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CN115867618B - Method for producing ink containing microstructure - Google Patents

Method for producing ink containing microstructure Download PDF

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Publication number
CN115867618B
CN115867618B CN202180046450.2A CN202180046450A CN115867618B CN 115867618 B CN115867618 B CN 115867618B CN 202180046450 A CN202180046450 A CN 202180046450A CN 115867618 B CN115867618 B CN 115867618B
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Prior art keywords
microstructure
defective
microstructures
normal
element structure
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CN115867618A (en
Inventor
姜锺赫
任铉德
郑载勳
赵显敏
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
    • B07C—POSTAL SORTING; SORTING INDIVIDUAL ARTICLES, OR BULK MATERIAL FIT TO BE SORTED PIECE-MEAL, e.g. BY PICKING
    • B07C5/00—Sorting according to a characteristic or feature of the articles or material being sorted, e.g. by control effected by devices which detect or measure such characteristic or feature; Sorting by manually actuated devices, e.g. switches
    • B07C5/04—Sorting according to size
    • B07C5/12—Sorting according to size characterised by the application to particular articles, not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/002—Aligning microparts
    • B81C3/007—Methods for aligning microparts not provided for in groups B81C3/004 - B81C3/005
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0061—Methods for manipulating nanostructures
    • B82B3/0071—Sorting nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/009—Characterizing nanostructures, i.e. measuring and identifying electrical or mechanical constants
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/26—Oils; Viscous liquids; Paints; Inks
    • G01N33/32—Paints; Inks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8809—Adjustment for highlighting flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
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  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
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  • Physics & Mathematics (AREA)
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  • Manufacturing & Machinery (AREA)
  • Medicinal Chemistry (AREA)
  • Food Science & Technology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
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Abstract

The present invention provides a method of manufacturing an ink including a microstructure. The method for producing an ink containing a microstructure includes: a step of preparing a substrate on which a plurality of microstructures including at least one normal microstructure and at least one defective microstructure are formed; a step of dividing a defective region on the substrate, the defective region including a region where the defective microstructure is located; a step of bonding the microstructure positioned in the defective region to form an element structure; a step of separating the plurality of microstructures from the substrate; and a step of separating the normal microstructure and the element structure.

Description

Method for producing ink containing microstructure
Technical Field
The present invention relates to a method for producing an ink containing a microstructure.
Background
With the development of multimedia, the importance of display devices is increasing. Accordingly, various types of display devices such as an organic light emitting display device (Organic Light Emitting Display), a liquid crystal display device (Liquid Crystal Display, LCD), and the like are being used.
The device for displaying an image of the display device includes a display panel such as an organic light emitting display panel or a liquid crystal display panel. Among them, as the light emitting display panel, a light emitting element may be included, and for example, in the case of a light emitting diode (Light Emitting Diode, LED), an Organic Light Emitting Diode (OLED) using an organic substance as a fluorescent substance, an inorganic light emitting diode using an inorganic substance as a fluorescent substance, and the like are included.
Disclosure of Invention
Technical problem
The technical problem to be solved by the present invention is to provide a method for manufacturing an ink with improved quality and quality uniformity of microstructure contained in the ink.
The technical problems of the present invention are not limited to the above-mentioned technical problems, and other technical problems not mentioned can be clearly understood by those skilled in the art through the following description.
Solution method
The method for manufacturing an ink including a microstructure according to an embodiment for solving the above technical problems includes: a step of preparing a substrate on which a plurality of microstructures including at least one normal microstructure and at least one defective microstructure are formed; a step of dividing a defective region on the substrate, the defective region including a region where the defective microstructure is located; a step of bonding the microstructure positioned in the defective region to form an element structure; a step of separating the plurality of microstructures from the substrate; and a step of separating the normal microstructure and the element structure.
The step of dividing the defective region may include: and detecting the defective microstructure.
The step of detecting the poor microstructure may include: a step of irradiating the plurality of microstructures with inspection light; and a step of sensing light emitted from the microstructure due to the inspection light, wherein the defective microstructure can be detected by judging whether or not the light emission characteristic of the microstructure is defective.
The step of detecting the poor microstructure may include: and measuring the appearance of each microstructure, wherein the defective microstructure can be detected based on the measured appearance of the microstructure.
The step of forming the element structure may include: and a step of applying a binding substance to the defective area.
The bonding substance may include a resin, and the step of forming the element structure may further include a step of curing the resin.
The bonding substance may include a low melting point alloy.
The step of separating the plurality of microstructures from the substrate may include: and applying ultrasonic waves to the substrate.
The element structure may be separated from the substrate by the ultrasonic wave applied to the substrate.
The normal microstructures may be individually separated from the substrate, and the defective microstructures may be separated from the substrate in such a manner as to be included in the element structure.
The step of separating the normal microstructure and the element structure may include the step of selectively separating the element structure.
The step of selectively separating the element structure may be performed using a filter including a plurality of opening portions.
The normal microstructure may pass through the filter and the element structure may not pass through the filter.
The maximum length of the normal microstructure may be smaller than the maximum width of the opening.
The element structure may have a width greater than a maximum width of the opening.
In the dividing of the defective region, the defective region may be divided such that a width of the defective region is greater than a maximum width of the opening portion.
Normal microstructures disposed adjacent to the defective microstructures may be included in the defective region.
The width of the element structure may be greater than the maximum length of the normal microstructure.
The microstructure may include: a first semiconductor layer; a second semiconductor layer spaced apart from the first semiconductor layer; and an active layer disposed between the first semiconductor layer and the second semiconductor layer.
After the step of separating the normal microstructure and the element structure, it may further include: mixing the normal microstructure with a solvent.
Specific details of other embodiments are included in the detailed description and the accompanying drawings.
Advantageous effects
The method of manufacturing an ink including a microstructure according to an embodiment selectively removes a poor microstructure before performing a process of mixing the microstructure and a solvent, so that the quality of the microstructure included in the ink can be improved. By forming an element structure larger than the size of a normal microstructure by bonding a plurality of defective microstructures to each other with a bonding substance, the normal microstructure and the defective microstructure can be easily separated. Thus, the defective microstructure can be selectively removed by using the size difference and using the filter.
Effects according to the embodiments are not limited to the above-exemplified matters, and further different effects are included in the present specification.
Drawings
Fig. 1 is a flowchart showing a method of manufacturing an ink including a microstructure according to an embodiment.
Fig. 2 is a plan view showing step S100.
Fig. 3 is a side view illustrating step S100 of fig. 1.
Fig. 4 is a flowchart illustrating an example of S200 of fig. 1 in detail.
Fig. 5 is a side view illustrating step S210 of fig. 4.
Fig. 6 is a plan view illustrating step S220 of fig. 4.
Fig. 7 is a flowchart illustrating an example of S300 of fig. 1 in detail.
Fig. 8 is a side view illustrating step S310 of fig. 7.
Fig. 9 is a plan view illustrating step S320 of fig. 7.
Fig. 10 is a side view illustrating step S400 of fig. 1.
Fig. 11 is a side view illustrating step S500 of fig. 1.
Fig. 12 is a schematic diagram for comparing the relative sizes of the filter and normal microstructure and element structure.
Fig. 13 is a side view illustrating step S600 of fig. 1.
Fig. 14 is a flowchart illustrating another example of S300 of fig. 1.
Detailed Description
The advantages and features of the present invention and the method of achieving them will become apparent by referring to the embodiments described in detail below in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various forms different from each other, which are provided only for complete disclosure of the present invention and to fully inform a person of ordinary skill in the art of the scope of the present invention, which is limited only by the scope of the claims.
An element (Elements) or layer is referred to as being "On" another element or layer, and includes both directly On the other element or intervening layers or other Elements. Similarly, what is referred to as being "under", "Left" and "Right" include both the case of being adjacent to another element or the case of other layers or other elements being interposed. Throughout the specification, like reference numerals refer to like constituent elements.
Although the terms "first," "second," etc. are used to describe various elements, these elements are obviously not limited by these terms. These terms are only used to distinguish one element from another. Therefore, the first component mentioned below may be the second component within the technical idea of the present invention.
Hereinafter, embodiments will be described with reference to the drawings.
Fig. 1 is a flowchart showing a method of manufacturing an ink including a microstructure according to an embodiment.
Referring to fig. 1, a method of manufacturing an ink including a microstructure according to an embodiment may include: a step of preparing a substrate on which a plurality of microstructures are formed (S100), a step of dividing a defective region where the defective microstructures are positioned (S200), a step of bonding the plurality of microstructures positioned in the divided defective region (S300), a step of separating the plurality of microstructures from the substrate (S400), a step of separating a normal microstructure and a defective microstructure (S500), and a step of mixing the normal microstructure and a solvent to perform inking (S600).
The plurality of microstructures formed on the substrate may include defective microstructures and normal microstructures. According to the method of manufacturing ink of the present embodiment, defective microstructures can be detected from among a plurality of microstructures formed on a substrate, and an element structure including the defective microstructures can be formed. The element structure may be formed to be larger than the size of the normal microstructure, so that the defective microstructure is easily removed by using the difference in size between the normal microstructure and the element structure. Thus, the ink can be manufactured using the normal microstructure, so that the quality of the microstructure included in the ink is uniform. Therefore, when the above-described ink manufacturing apparatus is utilized, the product reliability of the apparatus can be improved.
Fig. 2 is a plan view showing step S100. Fig. 3 is a side view illustrating step S100 of fig. 1.
Hereinafter, a process for manufacturing an ink including a microstructure will be described.
First, a substrate on which a plurality of microstructures are formed is prepared (S100 in fig. 1).
Specifically, referring to fig. 1 to 3, a plurality of microstructures 30R, 30D may be formed on a substrate 1000. The substrate 1000 may include a material such as sapphire (Al 2 O 3 ) A substrate and a transparent substrate of glass. However, not limited thereto, and the substrate 1000 may also be formed of a conductive substrate such as GaN, siC, znO, si, gaP and GaAs. Hereinafter, the substrate 1000 is sapphire (Al 2 O 3 ) Of a substrateThe case is illustrated as an example.
A plurality of microstructures 30R and 30D may be formed on the substrate 1000. The plurality of microstructures 30R, 30D may be formed to extend in one direction on one surface of the substrate 1000. The direction may be a direction DR3 perpendicular to a surface of the substrate 1000. The plurality of microstructures 30R, 30D may be arranged spaced apart from each other.
Although not limited thereto, the microstructures 30R, 30D may be light emitting diodes (Light Emitting diode). The microstructures 30R, 30D may be inorganic light emitting diodes having a size of Micro (Micro-meter) to Nano (Nano-meter) units and made of inorganic substances. Hereinafter, the case where the microstructures 30R and 30D are inorganic light emitting diodes will be described as an example.
The microstructures 30R, 30D may include a first semiconductor layer 31, a second semiconductor layer 32, an active layer 36, an electrode layer 37, and an insulating film 38.
The first semiconductor layer 31 may be an n-type semiconductor. As an example, in the case where the microstructures 30R, 30D emit light in the blue wavelength band, the first semiconductor layer 31 may include a material having a chemical formula of Al x Ga y In 1-x-y N (x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x+y is more than or equal to 0 and less than or equal to 1). In an exemplary embodiment, the first semiconductor layer 31 may be n-GaN doped with n-type Si.
The second semiconductor layer 32 may be arranged spaced apart from the first semiconductor layer 31 in one direction, which is the extending direction of the microstructures 30R, 30D. The second semiconductor layer 32 may be a p-type semiconductor. In the case where the microstructures 30R, 30D emit light in the blue or green wavelength band, the second semiconductor layer 32 may include a material having the formula Al x Ga y In 1-x-y N (x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x+y is more than or equal to 0 and less than or equal to 1). In an exemplary embodiment, the second semiconductor layer 32 may be p-GaN doped with p-type Mg.
The active layer 36 is disposed between the first semiconductor layer 31 and the second semiconductor layer 32. The active layer 36 may include a substance having a single quantum well structure or a multiple quantum well structure. The active layer 36 may emit light through the combination of electron-hole pairs according to an electrical signal applied through the first semiconductor layer 31 and the second semiconductor layer 32. As an example, in the case where the active layer 36 emits light of a blue wavelength band, the active layer 36 may include a substance of AlGaN, alGaInN or the like.
The electrode layer 37 may be disposed on the second semiconductor layer 32. The electrode layer 37 may be an ohmic contact electrode. However, not limited thereto, and the electrode layer 37 may also be a Schottky (Schottky) contact electrode.
The insulating film 38 is arranged to surround the side surfaces of the plurality of semiconductor layers 31, 32 and the side surfaces of the electrode layer 37 described above. In an exemplary embodiment, the insulating film 38 may be disposed to surround at least a side surface of the active layer 36, and may extend in a direction in which the microstructures 30R, 30D extend.
The plurality of microstructures 30R, 30D may be formed on the substrate 1000 by Epitaxial growth (epi-axial growth). The substrate 1000 may include a support substrate and a buffer layer disposed on the support substrate, and the plurality of microstructures 30R, 30D may be formed on the buffer layer by crystal growth of a Seed crystal (Seed crystal).
The plurality of microstructures 30R, 30D may include a plurality of normal microstructures 30R and a plurality of defective microstructures 30D.
The normal microstructure 30R may have a shape of a Rod (Rod), wire (Wire), tube (Tube), or the like. In an exemplary embodiment, the normal microstructure 30R may be cylindrical or Rod (Rod) shaped. However, it is not limited thereto, and the shape of the normal microstructure 30R may have various shapes, for example, a polygonal column shape such as a square, a rectangular parallelepiped, a hexagonal prism shape, or a shape extending in one direction and having an outer surface portion inclined, or the like.
In an exemplary embodiment in which the microstructures 30R, 30D are inorganic light emitting diodes having a size of Micro (Micro-meter) to Nano (Nano-meter) units and made of inorganic substances, the length of the normal microstructures 30R may have a range of 1 μm to 10 μm or 2 μm to 6 μm, preferably, may have a range of 3 μm to 5 μm. In addition, the diameter of the normal microstructure 30R may have a range of 30nm to 700 nm. The Aspect ratio (Aspect ratio) of the normal microstructure 30R may be 1.2 to 100.
The defective microstructure 30D may be a microstructure that cannot satisfy a required quality in a process of forming a plurality of microstructures on the substrate 1000 by the epitaxial growth method. For example, the defective microstructure 30D may be formed by mixing of foreign matters or the like in the microstructure forming process.
The defective microstructure 30D may have a different appearance from the normal microstructure 30R. Alternatively, the poor microstructure 30D may not emit light, or the wavelength of the emitted light may have a different wavelength from that of the normal microstructure 30R.
Fig. 4 is a flowchart illustrating an example of S200 of fig. 1 in detail. Fig. 5 is a side view illustrating step S210 of fig. 4. Fig. 6 is a plan view illustrating step S220 of fig. 4.
Referring to fig. 1 and 4, the step of dividing the defective region where the defective microstructure is located (S200) may include the step of detecting the defective microstructure (S210) and the step of dividing the defective region including the region where the detected defective microstructure is located (S220).
Then, defective microstructures are detected. (S210 of FIG. 4)
Specifically, referring to fig. 4 and 5, the step of detecting the defective microstructure 30D may be performed using the gauge 200. The defective microstructure 30D can be detected by checking the appearance characteristics or the light emission characteristics of the plurality of microstructures 30R and 30D formed on the substrate 1000 by the detector 200.
The appearance characteristics of the microstructures 30R, 30D inspected for detecting the defective microstructure 30D may include the length, diameter or shape of the microstructures 30R, 30D in the extending direction, surface roughness, or the like. The measuring instrument 200 may measure the appearance of the plurality of microstructures 30R and 30D formed on the substrate 1000, and may determine that the microstructures 30R and 30D are defective microstructures 30D when the measured appearance of the microstructures 30R and 30D is not included in a preset reference range. For example, when the measured lengths or diameters of the microstructures 30R, 30D in the extending direction are outside the reference range of the preset lengths or diameters, it can be determined that the microstructures 30R, 30D are defective microstructures 30D.
The light emission characteristics of the microstructures 30R, 30D inspected to detect the defective microstructure 30D may include whether the microstructures 30R, 30D emit light, the wavelength or brightness of the emitted light, and the like. In order to detect the light emission characteristics of the microstructures 30R and 30D, the detector 200 may irradiate the inspection light to the plurality of microstructures 30R and 30D, sense the light from the microstructures 30R and 30D that emit light by the inspection light, and measure the light emission characteristics of the microstructures 30R and 30D based on the sensed light. The inspection light may include light having a wavelength band smaller than the light emitted by the microstructures 30R, 30D.
The measuring instrument 200 may measure the light emission characteristics of the plurality of microstructures 30R and 30D formed on the substrate 1000, and may determine that the microstructures 30R and 30D are defective microstructures 30D when the measured light emission characteristics of the microstructures 30R and 30D are not included in a predetermined reference range. For example, when the measured microstructures 30R, 30D emit no light or the emitted light is included outside a reference range of a predetermined wavelength or brightness, it can be determined that the microstructures 30R, 30D are defective microstructures 30D.
Then, defective areas including the areas where the detected defective microstructures are located are divided. (S220 of FIG. 4)
Specifically, referring to fig. 4 and 6, the defective areas MA1, MA2 may include the area where the detected defective microstructure 30D is located. The defective areas MA1, MA2 may be divided to include a plurality of defective microstructures 30D detected. The shape and/or number of the defective areas MA1, MA2 may be different according to the position and/or number of the defective microstructures 30D detected in step S210. The defective areas MA1, MA2 may be divided to include the detected defective microstructures 30D.
The defective areas MA1 and MA2 may be divided into areas larger than an opening OP (see fig. 11) of a filter FT (see fig. 11) described below to filter the element structure FD (see fig. 11) by the filter FT. Therefore, the defective areas MA1, MA2 may also be divided such that the normal microstructures 30R disposed adjacent to the defective microstructures 30D are disposed within the defective areas MA1, MA2. That is, the defective areas MA1 and MA2 may be divided into areas having such a degree that they can be filtered by the filter FT when the normal microstructure 30R is not included as much as possible.
In fig. 6, it is exemplarily shown that the first defective area MA1 and the second defective area MA2 are divided into 3 defective microstructures 30D and 5 normal microstructures 30R are arranged in the first defective area MA1, and 6 defective microstructures 30D and 3 normal microstructures 30R are arranged in the second defective area MA2, but not limited thereto. For example, when the region divided into only 6 defective microstructures 30D has a larger area than the opening OP of the filter FT, the defective region MA1 or MA2 may be divided into only 6 defective microstructures 30D.
Fig. 7 is a flowchart illustrating an example of S300 of fig. 1 in detail. Fig. 8 is a side view illustrating step S310 of fig. 7. Fig. 9 is a plan view illustrating step S320 of fig. 7.
Referring to fig. 1 and 7, the step of bonding the plurality of microstructures positioned at the divided defective areas (S300) may include a step of applying resin to the defective areas (S310) and a step of curing the resin (S320). In this step, the element structure FD can be formed by bonding the plurality of microstructures 30R, 30D positioned in the divided defective areas MA1, MA2.
Next, the resin is applied to the defective area. (S310 of FIG. 7)
Referring to fig. 7 to 9, the step of applying the resin 50 to the defective areas MA1, MA2 may be performed using the application unit 300. The coating unit 300 may include a Dispenser (Dispenser).
The coating unit 300 may coat the resin 50 on the divided defective areas MA1, MA2. The resin 50 applied to the defective areas MA1, MA2 may be applied to the respective defective areas MA1, MA2 so as to entirely cover the microstructures 30R, 30D included in the respective defective areas MA1, MA2. Specifically, the resin 50 coated on the defective areas MA1, MA2 may be coated higher than the lengths of the microstructures 30R, 30D in the extending direction, so that the microstructures 30R, 30D arranged in the defective areas MA1, MA2 may not be exposed by the resin 50. In an exemplary embodiment, the distance from the substrate 1000 to the upper surface of the resin 50 may be greater than the length of the normal microstructure 30R in the extending direction.
The resin 50 may not be coated in the areas other than the defective areas MA1, MA2.
The resin 50 may include silicone, acrylic, epoxy, or a mixture thereof, etc. However, not limited thereto, and the substance (e.g., bonding substance) applied to the defective areas MA1, MA2 is not particularly limited in a range in which the plurality of microstructures 30R, 30D arranged in the defective areas MA1, MA2 can be bonded.
Next, the resin is cured. (S320 of FIG. 7)
By curing the resin 50 coated on the defective areas MA1, MA2, the element structure FD including the plurality of microstructures 30R, 30D arranged in the defective areas MA1, MA2 and the resin 50 can be formed.
The process of curing the resin 50 may be performed using thermal curing or photo curing. In the case where the resin 50 coated in the defective areas MA1, MA2 is subjected to heat curing or light curing, the strength of the resin 50 may be increased so that the plurality of microstructures 30R, 30D arranged in the defective areas MA1, MA2 are effectively fixed by the resin 50. By the process of curing the resin 50, the element structure FD in which the plurality of defective microstructures 30D are fixed and bonded to each other by the resin 50 can be formed. As described above, the element structure FD may also include the normal microstructure 30R disposed adjacent to the defective microstructure 30D.
The size of the element structure FD including the plurality of microstructures 30R, 30D and the resin 50 may be larger than the size of each normal microstructure 30R.
Fig. 10 is a side view illustrating step S400 of fig. 1.
Next, the plurality of microstructures are separated from the substrate. (S400 of FIG. 1)
Specifically, referring to fig. 10, the plurality of microstructures 30R, 30D are separated from the substrate 1000. The process of separating the plurality of microstructures 30R, 30D from the substrate 1000 is not particularly limited as long as it is a method that can be generally performed, such as a physical separation method (Mechanically Lift Off, MLO) or a chemical separation method (CLO). In an exemplary embodiment, the process of separating the plurality of microstructures 30R, 30D may be performed by applying ultrasonic waves to the substrate 1000.
When ultrasonic waves are applied to the substrate 1000, the plurality of microstructures 30R, 30D can be separated from the substrate 1000. The normal microstructures 30R not included in the element structure FD may be individually separated from the substrate 1000. The defective microstructure 30D is included in the element structure FD, so that a plurality of defective microstructures 30D can be separated from the substrate 1000 in a form fixed and bonded by the resin 50. When the plurality of micro structures 30R, 30D are separated from the substrate 1000 by ultrasonic waves, if energy transferred by the ultrasonic waves does not transfer enough energy to enable the separation of the element structure FD from the substrate 1000, a portion of the plurality of element structures FD may not be separated from the substrate 1000.
The individual normal microstructures 30R separated from the substrate 1000 may include a first normal microstructure 30R1 and a second normal microstructure 30R2. The first normal microstructure 30R1 has substantially the same structure and shape as the above-described normal microstructure 30R, and therefore the explanation of the first normal microstructure 30R1 is replaced with that of the normal microstructure 30R.
The resin 50 may be disposed on a portion of the outer surface of the second normal microstructure 30R2. The second normal microstructure 30R2 may be formed when the resin 50 is also coated on a portion of the second normal microstructure 30R2 disposed adjacent to the defective areas MA1, MA2 in the process of coating the resin 50 on the defective areas MA1, MA2.
Fig. 11 is a side view illustrating step S500 of fig. 1. Fig. 12 is a schematic diagram for comparing the relative sizes of the filter and normal microstructure and element structure.
Then, the normal microstructure and the defective microstructure are separated. (S500 of FIG. 1)
Specifically, referring to fig. 1, 11 and 12, the step of separating the normal microstructure 30R and the defective microstructure 30D may be performed by selectively separating the element structure FD. The process of selectively separating the element structure FD may be performed using a filter FT including a plurality of opening portions OP.
As described above, the size of the element structure FD may be different from the size of the normal microstructure 30R. Specifically, the size of the element structure FD may be larger than that of the normal microstructure 30R. Therefore, the defective microstructure 30D and the normal microstructure 30R can be separated from each other by utilizing the fact that the size of the element structure FD including the defective microstructure 30D is different from the size of the normal microstructure 30R.
The element structure FD and the normal microstructure 30R may be separated from each other by a filter FT including a plurality of openings OP having a size smaller than the size of the element structure FD and larger than the size of the normal microstructure 30R. Specifically, since the size of the plurality of opening portions OP is smaller than the size of the element structure FD, the element structure FD may not pass through the filter FT but be filtered by the filter FT. Since the size of the plurality of opening portions OP is larger than that of the normal microstructure 30R, the normal microstructure 30R can pass through the filter FT.
The length h1 of the normal microstructure 30R extending in one direction in the extending direction may be the maximum length h1 of the normal microstructure 30R. The maximum length h1 of the normal microstructure 30R may be smaller than the maximum width W22 of the opening OP of the filter FT. However, not limited thereto, and the maximum length h1 of the normal microstructure 30R may be smaller than the minimum width W21 of the opening OP of the filter FT. Thus, the normal microstructure 30R can pass through the filter FT.
The width W1 of the element structure FD may be greater than the maximum length h1 of the normal microstructure 30R. The width W1 of the element structure FD may be larger than the maximum width W22 and the minimum width W21 of the opening OP of the filter FT. Therefore, the element structure FD may not pass through the opening OP of the filter FT.
On the other hand, the size of the element structure FD may be adjusted according to the size of the defective areas MA1, MA2 and the amount of the resin 50 applied to the defective areas MA1, MA2. Therefore, when the element structure FD is to be separated from the normal microstructure 30R by the filter FT, the size of the defective areas MA1, MA2 divided in step S220 of dividing the defective areas MA1, MA2 in fig. 4 and 6 needs to be set larger than the size of the opening OP of the filter FT. Therefore, in step S220, the defective areas MA1, MA2 may be divided such that the widths of the defective areas MA1, MA2 are larger than the maximum width W22 of the opening OP of the filter FT. In this case, the defective areas MA1, MA2 may also be divided to include not only the defective microstructure 30D but also the normal microstructure 30R.
Since the resin 50 coated on the defective areas MA1, MA2 is coated to entirely cover the plurality of micro structures 30R, 30D arranged in the defective areas MA1, MA2, the element structure FD may be formed to have a height greater than the maximum length h1 of the normal micro structure 30R. Therefore, by adjusting the size of the element structure FD according to the size of the defective areas MA1, MA2 and the amount of the resin 50 applied to the defective areas MA1, MA2, the size of the optimum element structure FD capable of separating the element structure FD from the normal microstructure 30R can be designed according to the size of the opening OP of the filter FT. However, even in this case, the defective areas MA1, MA2 may be divided such that the number of normal microstructures 30R included in the defective areas MA1, MA2 is minimized, thereby minimizing the number of lost normal microstructures 30R.
Fig. 13 is a side view illustrating step S600 of fig. 1.
Next, the normal microstructure and the solvent are mixed. (S600 of FIG. 1)
Referring to fig. 13, the normal microstructure 30R and the solvent SV passing through the filter FT may be mixed. The first and second normal microstructures 30R1 and 30R2 may pass through the filter FT, and the element structure FD including the defective microstructure 30D may be filtered without passing through the filter FT. When the ink is manufactured by mixing the plurality of normal microstructures 30R passing through the filter FT and the solvent SV, since the poor microstructures 30D are filtered by the filter FT, the quality of the plurality of normal microstructures 30R dispersed in the solvent SV can be improved.
The solvent SV may be a substance that is gasified or volatilized at ordinary temperature or by heat. Although not limited thereto, the solvent SV may include acetone, water, alcohol, toluene, propylene Glycol (PG), TGBE (triethylene glycol monobutyl ether), DGPE (diethylene glycol monophenyl ether), amide compounds, dicarbonyl compounds, tricarbonyl compounds, phthalate compounds (butyl benzyl phthalate, di (2-ethylhexyl) isophthalate, ethyl (ethyl glycolate) phthalate), or Propylene glycol methyl acetate (Propylene glycol methyl acetate, PGMA), and the like.
According to the method of manufacturing the ink of the present embodiment, it is possible to detect the defective microstructure 30D and selectively separate the defective microstructure 30D before performing the process of mixing the solvent SV and the microstructures 30R, 30D. The above-described method of selectively separating the defective microstructure 30D can easily separate the defective microstructure 30D by forming the element structure FD that is larger than the size of the normal microstructure 30R and includes the defective microstructure 30D. By separating the defective microstructure 30D in advance before performing the process of mixing the solvent SV and the microstructures 30R, 30D, the quality of the microstructures contained in the ink can be improved. Therefore, when a device is manufactured using ink including the microstructure described above, the quality of the device can be improved.
Fig. 14 is a flowchart illustrating another example of S300 of fig. 1.
Referring to fig. 1, 8 and 14, the step of bonding the plurality of microstructures positioned at the divided defective areas (S300) may include a step of applying a low melting point alloy to the defective areas (s310_1).
In order to bond the plurality of microstructures 30D, 30R arranged in the defective areas MA1, MA2, the substance applied to the defective areas MA1, MA2 is not particularly limited as long as the microstructures 30D, 30R are fixed to be bonded to each other at normal temperature. Therefore, when the substance applied to the defective areas MA1, MA2 includes the low-melting-point alloy, the low-melting-point alloy applied to the defective areas MA1, MA2 in a liquid state can be solidified at normal temperature, so that the plurality of micro-structures 30D, 30R arranged in the defective areas MA1, MA2 can be fixed. Therefore, the plurality of defective microstructures 30D can form the element structure FD larger than the normal microstructure 30R, so that the defective microstructures 30D and the normal microstructure 30R can be easily separated.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but it will be understood by those skilled in the art that the present invention can be embodied in other specific forms without changing the technical spirit or essential features thereof. Accordingly, it should be understood that the above-described embodiments are illustrative in all respects, rather than restrictive.

Claims (20)

1. A method of manufacturing an ink containing a microstructure, comprising:
a step of preparing a substrate on which a plurality of microstructures including at least one normal microstructure and at least one defective microstructure are formed;
a step of dividing a defective region on the substrate, the defective region including a region where the defective microstructure is located;
a step of bonding the microstructure positioned in the defective region to form an element structure;
a step of separating the plurality of microstructures from the substrate; and
and separating the normal microstructure from the element structure.
2. The method for manufacturing an ink containing a microstructure according to claim 1, wherein the step of dividing the defective region includes:
and detecting the defective microstructure.
3. The method of manufacturing an ink containing a microstructure according to claim 2, wherein the step of detecting the defective microstructure includes:
a step of irradiating the plurality of microstructures with inspection light; and
a step of sensing light emitted from the microstructure due to the inspection light,
wherein the defective microstructure is detected by determining whether or not the light emission characteristic of the microstructure is defective.
4. The method of manufacturing an ink containing a microstructure according to claim 2, wherein the step of detecting the defective microstructure includes:
a step of measuring the appearance of each of the microstructures,
wherein the defective microstructure is detected based on the measured appearance of the microstructure.
5. The method of manufacturing an ink including a microstructure according to claim 1, wherein the step of forming the element structure includes:
and a step of applying a binding substance to the defective area.
6. The method for producing an ink containing a microstructure according to claim 5, wherein,
the binding substance comprises a resin
The step of forming the element structure further includes the step of curing the resin.
7. The method for manufacturing an ink containing a microstructure according to claim 5, wherein the bonding substance includes a low-melting-point alloy.
8. The method of manufacturing an ink containing microstructures as in claim 1, wherein the step of separating the plurality of microstructures from the substrate comprises:
and applying ultrasonic waves to the substrate.
9. The method for manufacturing an ink including a microstructure according to claim 8, wherein the element structure is separated from the substrate by the ultrasonic wave applied to the substrate.
10. The method for producing an ink containing a microstructure according to claim 9, wherein,
the normal microstructures are individually separated from the substrate, and
the defective microstructure is separated from the substrate so as to be included in the element structure.
11. The method of manufacturing an ink containing a microstructure according to claim 1, wherein the step of separating the normal microstructure and the element structure includes a step of selectively separating the element structure.
12. The method for manufacturing ink including a microstructure according to claim 11, wherein the step of selectively separating the element structure is performed with a filter including a plurality of opening portions.
13. The method for producing an ink containing a microstructure according to claim 12, wherein,
the normal microstructure passes through the filter, and
the element structure cannot pass through the filter.
14. The method for producing an ink containing a microstructure according to claim 12, wherein a maximum length of the normal microstructure is smaller than a maximum width of the opening portion.
15. The method for manufacturing an ink including a microstructure according to claim 14, wherein a width of the element structure is larger than the maximum width of the opening portion.
16. The method for manufacturing an ink containing a microstructure according to claim 12, wherein in the step of dividing the defective region, the defective region is divided such that a width of the defective region is larger than a maximum width of the opening portion.
17. The method for manufacturing an ink including a microstructure according to claim 16, wherein the normal microstructure disposed adjacent to the defective microstructure is included in the defective region.
18. The method for producing an ink containing a microstructure according to claim 1, wherein the element structure has a width larger than a maximum length of the normal microstructure.
19. The method for manufacturing an ink containing a microstructure according to claim 1, wherein the microstructure includes:
a first semiconductor layer;
a second semiconductor layer spaced apart from the first semiconductor layer; and
an active layer disposed between the first semiconductor layer and the second semiconductor layer.
20. The method for manufacturing an ink containing a microstructure according to claim 1, further comprising, after the step of separating the normal microstructure and the element structure:
mixing the normal microstructure with a solvent.
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