CN115021822B - Optical transmission system - Google Patents
Optical transmission system Download PDFInfo
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- CN115021822B CN115021822B CN202210512021.6A CN202210512021A CN115021822B CN 115021822 B CN115021822 B CN 115021822B CN 202210512021 A CN202210512021 A CN 202210512021A CN 115021822 B CN115021822 B CN 115021822B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/283—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for beam splitting or combining
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/564—Power control
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The application discloses an optical transmission system, which comprises a polarized beam combining optical path, a mutual excitation optical path and two semiconductor optical amplifying units, wherein each semiconductor optical amplifying unit comprises a first lens, a semiconductor optical amplifier chip and a second lens which are sequentially arranged, the polarized beam combining optical path is arranged at one side of the first lens, which is opposite to the semiconductor optical amplifier chip, and the mutual excitation optical path is arranged at one side of the second lens, which is opposite to the semiconductor optical amplifier chip, so that light beams output by the rear ends of the two semiconductor optical amplifier chips can be respectively input into the semiconductor optical amplifier chips which are respectively different from each other after passing through the mutual excitation optical path, and two gain beams are integrated into one parallel light and output through the polarized beam combining optical path.
Description
Technical Field
The present application relates to the field of optical technologies, and in particular, to an optical transmission system.
Background
In the assembly of optical devices, due to insertion loss and coupling loss in an optical path, optical energy pair loss can be caused, signal quality is reduced, and the current higher and higher requirements on communication equipment are difficult to meet.
Disclosure of Invention
The application provides an optical transmission system, which can gain the light beams of two semiconductor optical amplifying units by using mutual excitation light paths to obtain two gain light beams, and then combine the two gain light beams together to form a parallel light beam by using a polarization beam combining light path, so that the output power is doubled while the light beam quality of the output parallel light beam is higher.
The application provides an optical transmission system, which comprises a polarized beam combining optical path, a mutual excitation optical path and two semiconductor optical amplifying units, wherein each semiconductor optical amplifying unit comprises a first lens, a semiconductor optical amplifier chip and a second lens which are sequentially arranged, the polarized beam combining optical path is arranged at one side of the first lens, which is opposite to the semiconductor optical amplifier chip, and the mutual excitation optical path is arranged at one side of the second lens, which is opposite to the semiconductor optical amplifier chip, so that light beams output by the rear ends of the two semiconductor optical amplifier chips can be respectively input into the semiconductor optical amplifier chips which are respectively different from each other after passing through the mutual excitation optical path, and two gain beams are integrated into one parallel light and output through the polarized beam combining optical path.
In the optical transmission system according to an embodiment of the present application, the semiconductor optical amplifier chip is an SOA chip, and the first lens and the second lens are respectively disposed at an optical input port and an optical output port of the SOA chip, and are configured to adjust divergent light emitted from two ends of the SOA chip into parallel light.
In the optical transmission system according to an embodiment of the present application, the SOA chip includes a first SOA chip and a second SOA chip, the mutual excitation optical path includes a first excitation optical path, and a light beam output from the rear end of the first SOA chip is input to the second SOA chip after passing through the first excitation optical path to form one gain light beam.
In the optical transmission system according to an embodiment of the present application, the first excitation optical path includes a first beam splitter, a second beam splitter, and a first isolator, and the first beam splitter and the second beam splitter are disposed at both ends of the first isolator.
In the optical transmission system according to an embodiment of the present application, the mutual excitation optical path includes a second excitation optical path, and the light beam output from the rear end of the second SOA chip is input to the first SOA chip after passing through the second excitation optical path to form another gain light beam.
In the optical transmission system according to an embodiment of the present application, the second excitation optical path includes a first total reflection mirror, a second total reflection mirror, and a second isolator, and the first total reflection mirror and the second total reflection mirror are disposed at both ends of the second isolator.
In the optical transmission system according to an embodiment of the present application, the first isolator on the first excitation light path is installed in a direction opposite to the second isolator on the second excitation light path.
In the optical transmission system according to an embodiment of the present application, the first beam splitter on the first excitation optical path has a first beam splitting ratio, the second beam splitter has a second beam splitting ratio, and a sum of the first beam splitting ratio and the second beam splitting ratio is equal to 1.
In an embodiment of the present application, the polarization beam combining optical path includes a third total reflection mirror and a polarization beam combiner, where the polarization beam combiner is disposed at a front end of a first SOA chip and has a first side and a second side that are adjacent to each other, and the third total reflection mirror is disposed at a front end of the second SOA chip, so that a gain beam emitted from the second SOA chip can be reflected by the third total reflection mirror and input into the polarization beam combiner and combined with the gain beam emitted from the first SOA chip into a parallel beam.
In the optical transmission system according to an embodiment of the present application, the polarization beam combining optical path includes a third isolator and a fourth isolator, the third isolator is disposed between the first SOA chip and the polarization beam combiner, and the fourth isolator is disposed between the second SOA chip and the third total reflection mirror.
The technical scheme provided by the embodiment of the application can have the following beneficial effects: the application designs an optical transmission system, which comprises a polarized beam combining optical path, a mutual excitation optical path and two semiconductor optical amplifying units, wherein the polarized beam combining optical path is arranged at the front ends of the two semiconductor optical amplifying units, and the mutual excitation optical path is arranged at the rear ends of the two semiconductor optical amplifying units, so that the mutual excitation optical path can be utilized to gain the light beams of the two semiconductor optical amplifying units and obtain two gain light beams, and then the two gain light beams are combined together to form a beam of parallel light through the polarized beam combining optical path, so that the output parallel light beam quality is higher and the output power is doubled.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application as claimed.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an optical transmission system according to an embodiment of the present application;
FIG. 2 is a schematic view of the optical transmission system of FIG. 1 at another angle;
FIG. 3 is a schematic optical path diagram of the first excitation optical path of FIG. 1;
FIG. 4 is a schematic optical path diagram of the second excitation optical path of FIG. 1;
fig. 5 is a schematic diagram of the optical path of the polarized combined beam optical path of fig. 1.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
Some embodiments of the present application are described in detail below with reference to the accompanying drawings. The following embodiments and features of the embodiments may be combined with each other without conflict.
As shown in fig. 1 to 5, the optical transmission system provided by the present application includes a polarization beam combining optical path 200, a mutual excitation optical path 100 and two semiconductor optical amplifying units, which are a first semiconductor optical amplifying unit 10 and a second semiconductor optical amplifying unit 20, respectively, wherein each semiconductor optical amplifying unit includes a first lens, a semiconductor optical amplifier chip and a second lens, which are sequentially disposed, the polarization beam combining optical path is disposed on a side of the first lens facing away from the semiconductor optical amplifier chip, and the mutual excitation optical path is disposed on a side of the second lens facing away from the semiconductor optical amplifier chip, so that the light beams output from the rear ends of the two semiconductor optical amplifier chips can be respectively input into the semiconductor optical amplifier chips different from each other after passing through the mutual excitation optical path and form two gain light beams, and then the two gain light beams are integrated into a parallel light and output device through the polarization beam combining optical path 200, so that the output parallel light beams have higher quality, and the output power of the parallel light beams can be ensured to be doubled.
Illustratively, the semiconductor optical amplifier chip includes a first semiconductor optical amplifier chip 11 and a second semiconductor optical amplifier chip 21, the first lens includes a first chip lens 13 and a third chip lens 23, the second lens includes a second chip lens 12 and a fourth chip lens 22, the first semiconductor optical amplifier chip 11 is disposed between the first chip lens 13 and the second chip lens 12 to constitute a first semiconductor optical amplifying unit 10, the second semiconductor optical amplifier chip 21 is disposed between the third chip lens 23 and the fourth chip lens 22 to constitute a second semiconductor optical amplifying unit 20, the mutual excitation optical path 100 is disposed on a side of the second chip lens 12 and the fourth chip lens 22 facing away from the first semiconductor optical amplifier chip 11 and the second semiconductor optical amplifier chip 21, and the polarization combined beam optical path 200 is disposed on a side of the first chip lens 13 and the third chip lens 23 facing away from the first semiconductor optical amplifier chip 11 and the second semiconductor optical amplifier chip 21.
In an alternative embodiment, the semiconductor optical amplifier chip is an SOA chip, and is capable of emitting ASE light, wherein the first lens and the second lens are respectively disposed at an optical inlet and an optical outlet of the SOA chip, and are used for adjusting divergent light emitted from two ends of the SOA chip into parallel light.
The first semiconductor optical amplifier chip 11 and the second semiconductor optical amplifier chip 21 are SOA chips, and the working principle is the same as that of a semiconductor laser, so that the semiconductor optical amplifier chip has the advantages of supporting high speed, high bandwidth, low power consumption, high gain, miniaturization, easy integration and the like. When the SOA chips are powered up, the parallel light beams output from the rear ends of the SOA chips can enter the mutual excitation light path 100 after passing through the second chip lens 12 or the fourth chip lens 22, and then are respectively input into the SOA chips which are respectively different from each other to form gain light beams.
Specifically, when the first semiconductor optical amplifier chip 11 is powered on, the parallel light beam output from the rear end of the first semiconductor optical amplifier chip 11 can enter the mutual excitation optical path 100 after passing through the second chip lens 12, and enter the second semiconductor optical amplifier chip 21 to form one gain light beam after being refracted or reflected by the mutual excitation optical path 100.
When the second semiconductor optical amplifier chip 21 is powered on, the parallel light beams output from the rear end of the second semiconductor optical amplifier chip 21 can enter the mutual excitation light path 100 after passing through the fourth chip lens 22, enter the first semiconductor optical amplifier chip 11 after being refracted or reflected by the mutual excitation light path 100 to form another gain light beam, and the two gain light beams are output from the front ends of the first semiconductor optical amplifier chip 11 and the second semiconductor optical amplifier chip 21 and are integrated into one parallel light beam through the polarization beam combining light path 200 and output devices,
the first chip lens 13 and the second chip lens 12 are respectively disposed at the light inlet and the light outlet of the first semiconductor optical amplifier chip 11, and the third chip lens 23 and the fourth chip lens 22 are respectively disposed at the light inlet and the light outlet of the second semiconductor optical amplifier chip 21, so that divergent light emitted from both ends of the first semiconductor optical amplifier chip 11 and the second semiconductor optical amplifier chip 21 can be adjusted to parallel light.
The SOA chip includes a first SOA chip and a second SOA chip, and the mutual excitation optical path 100 includes a first excitation optical path, where a beam output from the rear end of the first SOA chip is input to the second SOA chip after passing through the first excitation optical path to form one gain beam, so as to amplify the beam output from the rear end of the first SOA chip or provide a gain function.
The mutual excitation optical path further includes a second excitation optical path, and the light beam output by the rear end of the second SOA chip is input to the first SOA chip after passing through the second excitation optical path to form another gain light beam, so as to amplify the light beam output by the rear end of the second SOA chip or provide a gain function.
In an alternative embodiment, the first excitation optical path includes a first beam splitter 31, a second beam splitter 32 and a first isolator 33, where the first beam splitter 31 and the second beam splitter 32 are disposed at two ends of the first isolator 33, the light beam output at the rear end of the first SOA chip is split into two parallel light beams with a certain proportion of power by the first beam splitter 31, and a part of the parallel light beams sequentially pass through the first isolator 33 and the second beam splitter 32 and are input to the second SOA chip, and since the first isolator 33 is an optical isolator, the first SOA chip and the second SOA chip are both two-end devices, and noise light is output at two ends and amplified, the first isolator 33 can block the reverse light of the second SOA chip, so that the reverse light of the second SOA chip can be prevented from affecting the light transmission of the second SOA chip, and the reverse light of the first SOA chip can be input to the second SOA chip through the first isolator 33 to be amplified or gain, so as to realize that the signal transmission does not affect the stability of the whole transmission system.
In an alternative embodiment, the second excitation optical path includes a first total reflection mirror 41, a second total reflection mirror 42 and a second isolator 43, where the first total reflection mirror 41 and the second total reflection mirror 42 are disposed at two ends of the second isolator 43, after the light beam output at the rear end of the second SOA chip is reflected by the first total reflection mirror 41, a certain proportion of parallel light is input to the second total reflection mirror 42 through the second isolator 43, and the light beam enters the first SOA chip after being reflected by the second total reflection mirror 42 to be amplified or gained, where the second isolator 43 can block the reverse light of the first SOA chip, so that the reverse light of the first SOA chip can be prevented from affecting the light transmission of the first SOA chip, so that the signal amplification transmission can be implemented without affecting the stability of the whole transmission system.
In an alternative embodiment, the installation direction of the first isolator 33 on the first excitation light path is opposite to the installation direction of the second isolator 43 on the second excitation light path, so that part of light on the first SOA chip can be input into the second SOA chip through the first isolator 33, and another part of light on the first SOA chip can not be input into the second SOA chip after passing through the second isolator 43 by being blocked by the reverse blocking function; similarly, a part of light on the second SOA chip can be input into the first SOA chip through the second isolator 43, and another part of light on the second SOA chip can not be input into the first SOA chip after passing through the first isolator 33 by being blocked by the reverse blocking function.
In an alternative embodiment, the first beam splitter 31 on the first excitation light path has a first beam splitting ratio, and the second beam splitter 32 has a second beam splitting ratio, and the sum of the first beam splitting ratio and the second beam splitting ratio is equal to 1. After the first beam splitter 31, the first isolator 33, and the second beam splitter 32, the light output from the rear end of the first SOA chip has a maximum input value=the coupling efficiency of the optical path of the first optical splitter and the second optical splitter output when the first SOA chip operates with current.
In an alternative embodiment, the polarization beam combining optical path 200 includes a third total reflection mirror 52 and a polarization beam combiner 51, where the polarization beam combiner 51 is disposed at the front end of the first SOA chip and has a first side and a second side that are adjacent, and the third total reflection mirror 52 is disposed at the front end of the second SOA chip, so that a gain beam emitted on the second SOA chip can be reflected by the third total reflection mirror 52 and input into the polarization beam combiner 51 from the first side, and the gain beam emitted on the first SOA chip is input into the polarization beam combiner 51 from the second side, and the two gain beams are combined into one parallel beam, so that the output power is doubled while the beam quality of the output parallel beam is higher.
In an alternative embodiment, the polarization beam combining optical path 200 includes a third isolator 53 and a fourth isolator 54, where the third isolator 53 is disposed between the first SOA chip and the polarization beam combiner 51, and the fourth isolator 54 is disposed between the second SOA chip and the third total reflection mirror 52, and the first SOA chip and the second SOA chip in the optical transmission system are mainly used to mutually excite each other, and then two gain beams or gain amplified light are generated, and then the two gain beams are polarization combined by the polarization beam combiner 51, so that ASE optical power output above 18dBm can be obtained.
Specifically, since it is difficult for manufacturers of SOA chips to achieve ASE optical power output of a single chip level of more than 18dBm, and considering the effect of reducing risple, the output of SOA chips is far lower than 18dBm. Especially in the assembly of the device, the final total output optical power of the device is far below 18dBm due to the insertion loss and coupling loss in the optical path, and can only reach about 15dBm basically.
The first SOA chip and the second SOA chip are assembled in parallel in the device, and then two spectroscopes with a certain light splitting ratio and two total reflectors are assembled at the rear ends of the first SOA chip and the second SOA chip respectively, so that two mutual excitation light paths are formed. Isolators are added in the polarized beam combining optical path 200 and the mutual excitation optical path 100 of the first SOA chip and the second SOA chip respectively, so that standing wave problems caused by back and forth reflection of light beams are prevented.
By selecting a spectroscope of suitable spectral ratio, the magnitude of the optical power input to the first or second SOA chip from the mutual excitation optical path 100 can be controlled to prevent the maximum input optical power of the first or second SOA chip from being exceeded. When the first SOA chip and the second SOA chip are powered up to emit light, in the two mutually excited light paths 100, ASE light emitted from the rear end of one semiconductor optical amplifier chip is input into the other semiconductor optical amplifier chip, gain amplification is generated in the semiconductor optical amplifier chip by the input light, amplified ASE light is emitted from the front end of the semiconductor optical amplifier chip, and finally, two gain light beams of the polarized beam combining light path 200 are combined into one beam through the third total reflection mirror 52 and the polarized beam combiner 51, so that the output ASE light power can meet the optical power requirement of more than 18dBm.
In the description of the present application, it should be noted that the terms "mounted," "connected," and "coupled" are to be construed broadly, as well as, for example, fixedly coupled, detachably coupled, or integrally coupled, unless otherwise specifically indicated and defined. Either mechanically or electrically. Can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
The above disclosure provides many different embodiments, or examples, for implementing different structures of the application. The foregoing description of specific example components and arrangements has been presented to simplify the present disclosure. They are, of course, merely examples and are not intended to limit the application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present application provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the application of other processes and/or the use of other materials.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present application have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the application, the scope of which is defined by the claims and their equivalents.
Claims (4)
1. The optical transmission system is characterized by comprising a polarized beam combining optical path, a mutual excitation optical path and two semiconductor optical amplifying units, wherein each semiconductor optical amplifying unit comprises a first lens, a semiconductor optical amplifier chip and a second lens which are sequentially arranged, the polarized beam combining optical path is arranged at one side of the first lens, which is opposite to the semiconductor optical amplifier chip, and the mutual excitation optical path is arranged at one side of the second lens, which is opposite to the semiconductor optical amplifier chip, so that light beams output by the rear ends of the two semiconductor optical amplifier chips can be respectively input into the semiconductor optical amplifier chips which are respectively different from each other after passing through the mutual excitation optical path, and two gain beams are integrated into one parallel light and output through the polarized beam combining optical path; the semiconductor optical amplifier chip is an SOA chip, and the first lens and the second lens are respectively arranged at an optical inlet and an optical outlet of the SOA chip and are used for adjusting divergent light emitted from two ends of the SOA chip into parallel light; the optical fiber comprises an optical fiber array, a first optical fiber array, a second optical fiber array and a second optical fiber array, wherein the optical fiber array comprises a first optical fiber array and a second optical fiber array, the optical fiber array comprises a first optical fiber array, a second optical fiber array and a second optical fiber array, the optical fiber array comprises a plurality of optical fiber arrays, the optical fiber arrays comprises a first optical fiber array, the optical fiber array comprises a second optical fiber array, and the optical fiber array comprises a second optical fiber array and a second optical fiber array, and the optical fiber array which is output by the first optical fiber array and the second optical fiber array is transmitted to; the first excitation light path comprises a first spectroscope, a second spectroscope and a first isolator, and the first spectroscope and the second spectroscope are arranged at two ends of the first isolator; the mutual excitation light path comprises a second excitation light path, and a light beam output by the rear end of the second SOA chip is input to the first SOA chip after passing through the second excitation light path so as to form another gain light beam; the second excitation light path comprises a first total reflection mirror, a second total reflection mirror and a second isolator, and the first total reflection mirror and the second total reflection mirror are arranged at two ends of the second isolator; the mounting direction of the first isolator on the first excitation light path is opposite to the mounting direction of the second isolator on the second excitation light path.
2. The optical transmission system of claim 1, wherein the first beam splitter on the first excitation light path has a first beam splitting ratio and the second beam splitter has a second beam splitting ratio, and wherein a sum of the first beam splitting ratio and the second beam splitting ratio is equal to 1.
3. The optical transmission system of claim 1, wherein the polarization beam combining optical path includes a third total reflection mirror and a polarization beam combiner, the polarization beam combiner is disposed at a front end of the first SOA chip and has a first side and a second side adjacent to each other, and the third total reflection mirror is disposed at a front end of the second SOA chip, so that a gain beam emitted from the second SOA chip can be reflected by the third total reflection mirror and input into the polarization beam combiner and combined with the gain beam emitted from the first SOA chip into a parallel beam.
4. The optical transmission system of claim 3, wherein the polarization beam combining optical path includes a third isolator disposed between the first SOA chip and the polarization beam combiner and a fourth isolator disposed between the second SOA chip and a third total reflection mirror.
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| CN202210512021.6A CN115021822B (en) | 2022-05-12 | 2022-05-12 | Optical transmission system |
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| CN114019617A (en) * | 2021-10-19 | 2022-02-08 | 昂纳信息技术（深圳）有限公司 | Optical signal transmission system |
| CN114415295A (en) * | 2022-01-17 | 2022-04-29 | 成都市德科立菁锐光电子技术有限公司 | Light emitting device, optical module and method for improving optical power |
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