CN116317864A - Shutter power generation integrated device and preparation method thereof - Google Patents
Shutter power generation integrated device and preparation method thereof Download PDFInfo
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- CN116317864A CN116317864A CN202310092164.0A CN202310092164A CN116317864A CN 116317864 A CN116317864 A CN 116317864A CN 202310092164 A CN202310092164 A CN 202310092164A CN 116317864 A CN116317864 A CN 116317864A
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
- H10K39/12—Electrical configurations of PV cells, e.g. series connections or parallel connections
-
- E—FIXED CONSTRUCTIONS
- E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
- E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
- E06B7/00—Special arrangements or measures in connection with doors or windows
- E06B7/02—Special arrangements or measures in connection with doors or windows for providing ventilation, e.g. through double windows; Arrangement of ventilation roses
- E06B7/08—Louvre doors, windows or grilles
- E06B7/084—Louvre doors, windows or grilles with rotatable lamellae
- E06B7/086—Louvre doors, windows or grilles with rotatable lamellae interconnected for concurrent movement
-
- E—FIXED CONSTRUCTIONS
- E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
- E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
- E06B7/00—Special arrangements or measures in connection with doors or windows
- E06B7/28—Other arrangements on doors or windows, e.g. door-plates, windows adapted to carry plants, hooks for window cleaners
-
- E—FIXED CONSTRUCTIONS
- E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
- E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
- E06B9/00—Screening or protective devices for wall or similar openings, with or without operating or securing mechanisms; Closures of similar construction
- E06B9/02—Shutters, movable grilles, or other safety closing devices, e.g. against burglary
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S20/00—Supporting structures for PV modules
- H02S20/30—Supporting structures being movable or adjustable, e.g. for angle adjustment
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S30/00—Structural details of PV modules other than those related to light conversion
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
- H10K39/18—Interconnections, e.g. terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Structural Engineering (AREA)
- Civil Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Architecture (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to the technical field of photovoltaic cells, and provides a shutter power generation integrated device and a manufacturing method thereof. The shutter power generation integrated device comprises a plurality of perovskite solar cell units, a plurality of first current collection belts, a first partition conductive pull rope and a second partition conductive pull rope, wherein the first current collection belts are electrically connected with bottom electrodes of the perovskite solar cell units in one-to-one correspondence; the plurality of second current collecting strips are electrically connected with the top electrodes of the plurality of perovskite solar cell units in a one-to-one correspondence. The first partitioned conductive pull rope and the second partitioned conductive pull rope are respectively provided with a conductive section and a non-conductive section, and the conductive sections of the first partitioned conductive pull rope are electrically connected with the first ends of the plurality of first current collecting belts. The shutter power generation integrated device provided by the invention can effectively provide energy output, provides a comfortable environment, reduces heating and air conditioning costs, improves the overall power generation capacity, realizes the expansion of building light energy utilization, and promotes zero carbon emission of buildings.
Description
Technical Field
The invention relates to the technical field of photovoltaic cells, in particular to a shutter power generation integrated device and a manufacturing method thereof.
Background
The photovoltaic building integrated market belongs to the distributed photovoltaic market segment, and the perovskite light flexible and color adjustable characteristics are very suitable for application expansion of the photovoltaic building integrated scene. Most of the application of the photovoltaic building integrated market at the present stage is concentrated on a roof platform, and the utilization of the spaces such as the front face of a building, a glass window, a sunshade curtain, a special-shaped roof, a balcony, a skylight and the like is further required to be explored by a technology.
The heat conduction of the shutter photovoltaic system is through the radiation of the window and the heat conduction of the building enclosure structure, and has an important effect on improving the indoor heat comfort performance in summer. In the prior art, the custom attribute of the building and the scale attribute of the photovoltaic exist contradiction, and the structural, aesthetic, safety design, building material installation and other parameter indexes of the building are required to be considered to be matched with the photovoltaic system.
Disclosure of Invention
The invention provides a shutter power generation integrated device, which can effectively promote the overall power generation, realize the utilization and expansion of building light energy, effectively adapt to the customized attribute of the building at the present stage, promote the zero carbon emission of the building and match the existing building design.
The invention also provides a preparation method of the shutter power generation integrated device.
According to an embodiment of the first aspect of the present invention, a shutter power generation integration device includes:
a plurality of perovskite solar cell units;
the first current collecting belts are electrically connected with the bottom electrodes of the perovskite solar cell units in a one-to-one correspondence manner;
the plurality of second current collecting belts are electrically connected with the top electrodes of the perovskite solar cell units in a one-to-one correspondence manner;
a first segmented conductive pull cord having a conductive segment and a non-conductive segment connected to the conductive segment, the conductive segment of the first segmented conductive pull cord electrically connected to first ends of a plurality of the first current collection strips; the non-conductive section of the first partitioned conductive pull rope is connected with the first ends of the plurality of second current collecting belts;
a second segmented conductive pull cord having a conductive segment and a non-conductive segment connected to the conductive segment, the non-conductive segment of the second segmented conductive pull cord being connected to the second ends of the plurality of first current collection strips; the conductive segments of the second segmented conductive pull cord are electrically connected to the second ends of the plurality of second current collection strips.
According to the shutter power generation integrated device provided by the embodiment of the invention, the rotation angle of the shutter power generation blades can be adjusted according to actual needs by driving the first partition conductive pull rope and the second partition conductive pull rope, so that the light incident surface of the shutter power generation blades is ensured to turn to a proper position, the overall power generation amount is improved, and the expansion of building light energy utilization is realized; meanwhile, the shutter power generation blades can be switched in two states of closing and unfolding, so that extra energy output can be provided, a comfortable environment can be created by limiting direct sunlight, heating and air conditioning costs are reduced, heat insulation is provided for a building, and zero carbon emission of the building is promoted.
According to the invention, the shutter power generation integrated device further comprises:
the device comprises a conductive rotating shaft, wherein two conductive rollers are arranged on the conductive rotating shaft at intervals, one conductive roller is connected with the middle part of a first partition conductive pull rope, and the other conductive roller is connected with the middle part of a second partition conductive pull rope.
According to the shutter power generation integrated device provided by the invention, the perovskite solar cell unit, the first current collection belt and the second current collection belt are packaged in the packaging layer.
According to the invention, the perovskite solar cell unit comprises:
a flexible substrate;
the bottom electrode is embedded in the flexible substrate;
a first transmission layer formed on one side of the flexible substrate;
a perovskite light absorption layer formed on one side of the first transmission layer away from the bottom electrode;
the second transmission layer is formed on one side of the perovskite light absorption layer, which is away from the first transmission layer;
and the top electrode is formed on one side of the second transmission layer, which is away from the perovskite light absorption layer.
According to the shutter power generation integrated device provided by the invention, the flexible substrate is made of transparent material, and the thickness of the flexible substrate is smaller than 5 mu m.
A manufacturing method of a blind power generation integration device according to an embodiment of a second aspect of the present invention, the manufacturing method being based on the blind power generation integration device described in any one of the above, includes:
a battery cell preparation step of preparing a perovskite solar battery cell;
an electrode connection step of electrically connecting a bottom electrode of the perovskite solar cell unit with the corresponding first current collection, and electrically connecting a top electrode of the perovskite solar cell unit with the second current collection;
a stay cord connection step of electrically connecting the conductive segments of the first partitioned conductive stay cord with the first ends of the plurality of first current collecting strips and connecting the nonconductive segments of the first partitioned conductive stay cord with the first ends of the plurality of second current collecting strips; simultaneously connecting the non-conductive section of the second zoned conductive drawstring with the second ends of the plurality of first current collection strips; the conductive segments of the second segmented conductive pull cord are electrically connected to the second ends of the plurality of second current collection strips.
According to the preparation method of the shutter power generation integrated device provided by the invention, the preparation method further comprises the following steps before the stay cord connection step:
And packaging the perovskite solar cell unit, the first current collecting belt and the second current collecting belt in a packaging layer through packaging materials, wherein the packaging materials adopt one or a combination of a parylene film, a polyolefin film, a polyethylene-vinyl acetate film and a polyvinyl butyral film.
According to the preparation method of the shutter power generation integrated device provided by the invention, the preparation method further comprises the following steps before the stay cord connection step:
packaging the perovskite solar cell unit and the non-photovoltaic shutter blade in a packaging layer through a packaging material to form a photovoltaic cell; or packaging the perovskite solar cell unit, the crystalline silicon cell and/or the thin film cell type photovoltaic shutter blade into a packaging layer through packaging materials to form a two-end or four-end laminated cell.
According to the preparation method of the shutter power generation integrated device provided by the invention, the preparation steps of the battery unit comprise the following steps:
embedding a bottom electrode in the flexible substrate;
forming a first transmission layer on one side of the flexible substrate;
forming a perovskite light absorption layer on one side of the first transmission layer, which is away from the bottom electrode;
Forming a second transmission layer on one side of the perovskite light absorption layer, which is away from the first transmission layer;
and forming a top electrode on one side of the second transmission layer, which is far away from the perovskite light absorption layer, wherein the top electrode is made of one or a combination of more of gold, silver, copper, aluminum, nickel, molybdenum, tungsten, chromium, ytterbium, carbon, metal nanowires, indium tin oxide, fluorine-doped tin oxide and aluminum-doped zinc oxide.
According to the preparation method of the shutter power generation integrated device provided by the invention, the step of embedding the bottom electrode in the flexible substrate comprises the following steps:
forming a sacrificial layer on a hard substrate;
forming a photoresist layer on one side of the sacrificial layer away from the hard substrate;
photoetching the photoresist layer through a patterned mask;
cleaning the photoresist layer subjected to photoetching, and depositing conductive metal on one side of the photoresist layer, which is away from the sacrificial layer;
cleaning the rest part of the photoresist layer to obtain a metal grid;
depositing the flexible substrate on the metal grid;
peeling off the hard substrate to obtain the flexible substrate embedded with the metal grid inside;
and depositing conductive oxide on one side of the flexible substrate, and compositing the metal grid with the conductive oxide to form the bottom electrode.
The above technical solutions in the embodiments of the present invention have at least one of the following technical effects:
according to the shutter power generation integrated device provided by the embodiment of the invention, the rotation angle of the shutter power generation blades can be adjusted according to actual needs by driving the first partition conductive pull rope and the second partition conductive pull rope, so that the light incident surface of the shutter power generation blades is ensured to turn to a proper position, the overall power generation amount is improved, and the expansion of building light energy utilization is realized; meanwhile, the shutter power generation blades can be switched in two states of closing and unfolding, so that extra energy output can be provided, a comfortable environment can be created by limiting direct sunlight, heating and air conditioning costs are reduced, heat insulation is provided for a building, and zero carbon emission of the building is promoted.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a shutter power generation integration device according to an embodiment of the present invention when deployed;
fig. 2 is a schematic structural diagram of the shutter power generation integration device provided by the embodiment of the invention when closed;
fig. 3 is a flowchart of a method for manufacturing a shutter power generation integrated device according to an embodiment of the present invention.
Reference numerals:
10. perovskite solar cell units; 21. a first current collecting strap; 22. a second current collecting strap; 31. a first zoned conductive pull cord; 32. a second zoned conductive pull cord; 33. a conductive segment; 34. a non-conductive segment; 41. and a conductive roller.
Detailed Description
Embodiments of the present invention are described in further detail below with reference to the accompanying drawings and examples. The following examples are illustrative of the invention but are not intended to limit the scope of the invention.
In the description of the embodiments of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the embodiments of the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In describing embodiments of the present invention, it should be noted that, unless explicitly stated and limited otherwise, the terms "coupled," "coupled," and "connected" should be construed broadly, and may be either a fixed connection, a removable connection, or an integral connection, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in embodiments of the present invention will be understood in detail by those of ordinary skill in the art.
In embodiments of the invention, unless expressly specified and limited otherwise, a first feature "up" or "down" on a second feature may be that the first and second features are in direct contact, or that the first and second features are in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the embodiments of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
The following describes a shutter power generation integration device provided in an embodiment of the present invention with reference to fig. 1 and 2.
Fig. 1 illustrates a schematic structural diagram of a shutter power generation integration device provided by an embodiment of the present invention when being unfolded, and fig. 2 illustrates a schematic structural diagram of a shutter power generation integration device provided by an embodiment of the present invention when being closed, as shown in fig. 1 and 2, the shutter power generation integration device includes a plurality of perovskite solar cells 10, a plurality of first current collecting strips 21, a plurality of second current collecting strips 22, a first partition conductive pull rope 31, and a second partition conductive pull rope 32. The plurality of first current collecting strips 21 are electrically connected to the bottom electrodes of the plurality of perovskite solar cell units 10 in a one-to-one correspondence, and the plurality of second current collecting strips 22 are electrically connected to the top electrodes of the plurality of perovskite solar cell units 10 in a one-to-one correspondence. The first divisional conductive pull cord 31 has a conductive segment 33 and a non-conductive segment 34 connected to the conductive segment 33, the conductive segment 33 of the first divisional conductive pull cord 31 being electrically connected to first ends of the plurality of first current collecting straps 21; the non-conductive segments 34 of the first segmented conductive pull cord 31 are connected to first ends of the plurality of second current collecting straps 22. The second segmented conductive drawstring 32 has a conductive segment 33 and a non-conductive segment 34 connected to the conductive segment 33, the non-conductive segment 34 of the second segmented conductive drawstring 32 being connected to the second ends of the plurality of first current collecting straps 21; the conductive segments 33 of the second segmented conductive pull cord 32 are electrically connected to the second ends of the plurality of second current collecting straps 22.
According to the shutter power generation integrated device provided by the embodiment of the invention, the rotation angle of the shutter power generation blades can be adjusted according to actual needs by driving the first partition conductive pull rope 31 and the second partition conductive pull rope 32, so that the light incident surface of the shutter power generation blades is ensured to turn to a proper position, the overall power generation is improved, and the expansion of building light energy utilization is realized; meanwhile, the shutter power generation blades can be switched in two states of closing and unfolding, so that extra energy output can be provided, a comfortable environment can be created by limiting direct sunlight, heating and air conditioning costs are reduced, heat insulation is provided for a building, and zero carbon emission of the building is promoted.
In the embodiment of the present invention, the first current collecting strap 21 is connected with the bottom electrode of the perovskite solar cell unit 10 by welding, so that holes or electrons generated by the perovskite solar cell unit 10 are respectively conducted into the first current collecting strap 21. Of course, the connection relationship between the perovskite solar cell 10 and the first current collecting tape 21 is not limited thereto, and a connection member having good conductivity may be provided between the perovskite solar cell and the first current collecting tape 21, and the perovskite solar cell and the first current collecting tape may be conducted through the connection member. The connecting piece can be a quick connector or a screw.
The current collecting belt is matched with the conductive pull rope, so that the perovskite solar cell 10 can be fixed and supported, other structures are not needed to support the perovskite solar cell 10, and the structure of the shutter power generation integrated device is simplified.
The connection between the second current collecting stripe 22 and the top electrode of the perovskite solar cell 10 is the same as the connection between the first current collecting stripe 21 and the bottom electrode of the perovskite solar cell 10. The first current collecting belt 21 and the second current collecting belt 22 have the same length, cross-sectional area and other structural parameters, and the first current collecting belt 21 and the second current collecting belt 22 can be interchanged, so that the number of parts of the shutter power generation integrated device is reduced, and the shutter power generation integrated device can be assembled quickly.
In the embodiment of the present invention, the inside of the non-conductive section 34 is a section of metal, the metal and the conductive section 33 are integrally formed, and the outer periphery of the metal is coated with an insulating layer or sleeved with an insulating sleeve. A first end of the plurality of second current collecting straps 22 is connected to an insulating layer or sleeve. Specifically, the first ends of the plurality of second current collecting strips 22 are connected to the insulating layer or the insulating sleeve by fasteners made of insulating material. By arranging the non-conductive section 34 at the connection position of the first partition conductive pull rope 31 and the first end of the second current collecting belt 22, the position of the non-conductive section 34 cannot conduct electricity, so that holes or electrons in the second current collecting belt 22 can be led out to the conductive section 33 of the second partition conductive pull rope 32 only from the second end of the second current collecting belt 22, and the shutter power generation integrated device can conveniently form current output positive and negative electrodes. Meanwhile, the first partition conductive pull rope 31 and the second partition conductive pull rope 32 are provided with insulating layers or insulating sleeves, so that the safety performance of the shutter power generation integrated device is improved.
In an embodiment of the invention, the second end of each second current collecting strip 22 is also provided with an insulating member perpendicular to the second current collecting strips 22, the insulating member extending along the length of the non-conductive section 34, the insulating members of adjacent two second current collecting strips 22 being welded together. The insulating members of the plurality of second current collecting strips 22 are sleeved on the non-conductive sections 34 of the first partition conductive pull ropes 31, so that the connection between the first partition conductive pull ropes 31 and the plurality of second current collecting strips 22 is completed.
It should be noted that, when the non-conductive section 34 of the first segmented conductive thread 31 is provided as an insulating layer or an insulating sheath, the non-conductive section 34 of the second segmented conductive thread 32 is also provided as an insulating layer or an insulating sheath. The second end of the first current collecting strap 21 is also provided with insulation so that the non-conductive section 34 of the second zoned conductive drawstring 32 has the same function as the non-conductive section 34 of the first zoned conductive drawstring 31, while further reducing the number of parts of the shutter power generation integration device. Holes or electrons in the first current collecting strip 21 are conducted only from the first end of the first current collecting strip 21 to the conductive segment 33 of the first zoned conductive pull cord 31.
In the embodiment of the present invention, the perovskite solar cell 10, the first current collecting tape 21 and the second current collecting tape 22 are encapsulated in an encapsulation layer, and the encapsulation material used in the encapsulation layer is one or a combination of several of Parylene (Parylene) film, polyolefin (POE) film, polyethylene-vinyl acetate (EVA) film or polyvinyl butyral (PVA) film.
Here, the first current collecting tape 21 and the second current collecting tape 22 extend along the length direction of the perovskite solar cell 10, and both ends of the first current collecting tape 21 protrude from the inside of the encapsulation layer, respectively, and both ends of the second current collecting tape 22 protrude from the inside of the encapsulation layer, respectively, so as to be connected to the first partition conductive pull rope 31 and the second partition conductive pull rope 32.
It should be noted that, the encapsulation layer may encapsulate only the perovskite solar cell 10, the encapsulation layer is provided with a connection element, the first current collecting strap 21 is connected to the bottom electrode of the perovskite solar cell 10 through the connection element at the encapsulation layer, and the second current collecting strap 22 is connected to the top electrode of the perovskite solar cell 10 through the connection element at the encapsulation layer.
In an embodiment of the present invention, the packaged perovskite solar cell 10 may be used directly as a shutter power generation blade alone; the perovskite solar cell unit 10 can be packaged with the existing non-photovoltaic shutter blade with any configuration to obtain the shutter blade, and the obtained shutter blade has the advantages of small weight and thin thickness, so that the additional power generation function is realized on the premise of not affecting the traditional shutter function; the perovskite solar cell unit 10 and other existing photovoltaic shutter blades can be packaged together to obtain shutter blades, so that a two-end or four-end laminated battery shutter power generation device is formed, and the power generation power is improved on the premise that the functions of the original photovoltaic shutter blades are not affected. When the perovskite solar cell 10 is packaged with other types of louver blades, the obtained louver blades can meet the curvature design, aesthetic design and color requirements of different blades, and achieve customized properties matching existing building materials.
It should be noted that other types of photovoltaic blind slats may be photovoltaic blind slats such as crystalline silicon cells or thin film batteries. Specifically, the crystalline silicon cell includes one of a passivated emitter and back cell (PERC) solar cell, a tunnel oxide passivation contact (TOPCon) solar cell, and an intrinsic thin film Heterojunction (HJT) solar cell, and the thin film cell includes one of a Copper Indium Gallium Selenium (CIGS) solar cell, a gallium arsenide (GaAs) solar cell, and a perovskite solar cell.
In an embodiment of the present invention, as shown in fig. 1 and 2, the shutter power generation integration device further includes a conductive rotating shaft. Two conductive rollers 41 are arranged on the conductive rotating shaft at intervals, one conductive roller 41 is connected with the middle part of the conductive pull rope 31 in the first partition, specifically, a guide groove is formed in the outer peripheral surface of the conductive roller 41, and the middle part of the conductive pull rope 31 in the first partition is wound in the guide groove of the conductive roller 41. The other conductive roller 41 is connected with the middle part of the second partition conductive pull rope 32, specifically, the middle part of the second partition conductive pull rope 32 is wound in a guide groove of the other conductive roller 41.
In the embodiment of the present invention, the conductive shaft is connected to the driving device, and an insulating member is disposed between the two conductive rollers 41 and the conductive shaft. The two conductive rollers 41 are respectively a current output positive electrode and a current output negative electrode of the shutter power generation integrated device, and the two conductive rollers 41 are electrically connected with the two output wires in a one-to-one correspondence manner. The conductive roller 41 rotates with the conductive rotating shaft to change the angle of the perovskite solar cell 10.
Further, by additionally arranging a current or light sensor at the conductive rotating shaft, the current or light sensor is electrically connected with a controller, and the controller is electrically connected with a driving device, so that the shutter power generation device automatically tracks the rotation of the optimal light irradiation angle, the light tracking effect is realized, and the generated energy of the shutter power generation integrated device is further improved.
In one embodiment of the present invention, the outer peripheral surface of the conductive roller 41 has a gear structure, and racks are disposed on the sides of the first partition conductive pull cord 31 and the second partition conductive pull cord 32 facing the conductive roller 41, and the gear structures of the two conductive rollers 41 are respectively meshed with the corresponding racks. The conductive roller 41 is driven to rotate through the conductive rotating shaft, the conductive roller 41 drives the first subarea conductive pull rope 31 and the second subarea conductive pull rope 32 to move in the same direction, so that the first current collecting belt 21 and the second current collecting belt 22 are driven to move, and the rotation of the shutter generating blade is pulled, the adjustable rotation angle of the shutter generating blade is realized, and the rotation angle is determined by the movement distance of the racks. The user can adjust the rotation angle of shutter power generation blade according to actual need for whether be daytime or night, shutter power generation blade's income plain noodles can both turn to suitable position, further promotes whole generated energy.
The louver blades turn to the outdoor sunlight direction during the daytime, power generation is realized by utilizing sunlight, the louver blades turn to the indoor during the nighttime, power generation is realized by utilizing indoor illumination by utilizing the weak light effect of the perovskite solar cell unit 10, and the power generation amount of the louver power generation integrated device is further improved.
In the embodiment of the present invention, the angle adjustment manner of the perovskite solar cell unit 10 may be various, and may be adjusted by a driving device or manually. For example, the user pulls the non-conductive section 34 of the first zoned conductive draw cord 31 in a direction away from the conductive roller 41 (i.e., downward in fig. 2) by holding the non-conductive section 34 of the first zoned conductive draw cord 31, thereby effecting the switching of the shutter power generation blade from the deployed state to the closed state. The user pulls the non-conductive section 34 of the second zoned conductive drawstring 32 in a direction away from the conductive roller 41 (i.e., downward in fig. 2) by holding the non-conductive section 34 of the second zoned conductive drawstring 32, thereby effecting switching of the shutter power generation blades from the closed state to the extended state.
When the shutter luminous blades are in an unfolding state, the perovskite solar cell unit 10 absorbs sunlight and converts light energy into electric energy, so that energy is provided for electric equipment; when the shutter luminescent blade is in a closed state, the shutter power generation integrated device can provide energy, and the shutter power generation integrated device also isolates sunlight outdoors, so that the shutter power generation integrated device has a heat insulation function.
In an embodiment of the present invention, the perovskite solar cell 10 includes a flexible substrate, a bottom electrode, a first transmission layer, a perovskite light absorbing layer, a second transmission layer, and a top electrode. The bottom electrode is partially embedded in the flexible substrate, the bottom electrode is formed by compounding a metal grid and a conductive oxide, wherein the metal grid can be a random metal grid or a patterned metal grid, and the conductive oxide is made of one or a combination of more of Indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO) and aluminum-doped zinc oxide (AZO). The first transmission layer is formed on one side of the flexible substrate, the perovskite light absorption layer is formed on one side of the first transmission layer, which is away from the bottom electrode, and the second transmission layer is formed on one side of the perovskite light absorption layer, which is away from the first transmission layer. The top electrode is formed on one side of the second transmission layer, which is far away from the perovskite light absorption layer, and the top electrode is made of one or a combination of more of gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), molybdenum (Mo), tungsten (W), chromium (Cr), ytterbium (Yb), carbon (C), a metal nanowire, indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO) and aluminum-doped zinc oxide (AZO). When packaged with existing crystalline silicon cells and/or thin film cell type photovoltaic louver blades, the top electrode is a transparent conductive electrode, preferably Indium Tin Oxide (ITO), fluorine doped tin oxide (FTO), aluminum doped zinc oxide (AZO), or the like.
Here, the perovskite solar cell 10 has a formal structure and a trans-structure. For perovskite solar cell 10 of formal structure, the first transport layer is an electron transport layer and the second transport layer is a hole transport layer; for the trans-structured perovskite solar cell 10, the first transport layer is a hole transport layer and the second transport layer is an electron transport layer.
The electron transport layer is made of tin dioxide SnO 2 Titanium dioxide TiO 2 One of zinc oxide ZnO, carbon 60 or fullerene derivative PCBM. The hole transport layer adopts Spiro-OMeTAD (2, 2', 7' -tetra [ N, N-di (4-methoxyphenyl) amino group)]-9,9' -spirobifluorene), PTAA (triphenylamine polymer), PEDOT: PSS (3, 4-ethylenedioxythiophene: polystyrene sulfonate) or nickel oxide (NiO).
In the embodiment of the present invention, the flexible substrate is made of a transparent material, and in the embodiment, the flexible substrate is a Parylene (Parylene) and/or Polyimide (PI) ultrathin flexible substrate. The thickness of the flexible substrate is less than 5 μm, so that the perovskite solar cell 10 has the advantages of light weight, thin thickness, flexibility and bendability, and is more suitable as a louver power generation blade.
The following describes a method for manufacturing a shutter power generation integrated device according to the present invention with reference to fig. 3. Fig. 3 illustrates a flowchart of a method for manufacturing a shutter power generation integration device according to an embodiment of the present invention, and as shown in fig. 3, the method for manufacturing a shutter power generation integration device according to the present invention is based on the shutter power generation integration device according to any one of the embodiments, and the method for manufacturing a shutter power generation integration device includes the following steps:
The first current collecting strap 21 is connected to the bottom electrode of the perovskite solar cell unit 10 by welding, and the second current collecting strap 22 is connected to the top electrode of the perovskite solar cell unit 10 by welding. The current generated by the perovskite solar cell unit 10 is conducted to the outside through the first current collecting stripe 21 or the second current collecting stripe 22.
It should be noted that, the non-conductive section 34 of the first partition conductive pull cord 31 is formed by a section of metal, the metal and the conductive section 33 are integrally formed, the periphery of the metal is coated with an insulating layer or sleeved with an insulating sleeve, the first ends of the plurality of second current collecting strips 22 are connected with the insulating layer or the insulating sleeve through fasteners, and the fasteners are made of insulating materials. Holes or electrons within the second current collecting strip 22 are only conducted from the second end of the second current collecting strip 22 to the conductive segment 33 of the second segmented conductive pull cord 32.
It should be further noted that, the non-conductive section 34 of the second partition conductive pull cord 32 is also made of a section of metal, the metal and the conductive section 33 are integrally formed, the periphery of the metal is coated with an insulating layer or sleeved with an insulating sleeve, the second ends of the plurality of first current collecting strips 21 are connected with the insulating layer or the insulating sleeve through fasteners, and the fasteners are made of insulating materials. Holes or electrons in the first current collecting strip 21 are only conducted from the first end of the first current collecting strip 21 and flow to the conductive segment 33 of the first zoned conductive pull 31.
In an embodiment of the present invention, before the pull rope connection step, further includes:
at step 290, the perovskite solar cell 10 and the first and second current collection stripes 21 and 22 are encapsulated within an encapsulation layer by an encapsulation material. The packaging material adopts one or a combination of a plurality of Parylene (Parylene) films, polyolefin (POE) films, polyethylene-vinyl acetate (EVA) films or polyvinyl butyral (PVA) films.
In an embodiment of the present invention, before the pull rope connection step, further includes:
step 290, packaging the perovskite solar cell unit 10 and the non-photovoltaic shutter blade into a packaging layer through a packaging material to form a photovoltaic cell; or the perovskite solar cell unit 10, the crystalline silicon cell and/or the thin film cell type photovoltaic shutter blade are packaged in the packaging layer through the packaging material to form a two-end or four-end laminated cell.
The crystalline silicon cell and/or the thin film cell type photovoltaic louver blade is electrically connected to the first current collecting tape 21 and the second current collecting tape 22 in the same manner as the perovskite solar cell 10.
The packaged perovskite solar cell 10 can be directly used as a shutter power generation blade independently; the perovskite solar cell unit 10 and the existing non-photovoltaic shutter blade with any configuration can be packaged to obtain the shutter blade, and the additional power generation function is realized on the premise of not affecting the function of the traditional shutter; the perovskite solar cell unit 10 and other existing photovoltaic shutter blades can be packaged together to obtain shutter blades, so that a two-end or four-end laminated cell shutter power generation integrated device is formed, and the power generation power is improved on the premise that the functions of the original photovoltaic shutter blades are not affected.
In an embodiment of the invention, the battery cell preparation step comprises the steps of:
step 110, embedding a bottom electrode inside the flexible substrate.
At step 120, a first transfer layer is formed on one side of the flexible substrate.
At step 130, a perovskite light absorbing layer is formed on a side of the first transport layer facing away from the bottom electrode.
In an embodiment of the present invention, the step of forming a perovskite light absorbing layer on a side of the first transport layer facing away from the bottom electrode comprises the steps of:
spin-coating a first mixed solvent on one side of the first transmission layer, which is away from the bottom electrode, at a first preset spin-coating speed, wherein the spin-coating time is a first preset time;
and (3) maintaining the temperature at 70 ℃ for 1min, and naturally cooling to room temperature to finish annealing to form the perovskite light absorption layer.
In an embodiment of the present invention, when the perovskite solar cell 10 is individually encapsulated by an encapsulation material or the single perovskite solar cell 10 and the non-photovoltaic window blade are encapsulated within an encapsulation layer, the first mixed solvent is prepared by encapsulating lead iodide (PbI 2 ) And formamidine iodine (FAI) dissolved in dimethyl sulfoxide (DMSO) and N, N-Dimethylformamide (DMF), wherein the volume ratio of DMSO to DMF in the mixed solvent is 1:9, and heating to 70deg.C is required during mixing to ensure complete dissolution. The first transport layer in this embodiment is an electron transport layer. The first predetermined spin speed during spin coating was 2000 revolutions per minute and the first predetermined time was 30 seconds.
In an embodiment of the present invention, when the perovskite solar cell 10 and the crystalline silicon cell and/or the thin film cell type photovoltaic louver blade are encapsulated in the encapsulation layer by the encapsulation material, the lead iodide (PbI) is weighed in a desired ratio 2 ) Lead bromide (PbBr) 2 ) Five powders of formamidine iodine (FAI), methylamine bromide (MABr) and cesium iodide (CsI) are attached to a first transport layer by vacuum sequential vapor deposition or solution method, and the first transport layer is a hole transport layer at this time, thereby forming a perovskite light absorption layer.
In step 140, a second transport layer is formed on a side of the perovskite light absorbing layer facing away from the first transport layer.
In an embodiment of the invention, the step of forming a second transmission layer on a side of the perovskite light absorbing layer facing away from the first transmission layer comprises the steps of:
and spin-coating a second mixed solvent on one side of the perovskite light absorption layer, which is away from the first transmission layer, at a second preset spin-coating speed, wherein the spin-coating time is a second preset time.
The second mixed solvent is obtained by dissolving 2,2', 7' -tetrakis [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene (Spiro-OMeTAD) in Chlorobenzene (CB) solvent, wherein the concentration of the Spiro-OMeTAD in the obtained solution is 72.3mg/mL, and stirring vigorously to completely dissolve the Spiro-OMeTAD. Then, 28.8. Mu.L of 4-tert-butylpyridine (4-tert-butyl pyridine) and 17.5. Mu.L of lithium bis (trifluoromethanesulfonyl) imide (Li-TFSI) in acetonitrile (concentration: 520 mg/mL) were sequentially added to 1mL of the obtained solution, and the mixture was stirred uniformly to obtain a second mixed solvent.
The second preset spin coating speed is 4000 revolutions per minute, the second preset time is 30 seconds, and the second transmission layer is formed after the spin coating is finished. The second transport layer prepared through the above steps is a hole transport layer, and the perovskite solar cell 10 composed of the above second transport layer is a perovskite solar cell of a formal structure.
In the examples of the present invention, a fullerene derivative (PC 61 BM) was dissolved in a Chlorobenzene (CB) solvent, and the concentration of PC61BM in the obtained solution was 20mg/mL. The obtained solution was stirred on a hot bench at 60 ℃ for 2 hours, and then the obtained solution was spin-coated on the prepared perovskite light absorbing layer. The spin coating speed was 1000 revolutions per minute and the spin coating time was 30 seconds to form a second transfer layer. The second transport layer prepared through the above steps is a hole transport layer, and the perovskite solar cell 10 composed of the above second transport layer is a perovskite solar cell with a trans-structure.
At step 150, a top electrode is formed on a side of the second transport layer facing away from the perovskite light absorbing layer.
The top electrode is made of one or a combination of several of gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), molybdenum (Mo), tungsten (W), chromium (Cr), ytterbium (Yb), carbon (C), metal nanowires, indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO) and aluminum-doped zinc oxide (AZO), and is made of ITO. Transferring the perovskite solar cell 10 with the second transmission layer to a magnetron sputtering cabin, depositing a layer of ITO on one side of the second transmission layer, which is far away from the perovskite light absorption layer, forming a transparent top electrode, and finally tearing off the transparent top electrode from the glass substrate to finish the preparation of the single perovskite solar cell 10.
The perovskite solar cell 10 prepared by the steps has the weight of less than 10g per square meter, the thickness of the functional layer is 1-2 mu m, the perovskite solar cell 10 has the advantages of light weight, thin thickness, flexibility, lamination and the like, the energy-to-mass ratio of the cell is more than 5w/g, the preparation cost is half to one third of that of a silicon cell, and the bendable radius is less than 1 mm. The prepared perovskite solar cell unit 10 also has a lower temperature coefficient and obvious weak light effect, so that the louver power generation integrated device can also have obvious photoelectric conversion efficiency under weak light, and therefore, the louver power generation integrated device expands the available photovoltaic space of a building from a roof plane to an indoor space elevation, and simultaneously can expand the available photovoltaic space from a building sunny side to a building sunny side so as to promote the utilization of the photovoltaic space of a whole building.
It should be noted that, the perovskite solar cell 10 may be light brown in color, or may be different in color, and may be specifically selected according to the actual needs of the user. Specifically, perovskite quantum dot materials with different colors can be added into the packaging material to change the color of the perovskite solar cell unit 10, a color glaze layer can be deposited on the surface of the substrate, and the color of the perovskite solar cell unit 10 can be adjusted by adjusting the color of the color perovskite light absorption layer.
In an embodiment of the present invention, the step of embedding the bottom electrode inside the flexible substrate includes the steps of:
at step 1111, a sacrificial layer is formed on the hard substrate.
The hard base may be one of a glass substrate, a quartz substrate, or a silicon substrate, and in this embodiment, a glass substrate is used as the hard base. Immersing the glass substrate into a detergent for ultrasonic cleaning, rinsing the detergent with deionized water, and immersing the glass substrate into deionized water, acetone and isopropanol in sequence for ultrasonic cleaning to serve as a hard substrate. The sacrificial layer is formed by depositing an oxide such as aluminum oxide or zinc oxide on the hard substrate.
At 1112, a photoresist layer is formed on a side of the sacrificial layer facing away from the rigid substrate.
Step 1113, performing photolithography on the photoresist layer through the patterned mask.
After the photoresist layer is formed, exposure is carried out under the light of AM1.5 through a mask plate with specific patterning, so that the patterned metal grid can be conveniently obtained.
Step 1114, the photoresist layer subjected to the photolithography is cleaned, and a conductive metal is deposited on a side of the photoresist layer facing away from the sacrificial layer.
The conductive metal is a metal which does not react with the perovskite material, and the metal can be one or more metals selected from gold (Au), silver (Ag), aluminum (Al), nickel (Ni) and titanium (Ti), and nickel (Ni) with the thickness of 40nm is deposited on the side of the photoresist layer, which is away from the sacrificial layer in the embodiment.
Step 1115, cleaning the rest part of the photoresist layer to obtain the metal grid.
In this embodiment, the remaining portion of the photoresist layer is cleaned by DMF solvent, thereby obtaining a patterned metal grid.
Step 1116, depositing a flexible substrate on the metal mesh.
The material deposited on the patterned metal grid is a PI film with the thickness of 2 mu m, and the flexible substrate is prepared by spin coating, knife coating, spray coating, slit coating or Chemical Vapor Deposition (CVD) process.
Step 1117, peeling off the hard substrate to obtain the flexible substrate with the metal grid embedded inside.
In step 1118, a conductive oxide is deposited on one side of the flexible substrate, and the metal mesh is composited with the conductive oxide to form a bottom electrode.
It should be noted that, the conductive oxide is one or a combination of several of Indium Tin Oxide (ITO), fluorine doped tin oxide (FTO), aluminum doped zinc oxide (AZO), and in this embodiment, the conductive oxide is Indium Tin Oxide (ITO).
Transferring the obtained flexible substrate into a magnetron sputtering cabin, depositing ITO on one side of the flexible substrate, forming a patterned metal grid and conductive oxide composite bottom electrode, and adhering one surface of the non-bottom electrode to the glass substrate.
In the embodiment of the invention, the sacrificial layer which is not formed with the photoresist layer is heated for 25 to 35 minutes at a temperature of 280 to 320 ℃ so that random cracks are generated on the sacrificial layer. And depositing Ni with the thickness of 40nm on the cracked sacrificial layer, and removing the sacrificial layer by etching to obtain a random metal grid. The material deposited on the random metal grid is a Parylene film with a thickness of 2 μm, and the flexible substrate is prepared by spin coating, knife coating, spray coating, slot coating or Chemical Vapor Deposition (CVD) process. And peeling the hard substrate to obtain the flexible substrate embedded with the metal grid. In an embodiment of the present invention, the step of forming a first transfer layer on one side of a flexible substrate includes the steps of:
step 1211 spin coating SnO on one side of the flexible substrate 2 An aqueous dispersion.
In the spin coating process, the spin coating rotating speed is 4000 revolutions per minute, the spin coating time is 30 seconds, and the spin coating is kept at 150 ℃ for 30 minutes after the spin coating is finished.
At step 1212, the flexible substrate is placed in an ultraviolet-ozone washer for a predetermined time, in this example 20 minutes.
In step 1213, the flexible substrate is placed in a glove box and naturally cooled to room temperature to form a first transfer layer on one side of the flexible substrate.
And after the cleaning is finished, transferring the flexible substrate into a glove box, and naturally cooling to room temperature to finish annealing, thereby finishing the preparation of the first transmission layer.
The first transport layer prepared through the above steps is an electron transport layer, and the perovskite solar cell 10 composed of the first transport layer is a solar cell of a formal structure.
In an embodiment of the present invention, the step of forming the first transmission layer on one side of the flexible substrate may further include the steps of:
step 1221, spin coating 3, 4-ethylenedioxythiophene on one side of the flexible substrate: polystyrene sulfonate (PEDOT: PSS) solution. The spin coating process is carried out at a rotation speed of 2000 revolutions per minute for 30s, and the spin coating process is carried out at a temperature of 130 ℃ for 30min after the spin coating process is finished.
And 1222, naturally cooling the flexible substrate to room temperature to finish annealing.
In step 1223, PTAA is dissolved in Chlorobenzene (CB) to obtain a solution having a PTAA concentration of 2mg/mL, and the obtained solution is spin-coated on a PEDOT: PSS layer.
The spin-coating speed is 4000 rpm, the spin-coating time is 30s, and the spin-coating is heated at 150 ℃ for 20min after the spin-coating is finished.
And 1224, naturally cooling the flexible substrate to room temperature and annealing to form a first transmission layer.
The first transport layer prepared through the above steps is a hole transport layer, and the perovskite solar cell 10 composed of the first transport layer is a solar cell with a trans-structure.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A shutter power generation integration device, comprising:
a plurality of perovskite solar cell units;
the first current collecting belts are electrically connected with the bottom electrodes of the perovskite solar cell units in a one-to-one correspondence manner;
the plurality of second current collecting belts are electrically connected with the top electrodes of the perovskite solar cell units in a one-to-one correspondence manner;
A first segmented conductive pull cord having a conductive segment and a non-conductive segment connected to the conductive segment, the conductive segment of the first segmented conductive pull cord electrically connected to first ends of a plurality of the first current collection strips; the non-conductive section of the first partitioned conductive pull rope is connected with the first ends of the plurality of second current collecting belts;
a second segmented conductive pull cord having a conductive segment and a non-conductive segment connected to the conductive segment, the non-conductive segment of the second segmented conductive pull cord being connected to the second ends of the plurality of first current collection strips; the conductive segments of the second segmented conductive pull cord are electrically connected to the second ends of the plurality of second current collection strips.
2. The blind power generation integration apparatus of claim 1, further comprising:
the device comprises a conductive rotating shaft, wherein two conductive rollers are arranged on the conductive rotating shaft at intervals, one conductive roller is connected with the middle part of a first partition conductive pull rope, and the other conductive roller is connected with the middle part of a second partition conductive pull rope.
3. The blind power generation integration device of claim 1, wherein the perovskite solar cell unit and the first and second current collection strips are encapsulated within an encapsulation layer.
4. A shutter power generation integrated apparatus as claimed in any one of claims 1 to 3, wherein the perovskite solar cell unit comprises:
a flexible substrate;
the bottom electrode is embedded in the flexible substrate;
a first transmission layer formed on one side of the flexible substrate;
a perovskite light absorption layer formed on one side of the first transmission layer away from the bottom electrode;
the second transmission layer is formed on one side of the perovskite light absorption layer, which is away from the first transmission layer;
and the top electrode is formed on one side of the second transmission layer, which is away from the perovskite light absorption layer.
5. The integrated device for generating power by a shutter according to claim 4, wherein the flexible substrate is made of transparent material, and the thickness of the flexible substrate is less than 5 μm.
6. A method of manufacturing a blind power generation integration apparatus, the method being based on the blind power generation integration apparatus according to any one of claims 1 to 5, comprising:
a battery cell preparation step of preparing a perovskite solar battery cell;
an electrode connection step of electrically connecting a bottom electrode of the perovskite solar cell unit with the corresponding first current collection, and electrically connecting a top electrode of the perovskite solar cell unit with the second current collection;
A stay cord connection step of electrically connecting the conductive segments of the first partitioned conductive stay cord with the first ends of the plurality of first current collecting strips and connecting the nonconductive segments of the first partitioned conductive stay cord with the first ends of the plurality of second current collecting strips; simultaneously connecting the non-conductive section of the second zoned conductive drawstring with the second ends of the plurality of first current collection strips; the conductive segments of the second segmented conductive pull cord are electrically connected to the second ends of the plurality of second current collection strips.
7. The method of manufacturing a power generation integration device for a blind of claim 6, further comprising, prior to the pull-cord coupling step:
encapsulating the perovskite solar cell unit, the first current collection belt and the second current collection belt in an encapsulation layer through an encapsulation material; the packaging material adopts one or a combination of a plurality of parylene films, polyolefin films, polyethylene-vinyl acetate films and polyvinyl butyral films.
8. The method of manufacturing a power generation integration device for a blind of claim 6, further comprising, prior to the pull-cord coupling step:
packaging the perovskite solar cell unit and the non-photovoltaic shutter blade in a packaging layer through a packaging material to form a photovoltaic cell; or packaging the perovskite solar cell unit, the crystalline silicon cell and/or the thin film cell type photovoltaic shutter blade into a packaging layer through packaging materials to form a two-end or four-end laminated cell.
9. The method for manufacturing a blind power generation integration device according to any one of claims 6 to 8, wherein the battery unit manufacturing step includes the steps of:
embedding a bottom electrode in the flexible substrate;
forming a first transmission layer on one side of the flexible substrate;
forming a perovskite light absorption layer on one side of the first transmission layer, which is away from the bottom electrode;
forming a second transmission layer on one side of the perovskite light absorption layer, which is away from the first transmission layer;
forming a top electrode on a side of the second transmission layer facing away from the perovskite light absorption layer; the top electrode is made of one or more of gold, silver, copper, aluminum, nickel, molybdenum, tungsten, chromium, ytterbium, carbon, metal nanowires, indium tin oxide, fluorine-doped tin oxide and aluminum-doped zinc oxide.
10. The method of manufacturing a blind power generation integrated device according to claim 9, characterized in that the step of embedding a bottom electrode inside the flexible substrate includes the steps of:
forming a sacrificial layer on a hard substrate;
forming a photoresist layer on one side of the sacrificial layer away from the hard substrate;
photoetching the photoresist layer through a patterned mask;
Cleaning the photoresist layer subjected to photoetching, and depositing conductive metal on one side of the photoresist layer, which is away from the sacrificial layer;
cleaning the rest part of the photoresist layer to obtain a metal grid;
depositing the flexible substrate on the metal grid;
peeling off the hard substrate to obtain the flexible substrate embedded with the metal grid inside;
and depositing conductive oxide on one side of the flexible substrate, and compositing the metal grid with the conductive oxide to form the bottom electrode.
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