CN117038773A - Multichannel photoelectric detector based on micro-ring structure - Google Patents
Multichannel photoelectric detector based on micro-ring structure Download PDFInfo
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Abstract
The invention discloses a multichannel photoelectric detector based on a micro-ring structure, which comprises: the substrate comprises a top intrinsic layer, an oxygen burying layer and a bottom intrinsic layer from top to bottom in sequence; etching a multi-mode waveguide on the top intrinsic layer of the substrate to form a plurality of micro-ring structures positioned on two sides of the multi-mode waveguide; a light absorption layer grows on the micro-ring structure; respectively performing ion implantation on two sides of the micro-ring structure to form a P-type doped region and an N-type doped region; p is formed on the P-type doped region + Ohmic contact electrode for forming N on N-type doped region + And an ohmic contact electrode, wherein a potential difference exists between the P electrode and the N electrode to realize photoelectric conversion. The invention utilizes the enhancement effect of the micro-ring resonant cavity to improve the quantum efficiency and the response speed of the light absorbing layer by coupling the multimode waveguide with the micro-ring resonant cavity, and simultaneously does not detect through multiple channelsThe light of the same wavelength increases the absorption efficiency of the detector. The invention has simple process and high integration level, and is easy to integrate with optical communication devices to form an optoelectronic integrated circuit.
Description
Technical Field
The invention relates to the technical field of photoelectric detection, in particular to a multichannel photoelectric detector based on a micro-ring structure.
Background
With the development of social progress and scientific technology, optical communication technology plays an important role in the modern communication field as an important supporting platform for information technology. The optical communication technology is a communication mode using light as a transmission medium, and has the advantages of large communication capacity, low loss, long transmission distance, strong anti-interference capability and the like because the transmission efficiency of light waves is far higher than that of electric waves. The application and development space of the optical communication technology is very wide, and the optical communication technology becomes a main mode of modern communication, almost replaces the traditional copper cable communication technology and plays an important role in the modern information society. The method is applied to various fields of agriculture, military, medical treatment and the like at present, becomes an important way for improving communication quality and improving communication efficiency, and promotes social and economic development and scientific and technical progress.
In order to meet the information transmission requirements of larger capacity and longer communication distance, the form of the communication equipment is developed from a single channel to a multi-channel parallel transmission direction. Single channel conduction is susceptible to factors such as device size, carrier transit time, bit error rate and the like to limit data transmission flow, and multi-channel parallel transmission can multiply increase the data capacity of a communication system. In addition, the wavelength division multiplexing technology achieves higher data transmission rate by simultaneously transmitting optical signals with different wavelengths in the same optical fiber, and meets the increasing requirement of a data center on bandwidth.
The photoelectric detector is a device for converting radiation energy into an electric signal by utilizing a photoelectric effect, is a key device in an optical communication system, and plays a significant role in important fields such as communication, military, medical treatment, safety monitoring and the like. With the continuous emergence of various novel photoelectric materials, the continuous improvement of semiconductor preparation technology and the continuous innovation of novel structures, a series of performance parameters such as responsivity, quantum efficiency, sensitivity and the like of the photoelectric detector are greatly improved. For example, the resonant cavity enhancement type photoelectric detector with the absorption layer inserted into the resonant cavity can obtain higher quantum efficiency under a thinner absorption layer due to the enhancement effect of the resonant cavity, meanwhile, the transit time of photon-generated carriers in the absorption layer is reduced, and the response speed of the photoelectric detector is improved.
With the development of communication rate and communication quality, the demand for data capacity of communication systems has also increased greatly. In the wavelength division multiplexing system, the arrayed waveguide grating (Arrayed Waveguide Grating) refers to a grating formed by a group of arrayed waveguides with equal length differences, and can separate and transmit light with a plurality of channels, namely different wavelengths, into corresponding channels, so that the transmission capacity of an optical network is greatly increased, but the size is larger, the process compatibility and the integration level are smaller, and the manufacturing process is more difficult. In many cases, a single photo-detector can only detect one type of light, the stability is poor, the responsivity of light absorption is not high, and the system requirement cannot be met, so that an array photo-detector is generated, but the stability of the array photo-detector is low, and the manufacturing process is difficult. In order to meet the requirements of high conversion efficiency, low light energy loss, integration, miniaturization and the like of the photoelectric detector, the invention provides a multichannel photoelectric detector based on a micro-ring structure.
Disclosure of Invention
Aiming at the defects of the optical communication system, such as high capacity, high transmission rate, long-distance data transmission requirement and the problems, the invention provides a multichannel photoelectric detector based on a micro-ring structure.
In order to achieve the above object, the present invention discloses a multichannel photodetector based on a micro-ring structure, comprising:
the substrate comprises a top intrinsic layer, a buried oxide layer and a bottom intrinsic layer from top to bottom in sequence;
etching the top intrinsic layer of the substrate to form a multimode waveguide and a plurality of micro-ring structures with different thicknesses positioned on two sides of the multimode waveguide;
a light absorption layer grows on the micro-ring structure, and ion implantation is respectively carried out on two sides of the micro-ring structure to form a P-type doped region and an N-type doped region;
and forming a P+ ohmic contact electrode on the P-type doped region, and forming an N+ ohmic contact electrode on the N-type doped region, wherein a potential difference exists between the P electrode and the N electrode, so that photoelectric conversion is realized.
Preferably, the micro-ring radius is 10 -9 To 10 -7 On the order of meters, a thickness of 10 -9 To 10 -7 In the meter scale, processing techniques are compatible with complementary metal oxide semiconductor CMOS.
Preferably, the material forming the top intrinsic layer of the microring includes, but is not limited to, one of Si, ge, siC, gaN, gaP, gaAs, inP, inAs, inSb, inGaP.
Preferably, the multimode waveguide comprises the top intrinsic layer, a dielectric film on the intrinsic layer, and a cover film covering the dielectric film, the corresponding refractive indices being n 1 、n 2 、n 3 There is n 2 >n 1 >n 3 Light is confined to be transmitted within the dielectric film such that light of the primary mode and the plurality of higher order modes is transported within the waveguide simultaneously.
Preferably, the number of the micro-ring structures is 10-60.
Preferably, the input light enters the micro-ring structure through the multimode waveguide in an evanescent coupling mode.
Preferably, the distances between the micro-rings and the multimode waveguide are adjusted to enable the micro-rings and the multimode waveguide to be in a critical coupling state, namely, the coupling coefficient of the direct wave guide micro-ring is equal to the loss coefficient in the micro-ring, and the output of the micro-ring to the direct wave guide through end is equal to the output of the direct wave guide which is remained except for the coupling and enters the micro-ring, so that the output light of the waveguide through end is 0, and the light absorption is improved.
Preferably, the light absorbing layers have different thicknesses and absorb light of different wavelengths.
Preferably, the light absorbing layer material includes, but is not limited to, one of graphene, ge, gePb, gaAs, gaN, inAlAs, gaAsSb, gaInAsSb, gaInAsP, gaInP.
Preferably, the multichannel detector adopts semiconductor materials with different forbidden bandwidths to absorb light, so that the light absorption layer can detect light with different wavelengths.
Preferably, the method can be applied to an optical interconnection system of wavelength division multiplexing, and the multichannel parallel transmission is used for simultaneous detection, so that the data capacity of the communication system is improved, and the data is transmitted.
Compared with the prior art, the invention has the beneficial effects that:
the invention utilizes the enhancement effect of the micro-ring resonant cavity to improve the quantum efficiency and response speed of the light absorbing layer by coupling the multimode waveguide with the micro-ring resonant cavity, simultaneously detects light with different wavelengths through multiple channels, improves the absorption efficiency of the detector, can be applied to an optical interconnection system of wavelength division multiplexing, and increases the data transmission capacity in a communication system. The invention has simple preparation process, high integration level, low loss and high stability, and is easy to integrate with optical communication devices to form an optoelectronic integrated circuit.
Drawings
FIG. 1 is a perspective view of a multichannel photodetector based on a micro-ring structure;
FIG. 2 is a schematic view of a cross-sectional structure along the x-z axis of the dashed line L in FIG. 1;
FIG. 3 is a schematic top view of the x-y axis of FIG. 1;
FIG. 4 is a flow chart of the fabrication of a multi-channel photodetector based on a micro-ring structure according to the present invention;
FIG. 5 is a schematic diagram of the transmission of light of multiple wavelengths in a multimode waveguide and microring structure;
FIG. 6 is a graph of transmission spectrum of a silicon micro-ring with a 500nm micro-ring width and a 20 μm radius for a multimode waveguide;
FIG. 7 is a schematic view of the light field distribution of the micro-ring along the longitudinal section in the radial direction;
FIG. 8 is a schematic diagram of a simulation of the intensity FDTD of the micro-ring cross-section light field;
fig. 9 is an SEM image of the micro-ring structure.
Reference numerals:
101. a multimode waveguide; 102. a substrate; 1021. a top intrinsic layer; 1022. an oxygen burying layer; 1023. a bottom intrinsic layer; 103. a micro-ring; 104. a light absorbing region; 105. an n-type doped region; 106. a p-type doped region; 107. an n-electrode; 108. and a p electrode.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The invention is described in further detail below with reference to the attached drawing figures:
referring to fig. 1-3, the present invention provides a multi-channel photodetector based on a micro-ring structure, comprising: multimode waveguide 101, substrate 102, microring 103, light absorbing region 104, n-type doped region 105, p-type doped region 106, n-electrode 107, p-electrode 108; wherein,
the substrate 102 of the present invention comprises, in order from top to bottom, a top intrinsic layer 1021, a buried oxide layer 1022, and a bottom intrinsic layer 1023; specifically, the material of the top intrinsic layer 1021 includes, but is not limited to, one of Si, ge, siC, gaN, gaP, gaAs, inP, inAs, inSb, inGaP.
In the present invention, a multimode waveguide 101 and a plurality of microrings 103 with different thicknesses are etched on the top intrinsic layer 1021 of the substrate 102, which is located on both sides of the multimode waveguide 101. Specifically, the multimode waveguide 101 is formed by a refractive index n 1 Is used as a substrate, a dielectric film with a refractive index of n is coated on the top intrinsic layer 1021 by a microelectronic process 2 Plus a refractive index of n 3 Is made of a cover layer of (a). Wherein n is 2 >n 1 >n 3 The light is limited to be transmitted in the dielectric film, so that the light of the main mode and the plurality of higher modes is simultaneously transmitted in the waveguide, and the requirement of the data transmission system for large capacity can be better met. Microring 103 has a radius of 10 -9 To 10 -7 On the order of meters, a thickness of 10 -9 To 10 -7 In the order of meters. In a specific embodiment, the multimode waveguide 101 has a width of 500nm, the silicon microring 103 has a radius of 200nm and a thickness of 130nm, and the processing technique is compatible with complementary metal oxide semiconductor CMOS.
In the invention, a light absorption layer 104 grown on a micro-ring 103 is a light absorption region of a detector, and two sides of the micro-ring 103 are respectively provided with an n-type doped region 105 and a p-type doped region 106. Specifically, the multimode waveguide 101 and a plurality of micro-rings 103 with different thicknesses are formed on the top intrinsic layer 1021 by deep ultraviolet lithography and etching, and the thicknesses of the micro-rings 103 are h respectively 1 、h 2 、h 3 Etc. Then, a light absorbing layer 104 with the same thickness is grown on the micro-ring 103, and the micro-ring 103 and the light absorbing layer 104 are polished to the same thickness by a polishing method, namely the total thickness of the micro-ring 103 and the light absorbing layer 104 is H.
Input light enters the light absorption layer 104 by the multimode waveguide 101 through an evanescent wave coupling mode to be absorbed, and carriers are generated by utilizing a photoelectric conversion effect. The distance between the micro-ring 103 and the multimode waveguide 101 is adjusted, and the distance between the micro-ring 103 and the multimode waveguide 101 is controlled to make the intrinsic loss and the coupling loss of the micro-ring 103 equal, that is, the coupling coefficient of the multimode waveguide 101 to the micro-ring 103 is equal to the loss coefficient in the micro-ring, so that the output light of the through end of the multimode waveguide 101 is 0 and is in a critical coupling state. The enhancement effect of the micro-ring resonant cavity enables absorbed light to obtain higher quantum efficiency in the thinner micro-ring 103, meanwhile, the transit time of photon-generated carriers is reduced, and the response speed of the photoelectric detector is improved. In addition, the micro-ring is an absorption multiplication separation structure, so that the high-efficiency multiplication of the photon-generated carriers can be realized.
In the present invention, an n-electrode 107 and a p-electrode 108 are formed by sputtering on an n-type doped region 105 and a p-type doped region 106. Specifically, to form a good ohmic contact, the n-type doped region 104 and the p-type doped region 105 are heavily doped to reduce dark current and improve responsiveness, and a potential difference exists between the p-electrode 106 and the n-electrode 107 to realize photoelectric conversion.
In the invention, the number of the micro-rings 103 is 10-60, and the multichannel detector adopts semiconductor materials with different forbidden bandwidths as the light absorption layer 104 to absorb light, so that the light absorption layer 104 can detect light with different wavelengths. The multichannel detection is realized, and the transmission data capacity and the transmission rate are further improved. Specifically, the light absorbing layer 104 material includes, but is not limited to, one of graphene, ge, gePb, gaAs, gaN, inAlAs, gaAsSb, gaInAsSb, gaInAsP, gaInP.
The invention can be applied to the optical interconnection system of wavelength division multiplexing, and the multichannel parallel transmission is detected simultaneously, thereby improving the data capacity and the transmission rate of the communication system. In a wavelength division multiplexing system, an arrayed waveguide grating (Arrayed Waveguide Grating) refers to a grating formed by a group of arrayed waveguides having equal length differences, and can separate and transmit light of a plurality of channels, i.e., different wavelengths, into corresponding channels, so that the transmission capacity of an optical network is increased. Compared with the AWG, the invention has the advantages of miniaturization, simple preparation process, obvious enhancement of optical field distribution in the micro-ring 103 and the light absorption layer 104 by utilizing the resonance enhancement function of the micro-ring resonant cavity, and high absorption efficiency and high responsivity due to the multiplication function of photo-generated carriers in the n-type doped region 105 and the p-type doped region 106. By the structure, the parallel transmission of light in the micro-rings 103 and the multimode waveguide 101 enables light with multiple modes to be absorbed by the light absorbing layer 104, so that the light absorbing efficiency is improved, and multichannel detection is realized. The invention has simple preparation process, high integration level, low loss and high stability, and is easy to integrate with optical communication devices to form an optoelectronic integrated circuit.
Referring to fig. 4, the present invention provides a method for manufacturing a multi-channel photodetector based on a micro-ring structure,
the initial structure is a substrate, and the substrate 102 sequentially comprises a top intrinsic layer 1021, an oxygen-buried layer 1022 and a bottom intrinsic layer 1023 from top to bottom, as shown in the first figure structure in fig. 4;
step 1: spin-coating photoresist on the top intrinsic layer 1021, performing deep ultraviolet lithography, and etching to form the multimode waveguide 101 and a plurality of micro-rings 103 with different heights, wherein the purpose of etching is as follows: setting the transmission direction of light, allowing the light to effectively pass through the channel, and processing and manufacturing different optical waveguide devices on the set channel so as to modulate, split beams, switch and detect the optical signal, as shown in the second graph structure in fig. 4;
step 2: selecting a light absorption layer 104 with the same thickness for epitaxial growth on the micro-ring 103 formed by etching, as shown in a third graph structure in fig. 4;
step 3: polishing and grinding the micro-ring structure with the light absorbing layer 104 grown thereon to make the total thickness of the micro-ring structures the same, as shown in a fourth graph structure in fig. 4;
step 4: ion implanting donor impurity ions inside the micro-ring 103 to form an n-type doped region 105, as shown in the fifth structure in fig. 4;
step 5: acceptor impurity ion implantation is performed outside the micro-ring 103 to form a p-type doped region 106, as shown in the sixth structure in fig. 4;
step 6: openings are etched in the n-type doped region 105 and the p-type doped region 106, metal is evaporated and stripped to form an n-electrode 107 and a p-electrode 108, as shown in the seventh structure in fig. 4.
Referring to fig. 5, in a specific embodiment, light with different wavelengths is transmitted in a multimode waveguide 101, enters a micro-ring 103 through an evanescent coupling mode, and is absorbed by light absorbing layers 104 with different band gap widths, so as to realize simultaneous detection of multiple channels.
The working principle of the invention is as follows:
the input light is transmitted in parallel in the multimode waveguide, part of the light enters the micro-ring structure through an evanescent wave coupling mode and is absorbed by the light absorbing layer 104 to generate carriers through photoelectric effect, the carriers are accelerated to form more freely moving electron hole pairs under the action of a high electric field, current is generated, and the current is led out through the n electrode 107 and the p electrode 108. The heterojunction epitaxial technology is combined, the light absorption layer 104 is integrated above the micro-ring 103, semiconductors with different forbidden bandwidths are used for light absorption, and the light with different wavelengths can be detected by utilizing the fact that the light absorption layers with different thicknesses correspond to different optical path differences, so that multichannel detection is achieved.
Referring to FIG. 6, a graph of transmission spectrum of a silicon micro-ring with a multi-mode waveguide width of 500nm, a micro-ring radius of 200nm, and a micro-ring thickness of 130nm is shown, wherein the abscissa represents wavelength and the ordinate represents transmittance. Referring to fig. 7, a schematic diagram of the distribution of the light field of the longitudinal section of the single micro-ring 103 along the radial direction is shown, and referring to fig. 8, a simulation diagram of the intensity FDTD of the light field of the longitudinal section of the single micro-ring 103 along the radial direction is shown, and it can be observed that the micro-ring 103 has a better absorption effect.
Referring to fig. 9, an SEM image of the micro-ring structure 103 is shown, and the micro-ring structure is small in size and high in integration.
The invention has the advantages that:
the invention can simultaneously detect light with different wavelengths through multiple channels by coupling the multimode waveguide with the micro-ring resonant cavity, thereby improving the light absorption efficiency of the detector; the detector has simple preparation process and high stability, and is easy to integrate with an optical communication device to form an optoelectronic integrated circuit.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A multi-channel photodetector based on a micro-ring structure, comprising:
the substrate comprises a top intrinsic layer, a buried oxide layer and a bottom intrinsic layer from top to bottom in sequence;
etching the top intrinsic layer of the substrate to form a multimode waveguide and a plurality of micro-ring structures with different thicknesses positioned on two sides of the multimode waveguide;
a light absorption layer grows on the micro-ring structure, and ion implantation is respectively carried out on two sides of the micro-ring structure to form a P-type doped region and an N-type doped region;
wherein, P is formed on the P-type doped region + Ohmic contact electrode for forming N on the N-type doped region + And the ohmic contact electrode is used for realizing photoelectric conversion by the potential difference between the P electrode and the N electrode.
2. The micro-ring structure based multi-channel photodetector of claim 1, wherein said micro-ring radius is 10 -9 To 10 -7 On the order of meters, a thickness of 10 -9 To 10 -7 In the order of meters.
3. The micro-ring structure based multi-channel photodetector of claim 1 wherein said material forming the top intrinsic layer of the micro-ring comprises one of Si, ge, siC, gaN, gaP, gaAs, inP, inAs, inSb, inGaP.
4. The micro-ring structure based multi-channel photodetector of claim 1, wherein said multimode waveguide comprises said top intrinsic layer, a dielectric film on said intrinsic layer, and a cover film covering said dielectric film, the corresponding refractive indices being n, respectively 1 、n 2 、n 3 There is n 2 >n 1 >n 3 Light is confined to be transmitted within the dielectric film such that light of the primary mode and the plurality of higher order modes is transported within the waveguide simultaneously.
5. The multi-channel photodetector based on a micro-ring structure according to claim 1, wherein the number of the micro-ring structures is 10-60.
6. The micro-ring structure based multichannel photodetector of claim 1, wherein input light is coupled into the micro-ring structure by evanescent coupling from the multimode waveguide.
7. The micro-ring structure based multichannel photodetector of claim 1, wherein the plurality of micro-rings are placed in a critical coupling state by adjusting the distance between the two.
8. The micro-ring structure based multichannel photodetector of claim 1, wherein the light absorbing layers have different thicknesses and absorb light of different wavelengths.
9. The micro-ring structure based multichannel photodetector of claim 8, wherein said light absorbing layer material comprises one of graphene, ge, gePb, gaAs, gaN, inAlAs, gaAsSb, gaInAsSb, gaInAsP, gaInP.
10. The micro-ring structure based multichannel photodetector of claim 9, wherein the multichannel detector employs semiconductor materials with different forbidden bandwidths for light absorption, such that the light absorption layer detects light of different wavelengths.
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