CN114477994A - High-power ceramic chip resistor and material and preparation thereof - Google Patents
High-power ceramic chip resistor and material and preparation thereof Download PDFInfo
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- CN114477994A CN114477994A CN202210086393.7A CN202210086393A CN114477994A CN 114477994 A CN114477994 A CN 114477994A CN 202210086393 A CN202210086393 A CN 202210086393A CN 114477994 A CN114477994 A CN 114477994A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 60
- 239000000463 material Substances 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 238000005245 sintering Methods 0.000 claims abstract description 20
- 239000002994 raw material Substances 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 13
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 10
- 229910001676 gahnite Inorganic materials 0.000 claims abstract description 8
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 24
- 239000011787 zinc oxide Substances 0.000 claims description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- 239000000395 magnesium oxide Substances 0.000 claims description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 229910000836 magnesium aluminium oxide Inorganic materials 0.000 claims 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims 1
- 238000001035 drying Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910052596 spinel Inorganic materials 0.000 description 5
- 239000011029 spinel Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
- C04B2235/3222—Aluminates other than alumino-silicates, e.g. spinel (MgAl2O4)
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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Abstract
The invention relates to a high-power ceramic chip resistor, a resistor material and preparation thereof. The chemical general formula of the ceramic resistance material is (ZnO)x(MgZnO)1‑x(ZnAl2O4)y(MO)wWherein x is more than or equal to 0.5 and less than or equal to 1, y is more than 0 and less than or equal to 0.5, M is one or more rare earth elements, and w is more than or equal to 0 and less than or equal to 0.05. The high-power ceramic chip resistor comprises a ceramic body and electrodes arranged on two surfaces of the ceramic body, wherein the ceramic body is made of the ceramic resistor material. The preparation method of the ceramic chip resistor comprises the following steps: preparing raw material powder according to a formula, then sintering the raw material powder into a spindle by keeping the temperature of the raw material powder at 1200-1400 ℃ for 2-15 hours, and then slicing, printing an electrode and sinteringAnd (5) forming electrodes and cutting to obtain a finished product. The ceramic chip resistor can meet the use requirements under high-energy density conditions such as large current, high voltage and the like, and the preparation process is simple.
Description
Technical Field
The invention relates to the technical field of resistors, in particular to a high-power ceramic chip resistor, a resistor material and preparation thereof.
Background
With the rapid development of science and technology, complex electronic devices and circuit systems usually need to operate under high energy density conditions such as large current and high voltage, and sometimes need to be applied in severe environments such as humidity and acidity, so that the conductive material is required to have stable structure and excellent performance. However, the conventional film resistors cannot meet the corresponding use requirements, for example, the conventional carbon resistors and metal resistors are used under high energy density conditions such as high current and high voltage, and are prone to open circuit and short circuit.
In order to meet the use requirements under specific conditions, enterprises hope that new materials can replace the traditional materials of the carbon-based resistor and the metal-based resistor, but do not increase the cost.
In addition, the current manufacturing method of the thick film resistor comprises the following steps: ceramic substrate is put on → back conductor printing and drying → front conductor printing and drying → sintering → resistor printing and drying → sintering → primary protector printing and drying → sintering → laser trimming → secondary protective layer printing and drying → sintering → folding strip → vacuum sputtering → drying → folding grain → screening test. The process is complex and the production cost is high.
Disclosure of Invention
Based on the ceramic resistor material, the prepared resistor can meet the use requirements under high-energy density conditions such as large current, high voltage and the like, and the preparation process is simple.
The technical scheme adopted by the invention is as follows:
a ceramic resistance material has a chemical formula of (ZnO)x(MgZnO)1-x(ZnAl2O4)y(MO)wWherein x is more than or equal to 0.5 and less than or equal to 1, y is more than 0 and less than or equal to 0.5, M is one or more rare earth elements, and w is more than or equal to 0 and less than or equal to 0.05.
Specifically, the ceramic resistance material is made of raw materials of zinc oxide, magnesium oxide, aluminum oxide and rare earth element oxide.
Specifically, the ceramic resistance material is prepared by sintering raw materials at a sintering temperature of 1200-1400 ℃ for 2-15 hours.
The invention also provides a high-power ceramic chip resistor which comprises a ceramic body and electrodes arranged on two surfaces of the ceramic body, wherein the ceramic body is made of the ceramic resistor material.
Specifically, the electrode uses a noble metal.
Specifically, the absolute value of the temperature coefficient of resistance is less than 2000 ppm.
The invention also provides a preparation method of the high-power ceramic chip resistor, which comprises the following steps: preparing raw material powder according to a formula, then preserving heat for 2-15 hours at a sintering temperature of 1200-1400 ℃, sintering the raw material powder into a spindle, and then slicing, printing an electrode, sintering the electrode and cutting to obtain a finished product.
The formula design principle of the ceramic resistance material is as follows:
1. the alumina can react with the zinc oxide to generate spinel phase ZnAl2O4，ZnAl2O4Is far higher than that of zinc oxide, and ZnAl is generated by spinel2O4The amount of alumina is too much to adjust the resistivity, and in this case, the generated spinel is aggregated at grain boundaries, which adversely affects the refined grains and decreases the stability of the resistivity.
2. Magnesium oxide can adjust the temperature coefficient of resistance, but excessive addition of magnesium oxide can cause ZnAl2O4The spinel decomposes into zinc oxide and aluminum oxide to change the resistivity, and magnesium oxide reacts with aluminum oxide to form spinel MgAl2O4Aggregation is likely to occur at the grain boundaries, and the internal pressure of zinc oxide grains cannot be affected, and adjustment of the Temperature Coefficient of Resistance (TCR) is limited.
3. The rare earth element is mainly used for improving the resistance stability, but the rare earth element can enter the interior of the crystal grain, and the excessive addition of the rare earth element can affect the internal pressure of the zinc oxide crystal grain and increase the resistance temperature coefficient.
Therefore, the ceramic chip resistor with the resistivity of 1-100 k omega-mm can be prepared by adjusting the formula and the sintering process, and the resistor with small size can be prepared. Meanwhile, the resistance temperature coefficient of the prepared ceramic chip resistor can be less than +/-2000 ppm.
Moreover, the rated power of the existing thick film and thin film resistors is relatively small, and particularly, the chip resistor with low resistance is generally less than 0.5W; tests prove that the rated power of the ceramic chip resistor prepared by the invention can reach 1W-5W.
Compared with the prior art, the chip resistor made of the ceramic resistor material designed by the invention can meet the use requirements under high-energy density conditions such as large current, high voltage and the like, greatly improves the current and voltage of a load, expands the application range, and simultaneously reduces the complexity of the preparation process and the production cost.
For a better understanding and practice, the invention is described in detail below with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic diagram of a ceramic chip resistor according to the present invention;
FIG. 2 is a flow chart of the preparation of the ceramic chip resistor of the present invention.
Detailed Description
The ceramic resistance material of the invention has a chemical general formula of (ZnO)x(MgZnO)1-x(ZnAl2O4)y(MO)wWherein x is more than or equal to 0.5 and less than or equal to 1, y is more than 0 and less than or equal to 0.5, M is one or more rare earth elements, and w is more than or equal to 0 and less than or equal to 0.05.
The rare earth elements include scandium (Sc), yttrium (Y), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu).
The ceramic resistor material is prepared by sintering raw materials of zinc oxide, magnesium oxide, aluminum oxide and rare earth element oxide at a high temperature, wherein the specific sintering condition is that the temperature is kept at 1200-1400 ℃ for 2-15 hours.
As shown in FIG. 1, the high-power ceramic chip resistor of the invention comprises a ceramic body and electrodes arranged on two opposite surfaces of the ceramic body, wherein the ceramic body is made of the ceramic resistor material.
Specifically, the high-power ceramic chip resistor has a positive temperature coefficient of resistance (TCT) of less than 2000 ppm. The electrodes may be of metal, for example aluminium.
As shown in fig. 2, the preparation method of the high-power ceramic chip resistor comprises the following steps: preparing raw material powder according to a formula, then sintering the raw material powder into a spindle by keeping the temperature of the raw material powder at 1200-1400 ℃ for 2-15 hours, and then slicing, printing an electrode, sintering the electrode and cutting to obtain a finished product.
Example 1
As shown in fig. 2, a ceramic chip resistor having a resistance R of 10 Ω was prepared as follows:
(1) according to the molar ratio (ZnO) of the formula0.99(MgZnO)0.01(ZnAl2O4)0.025(La2O3)0.006Preparing powder.
(2) And preserving the heat for 2-15 hours at the sintering temperature of 1200-1400 ℃, and sintering the powder into a spindle.
(3) Slicing, cutting the spindle into a plurality of ceramic substrates.
(4) And printing silver electrodes on both sides of the ceramic substrate and drying.
(5) And sintering the silver electrode at a high temperature to combine the silver electrode with the ceramic substrate.
(6) And putting the ceramic substrate with the silver electrode into a thermostatic bath at 25 ℃, and carrying out resistance test and cleaning, wherein the resistance test value is 7.842m omega.
(7) And calculating the size of the chip to be about 1.12mm according to a resistivity formula, and cutting the ceramic substrate with the silver electrode according to the size to obtain the single ceramic chip resistor.
(8) And testing the resistance value of the ceramic chip resistor to finish the manufacturing of the product.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.
Claims (7)
1. A ceramic resistive material, characterized by: the chemical general formula of the ceramic resistance material is (ZnO)x(MgZnO)1-x(ZnAl2O4)y(MO)wWherein x is more than or equal to 0.5 and less than or equal to 1, y is more than 0 and less than or equal to 0.5, M is one or more rare earth elements, and w is more than or equal to 0 and less than or equal to 0.05.
2. The ceramic resistive material of claim 1, wherein: is prepared from zinc oxide, magnesium oxide, aluminium oxide and rare-earth oxide.
3. The ceramic resistive material of claim 2, wherein: the material is sintered by keeping the temperature of the raw material at 1200-1400 ℃ for 2-15 hours.
4. A high-power ceramic chip resistor is characterized in that: the ceramic resistor comprises a ceramic body and electrodes arranged on two surfaces of the ceramic body, wherein the ceramic body is made of the ceramic resistor material according to any one of claims 1-3.
5. The high power ceramic chip resistor as claimed in claim 4, wherein: the electrodes are made of metal.
6. The high power ceramic chip resistor as claimed in claim 4, wherein: the absolute value of the temperature coefficient of resistance is less than 2000 ppm.
7. The method for preparing the high-power ceramic chip resistor as claimed in any one of claims 4 to 6, which comprises the following steps: preparing raw material powder according to a formula, then sintering the raw material powder into a spindle by keeping the temperature of the raw material powder at 1200-1400 ℃ for 2-15 hours, and then slicing, printing an electrode, sintering the electrode and cutting to obtain a finished product.
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Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4477793A (en) * | 1982-06-30 | 1984-10-16 | Fuji Electric Co., Ltd. | Zinc oxide non-linear resistor |
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| TWI579974B (en) * | 2015-12-25 | 2017-04-21 | 國立交通大學 | A resistive memory, resistive memory unit and thin-film transistor having composition of amorphous metal oxide |
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