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CN116759399A - IGBT packaging structure, semiconductor device and packaging method - Google Patents

IGBT packaging structure, semiconductor device and packaging method Download PDF

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Publication number
CN116759399A
CN116759399A CN202310909143.3A CN202310909143A CN116759399A CN 116759399 A CN116759399 A CN 116759399A CN 202310909143 A CN202310909143 A CN 202310909143A CN 116759399 A CN116759399 A CN 116759399A
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CN
China
Prior art keywords
bonding
electrode
igbt
planar electrode
bond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310909143.3A
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Chinese (zh)
Inventor
张佳佳
符超
万今明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gree Electric Appliances Inc of Zhuhai
Original Assignee
Gree Electric Appliances Inc of Zhuhai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gree Electric Appliances Inc of Zhuhai filed Critical Gree Electric Appliances Inc of Zhuhai
Priority to CN202310909143.3A priority Critical patent/CN116759399A/en
Publication of CN116759399A publication Critical patent/CN116759399A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/4952—Additional leads the additional leads being a bump or a wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention discloses an IGBT packaging structure, a semiconductor device and a packaging method, wherein the packaging structure comprises a plastic packaging frame, an electrode bonding part, a planar electrode and a bonding piece; a wafer bonding area is arranged in the plastic package frame, and the top of the frame is a packaging surface; the electrode bonding part is arranged on the wafer bonding area; the plane electrode is arranged on the surface of the package; the bonding piece is arranged between the wafer bonding area and the plane electrode, and two ends of the bonding piece are respectively and electrically connected with the electrode bonding part and the plane electrode. According to the packaging structure, the plane electrode is arranged on the packaging surface above the wafer bonding area, the bonding piece is arranged between the wafer bonding area and the plane electrode, the two ends of the bonding piece are electrically connected to the electrode bonding part and the plane electrode to realize the electrical connection of the IGBT, the contact area of the bonding part is increased, the heat aggregation effect of the bonding part is effectively slowed down, and the heat dissipation performance of the IGBT is better when the IGBT works.

Description

IGBT packaging structure, semiconductor device and packaging method
Technical Field
The present invention relates to the field of semiconductor device packaging technology, and in particular, to an IGBT packaging structure, a semiconductor device, and a packaging method.
Background
In recent years, insulated gate bipolar transistor IGBT has developed rapidly, and is widely applied to the fields of alternating current motors, variable frequency air conditioners, switching power supplies, traction transmission, high-speed rail transportation and the like. And with the improvement of application demands, the power and switching frequency of the IGBT are further improved, so that the heat generation is greatly increased, and the heat dissipation capability of the IGBT becomes an important reason for limiting the application of the IGBT. As shown in fig. 7, the conventional IGBT device is packaged by encapsulating the IGBT chip and the FWD (flywheel diode chip), and the electrode bonding portion is led out to the lead through wire bonding, so that the package structure has a serious heat dissipation problem, especially, the IGBT has a more prominent heat dissipation problem under the working condition of high power and high frequency, and the first bonding point of the bonding wire has a serious heat aggregation effect, so that the bonding point has poor bonding due to heat aggregation, increases contact resistance, causes serious heat dissipation, and is very easy to burn the device along with the extension of the service life.
Disclosure of Invention
The embodiment of the invention provides an IGBT packaging structure, a semiconductor device and a packaging method, which solve the problem that the heat accumulation effect at the electrode bonding position in the prior art seriously causes the serious heating of an IGBT.
In a first aspect, an embodiment of the present invention provides an IGBT package structure, including a plastic package frame, an electrode bonding portion, a planar electrode, and a bonding member; a wafer bonding area is arranged in the plastic package frame, and the top of the plastic package frame is a package surface; the electrode bonding part is arranged on the wafer bonding area; the plane electrode is arranged on the packaging surface; the bonding piece is arranged between the wafer bonding area and the planar electrode, and two ends of the bonding piece are respectively and electrically connected with the electrode bonding part and the planar electrode.
In the IGBT packaging structure provided by the embodiment of the invention, the electrode bonding portion includes an emitter bonding portion, the bonding member includes a first bonding post, the planar electrode includes a first planar electrode, and two ends of the first bonding post are respectively fixed to the emitter bonding portion and the first planar electrode.
In the IGBT packaging structure provided by the embodiment of the invention, the electrode bonding portion further includes a FWD negative electrode bonding portion, the bonding member further includes a second bonding post, the second bonding post is disposed at an interval from the first bonding post, and two ends of the second bonding post are respectively fixed to the FWD negative electrode bonding portion and the first planar electrode.
In the IGBT packaging structure provided by the embodiment of the invention, the first planar electrode includes a first side and a second side opposite to each other, the first side extends toward one side edge of the plastic package frame, the second side extends toward the other side edge opposite to the plastic package frame, and the first bonding post and the second bonding post are respectively fixed to the first side and the second side.
In the IGBT packaging structure provided by the embodiment of the invention, the electrode bonding portion further includes a collector electrode bonding portion, the planar electrode includes a second planar electrode, the bonding member includes a third bonding column, and two ends of the third bonding column are respectively fixed to the second planar electrode and the collector electrode bonding portion.
In the IGBT packaging structure provided by the embodiment of the invention, the electrode bonding portion further includes a gate bonding portion, the bonding member includes a fourth bonding post, the planar electrode includes a third planar electrode, and two ends of the fourth bonding post are respectively fixed to the gate bonding portion and the third planar electrode.
In the IGBT packaging structure provided by the embodiment of the invention, at least one side of the planar electrode extends to the edge of the plastic package frame.
In the IGBT packaging structure provided by the embodiment of the invention, the IGBT packaging further includes a copper substrate, and the copper substrate is laid on the wafer bonding region around the electrode bonding portion.
In a second aspect, an embodiment of the present invention provides a semiconductor device, where the semiconductor device includes the IGBT packaging structure described in the first aspect.
In a third aspect, an embodiment of the present invention provides a packaging method, where the method uses the IGBT packaging structure provided by the embodiment of the present invention to package, where the method includes: welding the electrode bonding part and the bonding piece and the planar electrode; plastic packaging, and filling plastic packaging materials; drying and solidifying into gel.
The embodiment of the invention provides an IGBT packaging structure, a semiconductor device and a packaging method, wherein the packaging structure comprises a plastic packaging frame, an electrode bonding part, a planar electrode and a bonding piece; a wafer bonding area is arranged in the plastic package frame, and the top of the plastic package frame is a package surface; the electrode bonding part is arranged on the wafer bonding area; the plane electrode is arranged on the packaging surface; the bonding piece is arranged between the wafer bonding area and the planar electrode, and two ends of the bonding piece are respectively and electrically connected with the electrode bonding part and the planar electrode. According to the packaging structure, the plane electrode is arranged on the packaging surface above the wafer bonding area, the bonding piece is arranged between the wafer bonding area and the plane electrode, the two ends of the bonding piece are electrically connected to the electrode bonding part and the plane electrode to realize the electrical connection of the IGBT, the contact area of the bonding part is increased, the heat aggregation effect of the bonding part is effectively slowed down, and the heat dissipation performance of the IGBT is better when the IGBT works.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an IGBT package structure according to an embodiment of the present invention;
fig. 2 is an enlarged view of a portion a of fig. 1;
fig. 3 is a schematic structural diagram of a plastic package frame according to an embodiment of the present invention;
fig. 4 is a schematic perspective view of an IGBT package according to an embodiment of the present disclosure;
fig. 5 is an enlarged view of a portion B of fig. 4;
fig. 6 is an isometric view of an IGBT package according to an embodiment of the invention;
fig. 7 is a schematic diagram of a bonding structure of a conventional IGBT package according to an embodiment of the present invention;
fig. 8 is a schematic flow chart of steps of a packaging method according to an embodiment of the present invention;
the reference numerals in the drawings are as follows:
10. a plastic package frame; 11. a wafer bonding region; 12. a package surface; 20. an electrode bonding portion; 201. an emitter bonding portion; 202. FWD negative electrode bonding portions; 203. a collector bonding portion; 204. a gate bonding portion; 30. a planar electrode; 31. a first planar electrode; 311. a first side; 312. a second side; 32. a second planar electrode; 33. a third planar electrode; 40. a bonding member; 401. a first bond post; 402. a second bond post; 403. a third bond column; 404. a fourth bond post; 50. a copper substrate.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The terms of directions used in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., refer only to the directions of the attached drawings. Accordingly, directional terminology is used to describe and understand the invention and is not limiting of the invention. In addition, in the drawings, structures similar or identical to those of the drawings are denoted by the same reference numerals.
Referring to fig. 1 to 7, and particularly to fig. 1 and 2, an embodiment of an IGBT package structure provided by the present invention is shown, and a structure and an operation principle of the IGBT package structure are described in detail below with reference to the accompanying drawings. The IGBT packaging structure comprises a plastic package frame 10, an electrode bonding part 20, a planar electrode 30 and a bonding piece 40; a wafer bonding area 11 is arranged in the plastic package frame 10, and the top of the plastic package frame 10 is provided with a package surface 12; the electrode bonding part 20 is arranged on the wafer bonding area 11; the planar electrode 30 is disposed on the package surface 12; the bonding member 40 is disposed between the wafer bonding region 11 and the planar electrode 30, and two ends of the bonding member are electrically connected to the electrode bonding portion 20 and the planar electrode 30, respectively.
In this embodiment, referring to fig. 3, the plastic package frame 10 is a main body frame of IGBT (InsulatedGateBipolar Transistor), in which IGBT chips, diode chips, FWD (freewheeling diodes) and the like for realizing the IGBT functions are included, and in addition, the plastic package frame 10 further includes a structure such as a solder layer, an interconnection wire and the like, the plastic package frame 10 can be designed by a plastic package material such as epoxy resin in a filling manner, so that an internal wafer can be wrapped and protected, the device is prevented from being interfered by an external environment, corrosion of moisture, corrosive gas and the like is avoided, the wafer bonding area 11 is a planar area inside the plastic package frame 10, all electrodes inside the IGBT are distributed in the area, the electrode bonding portion 20 is a portion of an internal electrode for connection bonding with the outside, the electrode bonding portion is substantially a metal layer of the internal electrode distributed in the wafer bonding area 11, each electrode corresponds to the electrode bonding portion 20 of one metal layer, and each electrode bonding portion 20 occupies a certain area.
In this embodiment, referring to fig. 6, the planar electrode 30 is a layer of metal sheet structure fixed on the package surface 12 of the plastic package frame 10, which is located vertically above the wafer bonding area 11 and is kept relatively parallel to the wafer bonding area 11, the planar electrode 30 is used as a structure for external connection, and a metal material with good conductivity such as copper or aluminum can be used, which can be directly led out to the outside of the plastic package frame 10 as an external pin of the IGBT device, and the specific shape of the led-out portion can be freely designed according to practical needs.
In this embodiment, referring to fig. 2, 4 and 5, the bonding element 40 is disposed between the wafer bonding region 11 and the planar electrode 30, the shape of the bonding element 40 is generally fixed, and it has a conductor structure with a certain length and width, generally a strip or column structure is adopted, and a metal material with good conductivity, such as copper, aluminum, etc. can be adopted for design, one end of the bonding element 40 is connected to the electrode bonding portion 20, the other end is connected to the face of the planar electrode 30 facing downward, the electrodes in the IGBT are electrically connected with the planar electrode 30 through the bonding element 40, the bonding elements 40 corresponding to each electrode bonding portion 20 are mutually independent, so that the arc pulling phenomenon between the electrodes of the IGBT under the large voltage condition can be effectively avoided, the bonding connection process is mainly adopted for design, the bonding element 40 is directly formed by metal deposition, a space is reserved between the electrode bonding part 20 and the plane electrode 30 during encapsulation, metal deposition is carried out on the electrode bonding part 20 in the reserved space until the encapsulation surface 12 is connected with the plane electrode 30, a layer of uniform, compact and good-adhesion metal film is formed on the surface of the bonding part 40 which is formed by deposition into a fixed shape, the characteristics of corrosion resistance, wear resistance, conductivity and the like of the bonding part 40 can be effectively improved, the size of the connecting end part of the bonding part 40 is matched with the size of the whole area of the electrode bonding part 20, the end face of the connecting end of the bonding part 40 covers the metal layer area of the electrode bonding part 20 as much as possible, the contact can be more sufficient, other processes can be adopted for connection bonding, such as welding the two ends of the bonding part 40 with the fixed shape onto the electrode bonding part 20 and the plane electrode 30 respectively through a welding process, after the connection bonding is completed, the current flow of the IGBT is the electrode bonding portion 20-bonding member 40-planar electrode 30, and compared with the conventional wire bonding structure shown in fig. 7, the bonding distance between the electrode and the lead is reduced, the width of the lead is increased, the contact area at the bonding portion is increased, and the bonding reliability is improved.
By implementing the embodiment, the contact area of the bonding part 40, the electrode bonding part 20 and the bonding part of the planar electrode 30 is increased, the heat aggregation effect of the bonding part is effectively slowed down, the defect that the heat aggregation effect of the bonding part is serious in the traditional wire bonding mode is overcome, and the heat dissipation performance of the IGBT is better when in operation.
In an embodiment, referring to fig. 1 to 5, the electrode bonding part 20 includes an emitter bonding part 201, the bonding member 40 includes a first bonding post 401, the planar electrode 30 includes a first planar electrode 31, and both ends of the first bonding post 401 are fixed to the emitter bonding part 201 and the first planar electrode 31, respectively. Specifically, the emitter bonding portion 201 is a metal layer with an emitter disposed on the wafer bonding region 11, the first planar electrode 31 is disposed vertically above the emitter bonding portion 201 and is a metal sheet with good conductivity, the side edge of the first planar electrode 31 can be led out to the outside of the plastic package frame 10 to serve as a lead of the emitter of the IGBT, the external shape can be designed arbitrarily according to welding application requirements, the first bonding column 401 adopts a columnar metal structure, specific materials adopt aluminum, the metal aluminum is connected and bonded through a deposition process, or other metal materials or other processes can be adopted to connect and bond, one end of the first bonding column 401 is connected to the emitter bonding portion 201, the other end is connected to one side of the first planar electrode 31, the whole first bonding column 401 and the wafer bonding region 11 and the first planar electrode 31 are kept in a relatively vertical state, the first planar electrode 31 and the emitter bonding portion 201 are electrically connected, the end faces of the two ends of the first bonding column 401 can be in contact with the emitter bonding portion 201 and the first planar electrode 31, compared with the conventional emitter bonding wire 31, the current can be kept in a larger contact area, and the heat dissipation effect of the IGBT can be slowed down, compared with the conventional bonding wire, and the current can be more effectively bonded.
Further, referring to fig. 4, the electrode bonding portion 20 further includes a FWD negative electrode bonding portion 202, the bonding member 40 further includes a second bonding post 402, the second bonding post 402 is spaced from the first bonding post 401, and two ends of the second bonding post 402 are fixed to the FWD negative electrode bonding portion 202 and the first planar electrode 31, respectively. Specifically, the FWD negative electrode bonding portion 202 is a metal layer of a freewheeling diode in the IGBT and disposed on the wafer bonding region 11, because of the structural requirement, the FWD negative electrode in the IGBT is connected to the emitter of the IGBT, where the overall area of the first planar electrode 31 is relatively large, both the FWD negative electrode bonding portion 202 and the emitter bonding portion 201 are located in the area below the first planar electrode 31 at the same time, the second bonding post 402 may be made of the same material and by the same connection process as the first bonding post 401, one end of the second bonding post 402 is connected to the FWD negative electrode bonding portion 202, the other end is connected to the downward side of the first planar electrode 31, the second bonding post 402 is horizontally spaced from the first bonding post 401 by a certain distance, the overall is also kept in a relatively vertical state with the wafer bonding region 11 and the first planar electrode 31, the first planar electrode 31 is electrically connected to the FWD negative electrode bonding portion 202, the d negative electrode bonding portion 202 is connected to the emitter bonding portion 201 through the first planar electrode 31, and the second bonding post 402 is connected to the emitter bonding portion 401 by the first planar electrode 31, and the second bonding post 402 is able to have a more stable thermal contact performance with the first electrode bonding post 31, and the second bonding post has a more stable thermal performance, and the thermal bonding effect can not be provided at the two ends of the IGBT bonding electrode bonding portion.
In an embodiment, referring to fig. 6, the first planar electrode 31 includes a first side 311 and a second side 312 opposite to each other, the first side 311 extends toward one side edge of the plastic package frame 10, the second side 312 extends toward the other opposite side edge of the plastic package frame 10, and the first bonding post 401 and the second bonding post 402 are fixed to the first side 311 and the second side 312, respectively. Specifically, the planar electrode 30 is in a sheet shape, the first side 311 and the second side 312 are two opposite sides of the planar electrode 30, the two sides extend horizontally towards two opposite side edges of the plastic package frame 10, an end portion of an upward end of the first bonding column 401 is fixedly connected to the first side 311, an end portion of an upward end of the second bonding column 402 is fixedly connected to the second side 312, end portions of upward ends of the first bonding column 401 and the second bonding column 402 are mainly connected to an edge portion of the first planar electrode 31, a certain distance is formed between the first side 311 and the second side 312, a design space is reserved between the first bonding column 401 and the second bonding column 402, and therefore the cross section design of the first bonding column and the second bonding column is larger, the contact area of a bonding position is increased, the heat aggregation effect of the bonding position is slowed down, and the overall heat dissipation performance of the IGBT is better.
In an embodiment, referring to fig. 1 to 5, the electrode bonding part 20 further includes a collector bonding part 203, the planar electrode 30 includes a second planar electrode 32, the bonding member 40 includes a third bonding post 403, and both ends of the third bonding post 403 are respectively fixed to the second planar electrode 32 and the collector bonding part 203. Specifically, the collector bonding portion 203 is a metal layer in which the collector inside the IGBT is disposed on the wafer bonding region 11, the second planar electrode 32 is disposed vertically above the collector bonding portion 203 and is a metal sheet with good conductivity, the side edge of the second planar electrode 32 can be led out to the outside of the plastic package frame 10 to serve as a pin of the collector of the IGBT, the external shape can be designed arbitrarily according to the welding application requirement, the third bonding column 403 adopts a columnar metal structure, the material can adopt metal aluminum, the metal aluminum is bonded by a deposition process, or other metal materials or other processes can be used for bonding, one end of the third bonding column 403 is fixedly connected to the collector bonding portion 203, the other end is fixedly connected to one side of the second planar electrode 32, the whole third bonding column 403 keeps a relatively vertical state with the wafer bonding region 11 and the second planar electrode 32, the second planar electrode 32 is electrically connected with the collector bonding portion 203, the end surfaces of the two ends of the third bonding column 403 can keep larger contact with the collector bonding portion 203 and the second planar electrode 32, and have a larger contact area with the collector bonding electrode and a larger current emission and emission performance of the collector are reduced compared with a conventional collector bonding method.
In an embodiment, referring to fig. 1 to 5, the electrode bonding part 20 further includes a gate bonding part 204, the bonding member 40 includes a fourth bonding post 404, the planar electrode 30 includes a third planar electrode 33, and both ends of the fourth bonding post 404 are respectively fixed to the gate bonding part 204 and the third planar electrode 33. Specifically, the gate bonding portion 204 is a metal layer with an internal gate electrode of the IGBT disposed on the wafer bonding region 11, the third planar electrode 33 is disposed vertically above the gate bonding portion 204, and is a metal sheet with good conductivity, the side edge of the third planar electrode 33 can be led out to the outside of the plastic package frame 10 to serve as a lead of the gate electrode of the IGBT, the external shape can be designed arbitrarily according to the welding application requirement, the fourth bonding column 404 adopts a columnar metal structure, the material can adopt metal aluminum, the metal aluminum is connected and bonded through a deposition process, other metal materials or other processes can be adopted to connect and bond, one end of the fourth bonding column 404 is fixedly connected to the gate bonding portion 204, the other end is fixedly connected to one side of the third planar electrode 33, the whole of the fourth bonding column 404 is electrically connected with the gate bonding region 11 and the third planar electrode 33 in a relatively vertical state, the end faces of both ends of the fourth bonding column 404 can be in a larger contact with the gate bonding portion 204 and the third planar electrode 33, and the IGBT can be more controlled to be more frequently opened and closed than the gate electrode 33, and the IGBT can be more frequently opened and closed as compared with the conventional IGBT, and the IGBT can be controlled in a high-frequency and more frequent-phase-off state.
In one embodiment, referring to fig. 6, at least one side of the planar electrode 30 extends to an edge of the plastic package frame 10. Specifically, the planar electrode 30 is in a metal sheet shape, and is laid on the packaging surface 12 of the plastic packaging frame 10, the side edge of the planar electrode 30 can extend to the edge of the plastic packaging frame 10, one side edge of the planar electrode 30 can extend to the edge of the plastic packaging frame 10, or two side edges of the planar electrode 30 can extend to the edge of the plastic packaging frame 10, as long as the extending side edges of the planar electrode 30 are reasonably arranged on the packaging surface 12 without exceeding the edge range of the plastic packaging frame 10, the whole area of the planar electrode 30 can be larger, electrons passing through the planar electrode 30 in unit area can be reduced when current flows through the planar electrode 30, and the whole heat dissipation capability of the IGBT can be effectively improved.
In an embodiment, referring to fig. 3 to 5, the IGBT package further includes a copper substrate 50, and the copper substrate 50 is laid on the wafer bonding region 11 around the electrode bonding portion 20. Specifically, the copper substrate 50 is electrically connected with the collector inside the IGBT and the anode of the freewheeling diode, which provides forward voltage for the IGBT and the freewheeling diode, the copper substrate 50 is made of metallic copper, is in a thin plate shape, is integrally tiled on the whole wafer bonding region 11, is arranged around the electrode bonding portion 20, forms a gap at the bonding position of the bonding piece 40 and the electrode bonding portion 20, and keeps separation from the electrode bonding portion 20, so as to prevent the plurality of electrode bonding portions 20 and the bonding piece 40 from being connected together to generate short circuit, and heat generated at the bonding position and other positions is uniformly absorbed by the surface of the copper substrate 50 when the IGBT works, so that the copper substrate 50 effectively disperses the heat and improves the heat dissipation capability of the IGBT.
In an embodiment, a semiconductor device is provided, and the semiconductor device is packaged by using the above IGBT packaging structure to implement semiconductor functions such as amplifying signals, controlling currents, converting signals, etc., and since the specific structure and the working principle of the IGBT packaging structure have been described in detail in the foregoing description, the description is omitted herein for brevity.
The semiconductor device in the embodiment has the advantages that the contact area of the bonding part of the electrode and the chip inside the device is increased due to the adoption of the IGBT packaging structure provided by the invention, the heat dissipation performance is improved, and the semiconductor device has wider application in practice.
In an embodiment, referring to fig. 8, fig. 8 is a schematic step flow diagram of a packaging method of the present embodiment, where the IGBT packaging method is used for manufacturing the package of the above IGBT packaging structure, and the method includes the steps of: S1-S3.
S1: welding the electrode bonding part and the bonding piece and the planar electrode;
s2: plastic packaging, and filling plastic packaging materials;
s3: drying and solidifying into gel.
It should be noted that, before step S1, the steps of material preparation, material selection, welding of functional devices, welding of internal leads and the like are further included, specifically, the bonding piece can be made of metal aluminum or metal copper, and is made into a square column or cylindrical shape, in order to facilitate welding operation, one ends of all the bonding pieces are welded to corresponding electrode bonding portions, then plane electrodes are welded to the other ends of all the bonding pieces, care needs to be taken, during welding, metal layers covering the welding ends of the bonding pieces on the electrode bonding portions as far as possible are used, a part of the plane electrodes can extend out of the plastic package frame to be conveniently used as external pins, the interval distance between each plane electrode with different polarities is proper, electrical signals do not interfere with each other to be used as standard, after all the plane electrodes are welded, the plastic package material is filled into the plastic package frame, the plastic package is an electronic heat conduction pouring sealant, the electronic heat conduction pouring sealant is provided with epoxy resin heat conduction glue, the pouring sealant of polyurethane material, and the organic silicon heat conduction pouring sealant, when the pouring sealant is actually designed, the pouring sealant can be selected, the welding end covers the metal layers on the electrode bonding portions as far as possible, and the plane electrodes can be well sealed by the drying and the sealing material, and the drying device can be manufactured until the plane electrodes are required to be packaged, and the sealing is well, and the sealing of the plane electrodes can be well sealed.
While the invention has been described with reference to certain preferred embodiments, it will be understood by those skilled in the art that various changes and substitutions of equivalents may be made and equivalents will be apparent to those skilled in the art without departing from the scope of the invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.

Claims (10)

1. An IGBT package structure, comprising:
the packaging structure comprises a plastic packaging frame, wherein a wafer bonding area is arranged in the plastic packaging frame, and the top of the plastic packaging frame is a packaging surface;
an electrode bonding part arranged on the wafer bonding area;
the plane electrode is arranged on the surface of the package;
and the bonding piece is arranged between the wafer bonding area and the planar electrode, and two ends of the bonding piece are respectively and electrically connected with the electrode bonding part and the planar electrode.
2. The IGBT packaging structure of claim 1 wherein the electrode bond comprises an emitter bond, the bond comprises a first bond post, the planar electrode comprises a first planar electrode, and both ends of the first bond post are secured to the emitter bond and the first planar electrode, respectively.
3. The IGBT package of claim 2 wherein the electrode bond further comprises a FWD negative electrode bond, the bond further comprising a second bond post disposed in spaced relation to the first bond post, and both ends of the second bond post are secured to the FWD negative electrode bond and the first planar electrode, respectively.
4. The IGBT packaging structure of claim 3 wherein the first planar electrode comprises opposing first and second sides, the first side extending toward one side edge of the plastic package frame and the second side extending toward the opposing other side edge of the plastic package frame, the first and second bond posts being secured to the first and second sides, respectively.
5. The IGBT packaging structure according to claim 1, wherein the electrode bonding portion further comprises a collector bonding portion, the planar electrode comprises a second planar electrode, the bonding member comprises a third bonding post, and both ends of the third bonding post are fixed to the second planar electrode and the collector bonding portion, respectively.
6. The IGBT packaging structure according to claim 1, wherein the electrode bonding portion further comprises a gate bonding portion, the bonding member comprises a fourth bonding post, the planar electrode comprises a third planar electrode, and both ends of the fourth bonding post are respectively fixed to the gate bonding portion and the third planar electrode.
7. The IGBT packaging structure of claim 1 wherein at least one side of the planar electrode extends to an edge of the plastic package frame.
8. The IGBT package of claim 1 further comprising a copper substrate laid over the wafer bonding region around the electrode bond.
9. A semiconductor device comprising the IGBT packaging structure according to any one of claims 1 to 8.
10. A packaging method for the IGBT packaging structure according to any one of claims 1 to 8, comprising:
welding the electrode bonding part and the bonding piece and the planar electrode;
plastic packaging, and filling plastic packaging materials;
drying and solidifying into gel.
CN202310909143.3A 2023-07-21 2023-07-21 IGBT packaging structure, semiconductor device and packaging method Pending CN116759399A (en)

Priority Applications (1)

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CN202310909143.3A CN116759399A (en) 2023-07-21 2023-07-21 IGBT packaging structure, semiconductor device and packaging method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310909143.3A CN116759399A (en) 2023-07-21 2023-07-21 IGBT packaging structure, semiconductor device and packaging method

Publications (1)

Publication Number Publication Date
CN116759399A true CN116759399A (en) 2023-09-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310909143.3A Pending CN116759399A (en) 2023-07-21 2023-07-21 IGBT packaging structure, semiconductor device and packaging method

Country Status (1)

Country Link
CN (1) CN116759399A (en)

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