to fig. 1 and2, the gallium nitride sensor 1 comprising: a substrate 11; the buffer layer 12, the channel layer 13, the barrier layer 14, the cap layer 15 and the source-drain metal layer 16 are sequentially arranged on one side of the substrate 11, and the channel layer 13 and the barrier layer 14 form a heterojunction; a passivation layer 17, the passivation layer 17 covering a portion of the surface of the channel layer 13, a portion of the surface of the metal layer, and at least a portion of the surface of the cap layer 15; an electrode 18, the electrode 18 being disposed on a side of the source-drain metal layer 16 facing away from the substrate 11, the electrode 18 covering at least a portion of a surface of the source-drain metal layer 16 and a portion of a surface of the channel layer 13; the through holes 19 penetrate through the passivation layer 17, the cap layer 15, the barrier layer 14, the channel layer 13 and the buffer layer 12, two adjacent through holes 19 are arranged at intervals, a cantilever 20 is formed between the through holes 19, and the cantilever 20 and the substrate 11 are arranged at intervals close to the surface of the buffer layer 12.
The gallium nitride sensor 1 according to the present application can induce a two-dimensional electron gas (2 DEG) at the interface of the channel layer 13 by utilizing the piezoelectric polarization and self-polarization effects of the heterostructure formed by the barrier layer 14 and the channel layer 13. In the gas detection process, a voltage is applied to the source-drain metal layer 16, the high-conductivity 2DEG is used as a heater through joule heating, the cantilever 20 is heated in situ, when gas with higher thermal conductivity flows through the cantilever 20, the gas takes away part of heat to reduce the temperature of the 2DEG, the channel mobility of the gallium nitride sensor 1 is increased, and the piezoelectric effect is enhanced, so that the source-drain current is improved. By detecting the change of the cantilever 20 current, the specific detection and content detection of the high thermal conductivity gas are realized. The cantilever 20 of the gallium nitride sensor 1 provided by the application is arranged in a suspending way, so that heat can be prevented from being dissipated from the substrate 11, and the power consumption of the device is reduced.
According to some embodiments of the present application, referring to fig. 3, the electrode 18 may include a first heating electrode 181 and a first detecting electrode 182, the first heating electrode 181 and the first detecting electrode 182 being disposed at both ends of the gallium nitride sensor 1 in a first direction; the cantilever 20 includes a first section 201 and a second section 202, one end of the first section 201 is connected to the first heating electrode 181, one end of the second section 202 is connected to the first detecting electrode 182, and the other end of the first section 201 is connected to the other end of the second section 202. Specifically, in the gas detection process, voltages are applied to the first heating electrode 181 and the first detecting electrode 182 respectively to heat the first section 201 and the second section 202 of the cantilever 20, after the temperature of the cantilever 20 is stable, the gas to be detected is introduced above the gallium nitride sensor 1, and the gas to be detected flowing through the through hole 19 can rapidly take away heat to reduce the temperature of the cantilever 20, so that the channel mobility and the piezoelectric effect of the device are increased, the detection current is increased, and the specific detection and the content detection of the gas with high thermal conductivity are realized through the change of the current.
According to some embodiments of the present application, referring to fig. 3, a fifth section 205 and a sixth section 206 may be further included between the first section 201 and the second section 202, one end of the first section 201 is connected to the first heating electrode 181, one end of the second section 202 is connected to the first detection electrode 182, one end of the fifth section 205 is connected to the other end of the first section 201, the other end of the fifth section 205 is connected to one end of the sixth section 206, and the other end of the sixth section 206 is connected to the other end of the second section 202. Thereby increasing the area of the cantilever 20 and improving the mechanical robustness of the cantilever.
According to some embodiments of the application, the flow rate of the gas to be measured may be 0.001m 3/h～1m3/h.
According to some embodiments of the application, the high thermal conductivity gas comprises hydrogen.
According to some embodiments of the present application, referring to fig. 3, the electrode 18 may further include a second heating electrode 183 and a second detecting electrode 184, the first heating electrode 181 and the second heating electrode 183 being disposed at both ends of the gallium nitride sensor 1 in a second direction, the first detecting electrode 182 and the second detecting electrode 184 being disposed at both ends of the gallium nitride sensor 1 in the second direction, the first direction and the second direction intersecting; the cantilever 20 may further include a third section 203 and a fourth section 204, wherein one end of the third section 203 is connected to the second heating electrode 183, one end of the fourth section 204 is connected to the second detecting electrode 184, and the other end of the third section 203 is connected to the other end of the fourth section 204. Specifically, in the gas detection process, voltages are applied to the first heating electrode 181, the second heating electrode 183, the first detection electrode 182 and the second detection electrode 184 respectively to heat the first section 201, the second section 202, the third section 203 and the fourth section 204 of the cantilever 20, after the temperature of the cantilever 20 is stable, the gas to be detected is introduced above the gallium nitride sensor 1, and the gas to be detected flowing through the through hole 19 can rapidly take away heat to reduce the temperature of the cantilever 20, so that the channel mobility and the piezoelectric effect of the device are increased, the detection current is increased, and the specific detection and the content detection of the gas with high thermal conductivity are realized through the change of the current. Thereby, heating efficiency is improved, and detection accuracy is improved.
According to some embodiments of the present application, referring to fig. 3, the cantilever 20 may further include a seventh section 207 and an eighth section 208, one end of the third section 203 is connected to the second heating electrode 183, one end of the fourth section 204 is connected to the second detecting electrode 184, one end of the seventh section 207 is connected to the other end of the third section 203, the other end of the seventh section 207 is connected to one end of the eighth section 208, and the other end of the eighth section 208 is connected to the other end of the fourth section 204. Thereby, the area of the cantilever 20 is increased, and after the cantilever 20 is heated, the uniformity of the temperature distribution of the cantilever 20 is improved, and the mechanical robustness of the cantilever 20 is increased.
According to some embodiments of the application, the thickness of the substrate 11 may be 100 μm-1000 μm, for example, 100 μm, 300 μm, 500 μm, 700 μm, 900 μm or 1000 μm, etc., or may be in the range of any of the numerical compositions mentioned above.
According to some embodiments of the application, the thickness of the buffer layer 12 may be 1.4 μm-5 μm, for example, may be 1.4 μm, 2 μm, 3 μm, 4 μm, 5 μm, etc., or may be in the range of any of the numerical compositions described above.
According to some embodiments of the present application, the thickness of the channel layer 13 may be 0.1 μm to 0.5 μm, for example, may be 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, or 0.5 μm, etc., or may be in the range of any of the numerical compositions described above.
According to some embodiments of the application, the barrier layer 14 may have a thickness of 10nm-50nm, for example, 10nm, 20nm, 30nm, 40nm, 50nm, etc., or may have a range of any of the above values.
According to some embodiments of the application, the cap layer 15 may have a thickness of 1nm-5nm, for example, 1nm, 2nm, 3nm, 4nm, 5nm, etc., or may have a range of any of the above values.
According to some embodiments of the application, the passivation layer 17 may have a thickness of 50nm-600nm, for example, 50nm, 100nm, 200nm, 300nm, 400nm, 500nm or 600nm, etc., or may have a range of any of the above values.
According to some embodiments of the present application, the materials forming the buffer layer 12, the channel layer 13, and the cap layer 15 independently include GaN. According to some embodiments of the application, the material forming the barrier layer 14 may comprise AlGaN. Thus, the AlGaN/GaN heterostructure can produce a high electron mobility 2DEG at the interface of the channel layer 13.
According to some embodiments of the application, the material forming the source drain metal layer 16 comprises at least one of Ti, al, W, cr, ni, pt or Au.
According to some embodiments of the application, the material forming the passivation layer 17 comprises at least one of SiO 2、Si3N4 or Al 2O3.
In another aspect of the present application, a method of preparing the aforementioned gallium nitride sensor 1 is presented, referring to fig. 4, the method comprising:
s100: providing a raw substrate 11'
According to some embodiments of the present application, the material of the original substrate 11 "may be silicon.
According to some embodiments of the present application, the silicon substrate 11 includes a P-type silicon substrate 11 or an N-type silicon substrate 11.
S200: a whole original buffer layer 12 ', a whole original channel layer 13 ', a whole original barrier layer 14 ', and a whole original cap layer 15 ' are sequentially formed on one side of the original substrate 11 ', and "
According to some embodiments of the present application, an entire original buffer layer 12", an entire original channel layer 13", an entire original barrier layer 14 "and an entire original cap layer 15" are sequentially formed on one side of the original substrate 11", and the original cap layer 15", the original barrier layer 14 "and a portion of the original channel layer 13" are etched for the first time to form a patterned cap layer 15', a patterned barrier layer 14' and a patterned channel layer 13', and electrical isolation is made by the first etching.
According to some embodiments of the application, the first etching may employ an inductively coupled plasma etching process.
S300: forming a whole original source drain metal layer 16 'on one side of the patterned channel layer 13' away from the substrate 11 "
According to some embodiments of the present application, an entire original source drain metal layer 16 "is formed on a side of the patterned channel layer 13' facing away from the substrate 11, the original source drain metal layer 16" covers the patterned cap layer 15' and the exposed patterned channel layer 13', and the original source drain metal layer 16 "is stripped for the first time to form the source drain metal layer 16.
S400: performing a second etching on the original buffer layer 12 ', the patterned channel layer 13', the patterned barrier layer 14' and the patterned cap layer 15
According to some embodiments of the present application, the original buffer layer 12", the patterned channel layer 13', the patterned barrier layer 14' and the patterned cap layer 15' are etched a second time to form a plurality of the vias 19.
According to some embodiments of the application, the second etching may employ an inductively coupled plasma etching process.
According to some embodiments of the application, the second etching may further include: a first section 201 and a second section 202 of the cantilever 20 are formed, one end of the first section 201 is connected to one end of the second section 202, the other end of the first section 201 is connected to the first heating electrode 181, and the other end of the second section 202 is connected to the first detecting electrode 182.
According to some embodiments of the application, the second etching may further include: a third section 203 and a fourth section 204 of the cantilever 20 are formed, one end of the third section 203 is connected to one end of the fourth section 204, the other end of the third section 203 is connected to the second heating electrode 183, and the other end of the fourth section 204 is connected to the second detecting electrode 184.
S500: forming an entire original passivation layer 17' on the side of the channel layer 13 facing away from the substrate 11 "
According to some embodiments of the present application, an entire original passivation layer 17″ is formed on a side of the channel layer 13 facing away from the substrate 11, and the original passivation layer 17″ is etched a third time to form the passivation layer 17.
According to some embodiments of the application, the third etching may be performed using an inductively coupled plasma etching process.
S600: an entire original electrode layer (not shown) is formed on the side of the passivation layer 17 facing away from the substrate 11
According to some embodiments of the present application, an entire original electrode layer is formed on the side of the passivation layer 17 facing away from the substrate 11, and the original electrode layer is stripped for the second time to form the electrode 18.
According to some embodiments of the application, the second stripping may include: a first heating electrode 181 and a first detection electrode 182 are formed, the first heating electrode 181 and the first detection electrode 182 being disposed at both ends of the gallium nitride sensor 1 in a first direction.
According to some embodiments of the application, the second stripping may further comprise: a second heating electrode 183 and a second detecting electrode 184 are formed, the first heating electrode 181 and the second heating electrode 183 being disposed at both ends of the gallium nitride sensor 1 in a second direction, the first detecting electrode 182 and the second detecting electrode 184 being disposed at both ends of the gallium nitride sensor 1 in the second direction, the first direction intersecting the second direction.
S700: etching the original substrate 11' for the fourth time
According to some embodiments of the application, the original substrate 11 "is etched a fourth time through the via 19.
According to some embodiments of the application, the fourth etching may be an isotropic etching.
According to some embodiments of the application, the etching gas flow during the isotropic etching may be 200sccm-300sccm, for example, 200sccm, 220sccm, 240sccm, 260sccm, 280sccm, 300sccm, etc., or may be in the range of any of the above values.
According to some embodiments of the application, the etch pressure during the isotropic etching may be 1mBar-4mBar, e.g., 1mBar, 1.5mBar, 2mBar, 2.5mBar, 3mBar, 3.5mBar, 4mBar, etc., or may be in the range of any of the values mentioned above.
In a second aspect of the present application, a hydrogen gas detection device is provided, comprising the aforementioned gallium nitride sensor 1. The hydrogen detection device provided by the application can specifically identify hydrogen and detect the hydrogen content.
Example 1
(1) Providing a 6-inch single-sided polished Si substrate, wherein the thickness is 500 mu m, and the doping type is N type;
(2) Sequentially forming a 1.4 mu m GaN buffer layer, a 500nm GaN channel layer, a 25nm AlGaN barrier layer and a 2nm GaN cap layer on the polished surface of the Si substrate;
(3) Manufacturing electrical isolation by partially etching the GaN material, depositing a metal layer (Ti/Al/Ti/Au) and patterning, and performing high-temperature nitrogen annealing treatment to form ohmic contact;
(4) Locally etching GaN to the Si substrate and patterning to determine the shape of the cantilever;
(5) Depositing 300nmSiO 2 passivation layer, partially etching and patterning to expose windows required by the heating electrode and the detection electrode;
(6) Depositing metal Ti/Au and patterning to prepare a heating electrode and a detection electrode;
(7) And (3) performing isotropic etching by using XeF 2 to manufacture a cantilever, wherein the etching gas flow is 240sccm, and the etching pressure is 2.5mBar.
Referring to fig. 5, voltages are applied to a heating electrode and a detecting electrode, respectively, input power is 65mW, and a cantilever is heated and stabilized at 200 ℃, wherein the voltage applied to the detecting electrode is 15V, the hydrogen flow is 0.1m 3/h, and hydrogen with high thermal conductivity can rapidly take away heat to reduce the temperature of the cantilever, so that the channel mobility of the device is greatly increased and the piezoelectric effect is remarkably enhanced, thereby causing rapid increase of detecting current and realizing specific detection of hydrogen and concentration detection of hydrogen.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (10)
1. A gallium nitride sensor, comprising:
A substrate;
the buffer layer, the channel layer, the barrier layer, the cap layer and the source-drain metal layer are sequentially arranged on one side of the substrate, and the channel layer and the barrier layer form a heterojunction;
A passivation layer covering a portion of the surface of the channel layer, a portion of the surface of the metal layer, and at least a portion of the surface of the cap layer;
the electrode is arranged on one side of the source-drain metal layer, which is away from the substrate, and covers at least part of the surface of the source-drain metal layer and part of the surface of the channel layer;
the through holes penetrate through the passivation layer, the cap layer, the barrier layer, the channel layer and the buffer layer, two adjacent through holes are arranged at intervals, a cantilever is formed between the through holes, and the cantilever and the substrate are arranged at intervals close to the surface of the buffer layer.
2. The gallium nitride sensor according to claim 1, wherein the electrodes include a first heating electrode and a first detection electrode, the first heating electrode and the first detection electrode being disposed at both ends of the gallium nitride sensor in a first direction;
The cantilever comprises a first section and a second section, one end of the first section is connected with the first heating electrode, one end of the second section is connected with the first detection electrode, and the other end of the first section is connected with the other end of the second section.
3. The gallium nitride sensor according to claim 2, wherein the electrodes further comprise a second heating electrode and a second detecting electrode, the first heating electrode and the second heating electrode being disposed at both ends of the gallium nitride sensor in a second direction, the first detecting electrode and the second detecting electrode being disposed at both ends of the gallium nitride sensor in the second direction, the first direction and the second direction intersecting;
the cantilever also comprises a third section and a fourth section, one end of the third section is connected with the second heating electrode, one end of the fourth section is connected with the second detection electrode, and the other end of the third section is connected with the other end of the fourth section.
4. A gallium nitride sensor according to any of claims 1-3, wherein at least one of the following conditions is met:
the thickness of the substrate is 100-1000 mu m;
The thickness of the buffer layer is 1.4-5 mu m;
the thickness of the channel layer is 0.1-0.5 mu m;
The thickness of the barrier layer is 10nm-50nm;
The thickness of the cap layer is 1nm-5nm;
The thickness of the passivation layer is 50nm-600nm.
5. A gallium nitride sensor according to any of claims 1-3, wherein at least one of the following conditions is met:
Materials forming the buffer layer, the channel layer and the cap layer respectively and independently comprise GaN;
the material for forming the source-drain metal layer comprises at least one of Ti, al, W, cr, ni, pt or Au;
The material forming the passivation layer includes at least one of SiO 2、Si3N4 or Al 2O3.
6. A method of making the gallium nitride sensor of any one of claims 1-5, comprising:
Providing a substrate;
Forming a buffer layer, a channel layer, a barrier layer, a cap layer, a source-drain metal layer and a passivation layer on one side of the substrate in sequence, wherein the channel layer and the barrier layer form a heterojunction, and the passivation layer covers part of the surface of the channel layer, part of the surface of the metal layer and at least part of the surface of the cap layer;
forming an electrode, wherein the electrode is arranged on one side of the source-drain metal layer, which is away from the substrate, and covers at least part of the surface of the source-drain metal layer and part of the surface of the channel layer;
And forming a plurality of through holes, wherein the through holes penetrate through the passivation layer, the cap layer, the barrier layer, the channel layer and the buffer layer, two adjacent through holes are arranged at intervals, a cantilever is formed between the through holes, and the cantilever and the substrate are arranged at intervals close to the surface of the buffer layer.
7. The method according to claim 6, characterized in that the method comprises:
Sequentially forming a whole original buffer layer, a whole original channel layer, a whole original barrier layer and a whole original cap layer on one side of an original substrate, and performing first etching on the original cap layer, the original barrier layer and part of the original channel layer to form a patterned cap layer, a patterned barrier layer and a patterned channel layer;
forming a whole original source drain metal layer on one side of the patterned channel layer, which is away from the substrate, wherein the original source drain metal layer covers the patterned cap layer and the exposed patterned channel layer, and stripping the original source drain metal layer for the first time to form the source drain metal layer;
Performing second etching on the original buffer layer, the patterned channel layer, the patterned barrier layer and the patterned cap layer to form a plurality of through holes;
forming a whole original passivation layer on one side of the channel layer, which is away from the substrate, and performing third etching on the original passivation layer to form the passivation layer;
forming a whole original electrode layer on one side of the passivation layer, which is away from the substrate, and stripping the original electrode layer for the second time to form the electrode layer;
and etching the original substrate for the fourth time through the through hole.
8. The method of claim 7, wherein the second stripping further comprises: forming a first heating electrode and a first detection electrode, wherein the first heating electrode and the first detection electrode are arranged at two ends of the gallium nitride sensor along a first direction, and the second etching further comprises: a first section and a second section of the cantilever are formed, one end of the first section is connected with one end of the second section, the other end of the first section is connected with the first heating electrode, and the other end of the second section is connected with the first detection electrode; and/or
The second stripping further comprises: forming a second heating electrode and a second detection electrode, wherein the first heating electrode and the second heating electrode are arranged at two ends of the gallium nitride sensor along a second direction, the first detection electrode and the second detection electrode are arranged at two ends of the gallium nitride sensor along the second direction, and the first direction and the second direction are intersected; the second etching further includes: and a third section and a fourth section of the cantilever are formed, one end of the third section is connected with one end of the fourth section, the other end of the third section is connected with the second heating electrode, and the other end of the fourth section is connected with the second detection electrode.
9. The method according to claim 7 or 8, characterized in that at least one of the following conditions is fulfilled:
The first etching, the second etching and the third etching are etched by adopting an inductively coupled plasma etching process;
And isotropic etching is adopted for the fourth etching.
10. A hydrogen gas detection apparatus comprising a gallium nitride sensor according to any one of claims 1 to 5.
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