CN114978093A - Acoustic wave resonator, filter, communication apparatus, and method of manufacturing the same - Google Patents
Acoustic wave resonator, filter, communication apparatus, and method of manufacturing the same Download PDFInfo
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Abstract
The embodiment of the invention provides an acoustic wave resonator, a filter, communication equipment and a manufacturing method thereof, wherein the acoustic wave resonator comprises: a substrate; the concave part is formed in the substrate or the epitaxial layer on the substrate, and the concave part has an opening profile on the surface of the substrate or the surface of the epitaxial layer; the lower electrode is in contact with the plane where the opening outline is located; a piezoelectric layer formed on the lower electrode; an upper electrode formed on the piezoelectric layer; wherein the lower electrode profile of the lower electrode has at least three intersection points with the opening profile, and the distance from the intersection point of the first straight line and the first partial profile to the centroid is greater than the distance from the intersection point of the first straight line and the second partial profile to the centroid.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an acoustic wave resonator, a filter, communication equipment and a manufacturing method thereof.
Background
In the field of semiconductor manufacturing technology, there are Film Bulk Acoustic Resonators (FBARs), surface acoustic wave resonators (SAW), etc., of which Film Bulk Acoustic Resonators (FBARs) are more suitable for portable communication devices, which are compatible with standard integrated manufacturing techniques. As shown in fig. 1, where fig. 1 is a cross-sectional view taken along a-a in fig. 3, a conventional thin film bulk acoustic resonator is generally structured to include a substrate 101, a cavity 102 formed in the substrate 101, a lower electrode 103, an upper electrode 105, and a piezoelectric layer 104 sandwiched between the upper and lower electrodes. Wherein the upper and lower electrodes and the piezoelectric layer form a "sandwich" structure. In the case where an input electric signal is applied between the upper and lower electrodes, the reverse piezoelectric effect causes the piezoelectric layer to mechanically expand or contract due to polarization of the piezoelectric material. As the input electrical signal changes over time, the expansion and contraction of the piezoelectric layer generates acoustic waves that propagate in various directions and are converted into electrical signals by the piezoelectric effect.
As shown in fig. 2 in the prior art, the lower electrode 103 of the "sandwich" structure completely covers the cavity 102, so that the contact area between the sandwich structure and the substrate outside the cavity 102 of the Film Bulk Acoustic Resonator (FBAR) is large, and during the operation of the Film Bulk Acoustic Resonator (FBAR), considerable energy leaks outwards along the overlapping part of the boundary, thereby affecting the quality factor and performance of the product.
Further, in order to release the sacrificial layer to form the cavity 102 and to reduce the influence of the release hole on the sandwich structure, the release hole 106 needs to be arranged slightly off the cavity, as shown in fig. 3, so that an additional release channel 107 is needed to extend the release hole 106 into the cavity, which results in increased process difficulty on one hand and unclean release of the cavity material on the other hand.
Disclosure of Invention
In view of this, embodiments of the present invention provide an acoustic wave resonator, a filter, a communication device, and a manufacturing method thereof, so as to solve the technical problems in the prior art that difficulty in forming a cavity is high, and a cavity material is not easily released cleanly.
According to a first aspect, an embodiment of the present invention provides an acoustic wave resonator, including: a substrate; the concave part is formed in the substrate or the epitaxial layer on the substrate, and the concave part has an opening outline on the surface of the substrate or the surface of the epitaxial layer; the lower electrode is in contact with the plane where the opening outline is located; a piezoelectric layer formed on the lower electrode; an upper electrode formed on the piezoelectric layer; wherein the lower electrode profile of the lower electrode has at least three intersection points with the opening profile, the lower electrode profile has a first partial profile between a pair of adjacent intersection points, the opening profile has a second partial profile between the pair of adjacent intersection points, any point on the first partial profile is connected with a centroid of an overlapping area of the lower electrode profile and the opening profile to form a first straight line, the first straight line passes through the first partial profile and the second partial profile, and the distance from the intersection point of the first straight line and the first partial profile to the centroid is greater than the distance from the intersection point of the first straight line and the second partial profile to the centroid.
Optionally, the lower electrode contour has a third partial contour between another pair of adjacent intersection points, the opening contour has a fourth partial contour between the another pair of adjacent intersection points, any point on the third partial contour is connected with a centroid of an overlapping region of the lower electrode contour and the opening contour to form a second straight line, the second straight line passes through the third partial contour and the fourth partial contour, and a distance from an intersection point of the second straight line and the third partial contour to the centroid is smaller than a distance from an intersection point of the second straight line and the fourth partial contour to the centroid.
Optionally, the third partial profile has a release hole on the outside and the fourth partial profile has a release hole on the inside.
Optionally, there is at least one different intersection point between the pair of adjacent intersection points and the other pair of adjacent intersection points.
Optionally, the lower electrode profile and the opening profile are polygonal, circular or elliptical.
Optionally, the polygon is a triangle, a quadrilateral, a hexagon or an octagon.
Optionally, the geometric centers of the lower electrode profile and the opening profile coincide.
Optionally, the lower electrode profile is rotated by a predetermined angular offset relative to the opening profile.
Optionally, the lower electrode comprises at least two first conductive layers, wherein the acoustic impedance of the first conductive layer distal to the piezoelectric layer is greater than the acoustic impedance of the first conductive layer proximal to the piezoelectric layer.
Optionally, the upper electrode comprises at least two second conductive layers, wherein the acoustic impedance of the second conductive layer distal to the piezoelectric layer is greater than the acoustic impedance of the second conductive layer proximal to the piezoelectric layer.
Optionally, the lower electrode is made of two different materials, wherein a first portion of the lower electrode located within the opening contour is made of a first material; a second part of the lower electrode, which is positioned outside the outline of the opening, is made of a second material; the first material and the second material have different acoustic impedances; or the second material has a different temperature coefficient than the piezoelectric layer.
According to a second aspect, an embodiment of the present invention provides a method of manufacturing an acoustic wave resonator, including: forming a concave part in a substrate or in an epitaxial layer on the substrate, wherein the concave part has an opening outline on the surface of the substrate or the surface of the epitaxial layer; forming a sacrificial layer in the concave part and flattening the sacrificial layer; forming a lower electrode on the sacrificial layer, wherein the lower electrode is in contact with a plane where the opening outline is located; forming a piezoelectric layer on the lower electrode; forming an upper electrode on the piezoelectric layer; wherein the lower electrode profile of the lower electrode has at least three intersection points with the opening profile, the lower electrode profile has a first partial profile between a pair of adjacent intersection points, the opening profile has a second partial profile between the pair of adjacent intersection points, any point on the first partial profile is connected with a centroid of an overlapping area of the lower electrode profile and the opening profile to form a first straight line, the first straight line passes through the first partial profile and the second partial profile, and the distance from the intersection point of the first straight line and the first partial profile to the centroid is greater than the distance from the intersection point of the first straight line and the second partial profile to the centroid.
Optionally, the lower electrode contour has a third part contour between another pair of adjacent intersection points, the opening contour has a fourth part contour between the another pair of adjacent intersection points, any point on the third part contour is connected with a centroid of an overlapping region of the lower electrode contour and the opening contour to form a second straight line, the second straight line passes through the third part contour and the fourth part contour, and a distance from an intersection point of the second straight line and the third part contour to the centroid is smaller than a distance from an intersection point of the second straight line and the fourth part contour to the centroid.
Optionally, the method further comprises: and forming release holes on the piezoelectric layer and/or the upper electrode on the sacrificial layer outside the third partial outline and inside the fourth partial outline or above the sacrificial layer at the position so as to remove the sacrificial layer through the release holes.
Optionally, there is at least one different intersection point between the pair of adjacent intersection points and the other pair of adjacent intersection points.
According to a third aspect, an embodiment of the present invention provides a filter, including at least one acoustic wave resonator according to any one of the first aspect.
According to a fourth aspect, an embodiment of the present invention provides a method for manufacturing a filter, where the filter includes at least one acoustic wave resonator, and the at least one acoustic wave resonator adopts the method for manufacturing an acoustic wave resonator according to any one of the second aspects.
According to a fifth aspect, an embodiment of the present invention provides a communication device, including the filter according to the third aspect.
In the acoustic wave resonator of the embodiment of the invention, because the distance from the intersection point of the first straight line and the first partial contour in the lower electrode contour to the centroid is greater than the distance from the intersection point of the first straight line and the second partial contour in the opening contour to the centroid, partial area of the lower electrode is in contact with the plane where the opening contour is located, so that the acoustic wave resonator can be stably erected on the concave part.
Further, in the acoustic wave resonator according to the embodiment of the invention, since the distance from the intersection point of the second straight line and the third part of the lower electrode outline to the centroid is smaller than the distance from the intersection point of the second straight line and the fourth part of the opening outline to the centroid, a partial region of the recess can be exposed from the lower electrode, and thus, the release holes can be arranged on the outer side of the third part of the outline and the inner side of the fourth part of the outline, and no release channel needs to be additionally added, so that the possibility that the cavity filling material is not completely released can be reduced, the process difficulty is reduced, and the economic cost is saved. More importantly, the transverse and longitudinal leakage of the energy of the resonator or the filter can be reduced, the quality factor of a product is improved, and the electromechanical coupling coefficient Kt value is improved.
Drawings
The features and advantages of the present invention will be more clearly understood by reference to the accompanying drawings, which are illustrative and not to be construed as limiting the invention in any way, and in which:
fig. 1 to 3 are schematic structural views illustrating a conventional acoustic wave resonator;
fig. 4 to 6 are schematic structural views showing a first embodiment of an acoustic wave resonator of an example of the present invention;
fig. 7 is a schematic view showing a modification of the lower electrode profile and the opening profile of the acoustic wave resonator of the embodiment of the present invention;
fig. 8 is a schematic view showing another modification of the lower electrode profile and the opening profile of the acoustic wave resonator of the embodiment of the present invention;
fig. 9A to 9H are schematic structural diagrams at respective steps in the manufacturing method of the acoustic wave resonator of the embodiment of the present invention;
fig. 10 is a schematic structural view showing a second embodiment of an acoustic wave resonator of an example of the present invention;
fig. 11 shows a schematic structural diagram of a third embodiment of the acoustic wave resonator of the example of the present invention.
Detailed Description
Exemplary disclosures of the present disclosure will be described hereinafter with reference to the accompanying drawings. In the interest of clarity and conciseness, not all features of an implementation of the present disclosure are described in the specification. It will be appreciated, however, that in the development of any such actual implementation of the disclosure, numerous implementation-specific decisions may be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which may vary from one implementation to another.
Here, it should be further noted that, in order to avoid obscuring the present disclosure by unnecessary details, only device structures closely related to the scheme according to the present disclosure are shown in the drawings, and other details not so related to the present disclosure are omitted.
It is to be understood that the disclosure is not limited to the described embodiments, as described below with reference to the drawings. Herein, features between different implementations may be replaced or borrowed where feasible, and one or more features may be omitted in one implementation.
First embodiment
Fig. 4 to 6 show a first embodiment of the acoustic wave resonator of the example of the present invention, in which fig. 4 is a plan view of the structure of the acoustic wave resonator of the present embodiment, and fig. 5 is a sectional view taken along the section B-B in fig. 4.
The acoustic wave resonator may include a substrate 201, and the substrate 201 may be formed of a material compatible with the semiconductor process, such as silicon (Si), gallium arsenide (GaAs), indium phosphide (InP), glass, sapphire, alumina, SiC, or the like. A recess 202 formed in the substrate 201, the recess 202 being formed by etching, for example, it will be understood by those skilled in the art that the recess 202 may alternatively be formed in an epitaxial layer on the substrate 201, and the recess 202 may have an opening profile 212 on the surface of the substrate 201 or on the surface of the epitaxial layer. The acoustic wave resonator comprises a sandwich structure formed by a lower electrode 203, a piezoelectric layer 204 and an upper electrode 205, wherein the lower electrode 203 of the acoustic wave resonator is in contact with a plane where an opening outline 212 is located, namely the lower electrode 203 is in contact with the upper surface of the substrate 201 or is in contact with the upper surface of an epitaxial layer on the substrate 201, in the example of fig. 5, the plane is the upper surface of the substrate 201, and the lower electrode of the acoustic wave resonator and the recess 202 form a cavity.
More specifically, as shown in fig. 6, the lower electrode profile 213 and the opening profile 212 are shown in fig. 6, in the present embodiment, the lower electrode profile 213 and the opening profile 212 have 8 intersection points, respectively marked as J1 to J8 in chronological order, the lower electrode profile 213 has a first partial profile L1 between a pair of adjacent intersection points (taking adjacent intersection points J8 and J1 as an example), the opening profile 212 has a second partial profile L2 between the same adjacent intersection points J8 and J1, any point on the first partial profile L1 is connected to the centroid O of the overlapping region of the lower electrode profile 213 and the opening profile 212 to form a first straight line Z1, the first straight line Z1 passes through the first partial profile L1 and the second partial profile L2, and the distance from the intersection point of the first straight line Z1 and the first partial profile L1 to the centroid O is greater than the distance from the intersection point of the first straight line Z1 and the second partial profile L2 to the centroid O. Similarly, the profile of the lower electrode profile 213 between the adjacent intersection points J2 and J3, the adjacent intersection points J4 and J5, and the adjacent intersection points J6 and J7 may also be a first partial profile L1, and correspondingly the profile of the opening profile 212 between the adjacent intersection points J2 and J3, the adjacent intersection points J4 and J5, and the adjacent intersection points J6 and J7 may also be a second partial profile L2, and likewise, the distance from the intersection point of the first straight line Z1 with the first partial profile L1 to the centroid O is greater than the distance from the intersection point of the first straight line Z1 with the second partial profile L2 to the centroid O.
Since the distance from the intersection of the first straight line Z1 and the first partial profile L1 in the lower electrode profile 213 to the centroid O is greater than the distance from the intersection of the first straight line Z1 and the second partial profile L2 in the opening profile 212 to the centroid O, the lower electrode 203 has a partial region that is in contact with a plane where the opening profile 212 is located, for example, can be in contact with the upper surface of the substrate 201 or the upper surface of an epitaxial layer on the substrate 201. The more the intersection points of the lower electrode contour 213 and the opening contour 212 are, the more stably the acoustic wave resonator can be erected on the recess 202. In order for the acoustic wave resonator to be able to mount on the recess 202, at least three intersections of the lower electrode contour 213 and the opening contour 212 are required.
Further, the lower electrode profile 213 has a third partial profile L3 between another pair of adjacent intersection points (taking the adjacent intersection points J1 and J2 as an example), the aperture profile 212 has a fourth partial profile L4 between the same adjacent intersection points J1 and J2, any point on the third partial profile L3 is connected to the centroid O of the overlapping region of the lower electrode profile 213 and the aperture profile 212 to form a second straight line Z2, the second straight line Z2 passes through the third partial profile L3 and the fourth partial profile L4, and the distance from the intersection point of the second straight line Z2 and the third partial profile L3 to the centroid O is smaller than the distance from the intersection point of the second straight line Z2 and the fourth partial profile L4 to the centroid O. Similarly, the profile of the lower electrode profile 213 between the adjacent intersection points J3 and J4, the adjacent intersection points J5 and J6, and the adjacent intersection points J7 and J8 may also be a third partial profile L3, and correspondingly the profile of the opening profile 212 between the adjacent intersection points J3 and J4, the adjacent intersection points J5 and J6, and the adjacent intersection points J7 and J8 may also be a fourth partial profile L4, and likewise, the distance from the intersection point of the second straight line Z2 with the third partial profile L3 to the centroid O is smaller than the distance from the intersection point of the second straight line Z2 with the fourth partial profile L4 to the centroid O.
Since the distance from the intersection point of the second straight line Z2 and the third partial profile L3 in the lower electrode profile 213 to the centroid O is less than the distance from the intersection point of the second straight line Z2 and the fourth partial profile L4 in the opening profile 212 to the centroid O, a partial region of the recess 202 can be exposed from the lower electrode 203, and thus the release hole 206 can be arranged outside the third partial profile L3 and inside the fourth partial profile L4, no additional release channel is required, so that the possibility that the cavity filling material is not released cleanly can be reduced, the process difficulty is reduced, and the economic cost is saved. More importantly, the transverse and longitudinal leakage of the energy of the resonator or the filter can be reduced, the quality factor of a product is improved, and the electromechanical coupling coefficient Kt value is improved.
Further, the acoustic wave resonator according to the embodiment of the present invention forms the piezoelectric layer 204 on the lower electrode 203, and the piezoelectric layer 204 may also extend to cover the lower electrode 203, the cavity 202, and the substrate 201. An upper electrode 205 is formed on the piezoelectric layer 204. The lower electrode 203 and the upper electrode 205 may be a single layer or a multi-layer, and the upper/lower electrodes may be formed of one or more conductive materials, for example, various metals compatible with a semiconductor process including tungsten (W), molybdenum (Mo), iridium (Ir), aluminum (Al), platinum (Pt), ruthenium (Ru), niobium (Nb), or hafnium (Hf). The material of the upper electrode and the lower electrode may be the same or different. The piezoelectric layer 204 may be formed of any piezoelectric material compatible with semiconductor processing, such as aluminum nitride (AlN), doped aluminum nitride (AlN), or zirconate titanate (PZT). The overlapped part of the upper electrode, the piezoelectric layer and the lower electrode above the acoustic wave reflection area forms a sandwich structure of the acoustic wave resonator.
Further, a mass loading layer may be formed on the upper electrode 205, and a protective layer may be formed on the mass loading layer to protect the acoustic wave resonator. It should be understood by those skilled in the art that a bonding layer and a cover plate (cap wafer) may also be formed on the acoustic wave resonator, and the bonding layer and the cover plate are bonded and thinned to form a device package, where the bonding layer material may be, for example, Au, or other suitable bonding materials, and will not be described herein again.
In the example of fig. 6, the lower electrode profile 213 is a trapezoid, and the opening profile 212 is a circle, but those skilled in the art will appreciate that other regular or irregular polygons are also possible, such as a triangle, a quadrangle, a hexagon or an octagon, or a circle or an ellipse. As shown in fig. 7, the lower electrode profile 213 and the opening profile 212 have 3 intersections. Based on the principle that three points determine one plane, if the number of intersection points is less than 3, the acoustic wave resonator cannot be stably erected on the concave portion.
Further, in the acoustic wave resonator according to the embodiment of the present invention, as shown in fig. 8, the lower electrode profile 213 and the opening profile 212 may also be elliptical.
As shown in fig. 9A to 9H, the method of manufacturing an acoustic wave resonator according to an embodiment of the present invention may include the steps of:
s101. forming a recess 202 in a substrate 201, the recess 202 having an opening profile 212 at the surface of the substrate.
Those skilled in the art will appreciate that the recess 202 may also be formed in an epitaxial layer on the substrate such that the recess has an opening profile on the surface of the epitaxial layer on the substrate. The recess 202 may be formed by coating photoresist, exposing, and etching. The opening profile may be in various regular or irregular patterns.
S102. form a sacrificial layer 207 in the recess 202, and planarize the sacrificial layer 207.
The sacrificial layer can be selected from thin film materials such as phosphorosilicate glass, silicon dioxide, amorphous silicon and the like which can be compatible with the deposition temperature of a subsequent thin film, do not pollute a process system and have good etching selectivity and chemical polishing property. The sacrificial layer outside the cavity is then removed by a planarization process such as CMP, so that the sacrificial layer fills the recess 202, as shown in fig. 9A and 9B, where fig. 9B is a top view of fig. 9A.
S103, forming a lower electrode 203 on the sacrificial layer 207, wherein the lower electrode 203 is in contact with the plane where the opening outline is located. As shown in fig. 9C-9D.
S104, forming a piezoelectric layer 204 on the lower electrode 203; an upper electrode 205 is formed on the piezoelectric layer 204. As shown in fig. 9E.
Likewise, the lower electrode contour 213 has at least three intersection points with the aperture contour 212, the distance from the centroid O of the intersection point of the first straight line Z1 with the first partial contour L1 in the lower electrode contour 213 being greater than the distance from the centroid O of the intersection point of the first straight line Z1 with the second partial contour L2 in the aperture contour 212; and the distance from the intersection of the second straight line Z2 and the third partial contour L3 in the lower electrode contour 213 to the centroid O is smaller than the distance from the intersection of the second straight line Z2 and the fourth partial contour L4 in the opening contour 212 to the centroid O. It should be understood that the material of the lower electrode layer is not limited to the electrode material as described above, and an electrode material having high acoustic impedance and high acoustic speed may be sufficient. The lower electrode layer 203 may be formed by coating photoresist, exposing, and etching, and the shape of the projection of the lower electrode 203 on the upper surface of the substrate 201 may be an irregular pattern, or a regular polygon such as a triangle, a rectangle, a hexagon, and an octagon, or an ellipsoid.
Further, the piezoelectric layer 204 is deposited on the lower electrode 203, and the material of the piezoelectric layer is selected to meet the bandwidth requirement of the wireless mobile communication transceiver, and as mentioned above, a material compatible with the semiconductor process, such as aluminum nitride (AlN) or zirconate titanate (PZT), is preferably considered. An upper electrode 205 is deposited on the piezoelectric layer 204.
In addition, the method for manufacturing the acoustic wave resonator according to the embodiment of the present invention may further include the steps of:
and S105, coating photoresist on the upper electrode 205, exposing, developing and etching the upper electrode layer 205 to further realize the preparation of the upper electrode, as shown in FIG. 9F. It is understood that the lower electrode layer may not be etched in step S103, and the piezoelectric layer and the lower electrode layer may be etched at the same time when the upper electrode is etched. The outline shape of the upper electrode on the projection plane may be the same as the outline shape of the lower electrode on the projection plane.
S106. release holes 206 are formed on the piezoelectric layer and/or the upper electrode on the sacrificial layer 207 outside the third partial profile and inside the fourth partial profile or above the sacrificial layer at that location to remove the sacrificial layer 207 through the release holes 268, as shown in fig. 9G.
It is to be understood that when the piezoelectric layer and the lower electrode layer are etched while the upper electrode layer is etched, the release hole 206 may be formed by etching at a position of the sacrificial layer 207 which is not covered by the lower electrode 203.
S107, removing the sacrificial layer 207 through the release holes 206 to form the cavity 202. Specifically, the sacrificial layer 207 may be removed by oxidation or selective etching, depending on the material of the sacrificial layer.
And S108, coating photoresist on the substrate with the sacrificial layer removed, exposing and developing, and depositing a bonding material such as Au. Then, the photoresist and the Au on the photoresist in other areas are stripped off by a stripping process to form a bonding layer 208, and then the bonding layer 208 is bonded with a cover plate 209(cap wafer), as shown in fig. 9H.
And S109, thinning and grinding (grinding) the bonded device to form a package.
Second embodiment
Fig. 10 shows an acoustic wave resonator according to another embodiment of the present invention, and the same components in this embodiment as those in the first embodiment can refer to the related description above, and will not be described again here.
The present embodiment differs from the first embodiment in that, as shown in fig. 10, the lower electrode of the present embodiment includes two first conductive layers 203a and 203b, in which the acoustic impedance of the first conductive layer 203a remote from the piezoelectric layer 204 is larger than that of the first conductive layer 203b near the piezoelectric layer 204. Further, the upper electrode includes two second conductive layers 205a and 205b, wherein the acoustic impedance of the second conductive layer 205b remote from the piezoelectric layer 204 is greater than the acoustic impedance of the second conductive layer 205a proximate to the piezoelectric layer 204.
Although only two first conductive layers and two second conductive layers are shown in the example of fig. 10, it will be understood by those skilled in the art that the upper and lower electrodes described above may be constructed of more conductive layers, where the acoustic impedance of the first conductive layer remote from the piezoelectric layer is greater than the acoustic impedance of the first conductive layer near the piezoelectric layer, and the acoustic impedance of the second conductive layer remote from the piezoelectric layer is greater than the acoustic impedance of the second conductive layer near the piezoelectric layer. That is, for several first conductive layers, the acoustic impedance of the first conductive layers increases gradually as the distance from the piezoelectric layer 204 increases; and for several second conductive layers, the acoustic impedance of the second conductive layers increases gradually as the distance from the piezoelectric layer 204 increases.
In the present embodiment, by employing a plurality of conductive layers for at least one of the upper electrode and the lower electrode, and increasing the acoustic impedance of each conductive layer with increasing distance from the piezoelectric layer, Fractional Frequency Separation (FFS) of the resonator can be increased, and thus the parallel resistance (R) of the resonator can be increased p ) And a quality (Q) factor to improve the performance of the resonator.
Third embodiment
Fig. 11 shows an acoustic wave resonator according to another embodiment of the present invention, and the same components in this embodiment as those in the first embodiment can refer to the related description above, and are not described again here.
The present embodiment is different from the first embodiment in that, as shown in fig. 11, the lower electrode of the present embodiment is made of two different materials, a first portion 203c of the lower electrode located inside the opening outline 212 is made of a first material, and a second portion 203d (indicated by a hatched portion in the drawing) of the lower electrode located outside the opening outline 212 is made of a second material. Further, the second material has a positive temperature coefficient, i.e. the second portion 203d of the lower electrode is made of the second material having a positive temperature coefficient. This is because the piezoelectric layer 204 of the resonator is typically formed of a piezoelectric material such as aluminum nitride (AlN), doped aluminum nitride (AlN), or zirconate titanate (PZT), which typically exhibits a negative temperature coefficient. In the present embodiment, the second portion 203d of the lower electrode outside the opening profile 212 is made of the second material having a positive temperature coefficient, so that the frequency response offset caused by the piezoelectric material having a negative temperature coefficient can be at least partially offset, and thus the frequency response of temperature compensation can be obtained and the quality (Q) factor of the resonator can be improved, so as to improve the performance of the resonator.
Fourth embodiment
This embodiment provides a filter that may include at least one acoustic wave resonator as described in any of the first to third embodiments above.
This embodiment also provides a method of manufacturing a filter in which at least one acoustic wave resonator is manufactured by the method of manufacturing an acoustic wave resonator described in any of the first to third embodiments.
The details of the filter and the manufacturing method thereof can be understood by referring to the corresponding related descriptions and effects in the first to third embodiments, and are not described herein again.
Fifth embodiment
This embodiment provides a communication device, which may be, for example, a portable communication device such as a cellular phone, a Personal Digital Assistant (PDA), an electronic game device, etc., which may include the filter described in the fourth embodiment above.
While the disclosure has been described with reference to specific embodiments, it will be apparent to those skilled in the art that these descriptions are intended in an illustrative rather than in a limiting sense. Various modifications and alterations of this disclosure will become apparent to those skilled in the art from the spirit and principles of this disclosure, and such modifications and alterations are also within the scope of this disclosure.
Claims (18)
1. An acoustic wave resonator, comprising:
a substrate;
the concave part is formed in the substrate or the epitaxial layer on the substrate, and the concave part has an opening profile on the surface of the substrate or the surface of the epitaxial layer;
the lower electrode is in contact with the plane where the opening outline is located;
a piezoelectric layer formed on the lower electrode;
an upper electrode formed on the piezoelectric layer; wherein
The lower electrode profile of the lower electrode has at least three intersection points with the opening profile, the lower electrode profile has a first partial profile between a pair of adjacent intersection points, the opening profile has a second partial profile between the pair of adjacent intersection points, any point on the first partial profile is connected with a centroid of an overlapping region of the lower electrode profile and the opening profile to form a first straight line, the first straight line penetrates through the first partial profile and the second partial profile, and the distance from the intersection point of the first straight line and the first partial profile to the centroid is larger than the distance from the intersection point of the first straight line and the second partial profile to the centroid.
2. The acoustic resonator according to claim 1, wherein the lower electrode contour has a third partial contour between another pair of adjacent intersection points, the opening contour has a fourth partial contour between the another pair of adjacent intersection points, any point on the third partial contour is connected to a centroid of an overlapping region of the lower electrode contour and the opening contour to form a second straight line, the second straight line passes through the third partial contour and the fourth partial contour, and a distance from an intersection point of the second straight line and the third partial contour to the centroid is smaller than a distance from an intersection point of the second straight line and the fourth partial contour to the centroid.
3. The acoustic resonator according to claim 2, wherein the third partial profile has a release hole on the outside and the fourth partial profile has a release hole on the inside.
4. The acoustic resonator according to claim 1, wherein there is at least one different intersection point between the one pair of adjacent intersection points and the other pair of adjacent intersection points.
5. The acoustic resonator according to claim 1, wherein the lower electrode profile and the opening profile are polygonal, circular or elliptical.
6. The acoustic resonator according to claim 5, wherein the polygon is a triangle, a quadrangle, a hexagon, or an octagon.
7. The acoustic resonator of claim 1, wherein the geometric centers of the lower electrode profile and the aperture profile coincide.
8. The acoustic resonator according to claim 7, wherein the lower electrode profile is rotated by a predetermined angular offset with respect to the aperture profile.
9. The acoustic resonator according to claim 1, wherein the lower electrode comprises at least two first conductive layers, wherein the acoustic impedance of the first conductive layer distal from the piezoelectric layer is greater than the acoustic impedance of the first conductive layer proximal to the piezoelectric layer.
10. The acoustic resonator according to claim 1, wherein the upper electrode comprises at least two second conductive layers, wherein the acoustic impedance of the second conductive layer distal from the piezoelectric layer is greater than the acoustic impedance of the second conductive layer proximal to the piezoelectric layer.
11. The acoustic resonator according to any one of claims 1-10, wherein the lower electrode is made of two different materials, wherein
A first portion of the lower electrode within the opening contour is made of a first material;
a second part of the lower electrode, which is positioned outside the outline of the opening, is made of a second material;
the first material and the second material have different acoustic impedances; or
The second material has a different temperature coefficient than the piezoelectric layer.
12. A method of manufacturing an acoustic wave resonator, comprising:
forming a concave part in a substrate or an epitaxial layer on the substrate, wherein the concave part has an opening profile on the surface of the substrate or the surface of the epitaxial layer;
forming a sacrificial layer in the concave part and flattening the sacrificial layer;
forming a lower electrode on the sacrificial layer, wherein the lower electrode is in contact with a plane where the opening outline is located;
forming a piezoelectric layer on the lower electrode;
forming an upper electrode on the piezoelectric layer; wherein
The lower electrode profile of the lower electrode has at least three intersection points with the opening profile, the lower electrode profile has a first partial profile between a pair of adjacent intersection points, the opening profile has a second partial profile between the pair of adjacent intersection points, any point on the first partial profile is connected with a centroid of an overlapping area of the lower electrode profile and the opening profile to form a first straight line, the first straight line penetrates through the first partial profile and the second partial profile, and the distance from the intersection point of the first straight line and the first partial profile to the centroid is larger than the distance from the intersection point of the first straight line and the second partial profile to the centroid.
13. The manufacturing method according to claim 12, wherein the lower electrode contour has a third partial contour between another pair of adjacent intersection points, the opening contour has a fourth partial contour between the another pair of adjacent intersection points, any point on the third partial contour is connected to a centroid of an overlapping region of the lower electrode contour and the opening contour to form a second straight line, the second straight line passes through the third partial contour and the fourth partial contour, and a distance from an intersection point of the second straight line and the third partial contour to the centroid is smaller than a distance from an intersection point of the second straight line and the fourth partial contour to the centroid.
14. The method of manufacturing of claim 13, further comprising:
and forming release holes on the piezoelectric layer and/or the upper electrode on the sacrificial layer outside the third partial outline and inside the fourth partial outline or above the sacrificial layer at the position so as to remove the sacrificial layer through the release holes.
15. The manufacturing method according to claim 12, wherein there is at least one different intersection point between the one pair of adjacent intersection points and the other pair of adjacent intersection points.
16. A filter comprising at least one acoustic wave resonator according to any one of claims 1 to 11.
17. A method of manufacturing a filter comprising at least one acoustic wave resonator, wherein the at least one acoustic wave resonator is manufactured by the method of manufacturing an acoustic wave resonator according to any one of claims 12 to 15.
18. A communication device comprising the filter of claim 16.
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