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CN103993269A - Coating device and coating method - Google Patents

Coating device and coating method Download PDF

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Publication number
CN103993269A
CN103993269A CN201410211636.0A CN201410211636A CN103993269A CN 103993269 A CN103993269 A CN 103993269A CN 201410211636 A CN201410211636 A CN 201410211636A CN 103993269 A CN103993269 A CN 103993269A
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Prior art keywords
vapor deposition
perforate
deposition source
shield
film coating
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CN201410211636.0A
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CN103993269B (en
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邹忠哲
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EverDisplay Optronics Shanghai Co Ltd
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EverDisplay Optronics Shanghai Co Ltd
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Abstract

The invention provides a coating device and a coating method for co-evaporating a treated substrate. The coating device comprises a first evaporation source, a second evaporation source and a first perforated shielding plate, wherein the first evaporation source is arranged below the treated substrate; the second evaporation source is arranged below the treated substrate; the first perforated shielding plate is arranged between the first evaporation source and the treated substrate and comprises a plurality of perforated areas with different perforation density, and the perforated areas with different perforation density can be aligned with the first evaporation source by virtue of rotating. By adopting the coating device and the coating method disclosed by the invention, the proportion of different evaporation materials can be conveniently adjusted in the evaporation process without affecting the coating quality, and the cost is relatively low, so that the coating device and the coating method is suitable for industrial production.

Description

Film coating apparatus and film coating method
Technical field
The present invention relates to a kind of film coating apparatus, particularly a kind of film coating apparatus and film coating method that carries out common evaporation to processed substrate.
Background technology
As everyone knows, coating process is extremely wide in the application of industry member, and general normal use is in metal-processing industry, semi-conductor industry and opto-electronics etc.In recent years, due to the developing rapidly of semi-conductor industry and opto-electronics, made coating technique have again great progress again.Vacuum plating has three kinds of forms, i.e. evaporation coating, sputter coating and ion plating.
Evaporation coating is referred to as evaporation, conventionally by thin-film material by solid-state gaseous state or the ionic state of being converted into, the material of gaseous state or ionic state passes through space by evaporation source, arrives at basic surface, material arrives at after substrate surface, and deposition is formed to film gradually.Conventionally, in order to make highly purified film, the technique of plated film must complete under high vacuum environment, and common practices is that substrate is cleaned with supersonic cleaner, and after cleaning, the upper fixture of row, sends into film coating apparatus, heats and vacuumizes; Reach after high vacuum, start plated film, when plated film, adopt the electronics bombardment of resistive heating evaporation or electron beam gun, thin-film material is become to gaseous state or ionic state, the plated film time is different and have length depending on the number of plies and degree, after plated film, after substrate is cooling, takes out.
But the film coating apparatus of conventional art, plate two kinds of different materials on same substrate time, particularly needs " immediately " to adjust the ratio of bi-material or even form the rete of concentration gradient simultaneously, there is certain difficulty.As shown in Figure 1, film coating apparatus comprises the first vapor deposition source 101, the second vapor deposition source 102, be arranged at the below of processed substrate 200 simultaneously, in the first vapor deposition source 101 and the second vapor deposition source 102, load different materials, carry out evaporation simultaneously, if want to adjust the ratio of two kinds of deposition materials in the meantime, conventionally only has the temperature that reduces or raise the first vapor deposition source 101 or the second vapor deposition source 102, but this heating and cooling process is slow, not only waste time and energy, and can affect coating quality, be unsuitable for industrial production application.
Summary of the invention
For the existing defect that evaporation coating device exists altogether, contriver is through long-term further investigation, in evaporation coating device, perforate shield is set altogether existing, vapor deposition source is partly stopped by perforate shield to the deposition material of processed substrate transmission, thereby adjust easily the ratio of different deposition materials.
On the one hand, the invention provides a kind of film coating apparatus that carries out common evaporation to processed substrate, comprising:
The first vapor deposition source, is arranged at the below of described processed substrate;
The second vapor deposition source, is arranged at the below of described processed substrate; And
The first perforate shield, is arranged between described the first vapor deposition source and described processed substrate, and described the first perforate shield comprises the different opening area of multiple perforate density, can be by rotation, so that the different opening area of perforate density is aimed at described the first vapor deposition source.
In an embodiment of film coating apparatus of the present invention, described film coating apparatus also comprises the second perforate shield, be arranged between described the second vapor deposition source and described processed substrate, described the second perforate shield comprises the different opening area of multiple perforate density, can be by rotation, so that the different opening area of perforate density is aimed at described the second vapor deposition source.
On the other hand, the present invention also provides a kind of method of utilizing above-mentioned film coating apparatus to carry out plated film, comprises the following steps:
Two kinds of different materials are loaded into respectively in described the first vapor deposition source and described the second vapor deposition source;
Adjust described the first perforate shield, make the different opening area of arbitrary perforate density on described the first perforate shield aim at described the first vapor deposition source; And
By described the first vapor deposition source and described the second vapor deposition source, described material is plated on to the surface of described processed substrate.
In an embodiment of method of the present invention, further comprising the steps of: to rotate described the first perforate shield, so that the different opening area of described perforate density is aimed at described the first vapor deposition source.
On the one hand, the present invention also provides a kind of film coating method again, and it utilizes the surperficial evaporation the first filming material of the first vapor deposition source to processed substrate, utilizes surperficial evaporation second Coating Materials of the second vapor deposition source to processed substrate, it is characterized in that:
During evaporation, utilize a shield with perforate to hide described the first vapor deposition source.
In an embodiment of film coating method of the present invention, described in there is perforate shield comprise the different opening area of multiple perforate density.
In another embodiment of film coating method of the present invention, there is the shield of perforate described in adjustment, the different opening area of arbitrary perforate density having described in making on the shield of perforate is aimed at described the first vapor deposition source.
In another embodiment of film coating method of the present invention, further comprising the steps of: described in rotation, to there is the shield of perforate, so that the different opening area of described perforate density is aimed at described the first vapor deposition source.
In another embodiment of film coating method of the present invention, further comprising the steps of: during evaporation, to utilize another shield with perforate to hide described the second vapor deposition source.
In another embodiment of film coating method of the present invention, further comprising the steps of: to utilize surperficial evaporation three Coating Materials of the 3rd vapor deposition source to processed substrate.
Film coating apparatus of the present invention and film coating method can be adjusted easily the ratio of different deposition materials in the process of evaporation, can not affect coating quality, and cost are lower, are applicable to industrial production application.
Brief description of the drawings
Fig. 1 is the prior art structural representation of evaporation coating device altogether;
Fig. 2 is the schematic diagram of gradual altogether evaporation coating device of the present invention while carrying out low concentration doping;
Fig. 3 is the schematic diagram of gradual altogether evaporation coating device of the present invention while carrying out high-concentration dopant.
Wherein, description of reference numerals is as follows:
101 first vapor deposition source
102 second vapor deposition source
200 processed substrates
300 perforate shields
Embodiment
According to specific embodiment, technical scheme of the present invention is described further below.Protection scope of the present invention is not limited to following examples, enumerates these examples and does not only limit the present invention in any way for exemplary purpose.
Fig. 2 and Fig. 3 show an embodiment of film coating apparatus of the present invention, and as shown in Figures 2 and 3, film coating apparatus comprises the first vapor deposition source 101, is arranged at the below of processed substrate 200; The second vapor deposition source 102, is arranged at the below 200 of processed substrate; And first perforate shield 300, the first perforate shields 300 be arranged between the first vapor deposition source 101 and processed substrate 200.
Film coating apparatus of the present invention is installed in coating chamber conventionally, and when operation keeps vacuum environment.
The first vapor deposition source 101 and the second vapor deposition source 102 are loaded respectively different materials in the time of common evaporation, are usually located at the appropriate location of processed substrate 200 belows, and it can be the vapor deposition source being placed in high-temperature crucibles, also can be the vapor deposition source of utilizing electron beam heating.The order not requirement of the present invention to the first vapor deposition source 101 and the second vapor deposition source 102, can adjust according to actual needs.
The first perforate shield 300 comprises the different opening area of multiple perforate density, and each opening area can distribute clockwise or counterclockwise by perforate density height, with handled easily.As shown in Figures 2 and 3, the first perforate shield 300 comprises 4 opening areas that perforate density is different.
Opening area on the first perforate shield 300 plays the effect that part stops the deposition material of gaseous state, can realize the control to evaporation ratio by reasonably adjusting perforate density.
The first perforate shield 300 can be circle or rectangle, and each opening area on it can cover the first vapor deposition source 101.
The first perforate shield 300 is set to rotatable form, so that the different opening area of perforate density is aimed at the first vapor deposition source 101, material in the first vapor deposition source 101 is partly plated on processed substrate 200, thereby adjusts easily the evaporation doping ratio of bi-material in a vapor deposition source 101 and the second vapor deposition source 102.
Thus, in coating process, can, by rotation the first perforate shield 300, make each opening area aim at successively the first vapor deposition source 101, can realize the gradual doping of concentration.Now do not need the temperature of vapor deposition source to regulate, save a large amount of time, and easy and simple to handle.
For making the first perforate shield 300 rotatable, can open holes be set at the first perforate shield 300 center, in the bottom surface of coating chamber, one pillar stiffener is set, this pillar stiffener and above-mentioned open holes match to merge to seal and extend to outside coating chamber, can manually control also and can realize automatically and controlling by a motor, thereby can outside coating chamber, reconcile the first perforate shield 300 and make position rotating, but be not limited to this.
In addition, film coating apparatus of the present invention also can comprise one second perforate shield, and it is arranged between the second vapor deposition source 102 and processed substrate 200, thereby the evaporation amount of the first vapor deposition source 101 and the second vapor deposition source 102 is adjusted simultaneously.
Second shape of perforate shield and the setting of upper opening area thereof are identical with the first perforate shield, do not repeat them here.
The present invention also provides a kind of method of utilizing above-mentioned film coating apparatus to carry out plated film, comprises the following steps:
Two kinds of different materials are loaded into respectively in the first vapor deposition source 101 and the second vapor deposition source 102;
Adjust the first perforate shield 300, make the arbitrary opening area on the first perforate shield 300 aim at the first vapor deposition source 101; And
By the first vapor deposition source 101 and the second vapor deposition source 102, described material is plated on to the surface of processed substrate 200.
In the method for the invention, further comprising the steps of: rotation the first perforate shield 300, so that the different opening area of arbitrary perforate density is aimed at the first vapor deposition source 101, the perforate density of the opening area of aiming at the first vapor deposition source 101 by conversion, can reach the gradual doping of concentration for example from high to low or from low to high.
If the second perforate shield is set, according to different plated film requirements, can selects to rotate the first perforate shield and the second perforate shield simultaneously, or rotate one of them.
The present invention also provides a kind of film coating method, and it comprises the following steps:
Utilize the surperficial evaporation the first filming material of the first vapor deposition source to processed substrate; Utilize surperficial evaporation second Coating Materials of the second vapor deposition source to processed substrate; And
During evaporation, utilize a shield with perforate to hide described the first vapor deposition source.
Wherein the first filming material is different with the second Coating Materials material, therefore can realize the common evaporation of two kinds of differing materials.
The above-mentioned shield with perforate can comprise the different opening area of multiple perforate density, and each opening area can distribute clockwise or counterclockwise by perforate density height, with handled easily.
In coating process, capable of regulating has the shield of perforate, the different opening area of arbitrary perforate density that makes to have on the shield of perforate is aimed at described the first vapor deposition source, material in the first vapor deposition source is partly plated on processed substrate, thereby adjusts easily the evaporation doping ratio of bi-material in a vapor deposition source and the second vapor deposition source.
In coating process, the also rotatable shield with perforate, so that the different opening area of perforate density is aimed at the first vapor deposition source, the perforate density of the opening area of aiming at the first vapor deposition source by conversion, can reach the gradual doping of concentration for example from high to low or from low to high.
In coating process, also can utilize another shield with perforate to hide the second vapor deposition source, thereby adjust the evaporation amount of the first filming material and the second Coating Materials simultaneously.Also can utilize a shield with perforate to hide the first vapor deposition source and the second vapor deposition source simultaneously.
Film coating method of the present invention is not limited to two vapor deposition source and two and has the shield of perforate, it can carry out common evaporation and the ratio adjustment of multiple vapor deposition source simultaneously, for example, in carrying out above-mentioned plated film, can utilize surperficial evaporation three Coating Materials of the 3rd vapor deposition source to processed substrate.
By above film coating method, the ratio adjustment can realize easily two or more materials and carry out common evaporation time.
In sum, film coating apparatus of the present invention and film coating method can be adjusted easily the ratio of different deposition materials in the process of evaporation, simplify the operation, and reduce coating cost, can not affect coating quality simultaneously, are applicable to industrial production application.
Those skilled in the art it should be noted in the discussion above that embodiment described in the invention is only exemplary, can make within the scope of the invention various other replacements, changes and improvements.Thereby, the invention is not restricted to above-mentioned embodiment, and be only defined by the claims.

Claims (10)

1. a film coating apparatus that carries out common evaporation to processed substrate, comprising:
The first vapor deposition source, is arranged at the below of described processed substrate;
The second vapor deposition source, is arranged at the below of described processed substrate; And
The first perforate shield, is arranged between described the first vapor deposition source and described processed substrate, and described the first perforate shield comprises the different opening area of multiple perforate density, can be by rotation, so that the different opening area of perforate density is aimed at described the first vapor deposition source.
2. according to the film coating apparatus of claim 1, wherein said film coating apparatus also comprises the second perforate shield, be arranged between described the second vapor deposition source and described processed substrate, described the second perforate shield comprises the different opening area of multiple perforate density, can be by rotation, so that the different opening area of perforate density is aimed at described the second vapor deposition source.
3. a method for plated film is carried out in utilization according to the film coating apparatus of claim 1 or 2, comprises the following steps:
Two kinds of different materials are loaded into respectively in described the first vapor deposition source and described the second vapor deposition source;
Adjust described the first perforate shield, make the different opening area of arbitrary perforate density on described the first perforate shield aim at described the first vapor deposition source; And
By described the first vapor deposition source and described the second vapor deposition source, described material is plated on to the surface of described processed substrate.
4. according to the method for claim 3, further comprising the steps of: to rotate described the first perforate shield, so that the different opening area of described perforate density is aimed at described the first vapor deposition source.
5. a film coating method, it utilizes the surperficial evaporation the first filming material of the first vapor deposition source to processed substrate, utilizes surperficial evaporation second Coating Materials of the second vapor deposition source to processed substrate, it is characterized in that:
During evaporation, utilize a shield with perforate to hide described the first vapor deposition source.
6. according to the film coating method of claim 5, the wherein said shield with perforate comprises the different opening area of multiple perforate density.
7. according to the film coating method of claim 6, described in wherein adjusting, there is the shield of perforate, the different opening area of arbitrary perforate density having described in making on the shield of perforate is aimed at described the first vapor deposition source.
8. according to the film coating method of claim 7, further comprising the steps of: described in rotation, to there is the shield of perforate, so that the different opening area of described perforate density is aimed at described the first vapor deposition source.
9. according to the film coating method of claim 5, further comprising the steps of: during evaporation, to utilize another shield with perforate to hide described the second vapor deposition source.
10. according to the film coating method of any one in 5 to 9 in claim, further comprising the steps of: to utilize surperficial evaporation the 3rd Coating Materials of the 3rd vapor deposition source to processed substrate.
CN201410211636.0A 2014-05-19 2014-05-19 Coating apparatus and film plating process Active CN103993269B (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104617223A (en) * 2015-02-03 2015-05-13 京东方科技集团股份有限公司 Organic light-emitting diode device, manufacturing method thereof and evaporation facility
CN106929804A (en) * 2017-04-26 2017-07-07 昆山国显光电有限公司 Vapor deposition source and evaporated device
CN107385406A (en) * 2017-05-22 2017-11-24 茆胜 Coating system and its film thickness monitoring device and film plating process and its film thickness monitoring method
CN108179384A (en) * 2017-12-25 2018-06-19 浙江工业大学 A kind of preparation method of surface graded film
CN109536914A (en) * 2019-01-10 2019-03-29 合肥百思新材料研究院有限公司 A kind of the vapor deposition film thickness set composite and its working method of detection molecules evaporation capacity
CN111676454A (en) * 2020-08-04 2020-09-18 光驰科技(上海)有限公司 Evaporation source configuration structure capable of saving space in vacuum coating chamber and design method thereof
CN113174565A (en) * 2021-04-26 2021-07-27 睿馨(珠海)投资发展有限公司 Baffle plate, evaporation equipment and preparation method for manufacturing high-gradient film layer

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JPS5239584A (en) * 1975-09-25 1977-03-26 Hitachi Ltd Vacuum evaporation apparatus
CN103540898A (en) * 2013-10-30 2014-01-29 京东方科技集团股份有限公司 Vacuum evaporation device
CN103572215A (en) * 2012-07-31 2014-02-12 三星显示有限公司 Depositing apparatus and method for measuring deposition quantity using the same
TWM474748U (en) * 2013-12-12 2014-03-21 Ching-Feng Chen Multi-source vapor deposition device

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JPS5239584A (en) * 1975-09-25 1977-03-26 Hitachi Ltd Vacuum evaporation apparatus
CN103572215A (en) * 2012-07-31 2014-02-12 三星显示有限公司 Depositing apparatus and method for measuring deposition quantity using the same
CN103540898A (en) * 2013-10-30 2014-01-29 京东方科技集团股份有限公司 Vacuum evaporation device
TWM474748U (en) * 2013-12-12 2014-03-21 Ching-Feng Chen Multi-source vapor deposition device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104617223A (en) * 2015-02-03 2015-05-13 京东方科技集团股份有限公司 Organic light-emitting diode device, manufacturing method thereof and evaporation facility
CN104617223B (en) * 2015-02-03 2017-12-08 京东方科技集团股份有限公司 Organic light emitting diode device and preparation method thereof and evaporated device
US10707418B2 (en) 2015-02-03 2020-07-07 Boe Technology Group Co., Ltd. Organic light-emitting diode device, manufacturing method thereof and evaporation equipment
CN106929804A (en) * 2017-04-26 2017-07-07 昆山国显光电有限公司 Vapor deposition source and evaporated device
CN107385406A (en) * 2017-05-22 2017-11-24 茆胜 Coating system and its film thickness monitoring device and film plating process and its film thickness monitoring method
CN108179384A (en) * 2017-12-25 2018-06-19 浙江工业大学 A kind of preparation method of surface graded film
CN108179384B (en) * 2017-12-25 2020-08-18 浙江工业大学 Preparation method of surface gradient film
CN109536914A (en) * 2019-01-10 2019-03-29 合肥百思新材料研究院有限公司 A kind of the vapor deposition film thickness set composite and its working method of detection molecules evaporation capacity
CN111676454A (en) * 2020-08-04 2020-09-18 光驰科技(上海)有限公司 Evaporation source configuration structure capable of saving space in vacuum coating chamber and design method thereof
CN111676454B (en) * 2020-08-04 2023-09-05 光驰科技(上海)有限公司 Evaporation source configuration structure capable of saving indoor space of vacuum coating and design method thereof
CN113174565A (en) * 2021-04-26 2021-07-27 睿馨(珠海)投资发展有限公司 Baffle plate, evaporation equipment and preparation method for manufacturing high-gradient film layer

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Address after: 201506, No. nine, No. 1568, Jinshan Industrial Zone, Shanghai, Jinshan District

Patentee after: Shanghai Hehui optoelectronic Co., Ltd

Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District

Patentee before: EverDisplay Optronics (Shanghai) Ltd.