CN114698254A - Stacking structure and touch sensor - Google Patents
Stacking structure and touch sensor Download PDFInfo
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- CN114698254A CN114698254A CN202011637598.7A CN202011637598A CN114698254A CN 114698254 A CN114698254 A CN 114698254A CN 202011637598 A CN202011637598 A CN 202011637598A CN 114698254 A CN114698254 A CN 114698254A
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 97
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 61
- 239000002042 Silver nanowire Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000011253 protective coating Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 10
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 4
- 229920000728 polyester Polymers 0.000 claims description 4
- 229920000570 polyether Polymers 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 2
- 229920000178 Acrylic resin Polymers 0.000 claims 1
- 239000010410 layer Substances 0.000 description 100
- 238000005530 etching Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- 239000004713 Cyclic olefin copolymer Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910002065 alloy metal Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/118—Printed elements for providing electric connections to or between printed circuits specially for flexible printed circuits, e.g. using folded portions
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09218—Conductive traces
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
The invention discloses a stacked structure, comprising: a substrate; a layer of silver nanowires disposed on the substrate; and a metal layer disposed on the nano-silver wire layer, wherein the nano-silver wire layer comprises: a plurality of silver nanowires; and the protective coating covers the nano silver wires, wherein the thickness of the nano silver wire layer is between 40 and 120 nm. A touch sensor comprising the above-mentioned stacked structure is provided.
Description
Technical Field
The present invention relates to a stacked structure, and more particularly, to a stacked structure including a layer of silver nanowires. The present invention also relates to a touch sensor, and more particularly, to a touch sensor including the above stacked structure.
Background
The stacked structure including the silver nanowires and the metal layer can be applied to a touch sensor. Conventionally, a Trace Area (TA) including a metal wire made of silver is disposed around the stacked structure through silver paste screen printing and a laser process, and a Visible Area (VA) not including a metal wire is disposed in the center of the stacked structure, so that the stacked structure can be applied to a touch sensor.
Fig. 1 is a schematic diagram of a trace area in a touch sensor formed by silver paste screen printing and laser processing in a conventional stacked structure. As shown in fig. 1, the trace region 4 includes a substrate 1; a nano silver wire layer 2 disposed on the substrate 1; and a metal layer 3 disposed on the nano-silver layer 2, wherein the metal layer 3 forms a plurality of metal wires 5. Limited by the limit of the size of the laser spot in the laser process, the minimum line width 6/line distance 7 of the metal wires 5 included in the trace area 4 can only reach 30/30 μm, and cannot be applied to a small-sized touch sensor requiring a narrow frame.
Disclosure of Invention
In order to solve the problem that the line width and line distance of a wiring area are too wide after the traditional silver paste screen printing and laser processing in the stacked structure in the prior art, the invention provides a novel stacked structure and a touch sensor.
To achieve the above and other objects, the present invention provides a stacked structure, comprising:
a substrate;
a layer of silver nanowires disposed on the substrate; and
a metal layer disposed on the nano-silver layer,
wherein the layer of nanosilver comprises:
a plurality of silver nanowires; and
a protective coating covering the plurality of silver nanowires,
wherein the thickness of the nano-silver wire layer is between 40 and 120 nm.
In the above laminated structure, the protective coating layer is made of a material selected from the group consisting of acrylate resins, such as Epoxy acrylate resins, Urethane acrylate resins, Polyester acrylate resins and Polyether acrylate resins.
The above stacked structure may further include:
a second layer of nanosilver disposed below the substrate; and
a second metal layer disposed below the second silver nanowire layer,
wherein the second layer of nanosilver comprises:
a plurality of silver nanowires; and
a second protective coating covering the plurality of silver nanowires,
wherein the second nano-silver layer has a thickness of 40-120 nm.
In the stacked structure, the thickness of the metal layer is between 150nm and 300 nm.
In the above stacked structure, the thickness of the substrate is between 10 μm and 150 μm.
To achieve the above and other objects, the present invention also provides a touch sensor, comprising:
the stacked structure is described above.
In the touch sensor, the nano-silver layer and the metal layer in the stacked structure included in the touch sensor may be patterned.
In the touch sensor, the nano-silver layer, the second nano-silver layer, the metal layer and the second metal layer in the stacked structure included in the touch sensor may be patterned.
The stacked structure can be patterned by applying a yellow light etching process to form a routing area with narrower line width and line distance, so that the touch sensor applying the stacked structure can realize the design of a narrow frame.
Drawings
Fig. 1 is a schematic diagram of a trace area of a conventional stacked structure after silver paste screen printing and laser processing.
Fig. 2 is a schematic view of a stacked structure according to embodiment 1 of the present invention.
Fig. 3 is a schematic view of a stacked structure according to embodiment 2 of the present invention.
Fig. 4 is a schematic diagram of a touch sensor and a manufacturing process thereof according to embodiment 3 of the invention.
Fig. 5 is a schematic view illustrating a trace area of a touch sensor according to embodiment 3 of the present invention.
Description of reference numerals:
1 base material
2 layer of silver nanowires
3 Metal layer
4 routing area
5 Metal wire
6 line width
7 line spacing
10-fold structure
11 base material
12 nm silver wire layer
13 Metal layer
20-fold structure
22 second layer of silver nanowires
23 second metal layer
30 touch sensor
31 Photoresist
32 second photoresist
33 visual area
34 routing area
35 metal wire
36 line width
37 line pitch
Detailed Description
The following description of the embodiments of the present invention is provided by way of specific embodiments, and other advantages and effects of the present invention will be apparent to those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and its several details are capable of modification and various changes in form and details can be made without departing from the spirit and scope of the present invention.
As used in the specification and the appended claims, the singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise.
As used in the specification and the appended claims, the term "or" includes "and/or" is used in its sense unless the context clearly dictates otherwise.
The "line width" as used herein refers to the width of the metal conductive line.
The "pitch" as referred to herein refers to the shortest distance between an edge of a metal wire and an edge of another metal wire adjacent thereto.
Example 1
Fig. 2 is a schematic view of the stacked structure 10 according to embodiment 1 of the present invention. As shown in fig. 2, the stacked structure 10 of embodiment 1 includes: a substrate 11; a nano-silver wire layer 12 disposed on the substrate 11; and a metal layer 13 disposed on the nano-silver wire layer 12, wherein the nano-silver wire layer 12 includes: a plurality of silver nanowires; and a protective coating layer covering the plurality of nano-silver wires, wherein the thickness of the nano-silver wire layer 12 is between 40nm and 120 nm.
In the stacked structure of example 1, suitable materials for the substrate include, but are not limited to: transparent plastics such as polyethylene terephthalate (PET), Cyclic olefin Copolymer (COP), and transparent Polyimide (CPI). In addition, the thickness of the substrate can be between 10 to 150 μm.
In the stacked structure of embodiment 1, the material of the protective coating layer may be made of a material selected from the group consisting of acrylate-based resins, such as Epoxy acryl-based (Epoxy acrylates), Urethane acryl-based (Urethane acrylates), Polyester acryl-based (Polyester acrylates) and Polyether acryl-based (Polyether acrylates), but the present invention is not limited thereto.
In the stacked structure of example 1, the thickness of the layer of silver nanowires is between 40nm and 120 nm. When the thickness of the nano silver wire layer is less than 40nm, the over-thin protective coating in the nano silver wire layer is not enough to protect the nano silver wire from being damaged by the etching solution in the yellow light etching process, thereby affecting the conductivity of the nano silver wire, and being not beneficial to the application of the stacked structure in the touch sensor. In contrast, when the thickness of the nano-silver wire layer is greater than 120nm, the excessively thick protective coating in the nano-silver wire layer causes the contact resistance between the nano-silver wire layer and the metal layer above the nano-silver wire layer to be excessively large, which affects the conductivity of the nano-silver wire layer, and is not favorable for the application of the stacked structure in a touch sensor.
Accordingly, the stacked structure of the present invention can apply a photolithography etching process to pattern the metal layer and the silver nanowire layer by using the technical feature that the thickness of the silver nanowire layer is between 40nm and 120nm, thereby forming a routing area with a narrow line width and line distance, so that a touch sensor using the stacked structure can realize a narrow frame design, and simultaneously maintain an ideal contact impedance between the silver nanowire layer and the metal layer above the silver nanowire layer.
In the stacked structure of embodiment 1, suitable materials for the metal layer include, but are not limited to: copper, nickel, silver, and the like, and their associated alloy metal materials. In addition, the thickness of the metal layer can be between 150nm and 300 nm. When the thickness of the metal layer is less than 150nm, the too thin metal layer cannot obtain the proper conductivity, which is not favorable for the application of the stacked structure in the touch sensor. In contrast, when the thickness of the metal layer is greater than 300nm, the excessively thick metal layer may cause poor flexibility of the stacked structure, which is not favorable for the application of the stacked structure in a touch sensor.
In the photolithography etching process, the stacked structure of embodiment 1 can be matched with a corresponding etching solution with a high selectivity ratio or a one-time etching solution to complete the fabrication of the touch sensor.
Example 2
Fig. 3 is a schematic view of the stacked structure 20 according to embodiment 2 of the present invention. As shown in fig. 3, the stacked structure of example 2 includes, in the same manner as the stacked structure of example 1: a substrate 11; a nano-silver wire layer 12 disposed on the substrate 11; and a metal layer 13 disposed on the nano-silver wire layer 12, wherein the nano-silver wire layer 12 includes: a plurality of silver nanowires; and a protective coating layer covering the plurality of nano-silver wires, wherein the thickness of the nano-silver wire layer 12 is between 40nm and 120 nm.
Compared to embodiment 1, the stacked structure 20 of embodiment 2 further includes: a second layer of silver nanowires 22 disposed below the substrate 11; and a second metal layer 23 disposed under the second nano-silver wire layer 22, wherein the second nano-silver wire layer 22 includes: a plurality of silver nanowires; and a second protective coating layer covering the plurality of silver nanowires, wherein the thickness of the second silver nanowire layer 22 is between 40nm and 120 nm.
In the stacked structure 20 of embodiment 2, the material of the second protective coating included in the second silver nanowire layer 22, the thickness of the second silver nanowire layer 22, and the material and thickness of the second metal layer 23 are the same as those of the silver nanowire layer 12 and the metal layer 13 of embodiment 1, and are not described again.
The stacked structure of embodiment 2 can be applied to a touch sensor, in which the metal layer and the nano-silver wire layer can be patterned by photolithography and etching processes to form the driving electrode Tx; and patterning the second metal layer and the second nano-silver layer by photolithography process to form the sensing electrode Rx. The metal layer and the second metal layer are disposed to prevent interference caused by double-sided exposure in the photolithography process.
Example 3
Fig. 4 is a schematic diagram of a touch sensor 30 and a manufacturing process thereof according to embodiment 3 of the invention. As shown in fig. 4, the touch sensor 30 of embodiment 3 includes the stacked structure 10 as described in embodiment 1, and the stacked structure 10 is patterned to meet the requirements of the touch sensor.
As shown in fig. 4, the process of preparing the touch sensor 30 of embodiment 3 includes:
1. taking the stacked structure 10 of example 1;
2. coating a photoresist 31;
3. exposing and developing to pattern the photoresist 31;
4. etching the metal layer 13 by the high-selectivity etching solution;
5. etching with the high-selectivity etching solution to etch the nano-silver wire layer 12;
6. removing the photoresist 31;
7. coating a second photoresist 32;
8. second exposure and development to pattern the second photoresist 32;
9. etching the metal layer 13 for the second time by using a metal etching solution with a high selectivity ratio; and
10. the second photoresist 32 is removed to complete the touch sensor 30 of embodiment 3, wherein the touch sensor 30 includes a visible region 33 where the nano-silver wire layer 12 is not covered by the metal layer 13, and a trace region 34 having a plurality of metal wires formed by the metal layer 13.
In another embodiment, the metal layer 13 and the nano-silver wire layer 12 can be etched simultaneously by using a single etching solution, so as to complete the steps 4 and 5 of the above-mentioned manufacturing process.
Fig. 5 is a schematic view of the trace area 34 of the touch sensor 30 according to embodiment 3 of the invention. As shown in fig. 5, the trace area 34 includes a substrate 11; a nano-silver wire layer 12 disposed on the substrate 11; and a metal layer 13 disposed on the nano-silver layer 12, wherein the metal layer 13 is patterned to form a plurality of metal wires 35, and a line width 36/line distance 37 of the plurality of metal wires 35 included in the routing region 34 can reach 10/10 μm through a photolithography process, so that the touch sensor can be applied to a small-sized touch sensor requiring a narrow frame.
In summary, the stacked structure and the touch sensor of the present invention have at least the following excellent technical effects:
1. the stacked structure can form a routing area with narrower line width and line distance by applying a yellow light etching process by means of the specific thickness range of the nano silver line layer, so that the touch sensor applying the stacked structure can realize the design of a narrow frame, and the problem that the line width and the line distance in the routing area of the traditional touch sensor are too wide can be solved.
2. The laminated structure of the invention can effectively prevent the damage to the nano silver wire when the metal layer is arranged on the nano silver wire layer by the metal coating process by virtue of the specific thickness range of the nano silver wire layer.
3. The stacked structure of the invention can effectively prevent the damage to the nano silver wire when the metal layer is etched in the yellow light etching process by means of the specific thickness range of the nano silver wire layer.
4. The stacked structure of the present invention can prevent the interference during the double-sided exposure process by the arrangement of the metal layer.
The above-described embodiments are merely illustrative of the present invention and are not intended to limit the present invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Accordingly, the scope of the invention should be determined from the following claims.
Claims (8)
1. A laminated structure, comprising:
a substrate;
a layer of silver nanowires disposed on the substrate; and
a metal layer disposed on the nano-silver layer,
wherein the layer of nanosilver comprises:
a plurality of silver nanowires; and
a protective coating covering the plurality of silver nanowires,
wherein the thickness of the nano-silver wire layer is between 40 and 120 nm.
2. The laminated structure of claim 1, wherein the protective coating is comprised of a material selected from the group consisting of epoxy acrylic, urethane acrylic, polyester acrylic and polyether acrylic () resins.
3. The laminated structure according to claim 1 or 2, further comprising:
a second layer of nanosilver disposed below the substrate; and
a second metal layer disposed below the second silver nanowire layer,
wherein the second layer of nanosilver comprises:
a plurality of silver nanowires; and
a second protective coating covering the plurality of silver nanowires,
wherein the thickness of the second nano silver wire layer is 40-120 nm by weight.
4. The stacked structure of claim 1, wherein the metal layer has a thickness of 150-300 nm.
5. The stacked structure of claim 1, wherein the substrate has a thickness of 10 to 150 μm.
6. A touch sensor, comprising:
the laminated structure according to any one of claims 1 to 5.
7. The touch sensor of claim 6, comprising the stacked structure of any one of claims 1-2, and wherein the layer of nanosilver and the metal layer are patterned.
8. The touch sensor of claim 6, wherein the touch sensor comprises the stacked structure of claim 3, and wherein the layer of nanosilver, the second layer of nanosilver, the metal layer, and the second metal layer are patterned.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011637598.7A CN114698254A (en) | 2020-12-31 | 2020-12-31 | Stacking structure and touch sensor |
| JP2021081126A JP7213302B2 (en) | 2020-12-31 | 2021-05-12 | Laminated structure and touch sensor |
| KR1020210062641A KR102551528B1 (en) | 2020-12-31 | 2021-05-14 | Stack structure and touch sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011637598.7A CN114698254A (en) | 2020-12-31 | 2020-12-31 | Stacking structure and touch sensor |
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| Publication Number | Publication Date |
|---|---|
| CN114698254A true CN114698254A (en) | 2022-07-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011637598.7A Pending CN114698254A (en) | 2020-12-31 | 2020-12-31 | Stacking structure and touch sensor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7213302B2 (en) |
| KR (1) | KR102551528B1 (en) |
| CN (1) | CN114698254A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105446555A (en) * | 2014-06-12 | 2016-03-30 | 宸鸿科技(厦门)有限公司 | Nanometer silver line conductive stacked structure and touch control panel |
| CN109390080A (en) * | 2018-11-16 | 2019-02-26 | 顾氏纳米科技（浙江）有限公司 | A kind of silver nanowires and transparent conductive oxide composite transparent conductive film and its application |
| CN110333793A (en) * | 2019-05-09 | 2019-10-15 | 业成科技（成都）有限公司 | Flexible touch-control structure |
| WO2020102392A1 (en) * | 2018-11-13 | 2020-05-22 | Chasm Advanced Materials, Inc. | Transparent conductive circuit |
| CN214014660U (en) * | 2020-12-31 | 2021-08-20 | 天材创新材料科技(厦门)有限公司 | Stacking structure and touch sensor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI510991B (en) * | 2013-07-25 | 2015-12-01 | Henghao Technology Co Ltd | Touch panel, conductive film and method for manufacturing the same |
| SG11201602419WA (en) * | 2013-09-30 | 2016-04-28 | 3M Innovative Properties Co | Protective coating for printed conductive pattern on patterned nanowire transparent conductors |
| JP6070675B2 (en) * | 2014-10-27 | 2017-02-01 | 大日本印刷株式会社 | Method for producing transparent conductive substrate and touch panel sensor |
| KR102264037B1 (en) * | 2014-12-11 | 2021-06-11 | 삼성디스플레이 주식회사 | Electrode pattern, manufacturing method thereof and touch sensor including the same |
| JP2016197554A (en) * | 2015-04-03 | 2016-11-24 | パナソニックＩｐマネジメント株式会社 | Production method of transparent wiring member and transparent wiring member |
| WO2017176498A1 (en) * | 2016-04-05 | 2017-10-12 | 3M Innovative Properties Company | Nanowire contact pads with enhanced adhesion to metal interconnects |
| CN111610871A (en) * | 2019-02-25 | 2020-09-01 | 英属维尔京群岛商天材创新材料科技股份有限公司 | Electrode structure and touch panel thereof |
-
2020
- 2020-12-31 CN CN202011637598.7A patent/CN114698254A/en active Pending
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2021
- 2021-05-12 JP JP2021081126A patent/JP7213302B2/en active Active
- 2021-05-14 KR KR1020210062641A patent/KR102551528B1/en active IP Right Grant
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105446555A (en) * | 2014-06-12 | 2016-03-30 | 宸鸿科技(厦门)有限公司 | Nanometer silver line conductive stacked structure and touch control panel |
| WO2020102392A1 (en) * | 2018-11-13 | 2020-05-22 | Chasm Advanced Materials, Inc. | Transparent conductive circuit |
| CN109390080A (en) * | 2018-11-16 | 2019-02-26 | 顾氏纳米科技（浙江）有限公司 | A kind of silver nanowires and transparent conductive oxide composite transparent conductive film and its application |
| CN110333793A (en) * | 2019-05-09 | 2019-10-15 | 业成科技（成都）有限公司 | Flexible touch-control structure |
| CN214014660U (en) * | 2020-12-31 | 2021-08-20 | 天材创新材料科技(厦门)有限公司 | Stacking structure and touch sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102551528B1 (en) | 2023-07-05 |
| KR20220097123A (en) | 2022-07-07 |
| JP2022105254A (en) | 2022-07-13 |
| JP7213302B2 (en) | 2023-01-26 |
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