CN116504654A - Cu@in core-shell structure micron metal interconnection process - Google Patents
Cu@in core-shell structure micron metal interconnection process Download PDFInfo
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- CN116504654A CN116504654A CN202310045231.3A CN202310045231A CN116504654A CN 116504654 A CN116504654 A CN 116504654A CN 202310045231 A CN202310045231 A CN 202310045231A CN 116504654 A CN116504654 A CN 116504654A
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- 239000011258 core-shell material Substances 0.000 title claims abstract description 57
- 239000002184 metal Substances 0.000 title claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 30
- 230000008569 process Effects 0.000 title claims abstract description 19
- 238000005476 soldering Methods 0.000 claims abstract description 31
- 239000000843 powder Substances 0.000 claims abstract description 25
- 230000004907 flux Effects 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000002156 mixing Methods 0.000 claims abstract description 14
- 238000003825 pressing Methods 0.000 claims abstract description 7
- 238000007639 printing Methods 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 14
- 238000005219 brazing Methods 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 239000000945 filler Substances 0.000 claims description 7
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000003963 antioxidant agent Substances 0.000 claims description 4
- 230000003078 antioxidant effect Effects 0.000 claims description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 239000012190 activator Substances 0.000 claims description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000003112 inhibitor Substances 0.000 claims description 3
- 238000010992 reflux Methods 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- 229940116411 terpineol Drugs 0.000 claims description 3
- 239000004570 mortar (masonry) Substances 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- 239000011859 microparticle Substances 0.000 claims 1
- 239000010949 copper Substances 0.000 abstract description 51
- 239000002245 particle Substances 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 11
- 229910052802 copper Inorganic materials 0.000 abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 8
- 238000004377 microelectronic Methods 0.000 abstract description 6
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000004100 electronic packaging Methods 0.000 abstract description 3
- 238000007772 electroless plating Methods 0.000 abstract description 2
- 239000012792 core layer Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000012153 distilled water Substances 0.000 description 8
- 229910000765 intermetallic Inorganic materials 0.000 description 6
- 238000005303 weighing Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- 239000012279 sodium borohydride Substances 0.000 description 5
- 229910000033 sodium borohydride Inorganic materials 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002471 indium Chemical class 0.000 description 2
- 229910000337 indium(III) sulfate Inorganic materials 0.000 description 2
- XGCKLPDYTQRDTR-UHFFFAOYSA-H indium(iii) sulfate Chemical compound [In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGCKLPDYTQRDTR-UHFFFAOYSA-H 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 description 1
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003760 magnetic stirring Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/08—Auxiliary devices therefor
- B23K3/082—Flux dispensers; Apparatus for applying flux
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemically Coating (AREA)
Abstract
The invention provides a micron metal interconnection process of a core-shell structure, which comprises the steps of obtaining Cu@In core-shell structure powder by using an electroless plating method, mixing the Cu@In core-shell structure powder with flux paste of different types to prepare soldering paste, printing the soldering paste on a substrate by screen printing, standing for 15-60min, slowly pressing a chip from above an interconnection material to cover the surface of the interconnection material, and then placing the whole of the interconnection material in an air environment of 200-250 ℃ for 2-60min to obtain an interconnection device; the shell metal prepared by the method is compact in morphology, uniform and controllable in size, easy to generate atomic diffusion at a lower temperature, and connected with the micron copper particles to form an interconnection system, so that the oxidation resistance and stability of the core layer micron copper particles are improved, and the interconnection temperature and interconnection conditions are greatly reduced; the chip and the substrate can be interconnected under the condition of low temperature and no pressure, the connection packaging of the semiconductor device is completed, and the method can be well applied to the fields of manufacturing of the semiconductor device, microelectronic packaging, power electronic packaging and the like.
Description
Technical Field
The invention belongs to the technical field of electronic packaging micro-interconnection, and particularly relates to a Cu@In core-shell structure micro-metal interconnection process for low-temperature connection and high-temperature service.
Background
In recent years, microelectronic systems have been developed in the directions of high power, high density integration, miniaturization, multifunction and the like, and there have been demands for materials for electronic package interconnection in terms of performance, thermal management and the like, such as realizing high temperature-resistant interconnection (greater than 200 ℃) or multi-level packaging requiring front level interconnection having both low temperature connection and high temperature resistance, and the like, and high interconnection temperature has a great negative influence on the reliability of microelectronic products.
At present, the interconnect materials used in the microelectronic packaging field are mainly alloy solder paste and conductive paste. However, the solder paste has a plurality of problems such as short circuit caused by tin whisker phenomenon, failure of bonding pad caused by the generation of pure intermetallic compound, poor shock resistance and impact resistance, etc. In addition, solder paste has a high reflow temperature, and cannot be used in some products sensitive to high temperature. The curing temperature of the conductive adhesive is generally lower (less than 150 ℃), so that the chip in the interconnection process can be effectively prevented from being influenced by high temperature, but the resin matrix is not high-temperature-resistant, the working temperature interval is easy to be narrow, the conductive and heat-conductive properties are lower, and the chip cracking and falling problems are caused by the thermal fatigue effect generated by the device. Therefore, it is urgent in the electronic industry to find an interconnection material with low cost and reliable quality.
Today, nano-metallic materials are a research hotspot because of their good electrical and thermal conductivity and their ability to sinter at lower temperatures, with nano-copper being a very potential microelectronic package interconnect material. Nano copper has high electric conductivity and thermal conductivity, lower interconnection welding temperature and lower cost, but has the defect of easy oxidation, in particular to conductive copper paste which needs to be sintered at low temperature, and the oxidation of copper can lead to the increase of melting point and lead to sintering failure.
Disclosure of Invention
In order to solve the problems of the prior electronic packaging nano solder paste interconnection material, the invention discloses a Cu@In core-shell structure micrometer metal interconnection process for low-temperature connection and high-temperature service. The micron-sized Cu@In core-shell structure bimetallic powder is selected to inhibit copper oxidation, an In coating on the outer surface can be melted and connected with adjacent Cu cores during low-temperature reflow, and the sufficient Cu atom sources and the higher surface activity of particles enable the In layer to reflow In a short time so as to generate Cu-In intermetallic compounds with higher melting points. The purpose that the obtained welding spot has a higher melting point after low-temperature short-time reflux is realized by a Cu-In phase change mode.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
the invention provides a Cu@In core-shell structure micron metal interconnection process, which comprises the following steps of:
(1) Uniformly mixing 11-120 mu m Cu@In core-shell structure powder in a mortar, adding the powder, soldering paste and soldering flux into a planetary stirrer, and uniformly mixing in the planetary stirrer to prepare Cu@In core-shell structure solder paste;
(2) Attaching the chip on the surface of a Cu@in core-shell structure solder paste interconnection material to obtain a chip and substrate assembly structure;
(3) And soldering the chip and the substrate assembly structure to obtain the interconnection device.
Further, the soldering flux in the step (1) comprises the following components in percentage by mass: 80-90% of solvent, 5-12% of activator, 1-5% of corrosion inhibitor, 1-5% of surfactant, 0.5-1% of film forming agent and 0.1-0.5% of antioxidant.
Further, the soldering flux comprises the following components in percentage by mass: 80-90% of terpineol, 5-12% of citric acid, 1-5% of triethanolamine, 1-5% of op, 0.5-1% of acrylic acid and 0.1-0.5% of hydroquinone.
Further, in the step (1), the soldering paste is one of PSI soldering paste, ALPHA POP707, AMTECH 559, DES soldering paste, NC559ASM, MK 504L; the mass ratio of the flux paste to the Cu@In core-shell structure powder is 3-6:2.
further, in the step (1), the method further comprises the following steps: and refluxing the prepared Cu@in core-shell structure brazing filler metal paste for 2-60min under the pressure of 0-10MPa and the temperature of 250 ℃.
Further, in the step (1), the mass ratio of the soldering flux to the Cu@In core-shell structure solder powder is 1-5:2.
further, the step (2) further comprises the steps of: printing the Cu@in core-shell structure brazing filler metal paste onto a substrate through screen printing, standing for 15-60min, and slowly pressing and covering the chip onto the surface of the Cu@in core-shell structure brazing filler metal paste from above to obtain the chip and substrate assembly structure.
Further, the coating thickness of the Cu@In soldering paste in the step (2) on the substrate is 0.1-0.5mm.
Further, in the step (3), the chip and substrate assembly structure is placed in an environment with the temperature of 200-250 ℃ for 2-60min for brazing, and the interconnection device is obtained.
The invention also provides a core-shell structure micron particle interconnection material prepared by the preparation method.
The beneficial effects of the invention are as follows:
(1) The melting point of In the Cu@In core-shell structure high-temperature solder is only 156.6 ℃, so that connection can be performed at a lower reflow temperature. When the In layer is completely depleted, the service temperature of the generated intermetallic compound is increased. Thus, low temperature connection can be achieved, as high as Wen Fuyi.
(2) Because the contact area between In and Cu In the Cu@In core-shell material is large, compared with the traditional transient liquid phase connection (Transient Liquid Phase, TLP), the method has a higher reaction speed.
(3) In can react with Cu to form intermetallic compounds, which can reduce porosity. The cost of raw materials can be greatly reduced, and the method plays a great advantage in industrialized mass production.
(4) Since the internal Cu nuclei remain after the reaction is completed. Compared with the traditional full intermetallic compound (Intermetallic Compound, IMC) weld, the Cu core can better absorb external stress, so that local stress concentration is relieved, and the shearing resistance of the weld is improved. And because Cu has good electric conduction and heat conduction capacities, the electric conduction and heat conduction capacities of the finally formed welding seam are greatly improved compared with those of the traditional full IMC welding seam.
(5) The micron metal interconnection process of the core-shell structure prepared by the invention improves the oxidation resistance and stability of micron copper, and greatly reduces the interconnection temperature and interconnection conditions on the premise of ensuring the conductivity of the interconnection material. The process can interconnect the chip and the substrate under the condition of low temperature and no pressure, completes the connection and encapsulation of the semiconductor device, and can be well applied to the fields of manufacturing high-end electronic devices, microelectronic encapsulation, power electronic encapsulation and the like. Therefore, the interconnection process of the core-shell micron metal can realize the interconnection of semiconductor devices under the low-temperature condition.
Drawings
FIG. 1 is a schematic diagram of a preparation process of a Cu@in core-shell structure solder paste;
fig. 2 provides a schematic illustration of the overall interconnect device fabrication process.
Detailed Description
The present invention is further illustrated in the following drawings and detailed description, which are to be understood as being merely illustrative of the invention and not limiting the scope of the invention.
Preparation of Cu@In core-shell structure metal powder
The Cu@In core-shell structure metal powder is obtained by using an electroless plating method, and the steps are as follows: preparing an alkaline plating solution containing a complexing agent, indium salt and an antioxidant at room temperature, wherein the complexing agent reacts with the indium salt In the alkaline plating solution to generate complex In3+ so as to prevent direct precipitation of In3+; sodium borohydride is used as a reducing agent to reduce the complex In3+ into an In simple substance, and In is chemically plated on the micron Cu balls; pouring the waste liquid, alternately ultrasonically cleaning the plating powder by using absolute ethyl alcohol and distilled water, cleaning by using absolute ethyl alcohol for the last time, and then air-cooling, drying and sieving to obtain the Cu@In core-shell structure metal powder.
The method specifically comprises the following steps:
step one: sequentially soaking Cu powder with the diameter of 10 mu m in acetone, 15% dilute hydrochloric acid and deionized water to remove organic matters and an oxide layer on the surface of the particles;
step two: weighing 1.51g of indium sulfate powder, placing the indium sulfate powder into a 100ml beaker, adding concentrated sulfuric acid to 4.5g, adding distilled water to 20ml to prepare solution A, and placing the solution A into an ultrasonic cleaner to oscillate until the solution is clear;
step three: weighing 2.0g of disodium ethylenediamine tetraacetate powder, placing in a 100ml beaker, adding distilled water to 20ml to prepare solution B, placing in an ultrasonic cleaner, and oscillating until the solution is clear;
step four: weighing 2.17g of triethanolamine, placing in a 100ml beaker, adding distilled water to 10ml, shaking the beaker to dissolve and clarify;
step five: weighing 4.0g of sodium hydroxide particles, placing the sodium hydroxide particles in a 100ml beaker, adding distilled water to 20ml, placing the sodium hydroxide particles in an ultrasonic cleaning machine, and oscillating until the solution is clear;
step six: weighing 0.04g of hydroquinone particles, placing the hydroquinone particles in a 100ml beaker, adding distilled water to 10ml, and shaking the beaker to dissolve and clarify the hydroquinone particles;
step seven: pouring the solution B into the solution A, uniformly stirring by a glass rod, adding a triethanolamine solution, then dropwise adding a sodium hydroxide solution to a pH value of about 9.0 (35.0 ℃) in a divided and careful way, and uniformly stirring by the glass rod after each dropwise adding;
step eight: weighing 2.0g of sodium borohydride, placing the sodium borohydride in a 100ml beaker, adding distilled water to 20ml, and keeping until the particles are completely dissolved;
step nine: pouring the solution obtained in the step seven into a beaker containing the cleaned copper powder, pouring hydroquinone solution, dripping about 6ml of sodium borohydride solution into a disposable dropper, placing the beaker into a magnetic stirrer for magnetic stirring, and placing the whole beaker into a 80 ℃ heat collection type constant temperature heating magnetic stirrer for stirring at a rotation speed of the magnetic stirrer to be maximum;
step ten: about 6ml of sodium borohydride solution is dripped into the solution every 10min until the solution is used up, after the last dripping is completed for 10min, the beaker is taken out and kept stand for 1min, and the heat collection type constant temperature heating magnetic stirrer is closed;
step eleven: and pouring out the waste liquid, and carrying out ultrasonic cleaning on the obtained plating powder by using absolute ethyl alcohol and distilled water alternately, wherein the final step is that the absolute ethyl alcohol is used for cleaning, then air-cooling and drying are carried out, and after the agglomerated large particles are removed by a 250-mesh sieve, the 18 mu m Cu@In core-shell structure metal powder is obtained, and the thickness of an In plating layer is 8 mu m.
Example 1:
(1) The obtained Cu@In core-shell structure metal powder and flux paste are mixed according to the following ratio of 1:3, mixing the components according to the mass ratio, and mixing the components with soldering flux according to the mass ratio of 2:5, mixing the components of the soldering flux in a mass ratio of 85% of solvent/terpineol, 5% of activator/citric acid, 3% of corrosion inhibitor/triethanolamine, 10% of surfactant/op, 1% of film forming agent/acrylic acid and 0.1% of antioxidant/hydroquinone; the used paste flux is PSI paste flux;
(2) After the Cu@In core-shell structure solder paste is prepared, the specific preparation process of the whole interconnection device is as follows: printing the Cu@in core-shell structure soldering paste onto a substrate through screen printing, standing for 10min, and slowly pressing a chip from the upper part of the Cu@in core-shell structure soldering paste to cover the surface of the chip;
(3) And then the whole is placed in an air environment with the temperature of 200 ℃ for 20min to obtain the interconnection device.
Example 2:
otherwise as in example 1, this example differs from example 1 in that the cu@in core-shell structured metal powder and the flux paste are mixed according to a ratio of 2:3, mixing the components according to the mass ratio, and mixing the components with soldering flux according to the mass ratio of 2:1, and using ALPHA POP707 paste.
The using method comprises the following steps: printing the Cu@in core-shell structure soldering paste onto a substrate through screen printing, standing for 30min, slowly pressing the chip from the upper part of the Cu@in core-shell structure soldering paste to cover the surface of the chip, and then placing the whole chip in 220 ℃ and sintering and preserving heat for 30min in an air environment to obtain the sintered interconnection device.
Example 3:
otherwise as in example 1, this example differs from example 1 in that the cu@in core-shell structured metal powder and the flux paste are mixed according to a ratio of 1:2, mixing the components according to the mass ratio, and mixing the components with soldering flux according to the mass ratio of 1:1, using AMTECH 559.
The using method comprises the following steps: printing the Cu@in core-shell structure soldering paste onto a substrate through screen printing, standing for 30min, slowly pressing the chip from the upper part of the Cu@in core-shell structure soldering paste to cover the surface of the chip, and then heating and preserving the temperature of the whole chip in an air environment of 230 ℃ for 30min to obtain the interconnection device.
Example 4:
otherwise as in example 1, this example differs from example 1 in that: the Cu@In core-shell structure metal powder and flux paste are mixed according to the following ratio of 2:3, mixing the components according to the mass ratio, and mixing the components with soldering flux according to the mass ratio of 1:1 mass ratio MK504L flux paste was used in combination.
The using method comprises the following steps: printing the Cu@in core-shell structure soldering paste onto a substrate through screen printing, standing for 30min, slowly pressing the chip from the upper part of the Cu@in core-shell structure soldering paste to cover the surface of the chip, and then placing the whole chip in an air environment at 240 ℃ for heat preservation for 40min to obtain the sintered interconnection device.
It should be noted that the foregoing merely illustrates the technical idea of the present invention and is not intended to limit the scope of the present invention, and that a person skilled in the art may make several improvements and modifications without departing from the principles of the present invention, which fall within the scope of the claims of the present invention.
Claims (10)
1. The Cu@in core-shell structure micron metal interconnection process is characterized by comprising the following steps of:
(1) Uniformly mixing 11-120 mu m Cu@In core-shell structure powder in a mortar, adding the powder, soldering paste and soldering flux into a planetary stirrer, and uniformly mixing in the planetary stirrer to prepare Cu@In core-shell structure solder paste;
(2) Attaching the chip on the surface of the Cu@In core-shell structure brazing filler metal paste to obtain a chip and substrate assembly structure;
(3) And soldering the chip and the substrate assembly structure to obtain the interconnection device.
2. The Cu@in core-shell structured micron metal interconnection process according to claim 1, wherein the soldering flux in the step (1) comprises the following components in percentage by mass: 80-90% of solvent, 5-12% of activator, 1-5% of corrosion inhibitor, 1-5% of surfactant, 0.5-1% of film forming agent and 0.1-0.5% of antioxidant.
3. The Cu@in core-shell structured micron metal interconnection process according to claim 2, wherein the soldering flux comprises the following components in mass percent: 80-90% of terpineol, 5-12% of citric acid, 1-5% of triethanolamine, 1-5% of op, 0.5-1% of acrylic acid and 0.1-0.5% of hydroquinone.
4. The process of claim 1, wherein in the step (1), the paste is one of PSI paste, ALPHA POP707, AMTECH 559, DES paste, NC559ASM, MK 504L; the mass ratio of the flux paste to the Cu@In core-shell structure solder powder is 3-6:2.
5. the cu@in core-shell structured micron metal interconnect process of claim 1 wherein in step (1) further comprises the steps of: and refluxing the prepared Cu@in core-shell structure brazing filler metal paste for 2-60min under the pressure of 0-10MPa and the temperature of 250 ℃.
6. The Cu@in core-shell structure micron metal interconnection process according to claim 1 is characterized in that in the step (1), the mass ratio of the soldering flux to the Cu@in core-shell structure solder powder is 1-5:2.
7. the cu@in core-shell structured micron metal interconnect process of claim 1 wherein step (2) further comprises the steps of: printing the Cu@in core-shell structure brazing filler metal paste onto a substrate through screen printing, standing for 15-60min, and slowly pressing and covering the chip onto the surface of the Cu@in core-shell structure brazing filler metal paste from above to obtain the chip and substrate assembly structure.
8. The process for preparing the Cu@in core-shell structured micron metal interconnection according to claim 1, wherein in the step (2), the coating thickness of the Cu@in solder paste on the substrate is 0.1-0.5mm.
9. The Cu@in core-shell structure micron metal interconnection process according to claim 1 is characterized in that in the step (3), a chip and a substrate assembly structure are placed in an environment of 200-250 ℃ for heat preservation for 2-60min for brazing, and an interconnection device is obtained.
10. A core-shell structured microparticle interconnect prepared by the preparation method of any one of claims 1-9.
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