CN114783911A - Transfer device of LED chip, chip assembly process and display screen - Google Patents
Transfer device of LED chip, chip assembly process and display screen Download PDFInfo
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- 229910000679 solder Inorganic materials 0.000 claims description 68
- 239000006249 magnetic particle Substances 0.000 claims description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- 229910017052 cobalt Inorganic materials 0.000 claims description 9
- 239000010941 cobalt Substances 0.000 claims description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
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- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 claims 2
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- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
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- DMTIXTXDJGWVCO-UHFFFAOYSA-N iron(2+) nickel(2+) oxygen(2-) Chemical compound [O--].[O--].[Fe++].[Ni++] DMTIXTXDJGWVCO-UHFFFAOYSA-N 0.000 description 1
- IGHXQFUXKMLEAW-UHFFFAOYSA-N iron(2+) oxygen(2-) Chemical compound [O-2].[Fe+2].[Fe+2].[O-2] IGHXQFUXKMLEAW-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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Abstract
Description
技术领域technical field
本申请属于显示技术领域,尤其涉及一种LED芯片的转移装置、芯片的装配工艺和显示屏。The present application belongs to the field of display technology, and in particular relates to a transfer device for an LED chip, a chip assembly process and a display screen.
背景技术Background technique
随着技术的发展,人们对MicroLED(微米发光二极管)的使用越来越广泛。在其装配的过程中,需要将LED芯片转移到电路基板上。在转移和安装的过程中,需要在LED芯片的P极和N极上设置锡膏,将锡膏融化后将LED芯片安装至电路基板上。由于P极和N极的距离非常近,容易使得融化后的锡膏连接在一起,导致P极和N极短路。使得产品的良率得不到保障,不利于MicroLED的使用。With the development of technology, people use MicroLED (micron light-emitting diode) more and more widely. During its assembly, the LED chips need to be transferred to the circuit substrate. In the process of transfer and installation, solder paste needs to be placed on the P and N poles of the LED chip, and the LED chip is mounted on the circuit substrate after the solder paste is melted. Since the distance between the P and N poles is very close, it is easy to connect the melted solder paste together, resulting in a short circuit between the P and N poles. As a result, the product yield cannot be guaranteed, which is not conducive to the use of MicroLED.
发明内容SUMMARY OF THE INVENTION
本申请实施例提供一种LED芯片的转移装置、芯片的装配工艺和显示屏,以解决现有的P极和N极上的锡膏容易连接的问题。Embodiments of the present application provide a transfer device for an LED chip, an assembly process for the chip, and a display screen, so as to solve the problem that the existing solder pastes on the P pole and the N pole are easy to connect.
第一方面,本申请实施例提供一种LED芯片的转移装置,包括:In a first aspect, an embodiment of the present application provides a device for transferring an LED chip, including:
转移头,所述转移头具有安装侧,转移头被配置为将芯片固定于安装侧,并移动芯片;a transfer head, the transfer head having a mounting side, the transfer head being configured to fix the chip on the mounting side and move the chip;
第一磁性件,所述第一磁性件设置于所述转移头上,并可对安装侧的磁性物料施加磁性吸附力,和/或,被安装侧的磁性物料施加磁性吸附力;a first magnetic piece, the first magnetic piece is disposed on the transfer head, and can apply a magnetic adsorption force to the magnetic material on the installation side, and/or apply a magnetic adsorption force to the magnetic material on the installed side;
第二磁性件,所述第二磁性件与第一磁性件间隔设置于所述转移头上,所述第二磁性件可对安装侧的磁性物料施加磁性吸附力,和/或,被安装侧的磁性物料施加磁性吸附。A second magnetic member, the second magnetic member is disposed on the transfer head spaced from the first magnetic member, the second magnetic member can exert a magnetic adsorption force on the magnetic material on the installation side, and/or the installed side The magnetic material exerts magnetic adsorption.
可选地,所述第一磁性件的一端与转移头连接,另一端向下延伸并凸出于转接头的底部;和/或,Optionally, one end of the first magnetic member is connected to the transfer head, and the other end extends downward and protrudes from the bottom of the transfer head; and/or,
所述第二磁性件的一端与转移头连接,另一端向下延伸并凸出于转接头的底部。One end of the second magnetic piece is connected with the transfer head, and the other end extends downward and protrudes from the bottom of the transfer head.
可选地,所述第一磁性件凸出部分的磁性,与第二磁性件凸出部分的磁性相同。Optionally, the magnetic properties of the protruding portion of the first magnetic member are the same as the magnetic properties of the protruding portion of the second magnetic member.
可选地,LED芯片的P电极和N电极上设置有锡膏,所述锡膏内含有磁性微粒;Optionally, solder paste is provided on the P electrode and N electrode of the LED chip, and the solder paste contains magnetic particles;
安装侧具有芯片安装位,芯片安装位被配置为安装LED芯片,所述第一磁性件临近P电极设置,所述第二磁性件临近N电极设置。The mounting side has a chip mounting position, the chip mounting position is configured to mount an LED chip, the first magnetic member is disposed adjacent to the P electrode, and the second magnetic member is disposed adjacent to the N electrode.
可选地,所述第一磁性件呈片状设置,所述第一磁性件的片面朝向P电极;所述第二磁性件呈片状设置,所述第二磁性件的片面朝向N电极。Optionally, the first magnetic member is arranged in a sheet shape, and the side of the first magnetic member faces the P electrode; the second magnetic member is arranged in a sheet shape, and the side of the second magnetic member faces the N electrode.
可选地,所述第一磁性件包括电磁铁、永磁铁,以及磁石中任意一种或者多种;所述第二磁性件包括电磁铁、永磁铁,以及磁石中任意一种或者多种;Optionally, the first magnetic member includes any one or more of an electromagnet, a permanent magnet, and a magnet; the second magnetic member includes any one or more of an electromagnet, a permanent magnet, and a magnet;
所述磁性微粒由三氧化二铁、四氧化二铁钴、四氧化二铁镍、四氧化二铁锰、四氧化三铁、金属铁、钴,以及镍中的任意一种或者多种制成。The magnetic particles are made of any one or more of ferrous oxide, ferrous cobalt tetroxide, ferrous nickel tetroxide, ferrous manganese tetroxide, ferric oxide, metallic iron, cobalt, and nickel. .
可选地,所述磁性微粒由三氧化二铁、四氧化二铁钴、四氧化二铁镍、四氧化二铁锰,以及四氧化三铁中的任意一种或者多种制成;Optionally, the magnetic particles are made of any one or more of ferrous oxide, cobalt ferrous tetroxide, nickel ferrous tetroxide, manganese ferrous tetroxide, and ferric tetroxide;
所述第一磁性件和第二磁性件包括电磁铁、永磁铁、磁石,以及金属铁、钴、镍中的任意一种或者多种。The first magnetic member and the second magnetic member include electromagnets, permanent magnets, magnets, and any one or more of metal iron, cobalt, and nickel.
第二方面,本申请实施例还提供一种芯片的装配工艺,所述芯片的装配工艺使用如上述任一项所述的LED芯片的转移装置;In a second aspect, an embodiment of the present application further provides a chip assembly process, where the chip assembly process uses the LED chip transfer device described in any one of the above;
芯片的装配工艺包括:The chip assembly process includes:
转移头抓取LED芯片,使得芯片的P电极临近转移装置的第一磁性件设置,芯片的N电极临近转移装置的第二磁性件设置;The transfer head grabs the LED chip, so that the P electrode of the chip is disposed adjacent to the first magnetic member of the transfer device, and the N electrode of the chip is disposed adjacent to the second magnetic member of the transfer device;
在P电极和N电极上设置锡膏,或者在电路基板上对应P电极和N电极的位置设置锡膏,所述锡膏内含有磁性微粒;solder paste is arranged on the P electrode and the N electrode, or solder paste is arranged on the circuit substrate at the position corresponding to the P electrode and the N electrode, and the solder paste contains magnetic particles;
将锡膏融化并将芯片贴附至电路基板上。The solder paste is melted and the chip is attached to the circuit board.
可选地,所述第一磁性件和/或第二磁性件为电磁片,所述将锡膏融化并将芯片贴附至电路基板上的步骤包括:Optionally, the first magnetic member and/or the second magnetic member are electromagnetic sheets, and the step of melting the solder paste and attaching the chip to the circuit substrate includes:
为第一磁性件和第二磁性件通电,以使第一磁性件对P电极上的锡膏具有磁性吸附力,第二磁性件对N电极上的锡膏具有磁性吸附力;energizing the first magnetic member and the second magnetic member, so that the first magnetic member has a magnetic adsorption force on the solder paste on the P electrode, and the second magnetic member has a magnetic adsorption force on the solder paste on the N electrode;
融化锡膏并将芯片焊接至电路基板上。Melt the solder paste and solder the chip to the circuit board.
第三方面,本申请实施例还提供一种显示屏,所述显示屏包括LED芯片,所述LED芯片的转移由上述实施例中的LED芯片的转移装置完成;和/或,In a third aspect, an embodiment of the present application further provides a display screen, the display screen includes an LED chip, and the transfer of the LED chip is completed by the LED chip transfer device in the above embodiment; and/or,
所述LED芯片的安装按照上述实施例中的芯片的装配工艺完成。The installation of the LED chip is completed according to the chip assembly process in the above embodiment.
本申请实施例提供的LED芯片的转移装置,在LED芯片的转移过程中,LED芯片的P电极和N电极上设置有锡膏,锡膏内含有磁性微粒,当锡膏在加热熔融时流动性增强,第一磁性件和P电极上的锡膏(磁性微粒)在磁性吸附力的作用下阻止P电极上的锡膏向N电极的方向移动(P电极上的磁性微粒与第一磁性件磁性吸附,增加了磁性微粒对抗方向流动的能力);第二磁性件和N电极上的锡膏(磁性微粒)在磁性吸附力的作用下阻止N电极上的锡膏向P电极的方向移动(N电极上的磁性微粒与第而磁性件磁性吸附,增加了磁性微粒对抗方向流动的能力);如此,避免P电极和N电极上熔融状态下的锡膏相向流动而连接,从而避免了短路现象的出现,有利于大幅的提高产品的良率。In the transfer device for the LED chip provided by the embodiment of the present application, during the transfer process of the LED chip, the P electrode and the N electrode of the LED chip are provided with solder paste, and the solder paste contains magnetic particles, and the solder paste is fluid when heated and melted. Enhancement, the solder paste (magnetic particles) on the first magnetic part and the P electrode prevents the solder paste on the P electrode from moving in the direction of the N electrode under the action of the magnetic adsorption force (the magnetic particles on the P electrode and the first magnetic part are magnetically magnetic. Adsorption increases the ability of the magnetic particles to resist directional flow); the solder paste (magnetic particles) on the second magnetic part and the N electrode prevents the solder paste on the N electrode from moving in the direction of the P electrode under the action of the magnetic adsorption force (N The magnetic particles on the electrodes are magnetically adsorbed to the second magnetic member, which increases the ability of the magnetic particles to resist directional flow); in this way, the solder paste in the molten state on the P electrode and the N electrode is prevented from flowing in opposite directions and connected, thereby avoiding the short circuit phenomenon. Appears, which is conducive to greatly improving the yield of products.
附图说明Description of drawings
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单的介绍。显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对本领域技术人员来说,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to illustrate the technical solutions in the embodiments of the present application more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained from these drawings without creative effort.
为了更完整地理解本申请及其有益效果,下面将结合附图来进行说明。其中,在下面的描述中相同的附图标号表示相同部分。For a more complete understanding of the present application and its beneficial effects, the following description will be made with reference to the accompanying drawings. Here, the same reference numerals denote the same parts in the following description.
图1为本申请实施例提供的芯片的装配工艺的流程示意图。FIG. 1 is a schematic flowchart of an assembling process of a chip according to an embodiment of the present application.
图2为本申请实施例提供的LED芯片的转移装置的一实施例的结构示意图。FIG. 2 is a schematic structural diagram of an embodiment of a device for transferring LED chips according to an embodiment of the present application.
图3为图2所示的LED芯片的转移装置另一视角的结构示意图。FIG. 3 is a schematic structural diagram of the LED chip transfer device shown in FIG. 2 from another perspective.
图4为图2所示的LED芯片的转移装置另一视角的结构示意图。FIG. 4 is a schematic structural diagram of the LED chip transfer device shown in FIG. 2 from another perspective.
具体实施方式Detailed ways
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present application.
本申请实施例提供一种LED芯片300的转移装置、芯片的装配工艺和显示屏,以解决现有的LED芯片300的转移装置在转移LED芯片300时P极和N极容易被导通的问题。LED以MicroLED(微米发光二极管)为例,可以广泛的使用与显示领域,特别是使用于显示屏上。以下将结合附图对进行说明。The embodiments of the present application provide a transfer device for the
本申请实施例提供的LED芯片300的转移装置可应用于芯片的装配工艺,示例性的,请参阅图1,图1为本申请实施例提供的芯片的装配工艺的流程示意图。芯片的装配工艺可以应用于手机显示屏、计算机显示屏、电视机显示屏等等显示屏的生产中。The transfer device for the
为了更清楚的说明LED芯片300的转移装置的结构,以下将结合附图对LED芯片300的转移装置进行介绍。In order to explain the structure of the transfer device of the
示例性的,请参阅图2至图4,图2为本申请实施例提供的LED芯片300的转移装置的一实施例的结构示意图。图3为图2所示的LED芯片300的转移装置另一视角的结构示意图。图4为图2所示的LED芯片300的转移装置另一视角的结构示意图。LED芯片300的转移装置包括:转移头100,所述转移头100具有安装侧110,转移头100被配置为将芯片固定于安装侧110,并移动芯片;第一磁性件210,所述第一磁性件210设置于所述转移头100上,并可对安装侧110的磁性物料施加磁性吸附力,和/或,被安装侧110的磁性物料施加磁性吸附力;第二磁性件220,所述第二磁性件220与第一磁性件210间隔设置于所述转移头100上,所述第二磁性件220可对安装侧110的磁性物料施加磁性吸附力,和/或,被安装侧110的磁性物料施加磁性吸附。For example, please refer to FIG. 2 to FIG. 4 . FIG. 2 is a schematic structural diagram of an embodiment of a transfer apparatus for an
具体地,本实施例中,转移头100的形式可以有很多,如通过负压吸附,夹具夹持等均可。转移头100可以为圆柱状、方柱状等多种形状均可,其一侧与转移驱动连接,使得转移头100可以移动至预设的工位,按照预设的轨迹运行。例如,可以为转动、上、下、左、右移动,左右摆动,以及前后摆动中的任意一种方式或者多种方式的组合。转移头100的安装侧110用于安装LED芯片300(以微米发光二极管为例),在一些实施例中,为了更好的定位LED芯片300,可以在安装侧110设置芯片安装位,使得LED芯片300在安装侧110的位置固定,如此也将使得LED芯片300P电极320和N电极330的位置固定。其中LED芯片300还包括供P电极320和N电极330安装的芯片本体310。如此,有利于磁性件更好的排布,例如,第一磁性件210临近P电极320设置,第二磁性件220临近N电极330设置,从而使得磁性件可以更好的对P电极320和N电极330上的锡膏500施加作用力。Specifically, in this embodiment, the
第一磁性件210与转移头100的连接方式有很多,如通过卡扣、卡槽卡持连接,通过螺钉等紧固件连接,或者通过胶粘连接等均可。同理,第二磁性件220与转移头100的连接方式有很多,如通过卡扣、卡槽卡持连接,通过螺钉等紧固件连接,或者通过胶粘连接等均可。There are many ways to connect the first
关于第一磁性件210和第二磁性件220的材质,可以施加或者被施加磁性吸附力的均可。具体可以的材质,可以根据具体的工况进行设置。在一些工况中,第一磁性件210和第二磁性件220的具体材质与锡膏500中所含磁性微粒的材料相关。下面举例进行说明。Regarding the materials of the first
当第一磁性件210和第二磁性件220为具有磁性吸附力(能产生磁场)的材料制成时,锡膏500中所含磁性微粒可以具有磁性吸附力,也可以只需要具有被磁性吸附的特性(不能产生磁场,但可以被磁性吸附)即可。例如,第一磁性件210包括电磁铁、永磁铁,以及磁石中任意一种或者多种;第二磁性件220包括电磁铁、永磁铁,以及磁石中任意一种或者多种。磁性微粒则可以由三氧化二铁、四氧化二铁钴、四氧化二铁镍、四氧化二铁锰、四氧化三铁、金属铁、钴,以及镍中的任意一种或者多种制成。其中,磁性微粒的形式可以有很多,如磁性材料粉末,也可以为纳米磁性材料等。When the first
当磁性微粒为具有磁性吸附力(能产生磁场)的材料制成时,第一磁性件210和第二磁性件220可以具有磁性吸附力,也可以只需要具有被磁性吸附的特性(不能产生磁场,但可以被磁性吸附)即可。例如,磁性微粒由三氧化二铁、四氧化二铁钴、四氧化二铁镍、四氧化二铁锰,以及四氧化三铁中的任意一种或者多种制成;第一磁性件210和第二磁性件220包括电磁铁、永磁铁、磁石,以及金属铁、钴、镍中的任意一种或者多种。When the magnetic particles are made of materials with magnetic adsorption (which can generate a magnetic field), the first
本实施例中,在LED芯片300的转移过程中,LED芯片300的P电极320和N电极330上设置有锡膏500,锡膏500内含有磁性微粒,当锡膏500在加热熔融时流动性增强,第一磁性件210和P电极320上的锡膏500(磁性微粒)在磁性吸附力的作用下阻止P电极320上的锡膏500向N电极330的方向移动(P电极320上的磁性微粒与第一磁性件210磁性吸附,增加了磁性微粒对抗方向流动的能力);第二磁性件220和N电极330上的锡膏500(磁性微粒)在磁性吸附力的作用下阻止N电极330上的锡膏500向P电极320的方向移动(N电极330上的磁性微粒与第而磁性件磁性吸附,增加了磁性微粒对抗方向流动的能力);如此,避免P电极320和N电极330上熔融状态下的锡膏500相向流动而连接,从而避免了短路现象的出现,有利于大幅的提高产品的良率。In this embodiment, during the transfer process of the
在一些实施例中,为了进一步的提高第一磁性件210和第二磁性件220对锡膏500的作用效果。所述第一磁性件210的一端与转移头100连接,另一端向下延伸并凸出于转移头100的底部;和/或,所述第二磁性件220的一端与转移头100连接,另一端向下延伸并凸出于转移头100的底部。本实施例中,第一磁性件210以呈长条形为例,第一磁性件210凸出转移头100底部的部分,其产生的磁场可以直接的作用于P电极320上的锡膏500,缩短了第一磁性件210与P电极320上的锡膏500的距离,有利于第一磁性件210更好的发挥吸附作用。同样的,第二磁性件220以呈长条形为例,第二磁性件220凸出转移头100底部的部分,其产生的磁场可以直接的作用于N电极330上的锡膏500,缩短了第二磁性件220与N电极330上的锡膏500的距离,有利于第二磁性件220更好的发挥吸附作用。In some embodiments, in order to further improve the effect of the first
在一些实施例中,为了进一步的提高磁吸附的效果,所述第一磁性件210凸出部分的磁性,与第二磁性件220凸出部分的磁性相同。本实施例中,第一磁性件210和第二磁性件220凸出部分的磁性以北极(N极)为例,如此,使得第一磁性件210和第二磁性件220凸出部分之间产生相互排斥的作用力,同时第一磁性件210的北极对P电极320上的锡膏500产生吸附力,第二磁性件220也是通过北极对N电极330上的锡膏500产生吸附力。In some embodiments, in order to further improve the effect of magnetic adsorption, the magnetic properties of the protruding portion of the first
在一些实施例中,为了进一步的提高磁吸附的效果,所述第一磁性件210呈片状设置,所述第一磁性件210的片面朝向P电极320;所述第二磁性件220呈片状设置,所述第二磁性件220的片面朝向N电极330。本实施例中,通过将第一磁性件210和第二磁性件220设置为片状,使得第一磁性件210的磁场覆盖P电极320上的锡膏500所在区域,第二磁性件220的磁场覆盖N电极330上的锡膏500所在区域。如此,有利于更加可靠的控制锡膏500的流动。In some embodiments, in order to further improve the effect of magnetic adsorption, the first
为了更好的说明解决P电极320和N电极330上设置锡膏500连接的问题,本申请公开一种芯片的装配工艺,所述芯片的装配工艺使用上面实施例中的LED芯片300的转移装置,芯片的装配工艺包括:In order to better explain and solve the problem of setting the
S100,转移头100抓取LED芯片300,使得芯片的P电极320临近转移装置的第一磁性件210设置,芯片的N电极330临近转移装置的第二磁性件220设置;S100, the
S200,在P电极320和N电极330上设置锡膏500,或者在电路基板上对应P电极320和N电极330的位置设置锡膏500,所述锡膏500内含有磁性微粒;S300,将锡膏500融化并将芯片贴附至电路基板上。S200, disposing
具体地,本实施例中,转移头100可以通过负压吸附的方式抓取LED芯片300,使得LED芯片300位于芯片安装位上。如此,使得芯片的P电极320临近转移装置的第一磁性件210设置,芯片的N电极330临近转移装置的第二磁性件220设置。在电极上设置锡膏500,或者LED芯片300将要安装的电路基板上设置锡膏500。值得说明的是,在一些实施例中,设置锡膏500的步骤可以在抓取LED芯片300之前执行。可以先融化锡膏500再将芯片贴附,也可以先将芯片放置到预设的位置,贴附和锡膏500的融化同时进行。Specifically, in this embodiment, the
当第一磁性件210和第二磁性件220为电磁铁时,为了更好的控制LED芯片300的贴附过程,所述第一磁性件210和/或第二磁性件220为电磁片,所述将锡膏500融化并将芯片贴附至电路基板上的步骤包括:为第一磁性件210和第二磁性件220通电,以使第一磁性件210对P电极320上的锡膏500具有磁性吸附力,第二磁性件220对N电极330上的锡膏500具有磁性吸附力;融化锡膏500并将芯片焊接至电路基板上。如此,在需要对锡膏500进行吸附时,通电第一磁性件210和第二磁性件220以使其产生磁性吸附力,在不需要对锡膏500进行磁性吸附时,断电第一磁性件210和第二磁性件220以避免使其影响其它的部件。When the first
本申请进一步提出一种显示屏,所述显示屏包括LED芯片300,所述LED芯片300的转移由上面实施例中的LED芯片300的转移装置完成。所述LED芯片300的安装按照上面实施例中所提出的芯片的装配工艺完成。The present application further provides a display screen, the display screen includes an
在上述实施例中,对各个实施例的描述都各有侧重,某个实施例中没有详述的部分,可以参见其他实施例的相关描述。In the above-mentioned embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.
在本申请的描述中,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个特征。以上对本申请实施例所提供的LED芯片300的转移装置进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的方法及其核心思想;同时,对于本领域的技术人员,依据本申请的思想,在具体实施方式及应用范围上均会有改变之处,综上,本说明书内容不应理解为对本申请的限制。In the description of this application, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implying the number of indicated technical features. Thus, features defined as "first", "second" may expressly or implicitly include one or more features. The transfer device for the
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