CN114672780A

CN114672780A - Wafer tray and wafer sputtering equipment

Info

Publication number: CN114672780A
Application number: CN202210287197.6A
Authority: CN
Inventors: 洪俊
Original assignee: Hefei Qizhong Technology Co ltd; Chipmore Technology Corp Ltd
Current assignee: Hefei Qizhong Technology Co ltd; Chipmore Technology Corp Ltd
Priority date: 2022-03-22
Filing date: 2022-03-22
Publication date: 2022-06-28
Anticipated expiration: 2042-03-22
Also published as: CN114672780B

Abstract

The invention discloses a wafer tray and wafer sputtering equipment, wherein the wafer tray comprises: the tray body is provided with a wafer positioning groove which is arranged at an upward opening and used for positioning a wafer; the outer anti-splashing groove is arranged on the tray body and is positioned beside the wafer positioning groove, and the outer anti-splashing groove is wound outside the wafer positioning groove in an arc shape; the baffle piece is oppositely arranged between the outer anti-splash groove and the wafer positioning groove. According to the invention, the outer anti-splash groove is arranged on the wafer tray and beside the wafer positioning groove, when the wafer tray bears the wafer to the coating process cavity, the formed film layer is formed in the outer anti-splash groove, and when the plasma bypasses the gap part and bombards the metal film in the outer anti-splash groove in the etching process, the bombarded ions are generally directly deposited on the side wall of the outer anti-splash groove, so that the ions deposited on the wafer tray are effectively prevented from splashing to the upper surface of the wafer, and the coating quality is improved.

Description

Wafer tray and wafer sputtering equipment

Technical Field

The invention relates to the technical field of plasma etching and wafer vacuum coating, in particular to a wafer tray and wafer sputtering equipment.

Background

The film coating technology, also called thin film technology, is a physical or chemical method under vacuum condition to make the surface of an object obtain a required film body. The coating technology is widely applied to the fields of acid resistance, corrosion resistance, heat resistance, surface hardening, photoelectric communication, integrated electronics, new energy and the like. The physical vapor deposition vacuum coating technique (since the method is basically performed in a vacuum environment, it is called a vacuum coating technique). The vacuum coating technique is characterized in that metal to be coated or an object to be coated is positioned in a vacuum cavity, and a certain method is adopted to heat or bombard a material to be coated, so that the metal is evaporated or ionized, and is condensed into a metal film on the surface of the object to be coated.

The etching process is a dry etching technique using plasma. The etching is usually performed by using a higher pressure and a lower rf power to make atoms or molecules on the surface layer of the wafer substrate contact with active atoms in the plasma atmosphere and react to form gaseous products to leave the crystal plane.

The etching process and the film technology are common means in the chip manufacturing process, and the metal sputtering machine is special equipment for performing plasma etching on the surface of a wafer and sputtering a layer of required metal film. In the production process of the equipment, the wafer is required to be placed on a wafer tray and is automatically conveyed into a machine process cavity through a machine internal conveying mechanism to carry out an etching process and a film coating process on the wafer. Specifically, in the etching process, a metal layer formed in the thin film process of the wafer tray is etched and splashed back to the surface of the wafer, so that the subsequent film coating process of the wafer is influenced, and the quality of the coated thin film is reduced.

In order to avoid the metal layer formed by sputtering on the wafer tray from sputtering on the surface of the wafer in the etching process, a shielding baffle plate is generally arranged in the machine table process chamber and arranged at the upper side of the positioned wafer tray, a wafer positioning groove for positioning the wafer is arranged on the wafer tray, a baffle plate body and a baffle plate through hole are arranged on the shielding baffle plate, the wafer placed on the wafer tray is exposed outwards through the baffle plate through hole, and the rest parts of the wafer tray except the wafer positioning hole are covered by the baffle plate body. The arrangement of the structure enables the metal film formed on the tray body to be unaffected when being etched, so that ions generated after the metal film is etched are prevented from being sputtered to the upper surface of the wafer, and subsequent coating is affected.

However, in the actual use process, because a certain gap exists between the shielding baffle and the wafer tray, the portion, close to the wafer positioning groove, of the covered portion of the tray body through the gap can still be bombarded by the etching laser, and bombarded ions can be sputtered to the upper surface of the wafer through the gap, and the problem is not effectively solved.

Therefore, it is necessary to provide a wafer tray capable of effectively preventing the metal film on the tray from splashing on the upper surface of the wafer during the etching process.

Disclosure of Invention

The invention aims to provide a wafer tray, which can effectively avoid the phenomenon that ions deposited on the wafer tray are sputtered to the upper surface of a wafer so as to improve the quality of a coating film, and solves the defects in the prior art.

The invention provides a wafer tray, comprising:

the tray body is provided with a wafer positioning groove which is arranged at an upward opening and used for positioning a wafer;

the outer anti-splashing groove is arranged on the tray body and is positioned beside the wafer positioning groove, and the outer anti-splashing groove is wound outside the wafer positioning groove in an arc shape;

and the barrier piece is oppositely arranged between the outer anti-splashing groove and the wafer positioning groove.

Furthermore, the tray body is also provided with an inner anti-splashing groove which is arranged in the wafer positioning groove and exposed to the wafer positioning groove, the inner anti-splashing groove is arranged at the edge of the wafer positioning groove in an arc shape, and a wafer supporting table for supporting a wafer is oppositely formed in the center of the wafer positioning groove.

Further, the opening width of the inner anti-splashing groove is not more than 2 mm.

Further, the outer anti-splash groove and the inner anti-splash groove are arranged in parallel, the inner anti-splash groove and the outer anti-splash groove are arranged on two opposite sides of the barrier piece, and the barrier piece and the inner anti-splash groove are arranged in parallel.

Furthermore, the bottom surface of the tray body is provided with a fork frame positioning groove with a downward opening, the position of the inner anti-splash groove and the position of the fork frame positioning groove are staggered, and the position of the outer anti-splash groove and the position of the fork frame positioning groove are staggered.

Furthermore, the tray body is rectangular and is provided with a long side and a wide side, the fork positioning groove extends along a direction parallel to the wide side of the tray body, and the fork positioning groove is arranged on the bottom surface of the tray body and is close to the wide side; one end of the inner anti-splash groove extends towards the wide side direction and is not beyond the position corresponding to the fork frame positioning groove;

one end of the outer anti-splash groove extends towards the broadside direction to a position which is not beyond the position corresponding to the fork frame positioning groove.

Further, the width of the barrier member does not exceed 3 mm.

Furthermore, still have the setting on the tray body and be in the wafer supporting bench in the wafer positioning groove, the wafer supporting bench sets up the central point of wafer positioning groove puts, just the size of wafer supporting bench is less than the size of wafer positioning groove is in order to prevent the backsplash groove in the side formation of wafer supporting bench.

The invention also discloses wafer sputtering equipment, which comprises a rack, a tray positioning table arranged on the rack, a plasma source arranged on the upper side of the tray positioning table, a shielding baffle plate arranged between the plasma source and the tray positioning table and a wafer tray, wherein the shielding baffle plate is arranged between the plasma source and the tray positioning table; the tray positioning table is provided with a positioning mechanism which is matched with the wafer tray and used for positioning the wafer tray;

the shielding baffle is provided with a baffle body and a baffle through hole arranged on the baffle body, and the shielding baffle is arranged on the upper side of the wafer tray after the wafer tray is positioned;

the baffle plate through hole is opposite to the wafer positioning groove and used for exposing the wafer positioning groove outwards, and the baffle plate body is opposite to the outer anti-splashing groove and covers the outer anti-splashing groove.

Furthermore, the baffle body is opposite to the position of the barrier piece, and covers part of the barrier piece.

Compared with the prior art, the outer anti-splash groove which is in an arc shape and surrounds the wafer positioning groove is arranged on the wafer tray and is positioned beside the wafer positioning groove, when the wafer tray bears the wafer to the coating process cavity, the formed film layer is formed in the outer anti-splash groove, when the wafer tray bears the wafer to the etching process cavity, when the plasma bypasses the gap part and bombards the metal film in the outer anti-splash groove, the bombarded ions are generally directly deposited on the side wall of the outer anti-splash groove, and the bombarded ions are difficult to cross the barrier part due to the existence of the barrier part, so that the ions are finally deposited in the outer anti-splash groove, the ions deposited on the wafer tray are effectively prevented from being splashed to the upper surface of the wafer, and the coating quality is improved.

Drawings

FIG. 1 is a schematic view of a wafer tray in a prior art in cooperation with a shielding plate during use;

FIG. 2 is a schematic view of a wafer tray according to an embodiment of the present invention in cooperation with a shielding plate during use;

FIG. 3 is a schematic view of a mounting structure of a wafer tray on a positioning mechanism according to an embodiment of the disclosure;

FIG. 4 is a schematic structural diagram of a wafer tray after being positioned by a pre-positioning mechanism according to an embodiment of the present disclosure;

FIG. 5 is a schematic diagram of a first structure of a wafer tray according to an embodiment of the disclosure;

FIG. 6 is a second structural diagram of a wafer tray according to an embodiment of the present disclosure;

FIG. 7 is a top view of a wafer pallet disclosed in an embodiment of the present invention;

FIG. 8 is a cross-sectional view taken in the direction CC of FIG. 7;

FIG. 9 is an enlarged view of a portion of FIG. 8 at A;

FIG. 10 is a right side view of a wafer pallet disclosed in an embodiment of the present invention;

FIG. 11 is a schematic structural diagram of a positioning mechanism according to an embodiment of the disclosure;

FIG. 12 is a schematic view of a first configuration of a pre-positioning mechanism disclosed in an embodiment of the present invention;

FIG. 13 is a second schematic diagram of a pre-positioning mechanism disclosed in the embodiments of the present invention;

description of reference numerals: 1-tray body, 10-pinhole, 11-wafer positioning groove, 111-edge part, 112-left wafer positioning groove, 113-right wafer positioning groove, 114-middle wafer positioning groove; 12-a wafer support table and 13-an inner anti-splashing groove; 14-separating part, 15-long side, 16-wide side, 17-groove side body, 18-fork positioning groove, 19-pre-positioning groove,

2-an outer anti-splash groove, 21-a left outer anti-splash groove, 22-a middle anti-splash groove, 23-a right outer anti-splash groove, 3-a baffle piece, 4-a middle positioning part, 5-a shielding baffle, 51-a baffle body, 52-a baffle perforation,

6-positioning mechanism, 61-pin supporting plate, 62-thimble, 63-pre-positioning mechanism, 631-positioning support, 6311-transverse mounting plate, 6312-vertical mounting plate, 632-roller shaft, 6321-supporting shaft, 6322-roller body,

100-wafer, 200-metal film, 300-gap.

Detailed Description

The embodiments described below with reference to the drawings are illustrative only and should not be construed as limiting the invention.

The embodiment of the invention comprises the following steps: the wafer tray is used for bearing wafers and conveying the wafers to different process chambers, the wafers are conveyed to the film coating process chambers by the wafer tray in the film coating process, and the wafers are conveyed to the etching process chambers by the wafer tray in the etching process. Due to the fact that the wafer tray moves back and forth in the film coating process cavity and the etching process cavity, a metal film layer can be generated on the surface of the wafer tray when the film coating process cavity is formed, the metal film layer is easy to ionize to form ions after being bombarded by laser plasma in the etching process, the ionized ions can be splashed and deposited on the upper surface of the wafer, and therefore the quality of a film generated by the wafer in the subsequent film coating process is affected.

In order to avoid the above problems, as shown in fig. 1, a shielding baffle 5 is generally disposed in the etching chamber process chamber during the etching process, and the shielding baffle 5 covers the area outside the wafer positioning groove 11 of the tray body, so as to prevent the plasma from bombarding the area outside the wafer positioning groove 11 during the etching process, but since a gap 300 is disposed between the shielding baffle 5 and the tray body 1, the plasma can affect the area outside the wafer positioning groove 11 of the tray body 1 through the gap 300, and ions generated by the bombarded metal thin film 200 can also be sputtered onto the upper surface of the wafer 100 through the gap 300, which still affects the quality of the film coating of the wafer 100.

In order to solve the above technical problem, the present embodiment, as shown in fig. 2 to 9, discloses a wafer tray, which includes a tray body 1, an outer anti-splash groove 2 and a barrier member 3, wherein the tray body 1 has a wafer positioning groove 11 that is opened upward and is used for positioning a wafer 100; the outer anti-splash groove 2 is arranged on the tray body 1 and located beside the wafer positioning groove 11, and the outer anti-splash groove 2 is wound outside the wafer positioning groove 11 in an arc shape; the barrier 3 is oppositely arranged between the outer anti-splash groove 2 and the wafer positioning groove 11.

As shown in fig. 2, in the embodiment, the outer anti-sputtering-back groove 2 surrounding the wafer positioning groove 11 in an arc shape is disposed beside the wafer positioning groove 11, when the wafer tray carries the wafer to the coating process chamber, the formed metal film 200 is formed in the outer anti-sputtering-back groove 2, when the wafer tray carries the wafer to the etching process chamber, because the metal film 200 formed outside the wafer positioning groove 11 is generated in the groove, when the plasma detours the gap portion 300 to bombard the metal film 200 in the outer anti-sputtering-back groove 2, the bombarded ions are generally directly deposited on the sidewall of the outer anti-sputtering-back groove 2, and because the bombarded ions existing in the barrier 3 are difficult to cross the barrier 3 and are finally deposited in the outer anti-sputtering-back groove 2, the arrangement of the structure effectively prevents the ions deposited on the wafer tray from sputtering the upper surface of the wafer 100, thereby improving the quality of the film layer formed in the subsequent coating process.

The height of the barrier 3 is higher than that of the wafer positioning groove 11 and the outer anti-splash groove 2 at the two sides, which is equivalent to that a layer of barrier is arranged between the outer anti-splash groove 2 and the wafer positioning groove 11, and if a film deposited in the anti-splash groove 2 needs to splash onto the upper surface of the wafer 100, the film needs to cross the barrier 3, so that the barrier 3 forms an effective barrier for ion sputtering.

During the use process, it is found that if the width of the barrier 3 is large, a metal film is deposited on the barrier 3 itself during the coating process, and ions sputtered from the barrier 3 by the plasma will also sputter onto the wafer.

Therefore, in order to better improve the coating quality, the width of the barrier 3 is not more than 3 mm. When the width of the barrier 3 is relatively narrow, it is less likely that a metal thin film will be formed on the barrier 3, and even if the metal thin film is formed, the sputtering action of the metal thin film on the wafer by the plasma will be relatively less affected.

The arrangement of the outer anti-splashing groove 2 is to form a film originally formed on the tray body 1 in the outer anti-splashing groove 2, so that ions bombarded by plasma are prevented from splashing to the upper surface of the wafer in the process of being bombarded by the plasma. In the above process, the width dimension of the outer anti-splash groove 2 cannot be too narrow, and the width of the outer anti-splash groove 2 is not less than 20mm in this embodiment. If the width of the outer anti-splash groove 2 is too narrow, the upper surface of the tray body 1 still has a part of the metal film 200, which is close to the wafer and thus affects the upper surface of the wafer.

In order to conveniently place the wafer in the wafer positioning groove 11, the size of the wafer positioning groove 11 is generally set to be larger than the corresponding wafer 100, specifically, the diameter of the wafer positioning groove 11 is at least 2mm larger than the diameter of the wafer, so that after the wafer is positioned to the center position in the wafer positioning groove 11, the gap between the edge of the wafer 100 and the side wall of the wafer positioning groove 11 is at least 1mm, so as to more conveniently achieve the picking and placing of the wafer 100 in the wafer positioning groove 11.

In the prior art, as shown in fig. 1, due to the existence of the gap of 1mm, the edge portion 111 of the wafer positioning groove 11, which is offset from the wafer 100, is likely to form a metal thin film 200 during the process of coating, and further, the metal thin film 200 is bombarded by the plasma, and after being bombarded, the thin film of the edge portion 111 is likely to cause ions to be sputtered onto the upper surface of the wafer 100 or the side surface of the wafer 100, thereby affecting the coating quality of the wafer 100.

In order to avoid the above problem, in this embodiment, the tray body 1 further has an inner anti-splash groove 13 disposed in the wafer positioning groove 11 and exposed to the wafer positioning groove 11, the inner anti-splash groove 13 is disposed at an edge of the wafer positioning groove 11 in an arc shape, and a wafer supporting table 12 for supporting a wafer is oppositely formed at a center of the wafer positioning groove 11.

As shown in fig. 5, the inner anti-splash groove 13 surrounds the wafer support stage 12, and the inner anti-splash groove 13 is actually a groove body formed at the bottom of the wafer positioning groove 11 and disposed in the wafer positioning groove 11 and at the edge of the wafer positioning groove 11. The arrangement of the inner anti-splashing groove 13 enables a metal film formed by deposition in the film coating process to be deposited in the inner anti-splashing groove 13, and ions splashed out of the film in the inner anti-splashing groove 13 are splashed back to the side wall of the inner anti-splashing groove 13 under the bombardment action of plasma in the etching process, so that the side wall of the wafer 100 and the upper surface of the wafer 100 are prevented from being splashed back.

Further, in the present embodiment, the opening width of the inner splash prevention groove 13 does not exceed 2 mm. Preferably, the opening width of the inner anti-splash groove 13 is 1.5 mm.

In the actual use process, when the opening width of the inner anti-splash groove 13 is larger, the amount of the thin film deposited in the inner anti-splash groove 13 is also larger, and the space of the inner anti-splash groove 13 is also increased due to the increase of the opening, so that the space of the inner anti-splash groove 13, in which the metal ions generated after the deposited thin film is bombarded, drifts in the inner anti-splash groove 13 is also larger, and the ions can not quickly find the attachment point and easily splash to the back surface of the wafer 100, thereby causing the degree of splashing on the back surface of the wafer 100 and influencing the coating of the wafer 100.

In this embodiment, the opening of the inner anti-splashing groove 13 is set to be not more than 2mm, and the narrow space can make the bombarded metal ions always easily contact with the side wall of the inner anti-splashing groove 13 in the floating process, that is, the bombarded ions can find the attachment point more closely and more quickly, so that the metal ions are rapidly deposited on the side wall of the inner anti-splashing groove 13, thereby avoiding the floating in the space as much as possible and reducing the influence on the back surface of the wafer 100.

In addition, the opening of the inner anti-splashing groove 13 is set to be 1.5mm, so that the processing and the manufacturing can be more conveniently realized, and the opening of the existing processing technological process can be conveniently set to be a groove body with the diameter of 1.5 mm.

In the above embodiment, it can be regarded as that a groove is dug in the wafer positioning groove 11 to form the inner anti-splash groove 13, and in another embodiment, the inner anti-splash groove 13 can also be formed in the following manner, specifically, the tray body 1 further has a wafer supporting table 12 disposed in the wafer positioning groove 11, the wafer supporting table 12 is disposed at the center of the wafer positioning groove 11, and the size of the wafer supporting table 12 is smaller than that of the wafer positioning groove 11 to form the inner anti-splash groove 13 beside the wafer supporting table 12.

In the above process, the wafer supporting platform 12 protruding upward relatively is arranged inside the wafer positioning groove 11, so that the inner anti-splash groove 13 recessed relatively is formed at the edge of the wafer supporting platform 12, it should be noted that, for convenience, the wafer positioning groove 11 positions and supports the wafer, the height of the wafer supporting platform 12 is not greater than the depth of the wafer positioning groove 11, that is, the upper surface of the wafer supporting platform 12 does not protrude out of the upper surface of the tray body 1.

Preferably, the radius of the wafer supporting table 12 is smaller than the radius of the wafer positioning groove 11 by 1.5mm, and the arrangement of the structure enables the opening size of the inner anti-splashing groove 13 to be smaller than 1.5mm, so that the opening of the inner anti-splashing groove 13 is prevented from being too large.

The too large opening of the inner anti-splashing groove 13 causes the larger drifting space of ions in the inner anti-splashing groove 13 after being bombarded, and the problem that the ions are easy to splash on the back of the wafer 100 due to the larger drifting space in the inner anti-splashing groove 13 is solved, thereby affecting the film coating of the wafer.

In this embodiment, as shown in fig. 2, the outer anti-splash groove 2 is disposed in parallel with the inner anti-splash groove 13, the inner anti-splash groove 13 and the outer anti-splash groove 2 are disposed on opposite sides of the barrier 3, and the barrier 3 is disposed in parallel with the inner anti-splash groove 13.

The inner anti-splashing groove 13 and the outer anti-splashing groove 2 are matched with each other for use so as to more comprehensively and furthest slow down the influence on the wafer, and the outer anti-splashing groove 2 is annularly arranged at the edge of the wafer positioning groove 11 so as to play a role in the edge of the round wafer 100.

Furthermore, a plurality of wafer positioning grooves 11 are generally arranged on one tray body 1 in parallel, so that simultaneous operation of a plurality of wafers is conveniently realized, and in this embodiment, three wafer positioning grooves 11 are arranged on the tray body 1. The tray body 1 is rectangular and has a length direction and a width direction, the three wafer positioning grooves 11 are arranged in parallel along the length direction of the tray body 1, and the two adjacent wafer positioning grooves 11 are adjacent to each other.

As shown in fig. 7, the wafer positioning slot 11 of the present embodiment has three

wafer positioning slots

112, 113 and a middle wafer positioning slot 114 disposed between the left wafer positioning slot 112 and the right wafer positioning slot 113.

The outer side of the left wafer positioning groove 112 is provided with a left outer anti-splash groove 21 surrounding the left wafer positioning groove 112, the outer side of the middle wafer positioning groove 113 is provided with a middle outer anti-splash groove 22 surrounding the middle wafer positioning groove 113, and the outer side of the right wafer positioning groove 114 is provided with a right outer anti-splash groove 23 surrounding the right wafer positioning groove 114.

Since the left wafer positioning groove 112 and the middle wafer positioning groove 114 are adjacent to each other and both have a circular shape, the left outer anti-splash groove 21 and the middle anti-splash groove 22 overlap each other at the intersecting position. Accordingly, the right outer anti-splash groove 23 and the middle anti-splash groove 22 also overlap each other.

In addition, because adjacent left wafer positioning groove 112 is adjacent to middle wafer positioning groove 114, and need not set up outer anti-splash groove 2 in adjacent position, simultaneously, because left wafer positioning groove 112 and right wafer positioning groove 113 set up the position that is close to the edge in the length direction of tray body 1, because be provided with the crotch constant head tank 18 that the downwardly opening set up in the position that is close to tray body 1 edge, and because the thickness of tray body 1 is limited, consequently do not generally set up outer anti-splash groove 2 in the position that the upper surface of tray body 1 is relative with crotch constant head tank 18 position, otherwise can influence the stability of tray body 1. Therefore, the arrangement of the outer anti-splash grooves 2 on the upper surface of the tray body 1 is generally misaligned with the fork positioning grooves 18.

The arrangement of the above structure causes the left outer splashback groove 21 to be divided into two parts by the left wafer positioning groove 112, the two parts being oppositely arranged in the width direction and being disposed on opposite sides of the left wafer positioning groove 112.

The middle anti-splash groove 22 is divided into two parts by the middle wafer positioning groove 114, and the two parts are oppositely arranged in the width direction and are arranged at two opposite sides of the middle wafer positioning groove 114.

The right anti-splashback groove 23 is divided into two parts by the right wafer positioning groove 113, the two parts being disposed opposite in the width direction and disposed on opposite sides of the right wafer positioning groove 113.

The left outer anti-splash groove 21, the right outer anti-splash groove 23 and the middle anti-splash groove 22 which are relatively positioned on the same side are communicated with each other and are wavy on the whole.

As shown in fig. 6 and 7, in the present embodiment, the tray body 1 is further provided with an intermediate positioning portion 4 for positioning the tray body, the intermediate positioning portion 4 is provided on the tray body 1 and is open downward, and the intermediate positioning portion 4 is provided at an intermediate position in the length direction on the tray body 1. The middle positioning portion 4 is used for positioning the tray body 1 in the length direction of the tray body 1 when the tray body 1 is loaded at a station.

There is certain requirement and restriction to the thickness of tray body 1 in the in-service use, and the thickness of tray body 1 generally requires not too thick, if tray body 1 is too thick can influence tray body 1 and enter into the working chamber. Therefore, the recess formed by the middle positioning part 4 needs to be avoided, the region opposite to the middle positioning part 4 on the tray body 1 is not provided with the outer anti-splashing groove 2 in the embodiment, otherwise, the corresponding positions of the upper side and the lower side of the tray body 1 are provided with the grooves, so that the tray body 1 is seriously thinned, and the stability of the tray body 1 is further influenced.

As shown in fig. 7, in the present embodiment, a partition portion 14 is formed on the upper surface of the tray body 1 corresponding to the region opposed to the middle positioning portion 4, and the partition portion 14 divides the middle splashback-preventing groove 22 into two portions opposed to each other in the longitudinal direction. The partition 14 is in fact a portion of the upper surface of the tray body 1 at the high point of the intermediate anti-splash slots 22 formed on opposite sides. The size of the partition part 14 is relatively narrow, even if a metal film is formed on the partition part 14, splashing on the upper surface of the wafer can not be formed in the etching process, the influence on the film coating on the surface of the wafer is small, and the stability of the tray body 1 in the use process is greatly improved.

As shown in fig. 10, in order to facilitate the transfer movement of the tray body 1, the bottom surface of the tray body 1 is provided with a fork positioning groove 18 which is open downward, the position of the inner splash-proof groove 13 is offset from the position of the fork positioning groove 18, and the position of the outer splash-proof groove 2 is also offset from the position of the fork positioning groove 18.

The mutual offset in the present embodiment means that the inner splash-proof grooves 13 are not provided, and the outer splash-proof grooves 2 are not provided, on the upper surface of the tray body 1 at the regions opposed to the fork positioning grooves 18. The thickness of the tray body 1 is limited by the structure, and if the outer anti-splash groove 2 is arranged in the area opposite to the fork frame positioning groove 18 on the tray body 1 or the inner anti-splash groove 13 is arranged in the area, the tray body 1 is easy to thin in the area, so that the supporting strength of the wafer tray is influenced, and the stable use is further influenced.

In the present embodiment, the tray body 1 is rectangular and has a long side 15 and a wide side 16, and the fork positioning grooves 18 extend in a direction parallel to the wide side 16 of the tray body 1, that is, the fork positioning grooves 18 extend in the width direction of the tray body 1. The fork positioning groove 18 is arranged on the bottom surface of the tray body 1 and close to the wide side 16, the tray body 1 is further provided with a groove side body 17 formed between the fork positioning groove 18 and the wide side 16, and the fork positioning groove 18 is recessed relative to the groove side body 17.

One end of the inner anti-splash groove 13 extends towards the wide side 16 at a position not exceeding the position corresponding to the fork positioning groove 18;

one end of the outer splash-proof groove 2 extends towards the wide side 16 to a position not exceeding the position corresponding to the fork positioning groove 18.

The fork positioning groove 18 is arranged at a position close to the wide side 16, so that the area opposite to the position of the fork positioning groove 18 on the upper surface of the tray body 1 is narrower, the outer anti-splash groove 2 cannot be arranged in the area for ensuring the firmness of the tray body 1, and therefore, the narrower the area is, the influence of a metal film formed on the tray body 1 on the sputtering of the upper surface of a wafer in the etching process can be avoided.

The invention also discloses a wafer sputtering device, which comprises a rack, a tray positioning table arranged on the rack, a plasma source arranged on the upper side of the tray positioning table, a shielding baffle plate 5 arranged between the plasma source and the tray positioning table and a wafer tray; a positioning mechanism 6 which is matched with the wafer tray and used for positioning the wafer tray is arranged on the tray positioning table;

the shielding baffle 5 is provided with a baffle body 51 and a baffle through hole 52 arranged on the baffle body 51, and after the wafer tray is positioned, the shielding baffle 5 is arranged on the upper side of the wafer tray;

the baffle through hole 52 is located opposite to the wafer positioning groove 11 and is used for exposing the wafer positioning groove 11 outwards, and the baffle body 51 is located opposite to the outer anti-splash groove 2 and is used for covering the outer anti-splash groove 2.

The baffle 5 is shielded in order to prevent that the anti-splash groove 2 forms outward and cover through setting up in the disclosed wafer degree of spattering equipment of this embodiment, set up and prevent that anti-splash groove 2 can make the metal film that forms originally at the wafer tray upper surface form the tank bottom at the recess outward, increased the distance and the degree of difficulty that metal ion spattered to wafer upper surface in the etching process, shield simultaneously that baffle 5 covers can be better prevent that metal film from preventing splashing in the anti-splash groove 2 outward after being ionized on preventing anti-splash groove 2 outward.

Preferably, the baffle body 51 is opposite to the position of the barrier member 3, and covers part of the barrier member 3. The baffle body 51 covers the position of the baffle piece 3, so that the effect that the plasma enters the outer anti-splashing groove 2 through the gap can be weakened, and metal ions can be better prevented from splashing out when the plasma acts on a metal film formed in the outer anti-splashing groove 2.

The position of the baffle through hole 52 is opposite to the position of the wafer positioning slot 11, the size of the baffle through hole 52 is slightly larger than the size of the wafer positioning slot 11, and the position of the baffle body 51 at the edge of the baffle through hole extends to the edge of the baffle 3 near the wafer positioning slot towards the center.

In a specific using process, the wafer tray can move back and forth among the wafer loading area, the etching process cavity and the film coating process cavity, and in the wafer loading area, the wafers are unloaded from the wafer boat under the action of the mechanical arm, then are loaded onto the tray body 1 and finally are positioned in the wafer positioning grooves 11. The tray body 1 loaded with the wafer is conveyed into an etching process cavity for etching under the action of a conveying mechanism of wafer sputtering equipment, an oxide film on the upper surface of the wafer is removed in the etching process, then the wafer is conveyed into a film coating process cavity for film coating, a layer of metal film is formed on the surface of the wafer after the film coating is finished, and after the coated wafer is unloaded, the wafer tray is operated to a loading area again for loading the next wafer.

As shown in fig. 11-13, in order to achieve more precise positioning of the wafer in the wafer positioning slot 11 during loading, the positioning mechanism 6 includes a pin receiving mechanism, which includes a pin receiving support plate 61 and a plurality of ejector pins 62 disposed on the pin receiving support plate 61, and the ejector pins 62 are vertically positioned on the pin receiving support plate 61 and can move up and down in the vertical direction.

The tray body 1 is provided with a pinhole 10 adapted to the thimble, the thimble 62 moves upward and passes through the pinhole 10 after the tray body 1 is positioned, and the thimble 62 protrudes out of the upper surface of the tray body 1 and is used for supporting the wafer 100. The wafer 100 is placed on the tray body 1 by the robot, and then the ejector pins 62 are lowered downward, and the wafer 100 is finally positioned in the wafer positioning grooves 11 along with the downward movement of the ejector pins 62.

Load wafer 100 through thimble 62 and can make more accurate location of wafer 100 to the wafer positioning groove 11 in, the size of the radius of wafer positioning groove 11 among the prior art generally sets up only than the size 1mm of the radius of wafer 100, must be very high to the accurate location requirement of wafer 100 like this, simultaneously because the wafer tray is in the state of activity, the position every time all has the deviation, but the position that robotic arm snatched the wafer is definite, it is difficult to load the wafer to the wafer tray through the manipulator with the wafer is accurate, it is very high to the location requirement.

In this embodiment, after the tray body 1 is operated in place, the position of the tray body 1 is located by the cooperation of the thimble 62 and the pinhole 10 on the tray body 1. However, in the actual use process, the tray body 1 is often deviated, which causes mutual dislocation between the thimble 62 and the pinhole 10, the thimble 62 cannot effectively penetrate into the pinhole 10, and the thimble 62 is likely to jack up the tray body 1, thereby affecting the loading of the wafer 100.

As shown in fig. 3 and fig. 11 to 13, in order to solve the above problem, an embodiment of the present invention further discloses a wafer tray positioning structure, including:

a tab pin support plate 61;

a thimble 62 provided on the contact pin support plate 61 and arranged perpendicular to the contact pin support plate 61;

and the pre-positioning mechanism 63 is provided with a positioning support 631 arranged on the contact pin supporting plate 61 and a roller shaft 632 rotatably mounted on the positioning support 631, wherein the axial direction of the roller shaft 632 is parallel to the plane of the contact pin supporting plate 61.

Through pre-positioning mechanism 63 and the cooperation of positioning groove 19 on tray body 1 before the location through thimble 62 in order to carry out the pre-positioning to tray body 1, thimble 62 just in time is relative with pinhole 10 position on tray body 1 after the pre-positioning to convenient realization thimble 62 wears to establish pinhole 10, thereby better realization the location material loading of wafer 100 on tray body 1.

The accuracy of positioning can be effectively improved through the roller shaft 632, and the situation that the pre-positioning mechanism 63 is clamped on the tray body 1 and cannot be completely positioned in the pre-positioning groove 19 is avoided, so that positioning inaccuracy is caused. Because the roller 632 can rotate, so when the roller 632 prepositions the tray body 1, the roller 632 can rotate, so that the problem of clamping on the side wall of the prepositioning groove 19 can not occur.

In this embodiment, the pre-positioning mechanisms 63 are arranged in pairs opposite to each other and located on both sides of the splicing needle support plate 61. A plurality of sets of pre-positioning mechanisms 63 can be provided on the tab support plate 61 to better achieve positioning.

The top needle supporting plate 61 is rectangular and comprises a length direction and a width direction, and a group of pre-positioning mechanisms 63 are oppositely arranged along the length direction of the top needle supporting plate 61 and are positioned on the positions, close to the edges, of the pre-positioning mechanisms 63.

The predetermined mechanism 63 is disposed at the edge of the top plate pin support plate 61, so that the space inside the top plate pin support plate 61 can be occupied less, and a wafer tray can be disposed better.

The pre-positioning mechanism 63 is provided at the center position in the width direction of the top sheet needle support plate 61. The central position of the fixing needle supporting plate 61 in the width direction can more stably position the tray body 1.

The positioning bracket 631 comprises a transverse mounting plate 6311 and a vertical mounting plate 6312 vertically arranged with the transverse mounting plate 6311, the transverse mounting plate 6311 is attached to the contact pin support plate 61, and the roller shaft 632 is rotatably mounted on the vertical mounting plate 6311.

Horizontal mounting plate 6311 has the fixed laminating and is in the laminating installation department of joint piece needle backup pad 61 sets up with extending the outer connecting portion of joint piece needle backup pad 61, vertical mounting plate 6312 is fixed on the connecting portion.

The roller shaft 632 comprises a support shaft 6321 fixed on the vertical mounting plate 6312 and a roller body 6322 rotatably mounted on the support shaft 6321, wherein the roller body 6322 is a cylinder.

The invention also discloses wafer sputtering equipment, which comprises a rack, a tray positioning table arranged on the rack, a wafer tray and the wafer tray positioning structure, wherein the wafer tray positioning structure is arranged on the tray positioning table;

the wafer tray comprises a tray body 1, a pre-positioning groove 19 and a pinhole 10, wherein the pre-positioning groove 19 and the pinhole 10 are arranged on the tray body 1, and the roller shaft of the roller shaft 632 is matched with the pre-positioning groove 19; the pinhole 10 is matched with the thimble 62, and after the pre-positioning groove 19 is matched with the roller shaft 632 in a positioning manner, the pinhole 10 is opposite to the thimble 62.

The wafer tray moves back and forth among the wafer loading area, the etching process cavity and the coating process cavity under the action of the conveying mechanism, the wafer tray controls the contact pin supporting plate 61 to approach to the tray body 1 on the upper side when moving to the wafer loading area, and the roller 632 is positioned in the pre-positioning groove 19 in the tray body 1 in the moving approaching process, so that pre-positioning of the tray body 1 is realized. At this time, the thimble 62 is opposite to the position of the pinhole 10, and the thimble 62 is controlled to move upward to penetrate the pinhole 10.

In the exemplary embodiment, the pre-positioning slot 19 includes a semicircular slot bottom and a guiding sidewall, wherein the diameter of the semicircular slot bottom is adapted to the outer diameter of the roller shaft 632.

It can be understood that the wafer sputtering device is also provided with a transmission mechanism for driving the wafer tray to move and a lifting mechanism for driving the ejector pins to lift.

The construction, features and functions of the present invention are described in detail in the embodiments illustrated in the drawings, which are only preferred embodiments of the present invention, but the present invention is not limited by the drawings, and all equivalent embodiments modified or changed according to the idea of the present invention should fall within the protection scope of the present invention without departing from the spirit of the present invention covered by the description and the drawings.

Claims

1. A wafer tray, comprising:

2. The wafer tray of claim 1, wherein: the tray body is further provided with an inner anti-splashing groove which is arranged in the wafer positioning groove and exposed to the wafer positioning groove, the inner anti-splashing groove is arranged at the edge of the wafer positioning groove in an arc shape, and a wafer supporting table for supporting a wafer is formed in the center of the wafer positioning groove relatively.

3. The wafer tray of claim 2, wherein: the opening width of the inner anti-splashing groove is not more than 2 mm.

4. The wafer tray of claim 2, wherein: the outer anti-splash groove and the inner anti-splash groove are arranged in parallel, the inner anti-splash groove and the outer anti-splash groove are arranged on two opposite sides of the barrier piece, and the barrier piece and the inner anti-splash groove are arranged in parallel.

5. The wafer tray of claim 2, wherein: the bottom surface of the tray body is provided with a fork frame positioning groove with a downward opening, the position of the inner anti-splashing groove and the position of the fork frame positioning groove are staggered, and the position of the outer anti-splashing groove and the position of the fork frame positioning groove are staggered.

6. The wafer tray of claim 5, wherein: the pallet body is rectangular and is provided with a long side and a wide side, the fork frame positioning groove extends along a direction parallel to the wide side of the pallet body, and the fork frame positioning groove is arranged on the bottom surface of the pallet body and is close to the wide side; the position of one end of the inner anti-splashing groove extending towards the broadside direction does not exceed the position corresponding to the fork frame positioning groove;

7. The wafer tray of claim 1, wherein: the width of the barrier is not more than 3 mm.

8. The wafer tray of claim 1, wherein: the tray body is further provided with a wafer supporting platform arranged in the wafer positioning groove, the wafer supporting platform is arranged at the center of the wafer positioning groove, and the size of the wafer supporting platform is smaller than that of the wafer positioning groove so that an inner anti-splashing groove is formed beside the wafer supporting platform.

9. A wafer sputtering apparatus comprising a frame, a tray positioning table provided on the frame, a plasma source provided on an upper side of the tray positioning table, a shield baffle provided between the plasma source and the tray positioning table, and a wafer tray as claimed in any one of claims 1 to 8; the tray positioning table is provided with a positioning mechanism which is matched with the wafer tray and used for positioning the wafer tray;

10. The wafer sputtering apparatus of claim 9, wherein: the baffle body is opposite to the position of the barrier piece, and covers part of the barrier piece.