CN115377332A - Preparation method of light-emitting device and preparation method of display panel - Google Patents
Preparation method of light-emitting device and preparation method of display panel Download PDFInfo
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- CN115377332A CN115377332A CN202110742196.1A CN202110742196A CN115377332A CN 115377332 A CN115377332 A CN 115377332A CN 202110742196 A CN202110742196 A CN 202110742196A CN 115377332 A CN115377332 A CN 115377332A
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000010410 layer Substances 0.000 claims abstract description 276
- 239000002346 layers by function Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 14
- 230000002209 hydrophobic effect Effects 0.000 claims description 9
- 239000000696 magnetic material Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000007641 inkjet printing Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
The invention relates to a preparation method of a light-emitting device and a preparation method of a display panel. The preparation method of the light-emitting device comprises the steps of forming a stripping layer on the surface, far away from a substrate, of a first pixel defining layer and then forming a functional layer in a pixel unit. After the functional layer is formed, the peeling layer is removed, and at this time, the difference in height between the functional layer and the first pixel defining layer is small or the functional layer may be made flush with the first pixel defining layer. Then, when the electrode layer is formed on the surface of the functional layer and the first pixel defining layer, the electrode layer does not need to cover the step formed due to the larger height difference, so that the electrode layer can be stably formed, each part of the electrode layer keeps uniform thickness, the thickness uniformity of the electrode layer is effectively improved, and the display performance of the display panel is improved.
Description
Technical Field
The invention relates to the technical field of display panels, in particular to a light-emitting device manufacturing method and a display panel manufacturing method.
Background
Organic light emitting diodes are widely used in light emitting devices because of their advantages of active light emission, thinness, low power consumption, and large viewing angle. In the preparation process of the light-emitting device, ink can be printed in a pixel unit formed by a pixel defining layer in an ink-jet printing mode to obtain a corresponding functional layer, and then an electrode layer is formed on the surface of the functional layer.
However, referring to fig. 1, a light emitting device 100 obtained by a conventional method is shown, where the light emitting device 100 includes a substrate 101, a pixel defining layer 102 disposed on the substrate 101, the pixel defining layer 102 forming a pixel unit 103, a functional layer 104 disposed in the pixel unit 103, and an electrode layer 105 disposed on the functional layer 104 and the pixel defining layer 102. In the light emitting device 100, the functional layer 104 and the edge of the pixel defining layer 102 have a large height difference, so that when the electrode layer 105 is manufactured, the electrode layer 105 needs to cover a step formed due to the large height difference, and at this time, defects such as discontinuity and thinning of the electrode layer 105 at the step are likely to occur, which causes non-uniform thickness of the electrode layer 105, and may further adversely affect the display of the device.
Disclosure of Invention
In view of the above, it is necessary to provide a method for manufacturing a light emitting device and a method for manufacturing a display panel, which can effectively improve the uniformity of the thickness of an electrode layer.
In order to solve the technical problems, the technical scheme of the application is as follows:
a method for preparing a light-emitting device comprises the following steps:
forming a first pixel defining layer with an opening on a substrate, wherein the side wall of the opening and the surface of the substrate form a pixel unit;
forming a peeling layer on a surface of the first pixel defining layer away from the substrate;
forming a functional layer in the pixel unit, wherein the thickness of the functional layer is less than or equal to that of the first pixel defining layer;
removing the peeling layer.
In one embodiment, before forming the functional layer in the pixel unit, the method further includes the following steps:
the side wall of the opening is subjected to hydrophilization treatment.
In one embodiment, before forming the functional layer in the pixel unit, the method further includes the following steps: and performing hydrophobic treatment on the side wall of the stripping layer.
In one embodiment, the material of the peeling layer is a magnetic material.
In one embodiment, removing the release layer comprises the steps of:
the peeling layer is disposed facing the magnetic member, and the peeling layer is removed under the attraction of the magnetic member.
In one embodiment, when removing the peeling layer, the method further comprises the following steps before disposing the peeling layer toward the magnetic member:
heating the substrate, and controlling the temperature of the substrate to be 100-300 ℃.
In one embodiment, an absolute value of a difference between an angle formed by the side wall of the peeling layer and the substrate surface and an angle formed by the side wall of the first pixel defining layer and the substrate surface is less than or equal to 30 °.
In one embodiment, before forming the functional layer in the pixel unit, the method further includes the following steps:
and forming a second pixel defining layer on the surface of the stripping layer far away from the first pixel defining layer, wherein the absolute value of the difference between the included angle formed by the side wall of the second pixel defining layer and the surface of the substrate and the included angle formed by the side wall of the first pixel defining layer and the surface of the substrate is less than or equal to 30 degrees.
In one embodiment, the first pixel defining layer has a thickness of 300nm to 700nm, and the peeling layer has a thickness of 200nm to 500nm.
A method of manufacturing a display panel comprising a light emitting device, the method comprising the method of manufacturing a light emitting device as described in any one of the above embodiments.
In the above light-emitting device manufacturing method, the peeling layer is formed on the surface of the first pixel defining layer away from the substrate, and then the functional layer is formed in the pixel unit. In the process, the thickness of the first pixel defining layer can be set to be equal to or slightly smaller than that of the first pixel defining layer, so that the functional layer can be completely positioned in the pixel unit defined by the first pixel defining layer, the problems of color mixing and the like caused by ink overflowing the pixel unit in the printing process are effectively avoided, and the display performance of the light-emitting device is ensured. After the functional layer is formed, the peeling layer is removed, and at this time, the difference in height between the functional layer and the first pixel defining layer is small or the functional layer may be made flush with the first pixel defining layer. Then, when the electrode layer is formed on the surface of the functional layer and the first pixel defining layer, the electrode layer does not need to cover steps formed due to large height difference, so that the electrode layer can be stably formed, each part of the electrode layer keeps uniform thickness, the thickness uniformity of the electrode layer is effectively improved, and the display performance of the light-emitting device is improved.
Drawings
FIG. 1 is a schematic diagram of a light emitting device obtained by a conventional manufacturing method, in which defects such as discontinuity, thinning, and the like occur in an electrode layer;
fig. 2 is a schematic structural diagram of a light emitting device in an embodiment of the present invention;
fig. 3 is a schematic diagram illustrating a first pixel defining layer formed in the method for manufacturing a light emitting device corresponding to fig. 2;
FIG. 4 is a schematic view of a release layer formed in the production method corresponding to FIG. 3;
fig. 5 is a schematic view of the formation of a functional layer in a manufacturing method corresponding to fig. 4;
FIG. 6 is a schematic view of a second pixel defining layer formed in the manufacturing method corresponding to FIG. 3;
fig. 7 is a schematic view of the formation of a functional layer in a manufacturing method corresponding to fig. 6;
FIG. 8 is a schematic view showing a peeling layer removed in the production method corresponding to FIG. 6;
fig. 9 is a schematic view after removing the peeling layer in the production method corresponding to fig. 6.
The notation in the figure is:
100. a light emitting device; 101. a substrate; 102. a pixel defining layer; 103. a pixel unit; 104. a functional layer; 105. an electrode layer; 200. a light emitting device; 201. a substrate; 202. a first pixel defining layer; 203. an opening; 204. a peeling layer; 205. a second pixel defining layer; 206. a functional layer; 207. a first electrode layer; 300. and a magnet.
Detailed Description
The present invention will be described in detail with reference to the following embodiments in order to make the above objects, features and advantages of the present invention more comprehensible. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
In the present invention, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 2, a light emitting device 200 is provided according to an embodiment of the present invention. The light emitting device 200 includes a substrate 201, a first pixel defining layer 202, a functional layer 206, and a first electrode layer 207. The first pixel defining layer 202 has an opening, and a sidewall of the opening and a surface of the substrate 201 form a pixel unit. The functional layer 206 is located within the pixel unit, and the thickness of the functional layer 206 is less than or equal to the thickness of the first pixel defining layer 202. The first electrode layer 207 is located on the functional layer 206 and the surface of the first pixel defining layer 202. It is understood that the number of the first pixel defining layers 202 shown in fig. 2 is 5. The first pixel defining layer in an actual light emitting device is determined according to the design requirements of the panel.
In the light emitting device 200 of the present embodiment, the height difference between the functional layer 206 and the first pixel defining layer 202 is small or the functional layer 206 is flush with the first pixel defining layer 202, so that when the first electrode layer 207 is formed, the first electrode layer 207 does not need to cover a step formed due to a large height difference, and the first electrode layer 207 has good thickness uniformity.
Further, the present invention provides a method for manufacturing the light emitting device 200. The preparation method comprises the following steps:
s101: a first pixel defining layer 202 having an opening 203 is formed on a substrate 201, and a sidewall of the opening 203 and a surface of the substrate 201 form a pixel unit. The structure of the light emitting device at this time is as shown in fig. 3.
S102: a peeling layer 204 is formed on a surface of the first pixel defining layer 202 away from the substrate 201. As shown in fig. 4.
S103: the functional layer 206 is formed within the pixel unit, and the thickness of the functional layer 206 is less than or equal to the thickness of the first pixel defining layer 202. The structure of the light emitting device at this time is shown in fig. 5.
S104: the peeling layer 204 is removed. The structure of the light emitting device at this time is shown in fig. 9.
Further, the step of removing the peeling layer 204 includes the following steps:
s105: a first electrode layer 207 is formed on the surfaces of the functional layer 206 and the first pixel defining layer 202. The structure of the light emitting device at this time is shown in fig. 2.
It is understood that in the light emitting device 200, the thickness of the functional layer 206 is typically 200nm to 700nm. The functional layer 206 refers to a functional layer that does not include an electrode layer. Specifically, the functional layer 206 includes, but is not limited to, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, and a light extraction layer. The thickness of the functional layer 206 refers to the thickness after removal of the electrode layer, and includes, but is not limited to, the thickness of the hole injection layer, the thickness of the hole transport layer, the thickness of the electron blocking layer, the thickness of the light emitting layer, the thickness of the hole blocking layer, the thickness of the electron transport layer, the thickness of the electron injection layer, and the thickness of the light extraction layer. In the inkjet printing process, the functional layer 206 is obtained by injecting corresponding functional ink into the pixel unit. It is also understood that the functional layers may have different thicknesses in different pixel units, for example, in a red pixel unit, a green pixel unit and a blue pixel unit, the respective functional layers with suitable thicknesses may be independently selected according to design requirements, so that the functional layers in the red pixel unit, the green pixel unit and the blue pixel unit have the same or different thicknesses.
In the method of manufacturing the light-emitting device 200 in the present embodiment, the peeling layer 204 is formed on the surface of the first pixel defining layer 202 away from the substrate 201, and then the functional layer 206 is formed in the pixel unit. In this process, the thickness of the first pixel defining layer 202 is set to be equal to or slightly smaller than the thickness of the first pixel defining layer 202, so as to ensure that the functional layer 206 can be completely located in the pixel unit defined by the first pixel defining layer 202, avoid the problem of color mixing caused by ink overflowing the pixel unit during printing, and ensure the display performance of the light emitting device 200. After the functional layer 206 is formed, the peeling layer 204 is removed when the difference in height between the functional layer 206 and the first pixel defining layer 202 is small or the functional layer 206 can be made flush with the first pixel defining layer 202. Then, the first electrode layer 207 is formed on the functional layer 206 and the surface of the first pixel defining layer 202, and at this time, the first electrode layer 207 does not need to cover a step formed due to a large height difference, so that the first electrode layer 207 can be stably formed, and the thickness of each part of the first electrode layer 207 is kept uniform, thereby effectively improving the thickness uniformity of the first electrode layer 207 and improving the display performance of the light emitting device 200.
In a specific example, before the first pixel defining layer 202 having the opening 203 is formed on the substrate 201, the following steps are further included: a second electrode layer (not shown) is formed on the substrate 201 so that the functional layer 206 can be located on the second electrode surface. In the manufacturing process of the light emitting device 200, a second electrode layer is formed on the substrate 201, and the second electrode layer and the first electrode layer 207 are matched to form a conductive loop, so that the light emitting device 200 can perform a normal display function.
It will be appreciated that in some specific light emitting devices, the first electrode is a cathode and the corresponding second electrode is an anode. Optionally, the cathode material is one or more of indium zinc oxide, indium tin oxide and zinc oxide. The anode is indium tin oxide. Optionally, the first electrode is a transparent electrode.
As a preferable scheme, before forming the functional layer 206 in the pixel unit, the following steps are further included: the side wall of the opening 203 is subjected to hydrophilization treatment. The side wall of the opening 203 is subjected to hydrophilization treatment, so that the diffusion effect of ink along the side wall of the opening 203 is favorably reduced, the ink is better stabilized in a pixel unit, the stability of the ink in the pixel unit is improved, the amount of the ink in the pixel unit is more consistent with a theoretical value, and the accuracy of ink-jet printing is further improved. It is understood that the contact angle of the side wall of the opening 203 after the hydrophilization treatment is less than 90 °.
Further preferably, before forming the functional layer 206 in the pixel unit, the following steps are further included: the side wall of the peeling layer 204 is subjected to hydrophobization treatment. The side wall of the peeling layer 204 is subjected to hydrophobic treatment, so that the adhesion of ink on the side wall of the peeling layer 204 can be effectively avoided, the ink can be further limited in the pixel unit formed by the first pixel defining layer 202, the stability of the ink in the pixel unit is further improved, the amount of the ink in the pixel unit is more consistent with a theoretical value, and the accuracy of ink-jet printing is further improved. It is understood that the contact angle of the sidewall of the peeling layer 204 after the hydrophobizing treatment is larger than 90 °.
Alternatively, when the sidewall of the opening 203 is hydrophilized, the sidewall of the opening 203 may be hydrophilized by UV irradiation, ozone activation, adhesion of a hydrophilic material, or the like, depending on the material of the first pixel defining layer 202. Alternatively, the side wall of the peeling layer 204 may be hydrophobized, and the side wall of the peeling layer 204 may be hydrophobized by UV irradiation, ozone activation, adhesion of a hydrophobic material, or the like, depending on the material of the peeling layer 204.
As an example of the release layer 204, the release layer 204 is made of a magnetic material. It is understood that the magnetic material means a material capable of being attracted by the magnetic member. Specifically, the material of the peeling layer 204 may be at least one of iron, an iron-containing alloy, cobalt, a cobalt-containing alloy, nickel, and a nickel-containing alloy. In this case, referring to fig. 8, removing the peeling layer 204 includes the following steps: the peeling layer 204 is disposed facing the magnetic member, and the peeling layer 204 is removed by attraction of the magnetic member. Wherein the magnetic member may be a magnet 300. The peeling layer 204 is attracted by the magnet 300, and the peeling layer 204 is moved toward the magnet 300 by the attraction of the magnet 300, so that the peeling layer 204 can be removed and the peeling layer 204 can be separated from the first pixel defining layer 202. Preferably, when removing the peeling layer 204, before disposing the peeling layer toward the magnetic member, the method further includes the steps of: the substrate 201 is subjected to a heat treatment, and the temperature of the substrate 201 is controlled to 100 to 300 ℃. By performing heat treatment on the substrate 201, the bonding force between the peeling layer 204 and the first pixel defining layer 202 can be reduced, and the peeling layer 204 can be more easily separated from the first pixel defining layer 202. Specifically, the temperature of the substrate 201 cannot exceed the withstand temperature of the functional layer 206, the first pixel defining layer 202, and the substrate 201. More specifically, when the peeling layer 204 is removed, the substrate is controlled to move, and the peeling layer 204 is removed during the movement of the substrate, improving the removal efficiency of the peeling layer 204.
It is understood that, when removing the peeling layer 204, the peeling layer 204 may be removed in a corresponding manner according to the material of the peeling layer 204. For example, the peeling layer 204 may be removed by sublimation, cracking, liquefaction, dissolution, or the like depending on the material of the peeling layer 204.
In a specific example, an absolute value of a difference between an angle formed by the side wall of the peeling layer 204 and the surface of the substrate 201 and an angle formed by the side wall of the first pixel defining layer 202 and the surface of the substrate 201 is 30 ° or less. Preferably, the angle formed by the sidewall of the peeling layer 204 and the surface of the substrate 201 is equal to the angle formed by the sidewall of the first pixel defining layer 202 and the surface of the substrate 201. Referring to fig. 4 again, an included angle formed between the sidewall of the peeling layer 204 and the surface of the substrate 201 is β, an included angle formed between the sidewall of the first pixel defining layer 202 and the surface of the substrate 201 is α, and an absolute value of a difference between β and α is less than or equal to 30 °. Optionally, the absolute value of the difference between β and α is 0, 2 °, 5 °, 10 °, 15 °, 20 °, or 25 °. When β is equal to α, the sidewall of the peeling layer 204 and the sidewall of the first pixel defining layer 202 have the same inclination angle, and the sidewall of the first pixel defining layer 202 and the sidewall of the peeling layer 204 are located on the same plane. Therefore, the ink can enter the pixel unit more smoothly during printing, the consistency of solvent volatilization is improved in the subsequent drying process, and the stability of the functional layer 206 in the pixel unit is favorably maintained.
It is understood that the sidewall of the first pixel defining layer 202 forms an angle less than or equal to 90 ° with the surface of the substrate 201. Preferably, the included angle formed between the sidewall of the first pixel defining layer 202 and the surface of the substrate 201 is 70 ° to 90 °. For example, the included angle formed by the sidewall of the first pixel defining layer 202 and the surface of the substrate 201 may be, but is not limited to, 70 °, 71 °, 72 °, 73 °, 74 °, 75 °, 76 °, 77 °, 78 °, 79 °, 80 °, 81 °, 82 °, 83 °, 84 °, 85 °, 86 °, 87 °, 88 °, 89 °, or 90 °.
Referring to fig. 6, in a specific example, before forming the functional layer 206 in the pixel unit, the following steps are further included: a second pixel defining layer 205 is formed on a surface of the peeling layer 204 remote from the first pixel defining layer 202. In the case where the thickness of the peeling layer 204 may not be as thick as actually required due to limitations of manufacturing processes or manufacturing costs, by forming the second pixel defining layer 205 on the surface of the peeling layer 204 far from the first pixel defining layer 202, the thickness of the peeling layer 204 can be effectively compensated for, and ink does not overflow during printing.
It is understood that the absolute value of the difference between the angle formed by the sidewall of the second pixel defining layer 205 and the surface of the substrate 201 and the angle formed by the sidewall of the first pixel defining layer 202 and the surface of the substrate 201 is less than or equal to 30 °. Preferably, the included angle formed by the sidewall of the second pixel defining layer 205 and the surface of the substrate 201 is equal to the included angle formed by the sidewall of the first pixel defining layer 202 and the surface of the substrate 201. In fig. 6, an angle formed by the sidewall of the second pixel defining layer 205 and the surface of the substrate 201 is γ, an angle formed by the sidewall of the first pixel defining layer 202 and the surface of the substrate 201 is α, and an absolute value of a difference between γ and α is less than or equal to 30 °. Optionally, the absolute value of the difference between γ and α is 0, 2 °, 5 °, 10 °, 15 °, 20 °, or 25 °. When γ is equal to α. At this time, the sidewall of the second pixel defining layer 205 and the sidewall of the first pixel defining layer 202 have the same inclination angle, and the sidewall of the second pixel defining layer 205 and the sidewall of the first pixel defining layer 202 are located on the same plane, which is beneficial to maintaining the stability of the functional layer 206 in the pixel unit.
It is also understood that the following steps are also included prior to forming the functional layer 206 within the pixel cell: the side wall of the second pixel defining layer 205 is subjected to a hydrophobic treatment. The side wall of the second pixel defining layer 205 is subjected to hydrophobic treatment, so that the adhesion of ink on the side wall of the second pixel defining layer 205 can be effectively avoided, the ink can be further limited in the pixel unit formed by the first pixel defining layer 202, the stability of the ink in the pixel unit is improved, the amount of the ink in the pixel unit is more consistent with a theoretical value, and the accuracy of ink-jet printing is further improved. It is understood that, after the hydrophobization treatment, the contact angle of the sidewall of the second pixel defining layer 205 is greater than 90 °.
Alternatively, when the side wall of the second pixel defining layer 205 is subjected to the hydrophobic treatment, the side wall of the peeling layer 204 may be subjected to the hydrophobic treatment by UV irradiation, ozone activation, adhesion of a hydrophobic material, or the like, depending on the material of the second pixel defining layer 205.
It is to be understood that when the second pixel defining layer 205 is present, the second pixel defining layer 205 needs to be removed when the peeling layer 204 is removed. Preferably, the peeling layer 204 is removed while the second pixel defining layer 205 is removed. For example, when the peeling layer 204 is made of a magnetic material and the peeling layer 204 is removed in the manner shown in fig. 8, the second pixel defining layer 205 may be removed along with the separation of the peeling layer 204 from the first pixel defining layer 202.
Further, the material of the first pixel defining layer 202 is the same as the material of the second pixel defining layer 205. At this time, the side wall of the first pixel defining layer 202 may be subjected to hydrophilization treatment and the side wall of the second pixel defining layer 205 may be subjected to hydrophobization treatment in different manners.
In addition, as for the method of forming the first pixel defining layer 202 and the peeling layer 204, the first pixel defining layer 202 and the peeling layer 204 may be stacked over the substrate 201, and then the pixel unit may be formed by etching. It is also possible to form the pixel unit on the first pixel defining layer 202 by etching, and then process the peeling layer 204 on the first pixel defining layer 202.
When the second pixel defining layer 205 is present, the pixel unit may be formed by first sequentially stacking the first pixel defining layer 202, the peeling layer 204, and the second pixel defining layer 205 on the substrate 201, and then by etching. It is also possible to form a pixel unit on the first pixel defining layer 202 by etching, and then sequentially process the peeling layer 204 and the second pixel defining layer 205 on the first pixel defining layer 202.
In a specific example, when the second pixel defining layer 205 is present, the method of manufacturing the light emitting device 200 includes the steps of:
s201: forming a first pixel defining layer 202 having an opening 203 on a substrate 201; the sidewalls of the opening 203 and the surface of the substrate 201 form a pixel unit. The structure of the light emitting device 200 at this time is shown in fig. 3.
S202: a peeling layer 204 is formed on a surface of the first pixel defining layer 202 away from the substrate 201. The structure of the light emitting device 200 at this time is shown in fig. 4.
S203: a second pixel defining layer 205 is formed on a surface of the peeling layer 204 remote from the first pixel defining layer 202. The structure of the light emitting device 200 at this time is shown in fig. 6.
S204: the functional layer 206 is formed within the pixel unit, and the thickness of the functional layer 206 is less than or equal to the thickness of the first pixel defining layer 202. The structure of the light emitting device 200 at this time is shown in fig. 7.
S205: the peeling layer 204 and the second pixel defining layer 205 are removed. The structure of the light emitting device 200 at this time is shown in fig. 9.
S206: a first electrode layer 207 is formed on the functional layer 206 and the surface of the first pixel defining layer 202. The structure of the light emitting device 200 at this time is shown in fig. 2.
It is understood that the thickness of the first pixel defining layer 202 is 300nm to 700nm. For example, the thickness of the first pixel defining layer 202 may be, but is not limited to, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, or 700nm. The thickness of the release layer 204 is 200nm to 500nm. For example, the thickness of the release layer 204 may be, but is not limited to, 300nm, 250nm, 300nm, 350nm, 400nm, 450nm, or 500nm. The thickness of the second pixel defining layer 205 is 100nm to 500nm. For example, the thickness of the second pixel defining layer 205 may be, but is not limited to, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, or 500nm. The thickness of the first electrode layer 207 is 15nm to 25nm. For example, the thickness of the first electrode layer 207 may be, but is not limited to, 15nm, 18nm, 20nm, 22nm, or 25nm. It is also understood that, in the actual manufacturing process, the thickness of the first pixel defining layer 202, the thickness of the peeling layer 204, the thickness of the second pixel defining layer 205, and the thickness of the first electrode layer 207 may be selected according to the thickness of the functional layer 206.
Still another embodiment of the present invention provides a method for manufacturing a display panel including a light emitting device, including the above method for manufacturing a light emitting device.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the patent of the present invention should be subject to the appended claims, and the description and the drawings can be used for explaining the contents of the claims.
Claims (10)
1. A method for preparing a light-emitting device is characterized by comprising the following steps:
forming a first pixel defining layer with an opening on a substrate, wherein the side wall of the opening and the surface of the substrate form a pixel unit;
forming a peeling layer on a surface of the first pixel defining layer away from the substrate;
forming a functional layer in the pixel unit, wherein the thickness of the functional layer is less than or equal to that of the first pixel defining layer;
removing the peeling layer.
2. A method for manufacturing a light emitting device according to claim 1, further comprising, before forming a functional layer in the pixel unit, the steps of:
the side wall of the opening is subjected to hydrophilization treatment.
3. A method for manufacturing a light emitting device according to claim 1, further comprising, before forming a functional layer in the pixel unit, the steps of:
and performing hydrophobic treatment on the side wall of the stripping layer.
4. The method for manufacturing a light-emitting device according to claim 1, wherein the material of the peeling layer is a magnetic material.
5. The method for manufacturing a light-emitting device according to claim 4, wherein the removing of the peeling layer comprises the steps of:
the peeling layer is disposed toward the magnetic member, and the peeling layer is removed by attraction of the magnetic member.
6. The method for manufacturing a light-emitting device according to claim 5, wherein when removing the peeling layer, before disposing the peeling layer toward the magnetic member, further comprises the steps of:
heating the substrate, and controlling the temperature of the substrate to be 100-300 ℃.
7. The method for manufacturing a light-emitting device according to any one of claims 1 to 6, wherein an absolute value of a difference between an angle formed by a side wall of the peeling layer and the substrate surface and an angle formed by a side wall of the first pixel defining layer and the substrate surface is 30 ° or less.
8. The manufacturing method of a light emitting device according to any one of claims 1 to 6, further comprising, before forming a functional layer in the pixel unit, the steps of:
and forming a second pixel defining layer on the surface of the stripping layer far away from the first pixel defining layer, wherein the absolute value of the difference between the included angle formed by the side wall of the second pixel defining layer and the surface of the substrate and the included angle formed by the side wall of the first pixel defining layer and the surface of the substrate is less than or equal to 30 degrees.
9. The method for manufacturing a light-emitting device according to any one of claims 1 to 6, wherein the thickness of the first pixel defining layer is 300nm to 700nm, and the thickness of the peeling layer is 200nm to 500nm.
10. A method for manufacturing a display panel, wherein the display panel includes a light-emitting device, and the method for manufacturing a display panel includes the method for manufacturing a light-emitting device according to any one of claims 1 to 9.
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