CN117192634B - Correlation photoelectric sensor and assembly method thereof - Google Patents
Correlation photoelectric sensor and assembly method thereof Download PDFInfo
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Abstract
The application discloses a correlation photoelectric sensor and an assembling method thereof, wherein the assembling method comprises the steps of correspondingly arranging a transmitting end and a receiving end, arranging a VCSEL light source in the transmitting end, and arranging a light receiving element for sensing the VCSEL light source in the receiving end; adjusting the relative distance between the transmitting end and the receiving end, obtaining the minimum inductive optical power density threshold of the receiving end, and setting a transmitting end lens at the position of the transmitting end shell corresponding to the VCSEL light source so that the actual optical power density of the receiving end is larger than the minimum inductive optical power density threshold; and adjusting the VCSEL light source to enable the VCSEL light source to be within one focal length of the transmitting end lens. According to the correlation photoelectric sensor and the assembly method thereof provided by the application, the internal space structures of the transmitting end and the receiving end are effectively utilized, the whole volume of the sensor is reduced, and the detection distance between the transmitting end and the receiving end is greatly improved.
Description
Technical Field
The application belongs to the technical field of photoelectric sensors, and particularly relates to a correlation type photoelectric sensor and an assembly method thereof.
Background
The sensor is a detection component which is frequently used in an industrial field, and the working process of the industrial field is controlled by outputting an electric signal through the sensor. In many industrial sites, a sensor with high accuracy is required to be used as a signal acquisition end. The correlation type photoelectric sensor is a detection device which can sense the measured information and convert the sensed information into an electric signal or other information according to a certain rule so as to meet the requirements of information transmission, processing, storage, display, recording, control and the like, and is commonly used for realizing the detection of parts in compact and narrow spaces in the working process of modern industrial production automation equipment.
At present, most of opposite-emission type photoelectric sensors adopt an LED (Light-Emitting Diode) Light source, and in order to realize long-distance detection under the premise of larger divergence angle, the product thickness of the photoelectric sensor is required to be increased, or the luminous power of the Light source is increased, so that the power consumption of the photoelectric sensor is increased, the heat is easily generated, and the service life of the product is reduced. Therefore, how to realize detection with longer distance while reducing the volume of the sensor is a problem to be solved.
Disclosure of Invention
The application provides a correlation photoelectric sensor and an assembly method thereof, which are used for solving the problem of how to realize longer detection distance while reducing the volume of the sensor.
In order to solve the technical problems, the application provides a correlation photoelectric sensor assembly method, which comprises the following steps:
Arranging a transmitting end and a receiving end correspondingly, arranging a VCSEL light source in the transmitting end, and arranging a light receiving element used for sensing the VCSEL light source in the receiving end;
Adjusting the relative distance between the transmitting end and the receiving end, obtaining the minimum inductive optical power density threshold of the receiving end, and setting a transmitting end lens at the position of the transmitting end shell corresponding to the VCSEL light source so that the actual optical power density of the receiving end is larger than the minimum inductive optical power density threshold;
And adjusting the VCSEL light source to enable the VCSEL light source to be within one focal length of the transmitting end lens.
As a further improvement of the present application, said adjusting the relative distance between the transmitting end and the receiving end to obtain the minimum inductive optical power density threshold of the receiving end includes:
Adjusting the relative distance between the transmitting end and the receiving end to a critical position where the light receiving element of the receiving end senses and does not sense, and measuring the optical power at the critical position by using an optical power meter;
Acquiring the size of an optical power meter sensing light spot at a critical position, and if the actual light spot area is larger than or equal to the optical power meter sensing light spot area, the minimum sensing optical power density threshold value of a receiving end = the optical power/optical power meter sensing light spot area at the critical position;
If the actual light spot area is smaller than the sensing light spot area of the optical power meter, the minimum sensing optical power density threshold value of the receiving end=the optical power at the critical position/the actual light spot area.
As a further improvement of the application, the transmitting end lens is arranged so that the actual optical power density of the receiving end is greater than or equal to 1.5 times the minimum inductive optical power density threshold.
As a further improvement of the application, a control main board is arranged in the transmitting end, the control main board is erected in the transmitting end, and a limiting hole for the VCSEL light source to pass through is arranged on the control main board, so that the VCSEL light source is sunk back to be attached to the control main board through the limiting hole.
As a further improvement of the application, the light receiving element is a photodiode, a control main board is arranged in the receiving end, the control main board is erected in the receiving end, and a limiting hole for the photodiode to pass through is arranged on the control main board, so that the photodiode is sunk back to be attached to the control main board through the limiting hole.
As a further improvement of the present application, a receiving end lens is disposed at a position of the receiving end housing corresponding to the light receiving element, and the receiving end lens is used for focusing the light waves emitted by the VCSEL light source, and focusing the scattered light waves on the light receiving element.
As a further improvement of the application, the average value of the driving current of the photoelectric sensor is inversely proportional to the pulse period T of the driving current, is directly proportional to the processing frequency f of the photoelectric sensor, and is the average value of the driving currentThe method comprises the following steps:
Wherein T is the pulse period of the driving current, and i (T) is the variation function of the driving current along with time T.
As a further improvement of the application, the transmitting end lens is a plano-convex lens with an aspheric design, and the transmitting end shell and the receiving end shell are both opaque shells.
The application also provides a correlation type photoelectric sensor, which comprises a transmitting end and a receiving end which is arranged corresponding to the transmitting end;
a VCSEL light source is arranged in the transmitting end, a transmitting end lens is arranged at a position of the transmitting end shell corresponding to the VCSEL light source, the VCSEL light source is positioned in a position of one focal length of the transmitting end lens, and the transmitting end lens is used for enabling the actual optical power density of the receiving end to be larger than the minimum induction optical power density threshold value;
the receiving end is internally provided with a light receiving element for sensing the VCSEL light source.
As a further improvement of the application, the light receiving element is a photodiode, and a receiving end lens is arranged at a position of the receiving end shell corresponding to the light receiving element;
The transmitting end lens and the receiving end lens are plano-convex lenses with aspheric designs, and the transmitting end shell and the receiving end shell are opaque shells.
Compared with the prior art, the correlation photoelectric sensor and the assembly method thereof provided by the application have the following beneficial effects:
The application designs the transmitting end lens matched with the light spot of the VCSEL light source aiming at the characteristics that the light spot is circular and the middle energy is weaker, the actual optical power density of the receiving end is larger than the minimum induction optical power density threshold value of the transmitting end lens by arranging the transmitting end lens, and the internal structure of the transmitting end is optimized to enable the VCSEL light source to be imaged into solid light spots within one time of the focal length of the transmitting end lens, so that the internal space structures of the transmitting end and the receiving end are effectively utilized, the integral volume of the sensor is reduced, the characteristics of small divergence angle and concentrated energy of the VCSEL light source are exerted, the detection distance between the transmitting end and the receiving end is greatly improved, and the utilization rate of optical energy and the processing frequency of a photoelectric sensor are effectively improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions of the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is apparent that the drawings in the following description are only some embodiments of the present application, but not all embodiments, and other drawings obtained according to these drawings without inventive effort are all within the scope of the present application.
FIG. 1 is a flow chart of a method for fabricating an opposite-type photoelectric sensor according to an embodiment of the present application;
Fig. 2 is a schematic structural diagram of an emitting end in a method for fabricating an opposite-emission photoelectric sensor according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of a receiving end in a correlation photoelectric sensor assembly method according to an embodiment of the present application;
FIG. 4 is a schematic diagram of a structure for detecting whether a detection object exists in an opposite-type photoelectric sensor assembly method according to an embodiment of the present application;
FIG. 5 is a schematic view of a spot structure of a VCSEL light source imaging in an opposite type photoelectric sensor assembly method according to an embodiment of the present application;
Fig. 6 is a schematic view of a spot structure of a VCSEL light source imaged by a lens at an emission end in an exemplary method for fabricating an opposite-type photoelectric sensor according to the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
In order that the present disclosure may be more fully described and fully understood, the following description is provided by way of illustration of embodiments and specific examples of the present application; this is not the only form of practicing or implementing the application as embodied. The description covers the features of the embodiments and the method steps and sequences for constructing and operating the embodiments. However, other embodiments may be utilized to achieve the same or equivalent functions and sequences of steps. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the application described herein may be implemented in sequences other than those illustrated or otherwise described herein.
In the description of the embodiments of the present application, unless otherwise indicated, "/" means or, for example, a/B may represent a or B; the text "and/or" is merely an association relation describing the associated object, and indicates that three relations may exist, for example, a and/or B may indicate: in addition, in the description of the embodiments of the present application, "plural" means two or more, and other words and the like, it is to be understood that the preferred embodiments described herein are for illustration and explanation of the present application only, and are not intended to limit the present application, and embodiments of the present application and features in the embodiments may be combined with each other without conflict.
Referring to fig. 1-6, the present application provides a correlation type photoelectric sensor and an assembling method thereof, which are used for solving the problem of how to realize a longer detection distance while reducing the volume of the sensor. As shown in fig. 1, a flowchart of a method for fabricating a correlation photoelectric sensor according to an embodiment of the present application includes the following steps:
Step S1: arranging a transmitting end and a receiving end correspondingly, arranging a VCSEL light source in the transmitting end, and arranging a light receiving element used for sensing the VCSEL light source in the receiving end;
The Vertical Cavity Surface Emitting Laser (VCSEL) light source is selected, and because the internal space of the correlation type photoelectric sensor provided by the present application is millimeter level, the VCSEL light source has the characteristics of extremely small active layer volume, similar Cavity length level and wavelength, simple encapsulation, etc., a larger space can be obtained for the internal structural space of the photoelectric sensor, and the VCSEL light source has the characteristics of small divergence angle, concentrated energy and visibility, and compared with other light sources, the VCSEL light source can realize the advantages of high speed, low power consumption, wide working temperature range, energy saving, long service life, etc., the present application preferably uses the VCSEL light source as the light source of the correlation type photoelectric sensor.
As an optional implementation manner, a control main board is arranged in the transmitting end, the control main board is erected in the transmitting end, and a through hole for the VCSEL light source to pass through is formed in the control main board, so that the VCSEL light source is sunk back to be attached to the control main board through the through hole.
In a specific embodiment provided by the application, please refer to fig. 2, for a schematic structural diagram of a transmitting end in an opposite-type photoelectric sensor assembly method provided by the embodiment of the application, a control main board is preferably set to be in a form of a PCB (printed circuitboard ) board, the PCB board plays a role of a supporting body and a connecting carrier of electronic components, the shape of the PCB board is approximately matched with the internal space structure of the transmitting end, the PCB board can be erected in the transmitting end in a mode of a supporting piece or a connecting piece (not shown in the figure), a limiting hole matched with a VCSEL light source is formed in the PCB board, so that the VCSEL light source is sunk back-attached to the PCB board through the limiting hole, namely, the top of the VCSEL light source is slightly sunk compared with the top of the PCB board in the figure, the bottom of the VCSEL light source is correspondingly attached to the back of the PCB board, and the VCSEL light source is sunk back-attached to the PCB board in the manner, so that the VCSEL light source is further fixed, and the internal space structure of the transmitting end is effectively utilized.
It should be noted that, the position of the limiting hole should not affect the circuit connection structure on the original PCB board in principle, the PCB board may also play a role in supplying power to the VCSEL light source or controlling the light emitting time and light emitting power of the VCSEL light source, so how to realize power supply control to the VCSEL light source through the PCB board and the connection relationship between the electronic components on the PCB board are widely applied in the prior art, which is not repeated herein.
As an optional implementation manner, the light receiving element is a photodiode, a control main board is arranged in the receiving end, the control main board is erected in the receiving end, and a limiting hole for the photodiode to pass through is formed in the control main board, so that the photodiode is sunk back to be attached to the control main board through the limiting hole.
In the embodiment of the present application, referring to fig. 3, a schematic structural diagram of a receiving end in a correlation type photoelectric sensor assembly method provided by the embodiment of the present application may be observed that a light receiving element selected by the present application is a PD (Photo-Diode), a control main board is disposed in the same manner as an internal structure of a transmitting end in the receiving end, the control main board is disposed as a PCB board, the PCB board functions as a supporting body and a connection carrier of an electronic component, a shape of the PCB board is approximately adapted to an internal space structure of the receiving end, and may be erected in a manner of a supporting member or a connecting member (not shown in the figure) in the receiving end, and a limiting hole adapted to the light receiving element is formed on the PCB board, so that the light receiving element is attached to the PCB board through the limiting hole in a sinking manner.
It should be noted that, the structure and the function of the control main board and the limiting hole disposed on the control main board disposed inside the transmitting end, and the control main board and the limiting hole disposed on the control main board disposed inside the receiving end are substantially the same, so that the embodiment of the present application does not make a naming distinction in the explanation, and does not affect the understanding of the technical solution of the present application, and those skilled in the art should know.
Step S2: adjusting the relative distance between the transmitting end and the receiving end, obtaining the minimum inductive optical power density threshold of the receiving end, and setting a transmitting end lens at the position of the transmitting end shell corresponding to the VCSEL light source so that the actual optical power density of the receiving end is larger than the minimum inductive optical power density threshold;
As an optional implementation manner, the adjusting the relative distance between the transmitting end and the receiving end to obtain the minimum inductive optical power density threshold of the receiving end includes:
Adjusting the relative distance between the transmitting end and the receiving end to a critical position where the light receiving element of the receiving end senses and does not sense, and measuring the optical power at the critical position by using an optical power meter;
Acquiring the size of an optical power meter sensing light spot at a critical position, and if the actual light spot area is larger than or equal to the optical power meter sensing light spot area, the minimum sensing optical power density threshold value of a receiving end = the optical power/optical power meter sensing light spot area at the critical position;
If the actual light spot area is smaller than the sensing light spot area of the optical power meter, the minimum sensing optical power density threshold value of the receiving end=the optical power at the critical position/the actual light spot area.
In the embodiment of the application, the minimum inductive optical power density threshold of the receiving end is required to be obtained, firstly, the transmitting end provided with the VCSEL light source and the receiving end provided with the light receiving element are utilized for testing, the relative distance between the transmitting end and the receiving end is adjusted to the critical position of the induction and non-induction of the light receiving element of the receiving end, and the optical power at the critical position is measured by using an optical power meter commonly used in the field.
Further, the size of the sensing light spot of the optical power meter at the critical position is obtained, a sensing area is arranged on the optical power meter, if the actual light spot area at the critical position is larger than or equal to the sensing light spot area of the optical power meter, the minimum sensing light power density threshold value of the receiving end is calculated by taking the sensing light spot area of the optical power meter as a standard, and at the moment, the minimum sensing light power density threshold value of the receiving end = the sensing light spot area of the optical power/optical power meter at the critical position.
If the actual light spot area at the critical position is smaller than the sensing light spot area of the optical power meter, calculating the minimum sensing light power density threshold of the receiving end based on the actual light spot area, wherein the minimum sensing light power density threshold of the receiving end=the light power/the actual light spot area at the critical position.
With continued reference to fig. 5, a schematic diagram of a spot structure of a VCSEL light source in a method for fabricating an opposite-emission photoelectric sensor according to an embodiment of the present application is shown, where a spot of the VCSEL light source is a ring structure, the energy in the middle of the spot is small, after long-distance transmission, the situation that the energy density of the spot is insufficient to reach the minimum inductive optical power density threshold of the receiving end may occur, and the working principle of the opposite-emission photoelectric sensor is that the inductive detection is achieved only by reaching the minimum inductive optical power density threshold of the receiving end, and no spot is needed to be clearly imaged, so that in the embodiment of the present application, after the relative distance between the transmitting end and the receiving end is adjusted, an adapted transmitting end lens is disposed at a position corresponding to the transmitting end housing and the VCSEL light source, so that the actual optical power density of the receiving end is greater than the minimum inductive optical power density threshold.
As an optional implementation manner, the transmitting end lens is preferably a circular plane convex mirror, the convex surface of the transmitting end lens adopts an aspheric surface design, the lens can be made of common gum materials, after the transmitting end lens is arranged, light waves emitted by the VCSEL light source are focused by the aspheric lens and then transmitted in a small angle divergence angle, and the energy of the light is concentrated when reaching the receiving end light receiving element, so that the optical power density of the actually reaching the receiving end is larger than the minimum induction optical power density threshold value of the receiving end.
It should be noted that, in principle, when the optical power density of the receiving end is actually reached to be equal to the minimum inductive optical power density threshold of the receiving end, the receiving end can realize detection, however, considering the error existing between the actual operation and the theoretical calculation, the application sets the lens of the receiving end to make the actual optical power density of the receiving end be greater than the minimum inductive optical power density threshold thereof, preferably greater than or equal to 1.5 times of the minimum inductive optical power density threshold thereof, so that the photoelectric sensor can realize higher inductive accuracy and longer detection distance.
Further, referring to fig. 3, in the present application, a receiving end lens is disposed at a position corresponding to the light receiving element on the receiving end housing, and in consideration of manufacturing cost and design time of the photoelectric sensor, the same type and parameter lens as the transmitting end lens is preferably used for manufacturing.
Step S3: and adjusting the VCSEL light source to enable the VCSEL light source to be within one focal length of the transmitting end lens.
With continued reference to fig. 6, in the method for fabricating an opposite-emission photoelectric sensor according to the embodiment of the present application, a VCSEL light source is imaged by a lens at an emission end, and because the VCSEL light spot is in a shape of a "ring", its middle energy distribution is extremely low, if the VCSEL light spot is imaged by the lens, the size of a portion with low energy in the center of the light spot increases with increasing distance, which results in shortening the detection distance of the photoelectric sensor and wasting energy, the lens has a condensing effect on light, and when the VCSEL light source is set within one focal length of the lens at the emission end, the generated light spot is not imaged, and the "ring" light spot is changed into a solid light spot corresponding to the light spot in fig. 6, so that the detection distance of the photoelectric sensor is further.
In the embodiment of the application, the design of the parameters of the lens of the transmitting end can be realized through Zemax software, in the actual design, the thickness of the transmitting end is firstly shaped, the size of the applicable residual space in the transmitting end is obtained after the shell of the transmitting end is removed under the shaping, each initial parameter of the lens of the transmitting end can be preliminarily determined according to the size of the residual space and geometric optics knowledge, and the initial parameters are input by combining with the Zemax software, so that the initial parameters can be optimized to obtain the required parameters of the lens of the transmitting end, such as parameters of object distance, image distance, curvature radius, lens diameter, lens thickness and the like, and the adaptive lens of the transmitting end is selected according to the parameters.
Further, after selecting a proper transmitting end lens, performing scene theory simulation through tracePro software, moving the position of the VCSEL light source and the position of the transmitting end lens through tracePro software to enable the VCSEL light source to be within one time of the focal length of the transmitting end lens, performing drawing board sample according to the simulated transmitting end at the optimal position, and assembling the VCSEL light source and the transmitting end lens according to the simulated optimal position, wherein the actual optical power density of the receiving end is larger than the minimum inductive optical power density threshold value of the VCSEL light source, and the spatial position relation of the VCSEL light source within one time of the focal length of the transmitting end lens can be realized.
As an alternative implementation manner, the receiving end shell is also provided with an indicator lamp and a buzzer;
When the light receiving element senses the light waves emitted by the VCSEL light source, no detection object exists between the emitting end and the receiving end;
When the light receiving element does not sense the light waves emitted by the VCSEL light source, a detection object exists between the emitting end and the receiving end, and the receiving end converts the change of the light intensity of the VCSEL light source into an electric signal so that the indicator lamp carries out lamplight prompt and/or the buzzer carries out sound prompt.
Referring to fig. 4, a schematic structural diagram of detecting whether a detected object exists in the method for detecting an opposite-emission type photoelectric sensor according to an embodiment of the present application is shown, in order to more intuitively know whether a detected object exists between a transmitting end and a receiving end, an indicator lamp and a buzzer (not shown) are further disposed on a housing of the receiving end, and when a light wave emitted by the VCSEL light source is sensed by a light receiving element, it is determined that no detected object exists between the transmitting end and the receiving end at this time, and because the VCSEL light source continuously outputs, the light intensity of the VCSEL light source sensed by the receiving end does not change, and the indicator lamp and the buzzer do not prompt.
When the light receiving element does not sense the light waves emitted by the VCSEL light source, judging that a detection object exists between the emitting end and the receiving end, and continuously outputting the VCSEL light source, wherein the presence of the detection object can block the VCSEL light source to a certain extent, and the receiving end senses the change of the light intensity of the VCSEL light source, and then converts the change of the light intensity of the VCSEL light source into an electric signal so that the indication lamp carries out light prompt and/or the buzzer carries out sound prompt; as to whether the light prompt is needed, the sound prompt is needed or the light and the sound are needed to be simultaneously prompted, the adjustment can be performed by the person skilled in the art according to the practical application environment of the photoelectric sensor, and the application is not limited in any way.
It should be noted that, in order not to affect the emission and the reception of the VCSEL light source, the emission end housing and the receiving end housing provided in the present application are preferably made of black opaque plastic materials, and the emission and the reception of the VCSEL light source are realized through the emission end lens and the receiving end lens.
Further, the application provides an average value of the driving current of the photoelectric sensorInversely proportional to the pulse period T of the drive current, and directly proportional to the processing frequency f of the photosensor, wherein the average value of the drive currentThe method comprises the following steps:
The processing frequency f of the photoelectric sensor is as follows:
Wherein T is the pulse period of the driving current, and i (T) is the variation function of the driving current along with time T. The photoelectric sensor provided by the application uses the VCSEL light source, and compared with the traditional LED light source, the VCSEL light source has lower driving current, so that a smaller pulse period is realized, the processing frequency of the photoelectric sensor is improved, and the power consumption is further reduced. In practical application, it can be found that under the same driving current, the VCSEL light source can achieve a longer detection distance than the LED light source; the VCSEL light source requires lower drive current than the LED light source within the equivalent target detection distance.
According to the correlation type photoelectric sensor assembly method, the application provides a correlation type photoelectric sensor assembled by the assembly method, and the photoelectric sensor comprises a transmitting end and a receiving end which is arranged corresponding to the transmitting end;
a VCSEL light source is arranged in the transmitting end, a transmitting end lens is arranged at a position of the transmitting end shell corresponding to the VCSEL light source, the VCSEL light source is positioned in a position of one focal length of the transmitting end lens, and the transmitting end lens is used for enabling the actual optical power density of the receiving end to be larger than the minimum induction optical power density threshold value;
the receiving end is internally provided with a light receiving element for sensing the VCSEL light source.
The above-mentioned corresponding arrangement of the transmitting end and the receiving end may be understood as a positional relationship of the corresponding arrangement of the transmitting end lens and the receiving end lens.
As a further improvement of the application, the light receiving element is a photodiode, and a receiving end lens is arranged at a position of the receiving end shell corresponding to the light receiving element;
The transmitting end lens and the receiving end lens are plano-convex lenses with aspheric designs, and the transmitting end shell and the receiving end shell are opaque shells.
As an optional implementation mode, in order to more intuitively know whether a detected object exists between the transmitting end and the receiving end, the application also provides an indicator lamp and a buzzer on the shell of the receiving end, when the light receiving element senses the light wave emitted by the VCSEL light source, the condition that the detected object exists between the transmitting end and the receiving end at the moment is judged, the VCSEL light source continuously outputs, the light intensity of the VCSEL light source sensed by the receiving end does not change, and the indicator lamp and the buzzer do not prompt.
When the light receiving element does not sense the light waves emitted by the VCSEL light source, judging that a detection object exists between the emitting end and the receiving end, and continuously outputting the VCSEL light source, wherein the presence of the detection object can block the VCSEL light source to a certain extent, and the receiving end senses the change of the light intensity of the VCSEL light source and converts the change of the light intensity of the VCSEL light source into an electric signal so that the indication lamp carries out light prompt and/or the buzzer carries out sound prompt; as to whether the light prompt is needed, the sound prompt is needed or the light and the sound are needed to be simultaneously prompted, the adjustment can be performed by the person skilled in the art according to the practical application environment of the photoelectric sensor, and the application is not limited in any way.
The opposite-type photoelectric sensor provided by the application designs the matched transmitting end lens aiming at the characteristics that the light spot of the VCSEL light source is in a circular ring shape and the middle energy is weaker, optimizes the internal structure of the transmitting end to enable the light spot of the VCSEL light source to be a solid light spot within one time of the focal length of the transmitting end lens, avoids the inferior part of the VCSEL light source, exerts the characteristics of small divergence angle and concentrated energy of the VCSEL light source, greatly improves the detection distance between the transmitting end and the receiving end, and can realize longer detection distance compared with the same type of products with the same compactness degree, and compared with the traditional LED light source, improves the utilization rate of light energy from 1.1% to 36%.
Meanwhile, in the same target detection distance, compared with the traditional LED light source, the VCSEL light source has lower driving current, smaller pulse period is realized, the processing frequency of the photoelectric sensor is improved, and the power consumption is further reduced; the method can be widely applied to detecting the existence of thin flat parts such as thin rings, PCB frames, IC discs and the like, or to detecting the existence of zero workpieces by installing sensors in compact and narrow spaces.
For further details of implementation of the above technical solutions by the transmitting end and the receiving end in the correlation photoelectric sensor, reference may be made to the specific description in the correlation photoelectric sensor sensing method provided in the embodiment of the application, which is not repeated herein.
In the several embodiments provided in the present application, it should be understood that the disclosed apparatus, device and method may be implemented in other manners. For example, the apparatus embodiments described above are merely illustrative, e.g., the division of elements is merely a logical functional division, and there may be additional divisions of actual implementation, e.g., multiple elements or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or units, which may be in electrical, mechanical or other form.
In addition, each functional unit in the embodiments of the present application may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in software functional units.
According to the correlation photoelectric sensor and the assembly method thereof provided by the application, the transmitting end lens matched with the VCSEL light source is designed according to the characteristics that the light spot of the VCSEL light source is circular and the middle energy is weak, the actual optical power density of the receiving end is larger than the minimum induction optical power density threshold value of the transmitting end lens through arranging the transmitting end lens, and the internal structure of the transmitting end is optimized to enable the VCSEL light source to be imaged into a solid light spot within one time of the focal length of the transmitting end lens, so that the internal space structures of the transmitting end and the receiving end are effectively utilized, the integral volume of the sensor is reduced, the characteristics of small divergence angle and concentrated energy of the VCSEL light source are simultaneously exerted, the detection distance between the transmitting end and the receiving end is greatly improved, and the utilization rate of optical energy and the processing frequency of the photoelectric sensor are effectively improved.
The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the application.
Claims (9)
1. A method of fabricating a correlation photoelectric sensor, comprising the steps of:
Arranging a transmitting end and a receiving end correspondingly, arranging a VCSEL light source in the transmitting end, and arranging a light receiving element used for sensing the VCSEL light source in the receiving end;
Adjusting the relative distance between the transmitting end and the receiving end, obtaining the minimum inductive optical power density threshold of the receiving end, and setting a transmitting end lens at the position of the transmitting end shell corresponding to the VCSEL light source so that the actual optical power density of the receiving end is larger than the minimum inductive optical power density threshold; the relative distance between the transmitting end and the receiving end is adjusted to a critical position where the light receiving element of the receiving end senses and does not sense, and an optical power meter is used for measuring the optical power at the critical position;
acquiring the size of an optical power meter sensing light spot at a critical position, and if the actual light spot area is larger than or equal to the optical power meter sensing light spot area, the minimum sensing optical power density threshold value of a receiving end = the optical power/optical power meter sensing light spot area at the critical position; if the actual light spot area is smaller than the sensing light spot area of the optical power meter, the minimum sensing optical power density threshold value of the receiving end=the optical power at the critical position/the actual light spot area;
And adjusting the VCSEL light source to enable the VCSEL light source to be within one focal length of the transmitting end lens.
2. A method of fabricating a correlation photoelectric sensor according to claim 1, wherein the transmitting lens is arranged such that the actual optical power density of the receiving lens is greater than or equal to 1.5 times its minimum induced optical power density threshold.
3. The method of claim 1, wherein a control main board is disposed inside the emitting end, the control main board is erected inside the emitting end, and a limiting hole through which the VCSEL light source passes is disposed on the control main board, so that the VCSEL light source is sunk back to the control main board through the limiting hole.
4. The method of claim 1, wherein the light receiving element is a photodiode, a control main board is disposed inside the receiving end, the control main board is erected inside the receiving end, and a limiting hole through which the photodiode passes is disposed on the control main board, so that the photodiode is sunk back to be attached to the control main board through the limiting hole.
5. The method of claim 4, wherein a receiving lens is disposed at a position of the receiving housing corresponding to the light receiving element, and the receiving lens is configured to focus the light waves emitted from the VCSEL light source and focus the scattered light waves on the light receiving element.
6. A method of fabricating a correlation-type photoelectric sensor according to claim 1, wherein an average value of the driving current of the photoelectric sensor is inversely proportional to a pulse period T of the driving current, is proportional to a processing frequency f of the photoelectric sensor, and is an average value of the driving currentThe method comprises the following steps:
Wherein T is the pulse period of the driving current, and i (T) is the variation function of the driving current along with time T.
7. A method of fabricating a correlation photoelectric sensor according to claim 1, wherein the transmitting end lens is a plano-convex lens of aspherical design, and the transmitting end housing and the receiving end housing are both opaque housings.
8. The correlation type photoelectric sensor is characterized by comprising a transmitting end and a receiving end which is arranged corresponding to the transmitting end;
a VCSEL light source is arranged in the transmitting end, a transmitting end lens is arranged at a position of the transmitting end shell corresponding to the VCSEL light source, the VCSEL light source is positioned in a position of one focal length of the transmitting end lens, and the transmitting end lens is used for enabling the actual optical power density of the receiving end to be larger than the minimum induction optical power density threshold value;
the receiving end is internally provided with a light receiving element for sensing the VCSEL light source.
9. The correlation photoelectric sensor according to claim 8, wherein the light receiving element is a photodiode, and a receiving end lens is provided at a position of the receiving end housing corresponding to the light receiving element;
The transmitting end lens and the receiving end lens are plano-convex lenses with aspheric designs, and the transmitting end shell and the receiving end shell are opaque shells.
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| CN218524895U (en) * | 2022-08-12 | 2023-02-24 | 沈阳中光电子有限公司 | Photoelectric sensor |
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| JP4081973B2 (en) * | 2000-10-19 | 2008-04-30 | 富士ゼロックス株式会社 | Optical scanning device |
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| CN107966741A (en) * | 2016-10-19 | 2018-04-27 | 欧姆龙株式会社 | Correlation type photoelectric sensor and object detection system |
| DE102017117694A1 (en) * | 2017-08-04 | 2019-02-07 | Sick Ag | Opto-electronic sensor and method for detecting objects in a surveillance area |
| CN112379528A (en) * | 2020-11-25 | 2021-02-19 | 江西欧迈斯微电子有限公司 | Transmission module, image capturing module and electronic equipment |
| CN115903069A (en) * | 2021-08-03 | 2023-04-04 | 科瑞工业自动化系统（苏州）有限公司 | Correlation sensor for sensitivity adjustment based on polaroid and operation method thereof |
| CN218652752U (en) * | 2022-08-24 | 2023-03-21 | 陕西精微医疗科技有限公司 | Light feeding instrument light source beneficial to accurately calculating red light eye-entering power and light feeding instrument |
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| CN208444026U (en) * | 2018-05-28 | 2019-01-29 | 深圳深浦电气有限公司 | A kind of line is to penetrating laser sensor |
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