CN114497343A - Weak light spectrum measuring device and spectrometer - Google Patents
Weak light spectrum measuring device and spectrometer Download PDFInfo
- Publication number
- CN114497343A CN114497343A CN202111580401.5A CN202111580401A CN114497343A CN 114497343 A CN114497343 A CN 114497343A CN 202111580401 A CN202111580401 A CN 202111580401A CN 114497343 A CN114497343 A CN 114497343A
- Authority
- CN
- China
- Prior art keywords
- superconducting
- buffer layer
- modulation
- photon detector
- single photon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001228 spectrum Methods 0.000 title claims abstract description 46
- 239000002070 nanowire Substances 0.000 claims abstract description 87
- 239000002086 nanomaterial Substances 0.000 claims abstract description 32
- 238000005259 measurement Methods 0.000 claims abstract description 15
- 230000003595 spectral effect Effects 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001275 Niobium-titanium Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- RJSRQTFBFAJJIL-UHFFFAOYSA-N niobium titanium Chemical compound [Ti].[Nb] RJSRQTFBFAJJIL-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- PZKRHHZKOQZHIO-UHFFFAOYSA-N [B].[B].[Mg] Chemical compound [B].[B].[Mg] PZKRHHZKOQZHIO-UHFFFAOYSA-N 0.000 claims description 2
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 claims description 2
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 claims description 2
- 238000004611 spectroscopical analysis Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 44
- 230000000694 effects Effects 0.000 abstract description 13
- 230000002708 enhancing effect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 239000000523 sample Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 150000003377 silicon compounds Chemical class 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/83—Element shape
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/042—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2803—Investigating the spectrum using photoelectric array detector
- G01J2003/2806—Array and filter array
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2803—Investigating the spectrum using photoelectric array detector
- G01J2003/2813—2D-array
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Measurement Of Radiation (AREA)
Abstract
The invention belongs to the field of spectrum equipment, and provides a weak light spectrum measuring device and a spectrometer. The light modulation micro-nano structure unit can realize a certain modulation effect on an incident light spectrum, the superconducting nanowire single photon detector unit is used for detecting modulated photons, or the superconducting nanowire single photon detector unit is also used as a light modulation structure to jointly generate a spectrum modulation effect on photons with the existing light modulation micro-nano structure unit and detect photons, so that each detection unit has a broad spectrum detection characteristic, a spectrum can be measured by using a method for calculating spectrum reconstruction, and the photon utilization rate is greatly improved. The resonance effect of the light modulation micro-nano structure also has the effect of enhancing the detection efficiency of the superconducting nanowire single photon detector, and the measurement time is shortened.
Description
Technical Field
The invention relates to the technical field of spectrum equipment, in particular to a weak light spectrum measuring device and a spectrometer.
Background
As a commonly used optical information sensing technology, spectral measurement has been widely used in a plurality of technical fields through years of development. The weak light spectrum measurement of single photon level has important application in scientific research, environment monitoring, remote sensing and remote measuring and other fields. However, the existing spectral measurement method for weak light generally depends on an adjustable narrow-band filter, such as a monochromator, and cooperates with a single-photon detector to measure the photon counting rate corresponding to each wavelength point in a point-by-point scanning mode for different wavelength points to realize spectral measurement. In the measuring process, photons outside the passband of the filter cannot be detected, so that the method has low photon utilization rate and long measuring time, is difficult to realize device function integration, and seriously limits the practical application of the technology.
Disclosure of Invention
The invention provides a weak light spectrum measuring device and a spectrometer, which are used for overcoming the defects of low photon utilization rate and long measuring time when an adjustable narrow-band filter is matched with a single photon detector to carry out weak light spectrum measurement in the prior art, and realizing the effects of improving the photon utilization rate and shortening the measuring time.
The invention provides a faint light spectrum measuring device, which comprises a substrate and at least two detection units arranged on the upper surface of the substrate, wherein each detection unit comprises: the light modulation micro-nano structure unit comprises a bottom plate and a plurality of modulation holes arranged on the bottom plate, and the modulation holes are arranged into a two-dimensional graph structure; the superconducting nanowire single photon detector unit comprises at least one superconducting nanowire, the superconducting nanowires are arranged into a two-dimensional graph structure, and the longitudinal projection of the superconducting nanowires is inserted among the modulation holes.
According to the weak light spectrum measuring device provided by the invention, the plurality of detection units comprise the modulation holes with at least two structural parameters, and/or comprise the modulation hole arrangement forms of at least two-dimensional graph structures, and/or the superconducting nanowire arrangement forms of at least two-dimensional graph structures.
According to the weak light spectrum measuring device provided by the invention, the bottom plate is positioned on the upper surface of the substrate, and the superconducting nanowire single photon detector unit is arranged on the upper surface of the bottom plate.
According to the weak light spectrum measuring device provided by the invention, a buffer layer is arranged between the bottom plate and the superconducting nanowire single-photon detector unit, one of the bottom plate and the superconducting nanowire single-photon detector unit is positioned on the lower surface of the buffer layer, and the other one of the bottom plate and the superconducting nanowire single-photon detector unit is positioned on the upper surface of the buffer layer.
According to the dim light spectrum measuring device provided by the invention, when the bottom plate is positioned on the lower surface of the buffer layer, the bottom of the buffer layer is filled with the modulation hole.
According to the weak light spectrum measuring device provided by the invention, when the superconducting nanowire single photon detector unit is positioned on the lower surface of the buffer layer, the bottom of the buffer layer is filled with the gaps among the superconducting nanowires.
According to the weak light spectrum measuring device provided by the invention, the buffer layer is made of a low-refractive-index material.
According to the dim light spectrum measuring device provided by the invention, the material of the bottom plate comprises silicon, germanium, a germanium-silicon material, a silicon compound, a germanium compound, a metal or a III-V material, wherein the silicon compound comprises silicon nitride, silicon dioxide or silicon carbide.
According to the weak light spectrum measuring device provided by the invention, the superconducting nanowire is made of niobium nitride, niobium titanium nitride, tungsten silicon, molybdenum silicon or magnesium diboride.
The invention also provides a spectrometer comprising a low-light spectral measuring device as defined in any of the preceding claims.
The invention provides a weak light spectrum measuring device which comprises a substrate and at least two detection units arranged on the upper surface of the substrate, wherein each detection unit comprises a light modulation micro-nano structure unit and a superconducting nanowire single photon detector unit. The light modulation micro-nano structure unit can realize a certain modulation effect on an incident light spectrum, and the superconducting nanowire single photon detector unit is used for detecting photons after the light modulation micro-nano structure unit acts, or the superconducting nanowire single photon detector unit is also used as a light modulation structure to jointly generate a spectrum modulation effect on the photons with the existing light modulation micro-nano structure unit and detect the photons. And each detection unit has the broad spectrum detection characteristic, and compared with the scheme that the traditional narrow-band filter is matched with a single-photon detector, the weak light spectrum measuring device provided by the invention can measure the spectrum by using a spectral reconstruction calculation method, so that the photon utilization rate is greatly improved. On the other hand, the resonance effect of the light modulation micro-nano structure also has the effect of enhancing the detection efficiency of the superconducting nanowire single photon detector, and the measurement time is shortened.
Further, the present invention also provides a spectrometer having the same advantages as described above, since it has the weak light spectrum measuring device as described above.
Drawings
In order to more clearly illustrate the technical solutions of the present invention or the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is an exploded view of a weak light spectrum measuring device with a superconducting nanowire single photon detector unit arranged on the upper surface of a bottom plate;
FIG. 2 is a cross-sectional view of a weak light spectrum measuring device with a superconducting nanowire single photon detector unit arranged on the upper surface of a base plate;
FIG. 3 is an exploded view of a weak light spectrum measuring device provided by the present invention, in which a bottom plate is arranged at the bottom of a buffer layer and a superconducting nanowire single photon detector unit is arranged at the top of the buffer layer;
FIG. 4 is a cross-sectional view of a weak light spectrum measuring device provided by the present invention, in which a bottom plate is disposed at the bottom of a buffer layer and a superconducting nanowire single photon detector unit is disposed at the top of the buffer layer;
FIG. 5 is an exploded view of a faint light spectrum measuring device provided by the invention, wherein a bottom plate is arranged at the top of a buffer layer, and a superconducting nanowire single photon detector unit is arranged at the bottom of the buffer layer;
FIG. 6 is a cross-sectional view of a weak light spectrum measuring device provided by the present invention, in which a bottom plate is disposed on the top of a buffer layer and a superconducting nanowire single photon detector unit is disposed on the bottom of the buffer layer;
reference numerals:
100: a substrate;
200: a detection unit; 200 a: a first detection unit; 200 b: a second detection unit;
200 c: a third detection unit; 200 d: a fourth detection unit; 210: light modulation micro-nano structure
A unit;
211: a base plate; 212: preparing holes; 220: superconducting nanowire single light
A sub-detector unit;
221: a superconducting nanowire;
300: and a buffer layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The faint light spectrum measuring device of the present invention is described below with reference to fig. 1 to 6.
The invention provides a weak light spectrum measuring device which comprises a substrate 100 and at least two detection units 200, wherein the detection units 200 are arranged on the upper surface of the substrate 100. Each detection unit 200 comprises a light modulation micro-nano structure unit 210 and a superconducting nanowire single photon detector unit 220.
The light modulation micro-nano structure unit 210 comprises a bottom plate 211 and a plurality of modulation holes 212, wherein the modulation holes 212 are processed on the bottom plate 211 in an etching mode and distributed on the bottom plate 211 according to a certain rule to form a one-dimensional or two-dimensional graph structure. The plurality of modulation apertures 212 produce a certain modulation of the spectrum of incident light including, but not limited to, scattering, absorption, diffraction, reflection, interference, surface plasmons, and resonance of light. Meanwhile, the resonance effect of the light modulation micro-nano structure unit 210 can enhance the absorption efficiency of the superconducting nanowire 221 at partial wavelength points, and shorten the measurement time.
The superconducting nanowire single photon detector unit 220 comprises at least one superconducting nanowire 221, and the superconducting nanowire 221 is also of a micro-nano scale structure and corresponds to the light modulation micro-nano structure unit 210. The superconducting nanowires 221 can extend into a variety of different shapes to form one-dimensional or two-dimensional pattern structures. In the longitudinal projection view of the detection unit 200, the projection of the two-dimensional pattern structure formed by the superconducting nanowires 221 is inserted into the gap of the projection of the plurality of modulation holes 212. The superconducting nanowire single photon detector unit 220 is used for detecting photons modulated by the light modulation micro-nano structure unit 210, or the superconducting nanowire single photon detector unit 220 is also used as a light modulation structure to jointly generate a spectrum modulation effect on the photons with the existing light modulation micro-nano structure unit 210 and is used for detecting the photons.
In summary, one light modulation micro-nano structure unit 210 and one superconducting nanowire single photon detector unit 220 form one detection unit 200, each detection unit 200 has a broad spectrum detection characteristic, and compared with the scheme that a traditional narrow-band filter is matched with a single photon detector, the weak light spectrum measuring device provided by the invention can measure a spectrum by using a spectrum reconstruction calculation method, so that the photon utilization rate is greatly improved. On the other hand, the resonance effect of the light modulation micro-nano structure also has the effect of enhancing the detection efficiency of the superconducting nanowire single photon detector, and the measurement time is shortened.
In an embodiment of the present invention, the plurality of detection units 200 include at least two detection units 200 with different structural parameters, where the structural parameter may be a cross-sectional shape or a cross-sectional size of the modulation holes 212, or may be an arrangement of two-dimensional pattern structures distributed by the modulation holes 212, or may be an arrangement of two-dimensional pattern structures formed by the superconducting nanowires 221. Some exemplary specific structural parameters will be described in the following embodiments, which are not described in detail herein.
The light modulation micro-nano structure unit 210 and the superconducting nanowire single photon detector unit 220 form a detection unit 200, and the spectral response of the superconducting nanowire single photon detection is realized by utilizing the principle of reconstruction type spectral measurement and the light modulation micro-nano structure units 210 with different structural parameters, so that the spectral reconstruction with high accuracy is realized.
In one embodiment of the present invention, the modulation hole 212 and the superconducting nanowire 221 may be both disposed on the bottom plate 211, and the bottom plate 211 is disposed on the substrate 100. Referring to fig. 1, four detection units 200, which may be a first detection unit 200a, a second detection unit 200b, a third detection unit 200c, and a fourth detection unit 220d, may be disposed on one base plate 211.
The first detecting unit 200a may be disposed in a lower left quarter of the bottom plate 211, and the modulating holes 212 may have a rectangular cross section and be arranged in a longitudinal and transverse array. The superconducting nanowires 221 extending vertically are respectively arranged on the left side of the modulating holes 212 in the column on the left side, on the right side of the modulating holes 212 in the column on the right side and between two adjacent columns of modulating holes 212, the two adjacent superconducting nanowires 221 are connected end to end through connecting wires, and after the connecting, the plurality of superconducting nanowires 221 extend to form a snake-shaped structure and are inserted among the columns of modulating holes 212.
The second detecting unit 200b may be disposed in the upper left quarter of the bottom plate 211, and the modulating holes 212 may have a circular cross-section and be arranged in a longitudinal and transverse array. The superconducting nanowires 221 first bypass one modulation hole 212 at the lower right corner, then bypass three modulation holes 212 surrounding the modulation hole 212, then bypass five adjacent modulation holes 212, and finally bypass the outermost seven modulation holes 212, and the superconducting nanowires 221 form a serpentine structure interposed between the modulation holes 212.
The third probe unit 200c may be disposed at an upper right quarter of the region of the base plate 211, the third probe unit 200c is disposed in a circular structure, different from the sectional shape of the modulation hole 212 of the first probe unit 200a, and the distribution of the superconducting nanowires 221 is rotated ninety degrees with respect to the superconducting nanowires 221 in the first probe unit 200 a.
The fourth detecting unit 220d may be disposed in a lower right quarter of the bottom plate 211, the modulating holes 212 may have a circular cross section, the modulating holes 212 are annularly distributed, four modulating holes 212 are disposed in an inner circle, and ten modulating holes 212 are disposed in an outer circle. The superconducting nanowires 221 are respectively disposed between the inner ring and the outer ring, and outside the outer ring, and are all annular superconducting nanowires 221. Two vertical superconducting nanowires 221 are disposed between the four modulation holes 212 of the inner circle, and four horizontal superconducting nanowires 221 are disposed between the ten modulation holes 212 of the outer circle, forming the structure shown in fig. 1.
The cross-sectional shape of the modulation holes 212, the number of modulation holes 212, the size of the modulation holes 212, the distribution form of the modulation holes 212, and the distribution form of the superconducting nanowires 221 of each detection unit 200 are merely exemplary, and do not limit the scope of the present invention, for example, the cross-sectional shape of the modulation holes 212 is not limited to a circle, a rectangle, etc., but may be any other realizable shape such as a regular polygon or an ellipse, etc.
Referring to fig. 2, it can be seen that the base plate 211 is disposed on the upper surface of the substrate 100, and the superconducting nanowire 221 is directly disposed on the upper surface of the base plate 211.
In another embodiment of the present invention, a buffer layer 300, which may be four layers, is disposed between the bottom plate 211 and the superconducting nanowire single-photon detector unit 220, and for example, referring to fig. 3 and fig. 4, the superconducting nanowire single-photon detector unit 220, the buffer layer 300, the bottom plate 211, and the substrate 100 may be separately illustrated from top to bottom.
Referring to fig. 3, the superconducting nanowires 221 may be distributed in the same manner as the superconducting nanowires 221 in the first detection unit 200a, and the modulation holes 212 may be circular, rectangular, elliptical, or other shapes and may be distributed in an array. As long as it is ensured that the projection of the superconducting nanowire 221 is inserted into the gap of the projections of the plurality of modulation holes 212 as viewed in the longitudinal projection.
The light modulation micro-nano structure unit 210 shown in this embodiment may be any micro-nano structure having a light modulation function. For one detection unit 200, the light modulation micro-nano structure unit 210 has different reflectivity for photons with different wavelengths, the reflected photons are detected by the superconducting nanowire single photon detector unit 220 above, and different detection units 200 have different spectral responses, so that reconstruction type spectral measurement is realized. In addition, due to the arrangement of the buffer layer 300, the light modulation micro-nano structure unit 210 and the superconducting nanowire single photon detector unit 220 can form an optical resonant cavity, so that the detection efficiency of the superconducting nanowire single photon detector unit 220 is further enhanced.
In this embodiment, the material used for the buffer layer 300 is a material having a low refractive index, and may be, for example, silicon dioxide, a high molecular polymer, or the like. Referring to fig. 4, the bottom of the buffer layer 300 is matched with the bottom plate 211, the position of the bottom surface of the buffer layer 300 corresponding to the upper surface of the bottom plate 211 is fitted to the upper surface of the bottom plate 211, and the positions of the bottom of the buffer layer 300 corresponding to the modulation holes 212 of the bottom plate 211 extend downward and are filled with the modulation holes 212, so that the modulation of the light modulation micro-nano structure unit 210 is prevented from being influenced by the difference of the refractive indexes of the buffer layer 300 and air.
In another embodiment of the present invention, referring to fig. 5 and 6, a detection unit 200 is taken as an example, and the detection unit may be a bottom plate 211, a buffer layer 300, a superconducting nanowire single photon detector unit 220, and a substrate 100, respectively, from top to bottom.
Referring to fig. 5, the superconducting nanowires 221 may be distributed in the same manner as the superconducting nanowires 221 in the first detection unit 200a, and the modulation holes 212 may be circular, rectangular, elliptical, or other shapes and may be distributed in an array. As long as it is ensured that the projection of the superconducting nanowire 221 is inserted into the gap of the projections of the plurality of modulation holes 212 as viewed in the longitudinal projection.
The light modulation micro-nano structure unit 210 shown in this embodiment may be any micro-nano structure having a light modulation function. For one detection unit 200, the light modulation micro-nano structure unit 210 has different transmittances for photons with different wavelengths, the transmitted photons are detected by the superconducting nanowire single photon detector unit 220 below, and different detection units 200 have different spectral responses, so that reconstruction type spectral measurement is realized. In addition, due to the arrangement of the buffer layer 300, the light modulation micro-nano structure unit 210 and the superconducting nanowire single photon detector unit 220 can form an optical resonant cavity, so that the detection efficiency of the superconducting nanowire single photon detector unit 220 is further enhanced.
In this embodiment, the material used for the buffer layer 300 is a material having a low refractive index, and may be, for example, silicon dioxide, a high molecular polymer, or the like. Referring to fig. 6, the bottom of the buffer layer 300 is attached to the upper surface of the substrate 100 provided with the superconducting nanowires 221, the bottom of the buffer layer 300 wraps the outer sides of the superconducting nanowires 221, the bottom of the buffer layer 300 is attached to the substrate 100, and the bottom of the buffer layer 300 is filled in the gap between two adjacent superconducting nanowires 221, so that the superconducting nanowires 221 are prevented from being affected by the difference between the refractive indexes of the buffer layer 300 and air.
In the weak light spectrum measuring device provided by the invention, the light modulation micro-nano structure unit 210 for modulating light comprises but is not limited to one-dimensional and two-dimensional photonic crystals, surface plasmons, metamaterials and super surfaces. Specific materials may include silicon, germanium, silicon germanium materials, compounds of silicon, compounds of germanium, metals, group III-V materials, and the like. Wherein the silicon compound includes, but is not limited to, silicon nitride, silicon dioxide, silicon carbide, and the like.
The superconducting nanowire single photon detector unit 220 may be made of any material suitable for preparing a superconducting nanowire single photon detector, such as niobium nitride, niobium titanium nitride, and the like.
The invention also provides a spectrometer comprising a low-light spectral measuring device as described above, and therefore also having the same advantages as described above.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A faint light spectrum measuring device comprising a substrate and at least two detecting units provided on an upper surface of the substrate, wherein each of the detecting units comprises:
the light modulation micro-nano structure unit comprises a bottom plate and a plurality of modulation holes arranged on the bottom plate, and the modulation holes are arranged into a two-dimensional graph structure;
the superconducting nanowire single photon detector unit comprises at least one superconducting nanowire, the superconducting nanowires are arranged into a two-dimensional graph structure, and the longitudinal projection of the superconducting nanowires is inserted among the modulation holes.
2. The faint light spectrum measuring device of claim 1, wherein a plurality of the detecting units comprise the modulation holes of at least two structural parameters, and/or comprise modulation hole arrangement forms of at least two-dimensional graph structures, and/or comprise superconducting nanowire arrangement forms of at least two-dimensional graph structures.
3. The feeble light spectral measurement device according to claim 2, wherein the base plate is located on an upper surface of the substrate, and the superconducting nanowire single photon detector unit is disposed on the upper surface of the base plate.
4. The faint light spectrum measuring device of claim 2, wherein a buffer layer is disposed between the base plate and the superconducting nanowire single photon detector unit, and one of the base plate and the superconducting nanowire single photon detector unit is disposed on a lower surface of the buffer layer, and the other is disposed on an upper surface of the buffer layer.
5. The feeble-light spectral measurement device according to claim 4, wherein when the bottom plate is located on a lower surface of the buffer layer, a bottom of the buffer layer fills the modulation hole.
6. The feeble-light spectral measurement device of claim 4, wherein when the superconducting nanowire single photon detector unit is located on the lower surface of the buffer layer, the bottom of the buffer layer fills the gaps between the superconducting nanowires.
7. The dim light spectrum measuring device according to any one of claims 4 to 6, wherein the material of the buffer layer is a low refractive index material.
8. The feeble-light spectral measurement device of claim 1, wherein the material of the base plate comprises silicon, germanium, a silicon-germanium material, a compound of silicon, a compound of germanium, a metal, or a group III-V material, wherein the compound of silicon comprises silicon nitride, silicon dioxide, or silicon carbide.
9. The faint light spectroscopy device of claim 1, wherein the superconducting nanowires are made of niobium nitride, niobium titanium nitride, tungsten silicon, molybdenum silicon or magnesium diboride.
10. A spectrometer comprising a low-light spectral measuring device according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111580401.5A CN114497343A (en) | 2021-12-22 | 2021-12-22 | Weak light spectrum measuring device and spectrometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111580401.5A CN114497343A (en) | 2021-12-22 | 2021-12-22 | Weak light spectrum measuring device and spectrometer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114497343A true CN114497343A (en) | 2022-05-13 |
Family
ID=81493649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111580401.5A Pending CN114497343A (en) | 2021-12-22 | 2021-12-22 | Weak light spectrum measuring device and spectrometer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114497343A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117782317A (en) * | 2023-12-26 | 2024-03-29 | 北京信息科技大学 | Medium wave multispectral imaging device with nanowire super-structured surface structure and preparation method thereof |
-
2021
- 2021-12-22 CN CN202111580401.5A patent/CN114497343A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117782317A (en) * | 2023-12-26 | 2024-03-29 | 北京信息科技大学 | Medium wave multispectral imaging device with nanowire super-structured surface structure and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10312277B2 (en) | Variable optical filter and a wavelength-selective sensor based thereon | |
| TWI741440B (en) | An optical modulation micro-nano structure, micro integrated spectroscope and spectrum modulation method | |
| KR102320479B1 (en) | Spectrometer and Method for Measuring spectrum using the same | |
| CN111490060A (en) | Spectral imaging chip and spectral identification equipment | |
| TWI715345B (en) | Non-invasive blood glucose meter and blood glucose detection method | |
| US20140362374A1 (en) | Analyzing light by mode interference | |
| US20090220189A1 (en) | Transmitting Light with Lateral Variation | |
| CN111811651B (en) | Spectrum chip, spectrometer and spectrum chip preparation method | |
| WO2022032842A1 (en) | Miniature spectrum chip based on units in random shapes | |
| CN210376122U (en) | Light modulation micro-nano structure and micro-integrated spectrometer | |
| CN111811652A (en) | Spectrum chip based on sub-wavelength high-contrast grating, spectrometer and preparation method | |
| CN114497343A (en) | Weak light spectrum measuring device and spectrometer | |
| CN112067569B (en) | Slit optical waveguide sensor based on surface-enhanced infrared absorption spectrum and preparation and detection methods thereof | |
| US20230326946A1 (en) | Miniature spectrum chip based on units of different shapes, and method for generating micro-nano structure array in miniature spectrum chip | |
| JP2019118116A (en) | Resonator optimization | |
| CN211828773U (en) | Spectral imaging chip and spectral identification equipment | |
| US20220344381A1 (en) | Micro spectrum chip based on units of different shapes | |
| CN212458658U (en) | Spectrum chip and spectrometer based on sub-wavelength high-contrast grating | |
| CN211627935U (en) | Monolithic integrated image sensing chip and spectrum identification equipment | |
| CN109341858B (en) | Gradual change type scattering structure spectrum analysis device and spectrum restoration method | |
| Ahamed et al. | Unique Hyperspectral Response Design Enabled by Periodic Surface Textures in Photodiodes | |
| CN212363424U (en) | Weak light spectrum detection chip | |
| CN104810378B (en) | A kind of small size pixel quantum trap infra-red focus planar photosensitive element chip | |
| CN113406017A (en) | High-integration surface plasma resonance sensor system | |
| US20230375406A1 (en) | Light sensor and a method for manufacturing a light sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |