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CN116093093A - Environment and proximity sensor packaging method and sensor - Google Patents

Environment and proximity sensor packaging method and sensor Download PDF

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Publication number
CN116093093A
CN116093093A CN202211477209.8A CN202211477209A CN116093093A CN 116093093 A CN116093093 A CN 116093093A CN 202211477209 A CN202211477209 A CN 202211477209A CN 116093093 A CN116093093 A CN 116093093A
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China
Prior art keywords
functional area
silicon wafer
wafer substrate
proximity sensor
environmental
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Application number
CN202211477209.8A
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Chinese (zh)
Inventor
王邦旭
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Lafley Technology Suzhou Co ltd
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Lafley Technology Suzhou Co ltd
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Priority to CN202211477209.8A priority Critical patent/CN116093093A/en
Publication of CN116093093A publication Critical patent/CN116093093A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

The invention discloses an environment and proximity sensor packaging method and a sensor. Meanwhile, the chip signal is led out by adopting a rewiring process, so that a PCB (printed circuit board) is omitted, and the Z-direction size of a product is greatly reduced; in addition, the whole chip process adopts a wafer-level bonding process, single operation is not needed, and the production efficiency is greatly improved.

Description

Environment and proximity sensor packaging method and sensor
Technical Field
The invention relates to the technical field of chip packaging, in particular to an environment and proximity sensor packaging method and a sensor.
Background
The miniaturization of smart devices is based on the miniaturization of their constituent components. The environment and the proximity sensor are combined with the light sensing chip and the light emitting chip, and the two chips are respectively manufactured by adopting different wafers in the traditional process and are respectively combined on the PCB substrate for packaging, and the packaging mode mainly has the following defects:
1. the light sensing chip, the light emitting chip and the PCB substrate are connected in a Wire Bonding mode, and enough space is needed between the chips for Wire Bonding, so that the development of the sensor in the small-size direction is restricted;
2. the PCB substrate is difficult to thin, so that the thinning development of the sensor is restricted;
3. the photo-sensing chip, the light-emitting chip and the PCB are subjected to die bonding and wire bonding one by one, and the production efficiency is low.
Disclosure of Invention
The invention aims to provide an environment and a proximity sensor packaging method which are small in size, thin in thickness and high in production efficiency.
In order to solve the above problems, the present invention provides an environmental and proximity sensor packaging method, comprising the steps of:
s1, manufacturing a light sensing functional area on the front surface of a silicon wafer substrate and a first metal welding pad for leading out signals of the light sensing functional area;
s2, manufacturing a light-emitting functional area on the front surface of the silicon wafer substrate and a second metal welding pad for leading out signals of the light-emitting functional area;
s3, thinning the back surface of the silicon wafer substrate, and manufacturing a silicon through hole on the silicon wafer substrate;
s4, manufacturing a first insulating layer in the through silicon via and on the back surface of the silicon wafer substrate;
s5, manufacturing a rewiring layer on the first insulating layer, and leading signals of the light sensing functional area and signals of the light emitting functional area to the back surface of the silicon wafer substrate;
s6, manufacturing a second insulating layer on the rewiring layer and exposing the bonding pad opening;
s7, manufacturing transparent resin lenses on the light sensing functional area and the light emitting functional area;
s8, manufacturing an optical sealing cover between the light sensing functional area and the light emitting functional area so as to optically isolate the light sensing functional area from the light emitting functional area;
s9, cutting and grading are carried out, and the light sensing function and the light emitting function are integrated in a single chip.
In one embodiment of the present invention, in step S1, a standard CMOS process is used to fabricate a photo-sensing functional area on the front side of a silicon wafer substrate.
In one embodiment of the present invention, in step S2, a compound semiconductor material is epitaxially grown on the front surface of the silicon wafer substrate using a heteroepitaxy technique to form the light emitting functional region.
In one embodiment of the present invention, the compound semiconductor material is GaAs.
In one embodiment of the present invention, in step S3, a through silicon via is fabricated on the silicon wafer substrate using photolithography and dry etching.
In one embodiment of the present invention, step S3 further comprises: and attaching a supporting adhesive tape to the front surface of the silicon wafer substrate or temporarily bonding a carrier plate to increase the strength of the silicon wafer substrate.
In one embodiment of the present invention, in step S4, a first insulating layer is fabricated in the through silicon via and on the back surface of the silicon wafer substrate by PECVD or spraying of an insulating material.
In one embodiment of the present invention, in step S7, a transparent resin lens is fabricated on the light sensing functional region and the light emitting functional region using an injection molding or dispensing process.
In one embodiment of the present invention, in step S8, an optical cover is formed by an injection molding process, and then the optical cover is bonded to the front surface of the silicon wafer substrate by glue, and the optical cover is located between the light sensing functional area and the light emitting functional area.
The invention also provides an environment and proximity sensor, which is obtained by adopting the packaging method of the environment and proximity sensor.
The invention has the beneficial effects that:
according to the environment and proximity sensor packaging method, the light sensing functional area and the light emitting functional area are respectively manufactured in different areas on the front surface of the silicon wafer substrate, and then wire bonding is carried out, so that the two functions are integrated on one silicon wafer, and the X, Y-direction size of a product is greatly reduced.
Meanwhile, the chip signal is led out by adopting a rewiring process, so that a PCB (printed circuit board) is omitted, and the Z-direction size of a product is greatly reduced;
in addition, the whole chip process adopts a wafer-level bonding process, single operation is not needed, and the production efficiency is greatly improved.
The foregoing description is only an overview of the present invention, and is intended to be implemented in accordance with the teachings of the present invention, as well as the preferred embodiments thereof, together with the following detailed description of the invention, given by way of illustration only, together with the accompanying drawings.
Drawings
FIG. 1 is a schematic diagram of step S1 in an environmental and proximity sensor packaging method in an embodiment of the present invention;
FIG. 2 is a schematic diagram of step S2 in an environmental and proximity sensor packaging method in an embodiment of the present invention;
FIG. 3 is a schematic diagram of step S3 in an environmental and proximity sensor packaging method in an embodiment of the present invention;
FIG. 4 is a schematic diagram of step S4 of the environmental and proximity sensor packaging method in an embodiment of the present invention;
FIG. 5 is a schematic diagram of step S5 in an environmental and proximity sensor packaging method in an embodiment of the present invention;
FIG. 6 is a schematic diagram of step S6 in an environmental and proximity sensor packaging method in an embodiment of the present invention;
FIG. 7 is a schematic diagram of step S7 in an environmental and proximity sensor packaging method in an embodiment of the present invention;
FIG. 8 is a schematic diagram of step S8 in an environmental and proximity sensor packaging method in an embodiment of the present invention;
fig. 9 is a schematic diagram of step S9 in the environmental and proximity sensor packaging method in an embodiment of the present invention.
Marking:
1. a silicon wafer substrate; 2. a light-sensitive functional region; 3. a first metal pad; 4. a light emitting functional region; 5. a second metal pad; 6. a through silicon via; 7. a first insulating layer; 8. a rewiring layer; 9. a second insulating layer; 10. a transparent resin lens; 11. an optical cover.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the invention and practice it.
Example 1
As shown in fig. 1-9, the present embodiment discloses an environmental and proximity sensor packaging method, comprising the steps of:
s1, manufacturing a light sensing functional area 2 on the front surface of a silicon wafer substrate 1 and a first metal welding pad 3 for leading out signals of the light sensing functional area 2; reference is made to fig. 1.
In one embodiment, the photosensitive functional region 2 is fabricated on the front side of the silicon wafer substrate 1 using standard CMOS processes.
S2, manufacturing a light-emitting functional area 4 on the front surface of the silicon wafer substrate 1 and a second metal welding pad 5 for leading out signals of the light-emitting functional area 4; refer to fig. 2.
In one embodiment, the compound semiconductor material is epitaxially grown on the front surface of the silicon wafer substrate 1 by using a heteroepitaxy technique to form the light emitting functional region 4. Alternatively, the compound semiconductor material is GaAs or the like.
S3, thinning the back surface of the silicon wafer substrate 1, and manufacturing a silicon through hole 6 on the silicon wafer substrate 1; refer to fig. 3. Alternatively, the silicon wafer substrate 1 is thinned mechanically using a wafer thinning machine.
In one embodiment, the through silicon vias 6 are fabricated on the silicon wafer substrate 1 using photolithography and dry etching.
Optionally, after the silicon wafer substrate 1 is thinned, step S3 further includes: the strength of the silicon wafer substrate 1 is increased by attaching a supporting tape to the front surface of the silicon wafer substrate 1 or temporarily bonding a carrier plate.
S4, manufacturing a first insulating layer 7 in the through silicon via 6 and on the back surface of the silicon wafer substrate 1; refer to fig. 4.
In one embodiment, a first insulating layer 7 is formed in the through silicon via 6 and on the back surface of the silicon wafer substrate 1 by PECVD or spraying an insulating material, so as to prevent the electrical leakage between the rewiring layer 8 and the silicon wafer substrate 1.
S5, manufacturing a rewiring layer 8 on the first insulating layer 7, and leading signals of the light sensing functional area 2 and signals of the light emitting functional area 4 to the back surface of the silicon wafer substrate 1; refer to fig. 5. Specifically, the rewiring layer 8 is manufactured by a semiconductor general-purpose rewiring process.
S6, manufacturing a second insulating layer 9 on the rewiring layer 8 and exposing a bonding pad opening; refer to fig. 6. The second insulating layer 9 protects the rewiring layer 8.
Specifically, a layer of insulating material is lithographically formed using an organic material (such as PI glue, green oil, etc.) using standard photolithographic processes, and the pad openings are exposed.
S7, manufacturing transparent resin lenses 10 on the light sensing functional area 2 and the light emitting functional area 4; refer to fig. 7.
Alternatively, a transparent resin lens 10 is fabricated on the light sensing functional region 2 and the light emitting functional region 4 using an injection molding or dispensing process for light emission and absorption and device protection.
S8, manufacturing an optical sealing cover 11 between the light sensing functional area 2 and the light emitting functional area 4 so as to optically isolate the light sensing functional area 2 from the light emitting functional area 4; refer to fig. 8. The optical cover 11 can prevent optical crosstalk; on the other hand, the optical cover 11 is slightly higher than the transparent resin lens 10 in height, and can function to protect the transparent resin lens 10.
Specifically, an injection molding process is adopted to form an optical sealing cover 11, and then a wafer-level bonding machine is utilized to bond the optical sealing cover 11 on the front surface of the silicon wafer substrate 1 by using glue, and the optical sealing cover is positioned between the light sensing functional area 2 and the light emitting functional area 4.
S9, cutting and grading are carried out, and the light sensing function and the light emitting function are integrated in a single chip. Refer to fig. 9.
Alternatively, the chips are diced and classified by a mechanical blade or a laser.
According to the environment and proximity sensor packaging method, the light sensing functional area and the light emitting functional area are respectively manufactured in different areas on the front surface of the silicon wafer substrate, and then wire bonding is carried out, so that the two functions are integrated on one silicon wafer, and the X, Y-direction size of a product is greatly reduced.
Meanwhile, the chip signal is led out by adopting a rewiring process, so that a PCB (printed circuit board) is omitted, and the Z-direction size of a product is greatly reduced;
in addition, the whole chip process adopts a wafer-level bonding process, single operation is not needed, and the production efficiency is greatly improved.
Example two
The present embodiment discloses an environmental and proximity sensor, which is packaged by the environmental and proximity sensor packaging method in the first embodiment, and the structure thereof can be referred to fig. 8.
The above embodiments are merely preferred embodiments for fully explaining the present invention, and the scope of the present invention is not limited thereto. Equivalent substitutions and modifications will occur to those skilled in the art based on the present invention, and are intended to be within the scope of the present invention. The protection scope of the invention is subject to the claims.

Claims (10)

1. An environmental and proximity sensor packaging method, comprising the steps of:
s1, manufacturing a light sensing functional area on the front surface of a silicon wafer substrate and a first metal welding pad for leading out signals of the light sensing functional area;
s2, manufacturing a light-emitting functional area on the front surface of the silicon wafer substrate and a second metal welding pad for leading out signals of the light-emitting functional area;
s3, thinning the back surface of the silicon wafer substrate, and manufacturing a silicon through hole on the silicon wafer substrate;
s4, manufacturing a first insulating layer in the through silicon via and on the back surface of the silicon wafer substrate;
s5, manufacturing a rewiring layer on the first insulating layer, and leading signals of the light sensing functional area and signals of the light emitting functional area to the back surface of the silicon wafer substrate;
s6, manufacturing a second insulating layer on the rewiring layer and exposing the bonding pad opening;
s7, manufacturing transparent resin lenses on the light sensing functional area and the light emitting functional area;
s8, manufacturing an optical sealing cover between the light sensing functional area and the light emitting functional area so as to optically isolate the light sensing functional area from the light emitting functional area;
s9, cutting and grading are carried out, and the light sensing function and the light emitting function are integrated in a single chip.
2. The environmental and proximity sensor packaging method of claim 1, wherein in step S1, a light sensing functional region is fabricated on the front side of the silicon wafer substrate using standard CMOS processes.
3. The environmental and proximity sensor packaging method of claim 1, wherein in step S2, a compound semiconductor material is epitaxially grown on the front side of the silicon wafer substrate using a heteroepitaxy technique to form the light emitting functional region.
4. The environmental and proximity sensor packaging method of claim 3, wherein the compound semiconductor material is GaAs.
5. The environmental and proximity sensor packaging method of claim 1, wherein in step S3, a through silicon via is fabricated on the silicon wafer substrate using photolithography and dry etching.
6. The environmental and proximity sensor packaging method of claim 1, wherein step S3 further comprises: and attaching a supporting adhesive tape to the front surface of the silicon wafer substrate or temporarily bonding a carrier plate to increase the strength of the silicon wafer substrate.
7. The environmental and proximity sensor packaging method of claim 1, wherein in step S4, a first insulating layer is formed in the through silicon via and on the back surface of the silicon wafer substrate by PECVD or by insulating material spraying.
8. The method of packaging an environmental and proximity sensor according to claim 1, wherein in step S7, a transparent resin lens is fabricated on the light sensing functional area and the light emitting functional area using an injection molding or dispensing process.
9. The method of packaging an environmental and proximity sensor of claim 1, wherein in step S8, an optical cover is formed by injection molding, and then the optical cover is bonded to the front surface of the silicon wafer substrate with glue, and is located between the light sensing functional area and the light emitting functional area.
10. An environmental and proximity sensor, characterized in that it is packaged by the environmental and proximity sensor packaging method according to any one of claims 1-9.
CN202211477209.8A 2022-11-23 2022-11-23 Environment and proximity sensor packaging method and sensor Pending CN116093093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211477209.8A CN116093093A (en) 2022-11-23 2022-11-23 Environment and proximity sensor packaging method and sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211477209.8A CN116093093A (en) 2022-11-23 2022-11-23 Environment and proximity sensor packaging method and sensor

Publications (1)

Publication Number Publication Date
CN116093093A true CN116093093A (en) 2023-05-09

Family

ID=86199934

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211477209.8A Pending CN116093093A (en) 2022-11-23 2022-11-23 Environment and proximity sensor packaging method and sensor

Country Status (1)

Country Link
CN (1) CN116093093A (en)

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