Nothing Special   »   [go: up one dir, main page]

CN115497965A - Image sensor, manufacturing method thereof, and method for detecting crosstalk and halo between adjacent pixels of image sensor - Google Patents

Image sensor, manufacturing method thereof, and method for detecting crosstalk and halo between adjacent pixels of image sensor Download PDF

Info

Publication number
CN115497965A
CN115497965A CN202110670617.4A CN202110670617A CN115497965A CN 115497965 A CN115497965 A CN 115497965A CN 202110670617 A CN202110670617 A CN 202110670617A CN 115497965 A CN115497965 A CN 115497965A
Authority
CN
China
Prior art keywords
pixel
light
image sensor
pixel units
units
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110670617.4A
Other languages
Chinese (zh)
Inventor
郑展
张浩然
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Galaxycore Shanghai Ltd Corp
Original Assignee
Galaxycore Shanghai Ltd Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Galaxycore Shanghai Ltd Corp filed Critical Galaxycore Shanghai Ltd Corp
Priority to CN202110670617.4A priority Critical patent/CN115497965A/en
Publication of CN115497965A publication Critical patent/CN115497965A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14623Optical shielding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685Process for coatings or optical elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

The invention provides an image sensor and a preparation method thereof, and a method for detecting crosstalk and halo between adjacent pixels of the image sensor, wherein the image sensor comprises: a pixel array composed of pixel units, the pixel array including a photosensitive pixel region for sensing light and a black pixel region for alignment; and discontinuous light shielding layers are covered on the surfaces of the photosensitive pixel areas and/or the black pixel areas to prevent light rays from entering, wherein the pixel units covered by the light shielding layers are light shielding pixel units, and the pixel units not covered by the light shielding layers are non-light shielding pixel units. By designing the light shielding layer of the black pixel region to be discontinuous, stress, process damage and the like can be relieved, the performance difference between the black pixel region and the photosensitive pixel region is reduced, and better black level calibration is realized; by the design of the discontinuous light-shielding layer, testing of halo and crosstalk between monochrome pixels and pixels without pigment processing can be realized.

Description

Image sensor, manufacturing method thereof, and method for detecting crosstalk and halo between adjacent pixels of image sensor
Technical Field
The invention relates to the technical field of image sensors, in particular to an image sensor and a preparation method thereof, and a method for detecting crosstalk and halation between adjacent pixels of the image sensor.
Background
In the image sensor, the image sensor is provided with a photosensitive pixel array and a black pixel array, wherein the surface of the black pixel array is covered by a shading layer, and the black pixel array is used for calibrating photosensitive pixel signals of the photosensitive pixel array by counting black level values. However, the black pixel array has more light shielding layers than the photosensitive pixel array, and differences such as stress, process damage and the like are introduced, so that the black level of the black pixel array deviates from the black level of the photosensitive pixel array, black level noise cannot be effectively eliminated in black level calibration, and the image signal to noise ratio is influenced.
Crosstalk (crosstalk) and halo (Blooming) between pixels of the image sensor are important technical indexes of pixel design, and have a significant influence on imaging performance.
For an image sensor with a color filter, the method for testing crosstalk or halo is to irradiate pixels, and calculate to obtain crosstalk and halo data by detecting the brightness values of a target pixel and adjacent pixels.
As shown in fig. 1, the conventional color filters are arranged in an RGGB manner, where R represents a pixel unit covered with a red filter, B represents a pixel unit covered with a blue filter, and G1 (2) represents a pixel unit covered with a green filter. In the prior art, for crosstalk and halo test between pixels of an image sensor with a color filter, a pixel region is usually illuminated with green light, and brightness values in pixel units G1, G2, B, and R are respectively collected to form a brightness-exposure time relationship diagram as shown in fig. 2, where k is k G1 Is the brightness slope, k, of the pixel cell G1 G2 Is the luminance slope, k, of the pixel cell G2 R a、k R b is the luminance slope of the pixel unit R, k B a、k B B is the luminance slope of the pixel cell B.
The crosstalk value of the pixel units G1 and G2 to the pixel unit R is k R a*2/(k G1 + k G2 ) (ii) a The halo value of the pixel cells G1 and G2 to the pixel cell R is k R b*2/(k G1 + k G2 )- k R a*2/(k G1 + k G2 )。
For a monochrome image sensor or an image sensor without a pigment process, crosstalk data cannot be obtained through different colors, and the influence of crosstalk (Cross Talk) and halo (Blooming) on the final image effect cannot be timely and accurately evaluated, which increases the cost and period of pixel optimization.
Disclosure of Invention
The invention aims to provide an image sensor, a manufacturing method thereof and a method for detecting crosstalk and halo between adjacent pixels of the image sensor, which are used for relieving stress, process damage and the like, realizing better black level calibration and testing the crosstalk or halo value between the adjacent pixels of the image sensor.
In view of the above, the present invention provides an image sensor including a pixel array composed of pixel units, the pixel array including a photosensitive pixel region for sensing light and a black pixel region for calibration;
the photosensitive pixel area and/or the surface of the black pixel area are covered with discontinuous light shielding layers to prevent light from entering, wherein the pixel units covered by the light shielding layers are light shielding pixel units, and the pixel units not covered by the light shielding layers are non-light shielding pixel units.
Optionally, all of the other pixel units adjacent to a non-light-shielded pixel unit are light-shielded pixel units.
Optionally, a light-shielded pixel unit with two connected vertexes is determined, and the other two pixel units sharing the vertex are non-light-shielded pixel units.
Optionally, the light-shielding layer covered on the surface of the black pixel region is discontinuous to relieve stress and process damage of the light-shielding layer to the pixel unit in the black pixel region.
Optionally, the light shielding layer is a metal or organic light shielding material.
The invention also provides a preparation method of the image sensor, which comprises the following steps:
providing a pixel array composed of pixel units, wherein the pixel array comprises a photosensitive pixel area for photosensitive and a black pixel area for calibration;
and forming a discontinuous light shielding layer on the surfaces of the photosensitive pixel area and/or the black pixel area to block light from entering.
Optionally, the method for forming a discontinuous light-shielding layer on the surface of the photosensitive pixel region and/or the black pixel region includes: depositing a shading layer on the surface of the pixel array;
and removing part of the shading layer through photoetching and etching processes, and forming a discontinuous shading layer on the surfaces of the photosensitive pixel region and/or the black pixel region.
Optionally, in the pixel array, the light-shielding layer on the surface of a certain pixel unit is removed, and the light-shielding layer on the surface of other pixel units adjacent to the pixel unit is remained.
Optionally, in the pixel array, the light-shielding layer on the surface of the pixel unit where two vertexes are connected is removed, and the light-shielding layer on the surface of another two pixel units sharing the vertex is remained.
The invention also provides a method for detecting crosstalk and halo between adjacent pixels of the image sensor, wherein the image sensor comprises a pixel array consisting of a plurality of pixel units; forming a discontinuous light shielding layer on the surface of the pixel array to prevent light from entering, wherein the pixel units covered by the light shielding layer are light-shielding pixel units, and the pixel units not covered by the light shielding layer are non-light-shielding pixel units;
and carrying out light irradiation on the pixel array, respectively measuring the brightness values of the shading pixel unit and the non-shading pixel unit adjacent to the shading pixel unit, and calculating to obtain crosstalk or halo data between the pixel units.
Optionally, a certain pixel unit is selected as a non-light-shielding pixel unit in the pixel array, and all other pixel units adjacent to the non-light-shielding pixel unit are set as light-shielding pixel units.
Optionally, in the pixel array, a pixel unit where two vertexes are connected is selected as a non-light-shielding pixel unit, and another two pixel units sharing the vertex are set as light-shielding pixel units.
The method is optionally applied to crosstalk or halo test among pixel units when a pigment process stage is not carried out in the manufacturing process of the color image sensor.
Alternatively, the method is applied to crosstalk or halo test among pixel units of the monochrome image sensor.
The image sensor and the preparation method thereof, and the detection method of crosstalk and halo between adjacent pixels of the image sensor have the following beneficial effects:
by designing the light shielding layer of the black pixel region to be discontinuous, stress, process damage and the like can be relieved, the performance difference between the black pixel region and the photosensitive pixel region is reduced, and better black level calibration is realized;
through the design of the discontinuous light-shielding layer, halo and crosstalk tests between monochrome pixels and pixels without pigment technology can be realized;
discontinuous light shielding layer design can be placed in a black pixel area, and based on the use of the existing light shielding layer, the test of halation and crosstalk among pixels is realized without increasing the design cost and the design area; the design of discontinuous light shielding layer can be realized by adding light shielding layer for some special stages (such as front-illuminated process stage test of back-illuminated chip) so as to carry out halo test between pixels.
Drawings
Other features, objects and advantages of the present invention will become more apparent from the following detailed description of non-limiting embodiments thereof, which is to be read in connection with the accompanying drawings.
FIG. 1 is a schematic diagram of a conventional color pixel array;
FIG. 2 is a graph showing the relationship between luminance and exposure time of a conventional color pixel array;
FIG. 3 is a schematic diagram of a pixel array provided in the present invention;
FIG. 4 is a schematic diagram of a pixel array according to another embodiment of the present invention;
fig. 5 is a graph showing the relationship between the luminance and the exposure time of the pixel array provided by the present invention.
In the drawings, like or similar reference numbers indicate like or similar devices (modules) or steps throughout the different views.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, but rather construed as limited to the embodiments set forth herein.
Next, the present invention is described in detail by using schematic diagrams, and when the embodiments of the present invention are described in detail, the schematic diagrams are only examples for convenience of description, and the scope of the present invention should not be limited herein.
The technical solution of the present invention is described in detail by the specific embodiments with reference to the accompanying drawings.
The invention provides an image sensor and a preparation method thereof.A discontinuous light shielding layer covers a photosensitive pixel array or a black pixel array or the photosensitive pixel array and the black pixel array. The discontinuous light-shielding layer is formed, so that the stress of the light-shielding layer on the pixel array can be reduced.
The technical solution provided by the present embodiment is described in detail below with reference to the accompanying drawings.
As shown in fig. 3, the present embodiment provides an image sensor including a pixel array composed of pixel units, taking an 8 × 8 pixel array 10 as an example. The pixel array 10 includes the 101 th row, 102 th row, 103 th row, 104 th row, 105 th row, 106 th row, 107 th row and 108 th row from top to bottom, and the a-th column, the b-th column, the c-th column, the d-th column, the e-th column, the f-th column, the g-th column and the h-th column from left to right. The pixel array 10 includes a photosensitive pixel region 11 for sensing light and a black pixel region 12 for alignment, which is located around the photosensitive pixel region 11. The black pixel area may be placed anywhere around the photosensitive pixel area.
The surfaces of the photosensitive pixel area 11 or the black pixel area 12 or the surfaces of the photosensitive pixel area 11 and the black pixel area 12 are covered with discontinuous light shielding layers for blocking light from entering. The pixel units covered by the light shielding layer are light-shielding pixel units, and the pixel units not covered by the light shielding layer are non-light-shielding pixel units.
In this embodiment, the surface of the black pixel region 12 has a discontinuous light shielding layer 131, wherein the pixel units 101e, 102a, 102b, 102d, and 102g are non-light shielding pixel units. By designing the light-shielding layer 131 of the black pixel region 12 to be discontinuous, and breaking the light-shielding layer on the basis of the existing light-shielding layer, stress, process damage and the like to the black pixel region caused by the light-shielding layer can be relieved, the performance difference between the black pixel region and the photosensitive pixel region is reduced, and better black level calibration is realized.
In addition, the pixel units around the non-light-shielding pixel unit 102g are all covered by the light-shielding layer 131, and this structure can not only relieve the stress caused by the light-shielding layer, but also be used for crosstalk and halo test between pixels. Alternatively, the pixel units 101e and 102d may be non-light-shielding pixel units, and the pixel units 101d and 102e sharing the vertex with the pixel units 101e and 102d may be light-shielding pixel units. Specifically, the brightness values of the light-shielding pixel unit and the non-light-shielding pixel unit adjacent to the light-shielding pixel unit are respectively measured by irradiating the pixel array with light, and the crosstalk or halo data between the pixel units is obtained by calculating the brightness values. On the basis of using the existing shading layer, the non-shading pixel unit is selected, and crosstalk or halo test can be performed under the condition that the design cost is not increased and the design area is not increased.
In the present embodiment, in the photosensitive pixel region 11, there is a discontinuous light shielding layer 132, where the pixel units 104d and 105c are light shielding pixel units, and the pixel units 104c and 105d sharing a vertex with the pixel units 104d and 105c are non-light shielding pixel units, and this structure can be used for crosstalk or halo test. Alternatively, the pixel units around the non-light-shielding pixel unit 107g may be entirely covered with the light-shielding layer 132, and this structure may be used for crosstalk or halo test. Specifically, the brightness values of the shading pixel units and the non-shading pixel units adjacent to the shading pixel units are respectively measured by irradiating the pixel array with light, and the crosstalk or halo data between the pixel units are obtained by calculating the brightness values.
The discontinuous light-shielding layer may be provided in other forms, and is not limited to the form shown in fig. 3, and the specific form is not limited.
It should be noted that the light shielding layer may cover a plurality of complete pixel units or portions of pixel units. In other embodiments, as shown in fig. 4, the light shielding layers 131', 132' cover portions of the pixel units 101e ', 101f', 102f ', 103f', 105e ', 106 d'.
The light shielding layer is made of metal or organic light shielding material.
The invention also provides a preparation method of the image sensor, which comprises the following steps: providing a pixel array composed of pixel units, wherein the pixel array comprises a photosensitive pixel area for photosensitive and a black pixel area for calibration;
and forming a discontinuous light shielding layer on the surfaces of the photosensitive pixel area and/or the black pixel area to prevent light rays from entering.
Specifically, referring to fig. 3, the method of forming the discontinuous light-shielding layer includes: depositing a light shielding layer on the surface of the pixel array;
and removing part of the light shielding layer through photoetching and etching processes, and forming discontinuous light shielding layers on the surfaces of the photosensitive pixel areas 11 or the surfaces of the black pixel areas 12 or the surfaces of the photosensitive pixel areas 11 and the black pixel areas 12.
As an example, in the pixel array, the discontinuous light shielding layer 13 is obtained by removing the light shielding layer on the surface of the pixel unit 102g or 107g and leaving the light shielding layer on the surface of the other pixel unit adjacent to the pixel unit 102g or 107 g.
As an example, in the pixel array, the discontinuous light-shielding layer 13 is obtained by removing the light-shielding layer on the surface of the two pixel units 104c and 105d whose vertexes are connected and leaving the light-shielding layer on the surface of the other two pixel units 104d and 105c sharing the vertexes.
The discontinuous light-shielding layer may be provided in other forms, and is not limited herein.
The invention also provides a method for detecting crosstalk and halo between adjacent pixels of the image sensor, which mainly comprises the following steps:
the image sensor includes a pixel array composed of a plurality of pixel units;
forming discontinuous light shielding layers on the surfaces of the pixel arrays to prevent light from entering, wherein the pixel units covered by the light shielding layers are light shielding pixel units, and the pixel units not covered by the light shielding layers are non-light shielding pixel units;
and carrying out light irradiation on the pixel array, respectively measuring the brightness values of the shading pixel unit and the non-shading pixel unit adjacent to the shading pixel unit, and calculating to obtain crosstalk or halo data between the pixel units.
For halo or crosstalk test among pixel units of the achromatic color filter, a shading pixel unit and a non-shading pixel unit are obtained by arranging a discontinuous shading layer, and the crosstalk or halo value is obtained by analyzing and processing the brightness of the shading pixel unit and the non-shading pixel unit adjacent to the shading pixel unit obtained by the test. The method can be applied to crosstalk or halo test among pixel units when a pigment process stage is not carried out in the manufacturing process of the monochrome image sensor or the color image sensor.
In order to obtain more accurate pixel crosstalk or halo data, a certain pixel unit is determined from a pixel area, and other pixel units adjacent to the pixel unit are all designed to be light-shielding pixel units, so that crosstalk or halo values of the pixel unit to adjacent pixel units around are accurately obtained.
As an example, as shown in fig. 3, an 8 × 8 pixel array 10 is taken as an example. The pixel cell 102g or 107g is selected, and the pixel cells surrounding the pixel cell 102g or 107g are all designed as light-shielding pixel cells. And (3) carrying out light shooting on the pixel area to obtain the brightness values of the pixel unit 102g or 107g and the peripheral black pixel units, and calculating to obtain the crosstalk or halo value of the pixel unit 102g or 107g to any peripheral pixel unit.
Specifically, a crosstalk or a halo value of the detection pixel unit 107g to its neighboring 106h is taken as an example. The pixel region is irradiated with light, and the luminance values in the pixel units 107g and 106h are respectively collected to form a luminance-exposure time relationship diagram as shown in FIG. 5, wherein k is g Is the luminance slope, k, of the pixel cell 107g h a、k h b is the luminance slope of the pixel cell 106 h.
The crosstalk value of pixel 107g to pixel 106h is k h a/k g (ii) a The halo value of pixel 107g to pixel 106h is k h b/k g - k h a/k g
Similarly, the halo or crosstalk value of the pixel unit 102g to its surrounding pixel units can also be measured by this method.
For color image sensors, the filters are usually arranged in an RGGB manner, and crosstalk or halo between pixel units can be tested without performing a pigment process or a color filter forming stage in order to find problems of crosstalk or halo between pixels earlier.
Specifically, as shown in fig. 3, in the pixel region, two pixel units 101e and 102d with connected vertexes are determined, the other two pixel units 101b and 102e sharing the vertexes are used as light-shielding pixel units, light is irradiated on the pixel region, the luminance values of the light-shielding pixel units 101d and 102e and the non-light-shielding pixel units 101e and 102d are respectively measured, and calculation is performed, so that crosstalk or halo values of the pixel units 101e and 102d to the adjacent pixel units are obtained, and the specific calculation process is the same as the calculation method of crosstalk and halo of the pixel units G1 and G2 to the pixel unit R in the prior art.
Similarly, the crosstalk or halo values of the pixel units 104c and 105d to the adjacent pixel units can be obtained by the same method.
The arrangement of the light-shielding pixel unit and the non-light-shielding pixel unit is not limited to the two forms shown in fig. 3, and other forms of arrangement may be performed as needed, which is not limited herein.
It should be noted that, for a pixel array having a photosensitive pixel region and a black pixel region, it may be considered to dispose a discontinuous light shielding layer for testing crosstalk or halo in the black pixel region, so that the halo or crosstalk test may be completed by using the existing light shielding layer without increasing the design cost and the design area.
The design of the discontinuous light shielding layer can be realized by adding the light shielding layer aiming at some special stages (such as the front-illuminated process stage test of a back-illuminated chip) so as to test the crosstalk or the halo between pixels.
In summary, the invention provides an image sensor and a method for manufacturing the same, and a method for detecting crosstalk and halo between adjacent pixels of the image sensor, wherein the shading layer of the black pixel region is designed to be discontinuous, so that stress, process damage and the like can be relieved, the performance difference between the black pixel region and the photosensitive pixel region is reduced, and better black level calibration is realized; through the design of the discontinuous light-shielding layer, halo and crosstalk tests between monochrome pixels and pixels without pigment technology can be realized; discontinuous light shielding layer design can be placed in a black pixel area, and the existing light shielding layer can be used, so that halo and crosstalk tests among pixels can be realized under the conditions of not increasing the design cost and the design area; the design of discontinuous light shielding layer can be realized by adding light shielding layer for some special stages (such as front-illuminated process stage test of back-illuminated chip) so as to carry out halo test between pixels.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive. Furthermore, it will be obvious that the word "comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. Several elements recited in the apparatus claims may also be embodied by one element. The terms first, second, etc. are used to denote names, but not any particular order.

Claims (14)

1. An image sensor is characterized by comprising a pixel array composed of pixel units, wherein the pixel array comprises a photosensitive pixel area for light sensing and a black pixel area for calibration;
and discontinuous light shielding layers are covered on the surfaces of the photosensitive pixel areas and/or the black pixel areas to prevent light rays from entering, wherein the pixel units covered by the light shielding layers are light shielding pixel units, and the pixel units not covered by the light shielding layers are non-light shielding pixel units.
2. The image sensor of claim 1, wherein all of the other pixel cells adjacent to a non-light-shielded pixel cell are light-shielded pixel cells.
3. The image sensor of claim 1, wherein the light-shielded pixel cells connected to two vertices are determined, and the other two pixel cells sharing the vertex are non-light-shielded pixel cells.
4. The image sensor as claimed in claim 1, wherein the light-shielding layer is discontinuous on the surface of the black pixel region to relieve stress and process damage of the light-shielding layer to the pixel units in the black pixel region.
5. The image sensor according to claim 1, wherein the light shielding layer is a metal or organic light shielding material.
6. A method of manufacturing an image sensor, comprising the steps of:
providing a pixel array composed of pixel units, wherein the pixel array comprises a photosensitive pixel area for photosensitive and a black pixel area for calibration;
and forming a discontinuous light shielding layer on the surfaces of the photosensitive pixel area and/or the black pixel area to block light from entering.
7. The method for manufacturing the image sensor as claimed in claim 6, wherein the step of forming the discontinuous light shielding layer on the surface of the photosensitive pixel region and/or the black pixel region comprises: depositing a shading layer on the surface of the pixel array;
and removing part of the shading layer through photoetching and etching processes, and forming a discontinuous shading layer on the surfaces of the photosensitive pixel region and/or the black pixel region.
8. The method of claim 7, wherein the light-shielding layer on the surface of a pixel unit is removed and the light-shielding layer on the surface of another pixel unit adjacent to the pixel unit is remained in the pixel array.
9. The method of claim 7, wherein the light-shielding layer on the surface of two adjacent pixel units is removed and the light-shielding layer on the surface of two other pixel units sharing the same vertex is remained in the pixel array.
10. A method for detecting crosstalk and halo between adjacent pixels of an image sensor is characterized in that the image sensor comprises a pixel array consisting of a plurality of pixel units; forming a discontinuous light shielding layer on the surface of the pixel array to prevent light from entering, wherein the pixel units covered by the light shielding layer are light-shielding pixel units, and the pixel units not covered by the light shielding layer are non-light-shielding pixel units;
and carrying out light irradiation on the pixel array, respectively measuring the brightness values of the shading pixel units and the non-shading pixel units adjacent to the shading pixel units, and calculating to obtain crosstalk or halo data among the pixel units.
11. The method of claim 10, wherein a pixel unit in the pixel array is selected as a non-light-shielding pixel unit, and all other pixel units adjacent to the non-light-shielding pixel unit are set as light-shielding pixel units.
12. The method of claim 10, wherein two adjacent pixels are selected as non-light-shielding pixels, and two other pixels sharing the same vertex are set as light-shielding pixels.
13. The method for detecting crosstalk and halo between adjacent pixels of a monochrome image sensor according to claim 10, wherein the method is applied to crosstalk and halo testing between pixel units when a pigment process stage is not performed in a color image sensor manufacturing process.
14. The method for detecting crosstalk and halo between adjacent pixels of a monochrome image sensor according to claim 10, wherein the method is applied to crosstalk and halo testing between pixel units of the monochrome image sensor.
CN202110670617.4A 2021-06-17 2021-06-17 Image sensor, manufacturing method thereof, and method for detecting crosstalk and halo between adjacent pixels of image sensor Pending CN115497965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110670617.4A CN115497965A (en) 2021-06-17 2021-06-17 Image sensor, manufacturing method thereof, and method for detecting crosstalk and halo between adjacent pixels of image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110670617.4A CN115497965A (en) 2021-06-17 2021-06-17 Image sensor, manufacturing method thereof, and method for detecting crosstalk and halo between adjacent pixels of image sensor

Publications (1)

Publication Number Publication Date
CN115497965A true CN115497965A (en) 2022-12-20

Family

ID=84464774

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110670617.4A Pending CN115497965A (en) 2021-06-17 2021-06-17 Image sensor, manufacturing method thereof, and method for detecting crosstalk and halo between adjacent pixels of image sensor

Country Status (1)

Country Link
CN (1) CN115497965A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116540435A (en) * 2023-07-04 2023-08-04 惠科股份有限公司 Halation test method and halation test equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116540435A (en) * 2023-07-04 2023-08-04 惠科股份有限公司 Halation test method and halation test equipment
CN116540435B (en) * 2023-07-04 2023-09-22 惠科股份有限公司 Halation test method and halation test equipment

Similar Documents

Publication Publication Date Title
US20050057655A1 (en) Method for automated testing of the modulation transfer function in image sensors
KR101387182B1 (en) Imaging device and endoscopic apparatus
US20100231770A1 (en) Solid-state image sensing device
EP2980849B1 (en) Semiconductor image pickup element, image pickup apparatus, electronic apparatus, and manufacturing method
CN112689104B (en) Image sensor
US20050030394A1 (en) Pixel defect correction in a CMOS active pixel image sensor
KR20160065464A (en) Color filter array, image sensor having the same and infrared data acquisition method using the same
CN115497965A (en) Image sensor, manufacturing method thereof, and method for detecting crosstalk and halo between adjacent pixels of image sensor
US20070097227A1 (en) Solid-state imaging device
JP2011503560A (en) Circuit arrangement for generating light and temperature dependent signals
CN113824906B (en) Image sensing device
US7027091B1 (en) Detection of color filter array alignment in image sensors
JP2005347708A (en) Solid-state imaging device and manufacturing method thereof
JP2017158176A (en) Imaging apparatus and imaging system
TWI722934B (en) Image sensor with self-testing black level correction
US20120105847A1 (en) Spectrometric measurement system and method for compensating for veiling glare
US7447385B2 (en) Bio-optical sensors
US11158660B2 (en) Image sensor having two-colored color filters sharing one photodiode
US11923389B2 (en) Image sensing device
US7400352B1 (en) Method of estimating electrical cross talk in an array of imaging cells
TW201034442A (en) Gradation image capture for testing image sensors
JP2020038107A (en) Temperature measurement device
Tisserand Custom Bayer filter multispectral imaging: emerging integrated technology
JP2018009960A (en) Sensor module, method for ascertaining brightness and/or color of electromagnetic radiation, and method for manufacturing sensor module
CN215179622U (en) Multispectral channel device and multispectral channel analysis device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination