CN116190959A - Chip-to-waveguide switching device - Google Patents
Chip-to-waveguide switching device Download PDFInfo
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- CN116190959A CN116190959A CN202310146371.XA CN202310146371A CN116190959A CN 116190959 A CN116190959 A CN 116190959A CN 202310146371 A CN202310146371 A CN 202310146371A CN 116190959 A CN116190959 A CN 116190959A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
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Abstract
Compared with the chip pin connected with the microstrip line and the microstrip line switching interface for introducing the signal into the waveguide, the chip-to-waveguide switching device provided by the invention removes the microstrip line and the switching structure (such as a high-frequency substrate integrated with the microstrip line), reduces the complexity of the system and further reduces unnecessary radiation interference. While reducing link loss. In addition, the signals do not need to be led into the waveguide tube through the semi-open microstrip line, and mutual coupling among channels is reduced.
Description
Technical Field
The invention relates to the field of vehicle millimeter wave radars and unmanned aerial vehicles, in particular to a chip-to-waveguide switching device.
Background
With the development of unmanned, high-performance millimeter wave radar is also urgently needed. The detection distance is far, the precision is high, the multi-point cloud is high, the cost is low, and 4D (distance, speed, angle, height) detection and the like are also targets pursued by modern millimeter wave radars. This places higher demands on millimeter wave radar antennas. So that millimeter wave radar needs more channels and antennas, the traditional microstrip antenna has no advantage along with the increase of the number of antennas and the increase of the caliber surface. This tends to increase the cost because a large caliber surface increases the area of the expensive high frequency sheet material. And too many microstrip antennas may increase the complexity of the microstrip interconnection structure and the length of the microstrip line. The loss of the interconnection structure between the microstrip antenna and the chip pins of the transceiver chip is increased, the radiation interference of the feeder line and the mutual coupling between the feeder lines can be increased by the complex interconnection structure, and the performance of the antenna is greatly reduced.
Based on the above, the application of the 3D waveguide antenna in millimeter wave radar is becoming wider and wider. The interconnection between the 3D waveguide antenna and the chip pins becomes one of the core technologies. The conversion structure from the chip pin of the existing transceiver chip to the waveguide antenna is that the microstrip line is led out from the chip pin, and then the microstrip line is converted to the waveguide of the 3D waveguide antenna through the conversion structure. The technology needs a high-frequency substrate integrated with a microstrip line, the high-frequency substrate with the integrated microstrip line can increase the complexity of a system, so that excessive radiation interference and mutual coupling among channels are caused, and the microstrip line can also bring about insertion loss of the channels to influence the signal transmission quality.
Disclosure of Invention
The invention provides a chip-to-waveguide switching device which is used for solving the technical problem of a waveguide antenna.
The invention provides a chip-to-waveguide switching device, comprising:
a transceiver chip;
a waveguide tube positioned at one side of the transceiver chip;
a substrate structure located between the transceiver chip and the waveguide; the substrate structure comprises at least two metal layers which are oppositely arranged, and a dielectric substrate positioned between the at least two metal layers, wherein the metal layer facing the transceiver chip is connected with pins of the transceiver chip, and the metal layer facing the waveguide tube is connected with the waveguide tube;
the substrate structure is provided with signal transmission channels penetrating through all the metal layers and the dielectric substrate, and the waveguide tube is provided with a waveguide cavity corresponding to the position of the signal transmission channel.
In a possible implementation manner, one of the at least two metal layers comprises a first dielectric layer arranged close to the transceiver chip, the first dielectric layer is connected with the pins, and the surface of the first dielectric layer is coated with copper;
the signal transmission channel comprises a first signal transmission port formed on the first dielectric layer.
In a possible implementation manner, the other one of the at least two metal layers comprises a second dielectric layer arranged close to the waveguide, the second dielectric layer is connected with the waveguide, and the surface of the second dielectric layer is coated with copper;
the signal transmission channel comprises a second signal transmission port formed on the second medium layer, and the first signal transmission port and the second signal transmission port jointly form two ends of the signal transmission channel.
In one possible implementation, the second dielectric layer is disposed parallel to the first dielectric layer, and the first signal transmission port is located at a center of the first dielectric layer, and the second signal transmission port is located at a center of the second dielectric layer.
In one possible implementation manner, the signal transmission channel includes a metal signal transmission hole formed on the dielectric substrate, and two ends of the metal signal transmission hole are opposite to the first signal transmission port and the second signal transmission port respectively.
In a possible implementation manner, a copper sheet interface is arranged in the middle of the first dielectric layer, the copper sheet interface is connected with the pins, and the first signal transmission port is arranged in the middle of the copper sheet interface; the aperture of the metal signal transmission hole is consistent with that of the first signal transmission hole and is concentrically arranged with the first signal transmission hole;
the second medium layer is provided with a metal connection piece, the metal connection piece is connected with the waveguide tube, the second signal transmission port is formed in the middle of the metal connection piece, and the second signal transmission port is concentric with the metal signal transmission hole and the first signal transmission port and has the same aperture.
In one possible implementation, the second dielectric layer is hollow, the metal connection piece is in a convex step shape or a square step shape, and the metal connection piece extends from one side inner side wall of the second dielectric layer to the inner center.
In a possible implementation manner, the substrate structure is further provided with a metallized through hole array penetrating through all the metal layers and the dielectric substrate, and the shape of the metallized through hole array is matched with that of the waveguide cavity and distributed along the outer side of the waveguide cavity.
In a possible implementation manner, the waveguide tube is a rectangular waveguide, the waveguide cavity is a rectangular through hole, the metallized through hole array is distributed on the substrate structure along a rectangle, and a rectangular opening matched with the shape of the waveguide cavity is formed in the middle of the second dielectric layer.
In a possible implementation manner, the waveguide tube is an annular waveguide, the waveguide cavity is a circular through hole, the metallized through hole array is distributed on the substrate structure along an annular shape, and an annular opening matched with the shape of the waveguide cavity is formed in the middle of the second dielectric layer.
In a possible implementation manner, a first connection layer is further arranged between the substrate structure and the waveguide tube, a second connection layer is further arranged between the substrate structure and the chip body, and the first connection layer and the second connection layer are welded or glued.
Compared with the chip pin connected with the microstrip line and the microstrip line switching interface for introducing the signal into the waveguide, the chip-to-waveguide switching device provided by the invention removes the microstrip line and the microstrip switching structure thereof (such as a high-frequency substrate integrated with the microstrip line), reduces the complexity of the system, thereby reducing unnecessary radiation interference and simultaneously reducing link loss. In addition, the signals do not need to be led into the waveguide tube through the semi-open microstrip line, and mutual coupling among channels is reduced.
Drawings
Fig. 1 is a schematic overall structure of a chip-to-waveguide switching device according to an embodiment of the present disclosure;
FIG. 2 is a schematic plan view of the first dielectric layer of FIG. 1;
FIG. 3 is a schematic plan view of the second dielectric layer of FIG. 1;
FIG. 4 is a schematic plan view of the waveguide of FIG. 1;
FIG. 5 is a graph showing signal reflectance and transmission coefficient characteristics measured by a chip-to-waveguide switching device according to an embodiment of the present disclosure;
fig. 6 is a schematic diagram of the overall structure of the chip-to-waveguide switching device of the annular waveguide in the chip-to-waveguide switching device according to an embodiment of the present application.
Reference numerals illustrate:
100. a transceiver chip; 200. a substrate structure; 300. a waveguide; 400. a connection layer;
101. a chip body; 102. a pin;
201. a first dielectric layer; 202. a dielectric substrate; 203. a second dielectric layer; 204. a signal transmission channel; 205. an array of metallized vias;
201a, a first signal transmission port; 201b, copper sheet interface;
202a, a metal signal transmission hole;
203a, a second signal transmission port; 203b, metal connection pieces; 203c, rectangular openings; 203d, an annular opening;
301. a waveguide cavity.
Detailed Description
In order that those skilled in the art will better understand the technical solutions of the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
The conversion structure from the pin of the existing chip to the waveguide antenna is that the microstrip line is led out from the pin of the chip, and then the microstrip line is converted to the waveguide tube of the 3D waveguide antenna through the conversion structure. This technique requires a high frequency substrate, which not only increases the cost, but also increases the radiation interference and the mutual coupling between channels due to the introduction of microstrip lines, and also brings about insertion loss of the channels. Therefore, a switching structure from the chip pin to the waveguide tube is provided, and the chip pin directly leads signals into the waveguide tube through the substrate and the metallized signal transmission through hole without leading out microstrip lines and high-frequency substrates. The cost can be greatly reduced, the insertion loss and the mutual coupling are reduced, the complexity of the system is also reduced, and the method has strong practicability in the millimeter wave radar field.
FIG. 1 is a schematic diagram of the overall structure of a chip-to-waveguide switching device; fig. 2 is a schematic plan view of a first dielectric layer 201; fig. 3 is a schematic plan view of the second dielectric layer 203; FIG. 4 is a schematic plan view of a waveguide 300; referring to fig. 1 to 4, there is shown a chip-to-waveguide switching device according to the present invention, which includes a transceiver chip 100, a substrate structure 200, and a waveguide 300. The transceiver chip 100 is used for sending or receiving signals and comprises a chip body 101 and a plurality of pins 102, the pins 102 are distributed on one side surface of the chip body 101, and the pins 102 are used for outwards transmitting signals transmitted by the chip body 101 or receiving signals transmitted from the outside;
the waveguide 300 is a part of the whole waveguide structure and is used as a signal receiving and transmitting port, and is arranged at one end of the substrate structure 200 far away from the receiving and transmitting chip 100 and connected with the metal layer, and a waveguide cavity 301 corresponding to the position of the signal transmission channel 204 is arranged in the middle of the waveguide 300.
The substrate structure 200 is used for connecting the transceiver chip 100 and the waveguide 300, and transmitting signals between the transceiver chip 100 and the waveguide 300, and one end of the substrate structure 200 is connected with the pin 102 of the transceiver chip 100, and comprises two parallel metal layers and a dielectric substrate 202 positioned between the metal layers; the substrate structure 200 has a signal transmission channel 204 formed thereon, and the signal transmission channel 204 penetrates through two ends of the substrate structure 200, for transmitting signals transmitted from the pins 102 or transmitting signals received from outside to the pins 102.
The substrate structure 200 replaces the microstrip line connection waveguide 300 led out from the chip pin 102 or the high-frequency substrate connection waveguide 300 integrated with the microstrip line in the prior art, so that signal interference loss generated by the microstrip line and the high-frequency substrate can be effectively reduced.
The chip-to-waveguide switching device provided by the invention has the advantages that the pin 102 of the chip body 101 is directly connected with the metal layer in the substrate structure 200, signals are introduced into the waveguide 300 through the metallized through holes, compared with the chip pin 102 connected with the microstrip line, and signals are introduced into the waveguide through the microstrip line switching interface. While reducing link loss. In addition, the signal does not need to be introduced into the waveguide 300 through a semi-open microstrip line, and the cross-coupling between channels is reduced.
As shown in fig. 1 and fig. 2, the metal layer in the substrate structure 200 includes a first dielectric layer 201 adjacent to the transceiver chip 100 and connected to the pin 102, a copper-clad layer is disposed on a surface of the first dielectric layer 201, a first signal transmission port 201a is formed in the middle of the first dielectric layer 201, and the first signal transmission port 201a is located at one end of the signal transmission channel 204.
The first dielectric layer 201 with copper coating is equivalent to a ground wire, so that signal transmission loss can be effectively reduced, space and a base are provided for connection of the pins 102, and the first signal transmission port 201a in the middle provides a port directly connected with the pins 102 for receiving and transmitting signals.
As shown in fig. 2, the first dielectric layer 201 in this embodiment is rectangular, and the first signal transmission port 201a is located in the middle of the first dielectric layer 201, and the surface of the first dielectric layer 201 is coated with copper, which has good electrical characteristics.
In fig. 2, a copper sheet interface 201b is disposed in the middle of the first dielectric layer 201, the copper sheet interface 201b is connected with the pins 102, and the first signal transmission port 201a is disposed in the middle of the copper sheet interface 201 b; in this embodiment, a circular hole is formed in the middle of the first dielectric layer 201, and the copper sheet interface 201b is circular and is disposed in the first dielectric layer 201, or may be in other shapes such as a polygon.
As shown in fig. 1 and fig. 3, the metal layer further includes a second dielectric layer 203 disposed away from the transceiver chip 100 and parallel to the first dielectric layer 201, a second signal transmission port 203a is disposed in the middle of the second dielectric layer 203, and the first signal transmission port 201a and the second signal transmission port 203a together form two ends of the signal transmission channel 204. The second dielectric layer 203 is also made of copper-clad material, and has good electrical properties. The second dielectric layer 203 may also be considered as a ground line for reducing disturbances in the signal transmission.
As shown in fig. 1, a metal signal transmission hole 202a opposite to the first signal transmission port 201a and the second signal transmission port 203a is provided on a dielectric substrate 202 between a first dielectric layer 201 and a second dielectric layer 203, and the metal signal transmission hole 202a penetrates through two ends of the dielectric substrate 202 to form the signal transmission channel 204 together with the first signal transmission port 201a and the second signal transmission port 203 a. The dielectric substrate 202 may be made of RF4 material with a relative permittivity of 4.3, a loss tangent angle of 0.025, and a substrate thickness of 0.4mm. The medium is essentially itself non-conductive.
The signal transmission channel 204 is similar to a coaxial line in an antenna, and is used as a feeder line for signal transmission, and the signal transmission channel 204 is integrated in the substrate structure 200, so that the substrate structure 200 can be used as a carrier for waveguide transmission, and can be structurally used as a connecting piece between a chip and the waveguide 300, thereby improving the overall structural compactness of the switching structure, reducing the complexity of the system and reducing unnecessary radiation interference. While reducing link loss. The cross-coupling between channels is also reduced because the signal does not need to be introduced into the waveguide 300 via a semi-open microstrip line.
Referring to fig. 1 to 3, in this embodiment, the aperture of the metal signal transmission hole 202a is identical to that of the first signal transmission port 201a and is concentrically arranged with the first signal transmission port; the second dielectric layer 203 is provided with a metal connection piece 203b, the second signal transmission port 203a is arranged in the middle of the metal connection piece 203b, and the second signal transmission port 203a is concentrically arranged with the metal signal transmission hole 202a and the first signal transmission port 201a and has the same aperture. Since the signal transmission channel 204 is equivalent to a coaxial line, the coaxial line structure can be formed by setting the apertures of the first signal transmission port 201a, the second signal transmission port 203a, and the metal signal transmission hole 202a to be the same.
As shown in fig. 2, the diameter of the copper tab interface 201b is 3.2mm and the circumferentially open circular groove of the copper tab interface 201b is 5.1mm in diameter.
As shown in fig. 3, a rectangular opening 203c is formed in the second dielectric layer 203, the metal connection piece 203b is in a convex step shape, the metal connection piece 203b extends from the inner side wall of one side of the second dielectric layer 203 to the inner center, and the metal connection piece 203b can be equivalently a ridge waveguide. The metal patch 203b positions the second signal transmission port 203a directly opposite the center of the waveguide cavity 301.
As shown in fig. 4, the rectangular metal groove at the bottom of the second dielectric layer 203 has a length of 2.6mm and a width of 0.8mm, and the step size of the side wall of the metal groove is as follows: the large rectangular structure is 1.7mm long and 0.25mm wide. The small rectangular structure is 0.32mm long and 0.31mm wide.
Alternatively, the metal connection piece 203b may be formed in a stepped shape, and the position of the second signal transmission port 203a may correspond to the metal information transmission hole.
Since waveguide transmission requires a waveguide that is adapted to the shape of the waveguide 300, an array of metallized through holes 205 is also provided on the substrate structure 200 that matches the shape of the waveguide cavity 301 of the waveguide 300. The metallized via arrays 205 extend through both ends of the substrate structure 200, so that the metallized dielectric substrate 202 at both ends is electrically connected. The metallized through hole array 205 can limit the electromagnetic wave in the range from diffusing transversely, and the area formed by surrounding the metallized through hole array 205 and the first metal dielectric substrate 202 and the second metal dielectric substrate 202 together form an equivalent electromagnetic resonant cavity. To improve resonance efficiency, the distance between adjacent metallized vias is no more than half the wavelength of the medium.
The rectangular structure surrounded by the metallized via array 205 on the first dielectric layer 201 is 2.8mm long and 1mm wide.
Specifically, as shown in fig. 4, the waveguide 300 in this embodiment is a rectangular waveguide, the length of the waveguide is 2.6mm, the width of the waveguide is 0.8mm, the waveguide cavity 301 is a rectangular through hole, the metallized through hole array 205 is distributed on the substrate structure 200 along a rectangle, and a rectangular opening 203c matching the shape of the waveguide cavity 301 is formed in the middle of the second dielectric layer 203.
With the above size switching device, fig. 5 is a graph of reflection coefficient and transmission coefficient characteristics of a signal, wherein broken lines S1,1 represent reflection coefficients, solid lines S2,1 represent transmission coefficients, x-axis represents input signal frequency (unit: GHz), and y-axis represents values (unit: dB) of reflection coefficient and transmission coefficient of a signal at an input port of an antenna. As can be seen from fig. 5, the return loss is lower than-15 dB at the millimeter wave 76-81GHz frequency. The insertion loss has no obvious fluctuation, which indicates that the signal transmission in the switching device is stable, and the higher constant-amplitude conversion efficiency is realized in the millimeter wave frequency band.
In this embodiment, the sizes of the components in the substrate structure and the arrangement of the metallized through hole array are all calculated by computer software with the return loss and the access loss of the switching device applied in the millimeter wave antenna waveguide scene as targets (i.e. targets for achieving the signal transmission effect shown in fig. 5), and the calculated corresponding size arrangement mode results.
As shown in fig. 1, a connection layer 400 is further disposed between the substrate structure 200 and the chip body 101, and the connection layer 400 is welded or glued. Specifically, the connection layer 400 between the second dielectric layer 203 and the waveguide 300 in this embodiment is connected by SMT or adhesive.
Fig. 6 is a schematic diagram showing the overall structure of a chip-to-waveguide switching device for a ring waveguide according to a second embodiment of the present invention. The difference from the first embodiment is that the waveguide 300 in this embodiment is an annular waveguide, the waveguide cavity 301 is correspondingly a circular through hole, the metallized through hole array 205 is distributed on the substrate structure 200 along an annular shape, an annular opening 203d matching the shape of the waveguide cavity 301 is formed in the middle of the second dielectric layer 203, and a strip-shaped metal connection piece 203b is disposed in the annular opening 203d of the second dielectric layer 203, which is equivalent to a ridge waveguide. The annular metallized through hole array 205, the first dielectric layer 201 and the second dielectric layer 203 form a closed equivalent electromagnetic resonant cavity.
It is to be understood that, based on the several embodiments provided in the present invention, those skilled in the art may combine, split, reorganize, etc. the embodiments of the present invention to obtain other embodiments, which all do not exceed the protection scope of the present invention.
The foregoing detailed description of the invention has been presented for purposes of illustration and description, and it should be understood that the foregoing is by way of illustration and description only, and is not intended to limit the scope of the invention.
Claims (10)
1. A chip-to-waveguide switching device, comprising:
a transceiver chip (100);
a waveguide (300) located on one side of the transceiver chip (100);
a substrate structure (200) located between the transceiver chip (100) and the waveguide (300); the substrate structure (200) comprises at least two metal layers which are oppositely arranged, and a dielectric substrate (202) positioned between the at least two metal layers, wherein the metal layers facing the transceiver chip are connected with pins (102) of the transceiver chip (100), and the metal layers facing the waveguide tube (300) are connected with the waveguide tube (300);
the substrate structure (200) is provided with signal transmission channels (204) penetrating through all the metal layers and the dielectric substrate (202), and the waveguide tube (300) is provided with waveguide cavities (301) corresponding to the positions of the signal transmission channels (204).
2. The chip-to-waveguide switching device according to claim 1, wherein one of the at least two metal layers comprises a first dielectric layer (102) disposed proximate to the transceiver chip (100), the first dielectric layer (102) being connected to the pins (102), a surface of the first dielectric layer (201) being copper clad;
the signal transmission channel (204) includes a first signal transmission port (201 a) formed on the first dielectric layer (201).
3. The chip-to-waveguide switching device according to claim 2, wherein the other of the at least two metal layers comprises a second dielectric layer (203) disposed adjacent to the waveguide (300), the second dielectric layer (203) being connected to the waveguide (300), a surface of the second dielectric layer (203) being copper-clad;
the signal transmission channel (204) comprises a second signal transmission port (203 a) formed on the second dielectric layer (203), and the first signal transmission port (201 a) and the second signal transmission port (203 a) jointly form two ends of the signal transmission channel (204).
4. A chip-to-waveguide switching device according to claim 3, characterized in that the second dielectric layer (203) is arranged parallel to the first dielectric layer (201) and the first signal transmission port (201 a) is located in the center of the first dielectric layer (201), and the second signal transmission port (203 a) is located in the center of the second dielectric layer (203).
5. A chip-to-waveguide switching device according to claim 3, wherein the signal transmission channel (204) comprises a metal signal transmission hole (202 a) formed on the dielectric substrate (202), and two ends of the metal signal transmission hole (202 a) are disposed opposite to the first signal transmission port (201 a) and the second signal transmission port (203 a), respectively.
6. The chip-to-waveguide switching device according to claim 5, wherein a copper sheet interface (201 b) is provided in the middle of the first dielectric layer (201), the copper sheet interface (201 b) is connected to the pin (102), and the first signal transmission port (201 a) is provided in the middle of the copper sheet interface (201 b); the aperture of the metal signal transmission hole (202 a) is consistent with that of the first signal transmission hole (201 a) and is concentrically arranged with the first signal transmission hole;
the second medium layer (203) is provided with a metal connection sheet (203 b), the metal connection sheet (203 b) is connected with the waveguide tube (300), the second signal transmission port (203 a) is formed in the middle of the metal connection sheet (203 b), and the second signal transmission port (203 a) is concentrically provided with the metal signal transmission hole (202 a) and the first signal transmission port (201 a) and has the same aperture.
7. The chip-to-waveguide switching device according to claim 6, wherein the second dielectric layer (203) is hollow, the metal connection piece (203 b) is convex stepped or square stepped, and the metal connection piece (203 b) extends from one side inner side wall of the second dielectric layer (203) to the inner center.
8. The chip-to-waveguide switching device according to any of claims 5-7, wherein the substrate structure (200) is further provided with an array of metallized vias (205) extending through all of the metal layers and the dielectric substrate (202), the array of metallized vias (205) being shaped to match the shape of the waveguide cavity (301) and being distributed along the outside of the waveguide cavity (301).
9. The chip-to-waveguide switching device according to claim 8, wherein the waveguide (300) is a rectangular waveguide, the waveguide cavity (301) is a rectangular through hole, the metallized through hole array (205) is distributed along a rectangle on the substrate structure (200), and a rectangular opening (203 c) matching the shape of the waveguide cavity (301) is formed in the middle of the second dielectric layer (203).
10. The chip-to-waveguide switching device according to claim 8, wherein the waveguide (300) is an annular waveguide, the waveguide cavity (301) is a circular through hole, the metallized through hole array (205) is distributed along the annular shape on the substrate structure (200), and an annular opening (203 d) matching the shape of the waveguide cavity (301) is formed in the middle of the second dielectric layer (203).
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| CN202310146371.XA CN116190959A (en) | 2023-02-21 | 2023-02-21 | Chip-to-waveguide switching device |
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| CN202310146371.XA CN116190959A (en) | 2023-02-21 | 2023-02-21 | Chip-to-waveguide switching device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118040274A (en) * | 2024-03-11 | 2024-05-14 | 睿思微系统(烟台)有限公司 | Interconnection device and wireless communication device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118040274A (en) * | 2024-03-11 | 2024-05-14 | 睿思微系统(烟台)有限公司 | Interconnection device and wireless communication device |
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