CN116190520A - LED epitaxial wafer for improving wavelength yield, preparation method thereof and LED chip - Google Patents
LED epitaxial wafer for improving wavelength yield, preparation method thereof and LED chip Download PDFInfo
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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Abstract
The invention provides an LED epitaxial wafer for improving wavelength yield, a preparation method thereof and an LED chip, wherein the method comprises the following steps: obtaining a substrate; sequentially growing a composite buffer layer, an undoped GaN layer, an N-type doped GaN layer, a multi-quantum well layer, an electron blocking layer, a P-type doped GaN layer and a P-type GaN contact layer on a substrate; wherein, the method for growing the composite buffer layer comprises the following steps: growth of Ga on a substrate 2 O 3 A sub-layer; for Ga 2 O 3 Annealing the sub-layer; ga after annealing treatment 2 O 3 Growth of periodically alternating cycling Ga on sublayers 2 O 3 The GaN sub-layer is used to form a composite buffer layer. The application is realized by using Ga 2 O 3 Sub-layerGa 2 O 3 The GaN sub-layers are circularly and alternately formed into a composite buffer layer so as to improve the warping of the epitaxial wafer and the wavelength uniformity of the epitaxial wafer.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an LED epitaxial wafer for improving wavelength yield, a preparation method thereof and an LED chip.
Background
In recent years, LED (Light Emitting Diode) industry is highly competitive, and cost becomes one of the core competence of enterprises. To reduce the cost, each LED enterprise is changed from an early 2-inch epitaxy to 4-inch mass production, and is changed from a 4-inch epitaxy to a 6-inch epitaxy. As the size increases, the wavelength uniformity and stability of the LED become poor, resulting in a lower wavelength yield of the LED.
In epitaxial growth, there are stress caused by lattice mismatch and thermal stress generated by thermal mismatch between the thin film and the substrate, and the stress and the thermal stress compete with each other, so that the substrate and the thin film generate dishing or convex warping In the epitaxial growth process, and when a quantum well is grown, the concave-convex variation amplitude influences the temperature distribution of the substrate, and the incorporation of In is influenced, so that the wavelength is influenced, namely, the uneven distribution of the temperature causes uneven distribution of the wavelength. When the amplitude of the convexity is larger, the center temperature of the substrate is lower than the edge temperature; when the concave amplitude is larger, the contact distance between the center position of the substrate and the graphite disc is closer, the distance between the edge of the substrate and the graphite disc is farther, the temperature of the center position is higher than that of the edge of the substrate, the gradient of the temperature distribution caused by the concave-convex change can cause large wavelength distribution difference of different positions on the same epitaxial wafer, and therefore the improvement of the warpage change has an obvious effect on improving the wavelength yield.
In the prior art, low-temperature GaN or AlGaN is generally grown in MOCVD as a buffer layer, and the growth method is favorable for adjusting warping and has good wavelength uniformity, but the obtained epitaxial layer crystal has low quality. In recent years, a layer of AlN film is sputtered on a sapphire substrate before epitaxial growth by utilizing a magnetron sputtering technology as a buffer layer, when the PVD is used for sputtering the AlN film as the buffer layer, the lattice constant of AlN is closer to that of GaN, the lattice mismatch is 2.4%, the defect density of the AlN buffer layer is reduced, the crystal quality of a GaN epitaxial layer can be improved, and the product performance is improved. But PVD sputtered AlN films act as buffer layers with a significant impact on warpage in epitaxial growth and the thermal mismatch between AlN and sapphire is greater than that between GaN and sapphire, resulting in relatively difficult warpage adjustment.
Disclosure of Invention
Based on the above, the invention provides an LED epitaxial wafer for improving the wavelength yield, a preparation method thereof and an LED chip, and aims to improve the warping of the epitaxial wafer and the wavelength uniformity of the epitaxial wafer.
The invention provides a preparation method of an LED epitaxial wafer for improving the wavelength yield, which comprises the following steps:
obtaining a substrate;
sequentially growing a composite buffer layer, an undoped GaN layer, an N-type doped GaN layer, a multiple quantum well layer, an electron blocking layer, a P-type doped GaN layer and a P-type GaN contact layer on the substrate;
wherein, the method for growing the composite buffer layer comprises the following steps:
growth of Ga on the substrate 2 O 3 A sub-layer;
for the Ga 2 O 3 Annealing the sub-layer;
ga after annealing treatment 2 O 3 Growth of periodically alternating cycling Ga on sublayers 2 O 3 A GaN sub-layer to form the composite buffer layer.
According to the preparation method of the LED epitaxial wafer for improving the wavelength yield, the LED epitaxial wafer is prepared from Ga 2 O 3 Sublayers and Ga 2 O 3 The GaN sub-layers are circularly and alternately formed into a composite buffer layer so as to improve the warping of the epitaxial wafer and the wavelength uniformity of the epitaxial wafer; specifically, ga 2 O 3 The GaN epitaxial layer has a large forbidden bandwidth (4.9 eV), can block a large number of dislocation, reduce the extension of epitaxial defects, and improve the crystal quality of the GaN epitaxial layer. And Ga 2 O 3 Lattice mismatch with GaN is very small, ga 2 O 3 The lattice mismatch degree between GaN and GaN is 2.6%, so that stress generated by lattice mismatch can be reduced, film warpage is reduced, and Ga is reduced 2 O 3 The thermal mismatch with sapphire is smaller than the thermal mismatch between AlN or GaN and sapphire,the method is favorable for adjusting the warpage, so that the wavelength uniformity of the epitaxial wafer can be improved, and the wavelength yield is improved.
In addition, the preparation method of the LED epitaxial wafer for improving the wavelength yield can also have the following additional technical characteristics:
further, growing Ga on the substrate 2 O 3 The sub-layer steps are as follows:
the Ga 2 O 3 The growth temperature of the sub-layer is 700-800 ℃, the growth pressure is 50Torr-200Torr, the growth thickness is 20 nm-30 nm, and O is introduced 2 The flow rate is 100sccm to 300sccm.
Further, in the case of the Ga 2 O 3 The annealing treatment of the sub-layer comprises the following steps:
the annealing treatment temperature is 1100-1200 ℃.
Further, at N 2 For Ga under atmosphere 2 O 3 And annealing the sub-layer for 10-20 min.
Further, ga is periodically and alternately circulated 2 O 3 The growth temperature of the GaN sub-layer is 800-900 ℃, the growth pressure is 100Torr-300Torr, and the total thickness is 200 nm-300 nm.
Further, in Ga 2 O 3 In a single cycle of cyclically alternating GaN sublayers:
Ga 2 O 3 the single layer thickness of the layer is 1-nm nm, the single layer thickness of the GaN layer is 10-nm nm, and Ga is grown 2 O 3 O introduced into the layer 2 The flow rate is 50 sccm-100 sccm.
Further, ga after annealing treatment 2 O 3 Growth of periodically alternating cycling Ga on sublayers 2 O 3 After the step of/GaN sublayer, the method further comprises:
stop of charging O 2 Pumping the cavity pressure to vacuum and maintaining for 2-10 min, then raising the cavity pressure to 100-200 torr, raising the temperature to 1000-1100 deg.C, and maintaining the pressure in N 2 And NH 3 For Ga under atmosphere 2 O 3 And (5) annealing the GaN circularly alternating layers for 5-10 min.
Further toGround, ga 2 O 3 The number of the cyclic growth periods of the GaN sub-layer is 10-20.
The application provides an LED epitaxial wafer for improving the wavelength yield, wherein the LED epitaxial wafer for improving the wavelength yield is prepared according to the preparation method of the LED epitaxial wafer for improving the wavelength yield.
The application also provides an LED chip, which comprises the LED epitaxial wafer for improving the wavelength yield.
Drawings
Fig. 1 is a schematic structural diagram of an LED epitaxial wafer for improving the wavelength yield of the present invention;
FIG. 2 is a schematic diagram of a composite buffer layer according to the present invention;
the invention will be further described in the following detailed description in conjunction with the above-described figures.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Several embodiments of the invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
In order to improve warping of an epitaxial wafer and wavelength uniformity of the epitaxial wafer, the application provides a composite buffer layer, an LED epitaxial wafer with improved wavelength yield, a preparation method of the LED epitaxial wafer and an LED chip, and the LED epitaxial wafer is prepared from Ga 2 O 3 Sublayers and Ga 2 O 3 The GaN sub-layers are circularly and alternately formed into a composite buffer layer so as to improve the warping of the epitaxial wafer and the wavelength uniformity of the epitaxial wafer; specifically, ga 2 O 3 The GaN epitaxial layer has a large forbidden bandwidth (4.9 eV), can block a large number of dislocation, reduce the extension of epitaxial defects, and improve the crystal quality of the GaN epitaxial layer. And Ga 2 O 3 Lattice mismatch with GaN is very small, ga 2 O 3 The lattice mismatch degree between GaN and GaN is 2.6%, so that stress generated by lattice mismatch can be reduced, film warpage is reduced, and Ga is reduced 2 O 3 The thermal mismatch between the epitaxial wafer and the sapphire is smaller than the thermal mismatch between AlN or GaN and the sapphire, and the warping adjustment is facilitated, so that the wavelength uniformity of the epitaxial wafer can be improved, and the wavelength yield is improved.
Specifically, the composite buffer layer comprises Ga 2 O 3 Sublayers are periodically and alternately laminated on the Ga 2 O 3 Ga on sublayer 2 O 3 A GaN sub-layer; wherein the Ga 2 O 3 The total thickness of the GaN sub-layer is 200 nm-300 nm; in Ga 2 O 3 Ga in a single cycle of cyclically alternating GaN sublayers 2 O 3 The single-layer thickness of the GaN layer is 1-nm nm, and the single-layer thickness of the GaN layer is 10-nm nm.
Correspondingly, another aspect of the present application further provides an LED epitaxial wafer for improving the wavelength yield, which includes a substrate, a composite buffer layer, an undoped GaN layer, an N-type doped GaN layer, a multiple quantum well layer, an electron blocking layer, a P-type doped GaN layer and a P-type GaN contact layer sequentially stacked on the substrate, where the composite buffer layer adopts the above-mentioned material including Ga 2 O 3 Sublayers are periodically and alternately laminated on the Ga 2 O 3 Ga on sublayer 2 O 3 Composite buffer layer constructed by GaN sub-layer.
Further, the invention also provides a preparation method of the LED epitaxial wafer for improving the wavelength yield, which comprises the following steps of S11-S12:
s11, obtaining a substrate.
Referring to FIG. 1, a substrate 21 is generally provided with (0001) crystal orientation sapphire Al 2 O 3 For the substrate, transfer into MOCVD at H 2 Performing in-situ annealing treatment under atmosphere at 1000-1200deg.C under 150-500 Torr for 5min-10 min。
And S12, sequentially growing a composite buffer layer, an undoped GaN layer, an N-type doped GaN layer, a multiple quantum well layer, an electron blocking layer, a P-type doped GaN layer and a P-type GaN contact layer on the substrate.
After the annealing is completed, a composite buffer layer 22 is grown on the sapphire substrate, and as shown in fig. 2, ga is grown first 2 O 3 Sub-layer 221, then grown cyclically alternating Ga 2 O 3 /GaN sublayer 222. Further, the growth method of the composite buffer layer includes S121-S123:
s121 growth of Ga on a substrate 2 O 3 A sub-layer.
In some alternative embodiments, ga 2 O 3 The growth temperature of the sub-layer is 700-800 ℃, the growth pressure is 50Torr-200Torr, the growth thickness is 20 nm-30 nm, and O is introduced 2 The flow rate is 100sccm to 300sccm.
S122 to Ga 2 O 3 Annealing the sub-layer to obtain annealed Ga 2 O 3 A sub-layer.
In Ga 2 O 3 After the growth of the sub-layer is finished, the temperature is increased to 1100-1200 ℃ and is controlled by N 2 For Ga under atmosphere 2 O 3 And annealing the sub-layer for 10-20 min. Annealing can cause Ga 2 O 3 Recrystallizing, ga 2 O 3 The crystal is changed from a metastable state to a stable state, and the crystal quality is improved.
S123 Ga after annealing treatment 2 O 3 Growth of periodically alternating cycling Ga on sublayers 2 O 3 The GaN sub-layer is used to form a composite buffer layer.
Ga in composite buffer layer 2 O 3 After the annealing treatment of the sub-layer 221 is finished, the annealing treatment is finished by Ga 2 O 3 Ga is grown on the sub-layer 221 in 10-20 cycles and cyclically alternating 2 O 3 GaN sub-layer 222, the growth temperature is 800-900 ℃, the growth pressure is 100Torr-300Torr, the total thickness growth thickness is 200 nm-300 nm, wherein Ga 2 O 3 Ga in single period of GaN cyclic alternating layer 2 O 3 The thickness of the single layer is 1 nm-2 nm, the thickness of the GaN single layer is 10 nm-20nm, and O is introduced 2 The flow rate is 50sccm to 100sccm. Cyclically alternating Ga 2 O 3 After the growth of the/GaN sub-layer 222, the introduction of O is stopped 2 Pumping the cavity pressure to vacuum and maintaining for 2-10 min, then raising the cavity pressure to 100-200 torr, raising the temperature to 1000-1100 deg.C, and maintaining the pressure in N 2 And NH 3 Ga cyclically alternating under atmosphere 2 O 3 The GaN sub-layer 222 is annealed for 5min to 10min.
Ga 2 O 3 GaN cycle alternate growth favoring Ga 2 O 3 The growth is transited to the GaN growth, the lattice mismatch is further reduced, and the O is stopped being introduced after the growth is completed 2 The cavity pressure is pumped to vacuum in order to remove O in the cavity 2 Avoiding the subsequent doping of GaN epitaxial layers with O 2 And can pass through the following N 2 And NH 3 And adjusting the annealing time under the atmosphere to adjust the warping of the epitaxial wafer.
In the present application, through Ga 2 O 3 Sublayers and alternately cycled Ga 2 O 3 The GaN sub-layer forms a composite buffer layer, and the wavelength uniformity of the epitaxial wafer is improved and the wavelength yield is improved through the composite buffer layer. Specifically, ga 2 O 3 The GaN epitaxial layer has a large forbidden bandwidth (4.9 ev), can block a large number of dislocation, reduce the extension of epitaxial defects, and improve the crystal quality of the GaN epitaxial layer. And Ga 2 O 3 Lattice mismatch with GaN is very small, ga 2 O 3 The lattice mismatch degree between GaN and GaN is 2.6%, so that stress generated by lattice mismatch can be reduced, film warpage is reduced, and Ga is reduced 2 O 3 The thermal mismatch between the epitaxial wafer and the sapphire is smaller than the thermal mismatch between AlN or GaN and the sapphire, and the warping adjustment is facilitated, so that the wavelength uniformity of the epitaxial wafer can be improved, and the wavelength yield is improved.
Further, after the annealing of the composite buffer layer is completed, an undoped GaN layer, an N-type doped GaN layer, a multiple quantum well layer, an electron blocking layer, a P-type doped GaN layer and a P-type GaN contact layer are sequentially grown on the composite buffer layer, and the following steps are specifically performed:
after the annealing of the composite buffer layer 22 is completed, the temperature is adjusted to 1000 ℃ to 1100 ℃, and an undoped GaN layer 23 with a thickness of 1.0 to 3.0 micrometers is grown on the composite buffer layer 22 under a growth pressure of 100Torr to 500Torr.
After the undoped GaN layer 23 is grown, a Si-doped N-type doped GaN layer 24 is grown on the undoped GaN layer 23, the thickness is 1.0-3.0 micrometers, the growth temperature is 1100-1200 ℃, the pressure is 100Torr-300Torr, and the Si doping concentration is 10 19 cm -3 -10 20 cm -3 。
After the growth of the N-type doped GaN layer 24 is finished, a multi-quantum well layer 25 is grown on the N-type doped GaN layer 24, wherein the multi-quantum well layer is composed of 5-12 periods of InGaN/GaN, the InGaN is a well layer, and the GaN is a barrier layer. The thickness of a single InGaN well layer in the multi-quantum well layer is 1nm-4nm, the growth temperature is 750-850 ℃, the pressure is 50Torr-200Torr, and the in component is 0.1-0.5; the thickness of the single GaN barrier layer is 8nm-20nm, the growth temperature is 850-950 ℃, and the growth pressure is 50Torr-200Torr.
After the multi-quantum well layer 25 is grown, the AlGaN electron blocking layer is grown at 950-1050 ℃, the growth pressure is 50Torr-100Torr, the growth thickness is 50nm-100nm, and the Al component is 0.1-0.5.
After the electron blocking layer 26 is grown, a P-type doped GaN layer 27 is grown, the thickness is 30nm-200nm, the growth temperature is 900-1050 ℃, the growth pressure interval is 100Torr-600Torr, and the Mg doping concentration is 10 19 cm -3 -10 20 cm -3 。
P-type GaN contact layer 28 is grown on P-type doped GaN layer 27 with thickness of 10nm-50nm, growth temperature range of 900-1050 deg.C, growth pressure range of 100Torr-300Torr, and Mg doping concentration of 10 19 cm -3 -10 20 cm -3 。
Further, after the growth of the P-type GaN contact layer 28 is completed, the epitaxial wafer is grown, the temperature of the reaction chamber is reduced, annealing treatment is performed in a nitrogen atmosphere at a temperature of 650-850 ℃ for 5-15 minutes, and the room-temperature epitaxial growth is completed.
Trimethylaluminum (TMAl), trimethylgallium, or triethylgallium (TMGa or TEGa) as a precursor of the group iii source, ammonia as a precursor of the group v source, silane as a precursor of the N-type dopant, magnesium dicyclopentadiene as a precursor of the P-type dopant, oxygen as a reactive gas, and nitrogen and hydrogen as carrier gases.
In order to facilitate an understanding of the present invention, specific examples of the present invention will be given below. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Example 1
The embodiment provides a preparation method of an LED epitaxial wafer for improving the wavelength yield, which comprises the steps of obtaining a substrate; and sequentially growing a composite buffer layer, an undoped GaN layer, an N-type doped GaN layer, a multiple quantum well layer, an electron blocking layer, a P-type doped GaN layer and a P-type GaN contact layer on the substrate.
Wherein, the method for growing the composite buffer layer comprises the following steps:
growth of Ga on the substrate 2 O 3 A sub-layer;
for the Ga 2 O 3 Annealing the sub-layer to obtain annealed Ga 2 O 3 A sub-layer;
ga after annealing treatment 2 O 3 Growth of periodically alternating cycling Ga on sublayers 2 O 3 A GaN sub-layer to form the composite buffer layer.
As a specific example, ga is being grown 2 O 3 When the sublayer is grown, the thickness is 20nm, and the introduced O 2 The flow rate is 100 sccm; growing Ga 2 O 3 In the case of GaN sublayers, let-in O 2 The flow rate is 50sccm, wherein Ga 2 O 3 The monolayer thickness of the GaN layer was 1nm and the monolayer thickness of the GaN layer was 10 nm.
Example 2
The method for preparing the LED epitaxial wafer for improving the wavelength yield provided in this embodiment is different from embodiment 1 in that:
in this example, ga is grown 2 O 3 When the sublayer is grown, the thickness is 25nm, and the introduced O 2 The flow rate is 200 sccm; growing Ga 2 O 3 When forming/GaN sub-layerO let in 2 The flow rate is 75 sccm, in which Ga 2 O 3 The monolayer thickness of the GaN layer was 2nm and the monolayer thickness of the GaN layer was 15 nm.
Example 3
The method for preparing the LED epitaxial wafer for improving the wavelength yield provided in this embodiment is different from embodiment 1 in that:
in this example, ga is grown 2 O 3 When the sublayer is grown, the thickness is 30nm, and the introduced O 2 The flow rate is 300 sccm; growing Ga 2 O 3 In the case of GaN sublayers, let-in O 2 The flow rate is 100sccm, wherein Ga 2 O 3 The monolayer thickness of the GaN layer was 3nm and the monolayer thickness of the GaN layer was 20nm.
Comparative example 1
The method for preparing the light emitting diode epitaxial wafer provided in the present comparative example is different from that in example 1 in that:
the buffer layer adopts a conventional scheme, namely the buffer layer is an AlGaN layer, in comparative example 1, the growth thickness of the AlGaN layer is 25nm, and O is introduced 2 The flow rate was 0sccm.
Comparative example 2
The method for preparing the light emitting diode epitaxial wafer provided in the present comparative example is different from that in example 1 in that:
the buffer layer was an AlN layer, which was grown to a thickness of 25nm by PVD in comparative example 2, and was introduced with O 2 The flow rate was 0sccm.
The method can be summarized as follows: the corresponding parameters for examples 1-3 and comparative examples 1-2 are shown in Table 1:
table 1:
further, performance tests were conducted on the light emitting diode fabricated chips prepared in example 1-example 3 and comparative example 1-comparative example 2, respectively, in which the light emitting diodes prepared in example 1-example 3 and comparative example 1-comparative example 2 were fabricated into chips, and wavelength yield and XRD tests were conducted. The specific test results are shown in table 2:
table 2:
with reference to table 1, as can be obtained from table 2, the light emitting diode prepared by the light emitting diode preparation method of the present application has a better wavelength yield and XRD test than those of the comparative example.
In summary, the embodiment of the invention provides the LED epitaxial wafer with improved wavelength yield, the preparation method thereof and the LED chip, wherein the LED epitaxial wafer comprises Ga 2 O 3 Sublayers and Ga 2 O 3 The GaN sub-layers are circularly and alternately formed into a composite buffer layer so as to improve the warping of the epitaxial wafer and the wavelength uniformity of the epitaxial wafer; specifically, ga 2 O 3 The GaN epitaxial layer has a large forbidden bandwidth (4.9 eV), can block a large number of dislocation, reduce the extension of epitaxial defects, and improve the crystal quality of the GaN epitaxial layer. And Ga 2 O 3 Lattice mismatch with GaN is very small, ga 2 O 3 The lattice mismatch degree between GaN and GaN is 2.6%, so that stress generated by lattice mismatch can be reduced, film warpage is reduced, and Ga is reduced 2 O 3 The thermal mismatch between the epitaxial wafer and the sapphire is smaller than the thermal mismatch between AlN or GaN and the sapphire, and the warping adjustment is facilitated, so that the wavelength uniformity of the epitaxial wafer can be improved, and the wavelength yield is improved.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. The preparation method of the LED epitaxial wafer for improving the wavelength yield is characterized by comprising the following steps of:
obtaining a substrate;
sequentially growing a composite buffer layer, an undoped GaN layer, an N-type doped GaN layer, a multiple quantum well layer, an electron blocking layer, a P-type doped GaN layer and a P-type GaN contact layer on the substrate;
wherein, the method for growing the composite buffer layer comprises the following steps:
growth of Ga on the substrate 2 O 3 A sub-layer;
for the Ga 2 O 3 Annealing the sub-layer;
ga after annealing treatment 2 O 3 Growth of periodically alternating cycling Ga on sublayers 2 O 3 A GaN sub-layer to form the composite buffer layer.
2. The method for manufacturing an LED epitaxial wafer with improved wavelength yield according to claim 1, wherein Ga is grown on the substrate 2 O 3 The sub-layer steps are as follows:
the Ga 2 O 3 The growth temperature of the sub-layer is 700-800 ℃, the growth pressure is 50Torr-200Torr, the growth thickness is 20-30 nm, and O is introduced 2 The flow rate is 100sccm to 300sccm.
3. The method for manufacturing an LED epitaxial wafer with improved wavelength yield according to claim 1, wherein the Ga is mixed with 2 O 3 The annealing treatment of the sub-layer comprises the following steps:
the annealing treatment temperature is 1100-1200 ℃.
4. The method for manufacturing an LED epitaxial wafer for improving the wavelength yield according to claim 1 or 3, wherein:
at N 2 For Ga under atmosphere 2 O 3 And annealing the sub-layer for 10-20 min.
5. The method for manufacturing an LED epitaxial wafer with improved wavelength yield according to claim 1, wherein Ga is periodically and alternately circulated 2 O 3 The growth temperature of the GaN sub-layer is 800-900 ℃, the growth pressure is 100Torr-300Torr, and the total thickness is 200 nm-300 nm.
6. The method for manufacturing an LED epitaxial wafer with improved wavelength yield according to claim 1 or 5, wherein the method comprises the steps of 2 O 3 In a single cycle of cyclically alternating GaN sublayers:
Ga 2 O 3 the single layer thickness of the layer is 1-nm nm, the single layer thickness of the GaN layer is 10-nm nm, and Ga is grown 2 O 3 O introduced into the layer 2 The flow rate is 50 sccm-100 sccm.
7. The method for manufacturing an LED epitaxial wafer with improved wavelength yield according to claim 1, wherein Ga after annealing treatment 2 O 3 Growth of periodically alternating cycling Ga on sublayers 2 O 3 After the step of/GaN sublayer, the method further comprises:
stop of charging O 2 Pumping the cavity pressure to vacuum and keeping for 2min-10min, then raising the cavity pressure to 100-200 torr, raising the temperature to 1000-1100 ℃, and maintaining the temperature at N 2 And NH 3 For Ga under atmosphere 2 O 3 And (5) annealing the GaN circularly alternating layers for 5-10 min.
8. The method for manufacturing an LED epitaxial wafer with improved wavelength yield according to claim 1, wherein Ga 2 O 3 The number of the cyclic growth periods of the GaN sub-layer is 10-20.
9. The LED epitaxial wafer for improving the wavelength yield is characterized in that the LED epitaxial wafer for improving the wavelength yield is prepared by the method for preparing the LED epitaxial wafer for improving the wavelength yield according to any one of claims 1-8.
10. An LED chip comprising the LED epitaxial wafer of claim 9 for increasing the wavelength yield.
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