CN117457715A - Low-current collapse silicon-based GaN radio frequency epitaxial structure and manufacturing method thereof - Google Patents
Low-current collapse silicon-based GaN radio frequency epitaxial structure and manufacturing method thereof Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 24
- 239000010703 silicon Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 230000004888 barrier function Effects 0.000 claims abstract description 61
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000006911 nucleation Effects 0.000 claims abstract description 17
- 238000010899 nucleation Methods 0.000 claims abstract description 17
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 15
- 230000015556 catabolic process Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 claims description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- 230000007547 defect Effects 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 2
- 229920006395 saturated elastomer Polymers 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 7
- 230000005764 inhibitory process Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 2
- 238000003949 trap density measurement Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Abstract
The invention discloses a low-current collapsed silicon-based GaN radio frequency epitaxial structure and a manufacturing method thereof. The epitaxial structure comprises a Si substrate, an AlN nucleation layer, an AlGaN buffer layer, an Fe doped GaN layer, a GaN buffer layer, an AlGaN gradient back barrier layer, a GaN channel layer, an AlN barrier layer and a GaN cap layer which are sequentially laminated from bottom to top. According to the invention, the AlGaN gradient back barrier layer is grown, so that the barrier height below the channel layer is raised, the electric leakage of the buffer layer is reduced, and the current collapse of the device is effectively inhibited; on the other hand, the mobility of the 2DEG is improved while the higher 2DEG concentration is ensured, and the saturated drain current of the device is raised. By using extremely low Ga source flow, an ultrathin GaN cap layer with good surface morphology is grown, so that the gate leakage and current collapse are effectively inhibited while the device is ensured to have high saturated drain current.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a low-current collapsed silicon-based GaN radio frequency epitaxial structure and a manufacturing method thereof.
Background
The GaN-based semiconductor material has great advantages in the aspects of high-frequency and high-power application due to the advantages of high heat conductivity, high breakdown field strength, wide forbidden bandwidth, high electron saturation speed and the like. In recent years, gaN-based HEMT devices have been rapidly developed and have been widely used in the fields of aerospace, communication, etc., but many problems have been found in practical applications. Such as current collapse of the device in high temperature and high pressure environments, which seriously affects the reliability of the device. Khon et al propose a dummy gate model indicating that electrons tunnel to the surface of the device and are trapped by surface defects, forming a dummy gate, reducing the 2DEG concentration. In addition, researchers have found that 2DEG also overflows into buffer layer traps under high voltage bias, which also causes current collapse.
For traps on the surface of epitaxial wafers, a better processing mode is to introduce SiN x The cap layer or the GaN cap layer can passivate the surface of the device, change the density of surface defect states or the charge-discharge capacity, and inhibit current collapse. But GaN growth on AlN layers is mostly in a 3D-2D growth mode, which makes it more difficult to obtain good surface morphology for thinner GaN layers. Whereas a poor surface topography means a higher surface defectThe trap density directly affects the gate leakage and current collapse of the device. A common method is to grow a thicker GaN cap layer (2-3 nm), but this tends to reduce the polarization of the barrier layer, reducing the current level. It is therefore necessary to improve the cap growth quality by process tuning. For current collapse due to charge and discharge of buffer layer deep traps, alGaN back barrier layer can be suppressed by suppressing downward movement of 2 DEG. In general, the higher the thickness of the back barrier and the Al composition, the smaller the probability of electrons tunneling through the back barrier, and the better the suppression effect on current collapse. However, due to the smaller lattice constant of AlN than GaN, the higher Al composition or higher thickness of the AlGaN back barrier necessarily results in greater compressive stress to the channel GaN, which can severely affect the piezoelectric polarization of the heterojunction, reducing the 2DEG concentration (a semiconductor structure (CN 212136452U)).
Disclosure of Invention
Aiming at the problem of current collapse of a GaN-based HEMT, the invention provides a silicon-based GaN radio-frequency epitaxial structure with low current collapse and a manufacturing method thereof. The Si substrate is adopted instead of the SiC substrate, so that the cost can be effectively reduced. AlGaN gradient back barrier layer is grown, breakdown voltage is improved, and current collapse caused by deep energy level charge and discharge of the buffer layer is inhibited while higher 2DEG concentration is ensured. The growth process of the GaN cap layer is adjusted, and the ultra-thin GaN cap layer with good surface appearance is epitaxially grown through extremely low trimethyl gallium flow, so that current breakdown caused by charge and discharge of surface defect states is inhibited.
The object of the invention is achieved by at least one of the following technical solutions.
A low-current collapsed silicon-based GaN radio frequency epitaxial structure comprises a Si substrate, an AlN nucleation layer, an AlGaN buffer layer, an Fe-doped GaN layer, a GaN buffer layer, an AlGaN gradient back barrier layer, a GaN channel layer, an AlN barrier layer and a GaN cap layer which are sequentially laminated from bottom to top;
wherein the AlGaN gradient back barrier layer comprises a plurality of layers of Al with the Al components gradually increasing from bottom to top in an equal gradient manner x Ga 1-x N layers of each Al x Ga 1-x The growth time of the N layers is the same, and x is an Al component; alGaN gradient back barrier layer pair device under same thicknessThe breakdown voltage improvement and current collapse inhibition effects of the component are similar to those of the conventional fixed component Al 0.5 Ga 0.5 The N back barrier is close but has less negative effect on the 2DEG concentration;
the GaN cap layer grows at a set trimethylgallium flow rate of 2-30sccm/min, so that the growth quality is improved, and the surface root mean square roughness (5 mm multiplied by 5 mm) is not higher than 0.21nm;
the Fe doped GaN layer is a GaN layer doped with Fe so as to inhibit the electric leakage of a buffer layer of the device and improve the breakdown voltage of the device.
Further, the AlN nucleation layer, the AlGaN buffer layer, the Fe doped GaN layer, the GaN buffer layer, the AlGaN gradient back barrier layer, the GaN channel layer, the AlN barrier layer and the GaN cap layer are all grown by adopting a metal organic chemical vapor deposition technology.
Further, the Si substrate has a size of 6inch, a thickness of 1000 μm, and a resistivity of 5000 Ω·cm or more.
Further, the AlN nucleation layer is 100-150nm thick and grows on the Si substrate.
Further, the AlGaN buffer layer has a thickness of 300-400nm and an Al composition of 0.25-0.35, and grows on the AlN nucleation layer.
Further, the thickness of the Fe doped GaN layer is 600-700nm, and the Fe doped GaN layer grows on the AlGaN buffer layer.
Further, the thickness of the GaN buffer layer is 400-600nm, and the GaN buffer layer grows on the Fe doped GaN layer.
Further, the thickness of the AlGaN gradient back barrier layer is 10-20nm, and each layer of Al x Ga 1-x The growth time of the N layers is the same, and each layer of Al is from bottom to top x Ga 1-x The Al component x of the N layer is increased from 0 gradient to 1, and the component gradient can be selected according to specific requirements and grows on the GaN buffer layer.
Further, the thickness of the GaN channel layer is 180-220nm, and the GaN channel layer grows on the AlGaN gradient back barrier layer.
Further, the AlN barrier layer has a thickness of 7-12nm and grows on the GaN channel layer.
Further, the GaN capThe thickness of the layer is 0.2-1nm, the flow rate of trimethylgallium is controlled to be 2-30sccm/min in the growth process, and NH is controlled 3 The flow rate is 2-20slm/min, and grows on the AlN barrier layer.
A manufacturing method of a low-current collapsed silicon-based GaN radio frequency epitaxial structure comprises the following steps:
step one, placing a Si substrate in an MOCVD reaction cavity for high-temperature annealing treatment;
step two, pre-introducing trimethylaluminum for 10s in the set temperature and pressure environment;
step three, epitaxially growing an AlN nucleation layer on the Si substrate;
step four, epitaxially growing an AlGaN buffer layer on the AlN nucleation layer;
step five, epitaxially growing a Fe doped GaN layer on the AlGaN buffer layer, and introducing ferrocene to realize Fe doping;
step six, epitaxially growing a GaN buffer layer on the Fe-doped GaN high-resistance buffer layer, and not introducing ferrocene;
step seven, growing AlGaN gradient back barrier layers on the GaN buffer layer, wherein each layer of Al x Ga 1-x The growth time of the N layers is the same, the Al component is increased to 1 from 0 from bottom to top in an equal gradient manner, and the buffer layer leakage and the current collapse of the device can be effectively inhibited while the higher 2DEG concentration is ensured;
step eight, growing a GaN channel layer on the AlGaN gradient back barrier layer;
step nine, growing an AlN barrier layer on the GaN channel layer;
step ten, growing a GaN cap layer on the AlN barrier layer, controlling the flow rate of trimethylgallium to be 2-30sccm/min and NH 3 The flow rate is 2-20slm/min to form a film with good surface, and the defect density in the GaN cap layer is reduced, so that the effects of inhibiting the grid leakage and the current collapse of the device are achieved.
Compared with the prior art, the invention has the following advantages:
the invention provides a low-current-collapse silicon-based GaN radio-frequency epitaxial structure and a manufacturing method thereof aiming at two parameters of saturated drain current and current collapse of a GaN-based HEMT device. On the one hand, alGaN gradient is grownBack barrier, al component gradually increases from bottom to top and each layer of Al x Ga 1-x The N growth time is the same. At the same thickness, the breakdown promotion and current collapse inhibition effects on the device are similar to those of the traditional fixed component Al 0.5 Ga 0.5 The N back barrier is close but has less negative effect on the 2DEG concentration. On the other hand, the growth process of the GaN cap layer is optimized, the growth is carried out by adopting extremely low trimethylgallium flow rate (2-30 sccm/min), the surface morphology is optimized, the surface trap density is reduced, and the current collapse is further inhibited.
Drawings
FIG. 1 is a schematic diagram of a low current collapsed silicon-based GaN radio frequency epitaxial structure in an embodiment of the invention;
FIG. 2 is a graph showing the flow rate of trimethylaluminum and trimethylgallium flowing in time during epitaxial growth of the gradient AlGaN back barrier layer (6) of example 1 of the present invention;
FIG. 3 is a graph showing the flow rate of trimethylaluminum and trimethylgallium flowing in time during epitaxial growth of the gradient AlGaN back barrier layer (6) of example 2 of the present invention;
fig. 4 is a graph showing the output characteristics and pulse I-V characteristics of the devices fabricated in examples 1 and 2 of the present invention.
Detailed Description
For a further understanding of the present invention, specific implementations of the invention are described further below with reference to the drawings and examples, but embodiments of the invention are not limited thereto. It is noted that processes or process parameters, if not specifically specified herein, can be successfully implemented by those skilled in the art with reference to the prior art.
The low-current-collapse silicon-based GaN radio-frequency epitaxial structure shown in FIG. 1 comprises a Si substrate 1, an AlN nucleation layer 2, an AlGaN buffer layer 3, an Fe-doped GaN layer 4, a GaN buffer layer 5, an AlGaN gradient back barrier layer 6, a GaN channel layer 7, an AlN barrier layer 8 and a GaN cap layer 9 which are sequentially stacked from bottom to top, wherein the crystal direction of the Si substrate is (111);
wherein the AlGaN gradient back barrier layer 6 comprises a plurality of layers of Al with the Al composition gradually increasing from bottom to top in an equal gradient manner x Ga 1-x N layers of each Al x Ga 1-x The growth time of the N layers is the same, and x is an Al component; under the same thickness, the breakdown voltage promotion and current collapse inhibition effects of the AlGaN gradient back barrier layer 6 on the device are equal to those of the conventional fixed component Al 0.5 Ga 0.5 The N back barrier is close but has less negative effect on the 2DEG concentration;
the GaN cap layer 9 grows at a set trimethylgallium flow rate of 2-30sccm/min, so that the growth quality is improved, and the surface root mean square roughness (5 mm multiplied by 5 mm) is not higher than 0.21nm;
the Fe-doped GaN layer 4 is a GaN layer doped with Fe so as to improve the breakdown voltage of the device.
Example 1:
a manufacturing method of a low-current collapsed silicon-based GaN radio frequency epitaxial structure comprises the following steps:
and step one, placing the 6inch high-resistance Si substrate 1 into an MOCVD reaction cavity for high-temperature annealing treatment at 1090 ℃ for 10min.
Step two, pre-introducing trimethylaluminum at 1090 ℃ under the pressure of 75Torr for 10s.
And thirdly, epitaxially growing an AlN nucleation layer on the Si substrate 1 for 37min, wherein the growth thickness is 150nm.
And step four, epitaxially growing an AlGaN buffer layer 3 on the AlN nucleation layer 2, wherein the Al component is 0.30, the corresponding growth time is 40min, and the growth thickness is 400nm.
Step five, epitaxially growing an Fe doped GaN layer 4 on the AlGaN buffer layer 3, and introducing ferrocene to realize Fe doping, wherein the doping concentration is 6 multiplied by 10 17 cm -2 The growth time is 16min, and the growth thickness is 640nm.
And step six, epitaxially growing a GaN buffer layer 5 on the Fe-doped GaN layer 4, and growing for 14min without introducing ferrocene, wherein the growing thickness is 560nm.
Step seven, growing an AlGaN gradient back barrier layer 6 on the GaN buffer layer 5, wherein each layer of Al of the AlGaN gradient back barrier layer 6 x Ga 1-x The Al component of the N layer is 0/0.33/0.66/1 from bottom to top, the growth time of each section is 2min, and the total thickness of the growth is 20nm.
And step eight, growing a GaN channel layer 7 on the AlGaN gradient back barrier layer 6 for 5min, wherein the growth thickness is 200nm.
And step nine, growing an AlN barrier layer 8 on the GaN channel layer 7 for 120s, and growing the AlN barrier layer to a thickness of 8nm.
Step ten, growing a GaN cap layer 9 on the AlN barrier layer 8, controlling the flow rate of trimethylgallium to be 15sccm/min and NH 3 The flow rate is 10slm/min, the time is 50s, and the growth thickness is 1nm.
Thus, the preparation of the low-current collapsed silicon-based GaN radio frequency epitaxial structure is completed.
Example 2
A low-current collapsed silicon-based GaN radio frequency epitaxial structure and a manufacturing method thereof comprise the following steps:
and step one, placing the 6inch high-resistance Si substrate 1 into an MOCVD reaction cavity for high-temperature annealing treatment at 1090 ℃ for 10min.
Step two, pre-introducing trimethylaluminum at 1090 ℃ under the pressure of 75Torr for 10s.
And thirdly, epitaxially growing an AlN nucleation layer on the Si substrate 1 for 37min, wherein the growth thickness is 150nm.
And step four, epitaxially growing an AlGaN buffer layer 3 on the AlN nucleation layer 2, wherein the Al component is 0.30, the corresponding growth time is 40min, and the growth thickness is 400nm.
Step five, epitaxially growing an Fe doped GaN layer 4 on the AlGaN buffer layer 3, and introducing ferrocene to realize Fe doping, wherein the doping concentration is 6 multiplied by 10 17 cm -2 The growth time is 16min, and the growth thickness is 640nm.
And step six, epitaxially growing a GaN buffer layer 5 on the Fe-doped GaN layer 4, and growing for 14min without introducing ferrocene, wherein the growing thickness is 560nm.
Step seven, growing an AlGaN gradient back barrier layer 6 on the GaN buffer layer 5, wherein each layer of Al of the AlGaN gradient back barrier layer 6 x Ga 1-x The Al component of the N layer is 0/0.5/1 from bottom to top, the growth time of each section is 2min, and the growth thickness is 15nm.
And step eight, growing a GaN channel layer 7 on the AlGaN gradient back barrier layer 6 for 5min, wherein the growth thickness is 200nm.
And step nine, growing an AlN barrier layer 8 on the GaN channel layer 7 for 120s, and growing the AlN barrier layer to a thickness of 8nm.
Step ten, growing a GaN cap layer 9 on the AlN barrier layer 8, controlling the flow rate of trimethylgallium to be 15sccm/min and NH 3 The flow rate is 10slm/min, the time is 25s, and the growth thickness is 0.5nm.
Thus, the preparation of the low-current collapsed silicon-based GaN radio frequency epitaxial structure is completed.
This example 2 has a lower thickness of AlGaN gradient back barrier layer and a larger composition gradient, and a thinner GaN cap layer than example 1, which means a larger piezoelectric polarization intensity of channel GaN, a larger 2DEG concentration, and a larger saturated drain current. However, as the cap layer and the back barrier layer are thinned, the difficulty of vertical tunneling of electrons is reduced, and the current collapse of the device is larger.
Fig. 2 is a graph showing the flow rate of trimethylaluminum and trimethylgallium flowing in time during the epitaxial growth of the gradient AlGaN back barrier layer 6 according to embodiment 1 of the present invention;
fig. 3 is a graph showing the flow rate of trimethylaluminum and trimethylgallium flowing in time during the epitaxial growth of the gradient AlGaN back barrier layer 6 according to embodiment 2 of the present invention;
FIG. 4 is a graph showing the output characteristics and pulse I-V characteristics of the devices made in accordance with examples 1 and 2 of the present invention; wherein the saturated drain current of example 1 is higher than that of the HEMT of the conventional structure, the boost amplitude is about 9.6%. Wherein the current collapse (saturation current drop amplitude) of example 1 is about 22% and the current collapse of a conventional epitaxial structure HEMT is about 27%.
The above examples are only preferred embodiments of the present invention, and the scope of the present invention is not limited thereto. Various insubstantial modifications and variations can be made by those skilled in the art on the basis of the invention, which fall within the scope of the invention as claimed.
Claims (10)
1. A low-current collapsed silicon-based GaN radio frequency epitaxial structure is characterized in that: comprises a Si substrate (1) with a crystal orientation (111), an AlN nucleation layer (2), an AlGaN buffer layer (3), an Fe doped GaN layer (4), which are sequentially laminated from bottom to top a GaN buffer layer (5), an AlGaN gradient back barrier layer (6), a GaN channel layer (7), an AlN barrier layer (8) and a GaN cap layer (9);
wherein the AlGaN gradient back barrier layer (6) comprises a plurality of layers of Al with the Al components gradually increasing from bottom to top in an equal gradient manner x Ga 1-x N layers of each Al x Ga 1-x The growth time of the N layers is the same, and x is an Al component;
the GaN cap layer (9) grows at a set trimethylgallium flow rate, so that the growth quality is improved;
the Fe doped GaN layer (4) is a GaN layer doped with Fe so as to improve the breakdown voltage of the device.
2. A low current collapsed silicon-based GaN radio frequency epitaxial structure according to claim 1, wherein: the Si substrate (1) has a resistivity of 5000 Ω & cm or more.
3. A low current collapsed silicon-based GaN radio frequency epitaxial structure according to claim 1, wherein: the AlN nucleation layer (2) is 100-150nm thick and grows on the Si substrate (1).
4. A low current collapsed silicon-based GaN radio frequency epitaxial structure according to claim 1, wherein: the AlGaN buffer layer (3) has a thickness of 300-400nm and an Al component of 0.25-0.35, and grows on the AlN nucleation layer (2).
5. A low current collapsed silicon-based GaN radio frequency epitaxial structure according to claim 1, wherein: the thickness of the Fe doped GaN layer (4) is 600-700nm, and the Fe doped GaN layer grows on the AlGaN buffer layer (3);
the thickness of the GaN buffer layer (5) is 400-600nm, and the GaN buffer layer grows on the Fe doped GaN layer (4).
6. A low current collapsed silicon-based GaN radio frequency epitaxial structure according to claim 1, wherein: the total thickness of the AlGaN gradient back barrier layer (6) is 10-20nm, each layer of Al x Ga 1-x During the growth of the N layerAre the same from bottom to top x Ga 1-x The Al component x of the N layer is increased from 0 gradient to 1, and grows on the GaN buffer layer (5).
7. A low current collapsed silicon-based GaN radio frequency epitaxial structure according to claim 1, wherein: the thickness of the GaN channel layer (7) is 180-220nm, and the GaN channel layer grows on the AlGaN gradient back barrier layer (6).
8. A low current collapsed silicon-based GaN radio frequency epitaxial structure according to claim 1, wherein: the AlN barrier layer (8) has a thickness of 7-12nm and grows on the GaN channel layer (7).
9. A low current collapsed silicon-based GaN radio frequency epitaxial structure according to claim 1, wherein: the thickness of the GaN cap layer (9) is 0.2-1nm, the flow rate of trimethylgallium is controlled to be 2-30sccm/min in the growth process, and NH is controlled 3 The flow rate is 2-20slm/min, the surface root mean square roughness (5 mm multiplied by 5 mm) is not higher than 0.21nm on the AlN barrier layer (8).
10. A manufacturing method of a low-current collapsed silicon-based GaN radio frequency epitaxial structure is characterized by comprising the following steps of: the method comprises the following steps:
step one, placing a Si substrate (1) in an MOCVD reaction cavity for high-temperature annealing treatment;
step two, pre-introducing trimethylaluminum for 10s in the set temperature and pressure environment;
step three, epitaxially growing an AlN nucleation layer (2) on the Si substrate (1);
step four, epitaxially growing an AlGaN buffer layer (3) on the AlN nucleation layer (2);
step five, epitaxially growing an Fe doped GaN layer (4) on the AlGaN buffer layer (3), and introducing ferrocene to realize Fe doping;
step six, epitaxially growing a GaN buffer layer (5) on the Fe-doped GaN layer (4), and not introducing ferrocene;
step seven, growing an AlGaN gradient back barrier layer (6) on the GaN buffer layer (5),each layer of Al x Ga 1-x The growth time of the N layers is the same, the Al component is increased to 1 from 0 from bottom to top in an equal gradient manner, and the buffer layer leakage and the current collapse of the device can be effectively inhibited while the higher 2DEG concentration is ensured;
step eight, growing a GaN channel layer (7) on the AlGaN gradient back barrier layer (6);
step nine, growing an AlN barrier layer (8) on the GaN channel layer (7);
step ten, growing a GaN cap layer (9) on the AlN barrier layer (8), controlling the flow rate of trimethylgallium to be 2-30sccm/min and NH 3 The flow rate is 2-20slm/min to form a film with good surface, and the defect density in the GaN cap layer (9) is reduced.
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