CN114006139B - HTCC-based ultra-wideband millimeter wave vertical interconnection structure - Google Patents
HTCC-based ultra-wideband millimeter wave vertical interconnection structure Download PDFInfo
- Publication number
- CN114006139B CN114006139B CN202111233025.2A CN202111233025A CN114006139B CN 114006139 B CN114006139 B CN 114006139B CN 202111233025 A CN202111233025 A CN 202111233025A CN 114006139 B CN114006139 B CN 114006139B
- Authority
- CN
- China
- Prior art keywords
- conductor
- htcc
- strip line
- central conductor
- htcc substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6616—Vertical connections, e.g. vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Waveguides (AREA)
Abstract
The invention provides an ultra-wideband millimeter wave vertical interconnection structure based on HTCC (hyper text transport communication), and belongs to the technical field of radio frequency interconnection. The PCB comprises an HTCC substrate and a PCB motherboard; and a transmission substructure formed by a first coplanar waveguide, a first coaxial line, a first strip line, a second coaxial line, a second strip line and a second coplanar waveguide is sequentially connected in series on the HTCC substrate and the PCB motherboard. The invention provides an ultra-wideband millimeter wave vertical interconnection structure based on a mature HTCC process technology for SIP adopting HTCC as a substrate material, and the radio frequency vertical interconnection structure realizes excellent electrical characteristics of high working frequency, wide working frequency band, low insertion loss and the like, and meets the characteristics of easy processing, high reliability and the like.
Description
Technical Field
The invention belongs to the technical field of radio frequency interconnection, and particularly relates to an ultra-wideband millimeter wave vertical interconnection structure based on HTCC.
Background
In the post-morgan era, advanced semiconductor chip technology has approached physical limits, and System In Package (SiP) is an important implementation path beyond morgan's law. The SiP is a single standard package that realizes a certain function by preferentially assembling a plurality of active electronic components having different functions, optional passive devices, and other devices such as micro-electromechanical devices or optical devices, in a side-by-side or stacked packaging manner for different chips from the standpoint of packaging.
SIP is generally composed of a substrate, a metal frame, a sealing cover plate, and internal circuits (composed of various device interconnections), and is generally used by soldering pads on the bottom surface of the substrate to a PCB motherboard. High Temperature Co-fired Ceramic (HTCC) is widely used as a substrate material for SiP because of its superior High frequency electrical characteristics, multilayer structure, High young's modulus (not easy to deform), High air-tightness, High rigidity maintained under Temperature variation, and other characteristics.
The HTCC substrate is generally in a multilayer structure formed by mutually overlapping a tungsten conductor layer and a ceramic dielectric layer, and the two tungsten conductor layers are interconnected through a vertical tungsten column; the PCB motherboard generally has a multi-layer structure formed by overlapping copper conductor layers and organic dielectric layers, and the two copper conductor layers are interconnected through vertical metal vias. A proper vertical interconnection structure can be obtained by reasonably designing the tungsten conductor layer pattern and the vertical tungsten column between the tungsten conductor layers in each layer of the HTCC substrate and the vertical metal through hole between the copper conductor layer pattern and the copper conductor layer in each layer of the PCB motherboard, and the vertical interconnection structure is used for completing the transmission of radio frequency signals from the SiP internal circuit to the PCB motherboard. With the increase of signal frequency and the broadening of signal bandwidth, the discontinuity of the transmission of radio frequency signals in a vertical interconnection structure becomes a bottleneck restricting the application of the SiP in the fields of ultra-high frequency and ultra-wide band. On the basis of the current mainstream HTCC process level, it is the key of the problem to realize a vertical interconnection structure with higher frequency, wider bandwidth and lower insertion loss as much as possible.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides the ultra-wideband millimeter wave vertical interconnection structure based on the HTCC, and provides the ultra-wideband millimeter wave vertical interconnection structure based on the mature HTCC process technology for the SIP adopting the HTCC as the substrate material.
In order to achieve the above purpose, the invention adopts the technical scheme that:
this scheme provides a perpendicular interconnection structure of ultra wide band millimeter wave based on HTCC, includes: the PCB motherboard comprises an HTCC substrate, a PCB motherboard grounding plane, an HTCC substrate top layer circuit, an HTCC substrate upper medium layer circuit, an HTCC substrate middle layer circuit, an HTCC substrate lower medium layer and an HTCC substrate bottom layer circuit, which are sequentially arranged from top to bottom, and the PCB motherboard, which is sequentially provided with a PCB motherboard top layer circuit and a PCB motherboard grounding plane from top to bottom;
and the HTCC substrate and the PCB mother board are sequentially connected in series with a transmission substructure formed by a first coplanar waveguide, a first coaxial line, a first strip line, a second coaxial line, a second strip line and a second coplanar waveguide.
The invention has the beneficial effects that: the invention obtains the vertical interconnection structure by reasonably designing the patterns of each layer of tungsten conductor layer in the HTCC substrate, the vertical tungsten columns among the tungsten conductor layers and the vertical metal through holes among the patterns of each layer of copper conductor layer and the copper conductor layers in the PCB motherboard: a transmission substructure is formed from an SIP internal circuit to a PCB motherboard, wherein the transmission substructure comprises six transmission lines with 50 omega characteristic impedances, namely a first coplanar waveguide, a first coaxial line, a first strip line, a second coaxial line, a second strip line and a second coplanar waveguide, which are connected in series in sequence, a high-low impedance matching structure is used between the first coplanar waveguide and the first coaxial line, between the first coaxial line and the first strip line, between the first strip line and the second coaxial line, a direct connection matching structure is used between the second coaxial line and the second strip line for reducing the manufacturing difficulty, and a width gradient matching structure is used between the second strip line and the second coplanar waveguide. The invention realizes the ultra-wideband millimeter wave radio frequency vertical interconnection with the 2 GHz-40 GHz full-band insertion loss not more than 0.36dB, has the excellent electrical characteristics of ultrahigh working frequency, ultra-wide working frequency band, ultra-low insertion loss and the like, and simultaneously has the advantages of easy processing, high reliability, good consistency, strong derivation and suitability for batch production.
Furthermore, the first coplanar waveguide and the first coaxial cascade are matched through a first high-low impedance matching substructure, the first coaxial cascade and the first stripline are matched through a second high-low impedance matching substructure, the first stripline and the second coaxial cascade are matched through a third high-low impedance matching substructure, the second coaxial cascade and the second stripline are matched through a direct matching substructure, and the second stripline and the second coplanar waveguide are matched through a width gradient matching substructure.
The beneficial effects of the further scheme are as follows: the ultra-wideband and low-reflection interconnection of six transmission substructures sequentially connected in series on the HTCC substrate and the PCB motherboard is realized on the basis of ensuring the manufacturability and reliability of the HTCC substrate and the PCB motherboard.
Still further, the center conductor of the first coplanar waveguide is located on the top level circuit of the HTCC substrate; the outer conductor of the first coplanar waveguide comprises: tungsten conductor surfaces positioned on two sides of a central conductor of the first coplanar waveguide on a top layer circuit of the HTCC substrate, tungsten conductor surfaces positioned below the central conductor of the first coplanar waveguide on an intermediate layer circuit of the HTCC substrate, and vertical tungsten columns positioned on two sides of the central conductor of the first coplanar waveguide and connected with the two tungsten conductor surfaces on a dielectric layer on the HTCC substrate;
the first coaxial central conductor is a vertical tungsten column with coordinates of (0, L2+ 2L 3) in a dielectric layer on the HTCC substrate; the first coaxial outer conductor comprises: 4 vertical tungsten columns of +/-L3 are arranged on the dielectric layer on the HTCC substrate and are away from the first coaxial central conductor in the Y direction; wherein L2 represents the spacing of the HTCC substrate shield vertical tungsten pillars in the Y-direction, and L3 represents the spacing of the first-type coaxial shield vertical tungsten pillars from the first-type coaxial center conductor in the Y-direction;
the first high-low impedance matching sub-structure is located on top circuitry of the HTCC substrate, the first high-low impedance matching sub-structure connecting the first coplanar waveguide and the first coaxial center conductor.
The beneficial effects of the further scheme are as follows: and carrying out ultra-wideband matching on the first coplanar waveguide and the first coaxial at the interconnection position of the central conductors thereof by adopting a proper high-low impedance matching mode, so as to realize the ultra-wideband radio frequency interconnection of the first coplanar waveguide and the first coaxial.
Still further, the center conductor of the first strip line is located on the HTCC substrate intermediate layer circuit; the outer conductor of the first strip line includes: the tungsten conductor plane is positioned above the central conductor of the first strip line on the top layer circuit of the HTCC substrate, the tungsten conductor planes are positioned on two sides of the central conductor of the first strip line on the middle layer circuit of the HTCC substrate, the tungsten conductor plane is positioned below the central conductor of the first strip line on the bottom layer circuit of the HTCC substrate, and the vertical tungsten columns are positioned on two sides of the central conductor of the first strip line in the upper medium layer of the HTCC substrate and the lower medium layer of the HTCC substrate and are connected with the three tungsten conductor planes;
the second high-low impedance matching sub-structure is located on the HTCC substrate intermediate layer circuitry, the second high-low impedance matching sub-structure connecting the first type of coaxial and the center conductor of the first stripline.
The beneficial effects of the further scheme are as follows: and ultra-wideband matching is carried out on the first coaxial line and the first strip line at the interconnection position of the central conductors thereof by adopting a proper high-low impedance matching mode, so that ultra-wideband radio frequency interconnection of the first coaxial line and the first strip line is realized.
Still further, the second coaxial central conductor is a vertical tungsten column with coordinates (0, 0) in a dielectric layer under the HTCC substrate; the second type of coaxial outer conductor comprises: 4 vertical tungsten columns of +/-L3 are arranged in the Y direction of a dielectric layer under the HTCC substrate and away from a second coaxial central conductor, wherein L3 represents the distance between the second coaxial shielding vertical tungsten columns and the second coaxial central conductor in the Y direction;
the third high and low impedance match sub-structure is located on the HTCC substrate interlayer circuitry, the third high and low impedance match sub-structure connecting the first stripline and the second coaxial-like center conductor.
The beneficial effects of the further scheme are as follows: and carrying out ultra-wideband matching on the first strip line and the second coaxial at the interconnection position of the central conductors thereof by adopting a proper high-low impedance matching mode, so as to realize the ultra-wideband radio frequency interconnection of the first strip line and the second coaxial.
Furthermore, the central conductor of the second strip line is a community formed by soldering a pad on a bottom circuit of the HTCC substrate and a pad on a top circuit of the PCB motherboard; the outer conductor of the second strip line includes: a tungsten conductor surface positioned above the central conductor of the second strip line on the HTCC substrate top layer circuit, a common body formed by soldering tungsten conductor surfaces positioned at two sides of the central conductor of the second strip line on the HTCC substrate bottom layer circuit and copper conductor surfaces positioned at two sides of the central conductor of the second strip line on the PCB motherboard top layer circuit, a copper conductor surface positioned below the central conductor of the second strip line on the PCB motherboard ground plane and the HTCC substrate;
the direct match sub-structure is located on the HTCC substrate underlying circuitry, the direct match sub-structure connecting the second type of coaxial and the center conductor of the second stripline.
The beneficial effects of the further scheme are as follows: and matching the second coaxial line and the second strip line at the interconnection position of the central conductors by adopting a direct matching mode with fixed line width, and realizing the ultra-wideband radio frequency interconnection of the second coaxial line and the second strip line while ensuring the welding reliability between the HTCC substrate and the PCB motherboard.
Still further, the central conductor of the second coplanar waveguide is positioned on a top circuit of a motherboard of the PCB; the outer conductor of the second coplanar waveguide comprises: copper conductor surfaces on a top circuit of the PCB motherboard on two sides of the central conductor of the second coplanar waveguide, a copper conductor surface on a ground plane of the PCB motherboard below the central conductor of the second coplanar waveguide, and vertical metal through holes in the PCB motherboard on two sides of the central conductor of the second coplanar waveguide and connected with the two copper conductor surfaces;
the width gradually-changing matching sub-structure is located on a top layer circuit of the PCB motherboard and connected with the second strip line and a central conductor of the second coplanar waveguide.
The beneficial effects of the further scheme are as follows: and carrying out ultra-wideband matching on the second strip line and the second coplanar waveguide at the interconnection position of the central conductors thereof by adopting a proper width gradual change matching mode, so as to realize ultra-wideband radio frequency interconnection of the second strip line and the second coplanar waveguide.
Drawings
FIG. 1 is a schematic diagram of a three-dimensional model of the present invention.
Fig. 2 is a cross-sectional view of the YOZ plane in fig. 1.
Fig. 3 is a top-level circuit diagram of the HTCC substrate of the present embodiment.
Fig. 4 is a diagram of a dielectric layer on the HTCC substrate in this example.
Fig. 5 is a circuit diagram of an intermediate layer of the HTCC substrate of the present embodiment.
Fig. 6 is a diagram of a dielectric layer under the HTCC substrate in this embodiment.
Fig. 7 is a circuit diagram of the bottom layer of the HTCC substrate in this embodiment.
Fig. 8 is a top circuit diagram of the motherboard of the PCB in this embodiment.
Fig. 9 is a graph of return loss and frequency for the present invention.
Fig. 10 is a graph of insertion loss and frequency for the present invention.
The waveguide structure comprises 1-a first coplanar waveguide, 2-a first high-low impedance matching substructure, 3-a first coaxial class, 4-a second high-low impedance matching substructure, 5-a first strip line, 6-a third high-low impedance matching substructure, 7-a second coaxial class, 8-a direct matching substructure, 9-a second strip line, 10-a width gradient matching substructure and 11-a second coplanar waveguide.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined by the appended claims, and all changes that can be made by the invention using the inventive concept are intended to be protected.
Example 1
The invention discloses an ultra-wideband millimeter wave vertical interconnection structure based on HTCC, which is shown in figure 1, wherein a cross-sectional view of a YOZ plane in figure 1 is shown in figure 2, a top-layer circuit pattern of an HTCC substrate in figure 2 is shown in figure 3, a dielectric layer pattern on the HTCC substrate in figure 2 is shown in figure 4, a middle-layer circuit pattern of the HTCC substrate in figure 2 is shown in figure 5, a bottom-layer circuit pattern of the HTCC substrate in figure 2 is shown in figure 6, a bottom-layer circuit pattern of the HTCC substrate in figure 2 is shown in figure 7, and a top-layer circuit pattern of a PCB motherboard in figure 2 is shown in figure 8. The invention obtains the vertical interconnection structure by reasonably designing the patterns of each layer of tungsten conductor layer in the HTCC substrate, the vertical tungsten columns among the tungsten conductor layers and the vertical metal through holes among the patterns of each layer of copper conductor layer and the copper conductor layers in the PCB motherboard: a transmission substructure is formed from an SIP internal circuit to a PCB motherboard, wherein the transmission substructure comprises a first coplanar waveguide 1, a first coaxial 3, a first strip line 5, a second coaxial 7, a second strip line 9 and a second coplanar waveguide 11, the transmission substructure comprises transmission lines with 50 omega characteristic impedance, the transmission substructures are sequentially connected in series, a high-low impedance matching structure is used between the first coplanar waveguide 1 and the first coaxial 3, between the first coaxial 3 and the first strip line 5, between the first strip line 5 and the second coaxial 7, a direct-connection matching structure is used between the second coaxial 7 and the second strip line 9 for reducing the manufacturing difficulty, and a width-gradient matching structure is used between the second strip line 9 and the second coplanar waveguide 11, and the specific structure is as follows:
an ultra-wideband millimeter wave vertical interconnection structure based on HTCC comprises: the PCB comprises a HTCC substrate, a PCB motherboard grounding plane, a circuit on the top layer of the HTCC substrate, a circuit on the middle layer of the HTCC substrate, a circuit on the lower medium layer of the HTCC substrate, and a circuit on the bottom layer of the HTCC substrate, wherein the circuit on the top layer of the PCB motherboard and the PCB motherboard grounding plane are sequentially arranged from top to bottom; the transmission substructure formed by a first coplanar waveguide 1, a first coaxial 3, a first strip line 5, a second coaxial 7, a second strip line 9 and a second coplanar waveguide 11 is sequentially connected in series on the HTCC substrate and the PCB motherboard.
The cascade connection part of the first coplanar waveguide 1 and the first coaxial 3 is matched through a first high-low impedance matching substructure 2, the cascade connection part of the first coaxial 3 and the first strip line 5 is matched through a second high-low impedance matching substructure 4, the cascade connection part of the first strip line 5 and the second coaxial 7 is matched through a third high-low impedance matching substructure 6, the cascade connection part of the second coaxial 7 and the second strip line 9 is matched through a direct matching substructure 8, and the cascade connection part of the second strip line 9 and the second coplanar waveguide 11 is matched through a width gradient matching substructure 10.
The central conductor of the first coplanar waveguide 1 is positioned on the top circuit of the HTCC substrate; the outer conductor of the first coplanar waveguide 1 comprises: tungsten conductor surfaces positioned on two sides of a central conductor of the first coplanar waveguide 1 on a top layer circuit of the HTCC substrate, tungsten conductor surfaces positioned below the central conductor of the first coplanar waveguide 1 on an intermediate layer circuit of the HTCC substrate, and vertical tungsten columns positioned on two sides of the central conductor of the first coplanar waveguide 1 and connected with the two tungsten conductor surfaces on a dielectric layer on the HTCC substrate; the center conductor of the first coaxial type 3 is a vertical tungsten pillar with coordinates (0, L2+2 × L3) in a dielectric layer on the HTCC substrate; the outer conductor of the first type of coaxial 3 comprises: 4 vertical tungsten columns of +/-L3 are arranged on the dielectric layer on the HTCC substrate and are away from the central conductor of the first coaxial 3 in the Y direction; wherein L2 represents the spacing of the HTCC substrate shield vertical tungsten pillars in the Y-direction, and L3 represents the spacing of the first-type coax 3 shield vertical tungsten pillars from the first-type coax 3 center conductor in the Y-direction; a first high-low impedance matching sub-structure 2 is located on the top level circuitry of the HTCC substrate, the first high-low impedance matching sub-structure 2 connecting the first coplanar waveguide 1 and the center conductor of the first type of coax 3.
The central conductor of the first strip line 5 is located on the HTCC substrate intermediate layer circuitry; the outer conductor of the first strip line 5 includes: a tungsten conductor surface positioned above a central conductor of the first strip line 5 on the top layer circuit of the HTCC substrate, tungsten conductor surfaces positioned at two sides of the central conductor of the first strip line 5 on the middle layer circuit of the HTCC substrate, a tungsten conductor surface positioned below the central conductor of the first strip line 5 on the bottom layer circuit of the HTCC substrate, and vertical tungsten columns positioned at two sides of the central conductor of the first strip line 5 in a dielectric layer on the HTCC substrate and a dielectric layer under the HTCC substrate and connected with the three tungsten conductor surfaces; a second high-low impedance matching sub-structure 4 is located on the HTCC substrate intermediate layer circuitry, the second high-low impedance matching sub-structure 4 connecting the first type of coax 3 and the center conductor of the first strip line 5.
The central conductor of the second coaxial 7 is a vertical tungsten column with coordinates of (0, 0) in a dielectric layer under the HTCC substrate; the outer conductor of the second type of coaxial line 7 comprises: 4 vertical tungsten columns of +/-L3 are arranged on the dielectric layer under the HTCC substrate in the Y direction from the central conductor of the second coaxial 7, wherein L3 represents the distance between the shielding vertical tungsten columns of the second coaxial 7 and the central conductor of the second coaxial 7 in the Y direction; a third high-low impedance matching sub-structure 6 is located on the HTCC substrate intermediate layer circuitry, the third high-low impedance matching sub-structure 6 connecting the first strip line 5 and the center conductor of the second type of coaxial line 7.
The central conductor of the second strip line 9 is a community formed by soldering a pad on a bottom circuit of the HTCC substrate and a pad on a top circuit of the PCB motherboard; the outer conductor of the second strip line 9 includes: a tungsten conductor surface positioned above the central conductor of the second strip line 9 on the HTCC substrate top layer circuit, a tungsten conductor surface positioned at two sides of the central conductor of the second strip line 9 on the HTCC substrate bottom layer circuit and a copper conductor surface positioned at two sides of the central conductor of the second strip line 9 on the PCB motherboard top layer circuit are soldered to form a common body, a copper conductor surface positioned below the central conductor of the second strip line 9 on the PCB motherboard ground plane and the HTCC substrate; a direct matching substructure 8 is located on the HTCC substrate underlying circuitry, the direct matching substructure (8) connecting the second type of coax 7 and the center conductor of the second stripline 9.
The central conductor of the second coplanar waveguide 11 is positioned on the top circuit of the PCB motherboard; the outer conductor of the second coplanar waveguide 11 comprises: copper conductor surfaces on the top circuit of the PCB motherboard on both sides of the central conductor of the second coplanar waveguide 11, copper conductor surfaces on the ground plane of the PCB motherboard below the central conductor of the second coplanar waveguide 11, and vertical metal through holes in the PCB motherboard on both sides of the central conductor of the second coplanar waveguide 11 connecting the two copper conductor surfaces; a width-gradient matching substructure 10 is located on the top layer circuitry of the PCB motherboard, the width-gradient matching substructure 10 connecting the second stripline 9 and the central conductor of the second coplanar waveguide 11.
In the embodiment, the working frequency band of the HTCC-based ultra-wideband millimeter wave vertical interconnection structure is 2 GHz-40 GHz, the full-band insertion loss is not more than 0.36dB, and the HTCC-based ultra-wideband millimeter wave vertical interconnection structure has excellent electrical characteristics of ultrahigh working frequency, ultra-wide working frequency band, ultra-low insertion loss and the like, and is very suitable for a millimeter wave SIP with higher working frequency, wider working bandwidth and lower noise requirements; the signal path of the ultra-wideband millimeter wave vertical interconnection structure based on the HTCC is composed of 6 single transmission structures and matching circuits among the structures, parameters of the matching structures are properly changed and optimized, the signal path can be suitable for HTCC substrates with different thicknesses, different layers, different dielectric constants and other different parameters, and the derivation performance is high.
In this embodiment, as shown in table 1, table 1 is a table of dimensional parameters of a vertical interconnect structure based on HTCC.
TABLE 1
In the embodiment, the ultra-wideband millimeter wave vertical interconnection structure based on the HTCC fully considers the current mainstream HTCC process level in the design layout, all size parameters in the structure do not exceed the normal processing capacity range of the HTCC, the ultra-wideband millimeter wave vertical interconnection structure is easy to process, high in reliability and good in consistency, completely meets the universal design requirement, and is very suitable for batch production.
The above-mentioned parameters are provided only for illustrating the present invention, and the parameters of the HTCC-based ultra-wideband millimeter wave vertical interconnect structure provided by the present invention are not limited to the above description.
In this embodiment, the return loss (S11 parameter) of the vertical interconnect structure is obtained through HFSS simulation analysis by using a high frequency simulation software, as shown in fig. 9, the insertion loss (S21 parameter) of the vertical interconnect structure is shown in fig. 10, the S11 and S21 parameters of the vertical interconnect structure at 20GHz, 40GHz and 42GHz are shown in table 2, and according to the simulation results, the return loss of the vertical interconnect structure is less than-22.9 dB in the full frequency band from 2GHz to 40GHz, and the insertion loss of the vertical interconnect structure is not more than 0.36dB in the full frequency band from 2GHz to 40 GHz.
In the present embodiment, as shown in table 2, table 2 is a return loss and insertion loss parameter table.
TABLE 2
| Frequency (GHz) | Return loss S11(dB) | Transmission loss S21(dB) |
| 20 | -25.9 | -0.18 |
| 40 | -22.9 | -0.36 |
| 42 | -14.8 | -0.57 |
The vertical interconnection structure in the HTCC substrate is based on a mature HTCC process technology, realizes the ultra-wideband millimeter wave radio frequency vertical interconnection with the 2 GHz-40 GHz full-band insertion loss not more than 0.36dB, has excellent electrical characteristics of ultrahigh working frequency, ultra-wide working frequency band, ultra-low insertion loss and the like, and is easy to process, high in reliability, good in consistency, strong in derivation property and very suitable for batch production.
Example 2
As shown in fig. 2, the present invention provides a package structure, which includes the HTCC-based ultra-wideband millimeter wave vertical interconnect structure of embodiment 1, a sealing cover plate, and a metal enclosure frame, wherein the HTCC-based ultra-wideband millimeter wave vertical interconnect structure is installed in the sealing cover plate and the metal enclosure frame, and the sealing cover plate is covered in the metal enclosure frame.
In this embodiment, the packaging structure provided by the invention has the excellent electrical characteristics of ultrahigh working frequency, ultra-wide working frequency band, ultra-low insertion loss and the like due to the adoption of the HTCC-based ultra-wideband millimeter wave vertical interconnection structure of embodiment 1, and meanwhile, the interconnection structure is easy to process, high in reliability, good in consistency, strong in derivation property and very suitable for batch production.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are included in the scope of the present invention.
Claims (3)
1. The utility model provides a perpendicular interconnect structure of ultra wide band millimeter wave based on HTCC which characterized in that includes: the PCB motherboard comprises an HTCC substrate, a PCB motherboard grounding plane, an HTCC substrate top layer circuit, an HTCC substrate upper medium layer circuit, an HTCC substrate middle layer circuit, an HTCC substrate lower medium layer and an HTCC substrate bottom layer circuit, which are sequentially arranged from top to bottom, and the PCB motherboard, which is sequentially provided with a PCB motherboard top layer circuit and a PCB motherboard grounding plane from top to bottom;
the HTCC substrate and the PCB mother board are sequentially connected in series with a transmission substructure formed by a first coplanar waveguide (1), a first coaxial (3), a first strip line (5), a second coaxial (7), a second strip line (9) and a second coplanar waveguide (11);
the cascade connection part of the first coplanar waveguide (1) and the first coaxial line (3) is matched through a first high-low impedance matching substructure (2), the cascade connection part of the first coaxial line (3) and the first strip line (5) is matched through a second high-low impedance matching substructure (4), the cascade connection part of the first strip line (5) and the second coaxial line (7) is matched through a third high-low impedance matching substructure (6), the cascade connection part of the second coaxial line (7) and the second strip line (9) is matched through a direct matching substructure (8), and the cascade connection part of the second strip line (9) and the second coplanar waveguide (11) is matched through a width gradient matching substructure (10);
the central conductor of the first coplanar waveguide (1) is positioned on the top layer circuit of the HTCC substrate; the outer conductor of the first coplanar waveguide (1) comprises: the vertical tungsten columns are arranged on the top layer circuit of the HTCC substrate, positioned on the tungsten conductor surfaces on two sides of the central conductor of the first coplanar waveguide (1), on the middle layer circuit of the HTCC substrate, positioned below the central conductor of the first coplanar waveguide (1), and positioned on the dielectric layer on the HTCC substrate, positioned on two sides of the central conductor of the first coplanar waveguide (1) and connected with the tungsten conductor surfaces on two sides of the central conductor of the first coplanar waveguide (1) and positioned below the central conductor of the first coplanar waveguide (1);
the central conductor of the first coaxial type (3) is a vertical tungsten column with coordinates (0, L2+ 2L 3) in a dielectric layer on the HTCC substrate; the outer conductor of the first type of coaxial cable (3) comprises: 4 vertical tungsten columns of +/-L3 are arranged on the dielectric layer on the HTCC substrate and away from the central conductor of the first coaxial line (3) in the Y direction; wherein L2 represents the spacing of the HTCC substrate shield vertical tungsten pillars in the Y-direction, and L3 represents the spacing of the first-type coax (3) shield vertical tungsten pillars from the first-type coax (3) center conductor in the Y-direction;
the first high-low impedance matching substructure (2) is located on the top level circuitry of the HTCC substrate, the first high-low impedance matching substructure (2) connecting the first coplanar waveguide (1) and the center conductor of the first type of coax (3);
the central conductor of the first strip line (5) is positioned on the HTCC substrate middle layer circuit; the outer conductor of the first strip line (5) comprises: the vertical tungsten columns comprise tungsten conductor surfaces positioned above a central conductor of a first strip line (5) on a top layer circuit of the HTCC substrate, tungsten conductor surfaces positioned on two sides of the central conductor of the first strip line (5) on an intermediate layer circuit of the HTCC substrate, tungsten conductor surfaces positioned below the central conductor of the first strip line (5) on a bottom layer circuit of the HTCC substrate, tungsten conductor surfaces positioned on two sides of the central conductor of the first strip line (5) in a dielectric layer on the HTCC substrate and a dielectric layer below the central conductor of the HTCC substrate and connected with the tungsten conductor surfaces positioned above the central conductor of the first strip line (5), tungsten conductor surfaces positioned on two sides of the central conductor of the first strip line (5) and tungsten conductor surfaces positioned below the central conductor of the first strip line (5);
the second high-low impedance matching sub-structure (4) is located on the HTCC substrate intermediate layer circuit, the second high-low impedance matching sub-structure (4) connects the first type of coaxial line (3) and the central conductor of the first strip line (5);
the central conductor of the second coaxial line (7) is a vertical tungsten column with coordinates of (0, 0) in a dielectric layer under the HTCC substrate; the outer conductor of the second type of coaxial (7) comprises: 4 vertical tungsten columns of +/-L3 are arranged on the dielectric layer under the HTCC substrate in the Y direction from the central conductor of the second coaxial (7), wherein L3 represents the distance between the shielding vertical tungsten columns of the second coaxial (7) and the central conductor of the second coaxial (7) in the Y direction;
the third high-low impedance matching substructure (6) is located on the HTCC substrate intermediate layer circuitry, the third high-low impedance matching substructure (6) connecting the first strip line (5) and the center conductor of the second type of coax (7).
2. The HTCC-based ultra-wideband millimeter wave vertical interconnect structure according to claim 1, wherein the central conductor of the second strip line (9) is a common body formed by soldering a pad on the bottom circuit of the HTCC substrate and a pad on the top circuit of the PCB motherboard; the outer conductor of the second strip line (9) comprises: a tungsten conductor surface positioned above the central conductor of the second strip line (9) on the HTCC substrate top layer circuit, a common body formed by soldering tungsten conductor surfaces positioned at two sides of the central conductor of the second strip line (9) on the HTCC substrate bottom layer circuit and copper conductor surfaces positioned at two sides of the central conductor of the second strip line (9) on the PCB motherboard top layer circuit, a copper conductor surface positioned below the central conductor of the second strip line (9) on the PCB motherboard ground plane and the HTCC substrate;
the direct matching substructure (8) is located on the HTCC substrate underlying circuitry, the direct matching substructure (8) connecting the second type of coaxial line (7) and the center conductor of the second stripline (9).
3. The HTCC based ultra wide band millimeter wave vertical interconnect structure of claim 2, characterized in that the center conductor of the second coplanar waveguide (11) is located on the PCB motherboard top level circuitry; the outer conductor of the second coplanar waveguide (11) comprises: copper conductor surfaces on the top circuit of the PCB motherboard on two sides of the central conductor of the second coplanar waveguide (11), copper conductor surfaces on the ground plane of the PCB motherboard below the central conductor of the second coplanar waveguide (11), and vertical metal through holes in the PCB motherboard on two sides of the central conductor of the second coplanar waveguide (11) connecting the two copper conductor surfaces;
the width gradually-changing matching substructure (10) is positioned on a top layer circuit of the PCB motherboard, and the width gradually-changing matching substructure (10) is connected with a second strip line (9) and a central conductor of a second coplanar waveguide (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111233025.2A CN114006139B (en) | 2021-10-22 | 2021-10-22 | HTCC-based ultra-wideband millimeter wave vertical interconnection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111233025.2A CN114006139B (en) | 2021-10-22 | 2021-10-22 | HTCC-based ultra-wideband millimeter wave vertical interconnection structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114006139A CN114006139A (en) | 2022-02-01 |
| CN114006139B true CN114006139B (en) | 2022-08-05 |
Family
ID=79923853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111233025.2A Active CN114006139B (en) | 2021-10-22 | 2021-10-22 | HTCC-based ultra-wideband millimeter wave vertical interconnection structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114006139B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116722335B (en) * | 2023-08-09 | 2023-10-27 | 成都华兴大地科技有限公司 | Vertical transition structure and application |
| CN118016638B (en) * | 2024-04-10 | 2024-07-12 | 成都天成电科科技有限公司 | Low-loss broadband transition structure suitable for wafer level packaging |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6800815B1 (en) * | 2001-01-16 | 2004-10-05 | National Semiconductor Corporation | Materials and structure for a high reliability bga connection between LTCC and PB boards |
| US7030712B2 (en) * | 2004-03-01 | 2006-04-18 | Belair Networks Inc. | Radio frequency (RF) circuit board topology |
| TWI360912B (en) * | 2008-04-25 | 2012-03-21 | Univ Nat Chiao Tung | Vertical transition structure |
| JP5762452B2 (en) * | 2013-02-05 | 2015-08-12 | サイビーム インコーポレイテッド | Surface mountable integrated circuit packaging mechanism |
| CN106028641B (en) * | 2016-06-15 | 2019-01-08 | 中国电子科技集团公司第二十九研究所 | Vertical interconnection structure and method between LTCC and PCB based on high-frequency transmission |
| CN113161699A (en) * | 2021-03-23 | 2021-07-23 | 中国科学院空天信息创新研究院 | Circuit conversion structure |
| CN113079623B (en) * | 2021-03-29 | 2022-07-29 | 电子科技大学 | W-band millimeter wave chip multilayer dielectric substrate |
-
2021
- 2021-10-22 CN CN202111233025.2A patent/CN114006139B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN114006139A (en) | 2022-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9812750B2 (en) | High frequency band pass filter with coupled surface mount transition | |
| CN114006139B (en) | HTCC-based ultra-wideband millimeter wave vertical interconnection structure | |
| US10103054B2 (en) | Coupled vias for channel cross-talk reduction | |
| CN108063302B (en) | Vertical interconnection structure of radio frequency substrate | |
| US8330048B2 (en) | Electromagnetic bandgap structure and printed circuit board having the same | |
| US6803252B2 (en) | Single and multiple layer packaging of high-speed/high-density ICs | |
| TW202109965A (en) | Transition structure and multilayer transition structure for millimeter wave | |
| KR101702717B1 (en) | System and method for a millimeter wave circuit board | |
| US7613009B2 (en) | Electrical transition for an RF component | |
| CN113079623B (en) | W-band millimeter wave chip multilayer dielectric substrate | |
| KR101018796B1 (en) | Electromagnetic bandgap structure and circuit board | |
| US11716812B2 (en) | Millimeter-wave active antenna unit, and interconnection structure between PCB boards | |
| US20030095014A1 (en) | Connection package for high-speed integrated circuit | |
| KR101018785B1 (en) | Electromagnetic bandgap structure and circuit board | |
| CN208173765U (en) | Substrate integration wave-guide transmission structure, antenna structure | |
| US7352260B2 (en) | Transceiver using low temperature co-fired ceramic method | |
| US8399777B2 (en) | Electromagnetic bandgap structure and printed circuit board having the same | |
| US20110084406A1 (en) | Device and interconnect in flip chip architecture | |
| US8385084B2 (en) | Shielding structures for signal paths in electronic devices | |
| Namaki et al. | A tunable macro-modeling method for signal transition in mm-wave flip-chip technology | |
| CN218939976U (en) | Vertical interconnection mechanism based on strip line structure | |
| KR102582702B1 (en) | Ultra-wideband chip interconnect structure to provide the ground | |
| CN221552137U (en) | Ka wave band ultra-wideband microstrip line-gold wire transition structure | |
| CN114242665B (en) | Differential transmission structure based on BGA solder balls | |
| US9537197B2 (en) | Transmission line implementation in wafer-level packaging |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |