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CN114800253A - Grinding device and method for silicon carbide wafer - Google Patents

Grinding device and method for silicon carbide wafer Download PDF

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Publication number
CN114800253A
CN114800253A CN202210627321.9A CN202210627321A CN114800253A CN 114800253 A CN114800253 A CN 114800253A CN 202210627321 A CN202210627321 A CN 202210627321A CN 114800253 A CN114800253 A CN 114800253A
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China
Prior art keywords
grinding
fluid
magnetorheological
silicon carbide
magnetic
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CN202210627321.9A
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CN114800253B (en
Inventor
张玺
皮孝东
张序清
朱如忠
杨德仁
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ZJU Hangzhou Global Scientific and Technological Innovation Center
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ZJU Hangzhou Global Scientific and Technological Innovation Center
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Priority to CN202210627321.9A priority Critical patent/CN114800253B/en
Publication of CN114800253A publication Critical patent/CN114800253A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B24B1/005—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using a magnetic polishing agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention relates to the technical field of silicon wafer processing, in particular to a grinding device and a method for a silicon carbide wafer, wherein the grinding device for the silicon carbide wafer comprises: the grinding mechanism comprises a grinding driving mechanism and a grinding base, and the grinding driving mechanism provides power for the rotary grinding of the silicon carbide wafer; the grinding fluid supply source comprises grinding fluid, magnetorheological fluid and a magnetic field, and the magnetorheological fluid is enabled to form magnetic clusters through the magnetic field, so that the motion track of grinding particles in the grinding fluid is controlled; the abrasive particle recovery mechanism comprises a magnetic control device, and the abrasive particles are separated from the magnetorheological fluid through the magnetic control device and then recovered. The invention ensures that the grinding particles in the grinding fluid are uniformly distributed, the surface of the silicon carbide wafer is uniformly ground, and after the grinding is finished, the surface of the magnetic control equipment can be controlled to generate magnetism, so that the grinding particles are intensively collected, and the magnetorheological fluid is recycled.

Description

Grinding device and method for silicon carbide wafer
Technical Field
The invention particularly relates to the technical field of silicon wafer processing, and particularly relates to a grinding device and method for a silicon carbide wafer.
Background
As a third-generation semiconductor material, the single-crystal silicon carbide material has the characteristics of large forbidden band width, high thermal conductivity, large electronic saturation drift rate, high critical breakdown electric field, low relative dielectric constant, good chemical stability and the like, and is suitable for manufacturing electronic devices with high temperature, high frequency, high power and high integration degree. How to realize high-efficiency, high-precision and low-cost processing becomes an important difficult problem to be solved urgently in developing silicon carbide materials at present. Silicon carbide wafers require removal of about 100 microns of thickness before chemical mechanical polishing of the silicon carbide wafer. The existing grinding scheme can be divided into free abrasive grinding and fixed abrasive grinding according to the processing principle; the main defects are as follows: the processing principle of the free abrasive is three-body abrasion, namely, in the rotating process of the grinding large disc and the pressure main shaft, grinding liquid is added intermittently, the motion tracks of the abrasive in the grinding process are distributed randomly, and the uniformity of material surface removal is poor. The processing principle of the fixed abrasive grinding is two-body abrasion, and the exposed abrasive grain edges and corners of the surface slide and plough the surface of the silicon carbide to remove materials, but the surface is scratched frequently.
The fixed abrasive grinding pad can realize semi-random controllability of the motion trail of the abrasive in the grinding process, has better material removal uniformity, but causes more serious surface scratch, and obtains larger atomically smooth surface pressure after the subsequent CMP finishing; the grinding and removing of the free grinding materials are simple and convenient to operate, the cost is low, the engineering application is wide, the movement tracks of the grinding materials are randomly distributed in the grinding process, and the uniformity of material removal in processing is limited; in order to realize uniform material removal and low surface damage, a method for regulating and controlling the motion track of free abrasive by using magnetorheological fluid is provided, but because the hardness of diamond is equivalent to that of silicon carbide in the mechanical removal process, the abrasive cutting edge is abraded to different degrees in the processing process, the abrasive cannot be recycled, and the abraded abrasive and the magnetorheological fluid need to be separated in time.
Disclosure of Invention
The invention provides a grinding device and a grinding method of a silicon carbide wafer aiming at the defects in the prior art.
In order to solve the technical problems, the invention is solved by the following technical scheme:
an apparatus for grinding a silicon carbide wafer, comprising:
the grinding mechanism comprises a grinding driving mechanism and a grinding base, the silicon carbide wafer is fixed on the grinding driving mechanism, and the grinding driving mechanism provides power for the rotary grinding of the silicon carbide wafer;
the grinding fluid supply source comprises grinding fluid, magnetorheological fluid and a magnetic field electric control unit, the magnetic field electric control unit generates a magnetic field, the grinding fluid and the magnetorheological fluid are mixed together, and the magnetorheological fluid forms magnetic clusters through the magnetic field, so that the motion trail of grinding particles in the grinding fluid is controlled;
the abrasive particle recovery mechanism is used for recovering the mixed solution of the grinding fluid and the magnetorheological fluid, comprises a magnetic control device, separates the grinding particles from the magnetorheological fluid through the magnetic control device, and intensively recovers the grinding particles in the grinding fluid to recycle the magnetorheological particles of the magnetorheological fluid.
Optionally, the grinding driving mechanism includes a rotary pressure spindle and a wafer fixing device, the rotary pressure spindle is connected to the wafer fixing device, the wafer fixing device is connected to the silicon carbide wafer, and the rotary pressure spindle drives the silicon carbide wafer to rotate under a predetermined pressure.
Optionally, the grinding base is one of a resin copper disc and a metal tin disc.
Optionally, a polishing pad is attached to the surface of the polishing base.
Optionally, the magnetic control device is specifically an electrically controlled magnetic rod, and the magnetic property of the surface of the electrically controlled magnetic rod is controlled, so that the magnetorheological particles of the magnetorheological fluid are adsorbed or have no adsorption effect.
Optionally, the abrasive particle recovery mechanism further comprises a grinding liquid discharge pipe, a liquid transmission container, a grinding liquid receiving container, a magnetorheological particle receiving and transferring pump and a magnetorheological liquid pipe, the liquid transmission container is connected with the grinding liquid receiving container and the magnetorheological particle receiving and transferring pump through two guide pipes, and the magnetorheological liquid pipe is connected with an output end of the magnetorheological particle receiving and transferring pump.
Optionally, the two guide pipes are respectively provided with a first electromagnetic valve and a second electromagnetic valve, the first electromagnetic valve controls the conduction condition of the grinding fluid receiving container, and the second electromagnetic valve controls the transportation condition of the magnetorheological particles receiving transfer pump.
A polishing method using the above polishing apparatus for a silicon carbide wafer, comprising:
providing grinding fluid, magnetorheological fluid and a magnetic field, covering the grinding base with the grinding fluid, and then enabling the magnetorheological fluid to form magnetic clusters through the magnetic field, so as to control the motion track of grinding particles in the grinding fluid, and driving a silicon carbide wafer to rotate and grind on the surface of the grinding base by using a grinding driving mechanism;
after grinding is finished, the grinding fluid flows into the abrasive particle recovery mechanism, the surface of the magnetic control equipment generates magnetic force, and grinding particles and magnetorheological fluid flow through the surface of the magnetic control equipment to be intensively recovered.
Optionally, the method for recovering the ground particles includes: after the grinding fluid and the magnetorheological fluid pass through the surface of the magnetic control equipment, the magnetorheological fluid is adsorbed on the surface of the magnetic control equipment, the first electromagnetic valve is opened, the second electromagnetic valve is closed, and grinding particles in the grinding fluid enter the grinding fluid bearing container to be collected.
Optionally, after the grinding particles are collected, the magnetic control device and the grinding fluid receiving container are washed by clean water, then the second electromagnetic valve is opened, the first electromagnetic valve is closed, the magnetic force on the surface of the magnetic control device disappears, the magnetic control device is washed by clean water again, the magnetorheological fluid is sent to the input port of the magnetorheological particle receiving transfer pump, and the magnetorheological fluid is conveyed by the magnetorheological particle receiving transfer pump, so that the cycle use of the magnetorheological fluid is realized.
Due to the adoption of the technical scheme, the invention has the remarkable technical effects that:
the grinding fluid supply source comprises grinding fluid, magnetorheological fluid and a magnetic field, the magnetorheological fluid forms magnetic clusters through the magnetic field, so that the motion track of grinding particles in the grinding fluid is controlled, the grinding particles in the grinding fluid are uniformly distributed, the surface of a silicon carbide wafer is uniformly ground, and after grinding is finished, the grinding particles are intensively collected through the surface controllable magnetism generation of magnetic control equipment, and the magnetorheological fluid is recycled.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic view of an apparatus for polishing a SiC wafer according to an embodiment of the present invention;
FIG. 2 is a schematic structural view of an abrasive grain recovery mechanism in an apparatus for polishing a SiC wafer according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a magnetic cluster formed by magnetorheological fluid in the silicon carbide wafer grinding device according to the embodiment of the invention.
10. A magnetic field electronic control unit; 20. a grinding groove; 30. a resin grinding disc; 40. magnetorheological fluid and grinding fluid; 50. a polishing liquid supply unit; 60. rotating the pressure spindle; 70. a magnetorheological fluid recovery conduit; 80. a wafer fixing device; 90. a silicon carbide wafer; 100. a liquid container drain switch; 120. A magnetic field; 130. a polishing liquid receiving container; 140. the magnetorheological particles are connected with a transfer pump; 150. a magnetorheological fluid pipe; 160. a liquid transfer container; 170. grinding the drain pipe; 180. an electrically controlled magnetic bar.
Detailed Description
The present invention will be described in further detail with reference to examples, which are illustrative of the present invention and are not to be construed as being limited thereto.
An apparatus for grinding a silicon carbide wafer, comprising:
the grinding mechanism comprises a grinding driving mechanism and a grinding base, the silicon carbide wafer is fixed on the grinding driving mechanism, and the grinding driving mechanism provides power for the rotary grinding of the silicon carbide wafer;
the grinding fluid supply source comprises grinding fluid, magnetorheological fluid and a magnetic field electric control unit, the magnetic field electric control unit generates a magnetic field, the grinding fluid and the magnetorheological fluid are mixed together, and the magnetorheological fluid forms magnetic clusters through the magnetic field, so that the motion trail of grinding particles in the grinding fluid is controlled;
the abrasive particle recovery mechanism is used for recovering the mixed solution of the grinding fluid and the magnetorheological fluid, comprises a magnetic control device, separates the grinding particles from the magnetorheological fluid through the magnetic control device, and intensively recovers the grinding particles in the grinding fluid to recycle the magnetorheological particles of the magnetorheological fluid.
As shown in fig. 1, the grinding apparatus for silicon carbide wafer comprises a grinding tank 20, a resin grinding disc 30, a magnetorheological fluid and a grinding fluid 40, a grinding fluid supply unit 50, a rotary pressure spindle 60, a wafer fixing device 80, a silicon carbide wafer 90, a magnetic field electronic control unit 10, a magnetorheological fluid recovery conduit 70, a liquid container discharge switch 100, and an abrasive particle recovery mechanism, wherein the grinding tank 20 stores the magnetorheological fluid and the grinding fluid 40, the grinding fluid supply unit 50 is used for injecting the grinding fluid into the grinding tank 20, the rotary pressure spindle 60, the wafer fixing device 80, and the silicon carbide wafer 90 are connected in sequence to perform rotary grinding on the lower surface of the silicon carbide wafer 90, during grinding, the magnetic field electronic control unit 10 generates a magnetic field 120 to form magnetic clusters with the magnetorheological fluid in the grinding fluid 40 and control the motion trajectory of grinding particles in the grinding fluid, the liquid container discharge switch 100 is used for controlling the discharge of the magnetorheological fluid and the grinding fluid 40 after grinding, and the magnetorheological fluid recovery conduit 70 is used for transmitting the magnetorheological fluid.
As shown in fig. 2, the abrasive particle recovery mechanism includes a diamond grinding fluid receiving container 130, a magnetorheological particle receiving and transferring pump 140, a magnetorheological fluid tube 150, a liquid transmission container 160, a grinding fluid discharge tube 170, and an electrically controlled magnetic rod 180, when the body container discharge switch 100 is opened, the magnetorheological fluid and the grinding fluid 40 flow into the electrically controlled magnetic rod 180 through the grinding fluid discharge tube 170, and then the magnetorheological fluid and the grinding fluid 40 are separated and recovered through the liquid transmission container 160, the diamond grinding fluid receiving container 130 collects the grinding fluid, and the magnetorheological particle receiving and transferring pump 140 separates the magnetorheological fluid through the magnetorheological fluid tube 150 and the magnetorheological fluid recovery conduit 70, and finally enters the grinding tank 20 for reuse.
In this embodiment, the abrasive particles in the polishing liquid are diamond particles.
In other embodiments, the abrasive particles are particles such as aluminum dioxide that do not attract magnetic substances.
The grinding driving mechanism comprises a rotary pressure spindle 60 and a wafer fixing device, the rotary pressure spindle 60 is connected with the wafer fixing device, the wafer fixing device is connected with the silicon carbide wafer 90, and the rotary pressure spindle 60 drives the silicon carbide wafer 90 to rotate under the condition of preset pressure.
In this embodiment, the predetermined pressure at which the rotating pressure spindle 60 drives the silicon carbide wafer 90 is 10kgf load.
The grinding base is one of a resin copper disc and a metal tin disc.
In this embodiment, the grinding base is specifically a resin grinding disc 30, the silicon carbide wafer 90 is ground on the resin grinding disc 30 in a rotating manner, and the damage of the grinding of the surface of the silicon carbide wafer 90 is reduced by the flexibility of the surface of the resin grinding disc 30.
The grinding fluid supply source further comprises a magnetic field electric control unit 10, and the magnetic field electric control unit 10 generates a magnetic field to control the movement condition of the magnetorheological fluid.
In this embodiment, when the silicon carbide wafer 90 approaches the resin grinding disc 30, the magnetic field electronic control unit 10 is turned on to generate the magnetic field 120, and the magnetorheological fluid is ground to form magnetic clusters, because the magnetorheological fluid and the grinding fluid 40 are mixed together, the motion trajectory of grinding particles in the grinding fluid can be effectively controlled, so that the lower surface of the silicon carbide wafer 90 is uniformly ground, and under the coordination control of the magnetorheological particles and the rotating pressure spindle 60, the cutting depth of the grinding particles on the surface of the silicon carbide wafer is smaller, and the ground surface damage can be reduced.
The magnetic control equipment is specifically an electric control magnetic rod 180, and the magnetic property of the surface of the electric control magnetic rod 180 is controlled, so that the magnetic rheological fluid is adsorbed or has no adsorption effect, when the electric control magnetic rod 180 is electrified, the surface of the electric control magnetic rod 180 generates magnetic force, the surface of the electric control magnetic rod 180 adsorbs the magnetic rheological fluid, and when the electric control magnetic rod 180 is powered off, the surface of the electric control magnetic rod 180 has no magnetic force, and the magnetic rheological fluid can be separated from the surface of the electric control magnetic rod 180.
The abrasive particle recovery mechanism further comprises a grinding liquid discharge pipe 170, a liquid transmission container 160, a grinding liquid receiving container 130, a magnetorheological particle receiving and transferring pump 140 and a magnetorheological fluid pipe 150, wherein the liquid transmission container 160 is respectively connected with the grinding liquid receiving container 130 and the magnetorheological particle receiving and transferring pump 140 through two guide pipes, and the magnetorheological fluid pipe is connected with the output end of the magnetorheological particle receiving and transferring pump 140 and is used for transporting magnetorheological fluid.
The two guide pipes are respectively provided with a first electromagnetic valve and a second electromagnetic valve, the first electromagnetic valve controls the conduction condition of the grinding fluid receiving container 130, and the second electromagnetic valve controls the transportation condition of the magnetorheological particles receiving and transporting pump 140.
In this embodiment, when the first electromagnetic valve needs to be opened, the second electromagnetic valve is closed; when the first electromagnetic valve is closed, the second electromagnetic valve is opened, and the first electromagnetic valve and the second electromagnetic valve work in turn.
The invention also provides a grinding method of the silicon carbide wafer, which comprises the following steps: the grinding fluid supply source comprises grinding fluid, magnetorheological fluid and a magnetic field, wherein the grinding fluid, the magnetorheological fluid and the magnetic field 120 are mixed together, the grinding fluid covers the grinding base, then the magnetorheological fluid forms magnetic clusters through the magnetic field 120, so that the motion track of grinding particles in the grinding fluid is controlled, a grinding driving mechanism is used for driving the silicon carbide wafer 90 to rotate and grind the surface of the grinding base, after grinding is finished, the surface of a magnetic control device is made to generate magnetic force, and the grinding fluid and the magnetorheological fluid flow through the surface of the magnetic control device to intensively recycle the grinding particles.
As shown in fig. 3, in this embodiment, the magnetic field 120 causes the magnetorheological fluid to form magnetic clusters, so as to control the movement track of the abrasive particles in the abrasive fluid, so that the abrasive particles are uniformly distributed on the grinding base, and the silicon carbide wafer 90 is uniformly contacted with the abrasive particles, so that the silicon carbide wafer 90 is uniformly contacted with the abrasive particles when rotating, and the surface of the silicon carbide wafer 90 is ground more smoothly.
The method for recovering abrasive particles comprises: after the grinding fluid and the magnetorheological fluid pass through the surface of the magnetic control equipment, the magnetorheological fluid is adsorbed on the surface of the magnetic control equipment, the first electromagnetic valve is opened, the second electromagnetic valve is closed, and the grinding fluid enters the grinding fluid receiving container to be collected.
After the grinding particles are collected, the magnetic control equipment and the grinding fluid receiving container are washed by clean water, then the second electromagnetic valve is opened, the first electromagnetic valve is closed, the magnetic force on the surface of the magnetic control equipment disappears, the magnetic control equipment is washed by the clean water again, the magnetorheological fluid is sent to an input port of the magnetorheological particle receiving and transferring pump, and the magnetorheological fluid is conveyed by the magnetorheological particle receiving and transferring pump, so that the cycle use of the magnetorheological fluid is realized.
The working principle of the grinding device for the silicon carbide wafer is as follows: after the resin grinding disc 30 is covered with the magnetorheological fluid and the grinding fluid 40, the silicon carbide wafer 90 is driven to rotate and grind through the rotating pressure spindle 60, the grinding particles in the grinding fluid are controlled to be uniformly distributed through the magnetic field 120, after grinding, the grinding particles in the grinding fluid are crushed and collected in the grinding fluid receiving container 130, the magnetorheological fluid passes through the magnetorheological particle receiving transfer pump 140 and then is injected into the grinding groove 20 again, and then the grinding particles in the grinding fluid are intensively recovered and recycled for recycling.
In addition, it should be noted that the specific embodiments described in the present specification may differ in the shape of the components, the names of the components, and the like. All equivalent or simple changes of the structure, the characteristics and the principle of the invention which are described in the patent conception of the invention are included in the protection scope of the patent of the invention. Various modifications, additions and substitutions for the specific embodiments described may be made by those skilled in the art without departing from the scope of the invention as defined in the accompanying claims.

Claims (10)

1. An apparatus for polishing a silicon carbide wafer, comprising:
the grinding mechanism comprises a grinding driving mechanism and a grinding base, the silicon carbide wafer is fixed on the grinding driving mechanism, and the grinding driving mechanism provides power for the rotary grinding of the silicon carbide wafer;
the grinding fluid supply source comprises grinding fluid, magnetorheological fluid and a magnetic field electric control unit, the magnetic field electric control unit generates a magnetic field, the grinding fluid and the magnetorheological fluid are mixed together, and the magnetorheological fluid forms magnetic clusters through the magnetic field, so that the motion trail of grinding particles in the grinding fluid is controlled;
the abrasive particle recovery mechanism is used for recovering the mixed solution of the grinding fluid and the magnetorheological fluid, comprises a magnetic control device, separates the grinding particles from the magnetorheological fluid through the magnetic control device, and intensively recovers the grinding particles in the grinding fluid to recycle the magnetorheological particles of the magnetorheological fluid.
2. The apparatus as claimed in claim 1, wherein the grinding driving mechanism comprises a rotary pressure spindle and a wafer holder, the rotary pressure spindle is connected to the wafer holder, the wafer holder is connected to the silicon carbide wafer, and the rotary pressure spindle rotates the silicon carbide wafer under a predetermined pressure.
3. The apparatus of claim 1, wherein the polishing base is one of a resin copper disk and a metal tin disk.
4. The apparatus for polishing a silicon carbide wafer according to claim 3, wherein a polishing pad is attached to a surface of the polishing base.
5. The silicon carbide wafer grinding device as claimed in claim 1, wherein the magnetic force control device is an electrically controlled magnetic rod, and the magnetic force control device controls the magnetism of the surface of the electrically controlled magnetic rod, so as to adsorb or not adsorb the magnetorheological particles of the magnetorheological fluid.
6. The apparatus for grinding a silicon carbide wafer according to claim 5, wherein the abrasive particle recovery mechanism further comprises a grinding liquid discharge pipe, a liquid transport container, a grinding liquid receiving container, a magnetorheological particle receiving and transferring pump and a magnetorheological liquid pipe, the liquid transport container is connected with the grinding liquid receiving container and the magnetorheological particle receiving and transferring pump through two conduits, and the magnetorheological liquid pipe is connected with an output end of the magnetorheological particle receiving and transferring pump.
7. The apparatus for grinding silicon carbide wafers as claimed in claim 6, wherein a first solenoid valve and a second solenoid valve are respectively installed on the two conduits, the first solenoid valve controls the connection of the grinding fluid receiving container, and the second solenoid valve controls the transportation of the magnetorheological particles receiving and transporting pump.
8. The method of polishing with the apparatus for polishing a silicon carbide wafer according to any one of claims 1 to 7, comprising:
providing grinding fluid, magnetorheological fluid and a magnetic field, covering the grinding base with the grinding fluid, and then enabling the magnetorheological fluid to form magnetic clusters through the magnetic field, so as to control the motion track of grinding particles in the grinding fluid, and driving a silicon carbide wafer to rotate and grind on the surface of the grinding base by using a grinding driving mechanism;
after grinding is finished, the grinding fluid flows into the abrasive particle recovery mechanism, the surface of the magnetic control equipment generates magnetic force, and grinding particles and magnetorheological fluid flow through the surface of the magnetic control equipment to be intensively recovered.
9. The grinding method according to claim 8, wherein the method of recovering the ground particles comprises: after the grinding fluid and the magnetorheological fluid pass through the surface of the magnetic control equipment, the magnetorheological fluid is adsorbed on the surface of the magnetic control equipment, the first electromagnetic valve is opened, the second electromagnetic valve is closed, and grinding particles in the grinding fluid enter the grinding fluid bearing container to be collected.
10. The grinding method according to claim 9, wherein after the collection of the grinding particles is completed, the magnetic force control device and the grinding fluid receiving container are washed with clean water, then the second electromagnetic valve is opened, the first electromagnetic valve is closed, the magnetic force on the surface of the magnetic force control device disappears, the magnetic force is washed again with clean water, the magnetorheological fluid is sent to the input port of the magnetorheological particle receiving transfer pump, and the magnetorheological fluid is conveyed by the magnetorheological particle receiving transfer pump, so that the cycle use of the magnetorheological fluid is realized.
CN202210627321.9A 2022-06-06 2022-06-06 Grinding device and method for silicon carbide wafer Active CN114800253B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115820210A (en) * 2022-11-15 2023-03-21 季华实验室 Magnetic composite abrasive grain, polishing liquid, and polishing apparatus

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001252862A (en) * 2000-03-08 2001-09-18 Nec Kyushu Ltd Method and device for polishing
US6332829B1 (en) * 2000-05-04 2001-12-25 Mpm Ltd. Polishing method and device
CN1805823A (en) * 2003-04-28 2006-07-19 微米技术有限公司 Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces
US20060252349A1 (en) * 2005-05-04 2006-11-09 Yoo Jae H Semiconductor wafer polishing apparatus having magneto-rhelogical elastic pad
CN105904332A (en) * 2016-04-13 2016-08-31 宋佳 Magneto-rheological amorphous alloy polishing device, polishing agent and polishing method
CN108527042A (en) * 2018-04-03 2018-09-14 韩赛 The clamping microscope carrier and lathe of wafer processing
CN110281085A (en) * 2019-07-25 2019-09-27 广东工业大学 A kind of magnetorheological grinding and polishing device of cluster and its application method
CN110640622A (en) * 2018-06-27 2020-01-03 株式会社Pdt Object polishing apparatus and object polishing method
CN110883609A (en) * 2019-12-06 2020-03-17 福建工程学院 Magnetorheological polishing device convenient to operate
CN114029851A (en) * 2021-11-24 2022-02-11 济源石晶光电频率技术有限公司 High fundamental frequency wafer grinding process

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001252862A (en) * 2000-03-08 2001-09-18 Nec Kyushu Ltd Method and device for polishing
US6332829B1 (en) * 2000-05-04 2001-12-25 Mpm Ltd. Polishing method and device
CN1805823A (en) * 2003-04-28 2006-07-19 微米技术有限公司 Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces
US20060252349A1 (en) * 2005-05-04 2006-11-09 Yoo Jae H Semiconductor wafer polishing apparatus having magneto-rhelogical elastic pad
CN105904332A (en) * 2016-04-13 2016-08-31 宋佳 Magneto-rheological amorphous alloy polishing device, polishing agent and polishing method
CN108527042A (en) * 2018-04-03 2018-09-14 韩赛 The clamping microscope carrier and lathe of wafer processing
CN110640622A (en) * 2018-06-27 2020-01-03 株式会社Pdt Object polishing apparatus and object polishing method
CN110281085A (en) * 2019-07-25 2019-09-27 广东工业大学 A kind of magnetorheological grinding and polishing device of cluster and its application method
CN110883609A (en) * 2019-12-06 2020-03-17 福建工程学院 Magnetorheological polishing device convenient to operate
CN114029851A (en) * 2021-11-24 2022-02-11 济源石晶光电频率技术有限公司 High fundamental frequency wafer grinding process

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
刘俊龙等: "SrTiO_3陶瓷基片集群磁流变研磨加工表面特性研究", 《中国机械工程》 *
张玺等: "碳化硅单晶衬底加工技术现状及发展趋势", 《中央民族大学学报(自然科学版)》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115820210A (en) * 2022-11-15 2023-03-21 季华实验室 Magnetic composite abrasive grain, polishing liquid, and polishing apparatus

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