CN117192266A - Junction temperature online monitoring method for power device in new energy automobile inverter - Google Patents
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Abstract
The invention discloses a junction temperature on-line monitoring method of a power device in a new energy automobile inverter, which comprises the steps of determining the attribute of each layer of a power module and establishing a three-dimensional model in simulation software; carrying out transient thermal impedance test analysis under different conditions on the power module and the whole rack to obtain transient thermal impedance curves of different conditions and reference points, especially data under different coupling states; according to the measured transient thermal impedance curves of different groups of data, adjusting parameters of the established model in simulation software; constructing a two-dimensional thermal network model under different coupling conditions by using the calibrated three-dimensional simulation analysis model; and monitoring the junction temperature on line according to the established two-dimensional thermal network model and comparing with experimental and simulation results. The invention also establishes an aging compensation device, and even if the thermal network model is modified aiming at the aging problem, the invention has low requirement on calculating junction temperature hardware according to the established thermal network model and quick response.
Description
Technical Field
The invention belongs to the technical field of power electronics, and particularly relates to a junction temperature on-line monitoring method of a power device in a new energy automobile inverter.
Background
The main drive inverter is a key part of the electric power assembly and is responsible for converting the direct-current voltage of a high-voltage battery (350-800 VDC) into alternating-current voltage of three-phase alternating-current sinusoidal current so as to rotate the electric induction motor and drive the vehicle to advance. Common power levels are 40kW to 250+ kW. When 400V-800V batteries are used to power the main drive inverter, the rated voltage of the inverter components needs to reach 600V-1200V, and the operating current level of each phase is as high as 1000A. The performance of the module influences the overall energy efficiency of the vehicle, the junction temperature is always the most important parameter and index of the power device, and the junction temperature is also the key for influencing the reliable operation of the whole inverter, and is an industry difficult problem. Therefore, the accurate junction temperature online evaluation method not only can lay a foundation for the long-term reliability of the device, but also can provide a method foundation for the residual life evaluation.
The IGBT module is an important component part in the inverter of the new energy automobile, the biggest factor influencing the service life of the IGBT is junction temperature, and when the junction temperature fluctuation of the IGBT in the working state is large, the failure rate of the IGBT is rapidly increased, and the service life of the IGBT is also reduced. And the change of junction temperature can lead to the change of thermophysical parameters of the IGBT module, so that the modeling of the IGBT becomes complex. Therefore, monitoring the operating junction temperature of an IGBT is of great importance for life prediction and failure mechanism analysis thereof.
The junction temperature on-line monitoring method mainly comprises an optical measurement method, a physical contact method, a temperature-sensitive electrical parameter method and a thermal network model method. Although the optical measurement method has high precision, the temperature distribution of the whole chip surface can be obtained, in particular, the dynamic change process of the bonding wire temperature can be obtained, but the encapsulation of the whole module is required to be destroyed during measurement, and the method is not applied in practice. The physical contact method is mainly a thermocouple and a thermistor, and has the defects of low response speed, large error and the like in the practical application process although the measurement method is simple. The temperature-sensitive electrical parameter method takes a chip or a module as a temperature sensor, selects a device parameter influenced by temperature as a characterization quantity, establishes a corresponding relation between the characterization quantity and junction temperature in a passive heating mode, is called temperature coefficient calibration, is called calibration for short, and when the device works, the power loss of the chip generates heat to actively heat the module, and the working junction temperature can be deduced by measuring the characterization quantity and comparing the characterization quantity with the calibration relation. However, the thermosensitive electrical parameter method at the present stage also has corresponding defects, such as influence on normal operation of devices, low sensitivity of measured parameters, easy interference and the like, and is greatly limited when being applied to complex working conditions.
The basic principle of the thermal network model method is to construct a thermal path network from junction temperature to known temperature nodes according to a thermoelectric comparison theory, so that the effects of on-line monitoring and predicting junction temperature are realized. The method is used as a junction temperature monitoring method recommended by a device manufacturer, has low requirements on hardware conditions, is simple and easy to operate, has the characteristics of low implementation cost and quick response, and is therefore the junction temperature extraction method with the most potential. The thermal network and the model method can be divided into one-dimensional, two-dimensional and three-dimensional thermal network models. The one-dimensional thermal network model ignores the cross thermal coupling phenomenon, has a large error with the actual junction temperature test, and is highly dependent on a finite element method, so that the three-dimensional thermal network model is not good for practical application.
Although the conventional two-dimensional thermal network model method considers the coupling between chips, the data fitted by the two-dimensional thermal network model established by the conventional method are obtained through a simulation method, and experimental calibration is not performed, so that the estimated junction temperature of the established thermal network model has a certain error with the actual situation.
The main drive inverter is a key part of the electric power assembly, the power device is a main component of the main drive inverter, and the junction temperature is the most important factor influencing the reliability of the power device, so that a good junction temperature monitoring method can lay a foundation for the long-term reliability of the device.
Disclosure of Invention
In order to solve the technical problems, the invention provides an online junction temperature monitoring method for a power device in a new energy automobile inverter, which is used for measuring transient thermal impedance curves under different conditions through experiments and establishing a thermal network model to monitor the junction temperature online. The method has low hardware requirement and quick response. The junction temperature can be calculated according to a model established in advance by only measuring the ambient temperature.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a junction temperature on-line monitoring method of a power device in a new energy automobile inverter comprises the following steps:
step 1: establishing a three-dimensional simulation analysis model of the power module according to the measured sample;
step 2: carrying out transient thermal impedance test analysis under different conditions aiming at the power module and the whole power device test bench;
step 3: calibrating a three-dimensional simulation analysis model;
step 4: constructing a two-dimensional thermal network model under different coupling conditions according to the calibrated three-dimensional simulation analysis model;
step 5: and (5) performing two-dimensional thermal network model verification.
The beneficial effects are that:
compared with the conventional method, the method adopts a two-dimensional thermal network model, and has higher precision by considering the condition of mutual coupling between chips. In addition, the extraction of the transient thermal impedance by the conventional method is usually extracted from a data table provided by a provider or is mentioned by utilizing finite element simulation, and compared with the transient thermal impedance extracted by experiments, the method is not close to reality, has a certain error, and cannot accurately estimate the junction temperature.
Drawings
FIG. 1 is a schematic diagram of a temperature calibration;
FIG. 2 is a schematic diagram of saturation voltage drop at low current;
FIG. 3 is a diagram of a thermal network model taking thermal coupling into account;
fig. 4 is a flowchart of a junction temperature on-line monitoring method of a power device in a new energy automobile inverter.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
As shown in fig. 4, the method for on-line monitoring the junction temperature of the power device in the inverter of the new energy automobile comprises the following steps:
step 1: establishing a three-dimensional simulation analysis model of the power module according to the measured sample, wherein the three-dimensional simulation analysis model comprises the following steps:
step 1.1: according to the IGBT module structure, a three-dimensional simulation analysis model established in simulation software can be divided into a chip layer, an upper copper layer, a solder layer, a ceramic layer, a lower copper layer, a substrate layer, a TIM layer and a radiator.
Step 1.2: and measuring the specific dimensions of the chip layer, the upper copper layer, the solder layer, the ceramic layer, the lower copper layer, the substrate layer, the TIM layer and the radiator according to the real object, and establishing a complete three-dimensional simulation analysis model according to the measured data.
Step 1.3: the material of the chip is selected to be Si in the simulation software, the material of the solder layer is Sn-Ag-Cu, and the material of the ceramic layer is Al 2 O 3 The upper copper layer and the lower copper layer are made of Cu, and the TIM layer is made of heat-conducting silicone grease.
Step 1.4: inputting Si, sn-Ag-Cu and Al into simulation software 2 O 3 The data of density, heat conductivity coefficient and constant pressure heat capacity of the heat conducting silicone grease material are shown in table 1.
TABLE 1
Step 2: transient thermal impedance test analysis under different conditions is carried out on the power module and the whole power device test bench, and the method comprises the following steps:
step 2.1: and measuring the junction temperature of the device by adopting a small current saturation voltage drop method.
The test principle of the saturation voltage drop method under small current is as follows: because of the voltage Vce and the junction temperature T j The linear relation is presented, the saturation voltage drop at two ends of the tested device under the small current can be measured by passing the small current after the load current of the tested device is cut off, and the calibrated voltage Vce and the junction temperature T are compared j The junction temperature can be obtained from the relationship of (a).
With small sizeThe saturation voltage drop under current measures junction temperature and needs to be calibrated in advance, and a calibrated schematic diagram is shown in fig. 1, wherein G is a grid electrode, C is a collector electrode, E is an emitter electrode, and Isense is the measured current. The principle is that the device is turned on by applying a turn-on voltage to the gate 15v, and the voltage Vce and junction temperature T are applied during the turn-on of the device j Exhibits a linear relationship, the device is passively heated by an induction cooker, and the voltage Vce and the junction temperature T are recorded j Data, vce and T are obtained by linear fitting j The coefficient k between the two is expressed as follows:
T j ＝kVce+b
wherein b is a constant.
Obtaining the voltage Vce and the junction temperature T j After the relation, junction temperature data under the condition of device cooling is measured through a circuit diagram shown in fig. 2. Wherein K is a switch, I load Is the load current.
Step 2.2: calculating a transient thermal impedance curve under the condition of temperature reduction:
calculating the transient thermal impedance curve may be calculated according to the following formula:
wherein Z is th T is transient thermal impedance a The temperature of the water cooling plate can be adjusted to change the ambient temperature, and P is the power loss;
step 2.3: calculating data under different coupling states, firstly measuring the junction temperature of each IGBT in the power module when the single IGBT works, calculating to obtain respective transient thermal impedance curves, and then measuring the junction temperature of the chip and new transient thermal impedance curves when the two IGBTs work until the junction temperature of the chip and the respective transient thermal impedance curves under the condition that the 6 IGBTs work and are coupled simultaneously.
Step 2.4: transient thermal impedance curves for different conditions and reference points are obtained.
And (3) changing the ambient temperature, namely adjusting the temperature of the water cooling plate and the heat dissipation condition, and repeating the step (2.3) to obtain new transient thermal impedance data.
Step 3: calibrating a three-dimensional simulation analytical model, comprising:
step 3.1: and setting a current input/output end, a current flow path and an initial value of the current of the three-dimensional simulation analysis model. The bottom of the heat sink is set as a boundary condition and given a heat transfer coefficient, the thermal expansion and electromagnetic heat in the multiple physical fields are set as coupling and a boundary probe is added at the chip.
Step 3.2: the transient simulation is used for research, data of a three-dimensional simulation analysis model during chip cooling is read, and a simulated transient thermal impedance curve Z is obtained according to formula calculation th_t Comparing and analyzing two groups of transient thermal impedance curves obtained by experiments and simulation, if the transient thermal impedance curve data are different before 0.01s, adjusting the area and the thickness of a chip layer of a three-dimensional simulation analysis model, and adjusting Si, cu and Al according to the transient thermal impedance after 0.01s 2 O 3 Is modified by the thermal conductivity and heat capacity of the material.
Step 4: constructing a two-dimensional thermal network model under different coupling conditions according to the calibrated three-dimensional simulation analysis model, wherein the method comprises the following steps:
step 4.1: obtaining a calibrated transient thermal impedance curve Z th_1 、Z th_2 、Z th_3 、Z th_4 、Z th_5 、Z th_6 Establishing a self-impedance matrix Z self The expression is as follows;
since the two-dimensional thermal network model takes thermal coupling into account, thermal impedance of mutual coupling between chips is also required, and when loss is applied to chip n, the thermal impedance of coupling between the temperature reference point and chip m is defined as follows
Wherein T is m For junction temperature of chip m, P n Work for chip nRate loss.
Based on the calculated coupling thermal impedance of each chip, a coupling thermal impedance matrix Z can be established couple ，Z couple The expression of (2) is as follows
The chip junction temperature calculation expression when the influence of thermal coupling is considered according to the superposition principle is as follows:
T j ＝(Z couple +Z self )P+T a
z in the thermal resistance matrix th After discretizing according to the actual sampling time, a discretized thermal network for online junction temperature extraction can be obtained. Based on this, a coupled thermal impedance network model structure is shown in fig. 3.
In FIG. 3, taking the first branch as an example, a power loss P is applied to the device loss_1 Obtaining junction temperature T of the device j1 Heat is transferred downwards along with the branch and passes through Z th_ch1 The zth_ha energy loss yields the ambient temperature ta.zth_ha as the thermal impedance of the heat sink. T (T) j1 -T jn P for junction temperature of each chip loss1 -P lossn-1 Z is the power loss of each chip th_ch1 -Z th_chn Is the transient thermal impedance between the shell of each chip to the heat sink.
Step 4.2 in the Foster thermal network model, the thermal resistance and thermal capacitance parameter values are all fitted by thermal impedance curves, and the thermal impedance parameter Z between the two values can be obtained by adopting multi-order exponential curve fitting th_m (t), namely:
wherein t is time, R i Is thermal resistance, n is fitting order, i is natural number;
the time constant τ is determined by the thermal resistance and heat capacity of each stage, and the expression is:
τ i ＝R i C i
wherein C is i Is a thermal resistance.
The self-heating impedance and the coupling thermal impedance are usually fitted by using a nonlinear fitting function lsqcurvefit, and the higher the fitting order is, the more accurate the junction temperature calculation is, but too high the fitting order also causes the problem of too long calculation time. The self-heating impedance of the invention adopts four-order RC to carry out fitting to obtain R i 、C i The coupling thermal impedance is fitted by adopting a first-order RC to obtain respective coupling thermal resistance R (m，n) And coupled heat capacity C (m，n) 。
And 5, performing two-dimensional thermal network model verification, including:
step 5.1: experimentally verified, the device is placed in the circuit diagram shown in fig. 2, and the current I is turned on intermittently load Cycling the device to heat, turning off current I load To cool down the device. The on and off times are t respectively on And t off ，t on And t off The ratio of (2) is 1:2. At I load Measuring applied current I when turned off sense The voltage Vce across the lower device, according to Vce and T j Obtained and recorded the experimentally measured junction temperature T j_e 。
Measuring and obtaining the ambient temperature T a Will T a And (3) carrying the values into the established thermal network model, and verifying whether the values accord with the junction temperature fluctuation measured by experiments.
Step 5.2: verification by simulation method, setting current value I applied to device in simulation software load Determining t on 、t off At t on Time, heat the device under test, t off Temperature T of chip during temperature reduction j_t To be measured T j_t Comparing the calculated values with the two-dimensional thermal network model, and verifying whether the junction temperature fluctuation trend is similar or not and whether the error is smaller or not.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (6)
1. The on-line junction temperature monitoring method for the power devices in the new energy automobile inverter is characterized by comprising the following steps of:
step 1: establishing a three-dimensional simulation analysis model of the power module according to the measured sample;
step 2: carrying out transient thermal impedance test analysis under different conditions aiming at the power module and the whole power device test bench;
step 3: calibrating a three-dimensional simulation analysis model;
step 4: constructing a two-dimensional thermal network model under different coupling conditions according to the calibrated three-dimensional simulation analysis model;
step 5: and (5) performing two-dimensional thermal network model verification.
2. The method for on-line monitoring the junction temperature of a power device in an inverter of a new energy automobile according to claim 1, wherein the step 1 comprises:
step 1.1: according to the IGBT module structure, the established three-dimensional simulation analysis is divided into a chip layer, an upper copper layer, a solder layer, a ceramic layer, a lower copper layer, a substrate layer, a TIM layer and a radiator;
step 1.2: according to the physical object, measuring the specific dimensions of the chip layer, the upper copper layer, the solder layer, the ceramic layer, the lower copper layer, the substrate layer, the TIM layer and the radiator, and establishing a complete three-dimensional simulation analysis model according to the measured data;
step 1.3: the material of the selected chip is Si, the material of the solder layer is Sn-Ag-Cu, and the material of the ceramic layer is Al 2 O 3 The upper copper layer and the lower copper layer are made of Cu, and the TIM layer is made of heat-conducting silicone grease;
step 1.4: inputting Si, sn-Ag-Cu and Al 2 O 3 Data of density, thermal conductivity and constant pressure heat capacity of the thermally conductive silicone grease material.
3. The method for on-line monitoring the junction temperature of a power device in an inverter of a new energy automobile according to claim 2, wherein the step 2 comprises:
step 2.1: measuring the junction temperature of the device by adopting a small current saturation voltage drop method, switching on a small current after the load current of the device to be measured is cut off, measuring to obtain the saturation voltage drop at two ends of the device to be measured under the small current, and comparing the calibrated voltage Vce with the junction temperature T j Obtaining junction temperature according to the relation of the temperature;
the junction temperature is measured by saturation voltage drop under small current for calibration in advance, the tested device is passively heated by an electromagnetic oven, and the voltage Vce and the junction temperature T are recorded j Data, vce and T are obtained by linear fitting j The coefficient k between the two is expressed as follows:
T j ＝kVce+b
wherein b is a constant;
obtaining the voltage Vce and the junction temperature T j After the relation, junction temperature data of the device under the condition of cooling is measured;
step 2.2: calculating a transient thermal impedance curve under the condition of temperature reduction:
the transient thermal impedance curve is calculated according to the following formula:
wherein Z is th T is transient thermal impedance a The temperature of the water cooling plate is adjusted to be the ambient temperature, and P is the power loss;
step 2.3: calculating data under different coupling states, firstly measuring the junction temperature of each IGBT in a power module when the single IGBT works, calculating to obtain respective transient thermal impedance curves, and then measuring the junction temperature of the chip and new transient thermal impedance curves when the two IGBTs work until the junction temperature of the chip and the respective transient thermal impedance curves under the condition that the 6 IGBTs work and are coupled simultaneously;
step 2.4: obtaining transient thermal impedance curves of different conditions and reference points, namely changing the ambient temperature, namely adjusting the temperature of the water cooling plate and the heat dissipation condition, and repeating the step 2.3 to obtain new transient thermal impedance data.
4. The method for on-line monitoring the junction temperature of a power device in an inverter of a new energy automobile according to claim 3, wherein the step 3 comprises:
step 3.1: setting a current input/output end, a current flow path and an initial value of the current of the three-dimensional simulation analysis model; setting the bottom of the radiator as a boundary condition, setting a heat transfer coefficient, setting thermal expansion and electromagnetic heat in multiple physical fields as coupling, and adding a boundary probe at the chip;
step 3.2: the transient simulation is used for research, data of a three-dimensional simulation analysis model during chip cooling is read, and a simulated transient thermal impedance curve Z is obtained according to formula calculation th_t Comparing and analyzing two groups of transient thermal impedance curves obtained by experiments and simulation, if the transient thermal impedance curve data are different before 0.01s, adjusting the area and the thickness of a chip layer of a three-dimensional simulation analysis model, and adjusting Si, cu and Al according to the transient thermal impedance after 0.01s 2 O 3 Is modified by the thermal conductivity and heat capacity of the material.
5. The method for on-line monitoring the junction temperature of a power device in an inverter of a new energy automobile according to claim 4, wherein the step 4 comprises:
step 4.1: obtaining a calibrated transient thermal impedance curve Z th_1 、Z th_2 、Z th_3 、Z th_4 、Z th_5 、Z th_6 Establishing a self-impedance matrix Z self The expression is as follows;
when a loss is applied to chip n, the coupling thermal impedance between the temperature reference point and chip m is defined as follows:
wherein T is m For junction temperature of chip m, P n Power loss for chip n;
establishing a coupling thermal impedance matrix Z according to the calculated coupling thermal impedance of each chip couple ，Z couple The expression of (2) is as follows:
the chip junction temperature calculation expression when the thermal coupling influence is taken into account according to the superposition principle is as follows:
T j ＝(Z couple +Z self )P+T a
z in the thermal resistance matrix th Discretizing according to the actual sampling time to obtain a discretized thermal network for online junction temperature extraction;
step 4.2 in the Foster thermal network model, the thermal impedance parameter Z between the two is obtained by adopting multi-order exponential curve fitting th_m (t), namely:
wherein t is time, R i Is thermal resistance, n is fitting order, i is natural number i;
the time constant τ is determined by the thermal resistance and heat capacity of each stage, and the expression is:
τ i ＝R i C i
wherein C is i Is heat capacity;
fitting the self-heating impedance by adopting fourth-order RC to obtain R i 、C i The coupling thermal impedance is fitted by adopting a first-order RC to obtain respective coupling thermal resistance R (m，n) And coupled heat capacity C (m，n) 。
6. The method for on-line monitoring the junction temperature of a power device in an inverter of a new energy automobile according to claim 5, wherein the step 5 comprises:
step 5.1: verifying by experimental method, and intermittently turning on current I load Cycling the device to heat, turning off current I load Cooling the device; the on and off times are t respectively on And t off ，t on And t off The ratio of (2) is 1:2; at I load Measuring applied current I when turned off sense The voltage Vce across the lower device, according to Vce and T j Obtained and recorded the experimentally measured junction temperature T j_e ；
Measuring and obtaining the ambient temperature T a Will T a The values of (2) are brought into the established thermal network model, and whether the values are consistent with junction temperature fluctuation measured by experiments or not is verified;
step 5.2: verification by simulation, setting the current value I applied to the device load Determining t on 、t off At t on Time, heat the device under test, t off Temperature T of chip during temperature reduction j_t To be measured T j_t And comparing the calculated values with the two-dimensional thermal network model, and verifying whether the junction temperature fluctuation trend between the two is similar or not and whether the error is within 5%.
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