CN115657200A - Silicon-based monolithic integrated transmitting-receiving universal light-operated multi-beam forming network chip - Google Patents
Silicon-based monolithic integrated transmitting-receiving universal light-operated multi-beam forming network chip Download PDFInfo
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Abstract
The invention relates to the field of microwave photon technology and optoelectronic devices, in particular to a silicon-based monolithic integrated transmitting-receiving universal light-operated multi-beam forming network chip. The device comprises M + N electro-optical modulators, M + N photoelectric detectors, N multiplied by M adjustable optical delay lines, M + N spot size converters, 2 multiplied by N test optical detectors, N + M optical splitters and N + M wavelength division multiplexers. The network chip completes the broadband beam forming function on the phased array system with the number of antennas of N and the number of beams of M through the distribution and combination of optical signals. An electro-optical modulator and a photoelectric detector of the chip complete on-chip electro-optical and photoelectric conversion. The adjustable light delay line completes delay and amplitude adjustment according to the control signal. The adjustable light delay line does not contain an optical attenuator, but adopts a composite light switch structure to realize the synchronous control of an output path and amplitude. The invention realizes the monolithic integrated microwave photon multi-beam forming network and has the advantages of high integration level, photoelectric integration, general transceiving and expandable array scale and beam scale.
Description
Technical Field
The invention relates to the field of microwave photon technology and integrated optoelectronic devices, in particular to a silicon-based monolithic integrated light-operated and multi-beam forming network chip for transmitting and receiving.
Background
The phased array antenna can realize inertia-free beam scanning, has the advantages of strong flexibility, high precision and the like compared with a mechanical scanning antenna, and is widely applied. The phased array antenna is formed by adopting analog beams, and the phase shifter is utilized to change the feed phase of each radiation unit, so that the maximum direction of an antenna directional diagram is changed, and beam scanning is realized. However, the phase shifter causes the antenna to be restricted by beam deflection and aperture transit time, so that the instantaneous bandwidth of the antenna is limited, and the requirements of high-speed communication, high-resolution radar imaging, broadband electronic countermeasure and the like cannot be met.
The optical control beam forming technology of optical true delay is adopted, so that the instantaneous bandwidth of the phased array antenna can be effectively improved, and the phased array antenna has the advantages of small size, light weight, electromagnetic interference resistance and the like, and is rapidly developed and applied in recent years. However, the traditional optically controlled beam forming is mainly realized based on a fiber delay device. The optical fiber delay device has a large volume, integration and miniaturization are difficult to realize, and delay precision is limited by optical fiber processing precision and is difficult to meet the precision requirement of beam forming. Optical waveguide-based optically controlled beam forming network chips are receiving increasing attention.
However, the current optically controlled beam forming network chip has the following three problems.
Firstly, although the optical delay line device is already in a chip form, discrete devices are still commonly used for key functions such as an electro-optical modulator, a photodetector, and an optical wavelength division multiplexer. The whole chip degree of the light-operated beam forming network is low, so that the integration level is poor, and the function is relatively single. There is a great need for highly integrated, chip-based optical control beam forming networks, especially for monolithically integrated optical control beam forming networks.
Secondly, for the architecture of the multi-beam network, the existing scheme has complex component design or is not suitable for monolithic integration. The core delay unit of a part of multi-beam forming network needs to adopt dispersive optical waveguides. Compared with the conventional optical waveguide, the dispersion optical waveguide has complex design and large processing difficulty, and the corresponding laser source needs to be changed from a fixed wavelength to a scanning wavelength, so that the chip design and processing difficulty and the control difficulty are obviously increased. Part of the multi-beam forming network needs to adopt multi-stage cascaded wavelength division multiplexers. However, after the discrete device is converted into the multifunctional monolithic integration, the wavelength division multiplexers connected in series in multiple stages need complicated calibration and coordination due to processing errors, and the practicability is poor.
Thirdly, on the topology structure of the light-controlled beam forming network, many existing light-controlled beam forming network structures only support receiving or only supporting transmitting on the topology structure, and the common use of receiving and transmitting is difficult to achieve. Meanwhile, when the antenna scale and the beam scale increase, the topological structure of the network needs to be rearranged, and the compatibility and the expandability are poor. Meanwhile, a large number of attenuators, circulators, micro-ring resonators and other devices exist in the topological architecture, so that the network architecture is complex and redundant, or the stability is poor.
Therefore, a light-operated beam forming network with high integration, multi-beam, general transceiving, strong expansibility and simple control is urgently needed.
Disclosure of Invention
In order to avoid the problems in the background art, the invention provides a silicon-based monolithic integrated light-operated multi-beam forming network chip for transmitting and receiving. The beam forming network architecture of the chip is suitable for large-scale application scenes of multi-array element and multi-beam, and the number of beams can be continuously expanded. The structure is simple, the receiving and transmitting are general, and the device can be used as a transmitting beam forming network and a receiving beam forming network. And the signal is flexibly selectable for radio frequency input and output connection and laser input and output. The ultra-wideband phased array has the advantages of high integration, general transceiving, photoelectric integration and the like, and has a remarkable application prospect in an ultra-wideband phased array system.
In order to realize the purpose of the invention, the following technical scheme is adopted for realizing the purpose:
a silicon-based monolithic integrated light-operated multi-beam forming network chip for receiving and transmitting comprises M + N electro-optical modulators, M + N photoelectric detectors, N multiplied by M adjustable light delay lines, M + N spot size converters, 2M multiplied by N test photodetectors, N + M optical splitters and N + M wavelength division multiplexers, wherein N =2 k ，M＝2 j K and j are integers more than or equal to 0;
on the left side of the chip, N electro-optical modulators and N spot size converters are respectively and correspondingly connected with N optical splitters, N photoelectric detectors are correspondingly connected with N wavelength division multiplexers, and the optical splitters and the wavelength division multiplexers are respectively connected with two ports on the left side of the tunable optical delay line; on the right side of the chip, M wavelength division multiplexers are respectively and correspondingly connected with M photoelectric detectors and M spot size converters, M electro-optical modulators are correspondingly connected with M optical splitters, and the wavelength division multiplexers and the optical splitters are connected with two ports on the right side of the tunable optical delay line;
the electro-optical modulator or the spot-size converter is used for receiving the radio-frequency signal and sending the processed signal to the optical splitter; the optical branching device is used for equally dividing optical signals into multiple paths and then correspondingly sending the multiple paths into the adjustable optical delay lines; the tunable optical delay line is used for carrying out delay control and amplitude control on an input signal and then entering the wavelength division multiplexer; the wavelength division multiplexer is used for combining a plurality of paths of signals from different adjustable light delay lines into 1 path, and the combined signals are sent to the spot size converter to output optical signals or sent to the photoelectric detector to output radio frequency signals;
the adjustable light delay line is formed by serially connecting a multi-stage optical switch and optical waveguides with different lengths, and the delay amount is controlled by switching the length of a path for transmitting an optical signal; the first and last stages of the tunable optical delay line are a composite optical switch, which includes an MMI, a phase shifter, a tap optical coupler, and a photodetector.
Further, the nxm tunable light delay lines are defined by numbers 11, 12 \8230 \ 8230 \ 8230;. 1m,21, 22, \8230;. 8230;. 2M, \8230;. 8230;. N1, N2, \8230;. 8230;. NM, the first bit of the delay line number is N, the second bit is M, and the signals are distributed in the following way: the mth port of the nth optical splitter on the left side of the chip is connected with the nth adjustable delay line, and the nth adjustable delay line is connected with the nth port of the mth wavelength division multiplexer on the right side of the chip; wherein N =1,2, \8230: \8230, N, M =1,2, \8230;, M.
Further, N corresponds to the number of antennas supported by the chip, M corresponds to the number of beams supported by the antennas, and N and M may be equal or unequal.
Furthermore, the electro-optical modulator adopts a full silicon-based design, the waveguide structure is an SOI ridge type optical waveguide, the optical structure body is a Mach-Zehnder interferometer, and the electrical structure body is a PN junction; the photoelectric detector and the test optical detector adopt waveguide type germanium-silicon-based germanium detectors, and the butt joint mode of the waveguides and the detectors adopts butt joint coupling; the tunable optical delay line, the optical splitter and the wavelength division multiplexer adopt rectangular optical waveguides or ridge optical waveguides made of SOI materials; and (3) monolithic integration of the whole silicon-based chip.
Furthermore, the amplitude control in the adjustable delay line is completed through a composite light switch, and the composite light switch controls the attenuation value of a specific output port.
Furthermore, each electro-optical modulator inputs a laser carrier, and the frequency difference Δ f of any two carriers>>f B ，f B The highest operating frequency of the photodetector.
Compared with the prior art, the invention has the following beneficial effects:
the chip of the invention adopts a silicon-based monolithic integration process, a single chip comprises an electro-optical modulator, an adjustable light delay line, a photoelectric detector and the like, the external connection of the electro-optical modulator, the photoelectric detector, an optical isolator, a light polarization controller, an optical circulator and other devices is not needed, and the monolithic supports multiple beams, thereby effectively improving the integration degree of the light-controlled beam forming network. And the silicon-based CMOS process is adopted for processing, the processing steps are intensive, the batch consistency is good, and the method is suitable for large-scale production and application.
The chip of the invention is universal for receiving and transmitting, and the antenna scale and the beam scale can be continuously expanded. And the photoelectric integrated design is adopted, signals can be flexibly selected for radio frequency input/output and laser input/output, and the system can be widely applied to various application scenes. Can be used singly or can be cascaded by a plurality of pieces.
The design of the adjustable light delay line not only realizes the conventional delay control, but also simultaneously realizes the amplitude control by utilizing the coincidence optical switch, does not need to adopt a separate optical attenuator, and simplifies the structure of the light-operated beam forming network. And the design of the composite light switch ensures that the multi-path amplitude balance control can be automated, and the complex calibration and control process is avoided.
The adjustable light delay line does not need to adopt a dispersion optical waveguide and a multi-stage series wavelength division multiplexer, so that the design and the control are simple, and the compatibility to process errors is strong.
Drawings
Fig. 1 is a schematic view of an overall structure of a silicon-based monolithic integrated transceiver general optical control multi-beam forming network chip according to the present invention;
FIG. 2 is a schematic diagram of the connection with other parts of the phased array system when the present invention is used as a receive beam forming network;
FIG. 3 is a schematic diagram of the connection relationship with other parts of the phased array system when the present invention is used as a transmit beam forming network;
FIG. 4 is a schematic diagram of the connection relationship between the phased array system and the present invention in the fiber remote mode (taking receiving as an example);
FIG. 5 is a schematic structural diagram of a conventional tunable optical delay line with delay and amplitude control functions;
FIG. 6 is a schematic diagram of a composite optical switch according to the present invention;
fig. 7 is a schematic diagram of the working principle of the composite optical switch of the present invention.
Detailed Description
The following detailed description of the present invention will be made with reference to the accompanying drawings 1-7.
FIG. 1 is a silicon-based monolithic integration of the present inventionThe general structure of the transmitting-receiving light-operated multi-beam forming network chip and the chip architecture. The chip mainly comprises the following units: m + N electro-optical modulators, M + N photoelectric detectors, N M adjustable light delay lines, M + N spot size converters, 2M N test light detectors, N + M optical splitters and N + M wavelength division multiplexers, wherein N =2 k ，M＝2 j And k and j are integers more than or equal to 0. The chip comprises the following external interfaces: the RF entrance number on the left side is 111-11N, the RF exit number is 121-12N, the carrier laser entrance number is 131-13N, and the signal optical interface number is 141-14N,. The right side has the radio frequency entrance number 211-21N, the radio frequency exit number 221-22N, the carrier laser entrance number 231-23N and the signal optical interface number 241-24N.
The working principle and the signal flow when the chip is used as a receiving beam forming network are as follows:
n paths of radio frequency signals are input from radio frequency ports 111-11N, and are modulated onto a carrier wave through electro-optical conversion in an electro-optical modulator to be converted into optical signals. The carrier wave is input to each electro-optic modulator through 131-13N. Each signal enters the optical splitter through the optical switch. The N paths of signals can also be input through an optical interface of an off-chip 141-14N, enter an on-chip waveguide through a spot-size converter, pass through an optical switch and then enter an optical splitter, and the electro-optical conversion function is realized through an off-chip device or a front-stage chip. The optical splitter equally divides the optical signal into M paths and then enters the adjustable optical delay line. The number of the delay line with adjustable light is 11, 12 \8230, \8230, 1M,21, 22, \8230, 2M, \8230, 8230, N1, N2, \8230, 8230and NM. The first bit of the number of the adjustable light delay line is defined as n, and the second bit is defined as m. The optical signal distribution mode is as follows: and (4) the output optical signal enters a delay line nm from the mth port behind the nth optical splitter on the left side.
The optical signal propagates from left to right in the adjustable optical delay line and passes through p cascaded optical switches, and the selectable delay amount is 0-2 p τ, step τ. Wherein the 2 nd stage to the p-1 st stage are conventional optical switches and are in a direct-on state or a cross state. The first and last stage optical switches are composite optical switches, which include an MMI, a phase shifter, a tap optical coupler, and a photodetector. The composite optical switch not only has a direct-on state andthe cross state also has an intermediate interference state and has an optical power monitoring function. The first-stage switch is in a direct-connection state or a cross state of the composite optical switch and is used as a conventional optical switch. The last stage of optical switch works in the intermediate interference state, can control the output power of the selected output port while realizing the path selection, namely, the optical switch and the attenuator function are simultaneously realized, and the attenuation can be automatically controlled according to the requirement. The specific structure and principle of which is discussed in subsequent fig. 7. The first stage does not adopt a conventional optical switch, but adopts a composite optical switch to play the function of the conventional optical switch, because the first stage optical switch of the receiving delay line becomes the last stage optical switch of the transmitting delay line in the transmitting network due to the opposite signal flow direction, and the last stage needs to be the composite optical switch.
The next stage of the adjustable optical delay line is an N-in-one wavelength division multiplexer. The connection relation of the combining network is that the nm-th adjustable delay line is connected with the nth inlet of the mth wavelength division multiplexer. The N paths of optical signals are combined into one path in the N-in-one wavelength division multiplexer. Then, by means of the optical switch, it is selected whether to output the signal as a radio frequency signal or an optical signal. When the radio frequency signal is output, the optical switch switches to the photoelectric detector, the photoelectric detector completes the photoelectric conversion of each path of signal through the intensity detection, and then the signal of the mth photoelectric detector is output through the port 22m, namely the mth beam output by the network is formed by the light-operated beam. Because the frequency interval of each path of carrier wave is large enough, crosstalk can not occur in the photoelectric conversion process of each path of signal after being combined. When the optical signal is output, the optical switch switches to the spot size converter and outputs the optical signal through the ports 241-24M.
The working principle and the signal flow when the chip is used as a transmitting beam forming network are as follows:
the M paths of radio frequency signals are input from the radio frequency ports 211-21M, and are modulated onto a carrier wave through electro-optical conversion in the electro-optical modulator to be converted into optical signals. The carrier wave is input to each electro-optic modulator through 231-23N. Each signal enters the optical splitter through the optical switch. The M paths of signals can also be input through an off-chip 241-24M optical interface, enter an on-chip waveguide through mode spot conversion, pass through an optical switch and then enter an optical splitter, and the electro-optical conversion function is realized through an off-chip device or a front-stage chip. The optical splitter equally divides the optical signals into N paths and then enters the delay line. The optical signal distribution mode is as follows: and (4) the optical signal output by the nth port behind the mth optical splitter on the right enters an adjustable optical delay line nm.
The optical signal propagates in the tunable optical delay line from right to left through p cascaded optical switches. The selectable time delay amount is 0-2 p τ, step τ. Wherein the 2 nd stage to the p-1 st stage are conventional optical switches and are in a direct-on state or a cross state. The first stage and the last stage of optical switches are composite optical switches. The first-stage switch is in a direct-connection state or a cross state of the composite optical switch and is used as a conventional optical switch. The last stage of optical switch works in the intermediate interference state, can control the output power of the selected output port while realizing the path selection, namely, the optical switch and the attenuator function are simultaneously realized, and the attenuation can be automatically controlled according to the requirement.
The next stage of the adjustable optical delay line is an M-in-one wavelength division multiplexer. The connection relation of the combining network is that the nm delay line is connected with the m inlet of the nth wavelength division multiplexer. The M paths of optical signals are combined into one path in the M-in-one wavelength division multiplexer. Then, by means of the optical switch, it is selected whether to output the radio frequency signal or the optical signal. When the radio frequency signal is output, the optical switch switches to the photoelectric detector, the photoelectric detector completes the photoelectric conversion of each path of signal through the intensity detection, and then the signal of the mth photoelectric detector is output through the port 12n, namely the signal of the nth antenna output by the light-operated beam forming network. Because the frequency interval of each carrier is large enough, crosstalk can not occur in the photoelectric conversion process of each signal after combination. When the optical signal is output, the optical switch switches to the spot size converter and outputs the optical signal through the ports 141-14M.
The electro-optical modulator is designed by adopting a full silicon base, the waveguide structure is an SOI ridge type optical waveguide, the optical structure body is a Mach-Zehnder interferometer, and the electrical structure body is a PN junction; the photoelectric detector and the test optical detector adopt waveguide type germanium-silicon-based germanium detectors, and the waveguide and the detectors are in butt coupling; the tunable optical delay line, the optical splitter and the wavelength division multiplexer adopt rectangular optical waveguides or ridge optical waveguides made of SOI materials; and monolithic integration of the whole silicon substrate of the chip.
Each electro-optical modulator is respectively input with a laser carrier, and the frequency difference delta f of any two carriers>>f B ，f B The highest operating frequency of the photodetector.
Fig. 2 is a connection relationship diagram between a silicon-based monolithic integrated transceiving general optical control multi-beam forming network chip and other parts of a phased array system when the chip is used as a receiving beam forming network. The phased array system array antenna receives microwave signals transmitted from the space. The array antenna has different array elements, namely antenna 1, antenna 2, \ 8230 \ 8230:and antenna N. A radio frequency amplifier is arranged behind each antenna, and the number of the radio frequency amplifier is radio frequency amplification 1, radio frequency amplification 2, \8230;, and radio frequency amplification N. The signals received by the antenna enter the light-controlled beam forming network chip after being processed by radio frequency amplification, filtering and the like. The input port of the signal received by the antenna n is 11n. Signals of each antenna are subjected to electro-optical conversion, shunting, distribution, time delay, amplitude control, combination, photoelectric conversion and other processes in the light-controlled beam forming network chip to complete the beam forming process, and are output from the output ports 221-22M, and the signal output from each port corresponds to one beam, namely a space direction or a target direction. The signal output by the chip is processed by down-conversion and the like subsequently, and then enters a baseband for signal processing.
Fig. 3 is a connection relationship diagram between a monolithic integrated transceiving common optical control beamforming network chip provided by the present invention and other parts of a phased array system when the chip is used as a transmit beamforming network. The signals of each beam formed by the baseband are input into the light-controlled beam forming network chip after the processes of up-conversion and the like. Each beam is numbered beam 1, beam 2, beam M. The signal with the beam number m enters a port 21m of the chip. The signals of each beam are subjected to electro-optical conversion, shunting, distribution, delay, attenuation, combination, photoelectric conversion and other processes in the light-controlled beam forming network chip to complete the beam forming process, and are output from the output ports 121-12N, and the signal output from each port corresponds to one antenna in the array antenna. The signals output by the chip enter the array antenna through a power amplifier and the like subsequently and are transmitted to the space.
Fig. 4 is a schematic diagram of the connection relationship between the phased array system and the present invention in the fiber remote mode. In this mode, the front end of the phased array system (antenna, rf amplification, optically controlled beamforming, etc.) is decoupled from the back end of the system (signal processing in baseband, etc., and information processing in computers, etc.) in terms of structure and spatial location. The front end is distributed at different geographical positions according to the space signal receiving and transmitting requirements, and signals are transmitted to the unified center through the optical fibers for rear end processing. Taking the receive beam forming network as an example, in this mode, the output end of the chip does not perform photoelectric conversion any more, but outputs from the 242-24M interface (after undergoing necessary optical amplification), and enters the central computer room after long-distance transmission through the optical fiber. And performing photoelectric conversion in the machine room, converting the photoelectric conversion into a radio frequency signal, and performing signal processing. The working principle and the connection relation of the transmitting phased array are the same, and the chip inlet is switched from 111-11N to 141-14N in the mode.
Fig. 5 is a schematic structural diagram of a conventional tunable optical delay line with delay and amplitude control functions. The delay amount is adjusted by a cascade switch delay line, and the light power is adjusted by a series-connected light attenuator. The delay line is composed of p optical switches and a plurality of delay lines with different lengths, and p-1 is the digit of the delay line. The delay difference between the long waveguide and the short waveguide between each two stages of switches is delta t,2 delta t, 8230, 2 delta t p-1 And delta t. The p-1 grade is connected in series, so that the methods of delta t,2 delta t,3 delta t,4 delta t, 8230, 2 delta t and 8230can be realized p Any delay steps between Δ t. The switching state is determined by the control voltage input from the right external input, and the switching state can be in a direct-current state or a cross state. The optical attenuator can realize different attenuation amounts according to the control voltage. For example, a p-i-n diode structure can be designed on a silicon waveguide, and different attenuation amounts can be realized by utilizing the free carrier absorption effect and controlling the carrier concentration through voltage to influence the refractive index of the waveguide.
The delay lines experience different delay paths under different delay amounts, and the amplitudes of the optical signals after the delay is finished are different. Traditionally, each channel needs to be combined through an attenuator before being combined in the next stepThe amplitude of the sign is adjusted to be uniform. Determining the attenuation amount of each path of attenuator is realized by the following steps: the loss values of the delay lines of each channel under different delay amounts need to be calibrated in advance. According to the number of channels and the delay gear, the states needing to calibrate the loss value are N multiplied by M multiplied by 2 p And (4) respectively. When the antenna scale (N), the beam scale (M) or the delay line bit number (p-1) of the light-operated beam forming network is large, the workload of realizing calibration is very large, and even the automatic test is very complicated. And the loss value can drift along with the temperature, the chip aging and other reasons, and the loss calibration result can frequently fail. By the design of the composite light switch, the invention not only avoids an additional optical attenuator and saves the power consumption and the area of a chip, but also omits a fussy loss calibration process.
Fig. 6 is a schematic structural diagram of the composite optical switch of the present invention. The composite optical switch is provided with 2 multi-mode interferometers (MMIs) with 2 input ports and 2 output ports, the two MMIs are connected by two optical waveguides with equal length, and one or 2 optical waveguides are provided with an optical phase shifter (in the figure, a single-arm optical phase shifter is taken as an example, and the principle of two arms is the same). The MMI and the phase shifter jointly form a Mach-Zehnder interferometer structure. And a tap coupler is respectively arranged on the upper and lower outlet waveguides behind the second MMI, and the coupler can tap a small amount of optical power to enter the photoelectric detector.
The tap optical coupler is a unidirectional structure, when the tap optical coupler is at the right side of the composite optical switch, the optical signal taps a small amount of optical power (for example, 1%) from left to right, and when the optical signal is from right to left, the tap optical coupler is transparent and can be considered to be absent. The tapped optical coupler is also transparent to signals going from right to left when it is to the left of the composite optical switch. The tap coupler and photodetector may be replaced with a contactless integrated photonic probe (Clipp) detection or the like. Because the structure of the tap coupler has directivity, the structural layout of the tap coupler and the photoelectric detector is mirror image array in the left-first and right-first composite light switches.
Figure 7 is a schematic diagram illustrating the working principle of the composite optical switch of the present invention. Take the right optical switch as an example. For purposes of description, the following definitions are made: when the signal enters from the upper left, the upper right is a straight-through outlet, and the lower right is a cross outletAnd (4) a mouth. When a signal enters from the left lower part, the upper right is a cross state outlet, and the right lower right is a straight state outlet. In FIG. 7, the control voltage of the phase shifter of the composite optical switch is V z When the phase difference value of the two arms is 0, the signal is output from the straight-through end by 100%, and is output from the cross end by 0%, and at the moment, the composite optical switch is equivalent to the straight-through state of a conventional optical switch. The composite light switch phase shifter controls the voltage to be V x When the phase difference value of the two arms is pi, the signal is output from the straight end by 0 percent and is output from the cross end by 100 percent, and at the moment, the composite optical switch is equivalent to the cross state of a conventional optical switch. The composite light switch phase shifter controls the voltage to be V i When the phase difference value of the two arms is (V) i -V z )/(V x -V z ) Pi, the ratio of signal output from the through terminal is cos 2 [(V i -V z )/(V x -V z )*π]The ratio of output from the cross terminal is sin 2 [(V i -V z )/(V x -V z )*π]The composite optical switch is equivalent to a conventional optical switch plus a conventional attenuator. For example, the input of the left upper port and the output of the right upper port are required, which is equivalent to the conventional optical switch being in a direct-on state, and the attenuator is 10lg ((cos) 2 (V i -V z )/(V x -V z )*π)dB。
As described above, in the conventional design, the attenuation values of the optical switch are set by calibrating the attenuation values of the delay line at different shift positions by the optical power meter. In the composite optical switch structure of fig. 7, such a calibration process is no longer required, and the consistency of the amplitudes of the optical signals of the channels can be automatically controlled. The principle of automatic control is as follows: the tap coupler and the photoelectric detector structure in the composite light switch at the tail end of each delay line are used as power monitoring points, so that the output optical power of each delay line after the delay is finished can be monitored. After each time of delay parameter issuing and setting, the peripheral control circuit can judge which delay line has the minimum output signal of the monitoring point (namely, the maximum delay loss). And setting the equivalent attenuation value of the delay line with the minimum monitoring signal and the final-stage composite light switch to be zero. Then respectively increasing the equivalent attenuation values of the final-stage composite optical switches of other channels, so that the output signals of monitoring points of all channels and the initial monitoringThe minimum delay line strength of the measuring signals is equal. For example, suppose that the output optical power measured by the monitoring point in the end composite optical switch after the delay of the channel is higher than the path with the minimum monitoring signal by L X dB, the equivalent attenuation value of the final-stage composite light switch of the channel is set to be L X dB. Therefore, the composite optical switch shown in fig. 7 not only omits the optical attenuator structure used for controlling the multichannel amplitude consistency in the conventional design, but also supports the multichannel amplitude automatic control. Meanwhile, the area and the power consumption are equivalent, and the composite light switch is not obviously increased compared with the conventional light switch.
The shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, and merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, the description as an example should not be made to limit the claims.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and additions can be made without departing from the principle of the present invention, and these should also be considered as the protection scope of the present invention.
Claims (6)
1. A silicon-based monolithic integrated light-operated multi-beam forming network chip for receiving and transmitting is characterized by comprising M + N electro-optical modulators, M + N photoelectric detectors, N multiplied by M adjustable light delay lines, M + N spot size converters, 2M multiplied by N test light detectors, N + M optical splitters and N + M wavelength division multiplexers, wherein N =2 k ，M＝2 j K and j are integers more than or equal to 0;
on the left side of the chip, the N electro-optical modulators and the N spot size converters are respectively and correspondingly connected with the N optical splitters, the N photoelectric detectors are correspondingly connected with the N wavelength division multiplexers, and the optical splitters and the wavelength division multiplexers are respectively connected to two ports on the left side of the adjustable optical delay line; on the right side of the chip, M wavelength division multiplexers are respectively and correspondingly connected with M photoelectric detectors and M spot size converters, M electro-optical modulators are correspondingly connected with M optical splitters, and the wavelength division multiplexers and the optical splitters are connected with two ports on the right side of the tunable optical delay line;
the electro-optic modulator or the spot-size converter is used for receiving the radio-frequency signal and sending the processed signal to the optical splitter; the optical branching device is used for equally dividing optical signals into multiple paths and then correspondingly sending the multiple paths into the adjustable optical delay lines; the tunable optical delay line is used for carrying out delay control and amplitude control on an input signal and then entering the wavelength division multiplexer; the wavelength division multiplexer is used for combining a plurality of paths of signals from different adjustable light delay lines into 1 path, and the combined signals are sent to the spot size converter to output optical signals or sent to the photoelectric detector to output radio frequency signals;
the adjustable light delay line is formed by connecting a multistage optical switch and optical waveguides with different lengths in series, and the delay amount is controlled by switching the length of a path for transmitting an optical signal; the first stage and the last stage of the tunable optical delay line are composite light switches, and each composite light switch comprises an MMI, a phase shifter, a tap optical coupler and a photoelectric detector.
2. The silicon-based monolithic integrated optically controlled multi-beam network chip for transceiving of claim 1, wherein nxm tunable optical delay lines are defined as 11, 12 \8230; \82301m, 21, 22, \8230; _ 82302M, \8230; \ 8230;, N1, N2, \8230; \8230nm, the first bit of the delay line number is N, the second bit is M, and the signal distribution is as follows: the mth port of the nth optical splitter on the left side of the chip is connected with the nth adjustable delay line, and the nth adjustable delay line is connected with the nth port of the mth wavelength division multiplexer on the right side of the chip; wherein N =1,2, \8230: \8230, N, M =1,2, \8230;, M.
3. The silicon-based monolithically integrated transceiver optical-controlled multi-beam forming network chip of claim 1, wherein N corresponds to a number of antennas supported by the chip, M corresponds to a number of beams supported by the antennas, and N and M may be equal or unequal.
4. The silicon-based monolithic integrated transceiver general optical control multi-beam forming network chip of claim 1, wherein the electro-optical modulator adopts a full silicon-based design, the waveguide structure is an SOI ridge-type optical waveguide, the optical structure body is a mach-zehnder interferometer, and the electrical structure body is a PN junction; the photoelectric detector and the test optical detector adopt waveguide type germanium-silicon-based germanium detectors, and the waveguide and the detectors are in butt coupling; the tunable optical delay line, the optical splitter and the wavelength division multiplexer adopt rectangular optical waveguides or ridge optical waveguides made of SOI materials; and (3) monolithic integration of the whole silicon-based chip.
5. The silicon-based monolithically integrated optically controlled multi-beam network chip for transceiving generally used in a transceiver of claim 1, wherein the amplitude control in the adjustable delay line is accomplished by a composite optical switch that controls attenuation values of specific output ports.
6. The silicon-based monolithically integrated transceiver generalized optical control multi-beam network chip of claim 1, wherein each electro-optical modulator inputs a laser carrier, and a frequency difference Δ f between any two carriers>>f B ，f B The highest operating frequency of the photodetector.
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| CN113885128A (en) * | 2021-09-24 | 2022-01-04 | 上海交通大学 | Silicon-based reconfigurable microwave photon multi-beam forming network chip |
| CN114024604A (en) * | 2021-12-07 | 2022-02-08 | 罗森伯格技术有限公司 | Optical module |
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| US6590644B1 (en) * | 2001-01-12 | 2003-07-08 | Ciena Corporation | Optical module calibration system |
| CN101521837A (en) * | 2009-02-24 | 2009-09-02 | 上海大学 | System and method for achieving online updating for dynamic wavelength division multiplexing passive optical network |
| US20160054431A1 (en) * | 2014-02-26 | 2016-02-25 | Shanghai Jiao Tong University | Wholly optically controlled phased array radar transmitter |
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