CN115295451A - Bonding apparatus and bonding method - Google Patents
Bonding apparatus and bonding method Download PDFInfo
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- CN115295451A CN115295451A CN202210975978.4A CN202210975978A CN115295451A CN 115295451 A CN115295451 A CN 115295451A CN 202210975978 A CN202210975978 A CN 202210975978A CN 115295451 A CN115295451 A CN 115295451A
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 230000008569 process Effects 0.000 claims description 19
- 230000007306 turnover Effects 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000003292 glue Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
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Abstract
The invention provides a bonding device and a bonding method, which are used for bonding a chip on a wafer, and the bonding device comprises: a carrier film, wherein a plurality of chips are adhered to the first surface; and the pressing unit is arranged above the wafer and comprises a pressing head, and the pressing head is used for pressing the chip bonded on the first surface of the bearing film downwards to the wafer so as to enable the chip to be bonded on the wafer. The technical scheme of the invention can reduce the pollution to the bonding surface of the chip and the falling of the chip in the transmission process, thereby improving the yield of products.
Description
Technical Field
The present invention relates to the field of semiconductors, and more particularly, to a bonding apparatus and a bonding method.
Background
Compared with a three-dimensional stacked chip using a packaging process, the chip-wafer three-dimensional bonding integration technology adopts a bump-free (bump) process, breaks through the input/output density limitation and parasitic effect caused by the size of a bump, and is the most advanced three-dimensional integration technology at present.
At present, the chip-wafer three-dimensional bonding integration technology adopts the steps of taking qualified chips on a cut wafer, then performing interaction of a mechanical arm, and finally positioning and bonding the chips on the required wafer. The method comprises the following specific steps: firstly, as shown in fig. 1a, a cut chip 12 is located on a blue film 11, and a glue is released between the chip 12 and the blue film 11, and a first mechanical arm 13 is positioned to the chip 12 to be grabbed; then, as shown in fig. 1b, the first robot arm 13 grips the chip 12; then, as shown in fig. 1c, after the first robot arm 13 turns the grabbed chip 12 counterclockwise by 90 °, the second robot arm 14 is used to adsorb the chip 12 on the first robot arm 13; then, as shown in fig. 1d, the second robot arm 14 turns the adsorbed chip 12 by 90 ° counterclockwise, and moves the adsorbed chip 12 above the wafer 15 to be bonded, so as to bond the chip 12 on the wafer 15.
However, in the above steps, the first robot arm 13 grabs the bonding surface of the chip 12, which results in a risk of contamination of the bonding surface of the chip 12, and since the requirement of the bonding surface for bonding the chip and the wafer is very high, the contamination of the bonding surface of the chip 12 results in a poor bonded product; further, when the chip 12 on the first robot arm 13 is sucked by the second robot arm 14, the chip 12 may be dropped due to mechanical reasons.
Therefore, the bonding apparatus and the bonding method can be further optimized.
Disclosure of Invention
The invention aims to provide a bonding device and a bonding method, which can reduce pollution to a bonding surface of a chip and drop of the chip in a conveying process, thereby improving the yield of products.
To achieve the above object, the present invention provides a bonding apparatus for bonding a chip to a wafer, the bonding apparatus comprising:
the first surface of the bearing film is adhered with a plurality of chips;
and the pressing unit is arranged above the wafer and comprises a pressing head, and the pressing head is used for pressing the chip bonded on the first surface of the bearing film downwards to the wafer so as to enable the chip to be bonded on the wafer.
Optionally, the bonding apparatus further comprises:
the conveying unit comprises a turnover part, a conveying part and a moving part, wherein the turnover part is used for turning the bearing film from the first face to the second face, the conveying part is used for moving the turned bearing film to the position above the wafer, and the moving part is used for controlling the position of the pressing head to move.
Optionally, the pressing unit further comprises:
and the ultraviolet lamp is used for performing dispergation on the carrier film after bonding so as to enable the chip to be separated from the carrier film.
Optionally, an alignment mark is formed on the chip; the bonding apparatus further includes:
and the alignment module is used for identifying the alignment mark before the pressing head presses the chip bonded on the first surface of the bearing film downwards to the wafer, and controlling the position adjustment of the bearing film to align the chip with the wafer.
Optionally, the alignment mark is located in a part of the thickness or the entire thickness of the chip.
Optionally, the shape of the alignment mark includes at least one of a cross shape, a circle shape, a polygon shape, a circular arc shape, and an L shape.
The invention also provides a bonding method for bonding a chip on a wafer, comprising:
providing a bearing film, wherein a plurality of chips are adhered to the first surface of the bearing film;
and pressing the chip bonded on the first surface of the bearing film downwards towards the wafer by using a pressing head arranged above the wafer so as to bond the chip on the wafer.
Optionally, before pressing the chip bonded to the first surface of the carrier film downward toward the wafer by using a pressing head disposed above the wafer, the bonding method further includes:
turning the bearing film from the first face to the second face upwards by using a turning part;
moving the overturned bearing film to the upper part of the wafer by adopting a conveying part;
and controlling the position movement of the pressing head by using a moving part.
Optionally, the bonding method further includes:
and irradiating the bearing film by adopting an ultraviolet lamp so as to enable the chip to be separated from the bearing film after the bearing film is subjected to dispergation.
Optionally, before the carrier film is turned from the first face up to the second face up by using the turning part, the bonding method further includes:
and forming an alignment mark on the chip by adopting a plasma etching process.
Optionally, the alignment mark is located in a partial thickness or a full thickness of the chip.
Optionally, the shape of the alignment mark includes at least one of a cross shape, a circle shape, a polygon shape, a circular arc shape, and an L shape.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. the bonding apparatus of the present invention includes: a plurality of bearing films of the chips are adhered to the first surface; and the pressing head in the pressing unit is used for pressing the chip bonded on the first surface of the bearing film downwards to the wafer so as to bond the chip on the wafer. According to the bonding device provided by the invention, before the chip is bonded on the wafer, the bonding surface of the chip is not contacted with other parts, so that the pollution to the bonding surface of the chip is reduced, and the yield of bonded products is improved; and the chips are directly conveyed to the upper part of the wafer by taking the bearing film as a carrier, so that the chips are prevented from falling off in the conveying process.
2. The bonding method of the invention comprises the following steps: and pressing the chip bonded on the first surface of the bearing film downwards towards the wafer by using a pressing head arranged above the wafer so as to bond the chip on the wafer. According to the bonding method provided by the invention, before the chip is bonded on the wafer, the bonding surface of the chip is not contacted with other parts, so that the pollution to the bonding surface of the chip is reduced, and the yield of bonded products is improved; and the bearing film is directly adopted as a carrier to convey the chip to the upper part of the wafer, so that the chip is prevented from falling off in the conveying process.
Drawings
FIGS. 1 a-1 d are schematic diagrams of various steps in a bonding method;
FIG. 2 is a flow chart of a bonding method according to an embodiment of the present invention;
FIGS. 3 a-3 g are schematic diagrams of various steps in the bonding method shown in FIG. 2;
FIG. 4 is a diagram illustrating alignment marks on a chip according to an embodiment of the present invention;
FIG. 5 is a diagram illustrating an alignment mark on a chip according to another embodiment of the present invention.
Wherein the reference numerals of figures 1a to 5 are as follows:
11-blue film; 12-a chip; 13-a first robot arm; 14-a second robot arm; 15-a wafer; 21-a chip; 211-alignment marks; 22-a wafer; 23-a carrier film; 24-pressing the head.
Detailed Description
In order to make the objects, advantages and features of the present invention more apparent, the bonding apparatus and the bonding method according to the present invention will be described in further detail below. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
An embodiment of the present invention provides a bonding apparatus for bonding a chip to a wafer, the bonding apparatus including: the first surface of the bearing film is adhered with a plurality of chips; and the pressing unit is arranged above the wafer and comprises a pressing head, and the pressing head is used for pressing the chip bonded on the first surface of the bearing film downwards to the wafer so as to enable the chip to be bonded on the wafer.
The bonding apparatus provided in this embodiment will be described in more detail with reference to fig. 3a to 3g and fig. 4 to 5.
The first surface of the carrier film 23 is coated with adhesive glue, and the first surface of the carrier film 23 is bonded with the plurality of chips 21 by the adhesive glue.
The carrier film 23 may be a film such as a blue film coated with an adhesive, and the carrier film 23 is a translucent or transparent material capable of transmitting light.
In addition, in order to avoid interference between adjacent chips 21 in the subsequent process of bonding the chips 21 to the wafer 22 to be bonded, the elasticity of the carrier film 23 may be utilized, and a crystal expanding machine may be used to pull the carrier film 23, so as to increase the distance between the adjacent chips 21 and enable the chips 21 to be aligned with the chips at the corresponding positions on the wafer 22 to be bonded.
The bonding apparatus further includes a wafer expanding ring (not shown) for fixing the carrier film 23 and tightening the carrier film 23 after expanding the carrier film 23, the wafer expanding ring is located at the edge of the carrier film 23, and the wafer expanding ring surrounds all the chips 21.
The bonding apparatus further includes a robot arm (not shown), and the wafer expanding ring is fixed on the robot arm, so that the carrier film 23 is fixed on the robot arm.
Preferably, the first surface of the carrier film 23 is bonded to the back surface of the chip 21, so that the front surface of the chip 21 can be bonded to the wafer 22, and it is possible to avoid that the adhesive glue adhered to the front surface of the chip 21 cannot be removed cleanly due to the carrier film 23 being bonded to the front surface of the chip 21 when the glue between the carrier film 23 and the chip 21 is released, thereby avoiding affecting the performance of the chip 21. The chip 21 includes a substrate and an insulating medium layer formed on the substrate, a device structure is formed in the insulating medium layer, the back surface of the chip 21 is a surface of the substrate far from the insulating medium layer, and the front surface and the back surface of the chip 21 are opposite surfaces.
As shown in fig. 3a, in the initial state, the first surface of the carrier film 23 faces upward, and if the first surface of the carrier film 23 is bonded to the back surface of the chip 21, the front surface of the chip 21 faces upward.
The bonding apparatus further comprises a conveying unit (not shown) comprising a turning part, a conveying part and a moving part, as shown in fig. 3b, the turning part is used for turning the carrier film 23 to turn the carrier film 23 from the first face to the second face, and the first face and the second face are opposite faces; as shown in fig. 3c, the conveying unit is configured to move the flipped carrier film 23 to a position above the wafer 22 to be bonded, and control the position of the carrier film 23 to move, so that the chip 21 bonded to the first surface of the carrier film 23 is aligned with the corresponding position of the wafer 22; the moving section is used for controlling the pressing head 24 to perform positional movement in the vertical and horizontal directions.
If the carrier film 23 is adhered to the back surface of the chip 21, the chip 21 is turned from the front surface to the back surface.
The mechanical arm is connected with the turning part and the conveying part, the turning part turns over the carrier film 23 through the mechanical arm, and the conveying part moves the carrier film 23 through the mechanical arm.
Therefore, compared with the process of transferring the chips 12 shown in fig. 1a to 1d, the transferring part in this embodiment transfers the chips 21 directly using the carrier film 23 as a carrier in the process of moving the chips 21 over the wafer 22, so as to avoid the transferring part and the robot arm or other parts from directly contacting and transferring the chips 21; before the chips 21 are moved to the upper part of the wafer 22, the chips 21 do not need to be transferred from the carrier film 23 to other parts, so that the chips 21 are prevented from falling off during the transportation process.
The pressing unit is disposed above the wafer 22, and the pressing unit includes a pressing head 24, as shown in fig. 3c to 3e, the pressing head 24 is disposed above the wafer 22, and after the pressing head 24 can move vertically downward to contact the second surface of the carrier film 23, the pressing head continues to press the chip 21 to be bonded, which is bonded to the first surface of the carrier film 23, downward toward the wafer 22, so that the chip 21 is bonded to the wafer 22. The pressing head 24 may press the chips 21 downward from the center of the carrier film 23 to the outer edge of the carrier film 23 one by one, and the number of the chips 21 pressed downward by the pressing head 24 may be one or at least two, that is, at least one chip 21 may be bonded to the wafer 22 by pressing the pressing head 24 downward one time.
Also, as shown in fig. 3f, after all the chips 21 are bonded to the wafer 22, the pressing head 24 may be removed.
As shown in fig. 4 to 5, an alignment mark 211 is formed on the chip 21.
The alignment mark 211 is located in a part of the thickness of the chip 21, and at this time, the alignment mark 211 may be located on the front or back of the chip 21; alternatively, the alignment mark 211 is located in the chip 21 with the whole thickness, that is, the alignment mark 211 penetrates through the chip 21.
The alignment mark 211 is located in a non-functional area of the edge of the chip 21, for example, on a scribe line, so as to avoid affecting the performance of the chip 21.
The alignment marks 211 may be located on the sides of the chip 21 or on the corners of the chip 21.
The shape of the alignment mark 211 may include at least one of a cross shape, a circle shape, a polygon shape, a circular arc shape, an L-shape, and the like.
As shown in fig. 4, in a specific embodiment, a cross-shaped alignment mark 211 is formed at each of four corners of the chip 21, and four alignment marks 211 may be located in a part of the thickness or the whole thickness of the chip 21; in another embodiment, as shown in fig. 5, a quadrilateral area is cut off at each corner of the chip 21, so that an L-shaped alignment mark 211 is formed at each of the four corners of the chip 21, and the alignment mark 211 penetrates through the chip 21.
The bonding apparatus further includes an alignment module (not shown) for identifying the alignment mark 211 on the chip 21 and an alignment mark (not shown) on the wafer 22 before the pressing head 24 presses the chip 21 bonded to the first surface of the carrier film 23 downward toward the wafer 22, so that the chip 21 is aligned with the wafer 22. The alignment module only needs to identify the alignment mark 211 on a part of the chips 21 on the carrier film 23, and the position of the carrier film 23 is controlled by the transmission part, so that all the chips 21 and the wafer 22 can be aligned by performing an alignment operation on the part of the chips 21 and the wafer 22.
And as shown in fig. 3d, after the chip 21 to be bonded on the carrier film 23 is moved above the position to be bonded on the wafer 22, the alignment module is used to identify the alignment mark 211 on the chip 21 to be bonded, so that the pressing head 24 is aligned with the chip 21 to be bonded, and further the pressing head 24 can accurately bond the chip 21 to be bonded on the position to be bonded on the wafer 22.
Therefore, compared with the method shown in fig. 1a to 1d in which a single chip 12 is picked from the blue film 11 at a time, and the picked single chip 12 is aligned with the wafer 15 and then bonded, in this embodiment, all the chips 21 on the carrier film 23 are integrally moved above the wafer 22, and the bonding of all the chips 21 and the wafer 22 is sequentially completed by using the pressing head 24, so that the alignment operation of each chip 21 and the wafer 22 before bonding is not required, thereby simplifying the process steps.
When the alignment mark 211 is identified, if the alignment mark 211 is located in the chip 21 with a partial thickness, when the alignment mark 211 is located on a surface of the chip 21 away from the carrier film 23, the light emitted from the alignment module can pass through the carrier film 23 and the chip 21 with a partial thickness to identify the alignment mark 211; when the alignment mark 211 is located on a surface of the chip 21 contacting the carrier film 23, the alignment mark 211 can be identified after the light emitted from the alignment module passes through the carrier film 23. If the alignment mark 211 is located in the chip 21 with the whole thickness, the alignment mark 211 can be identified after the light emitted from the alignment module passes through the carrier film 23.
The pressing unit further includes an ultraviolet lamp assembly (not shown) for performing debonding of the carrier film 23 after all the chips 21 are bonded on the wafer 22, so that the chips 21 are detached from the carrier film 23. Wherein, the ultraviolet lamp assembly can be adopted to irradiate the whole carrier film 23 at the same time, so that all the chips 21 and the carrier film 23 are debonded. After the dispergation, the carrier film 23 may be removed, as shown in fig. 3 g.
In summary, the bonding apparatus provided by the present invention includes: the first surface of the bearing film is adhered with a plurality of chips; and the pressing unit is arranged above the wafer and comprises a pressing head, and the pressing head is used for pressing the chip bonded on the first surface of the bearing film downwards to the wafer so as to enable the chip to be bonded on the wafer. According to the bonding device provided by the invention, before the chip is bonded on the wafer, the bonding surface of the chip is not contacted with other parts, so that the pollution to the bonding surface of the chip is reduced, and the yield of bonded products is improved; and the chips are directly conveyed to the upper part of the wafer by taking the bearing film as a carrier, so that the chips are prevented from falling off in the conveying process.
An embodiment of the present invention provides a bonding method for bonding a chip on a wafer, and referring to fig. 2, fig. 2 is a flowchart of the bonding method according to an embodiment of the present invention, and as can be seen from fig. 2, the bonding method includes:
step S1, providing a bearing film, wherein a plurality of chips are adhered to a first surface of the bearing film;
and S2, pressing the chip bonded on the first surface of the bearing film downwards to the wafer by using a pressing head arranged above the wafer so as to bond the chip on the wafer.
The bonding method provided in this embodiment is described in more detail below with reference to fig. 3a to 3g and fig. 4 to 5:
according to the step S1, referring to fig. 3a, a carrier film 23 is provided, a first surface of the carrier film 23 is coated with an adhesive glue, and a plurality of chips 21 are adhered to the first surface of the carrier film 23 through the adhesive glue.
The carrier film 23 may be a film such as a blue film coated with an adhesive, and the carrier film 23 is a translucent or transparent material capable of transmitting light.
A device wafer (not shown) is adhered to the first surface of the carrier film 23, and then the device wafer is diced to obtain a plurality of chips 21, so that the plurality of chips 21 are adhered to the first surface of the carrier film 23.
In order to avoid interference between adjacent chips 21 in the subsequent process of bonding the chips 21 on the wafer 22 to be bonded, after the device wafer is cut, the elasticity of the carrier film 23 may be utilized, and a crystal expanding machine may be used to pull the carrier film 23 to expand the crystal of the carrier film 23, so that the distance between adjacent chips 21 is increased, and the chips 21 can be aligned with the chips at the corresponding positions on the wafer 22 to be bonded.
After the carrier film 23 is subjected to the die-expanding process, the carrier film 23 may be fixed on a die-expanding ring (not shown) which is located at an edge of the carrier film 23, the die-expanding ring surrounds all the chips 21, and the die-expanding ring is used for tightening the carrier film 23; the wafer expanding ring is fixed on a robot arm (not shown), so that the carrier film 23 is fixed on the robot arm.
Preferably, the first surface of the carrier film 23 is bonded to the back surface of the chip 21, so that the front surface of the chip 21 can be bonded to the wafer 22, and it can be avoided that the adhesive glue adhered to the front surface of the chip 21 cannot be completely removed due to the carrier film 23 bonding the front surface of the chip 21 when the carrier film 23 and the chip 21 are subsequently de-glued, thereby avoiding affecting the performance of the chip 21. The chip 21 includes a substrate and an insulating medium layer formed on the substrate, a device structure is formed in the insulating medium layer, the back surface of the chip 21 is a surface of the substrate far from the insulating medium layer, and the front surface and the back surface of the chip 21 are opposite surfaces.
As shown in fig. 3a, the first surface of the carrier film 23 faces upward, and if the first surface of the carrier film 23 is bonded to the back surface of the chip 21, the front surface of the chip 21 faces upward.
Also, a transfer unit (not shown) is provided, the transfer unit including a turning section, a transfer section, and a moving section; before subsequently pressing the chip 21 bonded to the first surface of the carrier film 23 downward toward the wafer 22 by using the pressing head 24 disposed above the wafer 22, the bonding method may further include: first, referring to fig. 3b, the carrier film 23 is turned over by the turning part to turn over the carrier film 23 from the first side to the second side, where the first side and the second side are opposite; then, as shown in fig. 3c, the carrier film 23 after being turned over is moved to above the wafer 22 to be bonded by using a conveying part; then, the pressing head 24 is controlled to perform positional movement in the vertical and horizontal directions by a moving section.
If the carrier film 23 is adhered to the back surface of the chip 21, the chip 21 is turned from the front surface to the back surface.
The mechanical arm is connected with the turning part and the transmission part, the turning part turns the carrier film 23 through the mechanical arm, and the transmission part moves the carrier film 23 through the mechanical arm.
Therefore, compared with the process of transferring the chips 12 shown in fig. 1a to 1d, in the present embodiment, in the process of moving the chips 21 to above the wafer 22, the carrier film 23 is directly used as a carrier to transfer the chips 21, so that the transfer portion and the robot arm and other components are prevented from directly contacting and transferring the chips 21; before the chips 21 are moved to the upper part of the wafer 22, the chips 21 do not need to be transferred from the carrier film 23 to other parts, so that the chips 21 are prevented from falling off during the transportation process.
According to step S2, referring to fig. 3d to fig. 3f, the pressing head 24 disposed above the wafer 22 is used to move down vertically to contact the second surface of the carrier film 23, and the chip 21 bonded to the first surface of the carrier film 23 is continuously pressed down toward the wafer 22, so that the chip 21 is bonded to the wafer 22. The pressing head 24 may press the chips 21 downward from the center of the carrier film 23 to the outer edge of the carrier film 23 one by one, and the number of the chips 21 pressed downward by the pressing head 24 may be one or at least two, that is, at least one chip 21 may be bonded to the wafer 22 by pressing the pressing head 24 downward one time.
Also, as shown in fig. 3f, after all the chips 21 are bonded to the wafer 22, the pressing head 24 may be removed.
In addition, referring to fig. 4 to 5, before the carrier film 23 is turned from the first face up to the second face up by using the turning part, the bonding method may further include: and etching the chip 21 by adopting a plasma etching process to form an alignment mark 211 on the chip 21. And, before or after the device wafer is cut to form a plurality of chips 21, the alignment mark 211 may be formed by etching using a plasma etching process.
It should be noted that, in other embodiments, the alignment mark 211 may also be formed on the chip 21 by laser irradiation.
The alignment mark 211 is located in a part of the thickness of the chip 21, and at this time, the alignment mark 211 may be located on the front or back of the chip 21; alternatively, the alignment mark 211 is located in the chip 21 with the whole thickness, that is, the alignment mark 211 penetrates through the chip 21.
The alignment mark 211 is located in a non-functional area at the edge of the chip 21, such as on a scribe line, to avoid affecting the performance of the chip 21.
The alignment marks 211 may be located on the sides of the chip 21 or on the corners of the chip 21.
The shape of the alignment mark 211 may include at least one of a cross shape, a circle shape, a polygon shape, a circular arc shape, an L-shape, and the like.
As shown in fig. 4, in a specific embodiment, a cross-shaped alignment mark 211 is formed at each of four corners of the chip 21, and four alignment marks 211 may be located in a part of the thickness or the whole thickness of the chip 21; in another embodiment, as shown in fig. 5, a quadrilateral region is cut off at each corner of the chip 21, so that an L-shaped alignment mark 211 is formed at each of the four corners of the chip 21, and the alignment mark 211 penetrates through the chip 21.
And, after moving the flipped carrier film 23 above the wafer 22 by the transfer part and before moving the pressing head 24 vertically downward by the moving part, the bonding method further includes: as shown in fig. 3d, an alignment module (not shown) is used to identify the alignment mark 211 and an alignment mark (not shown) on the wafer 22, and the position of the carrier film 23 is adjusted by the transmission part, so that the chip 21 is aligned with the wafer 22. The alignment module only needs to identify the alignment marks 211 on part of the chips 21 on the carrier film 23, and the alignment operation is performed on part of the chips 21 and the wafer 22 to achieve the alignment of all the chips 21 and the wafer 22.
After the chip 21 is aligned with the wafer 22, the alignment module may further be used to identify an alignment mark 211 on the chip 21 to be bonded, so that the pressing head 24 is aligned with the chip 21 to be bonded, and the pressing head 24 can accurately bond the chip 21 to be bonded to the position to be bonded on the wafer 22.
Therefore, compared with the method shown in fig. 1a to 1d in which a single chip 12 is picked from the blue film 11 each time, and the picked single chip 12 is aligned with the wafer 15 and then bonded, in this embodiment, all the chips 21 on the carrier film 23 are integrally moved above the wafer 22, and bonding is sequentially completed by using the pressing head 24 to bond all the chips 21 and the wafer 22, so that it is not necessary to perform an alignment operation on each chip 21 and the wafer 22 before bonding, thereby simplifying the process steps.
When the alignment mark 211 is identified, if the alignment mark 211 is located in the chip 21 with a partial thickness, when the alignment mark 211 is located on a surface of the chip 21 away from the carrier film 23, the light emitted by the alignment module can pass through the carrier film 23 and the chip 21 with a partial thickness to identify the alignment mark 211; when the alignment mark 211 is located on a surface of the chip 21 contacting the carrier film 23, the alignment mark 211 can be identified after the light emitted from the alignment module passes through the carrier film 23. If the alignment mark 211 is located in the chip 21 with the whole thickness, the alignment mark 211 can be identified after the light emitted from the alignment module passes through the carrier film 23.
After bonding all the chips 21 to the wafer 22, the bonding method further includes: and simultaneously irradiating the whole carrier film 23 by adopting an ultraviolet lamp assembly so as to perform dispergation on the carrier film 23 and separate the chip 21 from the carrier film 23. After the dispergation, the carrier film 23 may be removed, as shown in fig. 3 g.
In summary, the bonding method provided by the present invention includes: providing a bearing film, wherein a plurality of chips are adhered to the first surface of the bearing film; and pressing the chip bonded on the first surface of the bearing film downwards towards the wafer by using a pressing head arranged above the wafer so as to bond the chip on the wafer. According to the bonding method provided by the invention, before the chip is bonded on the wafer, the bonding surface of the chip is not contacted with other parts, so that the pollution to the bonding surface of the chip is reduced, and the yield of bonded products is improved; and the chip is directly conveyed to the upper part of the wafer by adopting the bearing film as a carrier, so that the chip is prevented from falling off in the conveying process.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (12)
1. A bonding apparatus for bonding a chip to a wafer, the bonding apparatus comprising:
the first surface of the bearing film is adhered with a plurality of chips;
and the pressing unit is arranged above the wafer and comprises a pressing head, and the pressing head is used for pressing the chip bonded on the first surface of the bearing film downwards to the wafer so as to enable the chip to be bonded on the wafer.
2. The bonding apparatus of claim 1, wherein the bonding apparatus further comprises:
the conveying unit comprises a turnover part, a conveying part and a moving part, wherein the turnover part is used for turning the bearing film from the first surface to the second surface, the conveying part is used for moving the turned bearing film to the upper part of the wafer, and the moving part is used for controlling the position of the pressing head to move.
3. The bonding apparatus of claim 1, wherein the pressing unit further comprises:
and the ultraviolet lamp is used for performing dispergation on the carrier film after bonding so as to enable the chip to be separated from the carrier film.
4. The bonding apparatus of claim 1, wherein the chip has alignment marks formed thereon; the bonding apparatus further includes:
and the alignment module is used for identifying the alignment mark before the pressing head presses the chip bonded on the first surface of the bearing film downwards to the wafer, and controlling the position adjustment of the bearing film so as to align the chip with the wafer.
5. The bonding apparatus of claim 4, wherein the alignment mark is located in a portion or all of the thickness of the chip.
6. The bonding apparatus of claim 4, wherein the alignment mark has a shape including at least one of a cross, a circle, a polygon, a circular arc, and an L-shape.
7. A bonding method for bonding a chip to a wafer, the bonding method comprising:
providing a bearing film, wherein a plurality of chips are adhered to the first surface of the bearing film;
and pressing the chip bonded on the first surface of the bearing film downwards towards the wafer by using a pressing head arranged above the wafer so as to bond the chip on the wafer.
8. The bonding method according to claim 7, wherein before the chip bonded to the first surface of the carrier film is pressed down toward the wafer with a pressing head disposed above the wafer, the bonding method further comprises:
turning the bearing film from the first surface to the second surface upwards by using a turning part;
moving the overturned bearing film to the upper part of the wafer by adopting a conveying part;
and controlling the position movement of the pressing head by using a moving part.
9. The bonding method of claim 7, further comprising:
and irradiating the bearing film by adopting an ultraviolet lamp so as to enable the chip to be separated from the bearing film after the bearing film is subjected to dispergation.
10. The bonding method according to claim 8, wherein before the carrier film is flipped from the first face up to the second face up using the flip part, the bonding method further comprises:
and forming an alignment mark on the chip by adopting a plasma etching process.
11. The bonding method of claim 10, wherein the alignment mark is located in a partial thickness or a full thickness of the chip.
12. The bonding method according to claim 10, wherein the shape of the alignment mark comprises at least one of a cross shape, a circular shape, a polygonal shape, a circular arc shape, and an L-shape.
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