CN116387787B - Three-dimensional structured miniature Wilkinson power divider - Google Patents
Three-dimensional structured miniature Wilkinson power divider Download PDFInfo
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- CN116387787B CN116387787B CN202310490174.XA CN202310490174A CN116387787B CN 116387787 B CN116387787 B CN 116387787B CN 202310490174 A CN202310490174 A CN 202310490174A CN 116387787 B CN116387787 B CN 116387787B
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- 239000000919 ceramic Substances 0.000 claims description 35
- 238000002955 isolation Methods 0.000 claims description 28
- 239000011229 interlayer Substances 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a miniaturized wilkinson power divider with a three-dimensional structure, which comprises a three-dimensional input assembly and a three-dimensional output assembly, wherein the three-dimensional input assembly is connected with the three-dimensional output assembly through an impedance transformation microstrip line, the three-dimensional input assembly is used for separating an input signal into two paths and transmitting the two paths of signals to the three-dimensional output assembly, and the three-dimensional output assembly is used for respectively outputting the two paths of input signals. The power divider has the advantages of simple structure, small volume, low cost and the like. The power divider ensures good radio frequency performance while realizing a three-dimensional power divider circuit structure, and solves the problem of larger occupied area of the traditional plane power divider in a microwave micro system; a vertical interconnection coaxial-like structure is introduced to realize the transition of the strip-microstrip line. Meanwhile, the power divider is simple in structure, easy to process and small in size, meanwhile, the difficulty in assembly is reduced, and the miniaturized design requirement of the microwave three-dimensional circuit is met.
Description
Technical Field
The invention relates to the technical field of radio frequency packaging, in particular to a miniaturized wilkinson power divider with a three-dimensional structure.
Background
The power divider is an important passive device in the microwave circuit system, can divide the power of an input port into two or more ports, and can design two unequal power dividers and a multi-path power divider according to specific circuit requirements besides the two equal power dividers which are most commonly used. The common three-port T-shaped section has the defects of incomplete port matching, poor isolation of two output ports and the like, and the Wilkinson power divider can achieve complete port matching and has better isolation between the output ports. The integration of microwave circuits has also promoted the development of various power splitters based on planar transmission lines, and in recent years, the radio frequency microsystems have been gradually miniaturized, and the conventional planar package cannot meet the size requirements thereof, so that the three-dimensional package form has been increasingly paid attention to. The three-dimensional packaging form enables the circuit with the planar structure to be three-dimensional, and the space utilization rate is improved. The traditional power divider based on a planar transmission line has larger occupied area and cannot meet the miniaturization requirement of some radio frequency microsystems.
Disclosure of Invention
The invention aims to solve the technical problem of providing a miniaturized wilkinson power divider with a three-dimensional structure, which has good radio frequency performance, simple structure and small volume.
In order to solve the technical problems, the invention adopts the following technical scheme: a miniaturized wilkinson power divider with a three-dimensional structure is characterized in that: the three-dimensional input assembly is used for separating an input signal into two paths and transmitting the two paths to the three-dimensional output assembly, and the three-dimensional output assembly is used for respectively outputting the two paths of input signals.
The further technical proposal is that: the three-dimensional input assembly comprises a plurality of first ceramic layers, a first interlayer metal layer is formed between the first ceramic layers, an input strip line is formed between the two first ceramic layers, one end of the input strip line is a signal input end of a power divider, the other end of the input strip line extends to two sides of the power divider respectively to form a first transition strip line and a second transition strip line, the other end of the first transition strip line is connected with the lower end of a first coaxial through hole, the other end of the second transition strip line is connected with the lower end of a second coaxial through hole, the upper end of the coaxial through hole extends to the first ceramic layer of the uppermost layer and is connected with one end of the first transition microstrip line and one end of the second transition microstrip line respectively, the other end of the first transition microstrip line is connected with one end of a first isolation resistor, one end of the first upper impedance conversion line is connected with the first transition strip line, the other end of the first upper impedance conversion line extends to the other end of the microstrip line, and the microstrip line extends to the other end of the microstrip assembly, and the microstrip assembly is connected with the microstrip assembly, and the microstrip assembly is in three-dimensional signal input assembly.
The further technical proposal is that: the three-dimensional output assembly comprises a plurality of second ceramic layers, a second interlayer metal layer is formed between the second ceramic layers, a third transition microstrip line and a fourth transition microstrip line are formed on the upper surface of the second ceramic layer positioned at the uppermost layer, the first upper impedance conversion microstrip line is connected with the middle part of the third transition microstrip line, the second upper impedance conversion microstrip line is connected with the middle part of the fourth transition microstrip line, the third transition microstrip line is connected with the fourth transition microstrip line through a second isolation resistor, the upper end of a third coaxial through hole is connected with the outer end part of the third transition microstrip line, the lower end of the third coaxial through hole downwards extends to the inner end part of a first output strip line between the second ceramic layers, and the other end of the first output strip line extends to the outer side of the three-dimensional output assembly to form a signal output end of the power divider; the upper end of the fourth coaxial through hole is connected with the outer side end part of the fourth transition microstrip line, the lower end of the fourth coaxial through hole extends downwards to be connected with the inner side end part of a second output strip line between the second ceramic layers, the other end of the second output strip line extends to the outer side of the three-dimensional output assembly to form the other signal output end of the power divider, and the third coaxial through hole, the fourth coaxial through hole, the first output strip line and the second output strip line are not in contact with the second interlayer metal layer.
The beneficial effects of adopting above-mentioned technical scheme to produce lie in: the input port is a section of strip line, signals are equally transmitted to the surface microstrip line through two symmetrical coaxial-like vertical interconnection structures, the metallized through holes are used as inner conductors of the coaxial-like structures, and surrounding metallized grounding holes form outer conductors of the coaxial-like structures, so that the coaxial-like structures of vertical interconnection are formed. Two isolation resistors are arranged between two sections of microstrip lines on the surface to provide isolation between two output ports, two output signals are respectively transferred to the strip line through the vertical interconnection coaxial-like structure, a plurality of bonding pads are arranged in the conductor metallization through holes in the coaxial-like structure of the two output ports, and the impedance matching of the vertical transition structure is also participated in while the processing is facilitated.
Compared with the traditional plane structure power divider, the three-dimensional power divider circuit structure is realized, good radio frequency performance is ensured, and the problem that the traditional plane power divider occupies a larger area in a microwave micro system is solved; a vertical interconnection coaxial-like structure is introduced to realize the transition of the strip-microstrip line. Meanwhile, the power divider is simple in structure, easy to process and small in size, meanwhile, the difficulty in assembly is reduced, and the miniaturized design requirement of the microwave three-dimensional circuit is met.
Drawings
The invention will be described in further detail with reference to the drawings and the detailed description.
FIG. 1 is a schematic perspective view of a power divider according to an embodiment of the present invention;
FIG. 2 is a schematic perspective view of a power divider according to an embodiment of the present invention;
FIG. 3 is a schematic perspective view of a power divider according to an embodiment of the present invention;
FIG. 4 is a schematic top view of a power divider according to an embodiment of the present invention;
FIG. 5 is a diagram showing simulation results of a miniaturized strip-type power divider structure in this embodiment;
Wherein: 1. a first ceramic layer; 2. a first interlayer metal layer; 3. an input strip line; 4. a first transition stripline; 5. a second transition strip line; 6. a first type of coaxial through-hole; 7. a second type of coaxial through hole; 8. a first transition microstrip line; 9. a second transition microstrip line; 10. a first isolation resistor; 11. a first upper layer impedance transformation microstrip line; 12. a second upper layer impedance transformation microstrip line; 13. isolating the resistive pads; 14. a first-class coaxial pad; 15. a lower first type of coaxial pad; 16. isolating the metallized through holes; 17. a second ceramic layer; 18. a second interlayer metal layer; 19. a third transition microstrip line; 20. a fourth transition microstrip line; 21. a second isolation resistor; 22. a third type of coaxial through-hole; 23. a first output stripline; 24. a fourth type of coaxial through hole; 25. a second output stripline; 26. a lower second-type coaxial pad; 27. a second-type coaxial bonding pad is arranged on the upper surface of the first-type coaxial bonding pad; 28. impedance matching pads.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
As shown in fig. 1-4, the embodiment of the invention discloses a miniaturized wilkinson power divider with a three-dimensional structure, which is generally applicable to an X-band and a Ku-band. The power divider comprises a three-dimensional input assembly and a three-dimensional output assembly, wherein the three-dimensional input assembly is connected with the three-dimensional output assembly through an impedance transformation microstrip line, the three-dimensional input assembly is used for separating an input signal into two paths and transmitting the two paths of the input signal to the three-dimensional output assembly, and the three-dimensional output assembly is used for respectively outputting the two paths of input signals.
Further, the three-dimensional input assembly comprises a plurality of first ceramic layers 1, and the specific number of the first ceramic layers 1 can be set according to the performance, the size and the like of the device. A first interlayer metal layer 2 is formed between the first ceramic layers 1, and the first interlayer metal layer 2 mainly plays roles of shielding and grounding. An input strip line 3 is formed between two first ceramic layers 1, one end of the input strip line 3 is a signal input end of a power divider, and radio frequency signals are input to the power divider through the input strip line 3 and then processed through a subsequent structure.
The other ends of the input strip line 3 extend to two sides (left and right sides of fig. 1) of the power divider respectively to form a first transition strip line 4 and a second transition strip line 5, and as can be seen from fig. 3, the width of the input strip line 3 is larger than the widths of the first transition strip line 4 and the second transition strip line 5 in the application, and as can be seen from fig. 3, the inner end part of the input strip line 3 extends to the middle part of the three-dimensional input assembly, and then extends to the left and right sides of the power divider.
As shown in fig. 3, the other end of the first transition strip line 4 is connected to the lower end of the first type coaxial via 6, the other end of the second transition strip line 5 is connected to the lower end of the second type coaxial via 7, and the lower ends of the first type coaxial via 6 and the second type coaxial via 7 extend upward from the plane where the input strip line 3 is located to the upper surface of the power divider. Further, the upper ends of the coaxial-like through holes (the first coaxial through hole 6 and the second coaxial through hole 7) extend to the ceramic layer of the uppermost layer and are respectively connected with one end of the first transition microstrip line 8 and one end of the second transition microstrip line 9 on the upper surface of the ceramic layer of the uppermost layer.
Further, as shown in fig. 3, the outer ends of the first transition strip line 4 and the second transition strip line 5 are respectively formed with an upper first type coaxial pad 14, and the outer ends of the first transition microstrip line 8 and the second transition microstrip line 9 are respectively formed with a lower first type coaxial pad 15; the lower ends of the first type coaxial through holes 6 and the lower ends of the second type coaxial through holes 7 are respectively connected with two lower first type coaxial pads 15, and the upper ends of the first type coaxial through holes 6 and the upper ends of the second type coaxial through holes 7 are respectively connected with two upper first type coaxial pads 14.
Further, the other end of the first transition microstrip line 8 is connected with one end of the first isolation resistor 10, the other end of the second transition microstrip line 9 is connected with the other end of the first isolation resistor 10, isolation resistor pads 13 are respectively formed at the inner end of the first transition microstrip line 8 and the inner end of the second transition microstrip line 9, and two ends of the isolation resistor 10 are respectively welded on the two isolation resistor pads 13, and the stability of connection can be effectively improved by arranging the pads at corresponding positions.
Further, as shown in fig. 1 and 3, one end of the first upper impedance transformation microstrip line 11 is connected to the first transition microstrip line 8, the other end of the first upper impedance transformation microstrip line 11 extends toward the direction of the three-dimensional output component to form a signal output end of the three-dimensional input component, one end of the second upper impedance transformation microstrip line 12 is connected to the second transition microstrip line 9, the other end of the second upper impedance transformation microstrip line 12 extends toward the direction of the three-dimensional output component to form another signal output end of the three-dimensional input component, and the coaxial-like through hole, the input strip line 3, the first transition strip line 4 and the second transition strip line 5 are not in contact with the first interlayer metal layer 2, so as to prevent the effective transmission of signals from being affected.
Further, as shown in fig. 1 to fig. 4, the three-dimensional output assembly includes a plurality of second ceramic layers 17, a second interlayer metal layer 18 is formed between the second ceramic layers 17, the manufacturing materials of the first interlayer metal layer 2 and the second interlayer metal layer 18 may be the same, and the manufacturing materials of the first ceramic layer 1 and the second ceramic layer 17 may also be the same; a third transition microstrip line 19 and a fourth transition microstrip line 20 are formed on the upper surface of the second ceramic layer 17 located at the uppermost layer, the first upper impedance transformation microstrip line 11 is connected with the middle part of the third transition microstrip line 19, and the second upper impedance transformation microstrip line 12 is connected with the middle part of the fourth transition microstrip line 20. The third transition microstrip line 19 is connected with the fourth transition microstrip line 20 through a second isolation resistor 21, the upper end of a third coaxial through hole 22 is connected with the outer end of the third transition microstrip line 19, and the lower end of the third coaxial through hole 22 extends downwards to be connected with the inner end of a first output strip line 23 between the second ceramic layers 17.
The other end of the first output strip line 23 extends to the outer side of the three-dimensional output assembly to form a signal output end of the power divider; the upper end of the fourth type of coaxial through hole 24 is connected with the outer end of the fourth transition microstrip line 20, the lower end of the fourth type of coaxial through hole 24 extends downwards to be connected with the inner end of a second output strip line 25 between the second ceramic layers 17, the other end of the second output strip line 25 extends towards the outer side of the three-dimensional output assembly to form the other signal output end of the power divider, and the third type of coaxial through hole 22, the fourth type of coaxial through hole 24, the first output strip line 23 and the second output strip line 25 are not in contact with the second interlayer metal layer 18, so that effective transmission of signals is prevented from being affected.
Further, the inner end of the third transition microstrip line 19 and the inner end of the fourth transition microstrip line 20 are respectively formed with chip resistor pads 13, two ends of the isolation resistor are respectively welded on the two corresponding chip resistor pads 13, and the stability of connection can be effectively improved by arranging the pads at the corresponding positions.
Further, as shown in fig. 1 and 3, the first transition strip line 4 and the second transition strip line 5 are perpendicular to the input strip line 3, the first upper impedance transformation microstrip line 11 is perpendicular to the first transition microstrip line 8 and the third transition microstrip line 19, and the second upper impedance transformation microstrip line 12 is perpendicular to the second transition microstrip line 9 and the fourth transition microstrip line 20, respectively, so that stable signal transmission is facilitated by setting the strip lines and the microstrip lines to a vertical structure.
Further, as shown in fig. 1 to fig. 4, in the three-dimensional input assembly, the outer ends of the first transition strip line 4 and the second transition strip line 5 are respectively formed with a lower first type coaxial pad 15, the outer ends of the first transition microstrip line 8 and the second transition microstrip line 9 are respectively formed with an upper first type coaxial pad 14, the lower ends of the first type coaxial through holes 6 and the lower ends of the second type coaxial through holes 7 are respectively connected with two lower first type coaxial pads 15, and the upper ends of the first type coaxial through holes 6 and the upper ends of the second type coaxial through holes 7 are respectively connected with two upper first type coaxial pads 14;
Correspondingly, in the three-dimensional output assembly, the inner side ends of the first output strip line 23 and the second output strip line 25 are respectively formed with a lower second type coaxial bonding pad 26, the outer side ends of the third transition microstrip line 19 and the fourth transition microstrip line 20 are respectively formed with an upper second type coaxial bonding pad 27, the lower ends of the third type coaxial through holes 22 and the lower ends of the fourth type coaxial through holes are respectively connected with two lower second type coaxial bonding pads 26, and the upper ends of the third type coaxial through holes 22 and the upper ends of the fourth type coaxial through holes 24 are respectively connected with two upper second type coaxial bonding pads 27.
As shown in fig. 3, the first interlayer metal layer 2 includes two first annular portions having openings, the two first annular portions are connected by a first connection portion, and the first annular portions are disposed around the first type of coaxial through holes and the second type of coaxial through holes; the second interlayer metal layer 18 includes two second annular portions having openings, the two second annular portions are connected by a second connecting portion, and the second annular portions are disposed around the third coaxial through holes and the fourth coaxial through holes.
Further, the power divider further comprises two groups of vertically arranged isolation metallization through holes 16, wherein one group of isolation metallization through holes 16 connects the first interlayer metal layers 2 on the three-dimensional input component together, and the group of isolation metallization through holes 16 are positioned around the strip line and the coaxial-like through holes of the three-dimensional input component; another set of the isolated metallization vias 16 connects the second inter-layer metal layers 18 together on the three-dimensional output component, and the set of isolated metallization vias 16 is located around the striplines and the coaxial-like vias of the three-dimensional output component. The third type of coaxial through holes 22 and the fourth type of coaxial through holes 24 are provided with a plurality of impedance matching pads 28, and the impedance matching pads are positioned between the second ceramic layers, so that the processing is convenient, and meanwhile, the impedance matching of the vertical transition structure is also participated.
Compared with the traditional Wilkinson power divider with a planar structure, the Wilkinson power divider with a three-dimensional structure has the advantages that a similar coaxial transition structure for vertical interconnection is added, the utilization rate of space is improved, and the area is saved. Fig. 5 shows the S-parameter simulation result of the miniaturized wilkinson power divider with the three-dimensional structure. As can be seen from simulation results, the miniaturized Wilkinson power divider with the three-dimensional structure has good return loss, low insertion loss, good isolation between two output ports and good radio frequency performance in a frequency band.
In addition, the three ports of the invention have characteristic impedance of 30 ohms, but can be modified according to design requirements, and the invention can be applied to a transmission line with 50 ohms.
Compared with the traditional plane structure power divider, the three-dimensional power divider circuit structure is realized, good radio frequency performance is ensured, and the problem that the traditional plane power divider occupies a larger area in a microwave micro system is solved; a vertical interconnection coaxial-like structure is introduced to realize the transition of the strip-microstrip line. Meanwhile, the power divider is simple in structure, easy to process and small in size, meanwhile, the difficulty in assembly is reduced, and the miniaturized design requirement of the microwave three-dimensional circuit is met.
Claims (8)
1. A miniaturized wilkinson power divider with a three-dimensional structure is characterized in that: the three-dimensional input assembly is used for separating an input signal into two paths of signals and transmitting the two paths of signals to the three-dimensional output assembly, and the three-dimensional output assembly is used for respectively outputting the two paths of input signals;
The three-dimensional input assembly comprises a plurality of first ceramic layers (1), a first interlayer metal layer (2) is formed between the first ceramic layers (1), an input strip line (3) is formed between the two first ceramic layers (1), one end of the input strip line (3) is a signal input end of the power divider, the other end of the input strip line (3) extends towards two sides of the power divider to form a first transition strip line (4) and a second transition strip line (5) respectively, the other end of the first transition strip line (4) is connected with the lower end of a first type coaxial through hole (6), the other end of the second transition strip line (5) is connected with the lower end of a second type coaxial through hole (7), the upper ends of the first type coaxial through hole (6) and the second type coaxial through hole (7) extend to the first ceramic layer (1) of the uppermost layer and are respectively connected with one end of a first transition line (8) and one end of a second transition line (9), the other end of the first transition line (8) is connected with the other end of a microstrip (10), the other end of the first transition line (8) is connected with the microstrip (10) of the microstrip, the other end of the microstrip is connected with the microstrip (10), the other end of the first upper impedance transformation microstrip line (11) extends towards the direction of the three-dimensional output assembly to form one signal output end of the three-dimensional input assembly, one end of the second upper impedance transformation microstrip line (12) is connected with the second transition microstrip line (9), the other end of the second upper impedance transformation microstrip line (12) extends towards the direction of the three-dimensional output assembly to form the other signal output end of the three-dimensional input assembly, and the first coaxial through hole (6) and the second coaxial through hole (7), the input strip line (3), the first transition strip line (4) and the second transition strip line (5) are not in contact with the first interlayer metal layer (2);
The three-dimensional output assembly comprises a plurality of second ceramic layers (17), a second interlayer metal layer (18) is formed between the second ceramic layers (17), a third transition microstrip line (19) and a fourth transition microstrip line (20) are formed on the upper surface of the second ceramic layer (17) positioned at the uppermost layer, the first upper impedance transformation microstrip line (11) is connected with the middle part of the third transition microstrip line (19), the second upper impedance transformation microstrip line (12) is connected with the middle part of the fourth transition microstrip line (20), the third transition microstrip line (19) is connected with the fourth transition microstrip line (20) through a second isolation resistor (21), the upper end of a third coaxial through hole (22) is connected with the outer side end part of the third transition microstrip line (19), the lower end of the third coaxial through hole (22) extends downwards to be connected with the inner side end part of a first output line (23) between the two layers of the second ceramic layers (17), and the other end part of the first output line (23) extends to the outer side of the three-dimensional output assembly; the upper end of the fourth coaxial through hole (24) is connected with the outer side end part of the fourth transition microstrip line (20), the lower end of the fourth coaxial through hole (24) extends downwards to be connected with the inner side end part of a second output strip line (25) between the two layers of second ceramic layers (17), the other end of the second output strip line (25) extends to the outer side of the three-dimensional output assembly to form the other signal output end of the power divider, and the third coaxial through hole (22), the fourth coaxial through hole (24), the first output strip line (23) and the second output strip line (25) are not in contact with the second interlayer metal layer (18).
2. A miniaturized wilkinson power divider of three-dimensional structure according to claim 1, characterized in that: the isolation resistor pads (13) are respectively formed at the inner side end part of the first transition microstrip line (8), the inner side end part of the second transition microstrip line (9), the inner side end part of the third transition microstrip line (19) and the inner side end part of the fourth transition microstrip line (20), and two ends of the isolation resistor are respectively welded on the two corresponding isolation resistor pads (13).
3. A miniaturized wilkinson power divider of three-dimensional structure according to claim 1, characterized in that: the first transition strip line (4) and the second transition strip line (5) are respectively perpendicular to the input strip line (3), the first upper impedance transformation microstrip line (11) is respectively perpendicular to the first transition microstrip line (8) and the third transition microstrip line (19), and the second upper impedance transformation microstrip line (12) is respectively perpendicular to the second transition microstrip line (9) and the fourth transition microstrip line (20).
4. A miniaturized wilkinson power divider of three-dimensional structure according to claim 1, characterized in that: the outer side ends of the first transition strip line (4) and the second transition strip line (5) are respectively provided with a first lower type coaxial bonding pad (15), the outer side ends of the first transition microstrip line (8) and the second transition microstrip line (9) are respectively provided with a first upper type coaxial bonding pad (14), the lower ends of the first type coaxial through holes (6) and the lower ends of the second type coaxial through holes (7) are respectively connected with the two first lower type coaxial bonding pads (15), and the upper ends of the first type coaxial through holes (6) and the upper ends of the second type coaxial through holes (7) are respectively connected with the two first upper type coaxial bonding pads (14);
The inner side end parts of the first output strip line (23) and the second output strip line (25) are respectively provided with a lower second type coaxial bonding pad (26), the outer side end parts of the third transition microstrip line (19) and the fourth transition microstrip line (20) are respectively provided with an upper second type coaxial bonding pad (27), the lower ends of the third type coaxial through holes (22) and the lower ends of the fourth type coaxial through holes are respectively connected with the two lower second type coaxial bonding pads (26), and the upper ends of the third type coaxial through holes (22) and the upper ends of the fourth type coaxial through holes (24) are respectively connected with the two upper second type coaxial bonding pads (27).
5. A miniaturized wilkinson power divider of three-dimensional structure according to claim 1, characterized in that: the first interlayer metal layer (2) comprises two first annular parts with openings, the two first annular parts are connected through a first connecting part, and the first annular parts are arranged around the first type coaxial through holes and the second type coaxial through holes; the second interlayer metal layer (18) comprises two second annular parts with openings, the two second annular parts are connected through a second connecting part, and the second annular parts are arranged around the third coaxial through holes and the fourth coaxial through holes.
6. A miniaturized wilkinson power divider of three-dimensional structure according to claim 1, characterized in that: the power divider further comprises two groups of vertically arranged isolation metallization through holes (16), wherein one group of isolation metallization through holes (16) connects the first interlayer metal layers (2) on the three-dimensional input assembly together, and the group of isolation metallization through holes (16) are positioned around the first transition strip line (4) and the second transition strip line (5) and the first type coaxial through holes (6) and the second type coaxial through holes (7) of the three-dimensional input assembly; another set of isolation metallization vias (16) connects the second interlayer metal layers (18) together on the three-dimensional output assembly, and the set of isolation metallization vias (16) is located around the first (23) and second (25) output striplines and the third (22) and fourth (24) types of coaxial vias of the three-dimensional output assembly.
7. A miniaturized wilkinson power divider of three-dimensional structure according to claim 1, characterized in that: and a plurality of impedance matching pads (28) are formed on the third coaxial through holes (22) and the fourth coaxial through holes (24), and the impedance matching pads (28) are positioned between the two second ceramic layers (17).
8. A miniaturized wilkinson power divider of three-dimensional structure according to claim 1, characterized in that: the power divider is suitable for the X wave band and the Ku wave band.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310490174.XA CN116387787B (en) | 2023-05-04 | 2023-05-04 | Three-dimensional structured miniature Wilkinson power divider |
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| CN202310490174.XA CN116387787B (en) | 2023-05-04 | 2023-05-04 | Three-dimensional structured miniature Wilkinson power divider |
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| CN116387787A CN116387787A (en) | 2023-07-04 |
| CN116387787B true CN116387787B (en) | 2024-05-17 |
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| CN202310490174.XA Active CN116387787B (en) | 2023-05-04 | 2023-05-04 | Three-dimensional structured miniature Wilkinson power divider |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103022616A (en) * | 2012-12-14 | 2013-04-03 | 四川九洲电器集团有限责任公司 | Double-frequency four-way power divider based on low temperature co-fired ceramic technology |
| CN203760617U (en) * | 2014-03-24 | 2014-08-06 | 上海航天电子通讯设备研究所 | X wave band planar back-fed type isolating strip line power divider |
| CN110890624A (en) * | 2019-12-06 | 2020-03-17 | 电子科技大学 | Broadband compact shaped array antenna |
| CN212783744U (en) * | 2020-07-27 | 2021-03-23 | 中国电子科技集团公司第三十八研究所 | Miniaturized broadband three-dimensional power divider with impedance transformation function |
| CN115395198A (en) * | 2022-08-26 | 2022-11-25 | 中国电子科技集团公司第十研究所 | Multilayer ultra-wideband power divider and power dividing device comprising same |
| WO2023280083A1 (en) * | 2021-07-05 | 2023-01-12 | 中兴通讯股份有限公司 | Inner-layer strip-shaped power divider circuit and power divider system |
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2023
- 2023-05-04 CN CN202310490174.XA patent/CN116387787B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022616A (en) * | 2012-12-14 | 2013-04-03 | 四川九洲电器集团有限责任公司 | Double-frequency four-way power divider based on low temperature co-fired ceramic technology |
| CN203760617U (en) * | 2014-03-24 | 2014-08-06 | 上海航天电子通讯设备研究所 | X wave band planar back-fed type isolating strip line power divider |
| CN110890624A (en) * | 2019-12-06 | 2020-03-17 | 电子科技大学 | Broadband compact shaped array antenna |
| CN212783744U (en) * | 2020-07-27 | 2021-03-23 | 中国电子科技集团公司第三十八研究所 | Miniaturized broadband three-dimensional power divider with impedance transformation function |
| WO2023280083A1 (en) * | 2021-07-05 | 2023-01-12 | 中兴通讯股份有限公司 | Inner-layer strip-shaped power divider circuit and power divider system |
| CN115395198A (en) * | 2022-08-26 | 2022-11-25 | 中国电子科技集团公司第十研究所 | Multilayer ultra-wideband power divider and power dividing device comprising same |
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| CN116387787A (en) | 2023-07-04 |
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