CN114038796A - Contact hole manufacturing method and contact hole connecting structure - Google Patents
Contact hole manufacturing method and contact hole connecting structure Download PDFInfo
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- CN114038796A CN114038796A CN202111252524.6A CN202111252524A CN114038796A CN 114038796 A CN114038796 A CN 114038796A CN 202111252524 A CN202111252524 A CN 202111252524A CN 114038796 A CN114038796 A CN 114038796A
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- Prior art keywords
- contact hole
- connecting layer
- resistance connecting
- width
- vertical direction
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 15
- 229920005591 polysilicon Polymers 0.000 claims abstract description 9
- 238000012938 design process Methods 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a contact hole manufacturing method, which comprises the following steps: forming polysilicon, an active region and a high-resistance connecting layer according to a design process; forming a contact hole on the polycrystalline silicon, the active region and the high-resistance connecting layer, wherein the width of the bottom of the section of the contact hole in the vertical direction is smaller than the width of the top and the bottom of the contact hole; the width of the bottom of the contact hole is the designed width. The invention also provides a contact hole connecting structure. According to the invention, by changing the structures of the contact hole and the high-resistance connecting layer, on the premise of not changing the process, the contact hole of the high-resistance connecting layer can be prevented from being deviated while the contact hole of the polycrystalline silicon and the active region is aligned, so that the contact hole is aligned with the high-resistance connecting layer, the design requirement is met, and the performance of the device is improved.
Description
Technical Field
The invention relates to the field of integrated circuit manufacturing, in particular to a contact hole manufacturing method. The invention also relates to a contact hole connecting structure.
Background
As the fabrication of integrated circuits advances to ultra large scale integrated circuits (ULSI), the minimum line width for designing and fabricating integrated circuits continues to shrink, the internal circuit density increases, and the number of components involved increases, so that the surface of the wafer cannot provide enough area to fabricate the required interconnections. Therefore, in order to meet the increased interconnection requirements of the shrinking devices, the design of two or more layers of metal interconnections is a necessary method for very large scale integrated circuit technology.
At present, the conduction between different metal layers is realized by forming a Contact Hole (CT) structure for conducting two metal layers by digging an opening in an insulating layer between two metal layers and filling a conductive material. The contact hole process leads out electrodes of various devices on the silicon wafer to the dielectric layer, and leads out the electrodes of the integrated circuit by utilizing multilayer metal interconnection so as to facilitate subsequent packaging. The quality of the contact hole structure greatly affects the performance of the circuit, and if the quality of the contact hole is poor, the overall resistance value of the circuit is increased, and the device cannot work normally in serious conditions. Under the 22nm process, it is difficult to simultaneously and accurately align the polysilicon, the active region and the high resistance connection layer (Hi-R) when manufacturing the contact hole, and under the condition that the polysilicon and the active region are aligned, the contact hole connecting the high resistance connection layer (Hi-R) is deviated, as shown in fig. 1.
Disclosure of Invention
In this summary, a series of simplified form concepts are introduced that are simplifications of the prior art in this field, which will be described in further detail in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The invention aims to provide a contact hole manufacturing method which is used for technical nodes of 22nm and below and can simultaneously and accurately align polysilicon, an active region and a high-resistance connecting layer by changing the structure on the premise of not changing the process.
And a contact hole connection structure manufactured by the contact hole manufacturing method.
In order to solve the technical problem, the contact hole manufacturing method provided by the invention comprises the following steps:
s1, forming polysilicon, an active region and a high-resistance connecting layer according to a design process;
s2, forming a contact hole on the polycrystalline silicon, the active region and the high-resistance connecting layer, wherein the bottom width of the section of the contact hole in the vertical direction is smaller than the top and bottom width of the contact hole;
wherein, the width of the bottom of the contact hole is the design width.
Optionally, the contact hole manufacturing method is further improved, and the contact hole is formed into an inverted trapezoid in the vertical direction section of the device.
Optionally, the contact hole manufacturing method is further improved, and the width of the high-resistance connecting layer between the adjacent contact holes in the vertical direction of the device is smaller than that of the high-resistance connecting layer below the contact holes.
Optionally, the contact hole manufacturing method is further improved, and the high-resistance connecting layer between adjacent contact holes in the vertical direction of the device is formed into a dumbbell shape in a top view angle.
Optionally, the contact hole making method is further improved, and the contact hole can be made through a focused ion beam.
Optionally, the contact hole manufacturing method is further improved, and the high-resistance connecting layer is a titanium nitride layer.
In order to solve the above technical problem, the present invention provides a contact hole connection structure, including:
a high resistance connection layer for connecting the contact holes;
and a contact hole for connecting different metal layers, which is formed in an inverted trapezoidal shape in a section in a vertical direction of the device.
Optionally, the contact hole connection structure is further improved, and the width of the high-resistance connection layer between adjacent contact holes in the vertical direction of the device is smaller than that of the high-resistance connection layer below the contact holes.
Optionally, the contact hole connection structure is further improved, and the high-resistance connection layer between adjacent contact holes in the vertical direction of the device is formed into a dumbbell shape in a top view angle.
Optionally, the contact hole connection structure is further improved, and the high-resistance connection layer is a titanium nitride layer.
According to the invention, by changing the structures of the contact hole and the high-resistance connecting layer (refer to fig. 1, fig. 2, fig. 4 and fig. 5), on the premise of not changing the process, the contact hole of the high-resistance connecting layer can be prevented from being deviated while the contact hole of the polycrystalline silicon and the contact hole of the active area are aligned, so that the contact hole is aligned with the high-resistance connecting layer, the design requirement is met, and the performance of the device is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention, are incorporated in and constitute a part of this specification. The drawings are not necessarily to scale, however, and may not be intended to accurately reflect the precise structural or performance characteristics of any given embodiment, and should not be construed as limiting or restricting the scope of values or properties encompassed by exemplary embodiments in accordance with the invention. The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
FIG. 1 is a schematic diagram illustrating the occurrence of misalignment between a contact hole and a high-resistance connection layer in the prior art.
FIG. 2 is a schematic top view of a contact hole and a high resistance connection layer in the prior art.
FIG. 3 is a schematic flow chart of the present invention.
Fig. 4 is a first structural diagram of the present invention.
FIG. 5 is a second schematic structural diagram of the present invention.
Description of the reference numerals
1 is a contact hole
And 2 is a high resistance connection layer.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and technical effects of the present invention will be fully apparent to those skilled in the art from the disclosure in the specification. The invention is capable of other embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the general spirit of the invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. The following exemplary embodiments of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the technical solutions of these exemplary embodiments to those skilled in the art. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present. Like reference numerals refer to like elements throughout the drawings.
A first embodiment;
as shown in fig. 3, the present invention provides a method for forming a contact hole, comprising the following steps:
s1, forming polysilicon, an active region and a high-resistance connecting layer according to a design process;
s2, forming a contact hole on the polycrystalline silicon, the active region and the high-resistance connecting layer, wherein the bottom width of the section of the contact hole in the vertical direction is smaller than the top and bottom width of the contact hole;
wherein, the width of the bottom of the contact hole is the design width.
A second embodiment;
with continued reference to fig. 3, the present invention provides a method for forming a contact hole, comprising the steps of:
s1, forming polysilicon, an active region and a high-resistance connecting layer according to a design process;
s2, forming a contact hole on the polycrystalline silicon, the active region and the high-resistance connecting layer, wherein the bottom width of the section of the contact hole in the vertical direction is smaller than the top and bottom width of the contact hole to form an inverted trapezoid;
wherein, the width of the bottom of the contact hole is the design width.
A third embodiment;
the invention provides a contact hole manufacturing method, which comprises the following steps:
s1, forming polysilicon, an active region and a high-resistance connecting layer according to a design process, wherein the width of the high-resistance connecting layer between adjacent contact holes in the vertical direction of the device is smaller than that of the high-resistance connecting layer below the contact holes;
s2, forming a contact hole on the polycrystalline silicon, the active region and the high-resistance connecting layer, wherein the bottom width of the section of the contact hole in the vertical direction is smaller than the top and bottom width of the contact hole to form an inverted trapezoid;
wherein, the width of the bottom of the contact hole is the design width.
A fourth embodiment;
with continuing reference to fig. 3 in conjunction with fig. 4 and 5, the present invention provides a method for forming a contact hole, comprising the following steps:
s1, forming polycrystalline silicon, an active region and a high-resistance connecting layer according to a design process, wherein the high-resistance connecting layer between adjacent contact holes in the vertical direction of the device is formed into a dumbbell shape in a top view angle;
s2, forming a contact hole on the polycrystalline silicon, the active region and the high-resistance connecting layer, wherein the bottom width of the section of the contact hole in the vertical direction is smaller than the top and bottom width of the contact hole to form an inverted trapezoid;
wherein, the width of the bottom of the contact hole is the design width.
The contact hole according to any one of the first to fourth embodiments may be formed by a focused ion beam, and the high-resistance connection layer may be a titanium nitride layer.
A fifth embodiment;
as shown in fig. 4, the present invention provides a contact hole connection structure, comprising:
a high resistance connection layer for connecting the contact holes;
and a contact hole for connecting different metal layers, which is formed in an inverted trapezoidal shape in a section in a vertical direction of the device.
A sixth embodiment;
the invention provides a contact hole connection structure, comprising:
the high-resistance connecting layer is used for connecting the contact holes, and the width of the high-resistance connecting layer between the adjacent contact holes in the vertical direction of the device is smaller than that of the high-resistance connecting layer below the contact holes;
and a contact hole for connecting different metal layers, which is formed in an inverted trapezoidal shape in a section in a vertical direction of the device.
A seventh embodiment;
with continuing reference to FIG. 4 in conjunction with FIG. 5, the present invention provides a contact hole connection structure, comprising:
the high-resistance connecting layer is used for connecting the contact holes, and the high-resistance connecting layer between the adjacent contact holes in the vertical direction of the device is formed into a dumbbell shape in a top view angle;
and a contact hole for connecting different metal layers, which is formed in an inverted trapezoidal shape in a section in a vertical direction of the device.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The present invention has been described in detail with reference to the specific embodiments and examples, but these are not intended to limit the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (10)
1. A contact hole manufacturing method is characterized by comprising the following steps:
s1, forming polysilicon, an active region and a high-resistance connecting layer according to a design process;
s2, forming a contact hole on the polycrystalline silicon, the active region and the high-resistance connecting layer, wherein the bottom width of the section of the contact hole in the vertical direction is smaller than the top and bottom width of the contact hole;
wherein, the width of the bottom of the contact hole is the design width.
2. The method for forming a contact hole according to claim 1, wherein: the contact hole is formed in an inverted trapezoid shape in the vertical direction of the device.
3. The method for forming a contact hole according to claim 1, wherein: the width of the high-resistance connecting layer between the adjacent contact holes in the vertical direction of the device is smaller than that of the high-resistance connecting layer below the contact holes.
4. The method for forming a contact hole according to claim 1, wherein: the high-resistance connecting layer between the adjacent contact holes in the vertical direction of the device is formed into a dumbbell shape in a top view angle.
5. The method for forming a contact hole according to claim 1, wherein: the contact hole can be made by a focused ion beam.
6. The method for forming a contact hole according to claim 1, wherein: the high-resistance connecting layer is a titanium nitride layer.
7. A contact hole connection structure, comprising:
a high resistance connection layer for connecting the contact holes;
and a contact hole for connecting different metal layers, which is formed in an inverted trapezoidal shape in a section in a vertical direction of the device.
8. The contact hole connection structure of claim 6, wherein: the width of the high-resistance connecting layer between the adjacent contact holes in the vertical direction of the device is smaller than that of the high-resistance connecting layer below the contact holes.
9. The contact hole connection structure of claim 6, wherein: the high-resistance connecting layer between the adjacent contact holes in the vertical direction of the device is formed into a dumbbell shape in a top view angle.
10. The contact hole connection structure of claim 6, wherein: the high-resistance connecting layer is a titanium nitride layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111252524.6A CN114038796A (en) | 2021-10-27 | 2021-10-27 | Contact hole manufacturing method and contact hole connecting structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111252524.6A CN114038796A (en) | 2021-10-27 | 2021-10-27 | Contact hole manufacturing method and contact hole connecting structure |
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| Publication Number | Publication Date |
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| CN114038796A true CN114038796A (en) | 2022-02-11 |
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| CN202111252524.6A Pending CN114038796A (en) | 2021-10-27 | 2021-10-27 | Contact hole manufacturing method and contact hole connecting structure |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200901391A (en) * | 2007-02-05 | 2009-01-01 | Toshiba Kk | Non-volatile semiconductor memory device and method of making the same |
| CN103050433A (en) * | 2011-10-17 | 2013-04-17 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor contact hole structure and manufacturing method thereof |
| CN107680972A (en) * | 2017-11-01 | 2018-02-09 | 长江存储科技有限责任公司 | A kind of 3D nand memories part and its manufacture method |
| CN108695185A (en) * | 2018-05-18 | 2018-10-23 | 上海华虹宏力半导体制造有限公司 | The method for detecting alignment offset |
| CN109994424A (en) * | 2019-03-26 | 2019-07-09 | 上海华力集成电路制造有限公司 | Forming method for titanium nitride film in the contact hole structure of 28 nanometers and following technology node |
-
2021
- 2021-10-27 CN CN202111252524.6A patent/CN114038796A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200901391A (en) * | 2007-02-05 | 2009-01-01 | Toshiba Kk | Non-volatile semiconductor memory device and method of making the same |
| CN103050433A (en) * | 2011-10-17 | 2013-04-17 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor contact hole structure and manufacturing method thereof |
| CN107680972A (en) * | 2017-11-01 | 2018-02-09 | 长江存储科技有限责任公司 | A kind of 3D nand memories part and its manufacture method |
| CN108695185A (en) * | 2018-05-18 | 2018-10-23 | 上海华虹宏力半导体制造有限公司 | The method for detecting alignment offset |
| CN109994424A (en) * | 2019-03-26 | 2019-07-09 | 上海华力集成电路制造有限公司 | Forming method for titanium nitride film in the contact hole structure of 28 nanometers and following technology node |
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