CN114089144A - Method and system for measuring diode junction parameters - Google Patents
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Abstract
The invention is suitable for the technical field of semiconductor devices, and provides a method and a system for measuring diode junction parameters, wherein the method comprises the following steps: respectively applying three pulse currents to the diode to be tested, and respectively testing to obtain the forward conduction voltage of the diode to be tested under the three pulse currents; and determining junction parameters of the diode to be tested at the preset temperature according to the preset temperature, the values of the three pulse currents and the three forward conduction voltages. Wherein, the values of the three pulse currents are distributed in an arithmetic progression. The invention applies pulse current to the diode to be tested, reduces the influence of self-heating on the parameter junction parameter of the diode, simultaneously, the three pulse currents are distributed in an arithmetic series without drawing an I-V curve, and the calculation process is simplified.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a method and a system for measuring diode junction parameters.
Background
Schottky diodes are commonly used power devices in power electronics systems. The junction parameters of the diode are used for representing internal elements such as the interface state, the material and the structure of the diode, and the accurate measurement of the junction parameters is important for the application of the diode.
In the prior art, the junction parameters of the diode are usually extracted by analyzing an I-V curve of the diode, a plurality of different currents are needed, and the calculation process is complex.
Disclosure of Invention
In view of this, embodiments of the present invention provide a method and a system for measuring diode junction parameters, so as to solve the problems in the prior art that a plurality of different currents are required to extract the junction parameters of a diode by analyzing an I-V curve, and the calculation process is complicated.
A first aspect of an embodiment of the present invention provides a method for measuring diode junction parameters, including:
acquiring a first forward conduction voltage of a diode to be tested; the first forward conduction voltage is obtained by testing when a first pulse current is applied to the diode to be tested at a preset temperature;
acquiring a second forward conduction voltage of the diode to be tested; the second forward conduction voltage is obtained by testing when a second pulse current is applied to the diode to be tested at a preset temperature;
acquiring a third forward conduction voltage of the diode to be tested; the third forward conduction voltage is the forward conduction voltage of the diode to be tested obtained through testing when third pulse current is applied to the diode to be tested at the preset temperature;
determining junction parameters of the diode to be tested at the preset temperature according to the preset temperature, the value of the first pulse current, the value of the second pulse current, the value of the third pulse current, the first forward conduction voltage, the second forward conduction voltage and the third forward conduction voltage;
the values of the first pulse current, the second pulse current and the third pulse current are distributed in an arithmetic progression.
Optionally, the junction parameters of the diode to be tested include: an ideality factor;
according to the preset temperature, the value of the first pulse current, the value of the second pulse current, the value of the third pulse current, the first forward conduction voltage, the second forward conduction voltage and the third forward conduction voltage, the junction parameters of the diode to be tested at the preset temperature are determined, and the method comprises the following steps:
calculating an ideal factor n of a diode to be measured at a preset temperature through a first formula;
the first formula is:
I3-I2＝I2-I1＝ΔI
wherein, I1Is the value of the first pulse current, I2Is the value of the second pulse current, I3Is the value of the third pulse current; v1Is a first forward conduction voltage, V2Is a second forward conduction voltage, V3A third forward conduction voltage; Δ I is the current difference; t is0Is a preset temperature; q is the electron charge amount, and k is the boltzmann constant.
Optionally, the junction parameters of the diode to be tested include: a series resistor;
according to the preset temperature, the value of the first pulse current, the value of the second pulse current, the value of the third pulse current, the first forward conduction voltage, the second forward conduction voltage and the third forward conduction voltage, the junction parameters of the diode to be tested at the preset temperature are determined, and the method comprises the following steps:
calculating the series resistance R of the diode to be measured by a second formulas；
The second formula is:
I3-I2＝I2-I1＝ΔI
wherein, I1Is the value of the first pulse current, I2Is the value of the second pulse current, I3Is the value of the third pulse current; v1Is a first forward conduction voltage, V2Is a second forward conduction voltage, V3A third forward conduction voltage; Δ I is the current difference.
Optionally, the value of the second pulse current is equal to the value of the working current of the diode to be tested.
Optionally, the current difference is 100 mA.
Optionally, the first pulse current, the second pulse current, and the third pulse current are all narrow pulse currents.
Optionally, the preset temperature is multiple; the method further comprises the following steps:
and determining the temperature characteristics of the junction parameters of the diode to be tested according to the preset temperatures and the junction parameters of the diode to be tested at the preset temperatures.
A second aspect of the embodiments of the present invention provides a measurement terminal, including a memory, a processor, and a computer program stored in the memory and executable on the processor, where the processor implements the steps of the diode junction parameter measurement method provided in the first aspect of the embodiments of the present invention when executing the computer program.
A third aspect of the embodiments of the present invention provides a computer-readable storage medium, in which a computer program is stored, and the computer program, when executed by a processor, implements the steps of the diode junction parameter measurement method according to the first aspect of the embodiments of the present invention.
A fourth aspect of an embodiment of the present invention provides a measurement system, including: the device comprises a pulse current source for providing pulse current for the diode to be tested, a voltmeter for testing the forward conducting voltage of the diode to be tested, constant temperature equipment for arranging the diode to be tested and a measurement terminal provided by the second aspect of the embodiment of the invention.
The embodiment of the invention provides a method and a system for measuring diode junction parameters, wherein the method comprises the following steps: respectively obtaining a first forward conduction voltage, a second conduction voltage and a third conduction voltage of a diode to be tested at a preset temperature under a first pulse current, a second pulse current and a third pulse current; determining junction parameters of the diode to be tested at the preset temperature according to the preset temperature, the value of the first pulse current, the value of the second pulse current, the value of the third pulse current, the first forward conduction voltage, the second forward conduction voltage and the third forward conduction voltage; the values of the first pulse current, the second pulse current and the third pulse current are distributed in an arithmetic progression. According to the embodiment of the invention, three pulse currents in an arithmetic progression are applied to the diode, the junction parameters of the diode to be measured at the preset temperature are obtained through the subtraction calculation between formulas, an I-V curve does not need to be drawn, and the calculation process is simple.
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In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic flow chart illustrating an implementation of a diode junction parameter measurement method according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a diode junction parameter measuring device according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a measurement terminal provided in an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a measurement system according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Referring to fig. 1, an embodiment of the present invention provides a diode junction parameter measurement method, including:
s101: acquiring a first forward conduction voltage of a diode to be tested; the first forward conduction voltage is obtained by testing when a first pulse current is applied to the diode to be tested at a preset temperature.
S102: acquiring a second forward conduction voltage of the diode to be tested; the second forward conduction voltage is obtained by testing when a second pulse current is applied to the diode to be tested at a preset temperature;
s103: acquiring a third forward conduction voltage of the diode to be tested; and the third forward conduction voltage is the forward conduction voltage of the diode to be tested obtained by testing when the third pulse current is applied to the diode to be tested at the preset temperature.
S104: determining junction parameters of the diode to be tested according to the preset temperature, the value of the first pulse current, the value of the second pulse current, the value of the third pulse current, the first forward conduction voltage, the second forward conduction voltage and the third forward conduction voltage;
the values of the first pulse current, the second pulse current and the third pulse current are distributed in an arithmetic progression.
In the embodiment of the invention, three pulse currents in an arithmetic progression are applied to the diode to be tested through the pulse current source, three forward conduction voltages are obtained through voltmeter testing, the junction parameters of the diode to be tested can be obtained through the reduction calculation between the formulas only by applying the three currents, an I-V curve does not need to be drawn, and the calculation process is simple. Meanwhile, the current applied to the diode to be measured is pulse current, so that the influence of self-heating of the current on the junction temperature of the diode to be measured is reduced, and the measurement accuracy is improved. The diode to be tested can be arranged in the constant temperature equipment, and the preset temperature is the set temperature of the constant temperature equipment.
In some embodiments, the junction parameters of the diode under test include: an ideality factor;
s104 may include: calculating an ideal factor n of a diode to be measured at a preset temperature through a first formula;
the first formula may be:
wherein, I1Is the value of the first pulse current, I2Is the value of the second pulse current, I3Is the value of the third pulse current; v1Is a first forward conduction voltage, V2Is a second forward conduction voltage, V3A third forward conduction voltage; t is0The temperature of the diode to be measured; Δ I is the current difference; t is0Is a preset temperature; q is the electron charge amount, and k is the boltzmann constant.
The diode model is an important tool for researching the diode and the circuit characteristics comprising the diode, the simplified diode model is adopted to calculate the junction parameters of the diode to be tested in the embodiment of the invention, and the model of the diode to be tested can be as follows:
wherein V is the forward conduction voltage of the diode to be tested, I is the conduction current of the diode to be tested, IsIs the reverse saturation current of the diode to be tested, T is the junction temperature of the diode to be tested, RsThe series resistance of the diode to be tested, q is the electronic charge quantity, n is an ideal factor of the diode to be tested, and k is a Boltzmann constant.
The diode ideality factor n is used to describe the ideality of the PN junction and schottky contact, and is typically between 1 and 2, which varies from device to device. And applying three pulse currents in an arithmetic progression to the diode to be tested to obtain three forward conduction voltages. Neglecting the variation of the junction temperature of the diode to be tested, and assuming that the junction temperature of the diode to be tested is constantT0(temperature of the thermostatic equipment), the amount of electronic charge q and the boltzmann constant k are fixed values, and can be obtained by combining the diode model shown in the formula (2):
from equations (3) and (4), we can obtain:
from equations (4) and (5), we can obtain:
further, the following equations (6) and (7) can be obtained:
due to reverse saturation current IsThe current is small in relation to the pulse current,
equation (7) can be simplified as:
the calculation formula of the ideality factor n of the diode to be measured can be obtained from the formula (9):
in the embodiment of the invention, the difference values of the three pulse currents are the same, the ideal factor of the diode to be measured can be directly calculated through reduction between formulas, the whole measuring process is simple and convenient, the measuring accuracy is high, and the practical application is convenient.
In some embodiments, the junction parameters of the diode under test include: a series resistor;
s104 may include: calculating the series resistance R of the diode to be measured by a second formulas；
The second formula may be:
wherein, I1Is the value of the first pulse current, I2Is the value of the second pulse current, I3Is the value of the third pulse current; v1Is a first forward conduction voltage, V2Is a second forward conduction voltage, V3A third forward conduction voltage; t is0The temperature of the diode to be measured; Δ I is the current difference.
Referring to the calculation process of the ideality factor, in combination with the diode model shown in equation (2), it can be obtained from equation 6:
substituting the ideal factor calculated by the formula (10) into the formula (12) can obtain the series resistance RsThe calculation formula of (2):
therefore, in the embodiment of the invention, the value of the series resistance of the diode to be measured can be calculated by forming the three pulse currents with the equal difference series according to the values of the three forward conduction voltages and the second pulse current, the calculation result is simple and accurate, and the measurement is convenient, fast and easy to operate.
In some embodiments, the value of the second pulse current may be equal to the value of the operating current of the diode under test.
In the embodiment of the invention, the value of the second pulse current can be the value of the working current, and the value of the first pulse current and the value of the third pulse current are added or subtracted on the basis of the working current, so that the measurement accuracy is improved.
In some embodiments, the current difference may be 100 mA.
The current difference is set to be 100mA, which is not too large, and the measurement result is ensured to be suitable for the working current; meanwhile, the voltage variation caused by the current difference is ensured to be large enough to meet the requirement of resolution. The current difference value can also be set according to the actual application requirement.
In some embodiments, the first pulse current, the second pulse current and the third pulse current may be narrow pulse currents.
Each pulse current is a narrow pulse current, so that the self-heating of the device is reduced, and the influence of the self-heating on the junction temperature change of the diode to be measured on the measurement accuracy is avoided.
In some embodiments, the predetermined temperature is plural; the above method may further comprise:
s105: and determining the temperature characteristics of the junction parameters of the diode to be tested according to the preset temperatures and the junction parameters of the diode to be tested at the preset temperatures.
In order to keep the temperature stable, the diode to be tested can be arranged in the constant temperature equipment for a preset time, and after the temperature is constant, the steps from S101 to S103 are executed, and three forward conducting voltages are obtained through testing. And during the execution of the steps from S101 to S103, the temperature of the thermostatic equipment should be kept constant all the time to ensure that the junction temperature of the diode to be tested is constant.
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.
Corresponding to the above embodiment, referring to fig. 2, an embodiment of the present invention further provides a diode junction parameter measuring device, including:
the first parameter obtaining module 21 is configured to obtain a first forward conduction voltage of the diode to be tested; the first forward conduction voltage is obtained by testing when a first pulse current is applied to the diode to be tested at a preset temperature.
The second parameter obtaining module 22 is configured to obtain a second forward conduction voltage of the diode to be tested; the second forward conduction voltage is obtained by testing when the second pulse current is applied to the diode to be tested at the preset temperature.
The third parameter obtaining module 23 is configured to obtain a third forward conduction voltage of the diode to be detected; and the third forward conduction voltage is the forward conduction voltage of the diode to be tested obtained by testing when the third pulse current is applied to the diode to be tested at the preset temperature.
The calculation module 24 is configured to determine a junction parameter of the diode to be tested according to a preset temperature, a value of the first pulse current, a value of the second pulse current, a value of the third pulse current, the first forward conduction voltage, the second forward conduction voltage, and the third forward conduction voltage; the values of the first pulse current, the second pulse current and the third pulse current are distributed in an arithmetic progression.
In some embodiments, the junction parameters of the diode under test include: an ideality factor; the calculation module 24 may include:
the ideal factor calculation unit 241 is configured to calculate an ideal factor n of the diode to be tested at the preset temperature according to a first formula;
the first formula is:
I3-I2＝I2-I1＝ΔI
wherein, I1Is the value of the first pulse current, I2Is the value of the second pulse current, I3Is the value of the third pulse current; v1Is a first forward conduction voltage, V2Is a second forward conduction voltage, V3A third forward conduction voltage; Δ I is the current difference; t is0Is a preset temperature; q is the electron charge amount, and k is the boltzmann constant.
In some embodiments, the junction parameters of the diode under test include: a series resistor; the calculation module 24 may include:
a series resistance calculating unit 242 for calculating the series resistance R of the diode to be tested according to the second formulas；
The second formula is:
I3-I2＝I2-I1＝ΔI
wherein, I1Is the value of the first pulse current, I2Is the value of the second pulse current, I3Is the value of the third pulse current; v1Is a first forward conduction voltage, V2Is a second forward conduction voltage, V3A third forward conduction voltage; Δ I is the current difference.
In some embodiments, the value of the second pulse current may be equal to the value of the operating current of the diode under test.
In some embodiments, the current difference may be 100 mA.
In some embodiments, the first pulse current, the second pulse current and the third pulse current may be narrow pulse currents.
In some embodiments, the predetermined temperature is plural; the above apparatus may further include:
and the temperature characteristic determining module 25 is configured to determine the temperature characteristic of the junction parameter of the diode to be measured according to each preset temperature and the junction parameter of the diode to be measured at each preset temperature.
It is obvious to those skilled in the art that, for convenience and simplicity of description, the foregoing division of the functional units and modules is merely used as an example, and in practical applications, the above function distribution may be performed by different functional units and modules as needed, that is, the internal structure of the measurement terminal is divided into different functional units or modules to perform all or part of the above described functions. Each functional unit and module in the embodiments may be integrated in one processing unit, or each unit may exist alone physically, or two or more units are integrated in one unit, and the integrated unit may be implemented in a form of hardware, or in a form of software functional unit. In addition, specific names of the functional units and modules are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present application. The specific working processes of the units and modules in the above-mentioned apparatus may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
Fig. 3 is a schematic block diagram of a measurement terminal according to an embodiment of the present invention. As shown in fig. 3, the measurement terminal 4 of this embodiment includes: one or more processors 40, a memory 41, and a computer program 42 stored in the memory 41 and executable on the processors 40. The processor 40, when executing the computer program 42, implements the steps in the above-described embodiments of the diode junction parameter measurement method, such as the steps S101 to S104 shown in fig. 1. Alternatively, the processor 40, when executing the computer program 42, implements the functions of the modules/units in the above-described diode junction parameter measurement apparatus embodiments, such as the functions of the modules 21 to 24 shown in fig. 2.
Illustratively, the computer program 42 may be divided into one or more modules/units, which are stored in the memory 41 and executed by the processor 40 to accomplish the present application. One or more of the modules/units may be a series of computer program instruction segments capable of performing specific functions, which are used to describe the execution of the computer program 42 in the measurement terminal 4. For example, the computer program 42 may be divided into the first parameter acquisition module 21, the second parameter acquisition module 22, the third parameter acquisition module 23, and the calculation module 24.
The first parameter obtaining module 21 is configured to obtain a first forward conduction voltage of the diode to be tested; the first forward conduction voltage is obtained by testing when a first pulse current is applied to the diode to be tested at a preset temperature.
The second parameter obtaining module 22 is configured to obtain a second forward conduction voltage of the diode to be tested; the second forward conduction voltage is obtained by testing when the second pulse current is applied to the diode to be tested at the preset temperature.
The third parameter obtaining module 23 is configured to obtain a third forward conduction voltage of the diode to be detected; and the third forward conduction voltage is the forward conduction voltage of the diode to be tested obtained by testing when the third pulse current is applied to the diode to be tested at the preset temperature.
The calculation module 24 is configured to determine a junction parameter of the diode to be tested according to a preset temperature, a value of the first pulse current, a value of the second pulse current, a value of the third pulse current, the first forward conduction voltage, the second forward conduction voltage, and the third forward conduction voltage; the values of the first pulse current, the second pulse current and the third pulse current are distributed in an arithmetic progression.
Other modules or units are not described in detail herein.
The measurement terminal 4 includes, but is not limited to, a processor 40, a memory 41. Those skilled in the art will appreciate that fig. 3 is only one example of a measurement terminal and does not constitute a limitation of the measurement terminal 4 and may include more or less components than those shown, or combine certain components, or different components, e.g., the measurement terminal 4 may also include input devices, output devices, network access devices, buses, etc.
The Processor 40 may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic device, discrete hardware component, etc. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
The memory 41 may be an internal storage unit of the measurement terminal, such as a hard disk or a memory of the measurement terminal. The memory 41 may also be an external storage device of the measurement terminal, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), and the like provided on the measurement terminal. Further, the memory 41 may also include both an internal storage unit of the measurement terminal and an external storage device. The memory 41 is used for storing a computer program 42 and other programs and data required by the measuring terminal. The memory 41 may also be used to temporarily store data that has been output or is to be output.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
In the embodiments provided in the present application, it should be understood that the disclosed measurement terminal and method may be implemented in other ways. For example, the above-described embodiments of the measurement terminal are merely illustrative, and for example, a module or a unit may be divided into only one logic function, and may be implemented in other ways, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
Units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present application may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The integrated modules/units, if implemented in the form of software functional units and sold or used as separate products, may be stored in a computer readable storage medium. Based on such understanding, all or part of the flow in the method according to the embodiments described above may be implemented by a computer program, which is stored in a computer readable storage medium and used by a processor to implement the steps of the embodiments of the methods described above. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer readable medium may include: any entity or device capable of carrying computer program code, recording medium, usb disk, removable hard disk, magnetic disk, optical disk, computer Memory, Read-Only Memory (ROM), Random Access Memory (RAM), electrical carrier wave signals, telecommunications signals, software distribution medium, and the like. It should be noted that the computer readable medium may include any suitable increase or decrease as required by legislation and patent practice in the jurisdiction, for example, in some jurisdictions, computer readable media may not include electrical carrier signals and telecommunications signals in accordance with legislation and patent practice.
Referring to fig. 4, an embodiment of the present invention further provides a diode junction parameter measurement system, including:
the device comprises a pulse current source 2 for providing pulse current for the diode 1 to be tested, a voltmeter 3 for testing the forward conduction voltage of the diode 1 to be tested, a constant temperature device 5 for arranging the diode 1 to be tested and a measurement terminal 4 provided in the embodiment.
The pulse current source 2 provides a first pulse current, a second pulse current and a third pulse current for the diode 1 to be tested, and the voltmeter 3 detects a first forward conduction voltage of the diode to be tested under the first pulse current, a second forward conduction voltage under the second pulse current and a third conduction voltage under the third pulse current.
The terminal device 5 can be directly connected with the pulse current source 2 and the voltmeter 3, controls the pulse current source 2 to output three pulse currents, and automatically obtains the forward conducting voltage detected by the voltmeter 3. Or the user operates the pulse current source to output three pulse currents, and the user reads the voltage values corresponding to the three pulse currents displayed on the voltmeter 3 and inputs the voltage values into the terminal device 4.
In some embodiments, the voltmeter may be a pulse voltmeter, the acquisition frequency is high, and the forward conduction voltage of the diode 1 to be measured can be obtained by synchronous measurement when the pulse current is applied to the diode 1 to be measured.
The thermostatic device 5 can be a cold and hot platform with constant temperature, and the diode 1 to be tested is arranged on the cold and hot platform.
The above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present application and are intended to be included within the scope of the present application.
Claims (10)
1. A diode junction parameter measurement method is characterized by comprising the following steps:
acquiring a first forward conduction voltage of a diode to be tested; the first forward conduction voltage is obtained by testing when a first pulse current is applied to the diode to be tested at a preset temperature;
acquiring a second forward conduction voltage of the diode to be tested; the second forward conduction voltage is obtained by testing when a second pulse current is applied to the diode to be tested at the preset temperature;
acquiring a third forward conduction voltage of the diode to be tested; the third forward conduction voltage is obtained by testing when a third pulse current is applied to the diode to be tested at the preset temperature;
determining junction parameters of the diode to be tested at the preset temperature according to the preset temperature, the value of the first pulse current, the value of the second pulse current, the value of the third pulse current, the first forward conduction voltage, the second forward conduction voltage and the third forward conduction voltage;
wherein the values of the first pulse current, the second pulse current and the third pulse current are distributed in an arithmetic progression.
2. The diode junction parameter measuring method of claim 1, wherein the junction parameter of the diode under test comprises: an ideality factor;
determining junction parameters of the diode to be tested at the preset temperature according to the preset temperature, the value of the first pulse current, the value of the second pulse current, the value of the third pulse current, the first forward conduction voltage, the second forward conduction voltage and the third forward conduction voltage, and including:
calculating an ideal factor n of the diode to be tested at the preset temperature through a first formula;
the first formula is:
I3-I2＝I2-I1＝ΔI
wherein, I1Is the value of the first pulse current, I2Is the value of the second pulse current, I3Is the value of the third pulse current; v1Is the first forward conduction voltage, V2Is the second forward conduction voltage, V3Is the third forward conduction voltage; Δ I is the current difference; t is0The preset temperature is set; q is the electron charge amount, and k is the boltzmann constant.
3. The diode junction parameter measuring method of claim 1, wherein the junction parameter of the diode under test comprises: a series resistor;
determining junction parameters of the diode to be tested at the preset temperature according to the preset temperature, the value of the first pulse current, the value of the second pulse current, the value of the third pulse current, the first forward conduction voltage, the second forward conduction voltage and the third forward conduction voltage, and including:
calculating the series resistance R of the diode to be tested according to a second formulas；
The second formula is:
I3-I2＝I2-I1＝ΔI
wherein, I1Is the value of the first pulse current, I2Is the value of the second pulse current, I3Is the value of the third pulse current; v1Is the first forward conduction voltage, V2Is the second forward conduction voltage, V3Is the third forward conduction voltage; Δ I is the current difference.
4. A diode junction parameter measuring method according to claim 2 or 3, wherein the value of the second pulse current is equal to the value of the operating current of the diode under test.
5. A method for measuring diode junction parameters according to claim 2 or 3, characterized in that the current difference is 100 mA.
6. The method of claim 1, wherein the first pulse current, the second pulse current, and the third pulse current are narrow pulse currents.
7. The diode junction parameter measuring method of claim 1, wherein the predetermined temperature is plural; the method further comprises the following steps:
and determining the temperature characteristic of the junction parameter of the diode to be tested according to each preset temperature and the junction parameter of the diode to be tested at each preset temperature.
8. A measurement terminal comprising a memory, a processor and a computer program stored in said memory and executable on said processor, characterized in that said processor, when executing said computer program, carries out the steps of the diode junction parameter measurement method according to any of claims 1 to 7.
9. A computer-readable storage medium, in which a computer program is stored which, when being executed by a processor, carries out the steps of the diode junction parameter measurement method according to any one of claims 1 to 7.
10. A measurement system, characterized in that the system comprises: a pulse current source for providing a pulse current for a diode to be tested, a voltmeter for testing a forward conduction voltage of the diode to be tested, a thermostat device for arranging the diode to be tested, and the measurement terminal of claim 8.
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