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CN115616277B - Monitoring circuit and monitoring system - Google Patents

Monitoring circuit and monitoring system Download PDF

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Publication number
CN115616277B
CN115616277B CN202210022743.3A CN202210022743A CN115616277B CN 115616277 B CN115616277 B CN 115616277B CN 202210022743 A CN202210022743 A CN 202210022743A CN 115616277 B CN115616277 B CN 115616277B
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magnetic field
unit
circuit
sensor
monitoring
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CN115616277A (en
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尹超
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Honor Device Co Ltd
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Honor Device Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

The application discloses a monitoring circuit and a monitoring system. The monitoring circuit is used for monitoring a circuit unit, and the circuit unit comprises a protection unit and a protected circuit. The monitoring circuit includes a monitoring unit. The monitoring unit includes a first sensor and a second sensor. The first sensor is used for being arranged on the first side of the protection unit, and the second sensor is used for being arranged on the second side of the protection unit. The first sensor is used for acquiring first magnetic field data, and the first magnetic field data is used for indicating the magnetic field direction of a magnetic field at the first sensor. The second sensor is used for acquiring second magnetic field data, and the second magnetic field data is used for indicating the magnetic field direction of the magnetic field at the second sensor. The processing unit is used for receiving the first magnetic field data and the second magnetic field data, and determining that an overcurrent event occurs in the circuit unit where the protection unit is located if the magnetic field direction indicated by the first magnetic field data is opposite to the magnetic field direction indicated by the second magnetic field data, so as to assist engineers in evaluating the rationality of the circuit design of the electronic equipment.

Description

Monitoring circuit and monitoring system
Technical Field
The present application relates to the field of hardware testing, and in particular, to a monitoring circuit and a monitoring system.
Background
An internal device of an electronic device such as a mobile phone is prone to an over-current event such as electrostatic discharge (ESD), surge, and direct current short circuit, which easily causes an electrical overstress (electrical over stress, EOS) phenomenon. It will be appreciated that when the EOS phenomenon occurs in an electronic device, there will be a risk of burnout.
The monitoring and reporting of the over-current event which easily causes EOS phenomenon such as ESD, surge and direct current short circuit can help engineers evaluate the rationality of the circuit design of the electronic equipment. For example, when an overcurrent event frequently occurs in a certain part of a circuit of an electronic device, whether the part of the circuit is unreasonable or not is considered; for another example, when the number of occurrence of the overcurrent event is large, whether the protection circuit has a sufficient protection capability or not is considered. On the basis, engineers can optimize the circuit design of the electronic equipment, so that the EOS risk is reduced, and the circuit reliability of the electronic equipment is improved. Based on the monitoring device, a set of monitoring equipment which can monitor and report over-current events which easily cause EOS phenomena such as ESD, surge and direct current short circuit is of great significance to auxiliary engineers.
Disclosure of Invention
The embodiment of the application provides a monitoring circuit and a monitoring system, which are used for monitoring and reporting over-current events which are easy to cause EOS phenomena, such as ESD, surge, direct current short circuit and the like.
In order to achieve the above purpose, the embodiment of the present application adopts the following technical scheme:
in a first aspect, the present application provides a monitoring circuit. The monitoring circuit is used for monitoring the overcurrent event of the circuit unit. The circuit unit comprises a protection unit and a protected circuit, wherein the protection unit is used for protecting the protected circuit from overcurrent. The monitoring circuit includes: and the monitoring unit is used for monitoring the protection unit in the circuit unit. The monitoring unit includes a first sensor and a second sensor. The first sensor is used for being arranged on the first side of the protection unit, and the second sensor is used for being arranged on the second side of the protection unit. The arrangement direction of the first sensor and the second sensor is perpendicular to the current path of the protection unit. The first sensor is used for acquiring first magnetic field data, and the first magnetic field data is used for indicating the magnetic field direction of a magnetic field at the first sensor. The second sensor is used for acquiring second magnetic field data, and the second magnetic field data is used for indicating the magnetic field direction of the magnetic field at the second sensor. And the processing unit is connected with the first sensor and the second sensor. The processing unit is used for receiving the first magnetic field data and the second magnetic field data, and determining that an overcurrent event occurs in the circuit unit where the protection unit is located if the magnetic field direction indicated by the first magnetic field data is opposite to the magnetic field direction indicated by the second magnetic field data.
It will be appreciated that when an overcurrent event occurs in the guard unit of the circuit unit, a large current is generated on the guard unit of the circuit unit, which generates an induced magnetic field therearound. As is known from the right-hand spiral law of ampere theorem, this large current will generate magnetic fields of opposite polarity (i.e. magnetic field direction) on both sides of the protection unit of the circuit unit. Conversely, it can be appreciated that when the magnetic fields on both sides of the protection unit of the circuit unit are opposite, an overcurrent event occurs in the protection unit of the circuit unit. Based on this, in this embodiment, the first sensor is disposed on the first side of the protection unit, and first magnetic field data that can indicate the magnetic field direction of the magnetic field generated by the protection unit on the first side thereof is collected; and a second sensor is arranged on a second side of the protection unit, and second magnetic field data which can indicate the magnetic field direction of the magnetic field generated by the protection unit on the second side of the protection unit are acquired. By analyzing the magnetic field directions indicated by the first magnetic field data and the second magnetic field data, whether the magnetic field directions on two sides of the protection unit are opposite can be judged, so that whether an overcurrent event occurs in the circuit unit where the protection unit is located can be judged.
In some embodiments of the present application, the processing unit is further configured to determine, before the processing unit determines that the circuit unit in which the protection unit is located has an overcurrent event, that the first magnetic field data and the second magnetic field data are two data within a preset duration.
It should be noted that, when a rotating magnetic field interference source exists outside the monitoring circuit, the first sensor and the second sensor upload the first magnetic field data and the second magnetic field data with opposite indication magnetic field directions, so that misjudgment occurs in the monitoring circuit. In order to provide monitoring accuracy, in this embodiment, when the magnetic field direction indicated by the first magnetic field data is opposite to the magnetic field direction indicated by the second magnetic field data, whether the first magnetic field data and the second magnetic field data are two data within a preset duration is further determined, and when both conditions are met, an overcurrent event is determined to occur in the circuit unit where the protection unit is located.
It will be appreciated that when a rotating magnetic field interference source is present outside the monitoring circuit, the first magnetic field data collected by the first sensor and the second magnetic field data collected by the second sensor are separated by a relatively long time, and when an overcurrent event occurs in the protection unit, the first magnetic field data collected by the first sensor and the second magnetic field data collected by the second sensor are separated by a relatively short time, which is typically determined by the processing time of the first sensor and the second sensor, and are typically two data on the order of microseconds. Therefore, by setting the preset duration to be a value of microsecond magnitude and distinguishing the first magnetic field data from the second magnetic field data, the overcurrent event of the circuit unit where the protection unit is located can be accurately judged.
Optionally, the acquisition time difference of the first magnetic field data and the second magnetic field data is within a preset time period.
Optionally, the first magnetic field data and the second magnetic field data are two data received by the processing unit within a preset time period.
In some embodiments of the application, the circuit unit is a plurality of. The monitoring units are multiple. The protected circuit includes at least one protected port. The single circuit unit includes at least one protection unit. A protection unit is used for overcurrent protection of a protected port. A monitoring unit is used for monitoring a protection unit of a circuit unit. The processing unit is connected with the first sensor and the second sensor of each monitoring unit. The processing unit is also used for determining the circuit unit where the protection unit corresponding to the target monitoring unit is located as the occurrence position of the overcurrent event; and outputs the occurrence position of the overcurrent event. The target monitoring unit is a monitoring unit with the magnetic field direction indicated by the first magnetic field data acquired by the first sensor and the magnetic field direction indicated by the second magnetic field data acquired by the second sensor in the plurality of monitoring units opposite to each other.
When a plurality of circuit units need to be monitored, the processing unit is used for determining and outputting the occurrence positions of the current events, so that engineers can accurately know the specific occurrence positions of the overcurrent events.
Illustratively, the first sensor and the second sensor are each hall sensors.
In a second aspect, the application also provides a monitoring system. The monitoring system includes: a circuit unit, and a monitoring circuit as claimed in any one of the first aspects. The circuit unit comprises a protection unit and a protected circuit, wherein the protection unit is used for protecting the protected circuit from overcurrent. The monitoring circuit is used for monitoring the protection unit in the circuit unit.
Illustratively, the protection unit is a TVS diode or a zener diode.
Specifically, the cathode of the protection unit is connected with the protected port of the protected circuit, and the anode of the protection unit is connected with the grounding end of the protected circuit.
It will be appreciated that the monitoring system provided in the second aspect is associated with the monitoring circuit provided in the first aspect, and thus the advantages achieved by the monitoring system are referred to the advantages of the monitoring circuit provided in the first aspect and are not described herein.
Drawings
Fig. 1 is a schematic structural diagram of a monitoring system according to an embodiment of the present application;
fig. 2 is a schematic diagram of an operating principle of a hall sensor according to an embodiment of the present application;
fig. 3 is a schematic view of a scenario of a monitoring system according to an embodiment of the present application;
Fig. 4 is a diagram illustrating a planar routing distribution of a protection unit of a first circuit unit according to an embodiment of the present application;
fig. 5 is a diagram illustrating a three-dimensional wiring distribution of a protection unit of a first circuit unit according to an embodiment of the present application;
fig. 6 is a flowchart of a processing unit determining an overcurrent event according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings.
Hereinafter, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may explicitly or implicitly include one or more such feature. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.
An overcurrent event, such as an electrostatic discharge (ESD), a surge, or a direct current short circuit, which easily causes an electrical overstress (electrical over stress, EOS) phenomenon, easily occurs in electronic devices such as a mobile phone. It will be appreciated that when the EOS phenomenon occurs in an electronic device, there will be a risk of burnout. Based on the method, the over-current event which is easy to cause EOS phenomenon such as ESD, surge and direct current short circuit is monitored and reported, and engineers can be helped to evaluate the rationality of circuit design of electronic equipment. For example, when an overcurrent event frequently occurs in a certain part of a circuit of an electronic device, whether the part of the circuit is unreasonable or not is considered; as another example, when a portion of the circuitry of the electronic device is not susceptible to an over-current event, consider whether the portion of the circuitry is redundant; for another example, when the number of occurrence of the overcurrent event is large, whether the protection circuit has a sufficient protection capability or not is considered. On the basis, engineers can optimize the circuit design of the electronic equipment, so that the EOS risk is reduced, and the circuit reliability of the electronic equipment is improved.
Based on the above, the embodiment of the application provides a monitoring system. The monitoring system may be used to monitor whether an over-current event has occurred within the electronic device to provide assistance data for engineers optimizing the circuit design of the electronic device.
Fig. 1 is a schematic structural diagram of a monitoring system according to an embodiment of the present application. The monitoring system 00 includes a circuit board. The circuit board may be understood as a printed circuit board (printed circuit board, PCB) integrated with electronic components inside the monitored electronic device. The circuit board includes at least one circuit unit.
For convenience of understanding, the circuit board in the embodiment of the present application will be described by taking two circuit units including the first circuit unit 10 and the second circuit unit 20 as examples. It should be appreciated that in other embodiments, the circuit board may also include more or fewer circuit elements, as embodiments of the application are not specifically limited in this regard. In addition, the implementation of other circuit units is similar to the first circuit unit 10, and may be adaptively referred to, and will not be described herein.
Wherein the first circuit unit 10 comprises a protected circuit. It should be noted that any independently formed functional component of the electronic device may be regarded as the protected circuit herein. It should be understood that the functional components of the electronic device refer to components of the electronic device that are required to perform a certain function, based on which one independently formed functional component may be integrated by a plurality of electronic components. Illustratively, an integrated circuit (integrated circuit, IC) chip may be considered as a separately formed functional component; a board-to-board (B2B) connector may also be considered as a separately formed functional component; a sensor can be considered as an independently formed functional component.
In order to avoid the damage of the protected circuit due to the large current of the over-current event, the first circuit unit 10 further includes a protection unit for over-current protection of the protected circuit.
IN the implementation process, the first end IN1 of the protection unit is connected to a protected port of the protected circuit (a port having a risk of occurrence of an overcurrent event IN the ports of the protected circuit), and the second end IN2 of the protection unit may be connected to a ground terminal of the protected circuit. The protection unit is turned on when an overcurrent event occurs, and is turned off when the overcurrent event does not occur (i.e., a normal operating state). Specifically, when an overcurrent event occurs, the protection unit is turned on and presents a low-resistance state, and a large current when the overcurrent event occurs is discharged from a path where the protection unit with low impedance is located to the ground, but does not enter a path where the protected circuit with high impedance is located from a protected port of the protected circuit and then is discharged to the ground, so that the large current can be prevented from flowing into the inside of the protected circuit, and damage to the internal circuit of the protected circuit is avoided. When the protection unit is in a normal working state, the protection unit is closed and presents a high-resistance state, and a current signal in the normal working state flows into a passage where the protected circuit with low impedance is located through a protected port of the protected circuit, but does not flow into the passage where the protection unit with high impedance is located, so that the normal working of the protected circuit can be ensured.
The protection unit capable of providing the above protection function may be a TVS diode or a zener diode, for example. Of course, with the development of electronic technology, more electronic devices having similar functions may also appear, and thus, the model of the protection unit is not particularly limited here. Taking a TVS diode as an example, IN order to provide the above functions, the cathode of the TVS diode is used as the first end IN1 of the protection unit and is connected with the protected port of the protected circuit; the anode of the TVS diode is used as the second end IN2 of the protection unit and is connected with the grounding end of the protected circuit.
The embodiment shown in fig. 1 illustrates an example in which the first circuit unit 10 includes only one protection unit, and the protection unit protects only one protected port of the protected circuit. It should be noted that an over-current event may occur at multiple ports of the protected circuit. Illustratively, the protected circuit has one or more signal terminals connected to signal terminals of the protected circuits of the other circuit units to transfer data, and a power supply terminal connected to an output terminal of the power supply module to obtain a power supply voltage. In some cases, when the signal end and the power end of the protected circuit are exposed, the ports are all at risk of ESD event, and can be regarded as the protected ports requiring over-current protection. It should be understood that the protected port may be a power terminal of the protected circuit or a signal terminal of the protected circuit.
In some embodiments, all of the protected ports of the protected circuit may be over-current protected in common using one protection unit. In this case, the first circuit unit 10 may include only one protection unit. The first end IN1 of the protection unit is connected with all the protected ports of the protected circuit, and the second end IN2 of the protection unit is connected with the grounding end of the protected unit.
In other embodiments, one protected port of the protected circuit is over-current protected using one protection unit. At this time, the first circuit unit 10 includes a number of guard units corresponding to the number of guard ports. Wherein, a protection unit is used for the protection of a protected port. IN this case, for any group of protection units and protected ports, the first end IN1 of the protection unit is connected to the protected port, and the second end IN2 of the protection unit is connected to the ground of the protected unit.
Based on this, in other embodiments, the first circuit unit 10 may further include more protection units, which is not limited in detail in the embodiment of the present application.
The above description has been given of the specific implementation of the first circuit unit 10. Similarly, the implementation of the second circuit unit 20 is the same as that of the first circuit unit 10, and reference may be made to the implementation of the first circuit unit 10, which is not repeated here.
In order to monitor the overcurrent event of each circuit unit in the circuit board, the monitoring system 00 further includes a monitoring circuit 01. Based on this, the embodiment of the application also provides a monitoring circuit 01. It should be noted that, the monitoring circuit 01 may be manufactured and sold separately from the circuit board molding, in which case the monitoring circuit 01 may monitor the temporary composition monitoring system 00 during the stage of testing the circuit board of the electronic device and the circuit board of the electronic device. Of course, the monitoring circuit 01 may also be integrated directly into the circuit board, manufactured and sold together with the circuit board, in which case the monitoring circuit 01 is regarded as a part of the circuit board, the circuit board containing the monitoring circuit 01 constituting the above-mentioned monitoring system 00. The embodiment of the present application does not specifically limit the specific form of the monitoring circuit 01. In order to facilitate understanding of the monitoring principle of the monitoring circuit 01, the monitoring circuit 01 is shown in the monitoring system 00 shown in fig. 1, so that the following embodiments still illustrate the monitoring circuit 01 provided by the embodiment of the present application with fig. 1, and no separate illustration of the monitoring circuit 01 is provided.
With continued reference to fig. 1, it can be seen that the monitoring circuit 01 includes two monitoring units, namely a first monitoring unit 30 and a second monitoring unit 40. The first monitoring unit 30 is used for monitoring the protection unit in the first circuit unit 10. The second monitoring unit 40 is used for monitoring the protection units in the second circuit unit 20.
It should be appreciated that in other embodiments, as the circuit units disposed on the circuit board, and the number of guard units in each circuit unit, increase or decrease, the number of guard units on the circuit board that need to be monitored may also increase or decrease accordingly. Accordingly, the monitoring circuit 01 may further be provided with a greater or lesser number of monitoring units corresponding to the protection units one by one, which is not particularly limited in the embodiment of the present application. In this case, one monitoring unit is applied to the monitoring of one protection unit in one circuit unit.
Wherein the first monitoring unit 30 comprises a first sensor and a second sensor. The first sensor and the second sensor are distributed on both sides of the protection unit of the first circuit unit 10 during the monitoring. With the current direction on the current path of the protection unit of the first circuit unit 10 (i.e., the path through which the current passes when flowing through the protection unit) being the S direction indicated by the solid line with an arrow in the drawing, the two sides of the protection unit of the first circuit unit 10 refer to the two sides of the protection unit of the first circuit unit 10 in the direction perpendicular to the S direction. Taking two sides of the protection unit of the first circuit unit 10 as a first side and a second side of the protection unit of the first circuit unit 10 as an example, the first sensor is disposed on the first side of the protection unit of the first circuit unit 10, and the second sensor is disposed on the second side of the protection unit of the first circuit unit 10, in which case the arrangement direction of the first sensor and the second sensor is perpendicular to the S direction.
The first sensor is used for acquiring first magnetic field data, and the first magnetic field data are used for indicating the magnetic field direction of a magnetic field at the first sensor. The second sensor is used for acquiring second magnetic field data, and the second magnetic field data is used for indicating the magnetic field direction of the magnetic field at the second sensor.
It should be appreciated that when an overcurrent event occurs in the guard unit of the first circuit unit 10, a large current is generated on the guard unit of the first circuit unit 10, and the large current generates an induced magnetic field therearound. As is known from the right-hand spiral law of ampere theorem, this large current will generate magnetic fields of opposite polarity (i.e., magnetic field direction) on both sides of the guard element of the first circuit element 10. Conversely, it will be appreciated that when the magnetic fields on both sides of the protection unit of the first circuit unit 10 are opposite, an overcurrent event occurs in the protection unit of the first circuit unit 10.
Based on this, in the present embodiment, the first sensor is disposed on the first side of the protection unit of the first circuit unit 10, and the first magnetic field data that can indicate the magnetic field direction of the magnetic field generated by the protection unit of the first circuit unit 10 on the first side is collected; and a second sensor is disposed at a second side of the shielding unit of the first circuit unit 10 to collect second magnetic field data that can indicate a magnetic field direction of a magnetic field generated by the shielding unit of the first circuit unit 10 at the second side. By analyzing the magnetic field directions indicated by the first magnetic field data and the second magnetic field data, it can be determined whether the magnetic field directions of the two sides of the protection unit of the first circuit unit 10 are opposite, so as to determine whether an overcurrent event occurs in the first circuit unit 10 where the protection unit monitored by the first monitoring unit 30 is located.
In a specific implementation process, the first sensor and the second sensor may be hall sensors. Referring to fig. 2, fig. 2 is a schematic diagram illustrating an operating principle of the hall sensor according to the application embodiment. The hall sensor can be used for measuring the magnetic field intensity and the magnetic field direction of a magnetic field (namely a measured magnetic field), and the working principle of the hall sensor is explained below.
The hall sensor has a structure of a semiconductor thin sheet. When a magnetic field of magnetic field strength B passes through the semiconductor sheet in the thickness direction thereof, the bias current I will pass through the hall sensor from point M to point N by passing the bias current I across the semiconductor sheet. Under the action of Lorentz force, the electron flow of bias current I is shifted to one side when passing through the Hall sensor, so that the Hall sensor generates potential difference in the arrangement direction of C point and D point, namely Hall voltage U H
For a given hall device, when the bias current I is fixed, the hall voltage U H Will depend entirely on the magnetic field strength B of the magnetic field to be measured, hall voltage U H The value of (B) is changed along with the change of the magnetic field intensity B, and the Hall voltage U H The positive and negative of (a) are changed along with the change of the direction of the magnetic field to be measured. It can be seen that the Hall voltage U H The magnetic field direction of the magnetic field in which the hall sensor is located can be indicated.
Based on this, by providing one hall sensor on each side of the protection unit of the first circuit unit 10 in the present embodiment, so that the magnetic field generated by the protection unit of the first circuit unit 10 passes through perpendicular to the thickness direction of the hall sensor, the hall voltage U generated by the hall sensor in the magnetic field can be obtained H . Based on the Hall voltage U H The magnetic field direction of the magnetic field generated by the shielding unit of the first circuit unit 10 on both sides thereof can be obtained.
According to the formula of magnetic induction intensityB=u 0 * The i/2 pi r formula shows that B is the magnetic induction intensity; u (u) 0 Is vacuum magnetic permeability, its value is 4pi.10 -7 The method comprises the steps of carrying out a first treatment on the surface of the i is the current of the current conductor generating the magnetic field, in this embodiment the current conductor is the protection unit of the first circuit unit 10; r is the distance between the induced magnetic field and the current conductor, in this embodiment the distance between the hall sensor and the protection unit of the first circuit unit 10. It can be seen that as r is greater, B is smaller. Based on this, in order to improve the detection sensitivity of the hall sensor, the hall sensor should be as close to the protection unit of the first circuit unit 10 as possible. In a specific implementation process, the distance between the hall sensor and the protection unit of the first circuit unit 10 may not exceed 5mm (i.e., the first preset distance and the second preset distance). Of course, the sensitivities of the different hall sensors differ, as do the upper limit values of the distances between the hall sensors and the protection units of the first circuit unit 10. In addition, as the technology of the hall sensor improves, the sensitivity of the hall sensor becomes higher, and the interval between the hall sensor and the protection unit of the first circuit unit 10 can also be larger. Based on this, the upper limit value of the interval between the hall sensor and the protection unit of the first circuit unit 10 is not particularly limited in the embodiment of the present application.
In other embodiments, the first sensor and the second sensor may be other sensors that may implement the data acquisition function, which is not limited in particular in the embodiments of the present application.
It should be noted that, the first monitoring unit 30 is taken as an example to describe the specific implementation of the monitoring unit. In other embodiments, when the monitoring circuit 01 includes more monitoring units, the specific implementation of the monitoring units on the corresponding protection units may refer to the specific implementation of the first monitoring unit 30, and the embodiments of the present application are not repeated.
In order to determine whether an overcurrent event occurs in the first circuit unit 10 where the protection unit is located according to the data collected by the first monitoring unit 30, the monitoring circuit 01 shown in fig. 1 further includes a processing unit 50.
Wherein the processing unit 50 is connected to the first sensor and the second sensor of the first monitoring unit 30, and is configured to receive the first magnetic field data from the first sensor and the second magnetic field data from the second sensor of the first monitoring unit 30; after receiving the first magnetic field data and the second magnetic field data, analyzing the magnetic field directions indicated by the first magnetic field data and the second magnetic field data, and if the magnetic field directions indicated by the first magnetic field data are opposite to the magnetic field directions indicated by the second magnetic field data, determining that an overcurrent event occurs in the first circuit unit 10 where the protection unit is located; if the protection unit is the same, it is determined that the first circuit unit 10 where the protection unit is located has no overcurrent event.
In addition, in order to determine whether an overcurrent event occurs in the second circuit unit 20 where the protection unit is located according to the data collected by the second monitoring unit 40, the processing unit 50 shown in fig. 1 is further connected to the first sensor and the second sensor of the second monitoring unit 40, and is configured to receive the first magnetic field data of the first sensor and the second magnetic field data of the second sensor from the second monitoring unit 40, and determine whether an overcurrent event occurs in the second circuit unit 20 according to the first magnetic field data of the first sensor and the second magnetic field data of the second sensor of the second monitoring unit 40, and the specific determination process may refer to the related content of the first monitoring unit 30, which is not described herein.
It will be appreciated that when the monitoring circuit 01 in fig. 1 is integrated on a circuit board, the processing unit 50 here may multiplex the processors of the circuit board. Illustratively, the processing unit 50 may multiplex the AP processors on the circuit board, thus saving circuit board space overhead and cost overhead associated with separately providing the processing unit 50.
Illustratively, the processing unit 50 is an AP processor, which includes n GPIO terminals GPIO [1] to GPIO [ n ]. One of the GPIO terminals (for example GPIO 1) of the AP processor is connected to an output terminal of the first sensor (for example, the first sensor is a hall sensor, and the output terminal is an output terminal of a hall voltage of the hall sensor) of the first monitoring unit 30; the other GPIO terminal (e.g., GPIO 2) of the AP processor is connected to the output terminal of the second sensor (in the example of the second sensor being a hall sensor, the output terminal is the output terminal of the hall voltage of the hall sensor) of the first monitoring unit 30. The other GPIO terminal (for example GPIO 1) of the AP processor is connected to the output terminal (for example, the output terminal is the output terminal of the hall voltage of the hall sensor) of the second monitoring unit 40; the other GPIO terminal (e.g., GPIO 2) of the AP processor is connected to the output terminal of the second sensor (in the example of the second sensor being a hall sensor, the output terminal is the output terminal of the hall voltage of the hall sensor) of the second monitoring unit 40.
For convenience of understanding, the process of determining the occurrence of the overcurrent event by the AP processor will be exemplarily described with reference to table 1 and table 2 by connecting the GPIO 1 to the output of the first sensor of the first monitoring unit 30, the GPIO 2 to the output of the second sensor of the first monitoring unit 30, the GPIO 3 to the output of the first sensor of the second monitoring unit 40, and the GPIO 4 to the output of the second sensor of the second monitoring unit 40. First, in tables 1 and 2, the magnetic field N indicates that the magnetic field direction is perpendicular to the paper surface and the magnetic field S indicates that the magnetic field direction is perpendicular to the paper surface and is outward. The sensor reports "10" when the magnetic field direction is magnetic field N, and "01" when the magnetic field direction is magnetic field S.
Table 1: reported values of the first sensor and the second sensor of the first monitoring unit 30
Table 2: reported values of the first sensor and the second sensor of the second monitoring unit 40
The reported values in tables 1 and 2 may be understood as values of fields indicating the magnetic field direction in the first magnetic field data and the second magnetic field data.
In Table 1, after receiving the first magnetic field data reported by GPIO [1] and the second magnetic field data reported by GPIO [2], the processing unit 50 extracts and analyzes the values of the fields indicating the magnetic field direction in the first magnetic field data and the second magnetic field data, thereby obtaining the reported values of GPIOs [ 1-2 ]. If the reported value of GPIO [ 1-2 ] is "0110" or "1001" in Table 1, it indicates that the first circuit unit 10 has an overcurrent event; if the reported value of GPIO [ 1-2 ] is "1010" or "0101" in Table 1, it indicates that the first monitoring unit 30 has magnetic field interference.
In Table 2, after receiving the first magnetic field data reported by GPIO 3 and the second magnetic field data reported by GPIO 4, the processing unit 50 extracts and analyzes the values of the fields indicating the magnetic field direction in the first magnetic field data and the second magnetic field data, thereby obtaining the reported values of GPIOs 3 to 4. If the reported value of GPIO [ 3-4 ] is "0110" or "1001" in Table 2, it indicates that the protection unit of the second circuit unit 20 has an over-current event; if the reported value of GPIO 3-4 is "1010" or "0101" in Table 2, it indicates that the second monitoring unit 40 has magnetic field interference.
It should be noted that, in other embodiments, when the monitoring circuit 01 has more monitoring units to monitor more protection units on the circuit board, the processing unit 50 connects the first sensor and the second sensor of each of the monitoring units, and determines whether an overcurrent event occurs in the corresponding circuit unit according to the data collected by the monitoring units. The specific determination process may refer to the relevant content of the first monitoring unit 30, which is not described herein.
As can be seen from the above, the circuit board includes two circuit units, namely, the first circuit unit 10 and the second circuit unit 20. In other embodiments, it is also possible to have more circuit elements on the circuit board. In order to help the engineer accurately know the specific occurrence position of the over-current event, the processing unit 50 may further output the occurrence position of the over-current event, which is specifically as follows:
The processing unit 50 is further configured to determine a target monitoring unit according to the first magnetic field data and the second magnetic field data uploaded by each monitoring unit. The target monitoring unit is a monitoring unit with the magnetic field direction indicated by the first magnetic field data acquired by a first sensor in the plurality of monitoring units and the magnetic field direction indicated by the second magnetic field data acquired by a second sensor opposite to each other. And then, the circuit unit where the protection unit monitored by the target monitoring unit is located is used as the occurrence position of the overcurrent event to be output.
For the embodiment shown in fig. 1, when the first magnetic field data uploaded by the first sensor and the second sensor of the first monitoring unit 30 and the magnetic field direction indicated by the second magnetic field data are opposite, the first monitoring unit 30 is the target monitoring unit. The processing unit 50 outputs the first circuit unit 10 where the protection unit monitored by the first monitoring unit 30 is located as an occurrence position of the overcurrent event.
When the first magnetic field data uploaded by the first sensor and the second sensor of the second monitoring unit 40 are opposite to the magnetic field direction indicated by the second magnetic field data, the second monitoring unit 40 is the target monitoring unit. The processing unit 50 outputs the second circuit unit 20 where the protection unit monitored by the second monitoring unit 40 is located as an occurrence position of the overcurrent event.
Continuing with the example above, the reported values for GPIO [1] and GPIO [2] are from the first monitoring unit 30 and the reported values for GPIO [3] and GPIO [4] are from the second monitoring unit 40. Therefore, GPIO [1] and GPIO [2] correspond to the first circuit unit 10, and GPIO [3] and GPIO [4] correspond to the second circuit unit 20. Based on this, in the implementation process, if the AP processor analyzes the first magnetic field data from the GPIO [1] and the second magnetic field data from the GPIO [2] and determines that the indicated magnetic field directions are opposite, the AP processor may determine the first circuit unit 10 corresponding to the GPIO [1] and the GPIO [2] as the occurrence position of the overcurrent event. If the AP processor analyzes the first magnetic field data from GPIO 3 and the second magnetic field data from GPIO 4 and determines that the indicated magnetic fields are opposite, the AP processor may determine the second circuit unit 20 corresponding to GPIO 3 and GPIO 4 as the occurrence position of the overcurrent event. Further, in some embodiments of the present application, the processing unit 50 may be further configured to record the occurrence time of the overcurrent event when determining the occurrence of the overcurrent event, so as to count the frequency, the period, etc. of the overcurrent event at a later stage.
It should be noted that, an external magnetic field interference source, such as a microphone in operation, may cover the first sensor and the second sensor of a certain monitoring unit with the magnetic field generated by the external magnetic field interference source. Typically, the magnetic field disturbance source is typically located on the same side of the first sensor and the second sensor of the monitoring unit. The right-hand spiral rule according to the ampere theorem indicates that magnetic field interference sources located on the same side of the first sensor and the second sensor generate magnetic fields in the same direction at the first sensor and the second sensor. Therefore, in this embodiment, when the directions of the magnetic fields indicated by the first magnetic field data and the second magnetic field data are opposite, the occurrence of the overcurrent event is determined, so that the interference of the external magnetic field interference source on the processing unit for judging the overcurrent event can be basically eliminated.
It should be understood that referring to fig. 3, fig. 3 is a schematic view of a monitoring system according to an embodiment of the present application. The current direction of the magnetic field interference source is assumed to be upward in the figure. As shown in fig. 3 (a), the magnetic field disturbance source is located at the position shown in fig. 3 (a) at time T1, and the magnetic field generated by the magnetic field disturbance source may cover the first sensor but cannot cover the second sensor, in which case the magnetic field disturbance source will generate a magnetic field with a magnetic field direction perpendicular to the inward direction of the screen at the first sensor. As shown in fig. 3 (b), the magnetic field disturbance source is located at the position shown in fig. 3 (b) at time T2, and the magnetic field generated by the magnetic field disturbance source may cover the second sensor but cannot cover the first sensor, in which case the magnetic field disturbance source will generate a magnetic field with a magnetic field direction perpendicular to the picture outside at the second sensor. It can be seen that in this scenario, the processing unit 50 may also receive first magnetic field data and second magnetic field data that are able to indicate that the magnetic field directions are opposite, so that a false positive will occur.
It should be appreciated that in the scenario shown in fig. 3, the first magnetic field data acquired by the first sensor and the second magnetic field data acquired by the second sensor are separated by a longer period of time. When the protection unit generates an overcurrent event, the interval time between the first magnetic field data collected by the first sensor and the second magnetic field data collected by the second sensor is very short, and the interval time is usually determined by the processing time of the first sensor and the second sensor, and is usually two data in microsecond magnitude.
Based on this, in order to reduce the false positive rate and improve the monitoring accuracy, the processing unit 50 is configured to determine that the first magnetic field data and the second magnetic field data are two data within a preset duration before the processing unit determines that the circuit unit where the protection unit is located has an overcurrent event. In other words, the processing unit 50 is configured to determine that the circuit unit corresponding to the monitoring unit has an overcurrent event when the magnetic field direction indicated by the first magnetic field data and the magnetic field direction indicated by the second magnetic field data are opposite, and the first magnetic field data and the second data are two data within a preset duration (set to be in the order of microseconds) in the order of microseconds.
In some embodiments of the present application, to facilitate the processing unit 50 determining whether the first magnetic field data and the second data are two data within a preset time period, the processing unit 50 may determine whether the first magnetic field data and the second data are two data within the preset time period based on a difference between the time of receipt of the first magnetic field data and the time of receipt of the second magnetic field data. If the first magnetic field data and the second magnetic field data are two data received by the processing unit 50 within the preset time period, that is, the difference between the receiving time of the first magnetic field data and the receiving time of the second magnetic field data is within the preset time period, the first magnetic field data and the second data are two data within the preset time period; if not, the first magnetic field data and the second data are not the two data within the preset time period.
In an implementation, the processing unit 50 may generate a first time when the first magnetic field data is received and a second time when the second magnetic field data is received. The first time and the second time may be respectively conditioned in fields of the first magnetic field data and the second magnetic field data, or may be stored separately. By determining whether the difference between the first time and the second time is within the preset time period, it may be determined whether the first magnetic field data and the second magnetic field data are two data received by the processing unit 50 within the preset time period.
In other embodiments of the present application, to facilitate the processing unit 50 determining whether the first magnetic field data and the second data are two data within a preset time period, the first magnetic field data is further used to indicate the acquisition time of the first magnetic field data, and the second magnetic field data is further used to indicate the acquisition time of the second magnetic field data. The processing unit 50 determines whether the first magnetic field data and the second magnetic field data are two data within a preset period by judging whether the difference between the acquisition time shown by the first magnetic field data and the acquisition time indicated by the second magnetic field data is within the preset period. The difference between the acquisition time shown by the first magnetic field data and the acquisition time indicated by the second magnetic field data (namely, the acquisition time difference between the first magnetic field data and the second magnetic field data) is within a preset duration, and the first magnetic field data and the second magnetic field data are two data within the preset duration; if not, the first magnetic field data and the second data are not the two data within the preset time period.
In the implementation process, the first sensor can add the acquisition time in the field of the generated first magnetic field data in the acquisition process, and the second sensor can add the acquisition time in the field of the generated second magnetic field data in the acquisition process. As such, the first magnetic field data and the second magnetic field data may be indicative of an acquisition time.
The above describes how to eliminate the interference of the external magnetic field interference source to the judgment process of the overcurrent event. The following describes the distribution of the wiring and devices of the circuit board itself as an interference in the determination of the overcurrent event.
It will be appreciated that the distribution of the lines and devices on the circuit board is intricate and thus, the following lines or devices are unavoidable: the current direction of current when this circuit or device flows through is opposite with the current direction on the protection unit, forms the magnetic field that offset each other with the heavy current when the protection unit carries out the overcurrent protection for first sensor and second sensor can't monitor the emergence of overcurrent event, thereby lead to leaking the judgement, reduce the monitoring precision. In view of this, when the lines and devices on the circuit board are designed in a distributed manner, among the current paths provided by the lines and devices, the current paths having the current direction opposite to that of the protection unit should be avoided as much as possible from being close to the protection unit.
For example, taking the protection unit of the first circuit unit 10 as an example, the current direction of the current path s+ connected to the second end IN2 of the protection unit and the current direction of the current path S-connected to the first end IN1 of the protection unit may not be opposite to the current direction of the protection unit when the protection unit is wired. It should be understood that in this embodiment, the current path s+ may be: a path from the second end IN2 of the protection unit to the reference ground of the circuit board (for zero potential reference, usually large-area copper plating); the current path S-may be: a path from the first end IN1 of the protection unit to the output end of the power module, or a path from the first end IN1 of the protection unit to the signal end of the protected circuit of the other circuit unit.
For example, fig. 4 is a diagram illustrating a planar wiring distribution of the protection unit of the first circuit unit 10. The current path s+ connected to the second end IN2 of the protection unit, the current path S-connected to the first end IN1 of the protection unit, and the current path of the protection unit are IN the same plane IN this figure, which can be understood as being located IN the same layer of the circuit board. Here, (a) IN fig. 4 to (d) IN fig. 4 illustrate four planar distribution examples IN which the current direction of the current path s+ to which the second end IN2 of the protection unit of the first circuit unit 10 is connected (s+ direction indicated by the solid line with an arrow IN the drawing) and the current direction of the current path S-to which the first end IN1 of the protection unit is connected (S-direction indicated by the solid line with an arrow IN the drawing) are not opposite to the current direction of the protection unit (S direction indicated by the solid line with an arrow IN the drawing). Of course, in other embodiments, other planar distribution manners are also possible, which are not particularly limited by the embodiments of the present application.
As another example, fig. 5 is a three-dimensional wiring distribution example of the protection unit of the first circuit unit 10. The drawing can be understood as a sectional view of the circuit board taken along the thickness direction. IN this figure, the current path s+ connected to the second end IN2 of the protection unit and the protection unit is located IN the same layer of the circuit board, i.e. IN the same plane, and the current path S-connected to the first end IN1 of the protection unit is located IN other layers of the circuit board.
As IN (a) of fig. 5, the current direction of the current path S-to which the first end IN1 of the protection unit is connected (S-direction indicated by the solid line with the arrow IN the figure), the current direction of the current path s+ to which the second end IN2 of the protection unit is connected (s+ direction indicated by the solid line with the arrow IN the figure), and the current direction of the protection unit (S direction indicated by the solid line with the arrow IN the figure) are all the same, and thus there is no magnetic field cancellation.
IN the above example, when the current direction of the current path S-connected to the first end IN1 of the protection unit is inevitably opposite to the current direction of the current path s+ connected to the second end IN2 of the protection unit, the current path S-connected to the first end IN1 of the protection unit may be located as far from the current path s+ connected to the second end IN2 of the protection unit as possible. An exemplary explanation is given below with reference to fig. 5 (b).
As shown IN (b) of fig. 5, the current direction of the current path s+ to which the second end IN2 of the protection unit is connected (s+ direction indicated by the solid line with an arrow IN the drawing) and the current direction of the protection unit (S direction indicated by the solid line with an arrow IN the drawing) are the same, but the current direction of the current path S-to which the first end IN1 of the protection unit is connected (S-direction indicated by the solid line with an arrow IN the drawing) is opposite to the current direction of the protection unit (S direction indicated by the solid line with an arrow IN the drawing), IN which case the current path S-to which the first end IN1 of the protection unit is connected can be disposed IN a layer farther from the current path s+ to which the second end IN2 of the protection unit is connected on the circuit board on the basis of (a) of fig. 5.
The above example has been described taking the routing of the protection unit of the first circuit unit 10 as an example. It will be appreciated that, of the current paths provided by the lines and devices, current paths having a direction opposite to the direction of the current of the protection unit are also possible to be provided by other lines and devices on the circuit board. These lines and devices may be located on the same layer of the circuit board as the protection unit or may be located on different layers. When these wires and devices are provided, a distance is maintained as much as possible from the current path of the protection unit in the longitudinal direction (the thickness direction of the circuit board) and the transverse direction (the direction in which the board surface extends). In addition, in the current paths provided by other lines and devices close to the protection unit, the current direction is not opposite to the current direction of the current path of the protection unit as much as possible, and the distance can be kept as much as possible when the current is unavoidable.
The process of determining an overcurrent event by the processing unit based on data collected by the single monitoring unit is described in exemplary fashion below in connection with fig. 6. Referring to fig. 6, fig. 6 is a flowchart illustrating a determination of an overcurrent event by the processing unit according to an embodiment of the application. The process of determining the overcurrent event by the processing unit includes the following steps S601 to S604:
S601, first magnetic field data uploaded by a first sensor and second magnetic field data uploaded by a second sensor from a monitoring unit are received.
After the first magnetic field data and the second magnetic field data are received, the first magnetic field data and the second magnetic field data are written into a register for the processing unit to call and analyze.
S602, judging whether the magnetic field directions indicated by the first magnetic field data and the second magnetic field data are opposite.
If yes, continue to execute S603, if not, empty the register, continue to monitor.
It should be noted that, in the foregoing embodiment shown in fig. 1, it has been already described how to determine whether the directions of the magnetic fields indicated by the first magnetic field data and the second magnetic field data are opposite, which is not repeated here.
S603, judging whether the first magnetic field data and the second magnetic field data are two data within a preset time period.
If yes, then execute S604; if not, the register is cleared, and monitoring is continued.
It should be noted that, in the foregoing embodiment shown in fig. 1, how to determine whether the first magnetic field data and the second magnetic field data are two data within the preset duration has been described, which is not repeated here. In addition, the order of S602 and S603 may be exchanged, which is not particularly limited in the embodiment of the present application.
S604, determining that the circuit unit corresponding to the monitoring unit generates an overcurrent event.
It should be noted that, after S604, the processor may further determine the circuit unit corresponding to the monitoring unit as an occurrence position of the overcurrent event and record the occurrence time of the overcurrent event, which is not limited in particular in the embodiment of the present application.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (10)

1. A monitoring circuit for monitoring an overcurrent event of a circuit unit; the circuit unit comprises a protection unit and a protected circuit, wherein the protection unit is used for overcurrent protection of the protected circuit; the monitoring circuit includes:
the monitoring unit is used for monitoring the protection unit; the monitoring unit comprises a first sensor and a second sensor;
the first sensor is used for being arranged on a first side of the protection unit, and the second sensor is used for being arranged on a second side of the protection unit; the arrangement direction of the first sensor and the second sensor is perpendicular to the current path of the protection unit; the first sensor is used for acquiring first magnetic field data, and the first magnetic field data is used for indicating the magnetic field direction of a magnetic field at the first sensor; the second sensor is used for acquiring second magnetic field data, and the second magnetic field data is used for indicating the magnetic field direction of a magnetic field at the second sensor;
And the processing unit is connected with the first sensor and the second sensor and is used for receiving the first magnetic field data and the second magnetic field data, and determining that the circuit unit where the protection unit is positioned has an overcurrent event if the magnetic field direction indicated by the first magnetic field data is opposite to the magnetic field direction indicated by the second magnetic field data.
2. The monitoring circuit of claim 1, wherein the processing unit is further configured to determine that the first magnetic field data and the second magnetic field data are two data within a preset duration before the processing unit determines that the circuit unit in which the protection unit is located has an overcurrent event.
3. The monitoring circuit of claim 2, wherein the acquisition time difference of the first magnetic field data and the second magnetic field data is within the preset time period.
4. The monitoring circuit of claim 2, wherein the first magnetic field data and the second magnetic field data are two data received by the processing unit within the preset time period.
5. The monitoring circuit according to any one of claims 1 to 4, wherein the circuit unit is a plurality of; the monitoring units are multiple; the protected circuit includes at least one protected port; the single circuit unit comprises at least one protection unit; one of the protection units is used for overcurrent protection of one of the protected ports; one of the monitoring units applies to monitoring of one of the protection units for one of the circuit units;
The processing unit is connected with the first sensor and the second sensor of each monitoring unit, and is further used for outputting the circuit unit where the protection unit monitored by the target monitoring unit is located as the occurrence position of the overcurrent event;
the target monitoring unit is a monitoring unit with the magnetic field direction indicated by the first magnetic field data acquired by the first sensor and the magnetic field direction indicated by the second magnetic field data acquired by the second sensor in a plurality of monitoring units.
6. The monitoring circuit of any one of claims 1 to 4, wherein the first sensor and the second sensor are hall sensors.
7. The monitoring circuit of any one of claims 1 to 4, wherein a spacing between the guard unit and the first sensor does not exceed a first preset spacing, and a spacing between the guard unit and the second sensor does not exceed a second preset spacing.
8. A monitoring system, comprising:
a circuit unit; the circuit unit comprises a protection unit and a protected circuit, wherein the protection unit is used for overcurrent protection of the protected circuit;
A monitoring circuit according to any one of claims 1 to 7 for monitoring the protection unit in the circuit unit.
9. The monitoring system of claim 8, wherein the protection unit is a TVS diode or a zener diode.
10. The monitoring system of claim 9, wherein a cathode of the protection unit is connected to a protected port of the protected circuit and an anode of the protection unit is connected to a ground of the protected circuit.
CN202210022743.3A 2022-01-10 2022-01-10 Monitoring circuit and monitoring system Active CN115616277B (en)

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