CN115629517A - OPC correction method - Google Patents
OPC correction method Download PDFInfo
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- CN115629517A CN115629517A CN202211390279.XA CN202211390279A CN115629517A CN 115629517 A CN115629517 A CN 115629517A CN 202211390279 A CN202211390279 A CN 202211390279A CN 115629517 A CN115629517 A CN 115629517A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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Abstract
The invention discloses an OPC correction method, which comprises the following steps: step one, OPC modeling data collection is carried out under the optimal photoetching process condition to establish a reference OPC model. And step two, carrying out OPC modeling data collection under the condition deviating from the optimal photoetching process to establish a verification OPC model. And thirdly, performing OPC correction on the original layout by adopting a reference OPC model to obtain an OPC-corrected layout. Carrying out graph simulation on the OPC-corrected layout by adopting a verification OPC model to obtain a verification simulation graph; judging whether the simulation graph is beyond the specification or not, if so, repeating the second step to perform OPC modeling data supplementary measurement; if not, the OPC model is verified to be valid. The OPC model can contain the change information of the process parameters of the photoetching process, and can still ensure the accuracy of OPC correction when the process parameters of the photoetching process change near the optimal photoetching process.
Description
Technical Field
The present invention relates to a semiconductor integrated circuit manufacturing method, and more particularly, to an Optical Proximity Correction (OPC) Correction method.
Background
With the continuous development of the wafer process technology, the feature size on the logic device node is close to or even smaller than the wavelength of light wave used in the photolithography process. According to the principles of light wave diffraction and interference: the light wave will diffract when passing through the mask plate, and the interference will occur at different positions of the mask plate. Therefore, the intensity distribution actually projected onto the wafer is the result of the superposition of these diffracted interfering light waves, which is not exactly the same as the mask pattern. This phenomenon of deviation between the lithographic pattern and the mask pattern due to diffraction and interference of light waves is called the Optical Proximity Effect (OPE). In the photoetching process, the optical proximity effect is inevitable, and the existing method adopts the OPC technology to reduce the deformation and deviation of a mask plate pattern projected to a silicon wafer pattern as much as possible so that the exposed pattern meets the design requirement.
The OPC model is generally built by collecting modeling data under conditions of optimal exposure energy and focal plane, where the optimal focal plane refers to the minimum delta [ CD ]/delta [ focus ] differential value, where delta represents the differential, CD represents the critical dimension of the pattern, and focus represents the focal length. The optimal exposure energy is the energy value which can be obtained on the selected optimal exposure focal plane and is closest to the target size. The model built under such conditions is used to correct the design layout, which only ensures the accuracy under the optimal conditions, but cannot give better predictions when the conditions change.
Disclosure of Invention
The invention aims to provide an OPC correction method, wherein an OPC model can contain the change information of the process parameters of the photoetching process, and the OPC correction accuracy can still be ensured when the process parameters of the photoetching process change near the optimal photoetching process.
In order to solve the above technical problem, the OPC correction method provided by the present invention includes the steps of:
establishing a reference OPC model, wherein the reference OPC model is obtained by carrying out OPC modeling data collection under the optimal photoetching process condition.
And step two, establishing a verification OPC model, wherein the verification OPC model is obtained by carrying out OPC modeling data collection under the condition deviating from the optimal photoetching process.
And thirdly, performing OPC correction on the original layout by adopting the reference OPC model to obtain the layout after OPC correction.
Carrying out graph simulation on the OPC-corrected layout by adopting the verification OPC model to obtain a verification simulation graph; judging whether the verification simulation graph exceeds the specification, if so, repeating the second step to perform OPC modeling data supplementary measurement under the condition deviating from the optimal photoetching process and updating the verification OPC model; if not, the verification OPC model is valid.
In a further improvement, in the first step, the optimal lithography process conditions include: the exposure dose adopts the optimal exposure dose, and the focusing plane adopts the optimal exposure focusing plane.
The best exposure focal plane refers to a focal plane having the smallest delta CD/delta focus differential value, delta denotes the differential, CD denotes the critical dimension of the pattern, and focus denotes the focal length.
The optimal exposure dose is an energy value which is closest to a target size on the selected optimal exposure focal plane.
In a further improvement, in the second step, the deviation from the optimal lithography process condition includes a first deviation from the optimal lithography process condition, and the first deviation from the optimal lithography process condition includes: the focusing plane adopts the optimal exposure focusing plane, and the exposure dose deviates from the optimal exposure dose.
And collecting OPC modeling data under the first off-optimum photoetching process condition to obtain a verification OPC model which is a first verification OPC model.
And the verification simulation graph obtained in the third step is a first verification simulation graph.
In a further improvement, in the second step, the deviation from the optimal lithography process condition includes a second deviation from the optimal lithography process condition, and the second deviation from the optimal lithography process condition includes: the focus plane deviates from the optimal exposure focus plane, and the exposure dose adopts the optimal exposure dose.
And the verification OPC model obtained by carrying out OPC modeling data collection under the second deviation optimal photoetching process condition is a second verification OPC model.
And the verification simulation graph obtained in the third step is a second verification simulation graph.
In a further improvement, in the first step, OPC modeling data is collected by design rules around layers of the original layout under the optimal lithography process conditions.
In a further improvement, in the first step, the types of graphs collected when the OPC modeling data are collected include: linearity patterns, optical proximity effect patterns, and two-dimensional patterns.
In a further improvement, in the second step, under the condition of deviating from the optimal lithography process, OPC modeling data is collected through design rules of layers surrounding the original layout.
In a further improvement, in the second step, the types of the graphs collected when the OPC modeling data are collected include: linearity patterns, optical proximity effect patterns, and two-dimensional patterns.
In a further improvement, in the second step, the deviation from the optimal lithography process condition and the deviation from the optimal lithography process condition are located within a process window of the lithography process.
In the OPC correction process, besides OPC modeling data collection is carried out under the optimal photoetching process condition so as to obtain a reference OPC model, OPC modeling data collection is carried out under the condition deviating from the optimal photoetching process condition so as to obtain a verification OPC model, the verification OPC model can simulate a graph obtained by exposing the graph of the layout after OPC correction under the condition that the process parameters of the photoetching process deviate, namely, the graph obtained by predicting the exposed graph of the layout after OPC correction when the process parameters of the photoetching process deviate can be adjusted according to the prediction, and finally, the accuracy of OPC correction can be improved. In conclusion, the OPC model established by the invention contains information of process parameter change, the corrected graph guided by the method of the invention can be very stable when the process parameter changes, and compared with the standard OPC model, the OPC model not only shortens the period of establishing the model, but also saves the time for publishing the photomask.
Drawings
The invention is described in further detail below with reference to the following figures and detailed description:
FIG. 1 is a flow chart of an OPC correction method according to an embodiment of the invention;
fig. 2 is a layout after OPC correction in the OPC correction method according to the embodiment of the present invention.
Detailed Description
FIG. 1 is a flow chart of an OPC correction method according to an embodiment of the invention; as shown in fig. 2, the layout after OPC correction in the OPC correction method according to the embodiment of the present invention is shown; the OPC correction method provided by the embodiment of the invention comprises the following steps of:
establishing a reference OPC model, wherein the reference OPC model is obtained by carrying out OPC modeling data collection under the optimal photoetching process condition.
In an embodiment of the present invention, the optimal lithography process conditions include: the exposure dose adopts the optimal exposure dose, and the focusing plane adopts the optimal exposure focusing plane.
The best exposure focal plane refers to a focal plane having the smallest delta CD/delta focus differential value, delta denotes the differential, CD denotes the critical dimension of the pattern, and focus denotes the focal length.
The optimal exposure dose is an energy value which is closest to a target size on the selected optimal exposure focal plane.
Step one corresponds to step S102 in fig. 1, and step S102 is the best exposure dose, best exposure focal plane OPC modeling data collection.
Before the first step is carried out, a step S101 is further included, and the step S101 is imported into the original OPC testmask layout. Testmask denotes the test mask. An original OPC testmask layout is required to be adopted in the collected OPC modeling data, and the original layout in the embodiment of the invention adopts the original OPC testmask layout.
In the embodiment of the invention, under the optimal photoetching process condition, OPC modeling data are collected through the design rule of each layer surrounding the original layout.
The types of graphs collected when performing OPC modeling data collection include: linearity patterns, optical proximity effect patterns, and two-dimensional patterns.
The step of collecting OPC modeling data comprises:
and carrying out exposure according to the photoetching process conditions to transfer the graph of the corresponding layer of the original layout onto the wafer. And the photoetching process condition in the first step is the optimal photoetching process condition.
And then, measuring each graph on the wafer to obtain OPC modeling data.
And step two, establishing a verification OPC model, wherein the verification OPC model is obtained by carrying out OPC modeling data collection under the condition deviating from the optimal photoetching process.
In an embodiment of the present invention, the off-optimal lithography process condition includes a first off-optimal lithography process condition, and the first off-optimal lithography process condition includes: the focus plane adopts the optimal exposure focus plane, and the exposure dose deviates from the optimal exposure dose.
And collecting OPC modeling data under the first off-optimum photoetching process condition to obtain a verification OPC model which is a first verification OPC model.
The deviating from the optimal lithography process condition further comprises a second deviating from the optimal lithography process condition, the second deviating from the optimal lithography process condition comprising: and the focus plane deviates from the optimal exposure focus plane, and the exposure dose adopts the optimal exposure dose.
And collecting OPC modeling data under the second off-optimum lithography process condition to obtain a second verification OPC model.
In step two, the step of establishing the first verification OPC model corresponds to step S103 in fig. 1, and step S103 is OPC modeling data collection of the optimal exposure focal plane, the deviation of the exposure dose.
The step of establishing said second verification OPC model corresponds to step S104 in fig. 1, step S104 being the collection of OPC modeling data for an optimum exposure dose, a deviation from the optimum exposure focal plane.
And step two, under the condition of deviating from the optimal photoetching process, collecting OPC modeling data through design rules of all layers surrounding the original layout.
In the second step, the types of the graphs collected when the OPC modeling data is collected include: linearity patterns, optical proximity effect patterns, and two-dimensional patterns.
In the second step, the deviation from the optimal photoetching process condition and the deviation from the optimal photoetching process condition are positioned in a process window of the photoetching process.
And thirdly, performing OPC correction on the original layout by adopting the reference OPC model to obtain the layout after OPC correction.
Carrying out graph simulation on the OPC-corrected layout by adopting the verification OPC model to obtain a verification simulation graph; judging whether the verification simulation graph exceeds the specification or not, if so, repeating the step two to perform OPC modeling data supplementary measurement under the condition of deviating from the optimal photoetching process condition and updating the verification OPC model; if the specification is not exceeded, the verification OPC model is valid. Step three corresponds to step S105 in fig. 1, and step S105 is whether the simulation pattern is instec? Inspec indicates that it is within specification, i.e. not out of specification, while oos indicates out of specification (out of spec). In fig. 1, if the specification is not exceeded, the determination result in step S105 is yes, in which case step S106 is performed, and step S106 is ended.
In the method of the embodiment of the invention, a simulation graph obtained by simulating the layout graph by using the reference OPC model is formed in the process of performing OPC correction on the original layout by using the reference OPC model.
And the verification simulation graph obtained by the first verification OPC model is a first verification simulation graph.
And the verification simulation graph obtained by the second verification OPC model is a second verification simulation graph.
For the graphs of the same layout, 3 simulation graphs can be obtained by adopting 3 OPC models. Judging whether the simulation graph exceeds the specification, mainly comparing the contour (contour) of the simulation graph with the Edge Position Error (EPE) of the target graph of the layout, and if the EPE exceeds the specification, indicating that the corresponding simulation graph exceeds the specification; if the EPE does not exceed the specification, the corresponding simulation graph is correct.
As shown in fig. 2, a graph 201 represents a graph of the layout after OPC correction, a graph 202 represents a target graph, an outline 203 represents an outline of a simulation graph, and EPE is a difference between the outline 203 and the graph 202.
As can be seen from the above, in the method according to the embodiment of the present invention, the reference OPC model performs OPC correction on the original layout to obtain an OPC-corrected layout, which is similar to the OPC-corrected layout obtained by the conventional OPC correction method. However, in the method of the embodiment of the present invention, by adding the first verification OPC model and the second verification OPC model, the graph obtained when the OPC-corrected layout is exposed under the condition deviating from the optimal photolithography process condition can be predicted, and whether the OPC-corrected layout is suitable for exposure under the condition deviating from the optimal photolithography process condition can be determined according to the prediction, so that the OPC correction accuracy can be improved finally.
In the OPC correction process, besides OPC modeling data collection under the optimal photoetching process condition to obtain a reference OPC model, OPC modeling data collection is also carried out under the condition deviating from the optimal photoetching process condition to obtain a verification OPC model, the verification OPC model can simulate a graph obtained by exposing the graph of the OPC-corrected layout under the condition that the process parameters of the photoetching process deviate, namely the graph obtained by predicting the exposed graph of the OPC-corrected layout under the condition that the process parameters of the photoetching process deviate, and the OPC correction parameters can be adjusted according to the prediction, so that the OPC correction accuracy can be improved finally. In summary, the OPC model established in the embodiment of the present invention includes information about process parameter changes, the corrected pattern guided by the method of the embodiment of the present invention is very stable even when the process parameters change, and compared with the standard OPC model, the OPC model not only shortens the period of establishing the model, but also saves the time for publishing the photomask.
The following embodiments of the present invention are further illustrated with reference to specific parameters:
step S102 is performed, and step S102 is used for collecting OPC modeling data of the optimal exposure dose and the optimal exposure focal plane. Namely: OPC modeling data is collected around a design rule (design rule) of a specific layer (layer) under the conditions of optimal exposure energy and a focus plane, the optimal focus plane refers to the minimum delta [ CD ]/delta [ focus ] differential value, the optimal exposure energy is an energy value which can obtain the closest target size on the selected optimal focus plane, and an OPC model established under the conditions is used as a reference OPC model. The collected graphics include: linearity graph, optical proximity effect graph and two-dimensional graph.
Step S103 is performed, and step S103 is performed to collect OPC modeling data of the deviation exposure dose for the optimal exposure focal plane. Namely: and collecting OPC modeling data around a design rule of a specific layer under the conditions of the optimum exposure focal plane and the OPC modeling data deviating from the exposure dose, wherein the optimum focal plane refers to the minimum delta [ CD ]/delta [ focus ] differential value and the OPC data deviating from the exposure dose, and the OPC model established under the conditions is used as a verification OPC model 1, namely the first verification OPC model.
Step S104 is performed, and step S104 is used for collecting OPC modeling data of the optimal exposure dose and the deviation from the optimal exposure focal plane. Namely: and collecting OPC modeling data around design rule of a specific layer under the condition of collecting the OPC modeling data of the optimal exposure dose and the optimal exposure focal plane, and taking the OPC model established under the condition as a verification OPC model 2, namely the second verification OPC model. .
Step S105 is performed, and step S105 is a simulated wafer (wafer) pattern, that is: the target pattern is corrected in the above-mentioned step S102, step S103 and step S104 to obtain 3 contours, and it is judged whether the obtained contours have an out of spec phenomenon, if so, the OPC model deviating from the optimum condition is subjected to the supplementary measurement data, and if not, it is judged that the OPC correction method by applying the deviation from the optimum condition is effective.
Taking the layout of fig. 2 as an example, the method of the embodiment of the present invention is applied to a 65nm metal layer, and the related process conditions are as shown in the following table:
watch 1
In the table, λ is the wavelength of the light source used by the lithography machine; NA is the Numerical Aperture (Numerical Aperture) of the illuminating system of the photoetching machine, and is unitless; σ _ out and σ _ in are partial coherence factor numbers of the annular illumination light source; k num is the number of convolution kernels used by the photoetching model; k grid is a numerical value of the size of the convolution kernel point; OD (Optical Diameter) is the Optical Diameter size used by the lithography model.
The following table two compares experimental data and simulation data of three key points of metal layer Critical Dimension (CD), line end shortening and square angle rounding after being corrected by an optical approximation model deviating from the optimal condition. From the specific data, the experimental values and the simulation results substantially agree. When the process parameters are changed within a certain range, the imaging of the graph is very stable, and the value fluctuation is within the specification requirement.
Watch two
In Table two, the focal plane (-0.2 μm) represents a distance of 0.2 μm less than that of the focal plane in the optimum condition; the focal plane (0.2 μm) represents a distance of 0.2 μm greater than that of the best condition;
exposure energy (+ 10%) represents 10% more than that of the optimum condition;
the exposure energy (-10%) represents 10% less than that of the optimum condition.
The exposure energy is also the exposure dose, which is the product of exposure intensity and time.
The present invention has been described in detail with reference to the specific examples, but these are not to be construed as limiting the invention. Many variations and modifications can be made by one skilled in the art without departing from the principles of the invention, which should also be considered as the scope of the invention.
Claims (9)
1. An OPC correction method is characterized by comprising the following steps:
establishing a reference OPC model, wherein the reference OPC model is obtained by carrying out OPC modeling data collection under the optimal photoetching process condition;
establishing a verification OPC model, wherein the verification OPC model is obtained by carrying out OPC modeling data collection under the condition deviating from the optimal photoetching process;
thirdly, performing OPC correction on the original layout by adopting the reference OPC model to obtain an OPC-corrected layout;
carrying out graph simulation on the OPC-corrected layout by adopting the verification OPC model to obtain a verification simulation graph; judging whether the verification simulation graph exceeds the specification, if so, repeating the second step to perform OPC modeling data supplementary measurement under the condition deviating from the optimal photoetching process and updating the verification OPC model; if the specification is not exceeded, the verification OPC model is valid.
2. The OPC correction method of claim 1, wherein: in the first step, the optimal lithography process conditions include: the exposure dose adopts the optimal exposure dose, and the focusing plane adopts the optimal exposure focusing plane;
the optimal exposure focal plane refers to a focal plane with the smallest delta CD/delta focus differential value, wherein delta represents the differential, CD represents the key size of the graph, and focus represents the focal length;
the optimal exposure dose is an energy value which is closest to a target size on the selected optimal exposure focal plane.
3. The OPC correction method of claim 2, wherein: in the second step, the off-optimal lithography process condition includes a first off-optimal lithography process condition, and the first off-optimal lithography process condition includes: the focus plane adopts the optimal exposure focus plane, and the exposure dose deviates from the optimal exposure dose;
performing OPC modeling data collection under the first off-optimum lithography process condition to obtain a verified OPC model which is a first verified OPC model;
and the verification simulation graph obtained in the third step is a first verification simulation graph.
4. The OPC correction method of claim 2 or 3, wherein: in the second step, the deviation from the optimal lithography process condition includes a second deviation from the optimal lithography process condition, and the second deviation from the optimal lithography process condition includes: the focusing plane deviates from the optimal exposure focusing plane, and the exposure dose adopts the optimal exposure dose;
performing OPC modeling data collection under the second off-optimal lithography process condition to obtain a second verification OPC model;
and the verification simulation graph obtained in the third step is a second verification simulation graph.
5. The OPC correction method of claim 1, wherein: in the first step, under the optimal photoetching process condition, OPC modeling data are collected through design rules of all layers surrounding the original layout.
6. The OPC correction method of claim 5, wherein: in the first step, the types of graphs collected when the OPC modeling data is collected include: linearity patterns, optical proximity effect patterns, and two-dimensional patterns.
7. The OPC correction method of claim 1, wherein: and step two, under the condition of deviating from the optimal photoetching process, collecting OPC modeling data through design rules of all layers surrounding the original layout.
8. The OPC correction method of claim 7, wherein: in the second step, the types of the graphs collected when the OPC modeling data is collected include: linearity patterns, optical proximity effect patterns, and two-dimensional patterns.
9. The OPC correction method of claim 1, wherein: in the second step, the deviation from the optimal photoetching process condition and the deviation from the optimal photoetching process condition are positioned in a process window of the photoetching process.
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