CN115732490B - Intelligent power module and equipment - Google Patents
Intelligent power module and equipment Download PDFInfo
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- CN115732490B CN115732490B CN202211442181.4A CN202211442181A CN115732490B CN 115732490 B CN115732490 B CN 115732490B CN 202211442181 A CN202211442181 A CN 202211442181A CN 115732490 B CN115732490 B CN 115732490B
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- 238000004806 packaging method and process Methods 0.000 claims abstract description 9
- 101100126329 Mus musculus Islr2 gene Proteins 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 14
- 238000010586 diagram Methods 0.000 description 11
- 238000003466 welding Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses an intelligent power module and equipment, the intelligent power module includes: the packaging body is internally provided with a control IC chip and a plurality of power chips, each of the power chips is electrically connected with the control IC chip, the control IC chip is provided with a plurality of contacts, the number of at least one contact is at least two, and the contacts are electrically connected with the power chip; the power pins are led out from one side of the packaging body close to the power chip; and the control IC pin is led out from one side of the packaging body close to the control IC chip and is electrically connected with the contact. By arranging two partial contacts on the layout of the control IC chip, the power modules with the grid electrodes at different positions can be compatible, the problem of connection matching between the control IC chip and the power chip is effectively solved, cross wires are avoided, the compatibility of the control IC chip is improved, and the length of a bonding wire between the control IC chip and a control IC pin can be correspondingly reduced.
Description
Technical Field
The present invention relates to the technical field of intelligent power modules, and in particular, to an intelligent power module and an apparatus.
Background
In the related art, when selecting a gate driving chip, it is often faced that although all functions and parameters of the driving chip meet requirements, the driving chip layout and the power chip layout are mismatched and cannot be used. As shown in fig. 1, the HOx pad (high side gate driving output) of the gate driving chip is on the left side, the VSx pad (high side power supply ground) is on the right side, and the gate (G pole) of the power chip is on the upper right side, according to the power module circuit design, the HOx of the driving chip needs to be connected with the gate of the power chip, and the VSx of the driving chip needs to be connected with the emitter of the power chip, which may cause a cross line and cannot be matched for use. Because of the mismatch problem, the driving chip cannot be used even if all functions and parameters are satisfied, and the model selection is difficult.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, the invention provides an intelligent power module, which can be compatible with power modules with grids at different positions by arranging two partial contacts on the layout of a control IC chip, efficiently solve the problem of connection matching between the control IC chip and the power chip and avoid cross wires.
The invention also provides equipment with the intelligent power module.
According to an embodiment of the first aspect of the present invention, an intelligent power module includes: the packaging body is internally provided with a control IC chip and a plurality of power chips, each of the power chips is electrically connected with the control IC chip, the control IC chip is provided with a plurality of contacts, the number of at least one contact is at least two, and the contacts are electrically connected with the power chips; the power pins are led out from one side of the packaging body, which is close to the power chips, and each of the power chips is electrically connected with a corresponding power pin in the power pins through a conductive piece; and the control IC pin is led out from one side of the packaging body, which is close to the control IC chip, and is electrically connected with the contact.
According to the intelligent power module provided by the embodiment of the invention, the power modules with the grid electrodes at different positions can be compatible by arranging two partial contacts on the layout of the control IC chip, so that the problem of connection matching between the control IC chip and the power chip is effectively solved, cross wires are avoided, the compatibility of the control IC chip is improved, and the length of a bonding wire between the control IC chip and a control IC pin can be correspondingly reduced.
According to some embodiments of the present invention, the control IC chip is a high-voltage control IC chip, on which a high-side power supply ground contact and a high-side door driving output contact are provided, the number of the high-side power supply ground contacts is at least two, at least two of the high-side power supply ground contacts are provided on two sides of the high-side door driving output contact, and at least one of the high-side power supply ground contacts is electrically connected with the power chip; or, the control IC chip is a high-voltage control IC chip, the high-voltage control IC chip is provided with a high-side power supply grounding contact and a high-side door driving output contact, the number of the high-side door driving output contacts is at least two, at least two high-side door driving output contacts are arranged on two sides of the high-side door driving output contact, and at least one high-side door driving output contact is electrically connected with the power chip.
According to some embodiments of the invention, the high side power ground contacts are two or the high side door drive output contacts are two.
According to some embodiments of the invention, the high side power ground contact is a three-phase contact and the high side door drive output contact is a three-phase contact.
According to some embodiments of the invention, the control IC chip is a low-voltage control IC chip, and a ground contact is provided on the low-voltage control IC chip, and at least two ground contacts are provided, and at least one ground contact is electrically connected with the control IC pin.
According to some embodiments of the invention, at least two of the ground contacts are disposed at intervals on both sides of the low-voltage control IC chip in the length direction.
According to some embodiments of the invention, the control IC chip is a low-voltage control IC chip, and power supply contacts are disposed on the low-voltage control IC chip, and at least two power supply contacts are electrically connected to the control IC pins.
According to some embodiments of the invention, at least two power supply contacts are arranged at two adjacent sides of the low-voltage control IC chip at intervals, and a linux contact is arranged between the at least two power supply contacts.
According to some embodiments of the invention, the smart power module further comprises: a first electrical connection electrically connected between the power pin and the power chip; and, the intelligent power module further comprises: and the second electric connector is electrically connected between the control IC chip and the control IC pin.
An apparatus according to an embodiment of the second aspect of the present invention comprises the smart power module and a controller electrically connected to the smart power module.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic diagram of a first embodiment of a prior art smart power module;
FIG. 2 is a schematic diagram of a second embodiment of a prior art smart power module;
fig. 3 is a schematic structural diagram of a smart power module according to a first embodiment of the present invention;
fig. 4 is a schematic configuration diagram of a high-voltage control IC chip according to a first embodiment of the present invention;
fig. 5 is a schematic diagram of a high-voltage control IC chip according to a first embodiment of the present invention;
fig. 6 is a schematic structural diagram of a smart power module according to a second embodiment of the present invention;
fig. 7 is a schematic structural diagram of a smart power module according to a third embodiment of the present invention;
fig. 8 is a schematic structural diagram of a smart power module according to a fourth embodiment of the present invention;
fig. 9 is a schematic diagram of a low-voltage control IC chip according to a fourth embodiment of the present invention;
fig. 10 is a schematic structural diagram of a smart power module according to a fifth embodiment of the present invention;
fig. 11 is a schematic structural diagram of a low-voltage control IC chip according to a fifth embodiment of the present invention.
Reference numerals:
the prior art comprises the following steps:
1', an intelligent power module; 200', a power chip; 300', a control IC chip;
the invention comprises the following steps:
1. an intelligent power module; 100. a package; 200. a power chip; 300. a control IC chip; 310. a high voltage control IC chip; 311. a high side power ground contact; 312. high side door drive output contacts; 320. a low voltage control IC chip; 321. a ground contact; 322. a power supply contact; 400. a power pin; 500. a control IC pin; 600. a bonding wire; 700. and a second electrical connector.
Detailed Description
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and to simplify the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
In the description of the invention, a "first feature" or "second feature" may include one or more of such features.
In the description of the present invention, "plurality" means two or more.
In the description of the invention, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, and may also include the first and second features not being in direct contact but being in contact with each other by another feature therebetween.
In the description of the invention, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature.
The following describes an intelligent power module 1 according to an embodiment of the present invention with reference to fig. 3-11, and the present invention also proposes a device having the above intelligent power module 1.
Referring to fig. 3 to 11, an intelligent power module 1 according to an embodiment of the present invention includes: the package body 100, the plurality of power pins 400 and the control IC pins 500, the control IC chip 300 and the plurality of power chips 200 are arranged in the package body 100, each of the plurality of power chips 200 is electrically connected with the control IC chip 300, the plurality of power pins 400 are led out at one side of the package body 100 close to the power chip 200, each of the plurality of power chips 200 is electrically connected with the corresponding power pin 400 in the plurality of power pins 400 through a conductive piece, and the control IC pin 500 is led out at one side of the package body 100 close to the control IC chip 300.
The control IC chip 300 is provided with a plurality of contacts, at least two contacts are provided, the contacts are electrically connected with the power chip 200, and the control IC pins 500 are electrically connected with the contacts. By arranging two partial contacts on the layout of the control IC chip 300, the power module with the grid electrodes at different positions can be compatible, the problem of connection matching between the control IC chip 300 and the power chip 200 is effectively solved, cross wires are avoided, the compatibility of the control IC chip 300 is improved, and the length of the bonding wire 600 between the control IC chip 300 and the control IC pin 500 can be correspondingly reduced
According to the intelligent power module 1 provided by the embodiment of the invention, the power modules with the grid electrodes at different positions can be compatible, the problem of connection matching between the control IC chip 300 and the power chip 200 is effectively solved, cross wires are avoided, and the compatibility of the control IC chip 300 is improved.
In the prior art, referring to fig. 1-2, in order to solve the problem of adapting the control IC chip 300', a part of the prior art rotates the power chip 200' by 90 degrees counterclockwise to avoid the crossing of the high side gate driving output contact of the control IC chip 300 'and the gate bonding wire of the power chip 200' with the high side power supply ground contact of the control IC chip 300 'and the emitter bonding wire of the power chip 200'. However, there are two problems with the power chip 200' after rotation, first: the bonding direction of the bonding wires (the high-side power supply ground contact of the control IC chip 300 'and the emitter bonding wire of the power chip 200') is the same as the trench gate direction of the power chip 200', which affects the reliability of the power chip 200'; second,: after the power chip 200' rotates, the emitter X direction of the power chip 200' is narrower, and the bonding space of 3 aluminum wires (12 mil or thicker) is insufficient, so that the requirement of the high-power intelligent power module 1' cannot be met.
According to the first aspect of the embodiment of the present invention, referring to fig. 3-7, the control IC chip 300 is a high voltage control IC chip 310, the high voltage control IC chip 310 is provided with at least two high side power supply ground contacts 311 and high side door driving output contacts 312, the at least two high side power supply ground contacts 311 are disposed on two sides of the high side door driving output contacts 312, and the at least one high side power supply ground contact 311 is electrically connected to the power chip 200. Thus, at least two high-side power supply ground contacts 311 are provided on the high-voltage control IC chip 310, so that the bonding wire 600 connected between the high-side power supply ground contact 311 and the power chip 200 can be selectively connected to one of the at least two high-side power supply ground contacts 311 when the gate of the power chip 200 is electrically connected to the high-side power supply ground contact 311 and the high-side door drive output contact 312, so that the bonding wire 600 connected between the high-side power supply ground contact 311 and the power chip 200 and the bonding wire 600 connected between the high-side door drive output contact 312 and the power chip 200 do not cross. Thus, the control IC chip 300 can be adapted to the power chips 200 with different gate positions, so that the compatibility of the control IC chip 300 is greatly improved, and meanwhile, the direction of the power chip 200 does not need to be rotated, thereby improving the reliability and the production efficiency of the product.
Specifically, referring to fig. 3, when the gate of the power chip 200 is on the right side, the high side gate driving output contact 312 of the control IC chip 300 is connected to the gate of the power chip 200, and the high side power supply ground contact 311 on the left side of the high side gate driving output contact 312 is connected to the emitter of the power chip 200, so that the direction of the power chip 200 does not need to be rotated, the influence of the bonding force of the bonding wire 600 on the trench gate of the power chip 200 is reduced, and the reliability is improved. Meanwhile, since the rotation motion of the power chip 200 is reduced, the chip mounting efficiency is improved.
And, the X direction of the emitter of the power chip 200 is wider, and the welding of three bonding wires 600 with larger diameters can be performed.
Specifically, as shown in fig. 7, when the gate of the power chip 200 is on the left side, the high side gate driving output contact 312 of the control IC chip 300 is connected to the gate of the power chip 200, and the high side power supply ground contact 311 on the left side of the high side gate driving output contact 312 is connected to the emitter of the power chip 200, there is no need to rotate the direction of the power chip 200, the control IC chip 300 has high compatibility, and when the control IC chip 300 is selected, the efficiency is greatly improved, and the development time is saved.
According to the second aspect of the present invention, referring to fig. 3-7, the control IC chip 300 is a high voltage control IC chip 310, a high side power supply ground contact 311 and high side gate driving output contacts 312 are provided on the high voltage control IC chip 310, at least two high side gate driving output contacts 312 are provided on both sides of the high side power supply ground contact 311, and at least one high side gate driving output contact 312 is electrically connected to the power chip 200. Thus, at least two high side gate driving output contacts 312 are provided on the high voltage control IC chip 310, so that the bonding wires 600 connected between the high side gate driving output contacts 312 and the power chip 200 can be selectively connected to one of the at least two high side gate driving output contacts 312 when the gate of the power chip 200 is electrically connected to the high side power supply ground contact 311 and the high side gate driving output contact 312, so that the bonding wires 600 connected between the high side power supply ground contact 311 and the power chip 200 and the bonding wires 600 connected between the high side gate driving output contact 312 and the power chip 200 do not cross. Thus, the control IC chip 300 can be adapted to the power chips 200 with different gate positions, so that the compatibility of the control IC chip 300 is greatly improved, and meanwhile, the direction of the power chip 200 does not need to be rotated, thereby improving the reliability and the production efficiency of the product.
Specifically, referring to fig. 3, when the gate of the power chip 200 is on the right side, the high side gate driving output contact 312 of the control IC chip 300 is connected to the gate of the power chip 200, and the high side gate driving output contact 312 on the right side of the high side power supply ground contact 311 is connected to the emitter of the power chip 200, so that the direction of the power chip 200 does not need to be rotated, the influence of the bonding force of the bonding wire 600 on the trench gate of the power chip 200 is reduced, and the reliability is improved. Meanwhile, since the rotation motion of the power chip 200 is reduced, the chip mounting efficiency is improved.
And, the X direction of the emitter of the power chip 200 is wider, and the welding of three bonding wires 600 with larger diameters can be performed.
Specifically, as shown in fig. 6, when the gate of the power chip 200 is on the right side, the high side gate driving output contact 312 of the control IC chip 300 is connected to the gate of the power chip 200, and the high side gate driving output contact 312 on the right side of the high side power supply ground contact 311 is connected to the emitter of the power chip 200, there is no need to rotate the direction of the power chip 200, the control IC chip 300 has high compatibility, and when the control IC chip 300 is selected, the efficiency is greatly improved, and the development time is saved.
Further, referring to fig. 4, the high-side power supply ground contacts 311 may be two. In this manner, two high side power ground contacts 311 may be provided on both sides of the high side gate drive output contact 312, respectively, to facilitate connection between the high side power ground contacts 311 and the emitter of the rate chip. Of course, the high-side power supply ground contacts 311 may be three, and the three high-side power supply ground contacts 311 are disposed on three sides of the high-side door driving output contact 312, so that the application range of the control IC chip 300 can be expanded, i.e., the electrical connection between the high-side power supply ground contacts 311 and the emitter of the power chip 200 is more diversified.
Similarly, as shown with reference to fig. 5, the high side door drive output contacts 312 may be two. In this manner, two high side gate drive output contacts 312 may be provided on either side of the high side power ground contact 311, respectively, to facilitate connection between the high side gate drive output contacts 312 and the emitter of the rate chip. Of course, the number of the high side gate driving output contacts 312 may be three, and the three high side gate driving output contacts 312 are disposed on three sides of the high side power supply ground contact 311, so that the application range of the control IC chip 300 can be expanded, that is, the electrical connection between the high side gate driving output contacts 312 and the emitter of the power chip 200 is more diversified.
Wherein the high side power ground contact 311 is a three-phase contact and the high side door drive output contact 312 is a three-phase contact. That is, the high-side power ground contact 311 has three types of contacts, which are a high-side power ground U contact, a high-side power ground V contact, and a high-side power ground W contact, respectively. Similarly, the high side gate drive output contact 312 has three types of contacts, a high side gate drive output U contact, a high side gate drive output V contact, and a high side gate drive output W contact. As such, the high-side power ground contacts 311 have three types of contacts, and each type of high-side power ground contacts 311 has two, so that two of each type of high-side power ground contacts 311 can be disposed on both sides of each type of high-side door drive output contacts 312.
Referring to fig. 8 and 9, the control IC chip 300 may be a low voltage control IC chip 320, and the low voltage control IC chip 320 is provided with at least two ground contacts 321, and at least one ground contact 321 is electrically connected to the control IC pin 500. That is, at least two ground contacts 321 are disposed on the low voltage control IC chip 320, so that the bonding wire 600 connected between the ground contacts 321 and the control IC pins 500 can be selectively connected to one of the at least two ground contacts 321 when the control IC chip 300 is electrically connected to the control IC pins 500, which effectively shortens the length of the bonding wire 600, and greatly improves the compatibility of the control IC chip 300, i.e., the control IC chip 300 can be applied to the smart power modules 1 of different specifications, thereby reducing the design cost and the production cost of the smart power modules 1.
As shown in fig. 9, at least two ground contacts 321 are provided at intervals on both sides of the low-voltage control IC chip 320 in the longitudinal direction. That is, at least two ground contacts 321 are distributed on two sides of the low voltage control IC chip 320, and a single ground contact 321 can be selected according to the position of the control IC pin 500, so that the lead length is effectively shortened, and the compatibility of the control IC chip 300 is greatly improved. And, when the control IC chip 300 is disposed on the left side or the right side of the intelligent power module 1, the ground contacts 321 on both sides of the control IC chip 300 can be conveniently electrically connected to the control IC pins 500.
And, referring to fig. 10 and 11, the control IC chip 300 may be a low voltage control IC chip 320, and power supply contacts 322 are provided on the low voltage control IC chip 320, and at least two power supply contacts 322 are electrically connected to at least one power supply contact 322 and a control IC pin 500. That is, at least two power supply contacts 322 are disposed on the low voltage control IC chip 320, so that the bonding wire 600 connected between the power supply contacts 322 and the control IC pins 500 can be selectively connected to one of the at least two power supply contacts 322 when the control IC chip 300 is electrically connected to the control IC pins 500, thereby effectively shortening the length of the bonding wire 600 and greatly improving the compatibility of the control IC chip 300, i.e., the control IC chip 300 can be applied to the intelligent power modules 1 of different specifications, thereby reducing the design cost and the production cost of the intelligent power modules 1.
And, referring to fig. 11, at least two power supply contacts 322 are disposed at intervals on two adjacent sides of the low voltage control IC chip 320, and a linx contact is interposed between at least two power supply contacts 322. At least two grounding contacts 321 are distributed on two sides of the low-voltage control IC chip 320, and a single grounding contact 321 can be selected according to the position of the control IC pin 500, so that the lead length is effectively shortened, and the compatibility of the control IC chip 300 is greatly improved. And, a linx contact is provided between the two power supply contacts 322, wherein the linx contact is a three-phase contact
Referring to fig. 3 to 11, the smart power module 1 further includes: the first electrical connector is electrically connected between the power pin 400 and the power chip 200 chip. As such, a first electrical connection may be provided between the power pin 400 and the power chip 200 chip, and a first electrical connection may be provided between the control IC chip 300 and the power chip 200 chip. The first electrical connector may be a bonding wire 600, and further, the bonding wire 600 includes, but is not limited to, gold wire, silver wire, copper wire, aluminum wire, copper foil, and aluminum foil.
And, referring to fig. 3 to 11, the intelligent power module 1 further includes: the second electrical connector 700, the second electrical connector 700 is electrically connected between the control IC chip 300 and the control IC pin 500. Through the connection between each power pin 400 and the corresponding power chip 200 through the second electrical connector 700, an integral connection structure is formed between the corresponding power chip 200 and the power pin 400, so that the second electrical connector 700 can be provided with a shape with a larger cross-sectional area, the through-flow capacity between the power chip 200 and the power pin 400 is stronger, and the second electrical connector 700 generates lower heat.
For example, the second electrical connector 700 forms a conductive strip in the shape of a strip, and the second electrical connector 700 is more firmly soldered to the power chip 200. And compared with the welding mode of aluminum wires, the welding area of the second electric connecting piece 700 is larger, each aluminum wire is not required to be independently welded, only the whole second electric connecting piece 700 is required to be independently welded, and the welding times are reduced.
In some embodiments of the present invention, the second electrical connector 700 is an aluminum strip. The aluminum strip has larger welding width and the welding process is relatively simple. And the aluminum strip is more reliable than the aluminum wire, the surface that the aluminum strip contacted with the power chip 200 and the power pin 400 forms a plane, the bonding between the aluminum strip and the power chip 200 and between the aluminum strip and the power pin 400 is more firm, and the aluminum strip connects the electrode of the power chip 200 and the power pin 400 to form a loop, so that the problem of jump point tearing can not be caused.
In other embodiments of the present invention, the second electrical connector 700 is an aluminum-clad copper-cored conductive tape that is connected to the power chip 200 and the power pins 400. The conductive strip with the copper core wrapped with aluminum has good welding performance, and a compact oxide film is formed on the outer peripheral surface of the copper core, so that the durability of the second electric connector 700 is improved.
An apparatus according to an embodiment of the present invention is described below.
The device according to an embodiment of the invention comprises an intelligent power module 1 and a controller according to the above-described embodiments of the invention. The controller is electrically connected with the intelligent power module 1.
The device according to the embodiment of the invention has the advantages of strong current capacity, firm connection, high welding efficiency and the like by utilizing the intelligent power module 1 according to the embodiment of the invention.
Other configurations and operations of the intelligent power module 1 and the apparatus according to the embodiments of the present invention are known to those skilled in the art, and will not be described in detail herein.
Other configurations and operations of the intelligent power module 1 and the apparatus according to the embodiments of the present invention are known to those skilled in the art, and will not be described in detail herein.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. An intelligent power module, comprising:
the packaging body is internally provided with a control IC chip and a plurality of power chips, each of the power chips is electrically connected with the control IC chip, the control IC chip is provided with a plurality of contacts, the number of at least one contact is at least two, the contacts of the same kind in the at least one contact are respectively arranged at two sides of the other contacts, the power chips are electrically connected with part of the contacts,
the power pins are led out from one side of the packaging body, which is close to the power chips, and each of the power chips is electrically connected with a corresponding power pin in the power pins through a conductive piece;
the control IC pin is led out from one side of the packaging body, which is close to the control IC chip, and is electrically connected with the other part of the contacts;
only the contacts located at one side of the other contacts in the contacts of the same kind are electrically connected with the power chip or the control IC pin.
2. The intelligent power module according to claim 1, wherein the control IC chip comprises a high-voltage control IC chip, wherein high-side power supply ground contacts and high-side door drive output contacts are arranged on the high-voltage control IC chip, the number of the high-side power supply ground contacts is at least two, the at least two high-side power supply ground contacts are arranged on two sides of the high-side door drive output contact, and at least one high-side power supply ground contact is electrically connected with the power chip; or alternatively, the first and second heat exchangers may be,
the control IC chip comprises a high-voltage control IC chip, wherein the high-voltage control IC chip is provided with at least two high-side power supply grounding contacts and high-side door driving output contacts, the at least two high-side door driving output contacts are arranged on two sides of the high-side door driving output contacts, and at least one high-side door driving output contact is electrically connected with the power chip.
3. The smart power module of claim 2 wherein the high side power ground contacts are two or the high side door drive output contacts are two.
4. The intelligent power module according to claim 3, wherein the high side power ground contact is a three-phase contact and the high side door drive output contact is a three-phase contact.
5. The intelligent power module according to claim 1, wherein the control IC chip comprises a low voltage control IC chip, and a ground contact is disposed on the low voltage control IC chip, and the ground contacts are at least two, and at least one of the ground contacts is electrically connected to the control IC pin.
6. The intelligent power module according to claim 5, wherein at least two of the ground contacts are provided at intervals on both sides of the low-voltage control IC chip in the length direction.
7. The intelligent power module according to claim 1, wherein the control IC chip comprises a low voltage control IC chip, wherein power supply contacts are provided on the low voltage control IC chip, the number of the power supply contacts is at least two, and at least one of the power supply contacts is electrically connected with the control IC pin.
8. The intelligent power module according to claim 7, wherein at least two of the power supply contacts are arranged at intervals on two adjacent sides of the low-voltage control IC chip, and a linx contact is arranged between at least two of the power supply contacts.
9. The intelligent power module of claim 1, further comprising: a first electrical connection electrically connected between the power pin and the power chip; the method comprises the steps of,
the intelligent power module further comprises: and the second electric connector is electrically connected between the control IC chip and the control IC pin.
10. A device having a smart power module, comprising the smart power module of any of claims 1-9 and a controller electrically connected to the smart power module.
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