CN114341400A - 前驱体源布置和原子层沉积设备 - Google Patents
前驱体源布置和原子层沉积设备 Download PDFInfo
- Publication number
- CN114341400A CN114341400A CN202080060548.9A CN202080060548A CN114341400A CN 114341400 A CN114341400 A CN 114341400A CN 202080060548 A CN202080060548 A CN 202080060548A CN 114341400 A CN114341400 A CN 114341400A
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- CN
- China
- Prior art keywords
- precursor
- container
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- support
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000002243 precursor Substances 0.000 title claims abstract description 278
- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 18
- 239000012705 liquid precursor Substances 0.000 claims abstract description 154
- 238000010438 heat treatment Methods 0.000 claims description 92
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 10
- 238000005192 partition Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011344 liquid material Substances 0.000 description 4
- 238000009834 vaporization Methods 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012712 low-vapor-pressure precursor Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20195592 | 2019-06-28 | ||
FI20195592A FI129579B (en) | 2019-06-28 | 2019-06-28 | Precursor source arrangement and atomic layer growth equipment |
PCT/FI2020/050467 WO2020260771A1 (en) | 2019-06-28 | 2020-06-26 | Precursor source arrangement and atomic layer deposition apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
CN114341400A true CN114341400A (zh) | 2022-04-12 |
Family
ID=74060022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202080060548.9A Pending CN114341400A (zh) | 2019-06-28 | 2020-06-26 | 前驱体源布置和原子层沉积设备 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220243320A1 (zh) |
CN (1) | CN114341400A (zh) |
FI (1) | FI129579B (zh) |
WO (1) | WO2020260771A1 (zh) |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6202656B1 (en) * | 1998-03-03 | 2001-03-20 | Applied Materials, Inc. | Uniform heat trace and secondary containment for delivery lines for processing system |
US20040000270A1 (en) * | 2002-06-26 | 2004-01-01 | Carpenter Craig M. | Methods and apparatus for vapor processing of micro-device workpieces |
US20040178175A1 (en) * | 2003-03-12 | 2004-09-16 | Pellin Michael J. | Atomic layer deposition for high temperature superconductor material synthesis |
US20060021573A1 (en) * | 2004-06-28 | 2006-02-02 | Cambridge Nanotech Inc. | Vapor deposition systems and methods |
CN1946488A (zh) * | 2004-03-18 | 2007-04-11 | 英国国防部 | 在大容积等离子体室中使用低功率脉冲等离子体来涂布聚合物层 |
US20100322604A1 (en) * | 2006-10-10 | 2010-12-23 | Kyle Fondurulia | Precursor delivery system |
CN102234790A (zh) * | 2010-04-19 | 2011-11-09 | Asm美国股份有限公司 | 前体传输系统 |
US20120222751A1 (en) * | 2011-03-03 | 2012-09-06 | Tokyo Electron Limited | Gas supplying apparatus, cylinder cabinet provided with the same, valve box, and substrate process apparatus |
WO2013064737A2 (en) * | 2011-11-01 | 2013-05-10 | Beneq Oy | Apparatus and method for processing substrate |
US20130216708A1 (en) * | 2012-02-20 | 2013-08-22 | Samsung Electronics Co., Ltd. | Precursor evaporators and methods of forming layers using the same |
CN107881483A (zh) * | 2016-09-30 | 2018-04-06 | Asm Ip 控股有限公司 | 反应物汽化器和相关系统与方法 |
US20190062914A1 (en) * | 2017-08-24 | 2019-02-28 | Forge Nano, Inc. | Manufacturing processes to synthesize, functionalize, surface treat and/or encapsulate powders, and applications thereof |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4487619A (en) * | 1984-03-23 | 1984-12-11 | Apache Chemicals, Inc. | Thermoelectric temperature controller for liquid chemical bubbler containers |
JPH0692558A (ja) * | 1990-09-28 | 1994-04-05 | Otis Elevator Co | 発進時の揺れ及び過剰加速を低減するエレベータの発進制御装置 |
US6998152B2 (en) * | 1999-12-20 | 2006-02-14 | Micron Technology, Inc. | Chemical vapor deposition methods utilizing ionic liquids |
US7484315B2 (en) * | 2004-11-29 | 2009-02-03 | Tokyo Electron Limited | Replaceable precursor tray for use in a multi-tray solid precursor delivery system |
US8118939B2 (en) * | 2005-03-17 | 2012-02-21 | Noah Precision, Llc | Temperature control unit for bubblers |
US8741062B2 (en) * | 2008-04-22 | 2014-06-03 | Picosun Oy | Apparatus and methods for deposition reactors |
WO2010056576A1 (en) * | 2008-11-11 | 2010-05-20 | Praxair Technology, Inc. | Reagent dispensing apparatuses and delivery methods |
FI20115073A0 (fi) * | 2011-01-26 | 2011-01-26 | Beneq Oy | Laitteisto, menetelmä ja reaktiokammio |
US9096931B2 (en) * | 2011-10-27 | 2015-08-04 | Asm America, Inc | Deposition valve assembly and method of heating the same |
US8985152B2 (en) * | 2012-06-15 | 2015-03-24 | Novellus Systems, Inc. | Point of use valve manifold for semiconductor fabrication equipment |
-
2019
- 2019-06-28 FI FI20195592A patent/FI129579B/en active IP Right Grant
-
2020
- 2020-06-26 CN CN202080060548.9A patent/CN114341400A/zh active Pending
- 2020-06-26 WO PCT/FI2020/050467 patent/WO2020260771A1/en active Application Filing
- 2020-06-26 US US17/622,357 patent/US20220243320A1/en active Pending
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6202656B1 (en) * | 1998-03-03 | 2001-03-20 | Applied Materials, Inc. | Uniform heat trace and secondary containment for delivery lines for processing system |
US20040000270A1 (en) * | 2002-06-26 | 2004-01-01 | Carpenter Craig M. | Methods and apparatus for vapor processing of micro-device workpieces |
US20040178175A1 (en) * | 2003-03-12 | 2004-09-16 | Pellin Michael J. | Atomic layer deposition for high temperature superconductor material synthesis |
CN1946488A (zh) * | 2004-03-18 | 2007-04-11 | 英国国防部 | 在大容积等离子体室中使用低功率脉冲等离子体来涂布聚合物层 |
US20060021573A1 (en) * | 2004-06-28 | 2006-02-02 | Cambridge Nanotech Inc. | Vapor deposition systems and methods |
US20100322604A1 (en) * | 2006-10-10 | 2010-12-23 | Kyle Fondurulia | Precursor delivery system |
CN102234790A (zh) * | 2010-04-19 | 2011-11-09 | Asm美国股份有限公司 | 前体传输系统 |
US20120222751A1 (en) * | 2011-03-03 | 2012-09-06 | Tokyo Electron Limited | Gas supplying apparatus, cylinder cabinet provided with the same, valve box, and substrate process apparatus |
WO2013064737A2 (en) * | 2011-11-01 | 2013-05-10 | Beneq Oy | Apparatus and method for processing substrate |
US20130216708A1 (en) * | 2012-02-20 | 2013-08-22 | Samsung Electronics Co., Ltd. | Precursor evaporators and methods of forming layers using the same |
CN107881483A (zh) * | 2016-09-30 | 2018-04-06 | Asm Ip 控股有限公司 | 反应物汽化器和相关系统与方法 |
US20190062914A1 (en) * | 2017-08-24 | 2019-02-28 | Forge Nano, Inc. | Manufacturing processes to synthesize, functionalize, surface treat and/or encapsulate powders, and applications thereof |
Also Published As
Publication number | Publication date |
---|---|
WO2020260771A1 (en) | 2020-12-30 |
FI129579B (en) | 2022-05-13 |
US20220243320A1 (en) | 2022-08-04 |
FI20195592A1 (en) | 2020-12-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: Espoo, Finland Applicant after: BENEQ Group Ltd. Address before: Espoo, Finland Applicant before: BENEQ OY |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20220825 Address after: Espoo, Finland Applicant after: BENEQ OY Address before: Espoo, Finland Applicant before: BENEQ Group Ltd. |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20230516 Address after: Room 205-5-7, 2nd Floor, East Office Building, No. 45 Beijing Road, Qianwan Bonded Port Area, Qingdao, Shandong Province, China (Shandong) Pilot Free Trade Zone (A) Applicant after: QINGDAO SIFANG SRI INTELLIGENT TECHNOLOGY Co.,Ltd. Address before: Espoo, Finland Applicant before: BENEQ OY |
|
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220412 |